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Carbon or carbide coating

Subclass of:

427 - Coating processes

427248100 - COATING BY VAPOR, GAS, OR SMOKE

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Class / Patent application numberDescriptionNumber of patent applications / Date published
427249200 Chemical vapor infiltration (i.e., CVI) of porous base (e.g., fiber, fibrous web, etc.) 10
427249150 Silicon and carbon containing coating (e.g., silicon carbide, etc.) 10
427249170 Metal carbide containing coating 8
427249800 Diamond coating 6
427249600 Graphite coating 5
20110143034METHOD FOR DEPOSITING GRAPHENE FILM - Provided is a method of depositing a graphene film. In the method includes supplying a gaseous-phase graphene source to a substrate, forming an adsorbed layer on the substrate by the graphene source, and activating the adsorbed layer by heating the adsorbed layer. Therefore, a uniform graphene film having a large area can be formed.06-16-2011
20140170317CHEMICAL VAPOR DEPOSITION OF GRAPHENE USING A SOLID CARBON SOURCE - Aspects of the invention are directed to a method of forming a film on a substrate. The substrate and a solid carbon source are placed into a reactor. Subsequently, both the substrate and the solid carbon source are heated. Optionally, one or more process gases may be introduced into the reactor to help drive the formation of the film. The film comprises graphene.06-19-2014
20140272137Method for Growth of Vertically Aligned Carbon Nanotubes on Diamond Substrates - Method of growing carbon nanotubes which are substantially vertically aligned on a diamond-based substrate via a chemical vapor deposition system utilizing an iron-based catalyst is disclosed.09-18-2014
20140295080Board and Method for Growing High-Quality Graphene Layer - This invention relates to a board and method for forming a graphene layer, and more particularly, to a board for use in forming a graphene layer, which has a structure able to improve properties of the graphene layer formed thereon, and to a method of forming a high-quality graphene layer using the same. The board of the invention includes a board layer, a metal catalyst layer formed on the board layer and functioning as a catalyst for forming the graphene layer, and a stress reduction layer disposed between the board layer and the metal catalyst layer so as to reduce stress of the metal catalyst layer, wherein the stress reduction layer able to reduce stress of the metal thin film is provided, thus improving crystallinity and surface roughness of the metal thin film, thereby effectively forming a high-quality graphene layer.10-02-2014
20150140211Scalable 2D-Film CVD Synthesis - This patent relates to 1) primary tool designs for a chemical vapor deposition (CVD) synthesis system in the form of open tray stacks or more readily accessible, quasi-gas-tight enclosure boxes, to 2) system designs for low volume and high volume CVD graphene production, and to 3) methods for CVD graphene and other two-dimensional (2D) film CVD synthesis. Scaling of higher quality CVD 2D-film production is thereby enabled both in substrate size and productivity and at reduced costs. This invention provides a wider process window for CVD Synthesis of 2D films and, particularly of graphene films, thereby allowing increased film quality and/or production throughput.05-21-2015
427249300 Fiber or fibrous web or sheet base (e.g., strand, filament, fabric, cloth, etc.) 3
20100255197Three-Dimensional Carbon Fibers and Method and Apparatus for their Production - This invention relates to novel three-dimensional (3D) carbon fibers which are original (or primary) carbon fibers (OCF) with secondary carbon filaments (SCF) grown thereon, and, if desired, tertiary carbon filaments (TCF) are grown from the surface of SCF forming a filamentous carbon network with high surface area. The methods and apparatus are provided for growing SCF on the OCF by thermal decomposition of carbonaceous gases (CG) over the hot surface of the OCF without use of metal-based catalysts. The thickness and length of SCF can be controlled by varying operational conditions of the process, e.g., the nature of CG, temperature, residence time, etc. The optional activation step enables one to produce 3D activated carbon fibers with high surface area. The method and apparatus are provided for growing TCF on the SCF by thermal decomposition of carbonaceous gases over the hot surface of the SCF using metal catalyst particles.10-07-2010
