Entries |
Document | Title | Date |
20080220561 | MELT-BASED PATTERNING FOR ELECTRONIC DEVICES - The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface. | 09-11-2008 |
20080220562 | Structure And Fabrication Of Self-Aligned High-Performance Organic FETs - A low channel length organic field-effect transistor can be produced in high volume and at low cost. The transistor structure includes successively deposited patterned layers of a first conductor layer acting as a source terminal, a first dielectric layer, a second conductor layer acting as a drain terminal, a semiconductor layer, a second dielectric layer, and a third conductor layer acting as the gate terminal. In this structure, the transistor is formed on the edge of the first dielectric between the first conductor layer and the second conductor layer. The second conductor layer is deposited on the raised surfaces formed by the dielectric such that conductive ink does not flow into the trough between the dielectric raised surfaces. This is accomplished by coating a flat or rotary print plate with the conductive ink, and applying the appropriate pressure to deposit the materials only on the raised surfaces of the dielectric. The second metal is automatically aligned to the layer beneath it. Due to this self-alignment and the short channel formed by the thickness of the dielectric material, a high-performance FET is produced without the requirement of high-resolution lithography equipment. | 09-11-2008 |
20080241989 | OLED PATTERNING METHOD - A method of patterning a substrate according to several steps, including: a) mechanically locating a first masking film over the substrate; and b) segmenting the first masking film into a first masking portion and one or more first opening portions in first locations. Next, mechanically locate a first removal film over the first masking portion and first opening portions. Afterwards, one or more of the first opening portions are adhered to the first removal film. The first removal film and one or more of the first opening portions adhered to the first removal film are mechanically removed to form one or more first openings in the first masking film. Finally, materials are deposited over the substrate through the first openings in the first masking film. | 10-02-2008 |
20080241990 | METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR SUBSTRATE - A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer. | 10-02-2008 |
20080248609 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible. | 10-09-2008 |
20080254568 | Composition and Method of Forming a Device - The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting. | 10-16-2008 |
20080268567 | Method for fabricating organic light emitting display - An exemplary method for fabricating an OLED ( | 10-30-2008 |
20080274584 | Method of microwave annealing for enhancing organic electronic devices - A method of microwave annealing for enhancing the properties of organic electronic devices is provided, including the steps of providing organic electronic devices and then microwave annealing the organic electronic devices. Because microwave annealing is non-contact and requires only a short time for annealing, and also because it anneals a target selectively and may anneal only the organic active layer of organic electronic device, microwave annealing allows organic molecules in the organic active layer to be rearranged quickly, so as to improve the arrangement of the organic molecules, and this in turn elevates the quantum efficiency thereof and enhances the properties of the organic electronic devices. | 11-06-2008 |
20080305574 | METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE USING CONDUCTIVE ORGANIC POLYMER HAVING NANOCRYSTALS EMBEDDED THEREIN - The method of manufacturing a nonvolatile memory device includes forming a lower conductive layer on a substrate; forming a first conductive organic layer on the substrate using spin coating; forming a metal layer for forming nanocrystals on the first conductive organic layer, the metal layer partially overlapping the first conductive organic layer; forming a second conductive organic layer on the first conductive organic layer using spin coating; transforming the metal layer into nanocrystals by curing; and forming an upper conductive layer on the second conductive organic layer, the upper conductive layer partially overlapping the nanocrystals. The conductive organic polymer may be poly-N-vinylcarbazole (PVK) or polystyrene (PS). | 12-11-2008 |
20080311698 | Fabrication of self-aligned via holes in polymer thin films - A low-cost and efficient process produces self-aligned vias in dielectric polymer films that provides electrical connection between a top conductor and a bottom conductor. The process is achieved by printing conductive posts on the first patterned conductive layer, followed by the deposition of an unpatterned layer dielectric, followed by the deposition of a second patterned conductive layer. The vias are formed during the flash annealing of the post after the dielectric is deposited, but before the second conductive layer is deposited. In this process, the post material is annealed with a flash of light, resulting in a release of energy which removes the dielectric on the top of the post. | 12-18-2008 |
20090004771 | METHODS FOR MAKING ELECTRONIC DEVICES WITH A SOLUTION DEPOSITED GATE DIELECTRIC - A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles. | 01-01-2009 |
20090004772 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate. | 01-01-2009 |
20090047753 | Scaffold-organized clusters and electronic devices made using such clusters - A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising, for example, polynucleotides and/or polypeptides, and coupling the clusters to the scaffold. Methods of producing arrays in predetermined patterns and electronic devices that incorporate such patterned arrays are also described. | 02-19-2009 |
20090053851 | ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME - An organic thin film transistor array substrate including a substrate divided into an LCD region and an OTFT region; a first dielectric layer formed on the substrate in the LCD region and having a first uneven portion; an organic semiconducting layer formed on the substrate in the OTFT region; a gate, source, and drain formed in the OTFT region, wherein the source and drain are in contact with the organic semiconducting layer to form a channel between the source and drain; and a pixel electrode formed on the first uneven portion of the first dielectric layer in the LCD region. | 02-26-2009 |
20090061558 | METHOD OF FABRICATING ORGANIC ELECTRONIC DEVICE - A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a patterned spacing layer on the flexible substrate with a spacing material deposition source and a mask; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate. | 03-05-2009 |
20090068788 | Method and device for producing electronic components - The invention relates to a method for producing electronic components in a vacuum. The aim of the invention is to create flexible electronic components that have an optimum action, are cost-effective, and easy to produce in a single working cycle. To this end, a carrier film ( | 03-12-2009 |
20090081824 | STACKED ORGANIC MEMORY DEVICES AND METHODS OF OPERATING AND FABRICATING - The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device. | 03-26-2009 |
20090087944 | ELECTRONIC DEVICES WITH HYBRID HIGH-K DIELECTRIC AND FABRICATION METHODS THEREOF - Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers. | 04-02-2009 |
20090093082 | ORGANIC LIGHT-EMITTING DIODE AND METHOD OF FABRICATING THE SAME - An organic light-emitting diode and method of fabricating the same. The organic light-emitting diode includes a first substrate, a first electrode installed on an inner surface of the first substrate, an organic light-emitting layer installed on the first electrode, a second electrode installed on the organic light-emitting layer, an oxide layer formed on the second electrode, and a second substrate bound to the inner surface of the first substrate to form an airtight space. | 04-09-2009 |
20090098680 | BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES - There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon; a bank structure defining pixel areas over the electrode structures; and a thin layer of insulative inorganic material between the electrode structures and the bank structures. The bank structure is removed from and not in contact with the electrode structures by a distance of at least 0.1 microns. | 04-16-2009 |
20090111210 | Method for Organic Semiconductor Material Thin-Film Formation and Process for Producing Organic Thin Film Transistor - A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film. The method for organic semiconductor material thin film formation is characterized in that, when the surface free energy of the surface of the substrate is γ | 04-30-2009 |
20090111211 | FLAT PANEL DISPLAY AND MANUFACTURING METHOD OF FLAT PANEL DISPLAY - The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance. | 04-30-2009 |
20090117686 | METHOD OF FABRICATING ORGANIC SEMICONDUCTOR DEVICE - A method of fabricating an organic semiconductor device includes following steps. A gate conductive layer is formed on a substrate, and then a gate dielectric layer is formed. Next, patterned metal layers are formed on the gate dielectric layer beside the gate conductive layer. An electrode modified layer is then formed on the surface and the sidewall of each patterned metal layer, and the patterned metal layers and the electrode modified layers formed thereon serve as a source and a drain. Thereafter, an organic semiconductor layer is formed on the source and the drain and on a portion of the gate dielectric layer exposed between the source and the drain to be an active layer. | 05-07-2009 |
20090124039 | LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS - A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates. | 05-14-2009 |
20090124040 | FIELD EFFECT TRANSISTOR, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING LAMINATED MEMBER - There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility. | 05-14-2009 |
20090148979 | FABRICATING APPARATUS WITH DOPED ORGANIC SEMICONDUCTORS - A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light. | 06-11-2009 |
20090170237 | Printed organic logic circuits using an organic semiconductor as a resistive load device - A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of an OFET to a first power supply voltage, a second portion for coupling a drain of the OFET to an output terminal and a first load resistor terminal, and a third portion for coupling a second load resistor terminal to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form an OFET active area, and for overlapping a portion of the second and third metal layer portions to form a toad resistor, providing a dielectric layer for overlapping the active area of the OFET and the semiconductor area of the load resistor to isolates the first metal layer and semiconductor area from the second metal layer, and providing a second metal layer for overlapping the active area of the OFET to form a gate of the OFET and an input terminal. | 07-02-2009 |
