| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427539000 | Oxygen containing atmosphere | 23 |
| 20090061105 | METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT - The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas. | 03-05-2009 |
| 20100196621 | HYBRID COATINGS AND ASSOCIATED METHODS OF APPLICATION - A hybrid coating including a mixture of an organosilane component, a metal alkoxide component and a surfactant component. | 08-05-2010 |
| 20100260944 | METHOD FOR FORMING SILICON DOTS - A method for forming silicon dots which can form silicon dots at a relatively low temperature, with good controllability of the particle diameter of silicon dots depending on the particle diameter of silicon dots to be formed. | 10-14-2010 |
| 20110033634 | PRODUCTION METHOD OF OPTICAL ELEMENT AND OPTICAL ELEMENT - A production method of an optical element, which is utilized in a pickup apparatus using a light source emitting light having wavelength of 380 nm to 420 nm and has a functional layer such as an anti-reflection film | 02-10-2011 |
| 20110064886 | Method of improving optical sensor - A method for improving an optical sensor is disclosed, which includes the following steps: providing an optical sensor; acid-treating the surface of the optical sensor; forming a thin metal film on the acid-treated surface of the optical sensor; and plasma-modifying the thin metal film on the optical sensor. The aforesaid method is to clean the surface of the optical sensor and then to improve the hydrophilicity thereof by acid treatment. The thin metal film subsequently formed has good flatness and improved adhesion to the optical sensor. Once the optical sensor has the improved hydrophilicity, the plasma modification is performed to further improve optical performance of the optical sensor. | 03-17-2011 |
| 20110064887 | MANUFACTURING PROCESS FOR WORKPIECE FOR ELECTROLESS PLATING - A process for manufacturing workpiece whose surface is to be plated by means of electroless plating includes an ozone-processing step, and a superficial-layer removing step. In the ozone-processing step, a workpiece body including resin and having a surface is processed by means of an ozone treatment by brining the workpiece body into contact with a solution including ozone. Thus, a modified layer is formed on the surface of the workpiece body. Then, in the superficial-layer removing step, a superficial layer is removed from the resultant modified layer by applying energy onto the modified layer. | 03-17-2011 |
| 20110151136 | METHODS FOR DEPOSITING HIGH-K DIELECTRICS - Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide. | 06-23-2011 |
| 20110159204 | OXYGEN RADICAL GENERATION FOR RADICAL-ENHANCED THIN FILM DEPOSITION - A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O•), generated from an oxygen-containing second precursor gas, while maintaining spatial or temporal separation of the radicals and the first precursor gas. Simplified reactor designs and process control are possible when the first and second precursor gases are nonreactive under normal processing conditions and can therefore be allowed to mix after the radicals recombine or otherwise abate. In some embodiments, the second precursor gas is an oxygen-containing compound, such as carbon dioxide (CO | 06-30-2011 |
| 20120021138 | NANOLAYER DEPOSITION PROCESS FOR COMPOSITE FILMS - A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides. | 01-26-2012 |
| 20120201973 | PRIMER COMPOSITION FOR CURED SILICON-CONTAINING SURFACE AND ITS USES - A method for improving an adhesion of an adhesive to a cured silicon-containing surface is provided. The method comprises applying a primer composition to the surface before applying the adhesive; and subjecting the surface to a plasma treatment before or after the composition is applied thereto; wherein the primer composition comprises a polar organic solvent, an acrylic monomer, and an amino-containing silane. | 08-09-2012 |
| 20120219724 | METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM - In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film. | 08-30-2012 |
| 20120269987 | Processes and Systems for Engineering a Barrier Surface for Copper Deposition - An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer. | 10-25-2012 |
| 20120308737 | METHOD FOR ANTISEPTIC PROCESSING OF THE SURFACE OF A PRODUCT MADE OF SILICONE RUBBER MATERIAL - The invention concerns a method for antiseptic processing of the surface of a product made of organosilicon rubbers with molecular weight 2·10 | 12-06-2012 |
| 20130059091 | METHOD FOR FORMING CARBON NANOTUBES AND CARBON NANOTUBE FILM FORMING APPARATUS - A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member. | 03-07-2013 |
| 20130101752 | METHOD FOR DEPOSITING CYCLIC THIN FILM - Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method includes the steps of depositing an insulating film by repeatedly performing a deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded, a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber, a reaction step for forming the deposited silicon as an insulating film including silicon by supplying a first reaction gas into the chamber and a second purge step for removing a non-reacted first reaction gas and a reacted byproduct from the chamber; and densifying the insulating film including silicon by supplying a plasma atmosphere into the chamber. | 04-25-2013 |
