| Entries |
| Document | Title | Date |
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| 20080198890 | VERTICALLY EMITTING LASER AND METHOD OF MAKING THE SAME - Diode lasers comprise a substrate and a number of material layers disposed thereon that include a P-type material layer, and an N-type material layer. A gain layer and diffraction grating feedback layer can be also be included in the material layers. The material layers are formed by epitaxial deposition, during which process a wall surface common to the material layers is also formed. This wall surface forms an internally reflective wall surface within the material layers that is oriented to reflect a laser beam internally within the diode laser construction towards a top or bottom surface of the diode laser for emission therefrom. In an preferred embodiment, the internally reflective wall surface is oriented at a 45 degree angle, and the laser beam is reflected by the wall surface to emit the laser beam from the diode laser at a 90 degree angle relative to the top or bottom surface. | 08-21-2008 |
| 20080212636 | Surface-Emission Laser Diode and Fabrication Process Thereof - A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al | 09-04-2008 |
| 20080212637 | DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER INCLUDING WAVELENGTH MONITORING SECTION - In general, a complex-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The complex-coupled DFB laser may be configured with a wavelength monitoring section and may be configured to provide facet power asymmetry. The wavelength monitoring section may include a second-order grating section configured to emit radiation (e.g., vertical radiation) from a side of the DFB laser for monitoring. | 09-04-2008 |
| 20080232418 | Surface Emitting Laser - A surface emitting laser includes a substrate, a first Bragg reflector layer formed on the substrate, an active layer formed on the first Bragg reflector layer and having a light-emitting region, a second Bragg reflector layer formed on the active layer to emit light from the surface in the direction of the optical axis (Z), and a light-scattering member for extracting light from the surface of the second Bragg reflector layer in a direction intersecting the optical axis. With this arrangement, the intensity of light emitted from the surface emitting laser in one direction can be monitored by a simple structure. | 09-25-2008 |
| 20080240195 | Semiconductor optical device - In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. The first distributed Bragg reflector portion includes first distributed Bragg reflector layers and second distributed Bragg reflector layers which are arranged alternately. The second distributed Bragg reflector portion includes third distributed Bragg reflector layers and fourth distributed Bragg reflector layers which are arranged alternately. The first conductive type semiconductor region, the active layer and the second conductive type semiconductor region are provided between the first distributed Bragg reflector portion and the second distributed Bragg reflector layers. | 10-02-2008 |
| 20080247436 | OPTOELECTRONIC DEVICE AND METHOD OF OPERATING OPTOELECTRONIC DEVICE - The invention provides an optoelectronic device combining a vertical cavity surface emitting laser (VCSEL) and a photodetector for monitoring the output power of the vertical cavity surface emitting laser. To improve the signal-to-noise ratio of the photodetector, a light deflector is interposed between the photodetector and the VCSEL. | 10-09-2008 |
| 20080247437 | TUNABLE LONG-WAVELENGTH VCSEL SYSTEM - A vertical cavity surface emitting laser system is provided including providing a epitaxially grown bottom spacer layer, an active layer on the epitaxially grown bottom spacer layer, a top spacer layer on the active layer, and etching a part of the epitaxially grown top spacer layer on a side opposite the active layer. | 10-09-2008 |
| 20080253421 | High-Power Semiconductor Laser - A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser. | 10-16-2008 |
| 20080253422 | Surface emitting semiconductor laser - A surface emitting semiconductor laser comprises first and second distributed Bragg reflectors, an active layer and a junction region. The first distributed Bragg reflector includes first III-V compound semiconductor layers and second III-V compound semiconductor layers, and the first and second III-V compound semiconductor layers are alternately arranged. The second distributed Bragg reflector includes a first portion and a second portion. The first portion including third III-V compound semiconductor layers and fourth III-V compound semiconductor layers, and the third and fourth III-V compound semiconductor layers are alternately arranged. The second portion includes first insulating layers and second insulating layers, and the first and second insulating layers are alternately arranged. The active layer is provided between the first distributed Bragg reflector and the second distributed Bragg reflector. The active layer is made of III-V compound semiconductor. The first portion of the second distributed Bragg reflector is provided between the active layer and the second portion. The junction region includes a tunnel junction, and the junction region is provided between the active layer and the second distributed Bragg reflector. | 10-16-2008 |