20090170238 | Printed organic logic circuits using a floating gate transister as a load device - A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of a first OFET to a first power supply voltage, a second portion for coupling a drain of the first OFET to an output terminal and to a source of a second OFET, and a third portion for coupling a drain of the second OFET to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form a first OFET active area, and for overlapping a portion of the second and third metal layer portions to form a second OFET active area, providing a dielectric layer for overlapping the active area and isolates the first metal layer and semiconductor layer from the second metal layer, and providing a second metal layer for overlapping the active area of the first OFET to form a gate of the first OFET and an input terminal, and for overlapping the active area of the second OFET to form a floating gate for the second OFET. | 07-02-2009 |
20090215222 | Manufacturing method of semiconductor device - When a thin film transistor is manufactured by using a printing method, the precision of alignment between a first electrode and a second electrode becomes a problem. If it is manufactured by using photolithography, a photomask for each layer is necessary, resulting in the cost being increased. The essence of the present invention is that not only processing the gate shape is carried out over the substrate by using a resist pattern formed by exposing using a photo-mask for the gate pattern but also processing the source-drain electrodes is carried out by lifting-off. As a result, alignment between the source-drain electrode and the gate electrode is carried out. | 08-27-2009 |
20090215223 | ELECTROLUMINESCENT DEVICE - An optical device comprising an anode, a cathode comprising barium, strontium or calcium, and a layer of organic semiconducting material between the anode and the cathode wherein a layer of hole transporting and electron blocking material is located between the anode and the layer of organic semiconducting material. | 08-27-2009 |
20090221113 | METHOD OF FABRICATING ORGANIC MEMORY DEVICE - A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin film is formed on the bottom surface treatment layer, and a top electrode is formed on the polymer thin film. | 09-03-2009 |
20090239333 | Organic semiconductor device and method of manufacturing the same - A low-cost and efficient process producing improved organic electronic devices such as transistors that may be used in a variety of applications is described. The applications may include radio frequency identification (RFID) devices, displays and the like. In one embodiment, the improved process is implemented by flash annealing a substrate with an energy having wavelengths ranging from about 250 nm to about 1100 nm or higher. In this flash annealing process energy having wavelengths from about 250 nm to about 350 nm or higher is substantially prevented from irradiating the substrate. | 09-24-2009 |
20090253228 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, AND ACTIVE MATRIX DISPLAY AND RADIO RECOGNITION TAG USING THE SAME - An organic thin film transistor of the present invention includes a substrate ( | 10-08-2009 |
20090263932 | Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films - Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices. | 10-22-2009 |
20090263933 | FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING SAME - A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): | 10-22-2009 |
20090275167 | METHOD MAKING AN ELECTRICAL DEVICE - Conventionally, organic semiconductor devices are usually formed by either laser ablation, photolithography or by conductive inkjet printing. All these methods have short coming such as either being unsuitable for high volume production, slow, expensive or as is particularly the case in inject printing, the choice of metals used is restricted to those which can be formed as inks. The present invention employs flexography to print a resist pattern ( | 11-05-2009 |
20090317941 | ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF - An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode. | 12-24-2009 |
20090317942 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved. | 12-24-2009 |
20100009497 | PERFORMANCE IMPROVEMENTS OF OFETS THROUGH USE OF FIELD OXIDE TO CONTROL INK FLOW - An OFET includes a thick dielectric layer with openings in the active region of a transistor. After the field dielectric layer is formed, semiconductor ink is dropped in the active region cavities in the field dielectric layer, forming the semiconductor layer. The ink is bounded by the field dielectric layer walls. After the semiconductor layer is annealed, dielectric ink is dropped into the same cavities. As with the semiconductor ink, the field dielectric wall confines the flow of the dielectric ink. The confined flow causes the dielectric ink to pool into the cavity, forming a uniform layer within the cavity, and thereby decreasing the probability of pinhole shorting. After the dielectric is annealed, a gate layer covers the active region thereby completing a high performance OFET structure. | 01-14-2010 |
20100022048 | Semiconductor device and manufacturing method therefor - The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously. | 01-28-2010 |
20100029040 | METHOD FOR FORMING ORGANIC SEMICONDUCTOR THIN FILM AND METHOD OF MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE - A method for forming an organic semiconductor thin film includes the steps of forming a mixed ink layer on a principal plane of a printing plate, the mixed ink layer including a mixture of an organic semiconductor material incapable of transcription and an organic material capable of transcription from the printing plate to a substrate in ink form dissolved in a solvent, and forming an organic semiconductor thin film by transcribing the mixed ink layer onto the substrate by transcribing the mixed ink layer on the printing plate to the substrate. | 02-04-2010 |
20100029041 | ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC ELECTRONIC DEVICE - An organic semiconductor material comprising a compound which has a generalized porphyrin skeleton and which has a molecular structure such that the distance from the generalized porphyrin ring plane to the center of each atom forming the generalized porphyrin skeleton, is not more than 1A. | 02-04-2010 |
20100035375 | MASKLESS NANOFABRICATION OF ELECTRONIC COMPONENTS - The present invention relates to systems, materials and methods for the formation of conducting, semiconducting, and dielectric layers, structures and devices from suspensions of nanoparticles. Drop-on-demand systems are used in some embodiments to fabricate various electronic structures including conductors, capacitors, FETs. Selective laser ablation is used in some embodiments to pattern more precisely the circuit elements and to form small channel devices. | 02-11-2010 |
20100035376 | METHOD OF LOCALLY CRYSTALLIZING ORGANIC THIN FILM AND METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING THE SAME - A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film. | 02-11-2010 |
20100035377 | Transfer Coating Method - A method for partially coating a structure having one or more small protruding features is provided. The method includes: (a) providing a structure comprising a base and a protruding feature attached to the base of the structure, the feature having a diameter or width of about 1 mm or less; (b) contacting the protruding feature with a substantially uniform layer of viscous coating material, the layer having a pre-determined thickness, to transfer at least some of the coating material from the layer of coating material to the protruding feature, without contacting the base of the structure with the layer of viscous coating material; and (c) separating the structure from the layer of coating material to form a substantially uniformly coated protruding feature, wherein the coating occupies a desired pre-determined area on the feature. | 02-11-2010 |
20100087032 | METHOD FOR PATTERNING OF ORGANIC FILM - A main subject is to provide a novel method for patterning of organic film which is suitable for manufacturing various organic devices. | 04-08-2010 |
20100093129 | SEMICONDUCTING INK FORMULATION - A semiconducting ink formulation comprises a semiconducting material; a first solvent; and a second solvent which is miscible with the first solvent, has a surface tension equal to or greater than the surface tension of the first solvent, and in which the semiconducting material has a solubility of less than 0.1 wt % at room temperature The surface tension of the ink formulation can be controlled, allowing the formation of semiconducting layers in organic thin film transistors, including top-gate transistors. | 04-15-2010 |
20100099215 | THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY - A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region. | 04-22-2010 |
20100105161 | Method for Manufacturing Thin Film Transistor - Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern. | 04-29-2010 |
20100112749 | POLYSILAZANE, METHOD OF SYNTHESIZING POLYSILAZANE, COMPOSITION FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE COMPOSITION - Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the composition. The polysilazane is synthesized through a reaction, under a catalyst, between dichlorosilane, trichlorosilane, and ammonia added in a reaction solvent as a reactant. In this instance, a polystyrene conversion weight average molecular weight of the polysilazane is about 2,000 to 30,000. | 05-06-2010 |
20100112750 | Post-Processing Treatment of Conductive Polymers to Enhance Electrical Conductivity - A method for enhancing electrical conductivity of a film which includes at least one conductive polymer. The method includes providing the film comprising the at least one conductive polymer and at least one polymer acid, agitating the film in at least one reagent; and, placing the film on a heated surface. The at least one reagent includes a reagent acid that is stronger than the polymer acid. The conductivity of the treated film is significantly greater than the conductivity of the untreated film. | 05-06-2010 |
20100112751 | ORGANIC DIODES AND MATERIALS - Diodes having p-type and n-type regions in contact, having at least one of either the p-type region or n-type region including a conjugated organic material doped with an immobile dopant, conjugated organic materials for incorporation into such diodes, and methods of manufacturing such diodes and materials are provided. | 05-06-2010 |
20100120196 | NANO-ARRAY AND FABRICATION METHOD THEREOF - The invention provides a method for fabricating a nano-array comprising the following steps. A template with a plurality of nano-holes is provided. A polymer is embossed by the template to integrally form a plurality of nano-protrusions thereon, and demolding to reveal the nano-protrusions. The nano-protrusion has a concave or convex top surface. | 05-13-2010 |
20100136739 | Embossing Printing for Fabrication of Organic Field Effect Transistors and its Integrated Devices - A method of fabricating an organic field effect transistor (OFET) includes forming at least one OFET structure by ultraviolet (UV) transfer embossing printing, where, in an example embodiment, the method includes providing ink material on at least part of a patterned surface of a mold, where the mold | 06-03-2010 |
20100136740 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer. | 06-03-2010 |
