| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438476000 | By layers which are coated, contacted, or diffused | 34 |
| 20090023273 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device comprising forming a transistor on a semiconductor substrate, forming an interlayer insulating film on the semiconductor substrate to cover the transistor, forming a passivation film on the interlayer insulating film, and annealing the semiconductor substrate having the passivation film in a gas atmosphere comprising at least one gas selected from the group of boron, silicon and hydrogen. | 01-22-2009 |
| 20090029528 | METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE - The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step. | 01-29-2009 |
| 20090186466 | SELF-MASKING DEFECT REMOVING METHOD - A method for removing defects from a semiconductor surface is disclosed. The surface of the semiconductor is first coated with a protective layer, which is later thinned to selectively reveal portions of the protruding defects. The defects are then removed by etching. Finally, also the protective layer is removed. According to the method, inadvertent thinning of the surface is prevented and removal of the defects is obtained. | 07-23-2009 |
| 20090209090 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step. | 08-20-2009 |
| 20090269908 | Manufacturing method of a semiconductor device - A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide. | 10-29-2009 |
| 20100105191 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER - The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region. | 04-29-2010 |
| 20100190320 | METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME - Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate. | 07-29-2010 |
| 20100233869 | METHOD OF FABRICATING EPI-WAFER, EPI-WAFER FABRICATED BY THE METHOD, AND IMAGE SENSOR FABRICATED USING THE EPI-WAFER - A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer. | 09-16-2010 |
| 20100279492 | Method of Fabricating Upgraded Metallurgical Grade Silicon by External Gettering Procedure - Upgraded metallurgical grade silicon (UMG-Si) is fabricated by a ‘green’ (environmental protected) external gettering procedure. Impurities concentration of the fabricated UMG-Si is reduced for 100 times than its source material. The UMG-Si obtained has a purity ratio reaching 4N to 6N. Thus, substrates made of the UMG-Si can be used in solar cells and related photoelectrical applications. | 11-04-2010 |
| 20110045657 | METHOD FOR FABRICATING REWRITABLE THREE-DIMENSIONAL MEMORY DEVICE - A method for fabricating a three-dimensional semiconductor memory device including three-dimensionally arranged transistors includes forming a thin film structure comprising a plurality of thin films on a semiconductor substrate, patterning the thin film structure such that a penetration region is formed to expose the semiconductor substrate, forming a polycrystalline semiconductor layer to cover the resultant structure where the penetration region is formed, patterning the semiconductor layer to locally form a semiconductor pattern within the penetration region, and performing a post-treatment process to treat the semiconductor layer or the semiconductor pattern with a post-treatment material containing hydrogen or deuterium. | 02-24-2011 |
| 20110076838 | Gettering structures and methods and their application - An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation. | 03-31-2011 |
| 20110171814 | SILICON EPITAXIAL WAFER AND PRODUCTION METHOD FOR SAME - A method for preparing a silicon epitaxial wafer that includes a silicon single crystal wafer sliced from a CZ silicon ingot doped with carbon in a concentration range of not less than 5×10 | 07-14-2011 |
| 20120034761 | METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE - Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate. | 02-09-2012 |
| 20120149175 | METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR - A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor. | 06-14-2012 |
| 20120164818 | Process for Cleaning Wafers - Disclosed is a process for cleaning a wafer having an uneven pattern at its surface. The process includes at least: a step of cleaning the wafer; a step of substituting a cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and a step of drying the wafer. The process is characterized in that the cleaning liquid has a boiling point of 55 to 200° C., and characterized in that the water-repellent liquid chemical used for the substitution has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions. With this process, it is possible to provide a cleaning process for improving the cleaning step that tends to induce a pattern collapse. | 06-28-2012 |
| 20120295416 | ADHESIVE SHEET FOR PRODUCING SEMICONDUCTOR DEVICE - An object of the present invention is to provide an adhesive sheet that can capture cations mixed in from outside during various processes of manufacturing a semiconductor device to prevent deterioration in electrical characteristics of a semiconductor device to be manufactured and to improve product reliability. It is an adhesive sheet for producing a semiconductor device, in which when 2.5 g of the adhesive sheet is soaked in 50 ml of an aqueous solution containing 10 ppm of copper ions, and the solution is left at 120° C. for 20 hours, the concentration of copper ions in the aqueous solution is 0 to 9.9 ppm. | 11-22-2012 |
| 20120302042 | ADHESIVE COMPOSITION FOR PRODUCING SEMICONDUCTOR DEVICE AND ADHESIVE SHEET FOR PRODUCING SEMICONDUCTOR DEVICE - An object of the present invention is to provide an adhesive composition that can form an adhesive sheet for producing a semiconductor device capable of suppressing deterioration in ion scavengeability after the adhesive sheet goes through thermal history. It is an adhesive composition for producing a semiconductor device containing at least an organic complex-forming compound that forms a complex with cations, and the 5% weight loss temperature of the organic complex-forming compound measured by thermogravimetry is 180° C. or more. | 11-29-2012 |
| 20120302043 | PROCESS FOR DECARBURIZATION OF A SILICON MELT - The present invention relates to a novel process for decarburizing a silicon melt, and to the use thereof for production of silicon, preferably solar silicon or semiconductor silicon. | 11-29-2012 |
