| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438465000 | Having a perfecting coating | 26 |
| 20080280423 | CHILLED WAFER DICING - A method and system for dicing a wafer is disclosed. One illustrative method includes forming a layer of frozen material above a plurality of integrated circuit die on a substrate and performing a cutting process to cut through the layer of frozen material and the substrate to singulate the plurality of die. Another method includes performing a cutting process to singulate a plurality of integrated circuit die having a layer of frozen material formed above the plurality of die. One illustrative system comprises a substrate having a plurality of integrated circuit die, a cooled layer of material attached to the substrate and a dicing saw for singulating the plurality of die. Another illustrative system comprises a semiconducting substrate comprising a backside and a plurality of integrated circuit die, a layer of material attached to the backside of the substrate, the layer of material being at a temperature of 10° C. or less and a dicing saw for singulating the plurality of die. | 11-13-2008 |
| 20090149004 | Micromirror manufacturing method - A micro-mirror manufacturing method for dividing a plurality of micro-mirror devices each having at least one mirror, formed on a semiconductor wafer into individual micro-mirror devices can be provided. The manufacturing method comprises a step of depositing an inorganic protection layer on the mirror before separating the micro-mirror devices from the wafer and a step of removing the inorganic protection layer after separating the micro-mirror devices from the wafer. | 06-11-2009 |
| 20090155985 | Inhibition of Metal Diffusion Arising from Laser Dicing - A method divides a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the process exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment comprises a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch can be performed on the chip. | 06-18-2009 |
| 20090176349 | Method and Device for Machining a Wafer, in Addition to a Wafer Comprising a Separation Layer and a Support Layer - A process and an apparatus are described for the treatment of wafers, in particular for the thinning of wafers. A wafer with a carrier layer and an interlayer arranged between the carrier layer and the wafer is also described, in which the interlayer is a plasmapolymeric layer that adheres to the wafer and adheres more strongly to the carrier layer than to the wafer. | 07-09-2009 |
| 20090181521 | Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument - A semiconductor device with its package size close to its chip size has a stress absorbing layer, allows a patterned flexible substrate to be omitted, and allows a plurality of components to be fabricated simultaneously. There is: a step of forming electrodes ( | 07-16-2009 |
| 20090209089 | DICING DIE-BONDING FILM - The present invention provides a dicing die-bonding film including a dicing film having a pressure sensitive adhesive layer provided on a base material and a die-bonding film provided on the pressure sensitive adhesive layer, and having excellent storage stability of a product even at room temperature. The dicing die-bonding film in the present invention is a dicing die-bonding film having a dicing film including a radiation curable pressure sensitive adhesive layer provided onto a base material and a die-bonding film provided on the pressure sensitive adhesive layer, in which a pressure sensitive adhesive in the pressure sensitive adhesive layer is constituted by containing an acryl polymer, and in which the acid value of the acryl polymer is in a range of 0.01 to 1 and the iodine value is in a range of 5 to 10. | 08-20-2009 |
| 20090215247 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Illumination devices ( | 08-27-2009 |
| 20090221129 | SEMICONDUCTOR SEAL RING AND METHOD OF MANUFACTURE THEREOF - An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used. | 09-03-2009 |
| 20090239355 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes spraying fluid onto a surface of a treatment target substrate including a semiconductor substrate; forming a protection layer on the surface of the treatment target substrate after spraying the fluid; selectively removing the protection layer and a part of the treatment target substrate by an energy beam; and conducting removal processing on an area of the treatment target substrate from which the protection layer and the part of the treatment target substrate are selectively removed. | 09-24-2009 |
| 20110014777 | METHOD FOR PROCESSING A SUBSTRATE, METHOD FOR MANUFACTURING A SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR CHIP HAVING A RESIN ADHESIVE LAYER - A mask used when a semiconductor wafer is diced into individual semiconductor chips by plasma etching is formed as follows. First, a pattern of a liquid-repellent film is formed by printing a liquid-repellent liquid on the area to be etched on the rear surface of the semiconductor wafer. Next, a resin film thicker than the liquid-repellent film is formed in the area not having the liquid-repellent film by supplying a liquid resin to the rear surface on which the liquid-repellent pattern has been formed. Then, the resin film is cured to form the mask covering the area other than the area to be removed by the etching. This method allows the formation of an etching mask without using a high-cost method such as photolithography. | 01-20-2011 |
| 20110237050 | METHOD FOR PROCESSING WAFER - The present invention provides a method which includes sticking a surface protection sheet for dicing onto a surface of a wafer and cutting the sheet together with the wafer to protect the surface of the wafer from being contaminated by deposition of a dust such as swarf and the like, and picking up a chip without causing cracking or chipping in the chip after a dicing step, in the steps of dicing the wafer and then picking up the chip. The method includes: sticking the surface protection sheet for dicing onto the surface of the wafer; cutting the sheet together with the wafer; subsequently giving a stimulus to the surface protection sheet for dicing to peel the end of the chip from the dicing tape; and then picking up the chip. | 09-29-2011 |
| 20120171844 | DICING DIE BONDING FILM, SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE - A dicing die bonding film including a bonding layer; and a pressure-sensitive adhesive layer adjoining the bonding layer, the pressure-sensitive adhesive layer having a storage modulus of about 400 to about 600 kPa at 25° C. and a peel strength of about 200 to about 350 mN/25 mm with respect to the bonding layer as measured according to KS-A-01107 standard. | 07-05-2012 |
