Class / Patent application number | Description | Number of patent applications / Date published |
438483000 | Compound semiconductor | 42 |
20080248632 | Methods of Fabricating Multi-Bit Phase-Change Memory Devices and Devices Formed Thereby - Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed. | 10-09-2008 |
20080248633 | Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film on Silicon Substrate - The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality. | 10-09-2008 |
20080248634 | ENHANCEMENT MODE III-NITRIDE FET - A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device. | 10-09-2008 |
20080299746 | Semiconductor Substrate Fabrication Method - A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer. | 12-04-2008 |
20080318397 | Junction Diode with Reduced Reverse Current - A method for annealing a diode formed of a silicon-germanium alloy that minimizes leakage current is disclosed. The method includes the steps of forming semiconductor pillars of an alloy of silicon and germanium; heating the pillars at a first temperature for at least 30 minutes, and then heating the pillars at a second temperature higher than the first temperature of the alloy for up to 120 seconds. The invention further includes a monolithic three dimensional memory array of a plurality of p-i-n diodes, the p-i-n diodes being formed of a silicon-germanium alloy that have been subjected to a two-stage heating process. | 12-25-2008 |
20090004834 | SUBSTRATES AND METHODS FOR FABRICATING THE SAME - An embodiment of the invention provides a substrate. The substrate comprises a single crystal substrate. An epitaxial buffer film is on the single crystal substrate. An epitaxial ZnGa | 01-01-2009 |
20090087965 | STRUCTURE AND METHOD FOR MANUFACTURING PHASE CHANGE MEMORIES - A method for manufacturing at least one resistively switching memory cell including generating a first electrode; depositing a phase change material layer, the phase change material layer including a composition of formula Ga | 04-02-2009 |
20090098717 | CO-SPUTTER DEPOSITION OF METAL-DOPED CHALCOGENIDES - The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (Ge | 04-16-2009 |
20090104757 | Method for producing group III nitride-based compound semiconductor - An object of the present invention is to remove micro-scratches on a surface of a GaN substrate cut from a GaN ingot. The invention is directed to establish a method for surface treatment of a GaN substrate, including heating the surface in an atmosphere containing trimethylgallium, ammonia, and hydrogen. It is preferable that the trimethylgallium feeding rate is 150 μmol/min or higher, the ratio of trimethylgallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000° C. to 1,250° C. In addition, the temperature of the surface treatment is set to be higher than that of the following GaN growth, and the feed rate of trimethylgallium is lower than that of the growth procedure. RMS of roughness on the substrate was equal to or less than 1.3 nm, and the substrate whose step condition is excellent can be obtained. | 04-23-2009 |
20090104758 | GALLIUM NITRIDE MATERIALS AND METHODS - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 04-23-2009 |
20090111250 | METHOD FOR PREPARING COMPOUND SEMICONDUCTOR SUBSTRATE - Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process. | 04-30-2009 |
20090149006 | Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions - In methods of forming a phase-change material layer pattern, an insulation layer having a recessed portion may be formed on a substrate, and a phase-change material layer may be formed on the insulation layer to fill the recessed portion. A first polishing process may be performed on the phase-change material layer using a first slurry composition to partially remove the phase-change material layer, the first slurry composition having a first polishing selectivity between the insulation layer and the phase-change material layer. A second polishing process may be performed on the phase-change material layer using a second slurry composition to form a phase-change material layer pattern in the recessed portion, the second slurry composition having a second polishing selectivity substantially lower than the first polishing selectivity. | 06-11-2009 |
20090162999 | Method of Growing Nitride Semiconductor material - A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices. | 06-25-2009 |
20090191695 | Method of manufacturing nitride semiconductor substrate - A method of manufacturing a nitride semiconductor substrate according to example embodiments may include forming a buffer layer on a (100) plane of a silicon (Si) substrate. The buffer layer may have a hexagonal crystal system and a (1010) plane. A nitride semiconductor layer may be epitaxially grown on the buffer layer. The nitride semiconductor layer may have a (1010) plane. Accordingly, because example embodiments enable the use of a relatively inexpensive Si substrate, a more economical nitride semiconductor substrate having a relatively large diameter may be achieved. | 07-30-2009 |
20090215249 | METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER - Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers. | 08-27-2009 |
20100015787 | Realizing N-Face III-Nitride Semiconductors by Nitridation Treatment - A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition. | 01-21-2010 |
20100035418 | PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS - The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusion barriers that prevent diffusion of contaminants during annealing. The invention also includes embodiments where the at least partially relaxed strained layer is patterned into islands by etching trenches and the like. The invention also provides semiconductor structures resulting from these methods, and further, provides such structures where the semiconductor materials are suitable for application to LED devices, laser devices, photovoltaic devices, and other optoelectronic devices. | 02-11-2010 |
20100120235 | METHODS FOR FORMING SILICON GERMANIUM LAYERS - Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method includes depositing a silicon germanium seed layer atop the substrate using a first precursor comprising silicon and chlorine; and depositing a silicon germanium bulk layer atop the silicon germanium seed layer using a second precursor comprising silicon and hydrogen. In some embodiments, the first silicon precursor gas may comprise at least one of dichlorosilane (H | 05-13-2010 |
