| Entries |
| Document | Title | Date |
|---|
| 20080232419 | Laser array chip, laser module, manufacturing method for manufacturing laser module, manufacturing method for manufacturing laser light source, laser light source, illumination device, monitor, and projector - A laser array chip includes: a plurality of emission sections emitting laser lights; and a weak section formed in a portion in the thickness direction of at least a portion of the areas between the emission sections, whose strength is weaker than the strength of areas in which the emission sections are formed. | 09-25-2008 |
| 20080240196 | Surface emitting laser array, method for manufacturing the same, and semiconductor device - A surface emitting laser includes the plurality of surface emitting lasers including a first surface emitting laser, a second surface emitting laser adjacent to the first surface emitting laser, and a third surface emitting laser adjacent to the second surface emitting laser. Each of the plurality of surface emitting lasers is operated by an independent signal with respect to one another and includes a first mirror, an active layer, a second mirror, and a columnar portion composed of at least the first mirror and the active layer. A diameter of the columnar portion of the second surface emitting laser is smaller than a diameter of the columnar portion of the first surface emitting laser, and larger than a diameter of the columnar portion of the third surface emitting laser. | 10-02-2008 |
| 20080279246 | Semiconductor laser apparatus and method for mounting semiconductor laser apparatus - According to an aspect of the present invention, there is provided a semiconductor laser apparatus including: a laser device including: a semiconductor substrate, first and second resonators formed on the semiconductor substrate, and first and second electrodes that are respectively connected with the first and the second resonators and extend away from each other; and a submount including: third and fourth electrodes respectively adhered with the first and the second electrodes; wherein each of the first and the second electrodes includes: an energizing portion covering the corresponding resonator, an adhering portion being disposed separately from the energizing portion and having a height larger than that of the energizing portion, and a stress-absorbing portion formed in the adhering portion. | 11-13-2008 |
| 20080317082 | Laser diode array, optical scannning device and printing apparatus - According to an aspect of the present invention, there is provided a laser diode array including: a laser array chip including: a substrate; and at least three of laser diodes that are formed on the substrate; first electrodes that are formed on each of the laser diodes so as to be isolated from one another; a sub-mount; and second electrodes that are formed on the sub-mount so as to correspond to the first electrodes and so as to be isolated from one another, wherein the laser array chip is mounted on the sub-mount through the first electrodes and the second electrodes, and wherein, among contacting surfaces between each of the first electrodes and a corresponding one of the second electrodes, a contacting area of a central one of the contacting surfaces is larger than that of an end one of the contacting surfaces. | 12-25-2008 |
| 20090016398 | Carrier For a Vertical Arrangement of Laser Diodes With a Stop - A laser radiation source which is scalable with respect to output is designed in such a way that laser diode elements can be arranged on a carrier so as to be stacked equidistantly and with low stress at a low manufacturing cost. The laser radiation source comprises a vertical stack of laser diode elements contacted on both sides via electrically conductive substrate layers, and at least one multi-layer carrier comprising a first and a second metallic layer which are separated by at least one electrically insulating layer of nonmetallic material. At least one of the metallic layers is divided into metallic layer regions which are arranged adjacent to one another and at a distance from one another. Oppositely polarized substrate layers of adjacent laser diode elements are arranged on common layer regions of a metallic layer. Collimating lenses serve to collimate the radiation emitted by the laser diode elements. | 01-15-2009 |
| 20090046755 | INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element. | 02-19-2009 |
| 20090074024 | Photonic crystal laser - A laser capable of emitting multiple laser beams is provided. A two-dimensional photonic crystal laser according to the present invention has a laminated structure including an active layer, a first photonic crystal layer having a periodic distribution of refractive index with a first period, and a second photonic crystal layer having a periodic distribution of refractive index with a second period that differs from the first period. This two-dimensional photonic crystal laser can emit a main beam traveling in a direction perpendicular to the two-dimensional photonic crystals and side beams each traveling in a direction inclined with respect to the main beam. These beams can be used, for example, in a recording/reproducing device by means of an optical disk, the main beam being used for recording/reproducing information and the side beams for following up the track. | 03-19-2009 |