| 20130149462 | SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING - A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region. | 06-13-2013 |
| 20130183457 | Structure and its method for hydrophobic and oleophobic modification of polymeric materials with atmospheric plasmas - The present invention fabricates a hydrophobic and oleophobic polymer fabric through two stages of modification using atmospheric plasmas. The modified fabric has a rough surface and a fluorocarbon functional group having the lowest surface free energy. The fabric has a grafted fluorocarbon monomer layer to enhance the graft efficiency of the fluorocarbon functional groups and its wash fastness. The atmospheric plasmas can be mass produced and less expensively. Hence, the present invention can rapidly modify surfaces of polymeric materials with low cost and good environment protection. | 07-18-2013 |
| 20130224396 | PLASMA ANNEALING METHOD AND DEVICE FOR THE SAME - There is provided a plasma annealing device that can change the crystal structure of a film by processing the film (coating) on a substrate and that has excellent productivity. A method for producing a film includes step (A) irradiating a film on a substrate with atmospheric pressure plasma, wherein the crystal structure of a constituent of the film is changed. The step (A) may include generating plasma under atmospheric pressure by energization at a frequency of 10 hertz to 100 megahertz and a voltage of 60 volts to 1,000,000 volts, and directly irradiating the film on the substrate with the generated plasma. A method for changing a crystal structure of a constituent of a film includes step (A). A plasma generation device used in step (A). An electronic device produced through step (A). | 08-29-2013 |
| 20130236658 | PATTERN FORMATION METHOD - According to one embodiment, a pattern formation method includes: forming a cyclic pattern having first strips of a first polymer component and second strips of a second polymer component by forming chemical guides having affinity for the first polymer component on a substrate to be processed and coating a directed self-assembly material comprising the first polymer component and the second polymer component on the substrate to be processed. In this pattern formation method, the chemical guides comprise a plurality of regions arrayed in matrix with a predetermined interval on the substrate to be processed; each of the regions has a symmetrical shape with respect to a centerline of the region, the centerline extends in the first direction; and a width along the first direction of the region is narrowed from the centerline toward each of end parts of the region. | 09-12-2013 |
| 20130243969 | CHEMICAL VAPOR DEPOSITION OF GRAPHENE ON DIELECTRICS - A method for synthesizing graphene films is disclosed. Monolayer or multilayer graphene can be directly grown on the dielectric materials. The method includes the following steps: disposing dielectric materials and metals in a reactor, introducing reaction gases into the reactor and decomposing the reaction gases by heating, thus directly depositing graphene films on the surfaces of the dielectrics. High crystalline quality and low-defect graphene films can be synthesized directly on dielectric materials, without the process of wet etching and transfer. The method opens up a more direct route to apply graphene on electronics, optoelectronics, and bio-medical devices. | 09-19-2013 |
| 20140295098 | COMPOSITE CATALYST AND METHOD FOR MANUFACTURING CARBON NANOSTRUCTURED MATERIALS - A method of forming a carbon nanotube array substrate is disclosed. One embodiment comprises depositing a composite catalyst layer on the substrate, oxidizing the composite catalyst layer, reducing the oxidized composite catalyst layer, and growing the array on the composite catalyst layer. The composite catalyst layer may comprise a group VIII element and a non-catalytic element deposited onto the substrate from an alloy. In another embodiment, the composite catalyst layer comprises alternating layers of iron and a lanthanide, preferably gadolinium or lanthanum. The composite catalyst layer may be reused to grow multiple carbon nanotube arrays without additional processing of the substrate. The method may comprise bulk synthesis by forming carbon nanotubes on a plurality of particulate substrates having a composite catalyst layer comprising the group VIII element and the non-catalytic element. In another embodiment, the composite catalyst layer is deposited on both sides of the substrate. | 10-02-2014 |
| 20140302254 | PLASMA CLEANING METHOD - A plasma cleaning method is disclosed, the method includes the steps of performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas. Advantageously, the combined use of the remote plasma cleaning and in-situ RF nitrogen plasma cleaning processes, as well as the non-use of any nitrogen-containing gas during the deposition of the seasoning film, can together greatly improve the conventional wafer backside metal contamination problem. | 10-09-2014 |
| 20160185658 | METHOD FOR MANUFACTURING ANTIFOGGING POROUS SILICA THIN FILM - A method for manufacturing an antifogging porous silica thin film includes preparing a silicon block copolymer micelle solution, forming a coating layer by applying the solution on a substrate using a compressed air spraying method, forming a porous silica thin film by subjecting the coating layer to an oxygen plasma treatment, and solvent-annealing the porous silica thin film. | 06-30-2016 |
