Entries |
Document | Title | Date |
20080233035 | Method of Selecting Silicon Having Improved Performance - Chemical grade silicon metalloid having improved performance in the direct process for making organohalosilanes is selected by (A) measuring the temperature of each batch of silicon metalloid during both the refing and the casting of the silicon metalloid; (B) measuring the elemental impurity levels in each batch of the silicon metalloid after refining of the silicon metalloid; (C) predicting the properties of the slag phase produced during refining of the silicon metalloid, based on equilibrium calculations, using the elemental impurity levels and the measured temperatures of each batch of silicon metalloid; and (D) selecting a chemical grade silicon metalloid for use in the direct process for making organohalsilanes, based upon the predicted slag properties; such that the slag density, the viscosity, and the melting point of the slag, are within acceptable and predetermined ranges for each individual batch. | 09-25-2008 |
20080233036 | PRODUCTION PROCESS FOR HIGH PURITY SILICON - The production process for high purity silicon of the present invention comprises (1) a step in which metal silicon is reacted with hydrogen chloride gas, (2) a step in which a reaction product obtained is distilled to obtain silicon tetrachloride, (3) a step in which silicon tetrachloride obtained is reacted with zinc gas in a gas phase to produce high purity silicon, (4) a step in which zinc chloride by-produced is reacted with hydrogen gas and (5) a step in which zinc and hydrogen chloride are separated and recovered from a reaction product obtained, wherein zinc separated and recovered in the step (5) is used as a raw material for zinc gas in the step (3), and hydrogen chloride separated and recovered in the step (5) is used as a raw material for hydrogen chloride gas in the step (1). | 09-25-2008 |
20080241045 | Method for Producing High Purity Silicon - An object of the invention is to provide a method for producing a large amount of inexpensive high purity silicon useful for a solar battery. Disclosed is a method for producing high purity silicon by migrating impurities in silicon to slag including performing a first slag purification of a first silicon, separating the slag from the first silicon after finishing the first slag purification, and feeding the separated slag to a second molten silicon in a second purification of the second silicon, wherein purity of said second silicon prior to purification is lower than purity of the first silicon after purification. | 10-02-2008 |
20080292523 | SILICON SINGLE CRYSTAL WAFER AND THE PRODUCTION METHOD - A production method of a silicon single crystal wafer capable of effectively bringing out a gettering effect also in a thin film device is provided: wherein a thermal treatment with rapid heating up and down is performed for 10 seconds or shorter on a silicon single crystal wafer obtained by processing a single crystal grown by the Czochralski method and having an initial interstitial oxygen density is 1.4×10 | 11-27-2008 |
20080311019 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 12-18-2008 |
20090047203 | METHOD FOR PRODUCING MONOCRYSTALLINE METAL OR SEMI-METAL BODIES - The invention relates to the production of bulky monocrystalline metal or semi-metal bodies, in particular of a monocrystalline Si ingot, using the vertical gradient freeze (VGF) method by directional solidification of a melt in a melting crucible having a polygonal basic shape. | 02-19-2009 |
20090060821 | METHOD FOR MANUFACTURING SILICONE WAFERS - The method of manufacturing silicon wafers from one or more silicon blocks or bricks includes etching at least one lateral surface of a silicon block or brick using a mixture of highly oxidative acids and then forming a plurality of wafers by sawing the silicon block or brick. During the etching of the lateral surface a mean amount of material removed is 3 to 160 μm thick and the material is isotropically removed with a constant mean material removal speed of from 1 to 20 μm/min across the entire lateral surface. Prior to the etching treatment the silicon block or brick is advantageously subjected to an abrasive grinding or polishing. The mixture of acids is preferably a mixture of 50 to 70% nitric and 40 to 60% hydrofluoric acids in a ratio range of 8:1 to 4:1. | 03-05-2009 |
20090081107 | Protective barrier for poles, posts, and timbers composed of self-fusing silicone - This invention is the utilization of self-fusing silicone to create a continuous protective barrier for wood or composite poles, posts, or similar structures. The insulating properties of silicone will provide some fire protection, while the self-fusing characteristic of the material will create a completely sealed barrier. This protective silicone layer may be used over a primary layer with different properties to achieve a barrier with more target specific characteristics. | 03-26-2009 |
20090191112 | METHOD AND APPARATUS FOR FABRICATING HIGH PURITY SILICON COMPACTS USING SILICON POWDERS, AND BINDER-FREE SILICON COMPACT FABRICATED BY THE SAME - Disclosed are a method and an apparatus for fabricating solar-grade high purity polycrystalline silicon compacts. Silicon compacts are fabricating by loading polycrystalline silicon powders into a mold without addition of binders in a vacuum atmosphere, and pressurizing and heating the polycrystalline silicon powders. Heating method includes a high-frequency induction heating type, an Ohmic heating type, and a high current supply type. | 07-30-2009 |