| 20080259985 | Method And Apparatus For Modifying Out Of Band Reflection For A Laser Element - A method and apparatus for modifying the out of band reflection of a laser element is described. The laser element includes an active medium excited by optical pumping means to produce stimulation emission of light. The laser element further includes a Bragg grating structure for providing optical feedback for the active medium, with the Bragg grating structure including a phase transition region providing a change in phase. The change in phase of the phase transition region is adjusted to modify out of band reflection of said laser element. | 10-23-2008 |
| 20080279245 | VCSEL, OPTICAL DEVICE, LIGHT IRRADIATION DEVICE, DATA PROCESSING DEVICE, LIGHT SOURCE, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND OPTICAL TRANSMISSION SYSTEM - A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region. | 11-13-2008 |
| 20080285612 | Surface emitting semiconductor laser - In a surface emitting semiconductor laser, a first distributed Bragg reflector includes first and second semiconductor layers of a first conductive type, and the first and second semiconductor layers are alternately arranged. A second distributed Bragg reflector includes first and second portions, and the first and second portions are arranged in a direction of a predetermined axis. The first portion is made of semiconductor, and the second portion is made of dielectric. An active layer is provided on the first distributed Bragg reflector, and the first portion of the second distributed Bragg reflector is provided between the active layer and the second portion of the second distributed Bragg reflector. The first distributed Bragg reflector, the active layer and the second distributed Bragg reflector are sequentially arranged in the direction of the predetermined axis. A III-V compound semiconductor region is provided on the first distributed Bragg reflector so as to surround the first portion of the second distributed Bragg reflector. | 11-20-2008 |
| 20080298416 | Mesa Vertical-Cavity Surface-Emitting Laser - The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR mesa, such that an inner circumference of the contact annulus defines a window region of the top surface of the first DBR mesa. A second DBR mesa of dielectric material is disposed on the window region. Whereas the first DBR mesa has a first reflectance at a lasing wavelength that is insufficient to sustain lasing in the active layer, the first DBR mesa and the second DBR mesa together have a total reflectance at the lasing wavelength that is sufficient to sustain lasing in the active layer under the window region. | 12-04-2008 |
| 20090010295 | Distributed Feedback Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technology and the Manufacture Method of the Same - Using sampled Bragg grating structure, the present invention proposes a distributed feedback (DFB) semiconductor laser based on reconstruction-equivalent-chirp technology. Namely, the Bragg grating in the said DFB semiconductor laser cavity is a sampled Bragg grating, in which there is an equivalent grating corresponding to the original ordinary DFB grating as feedback for lasing. The laser wavelength of the said semiconductor laser located within the operation bandwidth of the said equivalent grating. The said equivalent grating is designed and fabricated using REC technology and has equivalent chirps, one equivalent phase shift or multiple equivalent phase shifts. The said sampled Bragg grating has multiple ghost gratings and the wavelength spacing between neighboring ghost gratings is inversely proportional to the sampling period and the effective refractive index of the said semiconductor laser. Only one ghost grating except the ghost grating related to the center wavelength is selected to be as equivalent grating. In semiconductor laser fields, only based on sub-micron precision, the present invention provides a method to realize various complex equivalent chirps and equivalent phase shifts in the resonant cavity of the said semiconductor laser. These equivalent chirps and equivalent phase shifts have the same functions with the corresponding true chirps and true phase shifts, so as to avoid the processes of fabrication of grating structure with complex true chirps and true phase shifts. | 01-08-2009 |
| 20090052490 | Laser diode array, method of manufacturing same, printer, and optical communication device - A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface. | 02-26-2009 |
| 20090052491 | Organic laser apparatus - The invention is an organic laser apparatus including an organic compound that radiates laser light when current is injected. In an organic compound layer employed for the laser apparatus of the invention, a laminated structure and film thickness of each layer are determined in consideration of wavelength so as to radiate laser light. The organic compound layer collectively means each thin film containing mainly an organic compound formed between a pair of electrodes. The organic compound layer is formed so as to be sandwiched between a pair of electrodes and, preferably, formed by a plurality of layers each having a different carrier transport property and a different light emission wavelength. In addition, it is preferable to form a so-called resonator structure, in which a reflector is provided between the pair of electrodes. | 02-26-2009 |
