| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427249150 | Silicon and carbon containing coating (e.g., silicon carbide, etc.) | 10 |
| 20120196038 | JIG FOR SEMICONDUCTOR PRODUCTION AND METHOD FOR PRODUCING SAME - The present invention relates to: a jig for semiconductor production which is used for a CVD device in a semiconductor production process and contains a jig base and an SiC coating film formed on the jig base, in which the SiC coating film has a surface area ratio (surface area S | 08-02-2012 |
| 20130040055 | SURFACE PROCESSING METHOD - In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer. | 02-14-2013 |
| 20140161978 | METHOD AND APPARATUS FOR FORMING C/SiC FUNCTIONALLY GRADED COATING - According to an embodiment of the invention, provided is a method of forming a C/SiC functionally graded coating. In the embodiment, in a step of forming the C/SiC functionally graded coating, a reaction condition is controlled by feeding a larger amount of the oxygen gas at an early stage than a latter stage of the reaction so that a pure carbon film is formed on a surface of the substrate and then gradually decreasing the amount of the oxygen gas so that a SiC film having a higher concentration with an increasing distance from the surface of the substrate is formed. | 06-12-2014 |
| 20140170318 | METHODS AND SYSTEMS FOR REDUCING SILICA RECESSION IN SILICON-CONTAINING MATERIALS - The present disclosure relates to methods and systems for reducing silica recession of silicon-containing ceramics or silicon-containing ceramic composites, particularly those exposed to a combustion gas or to combustion gas environments, including those exposed to high temperature combustion gas environments. The methods and systems involve silicon-doping of compressed air and/or removal of moisture from compressed air prior to co-mingling the treated compressed air with the combustion gas to which the silicon-containing ceramics or silicon-containing ceramic composites are exposed. | 06-19-2014 |
| 20150118394 | GROUND STATE HYDROGEN RADICAL SOURCES FOR CHEMICAL VAPOR DEPOSITION OF SILICON-CARBON-CONTAINING FILMS - A thin layer of a silicon-carbon-containing film is deposited on a substrate by generating hydrogen radicals from hydrogen gas supplied to a radicals generation chamber, supplying the hydrogen radicals to a substrate processing chamber separate from the substrate processing chamber via a multiport gas distributor, and reacting the hydrogen radicals therein with an organosilicon reactant introduced into the substrate processing chamber concurrently. The hydrogen radicals are allowed to relax into a ground state in a radicals relaxation zone within the substrate processing chamber before reacting with the organosilicon reactant. | 04-30-2015 |
| 20150299898 | SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE - A susceptor processing method according to an embodiment includes: placing a plate on a susceptor arranged in a film forming chamber; heating the susceptor in order to have a temperature higher than that of the plate by using a main heater arranged below the susceptor and an auxiliary heater arranged in an upper part of the film forming chamber, and subliming a SIC film having been formed on a surface of the susceptor and adhering the sublimed SIC on the plate; and transporting the plate from the film forming chamber, the plate having SIC adhered thereon. | 10-22-2015 |
| 20160024652 | FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD - A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor. | 01-28-2016 |
| 20160159702 | METHOD FOR PRODUCING HIGH STRENGTH CERAMIC MATRIX COMPOSITES - A high strength ceramic matrix composite and method for same is provided. A fiber preform is provided that is either self-supporting or is constrained by a tool for subsequent processing. The preform is coated with about 0.1 μm to about 5 μm of silicon carbide. The silicon carbide is coated with about 0.05 μm to about 2 μm boron nitride, carbon, or other interface layer. The interface layer is coated with at least about 0.2 μm to about 40 μm of silicon carbide. | 06-09-2016 |
| 20160194753 | SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM | 07-07-2016 |
| 427249160 | Inorganic carbon base (e.g., graphite, etc.) | 1 |
| 20110076401 | Method of Making Showerhead for Semiconductor Processing Apparatus - A method of making a showerhead for a semiconductor processing apparatus is disclosed. In one embodiment, the method includes providing a substrate; forming first holes in the substrate; forming a protective film on the substrate, where the protective film covers sidewalls of the first holes; and forming second holes in the substrate, where a part of the protective film within the first holes is removed. In another embodiment, the method includes providing a substrate; forming islands on the substrate; forming a protective film on the substrate, where the protective film does not cover the tops of the islands; and forming holes in the islands. | 03-31-2011 |