20090047428METHOD FOR MANUFACTURING CARBON FIBROUS STRUCTURES - Disclosed is a method for manufacturing carbon fibrous structures each of which comprises a three dimensional network of carbon fibers, which is characterized in that, in the procedure of carbon fiber vapor phase deposition utilizing decomposition of organic carbon compound, at least two kinds of organic carbon compounds as carbon sources are in existence at least at predetermined thermal decomposition reaction temperature range in a reaction furnace and partial pressures of gases of these compounds are regulated so that these compounds are decomposed at mutually different decomposition temperatures, and/or a raw material gas supplied into the reaction furnace is forced to form a turbulent flow. It is possible to obtain efficiently the carbon fibrous structures each of which comprises a three dimensional network of carbon fibers and which are suitable as additives to be added to solid materials, such as resin, ceramics, metal, etc., to improve physical properties, such as electric, mechanical, or thermal properties, of the solid materials, and also as additives to be added to liquid materials, such as fuels, lubricant oils, and etc., to improve physical properties, such as thermal property, of the liquid materials.02-19-2009
20160250660ASSEMBLY AND METHOD FOR TRANSFER MOLDING09-01-2016
427249500 Boron and carbon containing coating (e.g., boron carbide, etc.) 2
20140023784METHOD FOR DEPOSITION OF CONFORMAL FILMS WITH CATALYSIS ASSISTED LOW TEMPERATURE CVD - A method for depositing a film in a substrate processing system includes arranging a substrate on a pedestal in a processing chamber, heating the substrate to a temperature within a predetermined temperature range, and supplying a gas mixture to the processing chamber for a predetermined period to deposit the film on the substrate, wherein the gas mixture includes a first precursor gas, ammonia gas and diborane gas.01-23-2014
20150044367Method for Forming Monolayer Graphene-Boron Nitride Heterostructures - A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.02-12-2015
427249700 Diamond-like carbon coating (i.e., DLC) 1
20100221425Textured Coating on a Component Surface - The present disclosure is directed to a method of making a textured coating on a wear surface of a component. The method includes applying a mask on the surface and depositing a tribological coating on the surface. The method further includes removing the mask.09-02-2010
Entries
DocumentTitleDate
20080206463CONTINUOUS GROWTH OF SINGLE-WALL CARBON NANOTUBES USING CHEMICAL VAPOR DEPOSITION - The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.08-28-2008
20080233286Method and apparatus for removing carbonized pitch from the surface of a pitch infiltrated disk - A device for removing carbonized pitch from first and second parallel surfaces (09-25-2008
20080274277Continuous process for producing carbon nanotubes - The present invention relates to a continuous process for producing carbon nanotubes (herein after also referred to as “CNT11-06-2008
20080299307METHODS OF MAKING CARBON NANOTUBE FILMS, LAYERS, FABRICS, RIBBONS, ELEMENTS AND ARTICLES - Methods of Making Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density.12-04-2008
20080299308Method for making branched carbon nanotubes - A method for making a branched carbon nanotube structure includes steps, as follows: providing a substrate and forming a buffer layer on a surface of the substrate; depositing a catalyst layer on the surface of the buffer layer; putting the substrate into a reactive device; and forming the branched carbon nanotubes on the surface of the buffer layer and along the surface of the buffer layer by a chemical vapor deposition method. The material of the catalyst layer is non-wetting with the material of the buffer layer at a temperature that the branched carbon nanotube are formed. A yield of the branched carbon nanotubes in the structure can reach about 50%.12-04-2008
20090061085Expedited manufacture of carbon-carbon composite brake discs - Method of manufacturing carbon-carbon composite brake disc by: (a) providing textile-based preform in shape of annular brake disc, the preform having a volume 30% or more greater than the volume of the brake disc to be manufactured; (b) subjecting the preform to a first CVD processing for not more than 7.5 days to density it to not more than 1.0 g/cc; (c) machining the densified preform to a shape having a volume no more than 15% greater than the volume of the carbon-carbon composite brake disc to be manufactured: and (d) subjecting the preform to one or two additional cycles of CVD processing, to further densify it to a density of more than 1.7 g/cc. The preform is then machined to provide the carbon-carbon composite brake disc. The total CVD processing time in steps (b) and (c) is no longer than about 32.5 days.03-05-2009