| 20090086786 | TWO-DIMENSIONAL SURFACE-EMITTING LASER ARRAY - Provided is a two-dimensional surface-emitting laser array that enables to dispose more elements in a smaller area and enables compact size, high resolution, and high speed thereof. The two-dimensional surface-emitting laser array includes surface-emitting laser elements arranged in a two-dimensional manner of m rows and n columns (m is an integer of two or larger, and n is an integer of three or larger). The interval between mesas for arranging electrical wirings for individually driving the surface-emitting laser elements is assigned so that the interval in the m row direction increases according to the number of the electrical wirings passing through between the mesas. | 04-02-2009 |
| 20090129420 | HIGH POWER LASER DIODE ARRAY COMPRISING AT LEAST ONE HIGH POWER DIODE LASER AND LASER LIGHT SOURCE COMPRISING THE SAME - Array comprising high power laser diode comprising laser light emitters, each defining, in a direction perpendicular to direction of propagation of an output laser beam, a fast axis and a slow axis; fast axis collimating means for collimating output laser beams in fast axis direction; and slow axis beam shaping means for collimating or focussing output laser beams in slow axis direction, said slow axis beam shaping means disposed external to said high power laser diode; wherein said laser light emitters are displaced relative to each other in fast axis direction or in fast and slow axis direction by equidistant spacings, respectively; and including optical means for forming output laser beam profile in far field of all laser light emitters consisting of said fast and slow axis collimated or focussed output laser beams arranged adjacently in seamless manner in one or two dimensions with optical fill factor of about 100%. | 05-21-2009 |
| 20090147816 | SEMICONDUCTOR LASER DEVICE - In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount. | 06-11-2009 |
| 20090161718 | TWO-BEAM SEMICONDUCTOR LASER DEVICE - A two-beam semiconductor laser device | 06-25-2009 |
| 20090207873 | Electrically-Pumped Semiconductor Zigzag Extended Cavity Surface Emitting Lasers and Superluminescent Leds - A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation the optical amplifier chip includes at least two gain elements that are spaced apart and have a fill factor no greater than 0.5. As a result the total optical gain may be increased. The optical amplifier chip may be operated as a superluminescent LED. Alternately, the optical amplifier chip may be used with external optical elements to form an extended cavity laser. Individual gain elements may be operated in a reverse biased mode to support gain-switching or mode-locking. | 08-20-2009 |
| 20090232177 | Method for Producing a Semiconductor Laser, and Semiconductor Laser - A method for producing a multiplicity of semiconductor lasers ( | 09-17-2009 |
| 20090238230 | SEMICONDUCTOR LASER APPARATUS - A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside. | 09-24-2009 |
| 20090245315 | LASER DIODE ASSEMBLIES - Laser diodes ( | 10-01-2009 |
| 20090268771 | Multi-Stripe Laser Diode Desings Which Exhibit a High Degree of Manufacturability - The present application is directed at providing a new lasing device having increased production yields over other single mode laser devices. In particular, a semiconductor lasing device is provided having at least two lasing devices formed on a common substrate. The lasing device is arranged so that in use a preferred lasing device is operational and remaining lasing devices are redundant. This redundancy improves the production yield since only one of the lasing devices needs to function correctly as the others are unused. | 10-29-2009 |
| 20090323752 | High brightness laser diode module - A high-brightness laser module is configured with a beam-compression unit capable of reducing a diameter of parallel light beams which are emitted by respective spaced apart individual laser diodes. The module further has an objective lens configured to losslessly launch the light with the reduced diameter into a fiber. | 12-31-2009 |
| 20100034234 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region. | 02-11-2010 |
| 20100046569 | SILICON-BASED LENS SUPPORT STRUCTURE FOR DIODE LASER - An apparatus that includes a first diode laser and a silicon-based support structure is provided. The first diode laser is configured to emit a first laser beam when powered. The support structure includes a silicon-based support plate, a silicon-based first fin structure, and a silicon-based second fin structure. The support plate has a first primary surface and a second primary surface opposite the first primary surface. The first fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The first fin structure is physically coupled to the support plate with the first edge of the first fin structure attached to the first primary surface of the support plate. The second fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The second fin structure is physically coupled to the support plate with the first edge of the second fin structure attached to the first primary surface of the support plate. The first diode laser is physically coupled between the first and the second fin structures to emit the first laser beam in a direction away from the support plate. | 02-25-2010 |
