| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438681000 | Of organo-metallic precursor (i.e., MOCVD) | 31 |
| 20080248648 | DEPOSITION PRECURSORS FOR SEMICONDUCTOR APPLICATIONS - This invention relates to organometallic compounds comprising at least one metal or metalloid and at least one substituted anionic 6 electron donor ligand having sufficient substitution (i) to impart decreased carbon concentration in a film or coating produced by decomposing said compound, (ii) to impart decreased resistivity in a film or coating produced by decomposing said compound, or (iii) to impart increased crystallinity in a film or coating produced by decomposing said compound. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions. | 10-09-2008 |
| 20080299771 | METHODS OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS AND TRANSISTORS MADE THEREBY - A method of making a thin film transistor comprising a thin film semiconductor element comprised of a transparent zinc-oxide-based semiconductor material, wherein spaced apart first and second contacts in contact with said material are position on either side of a channel in the thin film semiconductor element such that the elongated sides of the channel are aligned with an underlying gate structure. The method can be accomplished while maintaining the substrate temperature at no more than 300° C. during fabrication. | 12-04-2008 |
| 20080311746 | NEW METAL PRECURSORS FOR SEMICONDUCTOR APPLICATIONS - Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes. | 12-18-2008 |
| 20090081868 | VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS - Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater. | 03-26-2009 |
| 20090111264 | PLASMA-ENHANCED CYCLIC LAYER DEPOSITION PROCESS FOR BARRIER LAYERS - In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof. | 04-30-2009 |
| 20090197410 | METHOD OF FORMING TASIN FILM - A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH | 08-06-2009 |
| 20090197411 | NEW METAL PRECURSORS CONTAINING BETA-DIKETIMINATO LIGANDS - Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one β-diketiminato ligand, and has the general formula: | 08-06-2009 |
| 20090275199 | UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME - The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided. | 11-05-2009 |
| 20100035432 | CHEMICAL VAPOR DEPOSITION METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICES - A method of and system for chemical vapor deposition of layers of material on substrates for producing thin film semiconductor devices provides for continuous in-line processing. The method and system are adapted for size and potential speed, and for scaling to further increase the rate of production. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The chemical vapor for deposition at each region covers an area that is substantial for substrates, then, also having a substantial area. The chemical vapor may include an organometallic material, such as diethyl zinc vapor, or dimethyl zinc vapor, as well as a material that provides oxygen, such as water vapor or nitrous oxide gas. It may also include a material that provides a dopant. Thus, the layers of material may be a zinc oxide material. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor. The chemical vapor deposition head includes an emission and distribution face at the region for the head, and wall structure defining a first plenum layer having a first plenum and a second plenum layer having a second plenum, for receiving chemical materials from the supply apparatus and for maintaining separation of received chemical materials. The head also includes wall structure defining a third plenum layer having a first set of elongated plenums for receiving chemical material from the first plenum and distributing such chemical material to the emission and distribution face, and a second set of elongated plenums for receiving chemical material from the second plenum and distributing such chemical material to the emission and distribution face. One exemplary number of deposition regions is seven. | 02-11-2010 |
| 20100055905 | METHOD OF FORMING AN ALUMINUM OXIDE LAYER - Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bulk aluminum oxide layer atop the seed layer using a metalorganic chemical vapor deposition (MOCVD) process having a second deposition rate greater than the first deposition rate. | 03-04-2010 |
| 20100099257 | Method for thin film vapor deposition of a dialkyl amido dihydroaluminum compound - A method for the vapor deposition of aluminum films is provided. Such method employs a dialkyl amido dihydroaluminum compound of the formula [H | 04-22-2010 |
| 20100167542 | Methods of Titanium Deposition - Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces. | 07-01-2010 |