20090186154METHOD OF FORMING A DIFFUSION BONDING ENHANCED LAYER ON AL2O3 CERAMIC TOOLS - The present invention relates to ceramic cutting tools, such as, an aluminum oxide with zirconium oxide ceramic cutting tool with diffusion bonding enhanced layer and CVD coatings, particularly useful for machining modern metal materials. The method comprises a chemical reaction with a mixture including nitrogen and aluminum chloride introduced to form a diffusion bonding enhanced layer between the ceramic substrate and the CVD coatings. Thus formed diffusion bonding enhanced layer is highly adherent to the aluminum oxide with zirconium oxide ceramic substrate and significantly enhances the CVD coating properties, thus improving the machining performance in terms of the tool life of zirconium-based aluminum oxide with zirconium oxide ceramic cutting tools.07-23-2009
20100047449PROCESS FOR DEPOSITION OF NON-OXIDE CERAMIC COATINGS - A method for depositing a non-oxide ceramic-type coating based on chrome carbides, nitrides or carbonitrides, by DLI-CVD at low temperature and atmospheric pressure on a metallic substrate, includes: a) a solution is prepared, containing a molecular compound which is a precursor of the metal to be deposited, belongs to the bis(arene) family, and has a decomposition temperature of 300° C.-550° C., the compound being dissolved in an oxygen atom depleted solvent; b) the solution is introduced as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature; and c) the precursor and the vaporized solvent are driven from the evaporator towards a CVD reactor having cold walls, with a susceptor carrying the substrate to be covered and heated to a temperature higher than the decomposition temperature of the precursor, to a maximum of 550° C., the evaporator and the CVD reactor being at atmospheric pressure.02-25-2010
20100062157MANUFACTURING APPARATUS AND MANUFACTURING METHOD FOR ALINED CARBON NANOTUBES - An apparatus (CVD apparatus (03-11-2010
20100086682Process and apparatus utilizing mixed ligand organometallic catalysts for in situ growth of high purity, low defect density carbon nanotubes - The present invention relates to a simple method for the synthesis of fullerenes using a mixture of liquid metallorganic precursors and liquid organic hydrocarbon solvents wherein the mixture is injected in the form of droplets into a multiple heated zone reactor tube in which the droplets are thermally decomposed and fullerenes are formed. The process is useful for the formation of all types of fullerenes, and in particular yields multi-walled carbon nanotubes (MWNTs) with low defect density and controllable wt % of metal impurity atoms. In particular, a method is disclosed that produces as-grown MWNTs with less than 5 wt % metal impurity atoms. Large classes of metallorganic precursors suitable for use in the process are also identified.04-08-2010
20100129549MATERIAL FOR GROWTH OF CARBON NANOTUBES - Systems and methods for creating carbon nanotubes are disclosed that comprise a growing a nanotube on a tri-layer material. This tri-layer material may comprise a catalyst and at least one layer of Ti. This tri-layer material may be exposed to a technique that is used to grow a nanotube on a material such as a deposition technique.05-27-2010
20100196600APPARATUS AND METHOD FOR PRODUCING ALIGNED CARBON-NANOTUBE AGGREGATES - An apparatus of the present invention for producing an aligned carbon-nanotube aggregate is an apparatus for producing an aligned carbon-nanotube aggregate by synthesizing the aligned carbon-nanotube aggregate on a base material having a catalyst on a surface thereof, the apparatus including: a formation unit that processes a formation step of causing an environment surrounding the catalyst to be an environment of a reducing gas and heating at least either the catalyst or the reducing gas; a growth unit that processes a growth step of synthesizing the aligned carbon-nanotube aggregate by causing the environment surrounding the catalyst to be an environment of a raw material gas and by heating at least either the catalyst or the raw material gas; and a transfer unit that transfers the base material at least from the formation unit to the growth unit. Thus provided is a production apparatus and a production method that are capable of improving efficiency in the production of aligned CNT aggregates by preventing a decrease in production volume and deterioration in quality of aligned CNT aggregates in serial production and by making it easy to increase the size of the apparatus.08-05-2010
20100209608FILM FORMATION METHOD, DIE, AND METHOD OF MANUFACTURING THE SAME - An objective is to provide a film formation method with which a layer having reduced defects, a die obtained by the film formation method, and a method of manufacturing the die. Free carbons increase in the case of reducing hydrogen gas as a carrier gas, so that concave portions are generated and increased during the molding transfer surface process. It was commonly known that hydrogen gas employed for the thermal CVD was set to 2 moles, but it was found out that generation of concave portions was possible to be largely inhibited by setting hydrogen gas to at least 3 moles. However, a level of up to 8 moles is preferable in view of practical use, since dilution of the total raw material gas causes a decline of reaction speed in the case of too much increase of hydrogen gas, resulting in the low speed of film formation.08-19-2010
