| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427960800 | Vapor or gas deposition | 13 |
| 20080233276 | COPPER (I) COMPOUNDS USEFUL AS DEPOSITION PRECURSORS OF COPPER THIN FILMS - Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. | 09-25-2008 |
| 20080241357 | METHOD FOR HEATING A SUBSTRATE PRIOR TO A VAPOR DEPOSITION PROCESS - A method for depositing a thin film on a substrate in a vapor deposition system is described. Prior to the deposition process, the substrate is provided within the vapor deposition system and coupled to an upper surface of a substrate holder within the vapor deposition system, whereby the substrate is heated to a deposition temperature in a first gaseous atmosphere. Thereafter, the first gaseous atmosphere is displaced by a second gaseous atmosphere, and the pressure is adjusted to a deposition pressure. The second gaseous atmosphere comprises a gaseous composition that is substantially the same as the carrier gas utilized to transport film precursor vapor to the substrate and the optional dilution gas utilized to dilute the carrier gas and film precursor vapor. | 10-02-2008 |
| 20080241358 | CATALYST-ASSISTED ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS WITH INTEGRATED IN-SITU REACTIVE TREATMENT - A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO | 10-02-2008 |
| 20090061080 | METHODS FOR FORMING CONDUCTIVE STRUCTURES AND STRUCTURES REGARDING SAME - A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum, to oxidize a metal layer thereon, e.g, ruthenium layer. The structure is particularly advantageous for use in capacitor structures and memory devices, such as dynamic random access memory (DRAM) devices. | 03-05-2009 |
| 20100209597 | SELECTIVE OXIDATION PROCESS - Silicon is selectively oxidized relative to a metal-containing material in a partially-fabricated integrated circuit. In some embodiments, the silicon and metal-containing materials are exposed portions of a partially-fabricated integrated circuit and may form part of, e.g., a transistor. The silicon and metal-containing material are oxidized in an atmosphere containing an oxidant and a reducing agent. In some embodiments, the reducing agent is present at a concentration of about 10 vol % or less. | 08-19-2010 |
| 20100215842 | TANTALUM AMIDE COMPLEXES FOR DEPOSITING TANTALUM-CONTAINING FILMS, AND METHOD OF MAKING SAME - Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films. | 08-26-2010 |
| 20110045171 | Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper - Techniques for forming a ruthenium (Ru) capping layer on a copper (Cu) wire are provided. In one aspect, a method of forming a Ru capping layer on at least one exposed surface of a Cu wire embedded in a dielectric structure includes the following steps. A first Ru layer is selectively deposited onto the Cu wire and the dielectric structure by chemical vapor deposition (CVD) for a period of time during which selective nucleation of the Ru occurs on the surface of the Cu wire. Any nucleated Ru present on the dielectric structure is oxidized. The oxidized Ru and an aqueous acid are contacted to remove the oxidized Ru from the dielectric structure based on a selectivity of the aqueous acid in dissolving the oxidized Ru. A second Ru layer is selectively deposited onto the first Ru layer by CVD to produce a thicker Ru layer. The steps of oxidizing and contacting the oxidized Ru and an aqueous acid are repeated until a Ru layer having a thickness that is suitable for use as a Ru capping layer on at least one exposed surface of the Cu wire embedded in the dielectric structure is achieved. | 02-24-2011 |
| 20110052797 | Low Temperature Plasma-Free Method for the Nitridation of Copper - Techniques for nitridation of copper (Cu) wires. In one aspect, a method for nitridation of a Cu wire is provided. The method includes the following step. The Cu wire and trimethylsilylazide (TMSAZ) in a carrier gas are contacted at a temperature, pressure and for a length of time sufficient to form a nitridized layer on one or more surfaces of the Cu wire. The Cu wire can be part of a wiring structure and can be embedded in a dielectric media. The dielectric media can comprise an ultra low-k dielectric media. | 03-03-2011 |
| 20110076390 | METHODS FOR MULTI-STEP COPPER PLATING ON A CONTINUOUS RUTHENIUM FILM IN RECESSED FEATURES - Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit. | 03-31-2011 |
| 20120207916 | APPARATUS AND METHOD FOR COOLING OR HEATING WORK PIECE IN A VACUUM CHAMBER - A vacuum processing system includes a vacuum chamber in connection with a vacuum pump that can exhaust air or vapor in the vacuum chamber, and a container in the vacuum chamber configured to contain one or more work pieces therein and to receive a heat-exchange liquid that comes into contact with the one or more work pieces to allow heat exchange with the one or more work pieces. The vacuum pump can exhaust at least a portion of the vapor evaporated from the heat-exchange liquid on the work pieces or in the container. A deposition source unit can provide material to be deposited on the one or more work pieces in vacuum. The one or more work pieces can be brought a predetermined temperature by the heat-exchange liquid. | 08-16-2012 |
| 20130280417 | Hydrophobic Silane Coating for Preventing Conductive Anodic Filament (CAF) Growth in Printed Circuit Boards - An enhanced substrate for making a printed circuit board (PCB) includes a hydrophobic silane coating of a silane composition intermixed with a silane coupling agent applied to a glass fiber substrate. The silane coupling agent is applied to the surface of the substrate for coupling the substrate to a varnish coating. Applying the silane coupling agent to the surface of the substrate creates surface silanols, which are implicated in conductive anodic filament (CAF) growth. A silane composition, which reacts with the surface silanols, is applied to the surface of the substrate having the silane coupling agent applied thereto to form the hydrophobic silane coating. The surface presented by the hydrophobic silane coating/substrate is hydrophobic and essentially silanol-free. This surface is then dried, and varnish is applied thereto. Then, the substrate, hydrophobic silane coating and varnish are subjected to curing conditions to define the PCB. | 10-24-2013 |
| 20140154405 | METHOD AND APPARATUS TO PREWET WAFER SURFACE - The present invention improves the wetting between process solution and the wafer surface when they are put into contact by pre-implementing an adsorbed liquid layer on the entire front surface of the wafer just prior to the process. The pre-implementing adsorbed liquid layer is realized by transporting vaporized liquid molecules from vapor phase at elevated temperature (relative to wafer) and condensing them onto wafer surface. The pre-implementing adsorbed liquid is fully filled in the patterned structures formed on the wafer by multilayer absorption of the vaporized liquid molecules and the temperature of the wafer surface is above dew point of the vaporized liquid while condensing, which avoids generating bubbles inside the patterned structures. | 06-05-2014 |
| 20150024119 | METHOD AND ARRANGEMENT FOR TRANSFERRING ELECTRICALLY CONDUCTIVE MATERIAL IN FLUID FORM ON A SUBSTRATE TO BE PRINTED - A method and an arrangement are disclosed for transferring electrically conductive material in fluid form onto a substrate. Said substrate is preheated to a first temperature, and of said electrically conductive material there is produced fluid electrically conductive material. The fluid electrically conductive material is sprayed onto the preheated substrate to form a pattern of predetermined kind. The substrate onto which said fluid electrically conductive material was sprayed is cooled to a third temperature, which is lower than the melting point of said electrically conductive material. | 01-22-2015 |
