| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438747000 | With relative movement between substrate and confined pool of etchant | 13 |
| 20100062611 | Method and Apparatus for Thinning a Substrate - Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH. | 03-11-2010 |
| 20110045673 | METHOD FOR MANUFACTURING A SILICON SURFACE WITH PYRAMIDAL TEXTURE - The invention relates to a method for manufacturing a silicon surface with a pyramidal structure, in which a silicon wafer containing the silicon surface is dipped into an etching solution. To produce a pyramidal structure that is as homogeneous as possible, according to the invention it is proposed that the silicon surface be treated with ozone prior to coming into contact with the etching solution. | 02-24-2011 |
| 20110183524 | METHOD FOR CHEMICALLY TREATING A SUBSTRATE - A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics. | 07-28-2011 |
| 20110195579 | SCRIBE-LINE DRAINING DURING WET-BENCH ETCH AND CLEAN PROCESSES - Controlling scribe line orientation during wet-bench processes has been found to improve yield and reduce particles from inadequate draining when the scribe lines are oriented about 45 degrees from horizontal. A wafer is provided to the wet bench apparatus and immersed in a solution. When removed from the solution, the wafer should be oriented vertically with scribe lines oriented about 45 degrees, plus or minus 15 degrees from horizontal. Wafer scribe line orientation are checked and changed before the wet bench process or during the wet bench processing. | 08-11-2011 |
| 20110223771 | Wet metal-etching method and apparatus used for MEMS - The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water. | 09-15-2011 |
| 20130244442 | ULTRA HIGH-SPEED WET ETCHING APPARATUS - There is provided with an etching method using an etching apparatus. Four arms can be positioned in a direction substantially from a center of the stage toward a peripheral portion with an angle difference of about 90°. Etchant is supplied to a first position nearest to the center of the object which is rotating, from a first etchant supply nozzle placed on a first arm. Etchant is further supplied to a second position second nearest to the center of the object, from a second etchant supply nozzle placed on a second arm. The second arm is substantially symmetrically positioned with respect to the first arm and the second arm has an angle difference of about 180° with respect to the first arm. | 09-19-2013 |
| 20130260570 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In a substrate processing apparatus, with an internal space of a chamber brought into a pressurized atmosphere, an etching process is performed by continuously supplying a first processing liquid onto an upper surface of a substrate while rotating the substrate. | 10-03-2013 |
| 20140273500 | METAL LIFTOFF TOOLS AND METHODS - In certain embodiments the metal liftoff tool comprises an immersion tank for receiving a wafer cassette with wafers therein, the immersion tank including an inner weir, a lifting and lowering mechanism capable of raising and lowering the wafer cassette while submerged in fluid in the immersion tank, low pressure high velocity primary spray jets for stripping the metal, the primary spray jets positioned at opposing sides of the immersion tank parallel to the wafer surfaces planes, and secondary spray jets for pressure equalization force, positioned at the bottom of the immersion tank. A wafer lift insert is positioned at the bottom of the immersion tank to receive and periodically lift the wafers within the cassette. | 09-18-2014 |
| 20150031214 | Chemical Fluid Processing Apparatus and Chemical Fluid Processing Method - A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate. | 01-29-2015 |
| 20150357213 | SUBSTRATE ATTACHING/DETACHING UNIT FOR SUBSTRATE HOLDER, WET-TYPE SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, SUBSTRATE HOLDER CONVEYING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE CONVEYING METHOD - A substrate attaching/detaching unit includes a stocker accommodating a plurality of substrate holders | 12-10-2015 |
| 20160079097 | APPARATUS FOR PROCESSING SEMICONDUCTOR WAFERS, IN PARTICULAR FOR CARRYING OUT A POLYMERS REMOVAL PROCESS STEP - An apparatus for processing semiconductor wafers includes at least a wet bench and an automatic handling system of a wafer carrier removably connected thereto. The wet bench includes a first processing tank, a second processing tank and a third processing tank, separated from one another, each processing tank being dedicated to a different chemical, as well as a special cleaning and drying tank for processing the automatic handling system when the wafer carrier has been removed. | 03-17-2016 |
| 20160204006 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE | 07-14-2016 |
| 20170236726 | ETCHING APPARATUS AND METHOD, AND FLEXIBLE FILM ETCHED BY THE ETCHING METHOD | 08-17-2017 |