20090208400 | METHOD AND CRUCIBLE FOR DIRECT SOLIDIFICATION OF SEMICONDUCTOR GRADE MULTI-CRYSTALLINE SILICON INGOTS - This invention relates to a method for direct solidification of semiconductor grade multi-crystalline silicon ingots allowing improved control with the solidification process and reduced levels of oxygen and carbon impurities in the ingot, by crystallizing the semiconductor grade silicon ingot, optionally also including the melting of the feed silicon material, in a crucible made of silicon nitride, or in a crucible made of a composite of silicon carbide and silicon nitride, and where the wall thickness of the bottom of the crucible is dimensioned such that the thermal resistance across the bottom is reduced to a level of at least the same order as thermal resistance across the support below carrying the crucible or lower. The invention also relates to crucibles which are made of silicon nitride, or of a composite of silicon carbide and silicon nitride, and where the wall thickness of the bottom of the crucible is dimensioned such that the thermal resistance across the bottom is reduced to a level of at least the same order as thermal resistance across the support below carrying the crucible or lower. | 08-20-2009 |
20090280049 | PURIFYING METHOD FOR METALLIC SILICON AND MANUFACTURING METHOD OF SILICON INGOT - In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period. | 11-12-2009 |
20090311160 | Silicon single crystal and method of producing the same - The present invention provides a silicon single crystal comprising a seed crystal, a narrowed portion whose diameter decreases, and at its lower end, a neck portion, wherein in a front projection view, the contour of the narrowed portion is located inside the straight line connecting the contour of the lower end of the seed crystal to the contour of the upper end of the neck portion, and the contour of the neck portion is made to be a tangent at the lower end of the narrowed portion. At this time, the length L of the narrowed portion in a pulling direction and the difference d between the radius of the seed crystal and the radius of the narrowed portion relative to the diameter W of the seed crystal is appropriately adjusted and further the contour of the narrowed portion is desirably formed with any one of parabolas, circular arcs and elliptic arcs. Configuring the contour of the narrowed portion in this manner makes it possible to remove dislocations from the neck portion with a high success rate, shorten a pulling time of the silicon single crystal and improve the dislocation free ratio. | 12-17-2009 |
20090311161 | METHOD AND CONFIGURATION FOR MELTING SILICON - A process for melting silicon, in which silicon bodies ( | 12-17-2009 |
20100034723 | METHOD AND APPARATUS FOR REFINING A MOLTEN MATERIAL - A method for the directional solidification of silicon or other materials. A cooled plate is lowered into a silicon melt and an ingot of solid silicon is solidified downwards. | 02-11-2010 |
20100040525 | Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby - Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal. | 02-18-2010 |
20100047148 | Skull reactor - A method for producing silicon or a reactive metal is disclosed herein that includes:
| 02-25-2010 |
20100055020 | Apparatus and Method for a Crucible Design and Tipping Mechanism for Silicon Casting - This invention relates to an apparatus and a method of a crucible design and a tipping mechanism used to cast silicon. The crucible of this invention produces high purity silicon for solar cells and/or solar modules, such as by improving quality and/or reducing impurities in the cast silicon. As impurities concentrate in an uncrystallized portion of the silicon, a portion of the remaining molten silicon is poured or decanted from the main portion of the crucible to a second portion of the crucible. | 03-04-2010 |
20100061916 | High Temperature Support Apparatus and Method of Use for Casting Materials - This invention relates to a system and a method of use for large ceramic member support and manipulation at elevated temperatures in non-oxidizing atmospheres, such as using carbon-carbon composite materials for producing high purity silicon in the manufacture of solar modules. The high temperature apparatus of this invention includes one or more support ribs, one or more cross braces in combination with the one or more support ribs, and a shaped support liner positionable upon the one or more support ribs and the one or more cross braces. | 03-11-2010 |
20100074825 | DIRECTIONAL SOLIDIFICATION FURNACE FOR REDUCING MELT CONTAMINATION AND REDUCING WAFER CONTAMINATION - A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon. | 03-25-2010 |
20100086464 | NANOSTRUCTURE ARRAYS AND METHODS FOR FORMING SAME - A method for forming an array of elongated nanostructures includes in one embodiment, providing a member having a top surface, forming a plurality of pores in the member having an upper portion opening onto the top surface and a lower portion to form a template, and the upper portion being sized greater than the lower portion, introducing a catalyst in the lower portion of the plurality of pores and below the upper portion, and growing a plurality of elongated nanostructures from the catalyst spaced from the sides of the upper portion of the plurality of pores. | 04-08-2010 |
20100086465 | APPARATUS AND METHOD FOR MANUFACTURING SILICON SUBSTRATE, AND SILICON SUBSTRATE - In a fabrication zone where a silicon ribbon | 04-08-2010 |
20100124527 | SYSTEM AND METHOD FOR PRODUCTION OF HIGH PURITY SILICON SOLIDS AND SOLIDS THEREFROM - Systems and methods and resulting compositions of matter including silicon solids from a mixture of silicon and water. The mixture is collected at a collection stage from at least one wafer abrasion process performed on a silicon surface having an impurity concentration ≦0.1 ppb and extracting one portion of the water from the mixture using at least one dryer stage to form a dry cake. The dry cake includes at least 99.99% silicon by weight excluding water and non-silicon species, where a concentration of water in the dry cake is between 0.05% and 1% by weight, and where a concentration of non-silicon species in the dry cake is between 0.05% and 1% by weight. | 05-20-2010 |