20100129994 | Method for forming a film on a substrate - A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof. | 05-27-2010 |
20100129995 | METHOD OF FORMING VARIABLE RESISTANCE MEMORY DEVICE - A method of forming a variable resistance memory device includes forming an opening in an insulating layer, and forming a variable resistance layer by filling the opening with an antimony rich antimony-tellurium compound. | 05-27-2010 |
20100136770 | GROUP-III METAL NITRIDE AND PREPARATION THEREOF - A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500° C.-800° C. The method further includes introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film. | 06-03-2010 |
20100227457 | Method of forming phase change material layer and method of fabricating phase change memory device - A method of forming a phase change material layer and a method of fabricating a phase change memory device, the method of forming a phase change material layer including forming an amorphous germanium layer by supplying a germanium containing first source into a reaction chamber; cutting off supplying the first source after forming the amorphous germanium layer; and forming amorphous Ge | 09-09-2010 |
20100311229 | AMORPHOUS GROUP III-V SEMICONDUCTOR MATERIAL AND PREPARATION THEREOF - A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface. | 12-09-2010 |
20100330784 | METHOD FOR PREPARING COMPOUND SEMICONDUCTOR SUBSTRATE - Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process. | 12-30-2010 |
20110021007 | LIQUID CHEMICAL DEPOSTION APPARATUS AND PROCESS AND PRODUCTS THEREFROM - A method, apparatus and material produced thereby in an amorphous or crystalline form having multiple elements with a uniform molecular distribution of elements at the molecular level. | 01-27-2011 |
20110027976 | METHOD OF FORMING CHALCOGENIDE THIN FILM - The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern. | 02-03-2011 |
20110124184 | Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor - A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s). | 05-26-2011 |
20110124185 | GRADED CORE/SHELL SEMICONDUCTOR NANORODS AND NANOROD BARCODES - Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed. | 05-26-2011 |
20110207301 | ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION WITH SATURATION CONTROL - A process for coating a substrate heated to a temperature below the condensation temperature of a semiconductor material at atmospheric pressure is disclosed, the process including the steps of mixing a mass of semiconductor material and a heated inert gas stream, vaporizing the controlled mass of semiconductor material within the inert gas to generate a sub-saturated fluid mixture, directing the sub-saturated fluid mixture at the substrate, wherein the substrate is at substantially atmospheric pressure, depositing a layer of the semiconductor material onto a surface of the substrate, extracting undeposited semiconductor material, and repeating the steps of generating, directing, depositing, and extracting, to minimize an amount of undeposited semiconductor material. | 08-25-2011 |
20110287614 | Group 6a/Group 3a ink and methods of making and using same - A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; an organic chalcogenide component having a formula selected from RZ—Z′R′ and R | 11-24-2011 |
20110312164 | FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING A CUSTOM OXIDE LAYER - The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision. | 12-22-2011 |
20120058630 | Linear Cluster Deposition System - A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers. | 03-08-2012 |
20120108038 | AMORPHOUS GE/TE DEPOSITION PROCESS - Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN) | 05-03-2012 |
20120115315 | LOW TEMPERATURE GST PROCESS - A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises Ge | 05-10-2012 |
20120208357 | METHODS AND SYSTEMS FOR FORMING THIN FILMS - A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films. | 08-16-2012 |
20120276721 | METHOD OF FORMING AN OXIDE LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE OXIDE LAYER - A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured. | 11-01-2012 |
20120295425 | METHODS OF FABRICATING DEVICES BY LOW PRESSURE COLD WELDING - Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components. | 11-22-2012 |
20130157447 | SINGLE CRYSTAL SILICON TFTS MADE BY LATERAL CRYSTALLIZATION FROM A NANOWIRE SEED - A method can include depositing a thin metal film on a substrate of a sample, establishing a metal island on the substrate by patterning the thin metal film, and annealing the sample to de-wet the metal island and form a metal droplet from the metal island. The method can also include growing a nanowire on the substrate using the metal droplet as a catalyst, depositing a thin film of a semiconductor material on the sample, annealing the sample to allow for lateral crystallization to form a crystal grain, and patterning the crystal grain to establish a crystal island. An electronic device can be fabricated using the crystal island. | 06-20-2013 |
20130288462 | TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS - Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge | 10-31-2013 |
20140106549 | LOW TEMPERATURE GST PROCESS - A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises Ge | 04-17-2014 |
20140295651 | BACKSIDE STRESS COMPENSATION FOR GALLIUM NITRIDE OR OTHER NITRIDE-BASED SEMICONDUCTOR DEVICES - A method includes forming a stress compensation layer over a first side of a semiconductor substrate and forming a Group III-nitride layer over a second side of the substrate. Stress created on the substrate by the Group III-nitride layer is at least partially reduced by stress created on the substrate by the stress compensation layer. Forming the stress compensation layer could include forming a stress compensation layer from amorphous or microcrystalline material. Also, the method could include crystallizing the amorphous or microcrystalline material during subsequent formation of one or more layers over the second side of the substrate. Crystallizing the amorphous or microcrystalline material could occur during subsequent formation of the Group III-nitride layer and/or during an annealing process. The amorphous or microcrystalline material could create no or a smaller amount of stress on the substrate, and the crystallized material could create a larger amount of stress on the substrate. | 10-02-2014 |
20140308802 | METHOD OF MAKING A MULTICOMPONENT FILM - Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane. | 10-16-2014 |