| 20100054293 | Laser light source device and manufacturing method for manufacturing laser light source device - A manufacturing method for manufacturing a laser light source device, includes: providing a first laser element having a first emitter, a second laser element having a second emitter, and a reflection member; adjusting a relative angle between the first laser element and the reflection member; adjusting a relative angle of the second laser element relative to the first laser element by using the reflection member; and adjusting a relative rotation angle between the first laser element and the second laser element and a relative position between the first laser element and the second laser element, so that the light emitted from the first emitter is incident into the second emitter and so that the light emitted from the second emitter is incident into the first emitter. | 03-04-2010 |
| 20100074294 | APPARATUS AND METHOD OF ESTABLISHING OPTICAL COMMUNICATION CHANNELS BETWEEN A STEERABLE ARRAY OF LASER EMITTERS AND AN ARRAY OF OPTICAL DETECTORS - An array of light beam emitter sections comprises: a substrate having a surface divided into an array of sections; and a grouping of light emitters disposed at each surface section and configured to emit light beams at different emission angles with respect to the surface. Also disclosed is apparatus for establishing optical communication channels between the array of light beam emitter sections and an array of light detectors. Further disclosed is a method of establishing optical communication channels between the array of light emitter sections and the array of light detectors by mapping at least one light emitter of each grouping with a light detector of the detector array to establish optical communication channels between the arrays based on the mappings. | 03-25-2010 |
| 20100103973 | INTERLEAVING LASER BEAMS - A laser system includes at least two sources configured to provide at least two spatially separated laser beams, and a mount configured to mount the at least two sources along an arc, the arc defining an angular coordinate and a radial coordinate, wherein an axial coordinate is orthogonal to the angular coordinate and the radial coordinate, and the spatially separated laser beams are separated in the axial coordinate. The mount is further configured to mount the at least two sources providing thereby an offset of the laser beams in the axial coordinate such that the laser beams interleave in the axial direction at a center region of the arc. | 04-29-2010 |
| 20100172390 | SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF - A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield. | 07-08-2010 |
| 20100215072 | SEMICONDUCTOR DEVICE AND OPTICAL MODULE - A semiconductor laser element | 08-26-2010 |
| 20100226405 | High brightness laser diode module - A high-brightness laser module is configured with a beam-compression unit capable of reducing a diameter of parallel light beams which are emitted by respective spaced apart individual laser diodes. The module further has an objective lens configured to losslessly launch the light with the reduced diameter into a fiber. | 09-09-2010 |
| 20100260226 | LASER LIGHT SOURCE MODULE - A heat sink is made of a material excellent in thermal conductivity and is mounted on a stem; a sub-mount substrate is made of a material excellent in insulation property and is mounted on the heat sink; a first lead frame made of a material excellent in electric conductivity and thermal conductivity and having a linear expansion coefficient similar to that of a semiconductor laser array, is mounted on the sub-mount substrate, having the semiconductor laser array mounted thereon, and composing a power feeding path of the semiconductor laser array; a second lead frame made of a material excellent in electric conductivity and thermal conductivity, is arranged on the sub-mount substrate side by side with the first lead frame, and composing the power feeding path of the semiconductor laser array; and a wire electrically bonds the semiconductor laser array and the second lead frame. | 10-14-2010 |
| 20100272144 | APPARATUSES FOR FABRICATING MICRO PATTERNS USING LASER DIODE ARRAY AND METHODS FOR FABRICATING MICRO PATTERNS - Apparatuses for fabricating micro patterns using a laser diode array and methods for fabricating micro patterns are presented. The apparatus includes a laser diode array having at least one laser diode wherein light emitted from each laser diode is focused by a convex lens onto a second material layer attached to a first material layer. At least one driving shaft drives motion of the first and the second material layers. An adjustment means is used for adjusting the gap and pitch between adjacent laser diodes. | 10-28-2010 |
| 20100290498 | SEMICONDUCTOR LASER DEVICE AND DISPLAY - A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device ( | 11-18-2010 |