20100124528 | HIGH-STRENGTH COLUMNAR CRYSTAL SILICON PART OF PLASMA ETCHING DEVICE CONSISTING THEREOF - The present invention relates to a columnar crystal silicon having a high strength. In the case where plasma etching device parts such as a focus ring, an upper electrode plate, and a shield ring which are formed from a high-strength columnar crystal silicon ingot having an interstitial oxygen concentration within a range of 1×10 | 05-20-2010 |
20100129282 | High-purity calcium compounds - A calcium product contains, in dry state, at least 97% by weight of a calcium compound selected from the group consisting of calcium oxide, calcium hydroxide, calcium sulfate (up to 3% by weight, preferably less) and calcium carbonate, and less than or equal to 4.2 ppm by weight of phosphorus with respect to calcium content and less than or equal to 1.4 ppm by weight of boron with respect to calcium content. | 05-27-2010 |
20100135888 | Purification of Silicon by Electric Induction Melting and Directional Partial Cooling of the Melt - The present invention is apparatus for, and method of, purification of silicon by electric induction heating and melting of silicon in a crucible or susceptor vessel, with subsequent directional partial cooling of the silicon melt to an initial amorphous-to-crystalline (solidification) temperature to produce a directionally solidified purified quantity of silicon and a separate quantity of high impurity silicon. The quantity of high impurity silicon is removed from the vessel and the purified quantity of silicon at solidification temperature is remelted in the vessel for removal from the vessel or further processing. | 06-03-2010 |
20100158783 | Process and Apparatus for Producing a Single Crystal of Semiconductor Material - A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt. | 06-24-2010 |
20100189622 | Recovery method of silicon slurry - In slicing a crystal bar into silicon wafers, an average of about 40% of silicon would be loss due to the widths of slicing wire saws themselves. The fact that the silicon slurry is discarded or discarded after recovering silicon carbide particles causes a large waste of cost. According to the present invention, the silicon slurry undergoes an acid washing step and a high temperature separation step, wherein the heating temperature is between the melting points of silicon and silicon carbide, and the silicon slurry is resident for an appropriate time, such that the silicon and silicon carbide would be separated to obtain silicon. The present invention could recover the raw material used in solar crystals, further capable of increasing the silicon crystal production and lowering the cost. | 07-29-2010 |
20100254878 | PROCESS FOR WINNING PURE SILICON - Process for winning pure silicon comprising the following steps: Providing a suspension, which exhibits at least some contaminated silicon particles, and guiding the suspension through at least one microstructure apparatus. | 10-07-2010 |
20100290971 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP. | 11-18-2010 |
20100310445 | Process Control For UMG-Si Material Purification - A process control method for UMG-Si purification by performing a directional solidification of molten UMG-Si to form a silicon ingot is described. The ingot is divided into bricks and the resistivity profile of each silicon brick is mapped. A crop line for removing the impurities concentrated and captured in the ingot during the directional solidification is calculated based on the resistivity map. The concentrated impurities are then removed by cropping each brick along that brick's calculated crop line. | 12-09-2010 |
20110002835 | Methods For Pulling A Multicrystalline Silicon Ingot From A Silicon Melt - Methods for producing muticrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots. | 01-06-2011 |
20110038779 | MULTI-STAGE SYSTEM FOR REACTION AND MELT COALESCENCE AND SEPARATION - In one embodiment, the present invention relates generally to a multi-stage system for performing melt coalescence and separation, the multi-stage system. In one embodiment, the multi-stage system includes a first container for mixing a powder with a salt, the first container having an opening, a heating means coupled to the first container for heating the first container and a second container coupled to the first container. | 02-17-2011 |
20110059004 | System and Method for Controlling the System for the Production of Polycrystalline Silicon - A system and a method for the production of polycrystalline silicon according to the monosilane process are disclosed. At least one reactor ( | 03-10-2011 |
20110070143 | Hydrogenation Of Polysilicon Nanowires - An apparatus and method for improving the electrical conductivity of a thermoelectric material, particularly a material comprising polysilicon nanowires. The method comprises hydrogenation of the device to improve the electrical conductivity of the device with negligible change to the thermal conductivity. Hydrogenation of the thermoelectric device may be accomplished using several techniques, including UV-assisted hydrogenation in a vacuum chamber. | 03-24-2011 |
