| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 430331000 | Finishing or perfecting composition or product | 18 |
| 20090042149 | Rinsing method and developing method - A rinsing process is performed by supplying a rinsing-liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein. | 02-12-2009 |
| 20090208887 | REMOVING SOLUTION FOR PHOTOSENSITIVE COMPOSITION - A removing solution for photosensitive composition for removal of pigment-containing photosensitive compositions, comprising an alicyclic ketone, an alkylene glycol monoalkyl ether and/or alcohol, and optionally an acetic acid ester. The removing solution has excellent photosensitive composition removing performance. | 08-20-2009 |
| 20100028817 | Solution for treatment of resist substrate after development processing and method for treatment of resist substrate using the same - The present invention provides a resist substrate-treating solution for improving defects on a developed pattern surface, and also provides a resist substrate treatment method employing the treating solution. The resist substrate-treating solution comprises a solvent and a nitrogen-containing or oxygen-containing water-soluble polymer such as a polyamine, a polyol or a polyether. In the treatment method, a developed resist pattern is treated with the resist substrate-treating solution and then washed with pure water. | 02-04-2010 |
| 20100075263 | Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent - It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices. | 03-25-2010 |
| 20100086882 | POSITIVE RESIST PROCESSING LIQUID COMPOSITION AND LIQUID DEVELOPER - Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). | 04-08-2010 |
| 20100173251 | PHOTORESIST RESIDUE REMOVAL COMPOSITION - A photoresist residue removal composition is provided. The photoresist residue removal composition essentially contains glycolic and water, to which a pH control agent and/or a cleanability improver is selectively added. The photoresist residue removal composition has a high capability to remove residues caused by plasma etching and ashing of a metal or silicon oxide layer under a photoresist pattern, does not cause corrosion, and is eco-friendly | 07-08-2010 |
| 20110159447 | DEVELOPING SOLUTION FOR PHOTOLITHOGRAPHY, METHOD FOR FORMING RESIST PATTERN, AND METHOD AND APPARATUS FOR PRODUCING DEVELOPING SOLUTION FOR PHOTOLITHOGRAPHY - Firstly, to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. Secondary, to provide a method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The present invention is firstly a developing solution for photolithography comprising tetrabutylammonium hydroxide (A), and at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3). The present invention is secondary characterized by maintaining the temperature of liquid at 27° C. or higher during dilution. | 06-30-2011 |
| 20110165523 | SUBSTRATE TREATING SOLUTION AND METHOD EMPLOYING THE SAME FOR TREATING A RESIST SUBSTRATE - The present invention provides a resist substrate treating solution and a method employing the solution for treating a resist substrate. This treating solution enables to remove efficiently resist residues remaining on a surface of the resist substrate after development, and further to miniaturize a resist pattern. The solution is used for treating a resist substrate having a developed photoresist pattern, and comprises a solvent incapable of dissolving the photoresist pattern and a polymer soluble in the solvent. The developed resist substrate is brought into contact with the treating solution, and then washed with a rinse solution such as water to remove efficiently resist residues remaining on the resist substrate surface. The solvent and the polymer are preferably water and a water-soluble polymer, respectively. | 07-07-2011 |
| 20120196231 | Polymer Washout Solvent, and the Use Thereof for Developing a Flexographic Printing Plate - A polymer washout solvent for developing a flexographic printing plate comprising:-an ester hydrocarbon component,-an ether hydrocarbon component,-an alcoholic hydrocarbon component. The washout solvent of the invention has less hazardous properties than the known solvents. Use of a polymer washout solvent for developing a flexographic printing plate in a washing step. | 08-02-2012 |
| 20120219919 | Composition for Coating over a Photoresist Pattern Comprising a Lactam - The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure ( | 08-30-2012 |
| 20130244186 | Composition And Method For Removing Photoresist And Bottom Anti-Reflective Coating For A Semiconductor Substrate - A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent. | 09-19-2013 |
| 20140178825 | DEVELOPER - A developer includes an organic solvent and a nitrogen-containing compound. The developer is configured to develop a resist film to form a negative resist pattern. The resist film is formed using a photoresist composition. The photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer includes a structural unit including an acid-labile group. | 06-26-2014 |
| 20140329184 | STABILIZED CHOLINE SOLUTIONS AND METHODS FOR PREPARING THE SAME - A method for the stabilization of an aqueous choline hydroxide solution includes, optionally adding a first stabilizer of a dithionite salt and/or a dialkylhydroxylamine to an aqueous solution containing reactants that will produce an aqueous choline hydroxide solution; and after the aqueous choline hydroxide solution is formed, adding a second stabilizer which comprises a dialkylhydroxylamine to the aqueous choline hydroxide solution. The stabilized choline hydroxide solution may include choline hydroxide, water, and a dialkylhydroxylamine and optionally a dithionite salt as a stabilizer present in an amount of from about 50 ppm to less than about 5000 ppm by weight relative to the total weight of the stabilized choline hydroxide solution. | 11-06-2014 |
| 20150293454 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD - Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer. | 10-15-2015 |
| 20150338741 | SILVER HALIDE DEVELOPING SOLUTION - A black-and-white silver halide developing solution and a silver halide solution physical developing solution are used in sequence to provide electrically-conductive film elements from conductive film element precursors that contain photosensitive silver halide emulsions on one or both supporting sides of a transparent substrate. The two developing solutions have unique combinations of developing agents and other essential components to provide complete development of imagewise exposed silver halide to form highly electrically-conductive silver metal in predetermined patterns. | 11-26-2015 |
| 20150338742 | SILVER HALIDE SOLUTION PHYSICAL DEVELOPING SOLUTION - A black-and-white silver halide developing solution and a silver halide solution physical developing solution are used in sequence to provide electrically-conductive film elements from conductive film element precursors that contain photosensitive silver halide emulsions on one or both supporting sides of a transparent substrate. The two developing solutions have unique combinations of developing agents and other essential components to provide complete development of imagewise exposed silver halide to form highly electrically-conductive silver metal in predetermined patterns. | 11-26-2015 |
| 20150338744 | PATTERN FORMING PROCESS AND SHRINK AGENT - A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having a tertiary amino group in a C | 11-26-2015 |
| 20150370171 | SURFACTANTS AND METHODS OF MAKING AND USING SAME - Anionic surfactants have a formula: R | 12-24-2015 |