20100136741 | BRANCHED PHENYLENE-TERMINATED THIOPHENE OLIGOMERS - A composition comprising a plurality of molecules. Each of the molecules has a core comprising at least one aromatic ring and at least three pendant arms chemically bonded to the core. The pendant arms comprise a phenylene-terminated thiophene oligomer. | 06-03-2010 |
20100144085 | SUBSTRATE STRUCTURES AND FABRICATION METHODS THEREOF - Substrate structures and fabrication methods thereof. A substrate structure includes a bendable substrate and an inorganic electrode structure on the bendable structure, wherein the inorganic electrode structure includes a conductive layer or a semiconductor layer. The inorganic electrode structure includes carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The bendable substrate includes polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), or polymethyl methacrylate (PMMA). | 06-10-2010 |
20100144086 | SYNTHESIS OF ACENES AND HYDROXY-ACENES - A method comprising reducing an acenequinone to form an acenepolyhydrodiol by exposing the acenequinone to a reducing environment comprising an alkoxyaluminate. | 06-10-2010 |
20100151621 | METHOD FOR MANUFACTURING AN ORGANIC SEMICONDUCTOR ELEMENT - In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere. | 06-17-2010 |
20100151622 | ORGANIC THIN FILM TRANSISTOR, FLAT PANEL DISPLAY APPARATUS COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR - An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film. | 06-17-2010 |
20100159635 | METHOD OF PATTERNING CONDUCTIVE LAYER AND DEVICES MADE THEREBY - Methods for patterning a conductor through oxidation are provided. Devices fabricated using the method include organic transistors having a gate electrode and dielectric layer patterned by the method, source and drain electrodes, and an organic semiconducting layer. | 06-24-2010 |
20100173450 | MATRIX TYPE DISPLAY DEVICE WITH OPTICAL MATERIAL AT PREDETERMINED POSITIONS AND MANUFACTURING METHOD THEREOF - An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof. | 07-08-2010 |
20100173451 | ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer. | 07-08-2010 |
20100178727 | METHOD OF MANUFACTURING ORGANIC FILM TRANSISTOR - A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point. | 07-15-2010 |
20100178728 | ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim | 07-15-2010 |
20100184252 | METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR - A method for manufacturing an organic thin film transistor having excellent characteristics by a simple process, and an organic thin film transistor are provided. In a manufacture method of an organic thin film transistor element having a gate electrode, a gate insulation layer, an organic semiconductor layer and a source electrode and a drain electrode on a support, the method is characterized by comprising a step for forming an organic semiconductor precursor layer by applying a solution in which an organic semiconductor precursor is dissolved, and a step for forming an organic semiconductor layer by converting the organic semiconductor precursor to an organic semiconductor by exposing the organic semiconductor precursor layer to a discharging gas in a plasma state. | 07-22-2010 |
20100197074 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURE - A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode. | 08-05-2010 |
20100197075 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In view of the problem that an organic semiconductor layer of an organic TFT is likely to deteriorate due to water, light, oxygen, or the like, it is an object of the present invention to simplify a manufacturing step and to provide a method for manufacturing a semiconductor device having an organic TFT with high reliability. According to the invention, a semiconductor layer containing an organic material is formed by patterning using a mask, and thus an organic TFT is completed in the state where the mask is not removed but to remain over the semiconductor layer. In addition, a semiconductor layer can be protected from deterioration due to water, light, oxygen, or the like by using the remaining mask. | 08-05-2010 |
20100210067 | MIGRATION AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques. | 08-19-2010 |
20100227434 | Method of Fabricating a Self-aligned Top-gate Organic Transistor - A method of fabricating a self-aligned top-gate organic transistor comprises depositing a photoresist material over the dielectric material, and exposing the photoresist material to irradiation through the substrate using the source and drain electrodes as a mask. The exposure defines a region for deposition of the gate electrode. | 09-09-2010 |
20100233844 | Method for Preparing Doped Organic Semiconductor Materials and Formulation Utilized Therein - The present invention relates to a method for preparing doped organic semiconductor materials | 09-16-2010 |
20100233845 | Thin Film Applications of Perfluoroisopropyl-Substituted Perfluorophthalocyanines - Perfluoroisopropyl-substituted perfluorophtalocyanines, including zinc (II), copper (II) and oxo-vanadium (IV) complexes of 29H,31H,1,4,8,11,15,18,22,25-octakis-fluoro-2,3,9,10,16,17,23,24-octakis-perfluoro(isopropyl)phthalocyanine (F | 09-16-2010 |
20100233846 | METHOD FOR FORMING SEMICONDUCTOR THIN FILM AND METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE - The present invention provides a method for forming a semiconductor thin film, which is capable of suppressing decrease in mobility due to heating and characteristic deterioration due to the decrease in mobility and which is capable of forming a semiconductor thin film with improved heat resistance by more simple procedures. A solution in which a plurality of types of organic materials including an organic semiconductor material are mixed is applied or printed on a substrate to form a thin film, and the plurality of types of organic materials are phase-separated by a process of drying the thin film. As a result, a layered structure semiconductor thin film is obtained, in which an intermediate layer b composed of an organic insulating material is sandwiched between two semiconductor layers a and a′. | 09-16-2010 |
20100248421 | Method of forming organic thin film and method of manufacturing semiconductor device using the same - Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate coated with an organic semiconductor solution using a method of generating a shearing stress to the portion of the lower substrate coated with the organic semiconductor solution. A guide structure may be formed adjacent to the organic semiconductor solution. | 09-30-2010 |
20100273290 | MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING - In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a gallium nitride layer over the substrate with a thermal chemical-vapor-deposition process within the MOCVD chamber by flowing a first gallium containing precursor and a first nitrogen containing precursor through the showerhead into the MOCVD chamber, removing the one or more substrates from the MOCVD chamber without exposing the one or more substrates to atmosphere, flowing a chlorine gas into the processing chamber to remove contaminants from the showerhead, transferring the one or more substrates into the MOCVD chamber after removing contaminants from the showerhead, and depositing an InGaN layer over the GaN layer with a thermal chemical-vapor-deposition process within the MOCVD chamber is provided. | 10-28-2010 |
20100273291 | DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING - Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber. | 10-28-2010 |
20100273292 | MODIFYING A SURFACE IN A PRINTED TRANSISTOR PROCESS - A method of forming an electronic device includes depositing a dielectric, forming a first functional material layer having a first surface energy, depositing at least one first at least semiconductive feature of the device, forming a second functional material layer to provide a surface having a second surface energy, and depositing at least one second at least semiconductive feature of the device to connect to the first at least semiconductive feature of the device. A method of forming an electronic device includes depositing a first, dielectric material, depositing a second material, depositing at lease one first at least semiconductive feature of the device on the second material, altering the second material to form a altered second material, and depositing at least one at least semiconductive feature from solution to connect the first semiconductive feature of the device. An electronic device has a substrate, a dielectric layer, a first functional layer having a first surface energy, at least one first at least semiconductive feature on the first functional layer, a second functional layer in a region between adjacent to the first at least semiconductive features, and at least one second at least semiconductive feature on the second functional layer. | 10-28-2010 |
20100279460 | ORGANIC THIN FILM TRANSISTOR - To provide an organic thin film transistor including a pair of electrodes for allowing a current to flow through an organic semiconductor layer made of an organic semiconductor material, and a third electrode, wherein the organic semiconductor material is composed mainly of an arylamine polymer having a weight-average molecular weight (Mw) of 20,000 or more. | 11-04-2010 |
20100297808 | MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME - Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C | 11-25-2010 |
20100297809 | ORGANIC TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ORGANIC TRANSISTOR - It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 10 | 11-25-2010 |
20100323473 | METHOD OF FORMING ORGANIC SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR - Disclosed is a method of forming an organic semiconductor layer comprising the steps of preparing a substrate having a groove formed on the surface, applying, to the surface of the substrate, a droplet of an organic semiconductor liquid in which an organic semiconductor material is dissolved or dispersed in a solvent, and drying the droplet to form the organic semiconductor layer, wherein the droplet is applied to a position of the substrate where a part of the circumference of the droplet is introduced into the groove. | 12-23-2010 |
20100330737 | METHOD OF DOPING ORGANIC SEMICONDUCTORS - A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region. | 12-30-2010 |
20110008929 | ALIGNED POLYMERS FOR AN ORGANIC TFT - A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase. | 01-13-2011 |
20110014744 | Organic memory devices and methods of fabricating such devices - Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices. | 01-20-2011 |
20110033971 | ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME - An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density. | 02-10-2011 |
20110033972 | PROGRAMMABLE POLYELECTROLYTE ELECTRICAL SWITCHES - An apparatus includes a first solid electrode on a substrate, a polyelectrolyte layer over a part of the first solid electrode, a second solid electrode on a portion of the polyelectrolyte layer, and an anchoring layer on the part of the first solid electrode. The polyelectrolyte layer is either chemically bonded to the anchoring layer or has a thickness of less than about 20 nanometers. | 02-10-2011 |
