| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438497000 | Fluid growth from liquid combined with preceding diverse operation | 10 |
| 20100041216 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE - The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures. | 02-18-2010 |
| 20140017884 | Method for making Cu2-xSe nanoparticles and method for making deposited Cu2-xSe thin film by electrophoresis - In the present invention, copper(I) selenide (Cu | 01-16-2014 |
| 20140147996 | METHODS FOR FABRICATING BULK HETEROJUNCTIONS USING SOLUTION PROCESSING TECHNIQUES - Solvent mixtures useful for processing bulk heterojunction materials and methods for selecting the same are disclosed, wherein Hansen solubility parameters are utilized to select the solvent mixture. A solvent system using a fully nonhalogenated solvent mixture is disclosed. Also disclosed is a solvent mixture containing 20 vol. % acetophenone (AP) in mesitylene (MS), wherein the performance of the solvent system is comparable to dichlorobenzene. | 05-29-2014 |
| 20140322901 | SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING, AND PRODUCTS - A method for preparing semiconductor nanocrystals includes adding a non-protonated surface modification agent to semiconductor nanocrystal cores in a liquid medium to form a mixture; adding one or more precursors for forming a shell including a semiconductor material to the mixture under conditions for forming the shell over at least a portion of an outer surface of the cores, and adding an acid ligand to the mixture after addition of at least a portion of the one or more precursors. Semiconductor nanocrystals, other methods of making semiconductor nanocrystals, compositions and products including semiconductor nanocrystals are also disclosed. | 10-30-2014 |
| 438498000 | Differential etching | 2 |
| 20140363954 | Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate - A mask layer is formed on a Ga polarity surface of the GaN substrate as a growth substrate. Subsequently, a protective film PF is formed on a N polarity surface of the GaN substrate. Then, a plurality of concave portions is formed from the mask layer extending to the GaN substrate, to thereby form a seed crystal. The seed crystal is etched in a Na melt, and a plurality of concave portions having a facet plane exposed. The seed crystal and the raw materials are placed in a crucible, and the pressure and temperature inside the crucible are increased. Thus, a target GaN layer is grown in the upward direction on the surface of the mask layer and the lateral direction over the concave portions. | 12-11-2014 |
| 20160079062 | PRE-CLEAN OF SILICON GERMANIUM FOR PRE-METAL CONTACT AT SOURCE AND DRAIN AND PRE-HIGH K AT CHANNEL - The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species. | 03-17-2016 |
| 438499000 | Doping of semiconductor | 4 |
| 20080242063 | Solder composition doped with a barrier component and method of making same - A solder composition and a method of making the composition. The solder composition comprises a Sn-containing base material and a barrier component having a reactivity with Sn which is higher than a reactivity of Ni or Cu with Sn, the barrier component being present in the composition in an amount sufficient to reduce a reactivity of Sn with both Ni and Cu. | 10-02-2008 |
| 20100009525 | METHOD INCLUDING PRODUCING A MONOCRYSTALLINE LAYER - A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface region is momentarily melted. A layer is epitaxially deposited on the near-surface region that has solidified in monocrystalline fashion. | 01-14-2010 |
| 20130237042 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming, by epitaxial growth, a silicon carbide film on the silicon carbide substrate into which the ions have been implanted; and forming a pn junction region in the silicon carbide film. | 09-12-2013 |
| 20140057421 | SEMICONDUCTOR DEVICE PRODUCTION METHOD - A semiconductor device production method includes: forming a protection film on a semiconductor substrate; forming a first resist pattern on the protection film; implanting a first impurity ion into the semiconductor substrate using the first resist pattern as a mask; removing the first resist pattern; forming on the surface of the semiconductor substrate a chemical reaction layer that takes in surface atoms from the semiconductor substrate through chemical reaction, after the removing of the first resist pattern; removing the chemical reaction layer formed on the semiconductor substrate and removing the surface of the semiconductor substrate, after the forming of the chemical reaction layer; and growing a semiconductor layer epitaxially on the surface of the semiconductor substrate, after the removing of the surface of the semiconductor substrate. | 02-27-2014 |
