Class / Patent application number | Description | Number of patent applications / Date published |
423350000 | Utilizing reducing substance | 55 |
20080226531 | METHOD AND APPARATUS FOR PRODUCING SOLID PRODUCT - Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part. | 09-18-2008 |
20080233037 | APPARATUS AND METHOD FOR MANUFACTURING HIGH PURITY POLYCRYSTALLINE SILICON - An apparatus for manufacturing a high purity polycrystalline silicon is characterized by comprising: a vaporizer | 09-25-2008 |
20080233038 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - To provide a method for producing polycrystalline silicon at relatively low cost, wherein the amount of waste generated is reduced by decreasing the amount of waste generated in producing polycrystalline silicon from silicon chloride by a method of reduction and increasing the amount of reused auxiliary raw materials. In the production of polycrystalline silicon using a gas phase reaction of a silicon chloride gas and a reducing agent gas, a chlorine gas is blown into an exhaust gas discharged from a reaction device to initiate a reaction, an unreacted reducing agent and silicon particles contained in the exhaust gas are chlorinated, and then a reducing agent chloride contained in the exhaust gas is separated from the other impurities and recovered. | 09-25-2008 |
20080253955 | Process and apparatus for purifying low-grand silicon material - A process and apparatus for purifying low-purity silicon material and obtaining a higher-purity silicon material is provided. The process includes providing a melting apparatus equipped with an oxy-fuel burner, and melting the low-purity silicon material in the melting apparatus to obtain a melt of higher-purity silicon material. The melting apparatus may include a rotary drum furnace and the melting of the low-purity silicon material may be carried out at a temperature in the range from 1410° C. to 1700° C. under an oxidizing or reducing atmosphere. A synthetic slag may be added to the molten material during melting. The melt of higher-purity silicon material may be separated from a slag by outpouring into a mould having an open top and insulated bottom and side walls. Once in the mould, the melt of higher-purity silicon material can undergo controlled unidirectional solidification to obtain a solid polycrystalline silicon of an even higher purity. | 10-16-2008 |
20080274031 | Method for Producing High Purity Silicon - The invention relates to a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing high purity silicon by removing boron from silicon by oxidization including commencing an oxidization reaction between an oxidizing agent and molten silicon, and cooling at least part of the oxidizing agent during the reaction. | 11-06-2008 |
20080292525 | Method and Reactor for Continuous Production of Semiconductor Grade Silicon - This invention relates to a method and reactor for continuous production of semiconductor grade silicon by decomposition of a silicon containing gas of ultra-high purity to particulate silicon and other decomposition products in a free-space reactor and in which the gaseous stream of decomposition gas is set into a swirl motion. Optionally the method and reactor also includes means for melting the formed particulate silicon to obtain a continuous phase of elementary silicon, and then casting the liquid silicon to form solid objects of semiconductor grade silicon. | 11-27-2008 |
20090053126 | METHOD FOR MASS PRODUCTION OF NANOSTRUCTURES USING MESOPOROUS TEMPLATES AND NANOSTRUCTURES PRODUCED BY THE SAME - A method for the mass production of nanostructures is provided. The method comprises introducing metal catalyst nanoparticles into a plurality of uniformly sized pores of mesoporous templates, distributing the templates containing the metal catalyst nanoparticles in a three-dimensional manner, and introducing a nanowire source into the pores of the templates to grow the nanowire source into nanowires along the length of the pores. Further provided are nanostructures produced by the method. The nanostructures have a uniform thickness. In addition, the nanostructures may have various shapes and can be controllably doped. The nanostructures can be applied to a variety of devices, including electronic devices, e.g., field effect transistors (FETs) and light-emitting diodes (LEDs), photodetectors, nano-analyzers, and high-sensitivity signal detectors for various applications, e.g., cancer diagnosis. | 02-26-2009 |
