Class / Patent application number | Description | Number of patent applications / Date published |
438500000 | Fluid growth from liquid combined with subsequent diverse operation | 28 |
20100093158 | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices - A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications. | 04-15-2010 |
20130045590 | CARBON TAPE INTENDED TO RECEIVE A LAYER OF A SEMICONDUCTOR MATERIAL - A carbon ribbon ( | 02-21-2013 |
20130295752 | METHODS FOR CHEMICAL MECHANICAL PLANARIZATION OF PATTERNED WAFERS - Methods for chemical mechanical planarization of patterned wafers are provided herein. In some embodiments, methods of processing a substrate having a first surface and a plurality of recesses disposed within the first surface may include: depositing a first material into the plurality of recesses to predominantly fill the plurality of recesses with the first material; depositing a second material different from the first material into the plurality of recesses and atop the substrate to fill the plurality of recesses and to form a layer atop the first surface; and planarizing the second material using a first slurry in a chemical mechanical polishing tool until the first surface is reached. In some embodiments, a second slurry, different than the first slurry, is used to planarize the substrate to a first level. | 11-07-2013 |
20150011078 | MASK FOR FORMING SEMICONDUCTOR PATTERN, PATTERNING SYSTEM WITH THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A mask for forming a semiconductor pattern includes a first body portion provided with a first through hole for injecting a semiconductor material and a second body portion provided with a second through hole for exhausting a gas. As the result of the gas suction through the second through hole, the semiconductor material may be crystallized to form a semiconductor pattern on a base substrate. A thickness of the semiconductor pattern can be controlled by a space between the mask and the base substrate, and a crystal structure of the semiconductor pattern can be controlled by an amount of the gas to be exhausted through the second through hole. | 01-08-2015 |
20150064886 | METHODS FOR PASSIVATING A CARBONIC NANOLAYER - Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the nanotube fabric layer) is used to form a barrier layer within a nanotube fabric layer. In other embodiments, individual nanotube elements are combined with and nanoscopic particles to limit the porosity of a nanotube fabric layer. | 03-05-2015 |
438501000 | Doping of semiconductor | 4 |
20090081856 | SINGLE CRYSTAL SILICON WAFER FOR INSULATED GATE BIPOLAR TRANSISTORS AND PROCESS FOR PRODUCING THE SAME - A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film thickness of from 50 to 150 nm. The wafer has an interstitial oxygen concentration of at most 7.0×10 | 03-26-2009 |
20100136771 | SUB-CRITICAL SHEAR THINNING GROUP IV BASED NANOPARTICLE FLUID - A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles. | 06-03-2010 |
20110076841 | FORMING CATALYZED II-VI SEMICONDUCTOR NANOWIRES - A method of forming II-VI semiconductor nanowires, comprises: providing a support; depositing a layer including metal alloy nanoparticles on the support; and, heating the support and growing II-VI semiconductor nanowires where the metal alloy nanoparticles act as catalysts and selectively cause localized growth of the nanowires. | 03-31-2011 |
20130196490 | Method and Apparatus for Growing a III-Nitride Layer - A method that includes implantation of dopants while a III-nitride body is being grown on a substrate, and an apparatus for the practice of the method. | 08-01-2013 |
438502000 | Heat treatment | 19 |
20080254601 | METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES - A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed. | 10-16-2008 |
20090117719 | HIGH FREQUENCY DIODE AND METHOD FOR PRODUCING SAME - A high frequency diode comprising: a P type region, a N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×10 | 05-07-2009 |
20090233426 | METHOD OF FORMING A PASSIVATED DENSIFIED NANOPARTICLE THIN FILM ON A SUBSTRATE - A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed. | 09-17-2009 |
20090239360 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND METHOD - A sealing member | 09-24-2009 |
20100029069 | GERMANIUM FILMS BY POLYMER-ASSISTED DEPOSITION - Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration. | 02-04-2010 |
20100055884 | MANUFACTURING METHOD FOR SILICON WAFER - In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate. | 03-04-2010 |
20100216299 | SUBSTRATE PREPARATION FOR ENHANCED THIN FILM FABRICATION FROM GROUP IV SEMICONDUCTOR NANOPARTICLES - A method for producing a thin film promoter layer is disclosed. The method includes depositing a Group IV semiconductor ink on a substrate, the Group IV semiconductor ink including a set of Group IV semiconductor nanoparticles and a set of metal nanoparticles to form a porous compact. The method also includes heating the substrate to a first temperature between about 350° C. to about 765° C. and for a first time period between 5 min to about 3 hours. | 08-26-2010 |