20110076221 | METHOD OF RECYCLING SILICON COMPONENT FOR PLASMA ETCHING APPARATUS AND SILICON COMPONENT FOR PLASMA ETCHING APPARATUS - A method of recycling a silicon component for a plasma etching apparatus includes a collecting process of collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; a measurement process of obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; an input amount determination process of determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; and a silicon ingot manufacturing process of manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity based on the input amounts determined in the input amount determination process into a crucible. | 03-31-2011 |
20110129403 | Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals - Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting. | 06-02-2011 |
20110129404 | SYSTEM AND PROCESS FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON FOR PHOTOVOLTAIC USE - The invention relates to an apparatus and process for the production of polycrystalline silicon for photovoltaic applications. The apparatus is characterized in that it comprises of multiple chambers, preferably three, arranged longitudinally one after the other and equipped with: gas immission and extraction means; means for guiding and moving the crucible containing the silicon-based material; insulation and temperature control means; heating means; air-tightness means for each chamber. One of said chambers constitutes the furnace of the apparatus and comprises an area in which the smelting of the material contained in the crucible is carried out, said furnace being equipped with heating means and bearing a heat-stable pedestal, suitable for moving the crucible vertically and thus for introducing it into, or extracting it from the smelting area, respectively. | 06-02-2011 |
20110129405 | METHOD FOR PURIFYING SILICON - The present invention provides for methods of purifying silicon, methods for obtaining purified silicon, as well as methods for obtaining purified silicon crystals, purified granulized silicon and/or purified silicon ingots. | 06-02-2011 |
20110158887 | Apparatus and method of use for casting system with independent melting and solidification - This invention relates to a two or three-stage apparatus and method of use to produce high purity silicon, such as for use in solar panels and/or photovoltaics. The device of this invention includes a melting apparatus with a delivery device, a holding apparatus with a tipping or transfer mechanism, and at least one solidification apparatus for receiving a molten feedstock. The optimized designs of individual apparatuses function efficiently in combination to produce high purity silicon. | 06-30-2011 |
20110200514 | METHOD FOR PURIFYING METALLURGICAL SILICON FOR SOLAR CELLS - The present invention provides a method for forming high quality silicon material, e.g., polysilicon. The method includes transferring a raw silicon material in a crucible having an interior region. The crucible is made of a quartz or other suitable material, which is capable of withstanding a temperature of at least 1400 Degrees Celsius. The method includes subjecting the raw silicon material in the crucible to thermal energy to cause the raw silicon material to be melted into a liquid state to form a melted material at a temperature of less than about 1400 Degrees Celsius. Preferably, the melted material has an exposed region bounded by the interior region of the crucible. The method also includes subjecting an exposed inner region of the melted material to an energy source comprising an arc heater configured above the exposed region and spaced by a gap between the exposed region and a muzzle region of the arc heater to cause formation of determined temperature profile within a vicinity of an inner region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. Preferably, the method removes one or more impurities from the melted material to form a higher purity silicon material in the crucible. | 08-18-2011 |
20110212011 | REACTOR AND METHOD FOR PRODUCING HIGH-PURITY GRANULAR SILICON - The present invention provides a reactor and a method for the production of high purity silicon granules. The reactor includes a reactor chamber; and the reaction chamber is equipped with a solid feeding port, auxiliary gas inlet, raw material gas inlet, and exhaust gas export. The reaction chamber is also equipped with an internal gas distributor; a heating unit; an external exhaust gas processing unit connected between a preheating unit and a gas inlet. The reaction chamber is further equipped with a surface finishing unit, a heating unit and a dynamics generating unit. The reaction is through decomposition of silicon containing gas in densely stacked high purity granular silicon layer reaction bed in relative motion, and to use remaining hear of exhaust gas for reheating. The present invention is to achieve a large scale, efficient, energy saving, continuous, low cost production of high purity silicon granules. | 09-01-2011 |
20110236290 | METHOD FOR PROCESSING SILICON POWDER TO OBTAIN SILICON CRYSTALS - Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid. | 09-29-2011 |
20110250118 | METHOD FOR PRODUCING HIGH PURITY SILICON - The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3. | 10-13-2011 |
20110262337 | MEHTOD FOR ELIMIINATING BORON IMPURITIES IN METALLURGICAL SILICON - The present invention discloses a method for eliminating boron impurities in metallurgical silicon which includes the following steps: the metallurgical silicon powders being immersed in acid for 6˜48 hours is then washed and heatedly dried; silicon powders being acid cleaned, washed and heated in the first step is heated to 300° C.˜700° C. in the reactor and fed in oxidizing gas for oxidation reaction, wherein the reaction time is 6˜72 hours. The Silicon powders being heatedly oxidized are immersed in water or acid for 1˜6 hours and then washed clean; the silicon powders being immersed and washed is baked at 100° C. ˜300° C. for 6˜24 hours; whereas the metallurgical silicon purification art of the present invention is done at lower temperature, the operation is easier while lowering down the purification cost to provide good material for next work steps thereby satisfying the demands for low cost solar grade polycrystalline silicon productions. | 10-27-2011 |