20110033973 | DEPOSITION APPARATUS FOR TEMPERATURE SENSITIVE MATERIALS - A system for the deposition of vaporized materials on a substrate is described, comprising at least first and second orientation-independent apparatuses for directing vaporized organic materials onto a substrate surface to form first and second films, each of the first and second orientation-independent apparatuses being arranged in a different relative orientation and comprising: a chamber containing a quantity of material; a permeable member at one end of the chamber with a heating element for vaporizing the material; and means for continuously feeding the material toward the permeable member as it is vaporized, whereby organic material vaporizes at a desired rate-dependent vaporization temperature at the one end of the chamber. A plurality of thin films may be deposited on a substrate using deposition apparatus in a variety of orientations. Such a design provides reduced costs and improved deposition rate control. | 02-10-2011 |
20110053313 | MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE - The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer. | 03-03-2011 |
20110053314 | Method of Fabricating Top Gate Organic Semiconductor Transistors - The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing. | 03-03-2011 |
20110053315 | ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR - An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer. | 03-03-2011 |
20110053316 | Organic Thin Film Transistor With Tunneling Barrier Layer and Method for Manufacturing the Same - An organic thin film transistor includes a buffer layer on a substrate, a source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is in an island shape, a tunneling barrier layer on the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer. | 03-03-2011 |
20110065232 | PRINTING PROCESS FOR ENHANCED JETTED PERFORMANCE OF SEMICONDUCTOR LAYER - Exemplary embodiments provide materials and processes for forming organic semiconductor features by heating a liquid composition containing semiconductor particles into a Newtonian solution for a uniform deposition. | 03-17-2011 |
20110065233 | Method for fabricating and repairing organic thin film - The present invention relates to a method for fabricating an organic thin film transistor, including: (A) providing a gate electrode; (B) forming a gate insulating layer on the gate electrode; and (C) forming an organic active layer, a source electrode and a drain electrode over the gate insulating layer, and increasing crystallinity of the organic active layer by irradiating the organic active layer. Accordingly, through irradiation, the present invention can efficiently enhance the field effect mobility, and thereby significantly improves the device performance of an organic thin film transistor. Additionally, irradiation mentioned in the present invention also can be used for repairing an organic thin film transistor. | 03-17-2011 |
20110065234 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting display device and a method of fabricating the same are provided. The organic light emitting display device includes a substrate, a first electrode formed on the substrate, an inorganic pixel defining layer formed on the first electrode and having an opening exposing at least a portion of the first electrode, an organic layer disposed on the first electrode and having at least an organic emission layer, and a second electrode formed on the organic layer. | 03-17-2011 |
20110076797 | METHOD FOR PRODUCING LOCALIZED PATTERNS - A method for producing at least one pattern on a top surface of a support made from a material presenting a first thermal conductivity comprises a step of arranging of a mask made from a material presenting a second thermal conductivity and comprising at least one recess having a shape corresponding to that of the pattern, in contact with a bottom surface of the support, the ratio of the first conductivity over the second conductivity being greater than or equal to 2, or smaller than or equal to ½, throughout the duration of the method. The method further comprises a step of depositing on the top surface a solution comprising a material designed to form the pattern, and a step of evaporating the solution. | 03-31-2011 |
20110081746 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask. | 04-07-2011 |
20110086467 | Method of fabricating an organic thin film transistor and method of surface treatment for gate insulating layer - A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed. | 04-14-2011 |
20110092015 | Mixed Solvent Systems for Deposition of Organic Semiconductors - Compositions that contain an organic semiconductor dissolved in a solvent mixture are described. More specifically, the solvent mixture includes an alkane having 9 to 16 carbon atoms in an amount equal to 1 to 20 weight percent and an aromatic compound in an amount equal to 80 to 99 weight percent. The semiconductor material is dissolved in the solvent mixture in an amount equal to at least 0.1 weight percent based on a total weight of the composition. Methods of making a semiconductor device using the compositions to form a semiconductor layer are also described. | 04-21-2011 |
20110111552 | Method for forming organic layers of electronic devices by contact printing - A method for forming organic layers of electronic devices by contact printing is disclosed, which comprises: (A) providing a substrate, which has an electrode formed thereon; (B) coating an organic material ink onto a mold; (C) applying the ink-coated mold onto the substrate, to transfer the organic material ink onto the electrode of the substrate and then to form an organic layer; and (D) forming another electrode on the organic layer. In addition, after the step (C) is completed, the steps (B) to (C) can be repeated once or several times to form series of organic layers, if needed. | 05-12-2011 |
20110111553 | ADVANCED CMOS USING SUPER STEEP RETROGRADE WELLS - The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer ( | 05-12-2011 |
20110111554 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING MEMORY DEVICE - Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer. | 05-12-2011 |
20110111555 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer. | 05-12-2011 |
20110117695 | FABRICATION METHOD OF ORGANIC THIN-FILM TRANSISTORS - This invention discloses a fabrication method of organic thin-film transistors (OTFTs) using the micro-contact printing. The OTFT can be of the bottom-gate or top-gate configuration. The micro-contact printing operation of this fabrication method does not require clean-room environment and high processing temperature, and does not have the problem of 2D shrinkage of the printed patterns either. Furthermore, the pre-wetting technique employed in the micro-contact printing results in improved fidelity in the pattern transfer and solves the problems of pairing and cross-talking between neighboring patterns. | 05-19-2011 |
20110151615 | BICYCLIC GUANIDINES, METAL COMPLEXES THEREOF AND THEIR USE IN VAPOR DEPOSITION - Bicyclic guanidine compounds are described. Metal bicyclic guanidinate and its use in vapor deposition processes to deposit a metal-containing thin film are also described. Methods of making alkaline earth metal N,N′dialkylacetamidinates or bicyclic guanidinates including dissolution of alkaline earth metal into liquid ammonia followed by addition of a solution of an amidine or guanidine ligand in the free base from are provided. | 06-23-2011 |
20110171775 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film. | 07-14-2011 |
20110177653 | THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME - Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture. | 07-21-2011 |
20110183462 | METHOD OF MAKING N-TYPE SEMICONDUCTOR DEVICES - An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices. | 07-28-2011 |
20110223714 | NOVEL COMPOUND AND METHOD OF PRODUCING ORGANIC SEMICONDUCTOR DEVICE - A method of producing an organic semiconductor device is provided in which a layer composed of an organic semiconductor having excellent crystallinity and orientation in a low-temperature region can be formed, and the device can be produced in the air. The method includes forming a layer composed of an organic semiconductor precursor on a base body and irradiating the organic semiconductor precursor with light, wherein the organic semiconductor precursor is a porphyrin compound or an azaporphyrin compound having in its molecule at least one of the structure represented by the following general formula (1) or (2): | 09-15-2011 |
20110223715 | THIN FILM TRANSISTOR INCLUDING ORGANIC SEMICONDUCTOR LAYER AND SUBSTRATE INCLUDING THE SAME - Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers. | 09-15-2011 |
20110250719 | Organic Semiconductors - An organic semiconducting compound comprising the structure of formula (I): | 10-13-2011 |
20110269265 | METHODS OF PREPARING SEMICONDUCTIVE COMPOSITIONS AND DEVICES - An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated precursor compound. | 11-03-2011 |
20110281393 | Method of Making an Organic Semiconductor Device - A method of making an organic semiconductor device that comprises providing a surface comprising surface hydroxyl groups; applying an amine to the surface to form a first coated surface; applying a silane compound to the first coated surface to form a second coated surface; exposing the second coated surface to conditions sufficient to chemically react the silane compound with the hydroxyl groups to form a hydrophobic surface; and applying an organic semiconducting material to the hydrophobic surface. | 11-17-2011 |
20110294257 | METHODS OF PROVIDING SEMICONDUCTOR LAYERS FROM AMIC ACID SALTS - A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst. | 12-01-2011 |
20110312125 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred. | 12-22-2011 |
20120003790 | HOLE TRANSPORT COMPOSITIONS AND RELATED DEVICES AMD METHODS (II) - A composition comprising: at least one compound comprising a hole transporting core, wherein the core is covalently bonded to a first arylamine group and also covalently bonded to a second arylamine group different from the first, and wherein the compound is covalently bonded to at least one intractability group, wherein the intractability group is covalently bonded to the hole transporting core, the first arylamine group, the second arylamine group, or a combination thereof, and wherein the compound has a molecular weight of about 5,000 g/mole or less. Blended mixtures of arylamine compounds, including fluorene core compounds, can provide good film formation and stability when coated onto hole injection layers. Solution processing of OLEDs is a particularly important application. | 01-05-2012 |
20120034735 | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns - Example embodiments herein relate to compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantities of both the electroconductive polymer and the photoacid generator. Also disclosed are methods for patterning organic active layers formed using one or more of the compositions to produce organic active patterns, portions of which may be arranged between opposed electrodes to provide organic memory cells. The methods include directly exposing and developing the organic active layer to obtain fine patterns without the use of a separate masking pattern, for example, a photoresist pattern, thereby tending to simplify the fabrication process and reduce the associated costs. | 02-09-2012 |
20120034736 | THIN-FILM TRANSISTORS - A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed. | 02-09-2012 |