| 20130089971 | DEVICES INCLUDING, METHODS USING, AND COMPOSITIONS OF REFLOWABLE GETTERS - Methods for protecting circuit device materials, optoelectronic devices, and caps using a reflowable getter are described. The methods, devices and caps provide advantages because they enable modification of the shape and activity of the getter after sealing of the device. Some embodiments of the invention provide a solid composition comprising a reactive material and a phase changing material. The combination of the reactive material and phase changing material is placed in the cavity of an electronic device. After sealing the device by conventional means (epoxy seal for example), the device is subjected to thermal or electromagnetic energy so that the phase changing material becomes liquid, and consequently: exposes the reactive material to the atmosphere of the cavity, distributes the getter more equally within the cavity, and provides enhanced protection of sensitive parts of the device by flowing onto and covering these parts, with a thin layer of material. | 04-11-2013 |
| 20130309845 | METHOD OF PROCESSING SUBSTRATE - A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water. | 11-21-2013 |
| 20140147990 | Apparatus And Methods For Backside Passivation - Provided apparatus and methods for back side passivation of a substrate. The systems comprise an elongate support with an open top surface forming a support ring so that when a substrate is on the support ring, a cavity is formed within the elongate support. A plasma generator is coupled to the cavity to generate a plasma within the cavity to deposit a passivation film on the back side of the substrate. | 05-29-2014 |
| 20140187022 | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension - Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure. | 07-03-2014 |
| 20140187023 | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Compression - Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure. | 07-03-2014 |
| 20140273407 | Formulations And Methods For Surface Cleaning And Passivation of CdTe Substrates - Methods and compositions for the surface cleaning and passivation of CdTe substrates usable in solar cells are disclosed. In some embodiments amine-containing chelators are used and in other embodiments phosphorus-containing chelators are used. | 09-18-2014 |
| 20140342532 | DELICATE DRY CLEAN - A method of selectively removing fluorocarbon layers from overlying low-k dielectric material is described. These protective plasma treatments (PPT) are delicate alternatives to traditional post-etch treatments (PET). The method includes sequential exposure to (1) a local plasma formed from a silicon-fluorine precursor followed by (2) an exposure to plasma effluents formed in a remote plasma from a fluorine-containing precursor. The remote plasma etch (2) has been found to be highly selective of the residual material following the local plasma silicon-fluorine exposure. The sequential process (1)-(2) avoids exposing the low-k dielectric material to oxygen which would undesirably increase its dielectric constant. | 11-20-2014 |
| 20140377938 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device is disclosed which includes a diffusion step of forming, on a CZ-FZ silicon semiconductor substrate, a deep diffusion layer involving a high-temperature and long-term thermal diffusion process which is performed at a thermal diffusion temperature of 1290° C. to a melting temperature of a silicon crystal for 100 hours or more; and a giving step of giving a diffusion source for an interstitial silicon atom to surface layers of two main surfaces of the silicon semiconductor substrate before the high-temperature, long-term thermal diffusion process. The step of giving the diffusion source for the interstitial silicon atom to the surface layers of the two main surfaces of the silicon semiconductor substrate is performed by forming thermally-oxidized films on two main surfaces of the silicon semiconductor substrate or by implanting silicon ions into surface layers of the two main surfaces of the silicon semiconductor substrate. | 12-25-2014 |
| 20150044858 | FILM-FORMING MATERIAL - A film-forming material including a metal oxide such as a SiO | 02-12-2015 |
| 20150050799 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (PO-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component. | 02-19-2015 |
| 20150064881 | METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS - A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type. | 03-05-2015 |
| 20150118828 | Reduction of native oxides by annealing in reducing gas or plasma - Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of high-k and low-k metal-oxide layers formed on these semiconductors. Even if pre-existing native oxide is initially removed from the bare semiconductor surface, some metal oxide layers are oxygen-permeable in thicknesses below about 25 Å thick. Oxygen-containing species used in the metal-oxide deposition process may diffuse through these permeable layers, react with the underlying semiconductor, and re-grow the native oxide. To eliminate or mitigate this re-growth, the substrate is exposed to a gas or plasma reductant (e.g., containing hydrogen). The reductant diffuses through the permeable layers to react with the re-grown native oxide, detaching the oxygen and leaving the un-oxidized semiconductor. The reduction product(s) resulting from the reaction may then be removed from the substrate (e.g., driven off by heat). | 04-30-2015 |
| 20150118829 | METHODS OF FORMING A SEMICONDUCTOR LAYER INCLUDING GERMANIUM WITH LOW DEFECTIVITY - Methods of forming a semiconductor layer including germanium with low defectivity are provided. The methods may include sequentially forming a silicate glass layer, a diffusion barrier layer including nitride and an interfacial layer including oxide on a substrate. The methods may also include forming a first semiconductor layer on the interfacial layer and converting a portion of the first semiconductor layer into a second semiconductor layer having a germanium concentration therein that is higher than a germanium concentration of the first semiconductor layer. | 04-30-2015 |
| 20160049311 | WAFER BACKSIDE PARTICLE MITIGATION - A method of particle mitigation which includes obtaining a semiconductor wafer having a nonfunctional backside and a functional frontside on which semiconductor devices are formed by one or more lithography processes; coating the backside with a layer comprising silicon or amorphous carbon; planarizing the coated backside by a planarizing process; placing the semiconductor wafer onto a wafer chuck such that the wafer chuck makes direct contact with the coated backside; and while maintaining the coated backside in direct contact with the wafer chuck, performing a first lithographic process on the frontside. | 02-18-2016 |
| 20160093508 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The present invention provides a technology that includes: forming an intermediate film on a substrate having an insulating film formed thereon; and forming a metal film on the intermediate film. The intermediate film is more susceptible to oxidation than the metal film and has a smaller thickness than the metal film. | 03-31-2016 |
| 20160118267 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer. | 04-28-2016 |