20110280784 | Methods for Casting By a Float Process and Associated Apparatuses - A method for producing a solid layer material ( | 11-17-2011 |
20110286906 | Flowable Chips and Methods for the Preparation and Use of Same, and Apparatus for Use in the Methods - A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems. | 11-24-2011 |
20110293500 | APPARATUS AND PROCESS FOR TREATMENT FOR IMMISCIBLE LIQUIDS - The present invention relates to an apparatus for continuous treatment of two immiscible molten liquids having different densities. The apparatus comprises at least one open-ended helical reaction channel ( | 12-01-2011 |
20110305622 | DEVICE AND METHOD FOR THE PRODUCTION OF SILICON BLOCKS - A device for the production of silicon blocks comprises a vessel for receiving a silicon melt, the vessel comprising a vessel wall comprising at least one side wall and a bottom as well as an inside and an outside and a central longitudinal axis, and means for creating a temperature field on the inside of the bottom, the temperature field having a temperature gradient at the bottom of the vessel which is perpendicular to the central longitudinal axis at least in some regions when the silicon melt cools down for crystallization. | 12-15-2011 |
20120020865 | METHOD AND APPARATUS FOR PURIFYING METALLURGICAL SILICON FOR SOLAR CELLS - A method for improving yield of an upgraded metallurgical-grade (UMG) silicon purification process is disclosed. In the UMG silicon (UMGSi) purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time, including: a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for purification processes is also disclosed, which allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor. | 01-26-2012 |
20120027660 | METHODS TO RECOVER AND PURIFY SILICON PARTICLES FROM SAW KERF - The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material. | 02-02-2012 |
20120034146 | CARRIER FLUIDS FOR ABRASIVES - The invention relates to improved novel carrier fluids for abrasives, in particular cutting fluids, for wafer production, the use thereof and a method of cutting wafers. | 02-09-2012 |
20120034147 | METHOD FOR CLEANING SILICON SLUDGE - After removing organic matters and forming a silicon oxide film by ozone-oxidizing a silicon powder in silicon sludge, the ozone is removed and the resulting sludge is dispersed into hydrochloric acid for dissolving metal impurities thereinto. Then, the supernatant liquid of the hydrochloric acid is removed, and the silicon oxide film is dissolved with hydrofluoric acid after being rinsed with ultrapure water, so that the metal impurities in the surface layer of the silicon powder are removed. | 02-09-2012 |
20120039786 | Silicon Wafer and Method For Producing It - Silicon wafers having an oxygen concentration of 5·10 | 02-16-2012 |
20120076715 | NOVEL BONDING PROCESS AND BONDED STRUCTURES - A sealing and bonding material structure for joining semiconductor wafers having monolithically integrated components. The sealing and bonding material are provided in strips forming closed loops. There are provided at least two concentric sealing strips on one wafer. The strips are laid out so as to surround the component(s) on the wafers to be sealed off when wafers are bonded together. The material in the strips is a material bonding the semiconductor wafers together and sealing off the monolithically integrated components when subjected to force and optionally heating. A monolithically integrated electrical and/or mechanical and/or fluidic and/or optical device including a first substrate and a second substrate, bonded together with the sealing and bonding structure, and a method of providing a sealing and bonding material structure on at least one of two wafers and applying a force and optionally heat to the wafers to join them are described. | 03-29-2012 |
20120100058 | PROCESS FOR PRODUCING SILICON, SILICON, AND PANEL FOR SOLAR CELLS - A process for producing silicon which comprises: bringing molten silicon containing an impurity into contact with molten salt in a vessel to react the impurity contained in the molten silicon with the molten salt; removing the impurity from the system. | 04-26-2012 |
20120107219 | APPARATUS AND METHOD FOR PRODUCING PURIFIED HYDROGEN GAS BY A PRESSURE SWING ADSORPTION PROCESSES - The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower. | 05-03-2012 |
20120156123 | WATER-SOLUBLE CUTTING FLUID FOR SLICING SILICON INGOTS - A water-soluble cutting fluid for slicing silicon ingots is characterized in that it includes a monoprotic or diprotic aliphatic carboxylic acid (A) having a carbon number (including the carbon in the carbonyl group) of 4˜10, and either a polyprotic organic acid (B) with ΔpKa of 0.9˜2.3 as defined by the following formula (1) or a salt (BA) of said organic acid (B) as essential components: | 06-21-2012 |
20120164054 | Impurity Reducing Process and Purified Material - This invention relates to a process for reducing impurities, such as contaminants in silicon suitable for use in solar cells or solar modules. The process includes the step of melting a feedstock with impurities and the step of adding an impurity-removing agent to the feedstock. The process also includes the step of reacting the impurities with the impurity-removing agent to form a high-temperature solid, and the step of separating the high-temperature solid from the feedstock. | 06-28-2012 |