20120064663 | DEVICE AND METHOD FOR DEPOSITING ORGANIC MATERIAL - A device for depositing an organic material includes a substrate; a mask having an opening portion and a shield portion; a fixing member for fixing the substrate and the mask to each other; a deposition source comprising a plurality of nozzles arranged in a first direction and configured to spray the organic material; and a plurality of shield plates near the plurality of nozzles on the deposition source. An angle θ between the substrate and a line extended from a distal end of one of the nozzles to a center of a distal end of a corresponding one of the shield plates is greater than or equal to a taper angle Φ of the shield portion of the mask. | 03-15-2012 |
20120077308 | ORGANIC SEMICONDUCTOR COMPOSITIONS INCLUDING PLASTICIZERS - A method includes combining organic semiconductor molecules and plasticizer molecules to form over a substrate a solid organic semiconductor channel. The channel may comprise at least about 50% by weight of the plasticizer molecules. | 03-29-2012 |
20120083069 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 04-05-2012 |
20120083070 | CHARGE INJECTION AND TRANSPORT LAYERS - Compositions for use in hole transporting layers (HTLs) or hole injection layers (HILs) are provided, as well as methods of making the compositions and devices fabricated from the compositions. OLED devices can be made. The compositions comprise at least one conductive conjugated polymer, at least one semiconducting matrix component that is different from the conductive conjugated polymer, and an optional dopant, and are substantially free of an insulating matrix component. | 04-05-2012 |
20120100667 | ORGANIC SEMICONDUCTOR INK COMPOSITION AND METHOD FOR FORMING ORGANIC SEMICONDUCTOR PATTERN USING THE SAME - Provided is an ink that is the most suitable for a method for forming an organic transistor by transferring a pattern using a liquid-repellent transfer substrate, for example, a microcontact printing method or a reverse printing method. Specifically, provided is an organic semiconductor ink composition which can provide a uniform ink coating film on a surface of a liquid-repellent transfer substrate and which can provide a dry ink film or a semi-dry ink film capable of being easily transferred from the transfer substrate to a transfer-receiving base material. Also provided is a method for forming an organic semiconductor pattern of an organic transistor, the method using the organic semiconductor ink composition. The organic semiconductor ink composition used for obtaining a desired pattern by transferring an ink layer formed on a liquid-repellent transfer substrate to a printing base material contains an organic semiconductor, an organic solvent, and a fluorine-based surfactant. | 04-26-2012 |
20120122274 | ANISOTROPIC SEMICONDUCTOR FILM AND METHOD OF PRODUCTION THEREOF - The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid layer of material that comprises predominantly planar graphene-like carbon-based structures and possesses anisotropy of conductivity, and wherein the layer thickness is in a range from approximately 5 nm to 1000 nm. | 05-17-2012 |
20120122275 | METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS - Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments. | 05-17-2012 |
20120129296 | METHOD FOR FORMING AN ORGANIC MATERIAL LAYER ON A SUBSTRATE - A method for forming an organic material layer on a substrate in an in-line deposition system is disclosed. In one aspect, the organic material is deposited with a predetermined non-constant deposition rate profile, which includes a first predetermined deposition rate range provided to deposit at least a first monolayer of the organic material layer with a first predetermined average deposition rate and a second predetermined deposition rate range provided to deposit at least a second monolayer of the organic material layer with a second predetermined average deposition rate. The injection of organic material through the openings of the injector is controlled for realizing the predetermined deposition rate profile. | 05-24-2012 |
20120135562 | METHODS OF FORMING HYDROPHOBIC SILICON DIOXIDE LAYER AND FORMING ORGANIC THIN FILM TRANSISTOR - A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced. | 05-31-2012 |
20120156829 | POLYMERIC SEMICONDUCTORS, DEVICES, AND RELATED METHODS - A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R | 06-21-2012 |
20120171811 | ORGANIC SEMICONDUCTOR COMPOSITIONS WITH NANOPARTICLES - A method of fabricating a circuit includes chemically bonding a coating to a plurality of nanoparticles. The nanoparticles are dispersed in a medium comprising organic molecules. An organic semiconductor channel is formed that comprises the medium. A plurality of electrodes is formed over the substrate. The electrodes are located to function as two of a gate electrode, a drain electrode, and a source electrode of a field-effect transistor. | 07-05-2012 |
20120178208 | ELECTRONIC DEVICE INCLUDING AN ORGANIC ACTIVE LAYER AND PROCESS FOR FORMING THE ELECTRONIC DEVICE - An electronic device can include an organic active layer and an electrode. In one aspect, the electrode can further include a first layer that is conductive, and a second layer that is conductive. The second layer can include a defect extending at least partly through a thickness of the second conductive layer. The electrode can also include a third layer lying within and substantially filling the defect, wherein each of the second and third layers includes a same metallic element. | 07-12-2012 |
20120184065 | METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP - A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications. | 07-19-2012 |
20120220075 | Solution-Processed Organic Electronic Structural Element with Improved Electrode Layer - A solution-processed organic electronic structural element has an improved electrode layer. Located between the active organic layer and the electrode layer there is either an interface or an interlayer containing a cesium salt. | 08-30-2012 |
20120231577 | ANODE FOR AN ORGANIC ELECTRONIC DEVICE - There is provided an anode for an organic electronic device. The anode is a conducting inorganic material having an oxidized surface layer. The surface layer is non-conductive and hole-transporting. | 09-13-2012 |
20120231578 | FABRICATING METHOD OF ORGANIC THIN FILM TRANSISTOR HAVING A HYDROPHOBIC LAYER - A fabricating method of an organic thin film transistor having a hydrophobic layer is provided. The organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof. | 09-13-2012 |
20120258569 | SELECTIVE NANOTUBE FORMATION AND RELATED DEVICES - Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device. | 10-11-2012 |
20120276687 | NICKEL COMPLEXES FOR FLEXIBLE TRANSISTORS AND INVERTERS - The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation. The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L | 11-01-2012 |
20130005076 | THERMAL JET PRINTHEAD - Various aspects of the present teachings relate to film-forming apparatus and techniques wherein OLED film layers are deposited onto a substrate by thermal vaporization of substantially dry film-forming material from a thermal printhead. Embodiments are disclosed of a thermal printhead configured for operation very close to a substrate with reduced heating of the substrate. | 01-03-2013 |
20130005077 | APPARATUS AND METHOD OF MANUFACTURING ORGANIC ELECTRONIC COMPONENT - A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof. | 01-03-2013 |
20130005078 | LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS - A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates. | 01-03-2013 |
20130005079 | ORGANIC THIN FILM TRANSISTORS AND METHODS OF FORMING THE SAME - Provided is an organic thin film transistor, method of forming the same, and a memory device employing the same. The organic thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the substrate between the source electrode and the drain electrode, a gate electrode controlling the active layer, and an organic dielectric layer between the active layer and the gate electrode. The organic dielectric layer includes nanoparticles, a hydrophilic polymer surrounding the nanoparticles, and a hydrophobic polymer. | 01-03-2013 |
20130029455 | METHOD FOR MANUFACTURING TWO ADJACENT AREAS MADE OF DIFFERENT MATERIALS - The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area. | 01-31-2013 |
20130045566 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a conductive layer formed in the junction region and a boundary layer arranged to wrap a side and a bottom of the conductive layer. | 02-21-2013 |
20130065358 | Method for Producing (Electro) Luminescent, Photoactive or Electrically (Semi) Conducting Polymers - The invention concerns the production of poly(arylene-vinylenes) and related polymers whose polymerization is triggered photochemically. For that purpose, the low molecular starting materials are firstly cooled to temperatures which are so low that in fact their activation into mostly chinoid intermediate stages (the “active” monomer) occurs; the thermally induced polymerization, however, either does not occur or barely takes place at all. The polymerization is instead triggered in a separate step by means of electromagnetic radiation of a suitable wavelength—either using the absorption behavior of the low-molecular starting compounds/the monomers, or mediated by means of photoinitiators and/or sensitizers. | 03-14-2013 |
20130065359 | SELECTIVELY ETCHING OF A CARBON NANO TUBES (CNT) POLYMER MATRIX ON A PLASTIC SUBSTRUCTURE - The present invention refers to a method for selectively structuring of a polymer matrix comprising CNT (carbon nano tubes) on a flexible plastic substructure. The method also includes a suitable etching composition, which allows to proceed the method in a mass production. | 03-14-2013 |
20130095605 | LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FORMED THEREFROM, ORGANIC ELECTRONIC DEVICE, ORGANIC THIN-FILM TRANSISTOR AND DISPLAY DEVICE USING THE ORGANIC SEMICONDUCTOR MATERIAL, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and Y each represent a hydrogen atom or a leaving substituent, where one of X and Y is the leaving substituent and the other is the hydrogen atom; Q | 04-18-2013 |
20130122647 | PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS, INDIUM OXIDE-CONTAINING LAYERS PRODUCED BY THE PROCESS AND USE THEREOF - The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR) | 05-16-2013 |
20130122648 | REDUCTION OF THE EFFECTS OF CAP-LIKE PROJECTIONS, DUE TO LASER ABLATION OF A METAL LEVEL BY USING A NON-CROSSLINKED LIGHT OR HEAT-CROSSLINKABLE POLYMER LAYER - A laser-crosslinkable material appearing in non-crosslinked or partially crosslinked form is used to protect, during a laser etching, the electrodes of an organic transistor. | 05-16-2013 |
20130137212 | METHOD OF MANUFACTURING AN ORGANIC THIN FILM TRANSISTOR - There is provided a method of manufacturing an organic thin film transistor. The method includes forming a plurality of barrier ribs on an insulating substrate and forming a plurality of grooves partitioned by the barrier ribs. The method further includes forming a source electrode, a drain electrode, and a gate electrode on the grooves, respectively. The method also includes forming an opening by etching the barrier ribs between the source electrode and the gate electrode and between the gate electrode and the drain electrode. The method further includes forming a gate insulating film on the opening; and forming an organic semiconductor layer on the gate insulating film. | 05-30-2013 |