| 20100329296 | METHOD OF MANUFACTURING INTEGRATED SEMICONDUCTOR LASER DEVICE, INTEGRATED SEMICONDUCTOR LASER DEVICE AND OPTICAL APPARATUS - A method of manufacturing a semiconductor laser device includes steps of forming a third oblong substrate by bonding a first oblong substrate and a second oblong substrate, and dividing the third oblong substrate so that first side surfaces of the first semiconductor laser devices protrude sideward from positions formed with third side surfaces of the second semiconductor laser devices while the fourth side surfaces of the second semiconductor laser devices protrude sideward from positions formed with the second side surfaces of the first semiconductor laser devices, and the first electrodes are located on protruding regions of the first semiconductor laser devices. | 12-30-2010 |
| 20110019710 | Diode Laser Structure for Generating Diode Laser Radiation - A diode laser structure includes multiple stripe emitters disposed next to each other, in which each of the stripe emitters is configured to emit, during operation, a laser beam having a corresponding beam parameter product with respect to a slow axis (BPP | 01-27-2011 |
| 20110182316 | SURFACE EMITTING SEMICONDUCTOR LASER - A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers. A cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector is greater than an oscillation wavelength. | 07-28-2011 |
| 20110188532 | Semiconductor Laser Apparatus - This semiconductor laser apparatus includes a first semiconductor laser device having a first surface and a second surface, an integrated laser device formed by a second semiconductor laser device and a third semiconductor laser device having a third surface and a fourth surface, and a support substrate. The third surface is bonded onto a first region of the support substrate, a first section of the first surface overlaps with at least part of the fourth surface, and a second section of the first surface is bonded to a second region of the support substrate. | 08-04-2011 |
| 20110235669 | ENHANCED VBASIS LASER DIODE PACKAGE - A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate. | 09-29-2011 |
| 20120027041 | WAVELENGTH VARIABLE LASER AND A MANUFACTURING METHOD THEREOF - A wavelength variable laser includes: a substrate on which an optical coupler is formed as a planar optical waveguide; a DFB array part arranged on the substrate and having DFB laser elements respectively supply optical signals to the optical coupler; and an SOA part arranged on the substrate and having an SOA element configured to amplify an optical signal outputted from the optical coupler. The DFB array part and the SOA part are respectively formed in chips having a same lamination structure to each other. A wavelength variable laser and a modulator integrated wavelength variable laser with high yield ratio can be provided. | 02-02-2012 |
| 20120044965 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a base having a step portion, a first upper surface on a lower side of the step portion and a second upper surface on an upper side of the step portion, a first semiconductor laser device bonded onto the first upper surface, having a first light-emitting region on an upper side thereof, and a second semiconductor laser device bonded onto the second upper surface, having a second light-emitting region on a lower side thereof. The first light-emitting region is located above the second upper surface in a state where the base is horizontally arranged. | 02-23-2012 |
| 20120106584 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a base, a plurality of electrodes arranged along a first direction on an upper surface of the base, a plurality of semiconductor laser devices bonded to respective upper surfaces of the plurality of electrodes, emitting laser beams in a second direction, and a photodetector having a photosensitive surface arranged in a region of the base in a third direction relative to the plurality of semiconductor laser devices. An electrode arranged in a position other than end portions in the first direction and a fourth direction, of the plurality of electrodes has an extraction wiring portion arranged on the photosensitive surface of the photodetector. | 05-03-2012 |
| 20120114006 | SURFACE EMITTING LASER - A surface emitting laser emitting a laser beam in a single transverse mode irrespective of an emission area while one-dimensionally aligning polarization of the output beam, including a two-dimensional photonic crystal, having resonance modes in directions of the primitive translation vector a | 05-10-2012 |
| 20120147918 | SURFACE EMITTING LASER - A surface emitting laser includes a stepped structure including portions having different thicknesses. The optical path length from a plane defined above the stepped structure and extending parallel to a base substrate to an interface between a front mirror and the stepped structure is set to a specific value in each of the portions of the stepped structure. | 06-14-2012 |
| 20130142211 | PARALLEL OPTICAL TRANSCEIVER MODULE - A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer. | 06-06-2013 |
| 20130148684 | HIGH-BRIGHTNESS SPATIAL-MULTIPLEXED MULTI-EMITTER PUMP WITH TILTED COLLIMATED BEAM - Multi-mode diode emitters are stacked in a staircase formation to provide a spatially-mulitplexed output. Improved coupling efficiency is achieved by providing tilted collimated output beams that determine an effective step height of the stepped structure. Since the effective step height is dependent on the tilt angle, a variable number of emitters can be used inside packages having a same physical step height, while still attaining high coupling efficiency. | 06-13-2013 |