20120164055 | METHOD OF REMOVAL OF IMPURITIES FROM SILICON - A method for the purification of metallurgical grade silicon is provided, which can be used to produce high purity silicon up to and including solar grade. The process relies on alloying and controlled solidification of Si with another metal, such as copper, zinc, iron, tin, nickel and aluminum, to produce purified platelets of Si, while the impurities are trapped in a getter alloy. The Si platelets are then separated from the solidified alloy by a physical separation technique such as gravity or magnetic separation. The separated grains of Si may then be further cleaned by acid leaching. Pre-refining of metallurgical grade silicon or post-refining of the product may be performed, depending on the initial impurity content of the feedstock, to obtain Si that meets solar grade requirements. | 06-28-2012 |
20120177558 | APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING A REDUCED AMOUNT OF BORON COMPOUNDS BY VENTING THE SYSTEM WITH AN INERT GAS - The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units. | 07-12-2012 |
20120230902 | Electromagnetic Casting Apparatus for Silicon - This invention aims at providing a silicon electromagnetic casting apparatus for accurate and easy manufacturing of high quality silicon ingots. This apparatus uses a furnace vessel | 09-13-2012 |
20120244061 | Electromagnetic Casting Apparatus for Silicon - The present invention aims at providing a silicon electromagnetic casting apparatus which can prevent the outward deflection of a crucible | 09-27-2012 |
20120251425 | CASCADING PURIFICATION - The present invention provides a method of purifying a material using a cascading dissolution and washing process. The dissolution and washing processes can contain single or multiple stages. Water and dissolving chemicals are recycled through the process towards the beginning of the process. | 10-04-2012 |
20120251426 | Polycrystalline Silicon For Solar Cell And Preparation Method Thereof - The present invention provides a process for preparing a polycrystalline silicon having the surface layer in which the areas having a short carrier lifetime due to Fe has been substantially eliminated. A preparation method of polycrystalline silicon comprising preparing a mold evenly applied with a mold release agent produced by mixing a binder and a solvent with a silicon nitride powder and then solidifying a molten silicon in said mold, wherein x≦5.0, 20≦y≦100 and x×y≦100 are satisfied given that x represents a concentration of Fe (atomic ppm) contained as impurity in the silicon nitride powder and y represents a thickness of the mold release agent (μm) applied to the mold. | 10-04-2012 |
20120269712 | SYSTEM AND METHOD FOR MANUFACTURING POLYCRYSTAL SILICON - A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more. | 10-25-2012 |
20120275985 | METHOD FOR PURIFYING METALLURGICAL SILICON FOR SOLAR CELLS - A method includes transferring a raw silicon material in a crucible and subjecting the raw silicon material in the crucible to thermal energy to form a melted silicon material at a temperature of less than 1400 Degrees Celsius, the melted silicon material having an exposed region bounded by an interior region of the crucible, subjecting an exposed inner region of the melted silicon material to an energy source to include an arc heater configured above the exposed region and to be spaced by a gap between the exposed region and a muzzle region of the arc heater to form a determined temperature profile within a vicinity of an inner region of the exposed melted silicon material while maintaining outer regions of the melted silicon material at a temperature below a melting point of the crucible, and removing impurities from the melted silicon material to form higher purity silicon. | 11-01-2012 |
20120282162 | AUTOMATED VISION SYSTEM FOR A CRYSTAL GROWTH APPARATUS - Various embodiments of a method for producing a crystalline material in a crucible in a crystal growth apparatus are disclosed. The method comprises, in part, the step of monitoring for remaining solid feedstock in a liquid feedstock melt with an automated vision system positioned above the crucible. Alternatively, or in addition, the method comprises the step of monitoring for solidified crystalline material in a partially solidified melt with the automated vision system. A crystal growth apparatus comprising the automated vision system is also disclosed. | 11-08-2012 |
20120288432 | APPARATUS FOR MANUFACTURING SINGLE CRYSTAL SILICON INGOT HAVING REUSABLE DUAL CRUCIBLE FOR SILICON MELTING - The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible. | 11-15-2012 |
20120301386 | SILICON INGOT HAVING UNIFORM MULTIPLE DOPANTS AND METHOD AND APPARATUS FOR PRODUCING SAME - A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method. | 11-29-2012 |
20120321541 | Methods for Refining Aluminum-Containing Silicon - A method for refining aluminum-containing silicon is provided and includes heating an aluminum-containing silicon to form a molten aluminum-containing silicon, adding a source of calcium selected from the group consisting of calcium, calcium oxide, and calcium carbonate, and, optionally silica to the aluminum-containing silicon; and exposing the molten aluminum-containing silicon to oxygen to produce a refined silicon and a by-product slag such that the refined silicon contains an amount of aluminum less than the amount of aluminum in the aluminum-containing silicon. | 12-20-2012 |
20130011320 | METHOD FOR PURIFYING SILICON - A method for purifying silicon includes adding molten Na | 01-10-2013 |