| 20090059988 | SEMICONDUCTOR LASER AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optical waveguide on the semiconductor substrate. The semiconductor laser is configured such that a Bragg wavelength in a region in the proximity of each of the opposite ends of the optical waveguide is longer than a Bragg wavelength in a region in the proximity of the phase shift in a state in which current injection is not performed for the optical waveguide. | 03-05-2009 |
| 20090067465 | MULTIPLE CAVITY ETCHED-FACET DFB LASERS - A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips. | 03-12-2009 |
| 20090080486 | Laser Device Using an Inorganic Electro-Luminescent Material Doped With a Rare-Earth Element - A laser device using an inorganic electro-luminescent material doped with a rare-earth element is provided. A dielectric layer such as SiO | 03-26-2009 |
| 20090080487 | Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency - A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that reflects the mesa shape of the tunnel junction. The dielectric DBR of the invention includes a plurality of first films with relatively smaller refractive index and a plurality of second films with relatively larger refractive index. These first and second films are alternately stacked to each other to cause the periodic structure of the refractive indices. The VCSEL of the invention, different from the conventional device, provides the dielectric film with relatively larger refractive index that directly comes in contact with the semiconductor to set the node of the optical standing wave at the interface between the dielectric DBR and the semiconductor. | 03-26-2009 |
| 20090080488 | SURFACE EMITTING LASER - A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a second reflector formed on the semiconductor spacer layer in a region above the tunnel junction layer, a first electrode formed in the periphery of the second reflector on the semiconductor spacer layer, and a second electrode electrically connected to a layer lower than the active layer, wherein a layer thickness of the semiconductor spacer layer in the region directly above the tunnel junction layer is thinner than the layer thickness of the semiconductor spacer layer in the region directly below the first electrode. | 03-26-2009 |
| 20090086784 | Quantum well intermixing - Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one sacrificial layer over the upper epitaxial layer, and forming a QWI enhanced region and a QWI suppressed region by applying a QWI enhancing layer over a portion of the sacrificial layer, wherein the portion under the QWI enhancing layer is the QWI enhanced region, and the other portion is the QWI suppressed region. The method further comprises the steps of applying a QWI suppressing layer over the QWI enhanced region and the QWI suppressed region, and annealing at a temperature sufficient to cause interdiffusion of atoms between the quantum well layer and the barrier layers of the upper epitaxial layer and the lower epitaxial layer. | 04-02-2009 |
| 20090086785 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer. | 04-02-2009 |
| 20090097522 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE - A vertical cavity surface emitting laser device is provided that comprises a monolithically integrated grating ( | 04-16-2009 |
| 20090122824 | SEMICONDUCTOR LASER APPARATUS - A semiconductor laser apparatus having a first clad layer, a first guide layer, an active layer, a second guide layer, and a second clad later formed in the order listed is disclosed. A layer serving as an optical waveguide is formed between the first clad layer and the second clad layer and wherein the layer serving as an optical waveguide is formed with such a thickness that not only light of a fundamental mode but also light of a higher-order mode is guided. An absorption layer absorbing the light of a higher-order mode is formed in a position to suppress only the oscillation of the light of a higher-order mode, the absorption layer being formed as a layer forming part of the layer to serve as an optical waveguide. | 05-14-2009 |
| 20090135876 | SURFACE-EMITTING LASER AND OPTICAL APPARATUS FORMED BY USING SURFACE-EMITTING LASER - A surface-emitting laser has an active layer between a first distributed Bragg reflector and a second distributed Bragg reflector. The first distributed Bragg reflector is formed so as to have a resonant mode and a first longitudinal mode different from the resonant mode included in the reflectivity stop band and a second longitudinal mode different from the resonant mode and the first longitudinal mode excluded from the reflectivity stop band. Oscillation is suppressed in the first longitudinal mode and in the second longitudinal mode. As a result, the surface-emitting laser can oscillate in a single longitudinal mode, suppressing longitudinal mode hopping. | 05-28-2009 |
