Class / Patent application number | Description | Number of patent applications / Date published |
438105000 | HAVING DIAMOND SEMICONDUCTOR COMPONENT | 20 |
20080206924 | METHOD FOR FABTRICATING SEMICONDUCTOR DEVICE - According to the first aspect of the present invention, a method for fabricating a semiconductor device with a silicon carbide (SiC) film is comprised of a process to grow a silicon carbide film on a substrate; and a process to form a groove in the periphery of a region on the silicon carbide film in which crystal defects are aggregated. | 08-28-2008 |
20080254570 | ANGLE CONTROL OF MULTI-CAVITY MOLDED COMPONENTS FOR MEMS AND NEMS GROUP ASSEMBLY - A method of making a mold includes forming spaced mold cavities in a mold body. The mold cavities include geometrically similar portions, but have respective depths below an initial reference surface that vary as a function of position along a particular direction. The mold cavities can be formed using anisotropic etching of preferred crystal directions in single crystal materials such as silicon. A portion of the mold material adjacent the initial reference surface is removed to expose a new reference surface at a tilt angle with respect to the initial reference surface. The modified mold cavities have their respective axes at a new desired tilt angle relative to the new reference surface. | 10-16-2008 |
20080318359 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE - A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which the density of basal plane dislocations (BPDs) in particular is reduced in an SiC crystal substrate. Irregularities in the surface of the substrate due to this reduction also can be flattened. A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which, prior to forming an epitaxial growth layer on a silicon carbide substrate with an off-axis angle of 1° to 8°, parallel line-shape irregularities, which have an irregularity cross-sectional aspect ratio equal to or greater than the tangent of the off-axis angle of the silicon carbide substrate, are formed in the substrate surface. The irregularites have a height between 0.25 μm and 5 μm. | 12-25-2008 |
20090286352 | Diamond Bodies Grown on SIC Substrates and Associated Methods - The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a diamond body, including providing a non-particulate silicon carbide (SiC) mass having a pre-designed shape, placing the SiC mass under high pressure in association with a molten catalyst and a carbon source, and maintaining the SiC mass under high pressure to form a substantially monocrystalline diamond body. The diamond body may be formed across substantially all of the SiC mass having surface area exposed to the molten catalyst. As such, the diamond body may conform to the shape of the exposed surface area of the SiC mass. | 11-19-2009 |
20100105166 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES - Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates. | 04-29-2010 |
20100178730 | Direct-current plasma CVD apparatus and method for producing diamond using the same - The present invention is a direct-current plasma CVD apparatus comprising at least a fixed electrode and a substrate stage having a top flat face and combined with an electrode for placing a substrate, in which the substrate stage top face is not located on a line extended from a center of the fixed electrode in vertical direction, and an angle formed between a line of a length R connecting a center of the substrate stage top face with the center of the fixed electrode and the line extended in vertical direction from the center of the fixed electrode is 90° or less. As a result, there is provided a direct-current plasma CVD apparatus in which a high quality vapor phase growth film, such as diamond of a large area having few defects caused by the fall of the substances produced at the fixed electrode, can be obtained. | 07-15-2010 |
20100330739 | Diamond-Like Carbon Electronic Devices and Methods of Manufacture - Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp | 12-30-2010 |
20110070694 | DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME - An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide. In this case, the width of the groove and the thickness of the semiconductor board are determined such that light reflected off an interface between the first optical waveguide and the groove is weakened by light reflected from an interface between the groove and the semiconductor board, and by light reflected from an interface between the semiconductor board and the second optical waveguide. | 03-24-2011 |
20110117699 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability. | 05-19-2011 |
20120034737 | DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME - A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. | 02-09-2012 |
20120058602 | METHOD OF FORMING A WAVEGUIDE IN DIAMOND - N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers. | 03-08-2012 |
20120164786 | GALLIUM NITRIDE LIGHT EMITTING DEVICES ON DIAMOND - Wide bandgap devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, diodes (or other devices) are formed on diamond in at least two methods. A first method comprises growing a wide bandgap material on diamond and building devices on that grown layer. The second method involves bonding a wide bandgap layer (device or film) onto diamond and building the device onto the bonded layer. These devices may provide significantly higher efficiency than incandescent or fluorescent lights, and provide significantly higher light or energy density than other technologies. Similar methods and structures result in other wide bandgap semiconductor devices. | 06-28-2012 |
20120302005 | SELF ALIGNED CARBIDE SOURCE/DRAIN FET - A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure. | 11-29-2012 |
20130183798 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES USING INTERMEDIATE NUCLEATING LAYER - Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates. | 07-18-2013 |
20130280860 | METHOD FOR SYNTHESIZING A MATERIAL, IN PARTICULAR DIAMONDS, BY CHEMICAL VAPOR DEPOSITION, AS WELL AS DEVICE FOR APPLYING THE METHOD - Method for synthesising a material by chemical vapour deposition (CVD), according to which a plasma is created in a vacuum chamber in the vicinity of a substrate, and according to which a carbon-carrying substance and H | 10-24-2013 |
20130344651 | DISCHARGE SURFACE TREATMENT APPARATUS AND DISCHARGE SURFACE TREATMENT METHOD - A discharge surface treatment apparatus supplies an electrode material to a surface of a treatment target member by generating pulsating discharges across an inter-electrode gap to form a coating of the electrode material, and includes a switching element that turns application of a voltage from a power source to the inter-electrode gap on/off, a capacitance element that is connected to the switching element in parallel with the inter-electrode gap, an inductance element that is connected in series between both of the switching element and the capacitance element and the inter-electrode gap, and a control unit that includes a function of periodically performing on/off so that an induced electromotive force generated in the inductance element due to a change in the current of discharge generated across the inter-electrode gap can be used as a voltage that induces the next discharge | 12-26-2013 |
20140242750 | POLISHING SLURRY, AND POLISHING METHOD - The present invention provides a polishing slurry capable of polishing even high-hardness materials such as silicon carbide and gallium nitride at a high polishing speed. The present invention is a polishing slurry including a slurry containing a manganese oxide particle and a manganate ion for polishing high-hardness materials having a Mohs hardness of 8 or higher. In the present invention, the manganese oxide particle in the slurry is preferably 1.0 mass % or more; the manganese oxide is preferably manganese dioxide; and the manganate ion is preferably permanganate ion. The polishing slurry according to the present invention enables even high-hardness hardly-machinable materials such as silicon carbide and gallium nitride to be polished smoothly at a high speed. | 08-28-2014 |
20150371901 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes a step of preparing a semiconductor substrate including a semiconductor layer and an epitaxial layer formed on the semiconductor layer, a first division step of obtaining first individual pieces by dividing the semiconductor substrate so as to pass through a central region including a central point of the semiconductor substrate and having a diameter of 10 mm, and a second division step of obtaining second individual pieces by subdividing the first individual piece. | 12-24-2015 |
20160379825 | SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME - A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film. | 12-29-2016 |
20170236713 | DIAMOND SEMICONDUCTOR SYSTEM AND METHOD | 08-17-2017 |