| 20120208350 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention aims to provide a method of manufacturing a semiconductor device that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer, while also suppressing an increase in the number of steps in the manufacturing process. This object is achieved by a method of manufacturing a semiconductor device including the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together. | 08-16-2012 |
| 20120329250 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element. | 12-27-2012 |
| 20130089970 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device including a step of attaching a surface protective tape onto the surface of a wafer which has completed the wafer process, a step of subjecting the back surface of the wafer to back grinding, and a step of attaching a peeling assist tape onto the surface protective tape while vacuum-adsorbing the back surface of the wafer to apply a tension to the assist tape, thereby separating the surface protective tape from the wafer, wherein a vacuum suction system has a peripheral suction system for the peripheral part of the wafer and an internal suction system for the internal region of the wafer. | 04-11-2013 |
| 20130143390 | DICING/DIE BONDING INTEGRAL FILM, DICING/DIE BONDING INTEGRAL FILM MANUFACTURING METHOD, AND SEMICONDUCTOR CHIP MANUFACTURING METHOD - A dicing/die bonding integral film of the present invention includes a base film, a pressure-sensitive adhesive layer which is formed on the base film and to which a wafer ring for blade dicing is bonded, and a bonding layer formed on the adhesive layer and having a central portion to which a semiconductor wafer to be diced is bonded, wherein a planar shape of the bonding layer is circular, an area of the bonding layer is greater than an area of the semiconductor wafer and smaller than an area of each of the base film and the adhesive layer, and a diameter of the bonding layer is greater than a diameter of the semiconductor wafer and less than an inner diameter of the wafer ring, and a difference in diameter between the bonding layer and the semiconductor wafer is greater than 20 mm and less than 35 mm, | 06-06-2013 |
| 20130149842 | LAMINATED SHEET AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE LAMINATED SHEET - The present invention provides a laminated sheet that can prevent the decrease in adhering strength of a resin composition layer and the deterioration in electrical reliability and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing. The laminated sheet has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min. | 06-13-2013 |
| 20130337634 | FABRICATION METHOD FOR PRODUCING SEMICONDUCTOR CHIPS WITH ENHANCED DIE STRENGTH - A fabrication method for producing semiconductor chips with enhanced die strength comprises following steps: forming a semiconductor wafer with enhanced die strength by comprising the substrate, the active layer on the front side of the substrate and the backside metal layer on the backside of the substrate, wherein at least one integrated circuit forms in the active layer; forming a protection layer on a front side of the semiconductor wafer; dicing the semiconductor wafer by at least one laser dicing process and removing the laser dicing residues and removing said protection layer by at least one etching process, whereby plural semiconductor chips with enhanced die strength are produced, and wherein the backside metal layer of said semiconductor chip fully covers the backside of said semiconductor chip after dicing. | 12-19-2013 |
| 20140017882 | METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH - Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. | 01-16-2014 |
| 20140087543 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other. | 03-27-2014 |
| 20140170836 | Chip Comprising a Fill Structure - A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge. | 06-19-2014 |
| 20150132925 | WAFER PROCESSING METHOD - A wafer processing method including a mask forming step of forming a mask for covering a region corresponding to each device on a functional layer formed on the front side of a substrate constituting a wafer, a groove forming step of spraying a fluid containing abrasive grains against the front side of the wafer to thereby form a groove for dividing the functional layer along each street, and an etching step of performing dry etching from the front side of the wafer to thereby form an etched groove along each street. Accordingly, it is possible to prevent that the functional layer may be separated to cause damage to each device. Furthermore, a wide area of the wafer can be processed at a time, so that the productivity can be improved. | 05-14-2015 |
| 20150311107 | WAFER EDGE WARP SUPPRESSION FOR THIN WAFER SUPPORTED BY TAPE FRAME - Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of reducing edge warping in a supported semiconductor wafer involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier comprising a tape frame mounted above the carrier tape. The method also involves adhering an adhesive tape to a front side of the semiconductor wafer and to at least a portion of the substrate carrier. The adhesive tape includes an opening exposing an inner region of the front side of the semiconductor wafer. | 10-29-2015 |
| 20150325480 | WAFER PROCESSING METHOD - A wafer has a substrate and a laminated layer formed on the substrate. The laminated layer includes low-permittivity insulating films. The laminated layer forms a plurality of crossing division lines and a plurality of devices formed in separate regions defined by the division lines. The processing method includes a cut groove forming step of cutting the substrate of the wafer along each division line by using a first cutting blade having a first thickness, thereby forming a cut groove having a depth smaller than the thickness of the substrate, so that a first uncut portion of the substrate is formed below the cut groove, and a dividing step of dividing the first uncut portion and the laminated layer along each division line by using a second cutting blade having a second thickness smaller than the first thickness or by etching after performing the cut groove forming step. | 11-12-2015 |
| 20160060489 | DICING FILM AND DICING DIE-BONDING FILM - The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*10 | 03-03-2016 |
| 20160254189 | Method for Dicing a Substrate with Back Metal | 09-01-2016 |
