Class / Patent application number | Description | Number of patent applications / Date published |
430329000 | Removal of imaged layers | 7 |
20080241766 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - To overcome the limitations to development of photosensitive layers in a lithography process using a light source such as KrF, ArF, VUV, EUV, E-beam, ion beam, etc., and a patterning process of a large circuit board or a bending substrate, the invention provides a method for manufacturing a semiconductor device in which the photosensitive layer comprises a thermal acid generator that is reacted with heat to form an acid, and a masking process in a lithography process using a light source is performed as a heat conduction process using a thermally conductive pattern so that a patterning process is performed easily without limiting the size and shape of a semiconductor substrate. | 10-02-2008 |
20080280235 | Non-Aqueous Photoresist Stripper That Inhibits Galvanic Corrosion - Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous, non-corrosive cleaning compositions that resist galvanic corrosion when used on stacked layer structures of different types of metals at a surface of an electronic device. Such non-aqueous photoresist strippers and cleaning compositions comprise: (a) at least one polar organic solvent, (b) at least one di or polyamine having both at least one primary amine group and one or more secondary and/or tertiary amine groups, and having the formula wherein R | 11-13-2008 |
20080286701 | METHOD FOR KINETICALLY CONTROLLED ETCHING OF COPPER - An etching composition, particularly for kinetically controlled etching of copper and copper alloy surfaces; a process for etching copper and copper alloys, particularly for etching at high rates to provide uniform and smooth, isotropic surfaces; an etched copper or copper alloy surface obtained by the process; and a process for generating copper or copper alloy electrical interconnects or contact pads. The etching composition and etching processes provide a smooth, isotropic fast etch of copper and copper alloys for semiconductor fabrication and packaging. | 11-20-2008 |
20110200951 | METHOD FOR REMOVING PHOTORESIST PATTERN - Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern. | 08-18-2011 |
20120077132 | PROCESSESS AND COMPOSITIONS FOR REMOVING SUBSTANCES FROM SUBSTRATES - Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices. | 03-29-2012 |
20130273479 | PROCESSESS AND COMPOSITIONS FOR REMOVING SUBSTANCES FROM SUBSTRATES - Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices. | 10-17-2013 |
20150355551 | SYSTEMS FOR REMOVING PHOTORESISTS AND METHODS OF REMOVING PHOTORESISTS USING THE SAME - A system for removing a photoresist includes a solution storage configured to store a preliminary photoresist removal solution, a solution activation unit configured to convert the preliminary photoresist removal solution from the solution storage into an activated photoresist removal solution, and a photoresist removal unit configured to receive the activated photoresist removal solution from the solution activation unit, and configured to load a substrate including a photoresist pattern formed thereon. | 12-10-2015 |