20090060825 | PRODUCTION METHOD OF NANOPARTICLE - A production method of nano-sized silicon crystal particles comprising the step of allowing monosilane to be oxidized in a liquid phase. | 03-05-2009 |
20090074650 | METHOD FOR THE PRODUCTION OF SILICON SUITABLE FOR SOLAR PURPOSES - An exemplary method of production of solar grade silicon is disclosed. The method comprises melting the silicon and directionally solidifying the melt. The method additionally comprises forming a crystallization front during the directional solidification, the front having the shape of at least a section of a spherical surface. Also disclosed are a silicon wafer and a solar cell in accordance with an exemplary embodiment of the present invention. | 03-19-2009 |
20090081108 | Clean bench and method of producing raw material for single crystal silicon - A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space. | 03-26-2009 |
20090092535 | METHOD FOR PROCESSING SILICON POWDER TO OBTAIN SILICON CRYSTALS - Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid. | 04-09-2009 |
20090098039 | Silicon Production Method - There is provided a silicon production method which comprises producing semiconductor grade silicon while producing solar grade silicon by converting a portion of trichlorosilane into silicon for solar cells. | 04-16-2009 |
20090130015 | Method for producing high purity silicon - The present invention provides a method for producing high purity silicon. The method for producing high purity silicon comprises a step of reducing halogenated silicon represented by the following formula (1) with aluminum, wherein the aluminum used as a reductant has a purity of not less than 99.9% by weight, | 05-21-2009 |
20090136409 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - The present invention provides a method for producing polycrystalline silicon. The method for producing polycrystalline silicon comprises the steps of (A), (B), and (C),
| 05-28-2009 |
20090202415 | PROCESS FOR PRODUCING HIGH-PURITY SILICON AND APPARATUS - When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point of the silicon or less. | 08-13-2009 |
20090208401 | PROCESS FOR PRODUCING BORON ADDED PURIFIED SILICON - Provided is a process for producing a boron added silicon (purified silicon) in an energy saving mode from a reduced silicon obtained by reducing a silicon halide with a metal aluminium. The production process of the invention comprises reducing a silicon halide with a metal aluminium to give a reduces silicon, heating and melting the resulting reduced silicon, and adding boron thereto followed by solidification for purification under the condition of a temperature gradient provided in one direction in a mold. Preferably, after washed with an acid, the reduced silicon is heated and molten, and boron is added thereto. After the reduced silicon is heated and molten under reduced pressure, boron is added thereto. After heated and molten, the reduced silicon is purified by solidification in one direction, then heated and molten, and thereafter boron is added thereto. | 08-20-2009 |
20090232722 | METHOD FOR PRODUCING SILICON - A method for producing silicon is provided. The silicon production method comprises the step (i) of reducing a halosilane represented by the formula (1) with a metal | 09-17-2009 |
20090263307 | Silicon Production Process - An improved process for producing high purity silicon results from the reaction of sodium with pure silicon tetrafluoride gas, which produces sodium fluoride as a by-product. The silicon tetrafluoride gas is formed by decomposing sodium fluorosilicate. The sodium fluorosilicate is produced by precipitation when fluorosilicic acid (FSA) is reacted with the by-product sodium fluoride in closed loop process. Likewise, the fluorosilicic acid is preferably formed at high purity using a source material that consists essentially of silica by reacting the by-product sodium fluoride with an acid to create reactive fluoride ions. | 10-22-2009 |
20090274608 | CALCIUM-SILICATE BASED SLAG FOR TREATMENT OF MOLTEN SILICON - A method for making solar grade silicon from metallurgical grade silicon is disclosed, which including, treating a calcium-silicate based slag by molten calcium-silicate based slag in a first vessel, whereby phosphorous in the calcium-silicate based slag is transferred to the ferrosilicon alloy producing a calcium-silicate based containing less than 3 ppmw phosphorous; obtaining the calcium-silicate based slag containing less than 3 ppmw phosphorous from the first vessel; treating a molten metallurgical grade silicon in a second vessel with the calcium-silicate based slag containing less than 3 ppmw phosphorous to reduce the content of phosphorous, boron and iron in the metallurgical grade silicon; and removing solar grade silicon with low content of phosphorous, boron and iron from the second vessel. | 11-05-2009 |