| 20090135877 | Lighting Device Equipped with Coaxial Line Laser Diodes and Fabrication Method Thereof - The present invention provides a fabrication method of coaxial line laser diodes and a coaxial lighting optical fiber which disperses and guides uniform emission of light from a coaxial line laser diode. The line coaxial laser diode can be extended at a greater length to generate more spontaneous emission photons which are emitted from an elongated tubular active layer. The active layer has a uniform built-in electric field to distribute uniform current therein to get higher quantum efficiency. The length of the coaxial laser diode can be increased through a VLSED method. A longer laser ingot can be produced and cut to a large number of coaxial laser diodes. This method can reduce the waste of cutting in the wafer process and get larger lighting areas. Both the coaxial line laser diode and the coaxial lighting optical fiber can be coupled to form a high efficiency white-emitting luminescence device. | 05-28-2009 |
| 20090141766 | Surface emitting semiconductor laser - In a surface emitting semiconductor laser, the primary surface of a substrate includes first to third areas. The first and second areas are contiguous to each other, and the third area surrounds the first and second areas. A first DBR is provided on the substrate. An active layer is provided on the following: the first DBR; the first and second areas; and a boundary therebetween. A first semiconductor spacer layer is provided on the active layer. A second semiconductor spacer layer is provided on the first semiconductor spacer layer. The conductivity type of the first semiconductor spacer layer is different from that of the second semiconductor spacer layer. A tunnel junction region is on the first area and between the first and the second semiconductor spacer layers. The active layer, the first semiconductor spacer layer, the second semiconductor spacer layer, the tunnel junction region constitutes an optical cavity mesa, which includes low-resistance and high-resistance regions located on the first area and the second area, respectively. The low-resistance region includes the tunnel junction region. A second DBR is on the second semiconductor spacer layer and the first area. A first electrode is on the first and second areas and the boundary. | 06-04-2009 |
| 20090154517 | HYBRID LASER DIODE FOR SINGLE MODE OPERATION AND METHOD OF FABRICATING THE SAME - Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating. | 06-18-2009 |
| 20090161717 | BRAGG REFLECTOR GRATING - A Bragg reflector grating comprises a plurality of chirped grating sections ( | 06-25-2009 |
| 20090168827 | Nitride semiconductor laser chip and method of fabricating same - A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L | 07-02-2009 |
| 20090168828 | VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION PROCESS THEREOF - A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector. | 07-02-2009 |
| 20090201964 | Semiconductor laser optical integrated semiconductor device - A semiconductor laser is a distributed feedback semiconductor laser in which the lasing wavelength can be changed, and includes a semiconductor substrate and a semiconductor layer portion provided on the substrate and including first and second active layers and an intermediate layer that optically couples the first active layer and the second active layer. The first active layer, the intermediate layer, and the second active layer are arranged in that order in a predetermined axis direction. The semiconductor laser further includes a diffraction grating that is optically coupled with the first and second active layers of the semiconductor layer portion, a first electrode and a second electrode for injecting carriers into the first active layer and the second active layer, respectively, and a third electrode for supplying the intermediate layer with a current. The grating extends in the predetermined axis direction and has a period that is uniform in the predetermined axis direction. | 08-13-2009 |
| 20090213892 | VCSEL WITH REDUCED LIGHT SCATTERING WITHIN OPTICAL CAVITY - A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type layer, the first n-type spacer and the second DBR in this order. The heavily doped n-type layer, which is formed so as to cover the p-type spacer layer and the heavily doped p-type mesa, forms the tunnel junction with respect to the heavily doped p-type mesa. Because the height, which is appeared in the surface of the n-type spacer layer, reflects the height of the heavily doped p-type mesa and is comparatively small, the light scattering between the second DBR and the n-type spacer layer is suppressed. | 08-27-2009 |
| 20090213893 | END PUMPING VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER - A vertical external cavity surface emitting laser (VECSEL) is provided, in which the incident loss of a pumping beam is reduced. The VECSEL device comprising: a transparent substrate; an optical pump radiating a pumping beam onto a first surface of the transparent substrate; a first anti-reflection coating (ARC) layer formed of a first light-transmitting insulating material on a second surface of the transparent substrate to reduce loss of the pumping beam; a distributed Bragg reflector (DBR) layer formed on the first ARC layer; a periodic gain layer formed on the DBR layer; and an external cavity mirror facing the periodic gain layer. | 08-27-2009 |