20100221424LOW TEMPERATURE CNT GROWTH USING GAS-PREHEAT METHOD - A method for synthesizing carbon nanotubes (CNT) comprises the steps of providing a growth chamber, the growth chamber being heated to a first temperature sufficiently high to facilitate a growth of carbon nanotubes; and passing a substrate through the growth chamber; and introducing a feed gas into the growth chamber pre-heated to a second temperature sufficient to dissociate at least some of the feed gas into at least free carbon radicals to thereby initiate formation of carbon nanotubes onto the substrate.09-02-2010
20100227058Method for fabricating carbon nanotube array - A method for fabricating a super-aligned carbon nanotube array includes the following steps: (09-09-2010
20100233366APPARATUS AND METHOD OF PRODUCING VAPOR-GROWN CARBON STRUCTURE - An apparatus and a method of producing a vapor-grown carbon structure capable of obtaining a vapor-grown carbon structure with a markedly low production cost are provided.09-16-2010
20100260933APPARATUS AND METHOD FOR THE PRODUCTION OF CARBON NANOTUBES ON A CONTINUOUSLY MOVING SUBSTRATE - An apparatus having at least one carbon nanotube growth zone having a substrate inlet sized to allow a spoolable length substrate to pass therethrough. The apparatus also has at least one heater in thermal communication with the carbon nanotube growth zone. The apparatus has at least one feed gas inlet in fluid communication with the carbon nanotube growth zone. The apparatus is open to the atmosphere during operation.10-14-2010
20100272891APPARATUS AND METHOD FOR THE PRODUCTION OF CARBON NANOTUBES ON A CONTINUOUSLY MOVING SUBSTRATE - An apparatus having at least one carbon nanotube growth zone having a substrate inlet sized to allow a spoolable length substrate to pass therethrough. The apparatus also has at least one heater in thermal communication with the carbon nanotube growth zone. The apparatus has at least one feed gas inlet in fluid communication with the carbon nanotube growth zone. The apparatus is open to an atmospheric environment during operation.10-28-2010
20100279009PROCESS FOR THE CONTINUOUS PRODUCTION OF ALIGNED CARBON NANOTUBES - Novel methods and apparatus for continuous production of aligned carbon nanotubes are disclosed. In one aspect, the method comprises dispersion of a metal catalyst in a liquid hydrocarbon to form a feed solution, and volatilizing the feed solution in a reactor through which a substrate is continuously passed to allow growth of nanotubes thereon. In another aspect, the apparatus comprises a reactor, a tube-within-a-tube injector, and a conveyor for passing a substrate through the reactor. The present invention further discloses a method for restricting the external diameter of carbon nanotubes produced thereby comprising passing the feed solution through injector tubing of a specified diameter, followed by passing the feed solution through an inert, porous medium. The method and apparatus of this invention provide a means for producing aligned carbon nanotubes having a defined external diameter, suitable for large scale production in an industrial setting.11-04-2010
20100279010METHOD AND SYSTEM FOR CLOSE PROXIMITY CATALYSIS FOR CARBON NANOTUBE SYNTHESIS - A method for carbon nanotube synthesis can include providing in a growth chamber, a substrate in close proximity with a surface of a first plate having a catalyst. The method can also include heating the growth chamber to a temperature sufficient to cause transfer of catalytic particles from the first plate to the substrate. The method can also include growing carbon nanotubes on the substrate by directing feed gas to the substrate.11-04-2010
20100291297METHOD FOR FORMING CATALYST LAYER FOR CARBON NANOSTRUCTURE GROWTH, LIQUID FOR CATALYST LAYER FORMATION, AND PROCESS FOR... - This invention provides a method for forming a catalyst layer for carbon nanostructure growth, which can eliminate the influence of water in a liquid for catalyst layer formation, can grow homogeneous and highly oriented carbon nanostructures over the whole area of a substrate and can realize mass production of the carbon nanostructures, and a liquid for catalyst layer formation for use in the method, and a process for producing carbon nanostructures using the catalyst layer formed by the method. The catalyst layer for use in the production of CNTs is formed by preparing a catalyst metal salt solution of a catalyst metal-containing metal compound (a catalyst metal salt) dispersed or dissolved in a solvent having an ample wettability towards the substrate and coating the catalyst metal salt solution onto the substrate to a form a thin film. The thin film is then heat treated to form a catalyst layer. The substrate with the dried catalyst layer formed thereon is introduced into a carbon nanostructure synthetic device, and CNTs are grown by a thermal CVD method.11-18-2010