| 20130156061 | Arrangement for Generating Fast Wavelength-Switched Optical Signal - Various embodiments of an arrangement for generating fast wavelength-switched optical signal are described herein. In some embodiments, the arrangement can be integrated with lasers, optical waveguides, optical splitters and gates to form a fast wavelength switched monolithic optical source. In some embodiments, an optical modulator is incorporated into the arrangement to form a fast wavelength switched optical transmitter. | 06-20-2013 |
| 20130163632 | LIGHT EMITTING DEVICE - A light emitting device includes: a first light emitting element mounting unit including: a first substrate; a first light emitting element on a first surface of the first substrate; and a first substrate holder which includes a first column, and a first protrusion which extends from the first column toward the first light emitting element and bonded to the first surface of the first substrate; and a second light emitting element mounting unit including: a second substrate; a second light emitting element mounted on a first surface of the second substrate; and a second substrate holder which includes: a second column, and a second protrusion which extends from the second column toward the second light emitting element and bonded to the first surface of the second substrate. The second light emitting element mounting unit is stacked on the first light emitting element mounting unit. | 06-27-2013 |
| 20130223465 | SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING SURFACE-EMITTING LASER, METHOD OF MANUFACTURING SURFACE-EMITTING LASER ARRAY AND OPTICAL APPARATUS EQUIPPED WITH SURFACE-EMITTING LASER ARRAY - A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (λ: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer. | 08-29-2013 |
| 20130230070 | SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING DEVICE - A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer. | 09-05-2013 |
| 20130243026 | TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER - Provided is a two-dimensional photonic crystal surface emitting laser having an active layer for generating light of a predetermined wavelength range by an injection of electric current and a two-dimensional photonic crystal layer provided on one side of the active layer, the layer having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged. | 09-19-2013 |
| 20130250994 | SEMICONDUCTOR LASER ASSEMBLY AND METHOD FOR PRODUCING A SEMICONDUCTOR LASER ASSEMBLY - A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer. | 09-26-2013 |
| 20130272334 | SEMICONDUCTOR LASER MODULE AND METHOD FOR MANUFACTURING SAME - A semiconductor laser module includes a laser diode array, an optical fiber array, a fiber array fitting for fixing the optical fiber array, a casing, and a support fitting for fixing the fiber array fitting and casing. The fiber array fitting and support fitting have a first contact section that is in line-contact or surface-contact with the plane section parallel with the light emission surface of the laser diode array, and are laser-welded and fixed to each other at the first contact section. The support fitting and casing have a second contact section that is in line-contact or surface-contact with the plane section vertical to the light emission surface of the laser diode array, and are laser-welded and fixed to each other at the second contact section. | 10-17-2013 |
| 20140079088 | SYSTEM AND METHOD FOR COMBINING LASER ARRAYS FOR DIGITAL OUTPUTS - Embodiments comprise laser emitter devices that generate a collimated beam of light the intensity or amplitude of which may be varied so as to carry data signals at a high rate of efficiency, and that is less sensitive to alignment of the detector, and detector systems for detecting the same collimated beam and reading the data carried in the beam of light. | 03-20-2014 |
| 20140140363 | HIGH-YIELD HIGH-PRECISION DISTRIBUTED FEEDBACK LASER BASED ON AN ARRAY - A distributed-feedback laser with wavelength accuracy and spectral purity. An array of lasers with highly reflecting/anti reflecting facets is fabricated on a single chip with controlled variations, in for example laser gratings. A laser that best meets predetermined specifications is selected and configured for use. | 05-22-2014 |
| 20150340841 | LASER ARRAYS FOR VARIABLE OPTICAL PROPERTIES - A VCSEL array device formed of an array of raised VCSELs on an electrical contact and raised inactive regions connected to the electrical contact. The VCSELs can be physically and/or electrically organized to improve power or speed, or in phase and in parallel. The VCSELs and inactive regions are positioned between the electrical contact and an electrical waveguide. The VCSELs may be separated into subarrays and each VCSEL may be covered with an integrated or bonded microlens for directing beams of light without external lenses. The VCSELs may also be electrically selected to form two or more groups, with beams of light from each group have unique divergences, unique power or unique optical power, and each beam of light in a group forming a spot at a point on a line, on the same optical axis, or as part of a pattern. | 11-26-2015 |
| 20160013621 | DISTRIBUTED FEEDBACK LASER DIODE ARRAY AND METHOD OF MANUFACTURING SAME | 01-14-2016 |