20100267222 | High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. | 10-21-2010 |
20110143526 | METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER - A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration. | 06-16-2011 |
20120184091 | METHOD FOR HEAT TREATING A SILICON WAFER - The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T | 07-19-2012 |
20120309179 | SUBSTRATE TREATING APPARATUS AND METHOD OF TREATING SUBSTRATE - A substrate treating apparatus including: a first chamber having a coating part which forms a coating film of a liquid material containing an oxidizable metal and a solvent on a substrate; a second chamber having a first heating part which heats the coating film; and a connection part which connects the first chamber and the second chamber, wherein the connection part is provided with a second heating part which heats the coating film coated on the substrate and a pressure control part which controls the pressure around the coating film. | 12-06-2012 |
20130005124 | METHOD FOR MANUFACTURING A METAL OXIDE SEMICONDUCTOR - One aspect in the present disclosure relates to a method for manufacturing an amorphous metal oxide semiconductor. In an exemplary embodiment, a film is deposited on a substrate from a mixed solution as a starting element. For example, the mixed solution includes at least an indium alkoxide and a zinc alkoxide in a solvent. The film made from the mixed solution on the substrate is cured by thermal-annealing in a water vapor atmosphere, at a temperature range of, for example, 210 to 275 degrees Celsius, inclusive. | 01-03-2013 |
20130252407 | SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS - Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae Si | 09-26-2013 |
20140051237 | Semiconductor Ink Composition - A representative printable composition comprises a liquid or gel suspension of a plurality of substantially spherical semiconductor particles; and a first solvent comprising a polyol or mixtures thereof, such as glycerin; and a second solvent different from the first solvent, the second solvent comprising a carboxylic or dicarboxylic acid or mixtures thereof, such as glutaric acid. The composition may further comprise a third solvent such as tetramethylurea, butanol, or isopropanol. In various embodiments, the plurality of substantially spherical semiconductor particles have a size in any dimension between about 5 nm and about 100μ. A representative composition can be printed and utilized to produce diodes, such as photovoltaic diodes or light emitting diodes. | 02-20-2014 |
20140170841 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention provides a silicon carbide semiconductor device having an ohmic electrode improved in adhesion of a wire thereto by preventing deposition of carbon so as not to form a Schottky contact, as well as a method for manufacturing such a silicon carbide semiconductor device. In the SiC semiconductor device, upon forming the ohmic electrode, a first metal layer made of one first metallic element is formed on one main surface of a SiC layer. Further, a Si layer made of Si is formed on an opposite surface of the first metal layer to its surface facing the SiC layer. The stacked structure thus formed is subjected to thermal treatment. In this way, there can be obtained a silicon carbide semiconductor device having an ohmic electrode adhered well to a wire by preventing deposition of carbon atoms on the surface layer of the electrode and formation of a Schottky contact resulting from Si and SiC. | 06-19-2014 |
20140287572 | MANUFACTURING METHOD OF MIS-TYPE SEMICONDUCTOR DEVICE - A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of; forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer. | 09-25-2014 |
20140370694 | Process For The Manufacture Of A Semiconductor Device - A method for the manufacture of at least part of a thin-film device including forming one or more indentations in a substrate, preferably a plastic substrate, an indentation having sidewalls and a base; filling at least one of the one or more indentations with a first ink, the first ink having a first material precursor, preferably a first metal-, semiconductor-, or a metal-oxide precursor; and, annealing at least a portion of the first ink such that a surface of the base inside the indentation is dewetted and a narrowed first structure of the first material inside of the indentation is formed. | 12-18-2014 |
20150325438 | PRECURSOR SOLUTION FOR FORMING METAL CHALCOGENIDE FILM - A chalcogen element can be effectively dissolved in a non-explosive hydrazine-based solvent by the aid of sodium in a non-explosive hydrazine-based solvent. Therefore, a precursor solution for forming a metal chalcogenide film containing as a solvent a non-explosive hydrazine-based solvent which is less poisonous than hydrazine and which is free of explosiveness is provided. A metal chacogenide thin film may be formed employing the metal chalcogenide precursor solution. | 11-12-2015 |
20160111283 | METHOD FOR DISSOLVING CHALCOGEN ELEMENTS AND METAL CHALCOGENIDES IN NON-HAZARDOUS SOLVENTS - The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate. | 04-21-2016 |