20110091646Orifice chemical vapor deposition reactor - The orifice chemical vapor deposition reactor provides controlled and regulated reaction gas and vapor flow in order to produce high yields of carbon nanotubes with relatively high purity. The reactor includes a first reaction chamber having an inlet and an outlet, with an input gas being injected therein. A catalyst boat is received within the first reaction chamber for receiving a volume of reaction catalyst. A second reaction chamber is provided, having an inlet and an outlet. The inlet thereof is in fluid communication with the outlet of the first reaction chamber. A flow-regulating member is positioned within the second reaction chamber adjacent the inlet thereof, with the flow-regulating member having an orifice formed therethrough for regulating gas flow. At least one product boat is received within the second reaction chamber for receiving at least one substrate upon which carbon nanotubes are formed.04-21-2011
20110091647GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION - Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.04-21-2011
20110189394METHOD FOR FORMING CARBON NANOTUBE - In order to form carbon nanotubes on a conductor covering a portion of a substrate in a short heating time, a mesh-like conductive member (08-04-2011
20110223333METHOD OF TREATING CATALYST FOR NANOCARBON PRODUCTION AND METHOD OF MANUFACTURING NANOCARBON - According to one embodiment, a method of treating catalyst for nanocarbon production comprises, bringing a surface of a catalytic material into contact with a chemical, the catalytic material containing a metallic material and being used to produce nanocarbon, corroding the surface of the catalytic material, and drying the surface of the catalytic material.09-15-2011
20110311724PROVIDING GAS FOR USE IN FORMING A CARBON NANOMATERIAL - In a Chemical Vapour Deposition (CVD) process for forming carbon nanomaterials, a supply of acetylene gas is filtered by a filter to remove a volatile hydrocarbon gas before the acetylene gas is provided to a mass flow controller. The mass flow controller can mix the filtered acetylene gas with a supply of the volatile hydrocarbon gas so that a gas mixture has a selected proportion of the volatile hydrocarbon gas. The filter performs the filtering by passing the acetylene gas over active carbon.12-22-2011
20110318487SUBSTRATE FOR PRODUCING ALIGNED CARBON NANOTUBE AGGREGATES AND METHOD FOR PRODUCING THE ALIGNED CARBON NANOTUBE AGGREGATES - A substrate of the present invention for producing aligned carbon nanotube aggregates on a surface thereof is a substrate for producing aligned carbon nanotube aggregates on a surface thereof, the substrate for producing aligned carbon nanotube aggregates including: a metal base substrate; and carburizing prevention layers formed on both front and back surfaces of the metal base substrate, respectively.12-29-2011
20120064246GROWTH AND APPLICATIONS OF ULTRALONG CARBON NANOTUBES - Ultralong carbon nanotubes can be formed by placing a secondary chamber within a reactor chamber to restrict a flow to provide a laminar flow. Inner shells can be successively extracted from multi-walled carbon nanotubes (MWNTs) such as by applying a lateral force to an elongated tubular sidewall at a location between its two ends. The extracted shells can have varying electrical and mechanical properties that can be used to create useful materials, electrical devices, and mechanical devices.03-15-2012
20120128880CARBON NANOTUBE GROWTH ON METALLIC SUBSTRATE USING VAPOR PHASE CATALYST DELIVERY - A chemical vapor deposition (CVD) method using a vapor phase catalyst of directly growing aligned carbon nanotubes on a metal surfaces. The method allows for fabrication of carbon nanotube containing structures that exhibit a robust carbon nanotube metal junction without a pre-growth application of solid catalytic materials to the metal surface or the use of solder or adhesives in a multi-step fabrication process.05-24-2012
20120231163APPARATUS AND METHOD FOR PRODUCING CARBON - A method and an apparatus for efficiently producing a high-purity CNT assembly of a high specific surface area are provided in which a feedstock gas is contacted to a catalyst in an optimum form for CNT growth.09-13-2012