20130143356 | N-Dopant for Carbon Nanotubes and Graphene - A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: | 06-06-2013 |
20130143357 | METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING APPARATUS, AS WELL AS METHOD OF MANUFACTURING ORGANIC DEVICE - There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve. | 06-06-2013 |
20130149811 | METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR THIN FILM AND MONOCRYASTALLINE ORGANIC SEMICONDUCTOR THIN FILM - The first object of the present invention is to provide a method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The second object of the present invention is to manufacture a monocrystalline organic semiconductor of which almost the entire region consists of a single monocrystal, by printing process. | 06-13-2013 |
20130149812 | LOW CONTACT RESISTANCE ORGANIC THIN FILM TRANSISTORS - The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance. | 06-13-2013 |
20130210192 | Semiconductor Component - The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component. | 08-15-2013 |
20130237008 | METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE - According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film. | 09-12-2013 |
20130267061 | METHOD FOR FABRICATING FLEXIBLE ELECTRICAL DEVICES - A method for fabricating a flexible electrical device is provided. The method includes providing a first substrate, providing a second substrate opposed to the first substrate, wherein one of the first and second substrates includes a polyimide polymer of Formula (I) | 10-10-2013 |
20130273688 | ORGANIC THIN-FILM TRANSISTORS - A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): | 10-17-2013 |
20130273689 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized. | 10-17-2013 |
20130295715 | METHOD FOR ETCHING MICRO-ELECTRICAL FILMS USING A LASER BEAM - A method for etching with a laser beam having a predetermined wavelength an area of a layer of a first material, said area being deposited at the surface of at least two second materials, includes: depositing a layer of a third material on the layer of the first material, the first and the third materials having a chemical affinity on application of the laser beam greater than the chemical affinity during said application between the first material and each of said at least two second materials; and applying the laser beam to an area of a free surface of the layer of third material vertically above the area of the layer of first material with a fluence of said laser beam causing the separation of said area. | 11-07-2013 |
20130295716 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, ORGANIC EL ELEMENT AND ORGANIC EL DISPLAY DEVICE - First and second vapor deposition particles ( | 11-07-2013 |
20130302937 | Film Formation Apparatus, Method for Forming Film, Method for Forming Multilayer Film or Light-Emitting Element, and Method for Cleaning Shadow Mask - The inventors have reached the idea of a film formation apparatus including a film formation chamber, a removal chamber, two sluice valves provided apart from each other between the film formation chamber and the removal chamber, and a shadow mask transfer mechanism. The film formation chamber includes an evaporation source, and the removal chamber includes a parallel plate plasma source and a shadow mask stage. The film formation apparatus has a film formation mode in which a shadow mask overlapped with an object is transferred by the shadow mask transfer mechanism and a film is formed on the object; and a cleaning mode in which the shadow mask is irradiated with plasma by the plasma source, the shadow mask being held between an upper electrode and a lower electrode by the shadow mask stage. | 11-14-2013 |
20130323879 | COATING METHOD, AND METHOD OF FORMING ORGANIC LAYER USING THE SAME - A coating apparatus includes a stage supporting a coating target, a coating part on the stage, the coating part being configured to apply a coating material onto the coating target, and a heating source opposite to and spaced apart from the stage, the heating source being configured to supply heat to the coating target after application of the coating material onto the coating target. | 12-05-2013 |
20130323880 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming material to form a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a pattern of developed priming layer, wherein the pattern of developed priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of developed priming layer on the first layer. The priming material has at least one unit of Formula I | 12-05-2013 |
20130323881 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND ORGANIC EL DISPLAY DEVICE - Vapor deposition particles ( | 12-05-2013 |
20130323882 | VAPOR DEPOSITION PARTICLE EMITTING DEVICE, VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD - A vapor deposition particle injection device ( | 12-05-2013 |
20130330876 | Novel Heterocyclic Compound, Method For Producing Intermediate Therefor, And Use Thereof - Provided are a novel heterocyclic compound represented by formula (1), and a field-effect transistor having a semiconductor layer comprising the aforementioned compound. Also provided is a method for producing an intermediate enabling the production of the aforementioned novel heterocyclic compound. (In the formula, R | 12-12-2013 |
20130337605 | SUBSTRATE PLASMA-PROCESSING APPARATUS - A substrate plasma-processing apparatus for plasma-processing a surface of an electrode of an organic light emitting device. The substrate plasma-processing apparatus may adjust the distance between a first electrode and a substrate and adjust the distance between a second electrode and the substrate. | 12-19-2013 |
20130344648 | HOLE TRANSPORT COMPOSITIONS AND RELATED DEVICES AND METHODS (II) - A composition comprising: at least one compound comprising a hole transporting core, wherein the core is covalently bonded to a first arylamine group and also covalently bonded to a second arylamine group different from the first, and wherein the compound is covalently bonded to at least one intractability group, wherein the intractability group is covalently bonded to the hole transporting core, the first arylamine group, the second arylamine group, or a combination thereof, and wherein the compound has a molecular weight of about 5,000 g/mole or less. Blended mixtures of arylamine compounds, including fluorene core compounds, can provide good film formation and stability when coated onto hole injection layers. Solution processing of OLEDs is a particularly important application. | 12-26-2013 |
20140024171 | PERYLENE TETRACARBOXYLIC ACID BISIMIDE DERIVATIVE, N-TYPE SEMICONDUCTOR, A METHOD FOR PRODUCING N-TYPE SEMICONDUCTOR, AND ELECTRONIC DEVICE - The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, | 01-23-2014 |
20140038348 | ETCHANT COMPOSITION AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR USING THE SAME - An etchant composition includes ammonium persulfate (((NH | 02-06-2014 |
20140038349 | DONER SUBSTRATES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES USING DONOR SUBSTRATES - A donor substrate may include a base layer, a light to heat conversion layer disposed on the base layer, a buffer layer disposed on the light to heat conversion layer, an organic transfer layer disposed on the buffer layer, and a tightening member disposed on a peripheral portion of the organic transfer layer. The tightening member may include an adhesive film having an adhesion strength controlled by an irradiation of an ultraviolet ray. Process failures for manufacturing an organic light emitting display device may be prevented by the donor substrate, so that the organic light emitting display device may ensure improved performances. | 02-06-2014 |
20140038350 | N-Dopant for Carbon Nanotubes and Graphene - A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: | 02-06-2014 |
20140045297 | NANOBALL SOLUTION COATING METHOD AND APPLICATIONS THEREOF - The present invention discloses a nanoball solution coating method and applications thereof. The method comprises steps: using a scraper to coat a nanoball solution on a substrate to attach a plurality of nanoballs on the substrate; flushing or flowing through the substrate with a heated volatile solution to suspend the nanoballs unattached to the substrate in the volatile solution; and using the scraper to scrape off the volatile solution carrying the suspended nanoballs, whereby is simplified the process to coat nanoballs. The method can be used to fabricate nanoporous films, organic vertical transistors, and large-area elements and favors mass production. | 02-13-2014 |
20140045298 | METHOD FOR MANUFACTURING ORGANIC ELECTRONIC COMPONENT HAVING SLAT COMPOUND - A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer. | 02-13-2014 |
20140051207 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - The present invention relates to a substrate for an organic electrode device, a manufacturing method thereof, and an organic electronic device. An exemplary substrate of the invention, if an organic light emitting element is formed on an upper part of the substrate, can obtain luminance with high emission and uniformity by efficiently controlling the surface resistance of an electrode even when the device is configured into larger sizes. | 02-20-2014 |
20140057390 | MULTI-NOZZLE ORGANIC VAPOR JET PRINTING - Systems and methods are provided in which individual elements of a thin patterned film are deposited by two or more nozzles having different geometries. The different nozzle geometries may include one or more of different throttle diameters, different exhaust diameters, different cross-sectional shapes, different bore angles, different wall angles, different exhaust distances from the substrate, and different leading edges relative to the direction of movement of the nozzles or the substrate. Methods may include steps of ejecting a carrier gas and a material from a plurality of nozzles and depositing the material on the substrate in a plurality of laterally spaced elements, each of the elements deposited by a separate nozzle group. At least one of the nozzles in a group of nozzles depositing an element may be configured to deposit the material on the substrate in a width that is smaller than the width of the element. | 02-27-2014 |
20140065765 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF FUNCTIONAL ELEMENT - According to one embodiment, the manufacturing method of a functional element includes filling a solvent comprising hydrogen gas and having organic molecules dispersed therein into a gap between the first electrode and the second electrode formed facing the first electrode, and forming an organic layer containing the organic molecules mentioned above between the first electrode and the second electrode. | 03-06-2014 |
20140093997 | METHOD OF MANUFACTURING AN ORGANIC SEMICONDUCTOR THIN FILM - A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted. | 04-03-2014 |