| 20100233879 | METHOD FOR UNIFORM NANOSCALE FILM DEPOSITION - Ultrathin layers are deposited by chemical vapor deposition (CVD) with reduced discontinuities, such as pinholes. Embodiments include depositing a material on a wafer by CVD while rotating the CVD showerhead and/or the wafer mounting surface, e.g., at least 45°. Embodiments include rotating the showerhead and/or mounting surface continuously through the deposition of the material. Embodiments also include forming subfilms of the material and rotating the showerhead and/or mounting surface after the deposition of each subfilm. The rotation of the showerhead and/or mounting surface averages out the non-uniformities introduced by the CVD showerhead, thereby eliminating discontinuities and improving within wafer and wafer-to-wafer uniformity. | 09-16-2010 |
| 20100261350 | METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CHEMICAL PHASE DEPOSITION - Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C | 10-14-2010 |
| 20100273328 | METHOD FOR PRODUCING AN ORGANOMETALLIC LAYER - A method for producing an organometallic layer includes providing a substrate having at least a layer with atoms of an oxidizable metal on its surface. The surface is exposed to a fluid that includes organic molecules having at least two functional groups that contain elements of main group VI such that the atoms of the oxidizable metal form a bond with the organic molecules. By consumption of the atoms of oxidizable metal and of the organic molecules, the organometallic layer is formed on the substrate at locations on the surface of the substrate where the atoms of oxizable are disposed, the atoms of oxizable metal being incorporated into the organometallic layer. A thickness of the organometallic layer is determined by a duration of the exposing, a thickness of the layer including the atoms of the oxidizable metal, and the number of organic molecules in the fluid. | 10-28-2010 |
| 20110207324 | NEW METAL PRECURSORS FOR SEMICONDUCTOR APPLICATIONS - Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes. | 08-25-2011 |
| 20110263123 | PLACING TABLE STRUCTURE - Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition restraint gas supply means which is arranged in the placing table for the purpose of supplying decomposition restraint gas, which restraints thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table. | 10-27-2011 |
| 20110275215 | METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS - A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me | 11-10-2011 |
| 20120108062 | Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
| 20120122313 | METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS - Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate. | 05-17-2012 |
| 20130065395 | NEW METAL PRECURSORS FOR SEMICONDUCTOR APPLICATIONS - Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes. | 03-14-2013 |
| 20130095658 | METAL ORGANIC CHEMICAL VAPOR DEPOSITION METHOD AND APPARATUS - A metal organic chemical vapor deposition (MOCVD) method and apparatus are provided. The MOCVD method includes: providing a substrate, in which a metal-based material layer is disposed on a first surface of the substrate; putting the substrate on a base in a chamber, in which the metal-based material layer is between the substrate and the base; and performing a MOCVD process on a second surface opposite to the first surface. The difference in thermal conductivity between the metal-based material layer and the substrate is in the range of 1 W/m° C. to 20 W/m° C., and the thermal expansion coefficients of the metal-based material layer and the substrate are of the same order. | 04-18-2013 |
| 20140179105 | HETEROLEPTIC (ALLYL)(PYRROLES-2-ALDIMINATE) METAL-CONTAINING PRECURSORS, THEIR SYNTHESIS AND VAPOR DEPOSITION THEREOF TO DEPOSIT METAL-CONTAINING FILMS - Disclosed are metal-containing precursors having the formula Compound (I) wherein: —M is a metal selected from Ni, Co, Mn, Pd; and —each of R- | 06-26-2014 |
| 20140235054 | TUNGSTEN DIAZABUTADIENE PRECURSORS, THEIR SYNTHESIS, AND THEIR USE FOR TUNGSTEN CONTAINING FILM DEPOSITIONS - Disclosed are tungsten diazabutadiene molecules, their method of manufacture, and their use in the deposition of tungsten-containing films. The disclosed molecules have the formula W(DAD) | 08-21-2014 |
| 20140242795 | Volatile Imidazoles and Group 2 Imidazole Based Metal Precursors - Sterically hindered imidazolate ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes. | 08-28-2014 |
| 20140248772 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS - Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA). | 09-04-2014 |
| 20140342555 | DEPOSITION CHAMBERS WITH UV TREATMENT AND METHODS OF USE - Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas. | 11-20-2014 |
| 20150303063 | RUTHENIUM COMPLEX, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM - The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: | 10-22-2015 |
| 20160115588 | COBALT-CONTAINING FILM FORMING COMPOSITIONS, THEIR SYNTHESIS, AND USE IN FILM DEPOSITION - Cobalt-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The cobalt-containing film forming compositions comprise silylamide-containing precursors, particularly Co[N(SiMe | 04-28-2016 |
| 20160118262 | ENHANCED THIN FILM DEPOSITION - Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties. | 04-28-2016 |
| 20190144999 | PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS | 05-16-2019 |