20120237680METHOD FOR ELABORATING CARBON NANOTUBES ON A SUBSTRATE - A method for elaborating carbon nanotubes on a substrate is provided. The method may comprise a step for growing on the substrate the nanotubes by chemical vapor deposition by having a stream comprising a carbon source, a precursor source of an oxide compound and, optionally a catalyst source, pass over the substrate.09-20-2012
20120321785Methods of Making Spatially Aligned Nanotubes and Nanotube Arrays - The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.12-20-2012
20130071565Apparatuses and Methods for Large-Scale Production of Hybrid Fibers Containing Carbon Nanostructures and Related Materials - An apparatus for growing carbon nanostructures (CNSs) on a substrate can include at least two CNS growth zones with at least one intermediate zone disposed therebetween and a substrate inlet before the CNS growth zones sized to allow a spoolable length substrate to pass therethrough.03-21-2013
20130089666Substrate Holder for Graphene Film Synthesis - An apparatus and method for graphene film synthesis. The apparatus includes a quasi enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.04-11-2013
20130136860METHOD OF FABRICATING A CARBON NANOTUBE ARRAY - A method of fabricating carbon nanotube arrays (CNTA) on an oxide catalyst layer is disclosed. In one embodiment, the oxide catalyst is a metal oxide. The metal oxide may be deposited on a substrate used as a support. The CNTA is grown on the oxide catalyst layer under conditions promoting CNT growth. CNT growth is dependent on temperature, concentration of oxidizing molecules and carbon availability. One embodiment of the method comprises depositing an oxide catalyst layer on the substrate, heating the catalyst layer at certain rates to the target temperatures, adding oxidation molecules for the pretreatment of the oxide catalyst layer, and growing the array on the substrate. The oxide catalyst layer may comprise a group VIII element.05-30-2013
20130189432CARBON NANOTUBE PRODUCING APPARATUS AND CARBON NANOTUBE PRODUCING METHOD - Provided is a carbon nanotube producing apparatus comprising a reaction chamber that accommodates a substrate that forms carbon nanotubes and reactive gas supply mechanism for supplying a reactive gas to the substrate accommodated in the reaction chamber, in which the reactive gas supply mechanism has two or more shower plates having a plurality of gas ejection holes, the shower plates being overlappingly arranged so that the reactive gas passes therethrough in order and the reactive gas is supplied to a carbon nanotube forming face of the substrate and the shower plates are arranged so that the ejection holes of the shower plates that are adjacent to each other do not overlap each other in a gas ejection direction.07-25-2013
20130309402INTERDIGITATED SUBSTRATE SUPPORT ASSEMBLY FOR SYNTHESIS OF LARGE AREA THIN FILMS - The invention provides methods and apparatus for supporting a substrate in a chemical vapor deposition reactor, and methods and apparatus for synthesizing large area thin films. The invention provides a substrate support assembly comprising at least two interdigitable substrate support fixtures, each fixture carrying at least one finger-like formation for engaging and positioning the substrate during the deposition process that creates the thin film. When two such fixtures are interdigitated, the substrate may be positioned not only in between and around the finger-like substrate engagement members, but also on the outside of each fixture, thus achieving a many-fold increase in the effective width of the substrate.11-21-2013
20140023783APPARATUS FOR MANUFACTURING GRAPHENE FILM AND METHOD FOR MANUFACTURING GRAPHENE FILM - Provided is a graphene film manufacturing apparatus including a source fluid supply unit for supplying a source fluid containing carbon; a gas discharge unit for receiving the source fluid from the source fluid supply unit, thermally decomposing the source fluid into a gas, and discharging the gas; a catalyst substrate disposed to contact the gas discharged from the gas discharge unit, and a heating device disposed to locally heat a region of the catalyst substrate that contacts the discharged gas.01-23-2014
20140044873SINGLE-WALLED CARBON NANOTUBE (SWCNT) FABRICATION BY CONTROLLED CHEMICAL VAPOR DEPOSITION (CVD) - The system and method disclosed herein provide a predetermined, variable volume argon-hydrogen gas mixture for a chemical vapor deposition (CVD)-based process, which enables the growth of single-walled carbon nanotube (SWCNT) structures. The exemplary SWCNT structures of this system and method are fabricated with a degree of control over the field emissions produced by the SWCNT and the range of diameters of each of the SWCNTs. Specifically, the predetermined diameter ranges and the field emissions of the SWCNT structure corresponds to a predetermined range of concentrations of the argon-hydrogen mixture and the argon concentration respectively. The defects and the diameter of the SWCNTs typically contribute to field emissions from the SWCNT structures at low applied voltages.02-13-2014