20140127855 | METHOD FOR THE ORIENTED CRYSTALLIZATION OF MATERIALS - Method for the oriented crystallization of materials. The present invention relates to a method useful for orienting the crystallization of a material over a surface zone of at least one face of a substrate, comprising at least the steps consisting in: i. determining, on said face, the surface over which the crystalline deposit must be formed, referred to as the zone of interest, ii. depositing, on said face and at the periphery of said zone of interest, at least one particle dedicated to forming a crystallization nucleus, iii. bringing said particle into contact with at least said material to be crystallized, iv. exposing at least said point of contact between said particle and said material to be crystallized to conditions favourable to the crystallization of said material, said method being characterized in that the surface of said particle is partly functionalized by at least one group having an affinity for said material to be crystallized, said group possessing at least one unit having a chemical nature identical or similar to at least one portion of the chemical structure of said material to be crystallized, and in that said particle is deposited in step ii. so as to expose said group opposite the face to be crystallized. | 05-08-2014 |
20140141564 | METHOD FOR SURFACE TREATMENT - A method for surface treatment is disclosed which relates to the technical field of producing thin-film devices by printing and solves the problem that the treatment of a substrate surface in the prior art can hardly meet the requirement for printing. The method for surface treatment includes a step of subjecting a surface of a base plate having at least two kinds of substrate patterns formed thereon to a surface treatment for forming a self-assembled monomolecular layer for at least once and a surface treatment by ultraviolet-ozone cleaning, so as to make the difference between the surface energies of the substrate patterns larger or smaller. The method for surface treatment of the invention is suitable for the surface treatment of the substrate surface during producing thin-film devices by printing. | 05-22-2014 |
20140147964 | Shadow Mask, Evaporation Device and Method for Manufacturing Oled Display Panel - The present invention provides a shadow mask, an evaporation device and a related method for manufacturing OLED display panel. The shadow mask has an array of multiple openings. Each opening contains a rectangular first section and a number of second sections at the first section's four corners; and each second section is connected to the first section. By varying the design of the shadow mask, the present invention is able to reduce the ineffective area sizes of the openings, thereby enhancing the aperture ratio of the OLED display panel. | 05-29-2014 |
20140199807 | THIN FILM TRANSISTORS FORMED BY ORGANIC SEMICONDUCTORS USING A HYBRID PATTERNING REGIME - The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process. | 07-17-2014 |
20140199808 | DEPOSITION MASK, PRODUCING METHOD THEREFOR AND FORMING METHOD FOR THIN FILM PATTERN - A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate. | 07-17-2014 |
20140206133 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive. | 07-24-2014 |
20140206134 | LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS - A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates. | 07-24-2014 |
20140206135 | COATING LIQUID FOR GATE INSULATING FILM, GATE INSULATING FILM AND ORGANIC TRANSISTOR - To provide a coating fluid for a gate insulating film, which can be baked at a low temperature of at most 180° C.; a gate insulating film having excellent solvent resistance and further having good characteristics in e.g. specific resistance or semiconductor mobility; and an organic transistor employing the gate insulating film. | 07-24-2014 |
20140235012 | DEPOSITION OF PATTERNED ORGANIC THIN FILMS - Embodiments disclosed herein provide devices having a nozzle die with one or more nozzles, each of which has one or more integrated skimmers. The use of an integrated nozzle/skimmer structure allows for higher-resolution printing in OVJP-type deposition techniques without requiring the use of a shadow mask by allowing for a relatively narrow organic material beam that can be placed at relatively high distances away from the substrate. | 08-21-2014 |
20140235013 | PROCESS OF STRUCTURING AN ACTIVE ORGANIC LAYER DEPOSITED ON A SUBSTRATE - A method of structuring an active organic layer deposited on a substrate, including depositing a sacrificial layer on the substrate by photolithography, the sacrificial layer being made of at least one resist, creating at least one pattern inside of the sacrificial layer, depositing an active organic layer on the sacrificial layer and in the pattern, depositing a protective layer made of organic polymer on the active layer and in the pattern of the resist sacrificial layer, removing the sacrificial layer by projection of a solvent on the resin forming the layer, and removing the protective layer by dissolving the polymer forming it in a solvent. | 08-21-2014 |
20140256085 | METHOD OF MANUFACTURING AN ORGANIC SEMICONDUCTOR THIN FILM - A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted. | 09-11-2014 |
20140273339 | Semiconductor Polymers - Disclosed is a semiconductor polymer having the following structure: | 09-18-2014 |
20140295615 | MULTI-NOZZLE ORGANIC VAPOR JET PRINTING - Systems and methods are provided for depositing thin patterned films of materials in which individual elements of the patterned film are deposited by two or more nozzles having different geometries. The different nozzle geometries may include one or more of different throttle diameters, different exhaust diameters, different cross-sectional shapes, different bore angles, different wall angles, different exhaust distances from the substrate, and different leading edges relative to the direction of movement of the nozzles or the substrate. Methods may include steps of ejecting a carrier gas and a material from a plurality of nozzles and depositing the material on a substrate in a plurality of laterally spaced elements. | 10-02-2014 |
20140302635 | N-DOPING OF ORGANIC SEMICONDUCTORS BY BIS-METALLOSANDWICH COMPOUNDS - The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved. | 10-09-2014 |
20140302636 | METHOD FOR PRODUCING A MULTI-BRANCHED STRUCTURE COMPOUND ENCAPSULATING AN IRIDIUM PHOSPHORESCENT COMPOUND - A method to produce a multi-branched structure compound encapsulating an iridium phosphorescent compound including the following sequential steps: (i) dissolving a multi-branched structure compound and an iridium phosphorescent compound in a first solvent; (ii) adding a second solvent to encapsulate the iridium phosphorescent compound into the multi-branched structure compound; and (iii) separating and purifying the multi-branched structure compound encapsulating the iridium phosphorescent compound. | 10-09-2014 |
20140302637 | POLYMERS BASED ON BENZODIONES - The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (I), and compounds of formula (III), wherein Y, Y | 10-09-2014 |
20140357016 | ORGANIC MOLECULAR FILM FORMING APPARATUS AND ORGANIC MOLECULAR FILM FORMING METHOD - An organic molecular film forming apparatus | 12-04-2014 |
20140363919 | SEMICONDUCTOR DEVICE AND ELECTRONIC UNIT - Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material. | 12-11-2014 |
20140370652 | TETRACENE TETRACARBOXYLIC DIIMIDES AND THEIR PREPARATION - A new family of tetracene tetracarboxylic diimides is provided. These ones can made by reacting a 9-stannafluorene with a tetrabromo compound including a tetracene tetracarboxylic diimide core. They can be used as n-type electron-transporting materials in electronic devices such as n-channel field-effect transistors. They exhibit excellent air-stability and do not cause parasite injections of holes. | 12-18-2014 |
20140377903 | METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT - A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side. | 12-25-2014 |
20150017759 | METHOD FOR PRODUCING MULTIPLE-SURFACE IMPOSITION VAPOR DEPOSITION MASK, MULTIPLE-SURFACE IMPOSITION VAPOR DEPOSITION MASK OBTAINED THEREFROM, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT - A method for producing a multiple-surface imposition vapor deposition mask enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows. In formation of the plurality of masks, after each of the metal masks and a resin film material for producing the resin mask are attached to the frame, the resin film material is processed, and the openings corresponding to the pattern to be produced by vapor deposition are formed in a plurality of rows lengthwise and crosswise, whereby the multiple-surface imposition vapor deposition mask of the above described configuration is produced. | 01-15-2015 |
20150017760 | METHOD FOR MANUFACTURING MOLECULAR MEMORY DEVICE - According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members. | 01-15-2015 |
20150031167 | DEPOSITION APPARATUS, METHOD OF FORMING THIN FILM USING THE DEPOSITION APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE DEPOSITION APPARATUS - A deposition apparatus for performing a deposition process on a substrate includes: an injection unit including a plasma generating member which receives a raw material gas and converts the raw material gas to a deposition source material in a radical form; and a plasma processor disposed adjacent to the injection unit and facing a side of the injection unit, wherein the plasma processor performs a plasma process in a direction facing the substrate. | 01-29-2015 |
20150037928 | VAPOR DEPOSITION MASK, METHOD FOR PRODUCING VAPOR DEPOSITION MASK DEVICE AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT - A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked. | 02-05-2015 |
20150056746 | DIKETOPYRROLOPYRROLE POLYMERS FOR USE IN ORGANIC FIELD EFFECT TRANSISTORS - The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors. | 02-26-2015 |
20150079726 | METHOD OF MANUFACTURING ORGANIC ELECTRONIC DEVICE - Provided is a method of manufacturing an organic electronic device using a pressure-sensitive adhesive film. The method of manufacturing an organic electronic device including an encapsulation layer having excellent moisture barrier property and adhesiveness may be provided. In addition, according to the manufacturing method, for example, though the encapsulation layer is formed on an entire surface of an organic electronic element, a flexibility phenomenon of the organic electronic device may be minimized, and the organic electronic device may be manufactured without damage to the organic electronic element for a short process time. | 03-19-2015 |
20150087109 | Dyketopyrrolopyrrole polymers for use in organic semiconductor devices - The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula *A-D* (I), or a polymer of formula *A-D | 03-26-2015 |
20150111337 | PHENANTHRO[9,10-B]FURAN POLYMERS AND SMALL MOLECULES FOR ELECTRONIC APPLICATIONS - Phenanthro[9,10-b]furan polymers and small molecules for electronic applications. The present invention relates to polymers comprising a repeating unit of the formula (I), (II), (VIII), (IX) and compounds of formula (VIII), or (IX), wherein Y, Y | 04-23-2015 |
20150132886 | DIKETOPYRROLOPYRROLE POLYMERS AND SMALL MOLECULES - The present invention relates to polymers, comprising a repeating unit of the formula (I), and compounds of formula (II), wherein Y, Y | 05-14-2015 |
20150132887 | DITHIENOBENZOFURAN POLYMERS AND SMALL MOLECULES FOR ELECTRONIC APPLICATION - The present invention relates to polymers comprising a repeating unit of the formula (I), and compounds of formula (VIII), or (IX), wherein Y, Y | 05-14-2015 |