20090324479 | FLUIDIZED BED REACTOR SYSTEMS AND METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS - Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall. | 12-31-2009 |
20100166634 | METHOD AND A REACTOR FOR PRODUCTION OF HIGH-PURITY SILICON - Method and equipment for production of high purity silicon (Si) metal from reduction of silicon tetrachloride (SiCl | 07-01-2010 |
20100215563 | METHOD FOR PRODUCING SILICON - The invention provides a method for producing silicon. The method for producing silicon is a method wherein a halogenated silane represented by the following formula (1) is reduced with a metal, the method comprising a first step of bringing metal particles into contact with a halogenated silane at a temperature T1 below the melting point of the metal to obtain silicon, and a second step following the first step, of bringing the metal residue into contact with a halogenated silane at a temperature T2 at or above the melting point of the metal to obtain additional silicon. | 08-26-2010 |
20100221171 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - This invention relates generally to the area of metallurgy and/or chemistry and, more particularly, to the technologies and facilities for production of gaseous silicon tetrafluoride and polycrystalline silicon from gaseous silicon tetrafluoride. The method for production of silicon tetrafluoride from fluorosilicic acid solution includes: generation of acid extract, extract washing, extract drying, extract decompounding, bubbling of unseparated gaseous silicon tetrafluoride and hydrogen fluoride flow through silicon dioxide. The method of silicon production includes interreaction between gaseous silicon tetrafluoride and magnesium vapour with subsequent separation of the final product. Technical results is as follows: production of silicon with high purity level, increased output of the final product, improvement of environmental friendliness of production process, simplification of the technological process of silicon production, decreased prime cost of the final product. | 09-02-2010 |
20100233063 | METHOD FOR MANUFACTURING HIGH-PURITY SILICON MATERIAL - The present invention discloses a method for manufacturing a silicon material with high purity, and the method comprises the following steps of: selecting high purity quartz as a raw material; cleaning and comminuting the quartz; choosing the particle size of the quartz between 20 mm and 80 mm by an optical analyzer; purifying the quartz; melting the quartz in a metallurgical furnace; proceeding carbothermal reduction and post-refining to the quartz so as to obtain liquid silicon; draining the liquid silicon into a ladle through a tap hole of the metallurgical furnace; removing impurities of the liquid silicon in the ladle by Moist reduction Gas Blowing and Slag Treating; pouring the liquid silicon into a casting area of a crystal growth furnace; proceeding Directional Solidification to the liquid silicon in the casting area so as to obtain a solid silicon material. | 09-16-2010 |
20100233064 | METHOD FOR PURIFYING SILICON - The present invention provides for methods of purifying silicon, methods for obtaining purified silicon, as well as methods for obtaining purified silicon crystals, purified granulized silicon and/or purified silicon ingots. | 09-16-2010 |
20100247416 | SILICON MANUFACTURING APPARATUS AND RELATED METHOD - A silicon manufacturing apparatus is disclosed as having a reactor tube ( | 09-30-2010 |
20100284887 | METHOD AND DEVICE FOR PRODUCING SILICON - A method for producing silicon by the thermal reduction of a starting material based on silicon dioxide using a reducing agent in a microwave oven. | 11-11-2010 |
20110044877 | METHOD OF PURIFYING SILICON UTILIZING CASCADING PROCESS - The present invention relates to a method of purifying a material using a metallic solvent. The present invention includes a method of purifying silicon utilizing a cascade process. In a cascade process, as the silicon moves through the purification process, it contacts increasingly pure solvent metal that is moving through the process in an opposite direction. | 02-24-2011 |
20110044878 | Process for Producing Silicon - A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carring step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas. | 02-24-2011 |