20140044874GRAPHENE MANUFACTURING SYSTEM AND THE METHOD THEREOF - The present invention discloses a graphene manufacturing system and the method thereof. In the prior arts, in order to grow graphene layers, a metal foil or thin film has to be prepared and disposed either on the surface or in the vicinity of the of the work piece so as to catalyze the decomposition of carbon feedstock nearby. In contrast, the present invention uses a fluid which contains catalyst metal ions as the source of catalysts and imports the catalytic particles from outside of the working chamber. The metal particles catalyze the decomposition of carbon feedstock at high temperature and cause the direct growth of graphene layers on insulator substrates. Therefore, the present invention is able to use cost-effective materials as the source of catalysts to grow graphene for practical applications.02-13-2014
20140113074METHOD FOR SYNTHESIS OF LARGE AREA THIN FILMS - Improved methods for synthesizing large area thin films are disclosed, which result in films of enhanced width. The methods comprise providing a separator material which is rolled or wound up, along with the metallic foil substrate on which the thin film is to be deposited, to form a coiled composite which is then subjected to conventional chemical vapor deposition. Optionally, a winding tool may be used to aid in the rolling process. The methods enable a many-fold increase in the effective width of the substrate to be achieved.04-24-2014
20140154416APPARATUS AND METHOD FOR PRODUCING ORIENTED CARBON NANOTUBE AGGREGATE - An apparatus for producing an aligned carbon nanotube aggregate includes: a growth unit that includes a growth furnace for synthesizing the aligned carbon nanotube aggregate by causing an environment surrounding a catalyst to be an environment of a raw material gas and by heating at least either the catalyst or the raw material gas; a transfer unit that transfers an aligned CNT aggregate production substrate from an inside to an outside of the growth furnace; and a heating section for heating, from the outside of the growth furnace, an outlet of the growth furnace through which outlet the aligned CNT aggregate production substrate exits from the growth furnace.06-05-2014
20140170316DEVICE FOR MANUFACTURING AND METHOD FOR MANUFACTURING ORIENTED CARBON NANOTUBE AGGREGATES - An apparatus of the present invention for producing an aligned carbon nanotube includes: at least one injection section including at least one injection hole from which a raw material gas is injected to a base substrate; an exhaust vent for exhausting the raw material gas; and an exhaust section including a plurality of exhaust vents, the plurality of exhaust vents being provided so as to be closer to the exhaust vent than a plurality of injection holes included in the at least one injection hole of the at least one injection section.06-19-2014
20140272136Chemical Vapor Deposition of Graphene Using a Solid Carbon Source - Aspects of the invention are directed to a method of forming a film on a substrate. The substrate and a solid carbon source are placed into a reactor. Subsequently, both the substrate and the solid carbon source are heated. Optionally, one or more process gases may be introduced into the reactor to help drive the formation of the film. The film comprises graphene.09-18-2014
20150125604Method of Producing Graphene - Graphene can be produced from the byproducts formed during electrolysis of coal. These byproducts may be electrolyzed coal particles, gelatinous film formed on the electrolyzed coal particles, or the electrolyzed coal particles together with the gelatinous film. The electrolyzed coal byproduct is deposited as a thin layer onto a surface, or carrier substrate 05-07-2015
20150132488METHOD AND APPARATUS FOR FORMING A GRAPHENE PATTERN USING PEEL-OFF TECHNIQUE - The present invention relates to a graphene pattern forming method using a delamination technique employing a polymer stamp. The technique is adequate for forming a graphene pattern having a an arbitrary target pattern. According to the present invention, a portion of a graphene layer formed on a substrate is physically and selectively delaminated using the polymer stamp to simply and easily form a desired graphene pattern having a uniform line width on the substrate. Also, a portion of the graphene layer formed on the substrate is physically and selectively delaminated in a roll-to-roll manner using a rotating body stamp or by using a stamp having a large area to simply and easily form a desired graphene pattern having a uniform line width on the a substrate having a large area.05-14-2015