20130017139 | Methods and Systems For Monitoring and Controlling Silicon Rod Temperature - Systems and methods are disclosed for monitoring and controlling silicon rod temperature. One example is a method of monitoring a surface temperature of at least one silicon rod in a chemical vapor deposition (CVD) reactor during a CVD process. The method includes capturing an image of an interior of the CVD reactor. The image includes a silicon rod. The image is scanned to identify a left edge of the silicon rod and a right edge of the silicon rod. A target area is identified midway between the left edge and the right edge. A temperature of the silicon rod in the target area is determined. | 01-17-2013 |
20130017140 | METHOD FOR PROCESSING SILICON POWDER TO OBTAIN SILICON CRYSTALS - Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid. | 01-17-2013 |
20130028825 | MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT - A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X<30 mm) in hight, a second region from X to Y (30 mm≦Y<100 mm), and a third region of the Y or higher, with the bottom of the crucible as a datum, a solidification rate V1 in the first region is in a range of 10 mm/h≦V1≦20 mm/h, and a solidification rate V2 in the second region is in a range of 1 mm/h≦V2≦5 mm/h. | 01-31-2013 |
20130064751 | METHOD FOR PRODUCING HIGH PURITY SILICON - A process of producing high-purity silicon includes providing silicon-containing powder, feeding the silicon-containing powder into a gas stream, where the gas has a temperature sufficiently high to convert particles of metallic silicon from a solid state into a liquid and/or gaseous state, collecting and, optionally, condensing the liquid and/or gaseous silicon formed, and cooling the collected liquid and/or condensed silicon in a casting mold, | 03-14-2013 |
20130095027 | CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm. | 04-18-2013 |
20130095028 | CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds. | 04-18-2013 |
20130171052 | Process for Removing Nonmetallic Impurities from Metallurgical Silicon - The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner. | 07-04-2013 |
20130177493 | POLYCRYSTALLINE SILICON - The invention provides polycrystalline silicon having concentrations of dopants of 1-10 ppta of boron, 1-20 ppta of phosphorus, 1-10 ppta of arsenic, 0.01-1 ppta of aluminum, and having a charge carrier lifetime of at least 2000 and at most 4500 μs. | 07-11-2013 |
20130189176 | LOW-DOPANT POLYCRYSTALLINE SILICON CHUNK - The invention provides a polycrystalline silicon chunk having a concentration of 1-50 ppta of boron and 1-50 ppta of phosphorus at the surface. | 07-25-2013 |
20130216466 | CHUNK POLYCRYSTALLINE SILICON AND PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS - The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw. | 08-22-2013 |
20130236386 | COOLING AND/OR LUBRICATING FLUIDS FOR WAFER PRODUCTION - The invention relates to the use of modified polyglycols for production of cooling and/or lubricating fluids, to novel cooling and/or lubricating fluids, to the use of the cooling and/or lubricating fluids in the removal of material, especially in the cutting of wafers, and to wafers produced with the aid of the cutting fluid. | 09-12-2013 |
20130323153 | SILICON SINGLE CRYSTAL WAFER - The present invention provides a silicon single crystal wafer sliced out from a silicon single crystal ingot grown by a Czochralski method, wherein the silicon single crystal wafer is sliced out from the silicon single crystal ingot having oxygen concentration of 8×10 | 12-05-2013 |
20140004030 | POLYCRYSTALLINE SILICON PORTION AND METHOD FOR BREAKING A SILICON BODY | 01-02-2014 |
20140050649 | Methods Apparatus for Manufacturing Geometric Multi-Crystalline Cast Materials - Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm. | 02-20-2014 |
20140178286 | DEVICE FOR REMOVING LIQUID SILICON FROM A CRUCIBLE - A device for taking up a silicon melt comprises at least one block of a refractory with a capillary structure. | 06-26-2014 |
20140294712 | SILICON COMPONENT FOR PLASMA ETCHING APPARATUS - A silicon component in a processing chamber for performing an etching process on a substrate is provided. The silicon component contains recycled silicon obtained by a silicon component recycling method including: collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity into a crucible; and manufacturing the final product using the silicon ingot. | 10-02-2014 |
20150017086 | SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURE THEREOF - A silicon single crystal manufacturing method includes: applying a transverse magnetic field to a melt of polysilicon with a carbon concentration of at most 1.0×10 | 01-15-2015 |
20150044119 | COLD FILAMENT IGNITION SYSTEM AND METHOD OF SILICON RODS - A method and system of igniting one or more filaments for silicon production includes applying an output voltage to the one or more filaments using a transformer connected with the one or more filaments. In addition, the method includes supplying, in combination with the application of the output voltage, a current to a primary winding of the transformer via a choke to limit the current to a first predetermined current threshold range. The combination of the supplied current and applied output voltage allows a predetermined output range to be generated from a power supply device initially required to ignite the one or more filaments. | 02-12-2015 |
20150056122 | POLISHING COMPOSITION, MANUFACTURING PROCESS THEREFOR, PROCESS FOR PRODUCTION OF SILICON SUBSTRATE, AND SILICON SUBSTRATE - A polishing composition is composed of a filtered diluted liquid obtained through an undiluted liquid-preparing step, an undiluted liquid-filtering step, a diluting step, and a diluted liquid-filtering step. In the undiluted liquid-preparing step, an undiluted liquid is prepared by mixing raw materials for the polishing composition. In the undiluted liquid-filtering step, the undiluted liquid is filtered. In the diluting step, the filtered undiluted liquid is diluted to obtain a diluted liquid. In the diluted liquid-filtering step, the diluted liquid is filtered. The polishing composition is used, for example, for polishing a silicon substrate material to produce a silicon substrate. | 02-26-2015 |