20110052475 | Production of High Purity Silicon from Amorphous Silica - A process to the production of silicon from amorphous silica is disclosed. The amorphous silica is formed from a material rich in silica, especially rice husk ash or silica fume. The process comprises subjecting the amorphous silica to leaching with a lixiviant of aqueous mineral acid, especially hydrochloric acid. Preferably, material rich in silica is roasted at a temperature of not more than 850° C., subjected to leaching and then subjected to a second roasting at a temperature of less than 750° C. The process provides for the production of high purity silicon, especially to the production of solar grade silicon (SoG-Si). | 03-03-2011 |
20110176986 | METHOD AND A REACTOR FOR PRODUCTION OF HIGH-PURITY SILICON - The present invention relates to a method and equipment for production of high purity silicon by reduction of SiCl | 07-21-2011 |
20110182795 | REDUCTION OF SILICA - A process for producing silicon comprising reacting silica with a reducing gas comprising carbon monoxide, wherein the reducing gas does not contain elemental carbon. A reactor for producing silicon comprising a carbon combustion chamber for reacting carbon with oxygen to generate a reducing gas comprising carbon monoxide, wherein the reducing gas contains no elemental carbon; a reaction chamber for reacting the reducing gas containing no elemental carbon with silica, the reaction chamber communicating with the carbon combustion chamber; a temperature controller for controlling the temperature of the reaction chamber; a silica inlet port communicating with the reaction chamber for admitting the silica to the reaction chamber; and a silicon outlet port communicating with the reaction chamber for allowing the silicon to leave the reaction chamber. | 07-28-2011 |
20110182796 | METHOD FOR THE PYROLYSIS OF CARBOHYDRATES - The present invention relates to methods for the technical pyrolysis of a carbohydrate or carbohydrate mixture at an elevated temperature while adding silicon oxide, to a pyrolysis product obtainable in this way, and to the use thereof as a reducing agent for the production of solar silicon from silicic acid and carbon at a high temperature. | 07-28-2011 |
20110206592 | LOW COST ROUTES TO HIGH PURITY SILICON AND DERIVATIVES THEREOF - The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon). | 08-25-2011 |
20110217225 | Method and Apparatus for Refining Metallurgical Grade Silicon to Produce Solar Grade Silicon - A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly. | 09-08-2011 |
20110236292 | Clean bench and method of producing raw material for single crystal silicon - A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space. | 09-29-2011 |
20110256047 | CASCADING PURIFICATION - The present invention provides a method of purifying a material using a cascading dissolution and washing process. The dissolution and washing processes can contain single or multiple stages. Water and dissolving chemicals are recycled through the process towards the beginning of the process. | 10-20-2011 |
20110262339 | PRODUCTION OF SOLAR-GRADE SILICON FROM SILICON DIOXIDE - The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon. | 10-27-2011 |
20110268643 | Production of Silicon - A process is provided for the production of elemental silicon from a silica containing glass melt including contacting the glass with a metal capable of undergoing a bimolecular reaction between the glass and metal at elevated temperature to reduce the oxidation state of the silicon in the glass to elemental silicon while oxidizing the metal, collecting, and optionally separating the elemental silicon. Similarly, elemental germanium is produced from a germania-containing glass. | 11-03-2011 |
20110280786 | SILICON MANUFACTURING METHOD - A method for producing silicon, the method comprising a heating step of heating a metal powder M | 11-17-2011 |
20120045383 | Method for the Manufacture of Photovoltaic Grade Silicon Metal - Disclosed is method for the production of silicon metal of a purity sufficient for the manufacture of commercial grade photovoltaic devices, by first reacting liquid silicon tetrachloride with molten sodium metal, and then by processing the reaction product to remove from the silicon metal, those reaction products which would be detrimental to the performance of the produced silicon metal in commercial grade photovoltaic devices used to generate electric power for commercial sale. | 02-23-2012 |