20150321917METHOD OF MANUFACTURING CARBON NANOTUBES - This method improves a carbon nanotube growth environment. In this method of manufacturing carbon nanotubes, the supply amount of catalyst activating material supplied in a carbon nanotube growing step is adjusted to the supply amount of catalyst activating material supplied at the time of maximum concentration of a gas component among multiple measurements made in the growing step, the gas component being at least one selected from the group consisting of hydrogen, methane, and ethane.11-12-2015
20150349264Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor - A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.12-03-2015
20150353362GRAPHENE MANUFACTURING APPARATUS AND METHOD - A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.12-10-2015
20150368109METHOD FOR MANUFACTURING GRAPHENE, SAID GRAPHENE, AND APPARATUS FOR MANUFACTURING SAME - The present invention provides a method for manufacturing graphene, said graphene, and an apparatus for manufacturing same. The method for manufacturing graphene comprises the steps of: loading a catalytic metal layer into a chamber; applying tensile force to the catalytic metal layer; and forming graphene on the catalytic metal layer by supplying a carbon source into the chamber while the tension is applied to the catalytic metal layer. Therefore, the size of the grains on the catalytic metal layer can be increased by applying tension to the catalytic metal layer, and high quality uniform graphene can be grown through the use of the catalytic metal layer.12-24-2015
20160023906Synthesis Of High Quality Carbon Single-Walled Nanotubes - Methods and processes for synthesizing high quality carbon single-walled nanotubes (SWNTs) are provided. A carbon precursor gas at reduced concentration (pressure) is contacted with a catalyst deposited on a support and at temperature about 10° C. above the SWNT synthesis onset temperature, but below the thermal decomposition temperature of the carbon precursor gas for given growth conditions. The concentration (pressure) of the carbon precursor gas can be controlled by reducing the total pressure of the gas, or by diluting with an inert carrier gas, or both. The methods produce SWNTs with the ratio of G-band to D-band in Raman spectra (I01-28-2016
20160031712APPARATUS FOR MANUFACTURING GRAPHENE, METHOD FOR MANUFACTURING THE SAME AND GRAPHENE MANUFACTURED BY THE METHOD - An apparatus for manufacturing high quality graphene, a method for manufacturing the same and graphene manufactured by the method are disclosed. The apparatus for manufacturing graphene includes a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source under a second condition, a connector for connecting the first chamber to the second chamber, and a feeder for continuously supplying a catalyst metal to the first chamber and the second chamber.02-04-2016
20160075558METHOD FOR PRODUCING ALIGNED CARBON NANOTUBE ASSEMBLY - Provided is a production apparatus (03-17-2016
20160130147CNT-INFUSED METAL FIBER MATERIALS AND PROCESS THEREFOR - A composition includes a carbon nanotube (CNT)-infused metal fiber material which includes a metal fiber material of spoolable dimensions, a barrier coating conformally disposed about the metal fiber material, and carbon nanotubes (CNTs) infused to the metal fiber material. A continuous CNT infusion process includes: (a) disposing a barrier coating and a carbon nanotube (CNT)-forming catalyst on a surface of a metal fiber material of spoolable dimensions; and (b) synthesizing carbon nanotubes on the metal fiber material, thereby forming a carbon nanotube-infused metal fiber material.05-12-2016
20160186008COATING COMPOSITIONS COMPRISING A COMPOUND WITH AT LEAST TWO CYCLIC CARBONATE GROUPS AND A SILOXANE GROUP - Coating compositions comprising a compound having at least two cyclic carbonate groups and a siloxane group (called “carbonate compound”).06-30-2016
20160199875Carbene-Functionalized Composite Materials07-14-2016
20160251755METHOD AND APPARATUS FOR FORMING CARBON FILM09-01-2016
20160251757PROCESS FOR PRODUCING CARBON NANOTUBES AND METHOD FOR FORMING WIRING09-01-2016
20160376156METHOD OF GROWING A GRAPHENE COATING OR CARBON NANOTUBES ON A CATALYTIC SUBSTRATE - A method of growing a graphene coating or carbon nanotubes on a catalytic substrate by chemical vapor deposition is provided. In the method, the chemical vapor deposition is carried out in an atmosphere in which a ratio P12-29-2016
20170233254Free Atom Nanotube Growth08-17-2017
20190144283Apparatus and Method for Large-Scale Production of Graphene05-16-2019

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