20150056123 | POLYCRYSTALLINE SILICON INGOT, PREPARATION METHOD THEREOF, AND POLYCRYSTALLINE SILICON WAFER - Disclosed is a preparation method of a polycrystalline silicon ingot. The preparation method comprises: providing a silicon nucleation layer at the bottom of a crucible, and filling a silicon material above the silicon nucleation layer; heating the silicon material to melt same, adjusting the thermal field inside the crucible to make the melted silicon material to start crystallization on the basis of the silicon nucleation layer; and when the crystallization is finished, performing annealing and cooling to obtain a polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot. Further disclosed are a polycrystalline silicon ingot obtained through the preparation method and a polycrystalline silicon wafer made using the polycrystalline silicon ingot as a raw material. | 02-26-2015 |
20150086464 | METHOD OF PRODUCING MONOCRYSTALLINE SILICON - A method of producing a crystalline product comprising a high percentage by volume monocrystalline material in a crystal growth apparatus is disclosed. The method comprises the steps of providing a crucible comprising feedstock and at least one monocrystalline seed, melting the feedstock without substantially melting the monocrystalline seed under controlled conditions, and forming the crystalline product by solidification of the melt also under controlled conditions. The resulting crystalline product comprises greater than 50% by volume monocrystalline material. | 03-26-2015 |
20150147258 | SINGLE CRYSTAL SILICON INGOT AND WAFER, AND APPARATUS AND METHOD FOR GROWING SAID INGOT - The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region. | 05-28-2015 |
20150329366 | IMPROVING OPERATION OF FLUIDIZED BED REACTORS BY OPTIMIZING TEMPERATURE GRADIENTS VIA PARTICLE SIZE DISTRIBUTION CONTROL - A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance. | 11-19-2015 |
20150336802 | METHOD OF PURIFYING SILICON - A method comprises forming a first molten liquid from a solvent metal and sodium carbonate, contacting the first molten liquid with silicon to form a second molten liquid, cooling the second molten liquid to provide silicon crystals and a mother liquor, and separating the silicon crystals from the mother liquor. | 11-26-2015 |
20150368114 | FLUX COMPOSITION USEFUL IN DIRECTIONAL SOLIDIFICATION FOR PURIFYING SILICON - The present invention provides for a flux composition, and the use thereof in a directional solidification for the purification of silicon. | 12-24-2015 |
20150376017 | METHOD FOR PURIFYING SILICON - A method that includes: (a) forming a molten liquid from a solvent metal, silicon, and an alkali magnesium halide; (b) cooling the molten liquid to provide silicon crystals and a mother liquor; and (c) separating the silicon crystals from the mother liquor. | 12-31-2015 |
20160032483 | SILICON BLOCK, METHOD FOR PRODUCING THE SAME, CRUCIBLE OF TRANSPARENT OR OPAQUE FUSED SILICA SUITED FOR PERFORMING THE METHOD, AND METHOD FOR THE PRODUCTION THEREOF - A method for producing a solar crucible includes providing a crucible base body of transparent or opaque fused silica having an inner wall, providing a dispersion containing amorphous SiO | 02-04-2016 |
20160045940 | CLEANING OF CVD PRODUCTION SPACES - Contamination of surfaces of polysilicon rods removed from a Siemens reactor in a polysilicon production facility is reduced by cleaning the production facility at least every other week with a cleaning liquid containing water, optionally also containing neutral surfactants. | 02-18-2016 |
20160052790 | CHUNK POLYCRYSTALLINE SILICON AND PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS - The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw. | 02-25-2016 |
20160075563 | Hyperuniform and Nearly Hyperuniform Random Network Materials - This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like. | 03-17-2016 |
20160086839 | Method For The Production Of A Wafer With A Carrier Unit - The invention relates to a method for the production of layers of solid material, in particular for use as wafers, comprising the following steps: providing a workpiece ( | 03-24-2016 |
20160130722 | METHOD OF MANUFACTURING A SILICON INGOT AND SILICON INGOT - A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period. | 05-12-2016 |
20160152479 | SILICON FOCUS RING | 06-02-2016 |
20160152480 | APPARATUS FOR PRODUCING Si NANOPARTICLES USING MICROWAVE PLASMA AND PRODUCTION METHOD USING THE SAME | 06-02-2016 |
20160152481 | PRIMARY DISTILLATION BORON REDUCTION | 06-02-2016 |
20160160388 | SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR - A silicon single crystal ingot and a wafer for a semiconductor in one embodiment include a transition region which dominantly has a crystalline defect having a size of 10 nm to 30 nm among the crystalline defects included in an interstitial dominant defect-free region. The difference between the initial oxygen concentration before performing at least one heat treatment to the ingot and the wafer and the final oxygen concentration after performing at least one heat treatment is 0.5 ppma or less. | 06-09-2016 |
20160194782 | CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME | 07-07-2016 |
20160200571 | HYDROGEN PRODUCTION APPARATUS, HYDROGEN PRODUCTION METHOD, SILICON FINE PARTICLES FOR HYDROGEN PRODUCTION, AND PRODUCTION METHOD FOR SILICON FINE PARTICLES FOR HYDROGEN PRODUCTION | 07-14-2016 |