20120058040 | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor. | 03-08-2012 |
20120063985 | SILICON MANUFACTURING APPARATUS AND SILICON MANUFACTURING METHOD - In a silicon manufacturing apparatus and its related manufacturing method, a zinc gas supply opening ( | 03-15-2012 |
20120100061 | Production of Polycrystalline Silicon in Substantially Closed-loop Processes - Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon. | 04-26-2012 |
20120230904 | PRODUCTION OF HIGH PURITY SILICON FROM AMORPHOUS SILICA - A process to the production of silicon from amorphous silica is disclosed. The amorphous silica is formed from a material rich in silica, especially rice husk ash or silica fume. The process comprises subjecting the amorphous silica to leaching with a lixiviant of aqueous mineral acid, especially hydrochloric acid. Preferably, material rich in silica is roasted at a temperature of not more than 850° C., subjected to leaching and then subjected to a second roasting at a temperature of less than 750° C. The process provides for the production of high purity silicon, especially to the production of solar grade silicon (SoG-Si). | 09-13-2012 |
20120230905 | PROCESS FOR PYROLYSIS OF CARBOHYDRATES - The present invention relates to processes for industrial pyrolysis of a carbohydrate or carbohydrate mixture with addition of amorphous carbon, to a pyrolysis product thus obtainable and to the use thereof, especially as a reducing agent in the production of silicon from silica and carbon at high temperature. | 09-13-2012 |
20130089490 | METHOD AND DEVICE - Method for producing nano- to micro-scale particles of a material by homogeneous thermal decomposition or reduction of a reactant gas ( | 04-11-2013 |
20140072498 | Manufacturing and Applications of Silicon Metal - A method of manufacture is described that uses liquid phase reduction of silicon hydride, to produce silicon metal. Working in liquid phase permits a more compact plant design and offers significantly lower capital costs. | 03-13-2014 |
20140105806 | PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICON - The invention relates to a process for deposition of polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen into a reactor, as a result of which polycrystalline silicon is deposited in the form of rods, which includes passing into the reactor, after the deposition has ended, a gas which attacks silicon or silicon compounds which flows around the polycrystalline rods and an inner reactor wall in order to dissolve silicon-containing particles which are formed in the course of deposition and adhere on the inner reactor wall or on the polycrystalline silicon rods before the polycrystalline silicon rods are removed from the reactor. | 04-17-2014 |
20140271437 | METHOD OF CONTROLLING A GAS DECOMPOSITION REACTOR BY RAMAN SPECTROMETRY - A method for determining the efficiency of a chemical conversion within a gas decomposition reactor having an inlet and an exhaust outlet is disclosed. The method includes measuring a chemical composition of an exhaust gas located within the exhaust outlet using Raman spectra. The measured chemical composition is compared to a set of values. A flow of an inlet gas through the inlet is adjusted to change a subsequently measured chemical composition of a subsequent exhaust gas located within the gas outlet. | 09-18-2014 |
20140328741 | Silicon Photonic Fiber and Method of Manufacture - Methods of converting silica to silicon and fabricating silicon photonic crystal fiber (PCF) are disclosed. Silicon photonic crystal fibers made by the fabrication methods are also disclosed. One fabrication method includes: sealing silica PCF and a quantity of magnesium within a container, the quantity of magnesium defined by 2Mg | 11-06-2014 |
20150104370 | METHOD FOR PRODUCING SILICON METAL AND POROUS CARBON - The method for producing silicon metal and porous carbon from rice hulls is provided. The method comprises a first step S | 04-16-2015 |
20150110702 | PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERTIONS - Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon. | 04-23-2015 |
20160107894 | METHOD FOR PRODUCING GRANULAR POLYSILICON - Production of granular polysilicon is made more economical by extracting heat from the hot off-gas from the fluidized bed reactor to heat at least one of a fluidizing gas, reactant gas, silicon feed particles, or an aqueous medium. | 04-21-2016 |
20160167971 | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON | 06-16-2016 |