| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438734000 | Sequential etching steps on a single layer | 14 |
| 20080268648 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Disclosed is a means for stabilizing quality of a semiconductor device by preventing projections from being formed in the bottom of a through hole. A method of manufacturing a semiconductor device includes a process of forming a through hole reaching a metal nitride layer through an interlayer insulating layer on a semiconductor wafer on which the wiring layer, the metal nitride layer formed on the wiring layer, and the interlayer insulating layer covering the wiring layer and the metal nitride layer are formed. The through hole forming process includes: a first etching step of etching the interlayer insulating layer by an anisotropic etching method with the semiconductor wafer set to a first temperature; and a second etching step of etching an upper surface of metal nitride layer by an anisotropic etching method with the semiconductor wafer set to a second temperature higher than the first temperature. | 10-30-2008 |
| 20090061639 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes stacking a spin on carbon (SOC) layer and an multifunction hard mask (MFHM) layer on a substrate, forming a photoresist pattern over the MFHM layer, first etching the MFHM layer using a first amount of a fluorine-based gas, second etching the MFHM layer using a second amount of a fluorine-based gas, wherein the second amount is less than the first amount, etching the SOC layer using the MFHM layer as an etch barrier, and etching the substrate using the SOC layer and the MFHM layer as an etch barrier. | 03-05-2009 |
| 20090061640 | Alternate gas delivery and evacuation system for plasma processing apparatuses - A gas distribution system for supplying a gas mixture to a plasma process chamber is provided. A first valve arrangement is connected to upstream ends of a first gas line and a second gas line. A second valve arrangement is connected to downstream ends of the first gas line and the second gas line. A first gas distribution outlet line is connected between a gas supply and the first valve arrangement and a first chamber inlet line connected between the second valve arrangement and the plasma process chamber. A first evacuation line is connected to the first gas line at a location between the first valve arrangement and the second valve arrangement. A second evacuation line is connected to the second gas line at a location between the first valve arrangement and the second valve arrangement. The first evacuation line and second evacuation line are in fluid communication with a vacuum line. A controller is operable to actuate the first valve arrangement and second valve arrangement to selectively flow the gas mixture from the gas supply to the plasma process chamber through the first gas line while the second gas is selectively evacuated by the vacuum line; or to selectively flow the gas mixture from the gas supply to the plasma process chamber through the second gas line while the first gas line is selectively evacuated by the vacuum line. | 03-05-2009 |
| 20090142931 | Cleaning method following opening etch - A cleaning method following an opening etching is provided. First, a semiconductor substrate having a dielectric layer is provided. The hard mask layer includes at least a metal layer. The opening etch is then carried out to form at least an opening in the dielectric layer. A nitrogen (N2) treatment process is performed to clean polymer residues having carbon-fluorine (C—F) bonds remained in the opening. Finally, a wet cleaning process is performed. | 06-04-2009 |
| 20100197143 | DRY ETCHING METHOD FOR SILICON NITRIDE FILM - A dry etching method for a silicon nitride film capable of improving throughput is provided. A dry etching method for dry-etching a silicon nitride film | 08-05-2010 |
| 20110081784 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: forming step of forming an etching mask on a second main face of a substrate, the etching mask being made of Cu or Cu alloy and having an opening, the second main face being on an opposite side of a first main face of the substrate where a nitride semiconductor layer is provided; a first etching step of applying a dry etching to the second main face of the substrate with use of the etching mask so that all of or a part of the nitride semiconductor layer is left; a removing step of removing the etching mask after the first etching step; and a second etching step of dry-etching the left nitride semiconductor layer after the removing step. | 04-07-2011 |
| 20120083131 | METHOD AND APPARATUS FOR TREATING SILICON SUBSTRATE - A method and an apparatus for treating a silicon substrate for effectively removing a silicon oxide film formed on a surface of a silicon film and improving surface uniformity of the silicon film. The method comprises providing a substrate including a silicon film; providing a first fluid, which is capable of etching a silicon oxide film, to a surface of the substrate in a first time band; providing a second fluid containing water to the surface of the substrate in a second time band, which is different from the first time band; and providing a third fluid, which is capable of etching the silicon oxide film, has different ingredients as compared to the first fluid, and has high etching ratio with respect to the silicon oxide film, to a surface of the substrate in a third time band, which is different from the first time band and the second time band. | 04-05-2012 |
| 20120196447 | UNIFORM DRY ETCH IN TWO STAGES - A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages. | 08-02-2012 |
| 20130017687 | METHOD FOR FORMING OPENINGS IN SEMICONDUCTOR DEVICEAANM Lin; Chih-ChingAACI Taoyuan CountyAACO TWAAGP Lin; Chih-Ching Taoyuan County TWAANM Chen; Yi-NanAACI Taoyuan CountyAACO TWAAGP Chen; Yi-Nan Taoyuan County TWAANM Liu; Hsien-WenAACI Taoyuan CountyAACO TWAAGP Liu; Hsien-Wen Taoyuan County TW - A method for forming an opening in a semiconductor device is provided, including: providing a semiconductor substrate with a silicon oxide layer, a polysilicon layer and a silicon nitride layer sequentially formed thereover; patterning the silicon nitride layer, forming a first opening in the silicon nitride layer, wherein the first opening exposes a top surface of the polysilicon layer; performing a first etching process, using gasous etchants including hydrogen bromide (HBr), oxygen (O | 01-17-2013 |
| 20130137276 | METHOD AND APPARATUS FOR PREVENTING NATIVE OXIDE REGROWTH - A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged. | 05-30-2013 |
| 20140094037 | Method and Apparatus for Preventing Native Oxide Regrowth - A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged. | 04-03-2014 |
| 20150064927 | SURFACE PLANARIZATION METHOD OF THIN FILM AND PREPARING METHOD OF ARRAY SUBSTRATE - A surface planarization method of thin film and a preparing method of an array substrate relate to a display field, and can solve the technical problem that the conventional dry etching severely damages the surface flatness of other film layers below the one being etched, thereby improving the display properties of the LCD. The preparing method of the array substrate comprises patterning a non-metallic layer ( | 03-05-2015 |
| 20160005621 | ETCHING METHOD, ETCHING APPARATUS AND STORAGE MEDIUM - A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base layer of the silicon oxide layer is etched is disclosed. The method includes heating the target substrate in a vacuum atmosphere and intermittently supplying, as an etching gas, at least one of a processing gas containing a hydrogen fluoride gas and an ammonia gas in a pre-mixed state and a processing gas containing a compound of nitrogen, hydrogen and fluorine to the target substrate from a gas supply unit multiple times. | 01-07-2016 |
| 20160079088 | METHOD FOR ETCHING A HARDMASK LAYER FOR AN INTERCONNECTION STRUCTURE FOR SEMICONDUCTOR APPLICATIONS - Embodiments of the present disclosure provide methods for patterning a hardmask layer disposed on a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a hardmask layer on a metal layer disposed on a substrate includes supplying a first etching gas mixture comprising a carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of a hardmask layer disposed on a metal layer formed on a substrate, supplying a second etching gas mixture comprising a hydrocarbon gas into the processing chamber to clean the substrate, and supplying a third etching gas mixture comprising a carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed. | 03-17-2016 |