20150140728 | METHOD FOR AVOIDING SHORT CIRCUIT OF METAL CIRCUITS IN OLED DISPLAY DEVICE - The present invention relates to a method for avoiding short circuit of metal circuit lines in an OLED display device, including the steps of: forming an inorganic layer on a substrate; forming a patterned metal layer on the inorganic layer, wherein the patterned metal layer includes more than two metal circuit lines; forming a patterned organic layer on the patterned metal layer, wherein the patterned organic layer is provided with an island area at its edge and between every two adjacent metal circuit lines, which has a height lower than that of other periphery areas of the patterned organic layer; forming an ITO layer on the patterned organic layer. In the present invention, an island area with lower height is formed at the edge of the organic layer, such that ITO deposited at the edge of the organic layer is partially deposited on the island area; and ITO on the island area can be completely etched and removed in the later photo etching process, such that ITO remained at the edge of the organic layer is no longer continuous between two adjacent metal circuit lines, thus avoiding short circuit of the two adjacent metal circuit lines due to the remained ITO. | 05-21-2015 |
20150140729 | METHOD OF PATTERNING A BASE LAYER - A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer. The method is capable of providing multilayer articles having almost any shape at high resolution without the need for expensive or damaging mechanical or laser cutting. | 05-21-2015 |
20150303383 | Novel Condensed Polycyclic Aromatic Compound And Use Thereof - The present invention provides a fused aromatic compound represented by general formula (1) or general formula (2): | 10-22-2015 |
20150318476 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer, including the steps:
| 11-05-2015 |
20150333265 | FUNCTIONNALIZED BENZODITHIOPHENE POLYMERS FOR ELECTRONIC APPLICATION - The present invention relates to polymers comprising a repeating unit of the formula (I), and their use as organic semiconductor in organic electronic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention can have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes. | 11-19-2015 |
20150364686 | METHOD FOR FORMING ORGANIC SEMICONDUCTOR FILM - A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 μm and an energy density of from 0.1 to 10 J/cm | 12-17-2015 |
20150372233 | PROCESS FOR FORMING ORGANIC SEMICONDUCTOR FILM - In the present invention, an organic semiconductor film is formed by using a cover member which is disposed on a substrate for forming the organic semiconductor film and forms a space relative to the substrate, filling the space between the cover member and the substrate with a solution, and drying the filled solution, wherein the cover member has a control surface on which an uppermost part most separated from the substrate and a descending part provided on both sides in the y-direction of the uppermost part so as to descend from the uppermost part toward the substrate are formed. | 12-24-2015 |
20150372234 | METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT - In the method for producing an organic semiconductor element having a semiconductor layer according to the present invention, an optical system for irradiating a laser beam with a wavelength of at least 4 μm and a donor substrate prepared by forming an organic semiconductor film on a surface of a supporting member having a laser beam transmittance of at least 50% are used; and the donor substrate and a substrate to be treated serving as a semiconductor element are opposite one another; the laser beam is irradiated from the supporting member side; the laser beam is scanned while modulating in accordance with the semiconductor layer to be formed; and the organic semiconductor film is transferred to the substrate to be treated so as to form the semiconductor layer. | 12-24-2015 |
20150372259 | THERMAL TREATMENT DEVICE FOR DISPLAY APPARATUS AND THERMAL TREATMENT METHOD USING THE SAME - A thermal treatment method for a display apparatus includes providing an acceptor substrate on a substrate stage, providing on the acceptor substrate a pattern mask including a transfer layer, irradiating a flash light beam onto the pattern mask from a plurality of flash lamps, and transferring the transfer layer to the acceptor substrate. The plurality of flash lamps are symmetrically provided with respect to the acceptor substrate and are configured to irradiate flash light beams. | 12-24-2015 |
20160013428 | Novel Condensed Polycyclic Aromatic Compound And Use Thereof | 01-14-2016 |
20160043332 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The invention relates to mononuclear neutral copper(I) complexes with a bidentate ligand which is bonded via nitrogen and two phosphine or arsine ligands, to the use thereof for the production of electronic components, and to electronic devices comprising these complexes. | 02-11-2016 |
20160043351 | METHOD FOR MANUFACTURING HIGH RESOLUTION AMOLED BACKPLANE - The present invention relates to a method for manufacturing a high resolution AMOLED backplane. The method includes: step | 02-11-2016 |
20160047030 | VAPOR DEPOSITION MASK, VAPOR DEPOSITION MASK PREPARATION BODY, METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT - There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. | 02-18-2016 |
20160072065 | DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN-FILM OF ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE DEPOSITION APPARATUS - Provided is a deposition apparatus including a deposition source including a plurality of nozzles that spray a deposition material onto a substrate; a mask disposed between the substrate and the deposition source and separated from the substrate, and including a plurality of first openings through which the deposition material passes; and at least one deposition incident angle adjusting plate disposed between the mask and the deposition source and including a plurality of second openings for adjusting a deposition incident angle of the deposition material that is sprayed from the plurality of nozzles; wherein the at least one deposition incident angle adjusting plate is movable in a first direction toward the substrate or a second direction opposite the first direction, and the deposition incident angle adjusting plate is spaced apart from the nozzles. | 03-10-2016 |
20160072085 | Organic-Inorganic Hybrid Multilayer Gate Dielectrics for Thin Film Transistors - Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories. | 03-10-2016 |
20160079534 | DEPOSITION SOURCE AND ORGANIC LAYER DEPOSITION APPARATUS INCLUDING THE SAME - A deposition source and an organic layer deposition apparatus that may be simply applied to the manufacture of large-sized display apparatuses on a mass scale and may prevent or substantially prevent deposition source nozzles from being blocked during deposition of a deposition material, thereby improving manufacturing yield and deposition efficiency. A deposition source includes a first deposition source including a plurality of first deposition source nozzles, and a second deposition source including a plurality of second deposition source nozzles wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted toward each other. | 03-17-2016 |
20160087220 | TRIPHENYLAMINE DERIVATIVE AND USE THEREFOR - A triphenylamine derivative represented by formula (1) exhibits good solubility in an organic solvent and allows an organic EL element having excellent luminance characteristics to be achieved when formed into a thin film and applied to a positive hole injection layer. | 03-24-2016 |
20160101900 | PACKAGING APPARATUS FOR DEPOSITION MASKS - A packaging apparatus is provided for packaging one or more deposition masks. The apparatus comprises a base comprising a first surface and a first recess; a cover disposed over the base and comprising a second surface facing the first surface and a second recess; a first film placed over the first surface to cover the first recess; a second film placed over the second surface to cover the second recess; and a plurality of insertion sheets interposed between the first film and the second film. The one or more deposition masks comprise a first mask interposed between first and second insertion sheets, the first mask having a width defining a width direction. Each of the first and second insertion sheets comprises a plurality of openings, each extending along the width direction when viewed in a viewing direction perpendicular to the first surface. | 04-14-2016 |
20160104870 | OVJP FOR PRINTING GRADED/STEPPED ORGANIC LAYERS - An emissive layer deposited in graded manner using a plurality of nozzles is disclosed. A mixtures ejected from the plurality of nozzles may contain varying concentrations of host-to-dopant material. The nozzles, as disclosed, may be arranged in a sequential manner such that the order of the sequence is based on varying concentration of the host-to-dopant material. The nozzles may be configured to translate relative to an area of a substrate to allow sequential deposition. | 04-14-2016 |
20160155822 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR OF DISPLAY DEVICE | 06-02-2016 |
20160155944 | VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD, AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT | 06-02-2016 |
20160172589 | ELEMENT MANUFACTURING METHOD AND ELEMENT MANUFACTURING APPARATUS | 06-16-2016 |
20160172609 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | 06-16-2016 |
20160181534 | POLYMERS BASED ON FUSED DIKETOPYRROLOPYRROLES | 06-23-2016 |
20160189964 | SEMICONDUCTOR DEVICE HAVING AREAS WITH DIFFERENT CONDUCTIVITY TYPES AND DIFFERENT DOPING - A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface. | 06-30-2016 |
20160190453 | ELEMENT MANUFACTURING METHOD AND ELEMENT MANUFACTURING APPARATUS - An intermediate product includes a substrate and a plurality of protrusions disposed on the substrate. A lid member with a first surface is set in place for the first surface to be oriented toward the protrusions of the intermediate product. In a lid member pressing step, on the first surface of the lid member, a shape curved to protrude toward the intermediate product is formed and a section of the lid member that is formed with the curved shape is brought into close contact with a part of the intermediate product. | 06-30-2016 |
20160197279 | METHOD FOR APPLYING AN ORGANIC SEMICONDUCTOR LAYER BASED ON EPINDOLIDIONE TO A CARRIER | 07-07-2016 |
20160380031 | MULTIPLE CONDUCTIVE LAYER TFT - A multiple layer pixel architecture for an active matrix display is provided having a common bus line on a metal level separate from that on which the gate electrodes of the thin-film transistors (TFTs) are formed. A multilayer electronic structure includes a TFT for driving a pixel of an active matrix optoelectronic device and a capacitor for storing charge to maintain an electrical state of said active matrix pixel, wherein the structure includes a substrate bearing at least four conducting layers separated by at least three dielectric layers, first and second ones of said conducting layers defining drain/source electrodes and a gate electrode of said transistor respectively, and third and fourth ones of said conducting layers defining respective first and second plates of said capacitor, wherein said capacitor and said transistor are laterally positioned such that they overlap in a vertical direction. | 12-29-2016 |
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