| 20090219967 | Semiconductor optical device - To provide a semiconductor optical device which can restrain laser characteristics from being deteriorated by excitation in a substrate mode and can reduce the number of manufacturing steps. A semiconductor optical device comprises a first DBR layer, provided on a semiconductor substrate, having first and second semiconductor layers stacked alternately, a first cladding layer, an active layer, and a second cladding layer. The semiconductor substrate has a bandgap higher than that of the active layer. The first DBR layer is transparent to light having an emission wavelength, while the first and second semiconductor layers have respective refractive indices different from each other. Since the first DBR layer is thus provided between the semiconductor substrate and first cladding layer, the guided light reaching the lower end of the first cladding layer, if any, is reflected by the first DBR layer, whereby light can be restrained from leaking to the semiconductor substrate. This can avoid the substrate-mode excitation, thereby suppressing its resulting laser characteristic deteriorations such as destabilization of oscillation wavelengths. | 09-03-2009 |
| 20090232176 | Single Mode Vertical Cavity Surface Emitting Laser Using Photonic Crystals With A Central Defect - Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode. | 09-17-2009 |
| 20090238229 | NITRIDE SEMICONDUCTOR LASER ELEMENT AND EXTERNAL-CAVITY SEMICONDUCTOR LASER DEVICE - Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less. | 09-24-2009 |
| 20090252191 | Semiconductor laser device - A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength λ | 10-08-2009 |
| 20090268770 | Gain Clamped Optical Device For Emitting LED Mode Light - A gain clamped optical device includes a semiconductor stack and a resonant cavity configured to emit stimulated light. A window created in the optical device is configured to emit the stimulated light in an LED mode. | 10-29-2009 |
| 20090323751 | METHOD AND DEVICE FOR USING OPTICAL FEEDBACK TO OVERCOME BANDWIDTH LIMITATIONS CAUSED BY RELAXATION OSCILLATION IN VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS) - A semiconductor device is provided that includes an optical feedback structure that is monolithically integrated with a VCSEL device and which extends the speed of the VCSEL device beyond the speed to which it would otherwise be limited due to relaxation oscillation. The optical feedback structure does not rely on light emissions from the VCSEL substrate material to produce optical feedback. Consequently, extension of the bandwidth of the semiconductor device through the use of optical feedback is not limited by the absorption threshold wavelength of the substrate material. Furthermore, because the optical feedback structure does not include the substrate, the ability to use optical feedback to extend the bandwidth of the device is independent of the precision with which the substrate thickness can be controlled. | 12-31-2009 |
| 20100014551 | VERTICAL CAVITY SURFACE EMITTING LASER - A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an active layer; and a second DBR on the semiconductor mesa. The first part is composed of an undoped semiconductor material. The second part includes third III-V compound semiconductor layers composed of a material containing indium and gallium as the group III element and phosphorus as the group V element and fourth III-V compound semiconductor layers composed of a material containing gallium as the group III element and arsenic as the group V element. The third III-V compound semiconductor layers and the fourth III-V compound semiconductor layers are doped with an n-type impurity. | 01-21-2010 |
| 20100020840 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a semiconductor laser, a first optical waveguide, an optical coupler for branching light guided from the semiconductor laser through the first optical waveguide into two lights, two second optical waveguides, diffraction gratings provided individually on the two second optical waveguides, and an optical detector for detecting light guided through one of the two diffraction gratings, and the components are provided on the same substrate. The optical semiconductor device is configured such that reflection returning lights from the diffraction gratings side to the semiconductor laser side interfere with each other and thereby extinguish each other at the optical coupler and the phases of the reflection returning lights from the diffraction gratings side are displaced from each other by π at the optical coupler portion. | 01-28-2010 |
| 20100034232 | ELECTRICALLY PUMPED ND3+ DOPED SOLID LASER - A laser amplification structure comprising an active medium and at least two electrodes disposed on either side of the active medium, the active medium comprising a first layer of a silicon oxide doped with rare earth ions, wherein the first silicon layer is co-doped with silicon nanograins and rare earth ions. | 02-11-2010 |
| 20100034233 | SURFACE-EMISSION TYPE SEMICONDUCTOR LASER - The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ | 02-11-2010 |
| 20100098126 | CO-EXTRUDED MULTILAYER POLYMERS FILMS FOR ALL-POLYMER LASERS - A polymer film laser is provided that comprises a plurality of extruded polymer layers. The plurality of extruded polymer layers comprises a plurality of alternating dielectric layers of a first polymer material having a first refractive index and a second polymer material having second refractive index different than the first refractive index. | 04-22-2010 |
| 20100098127 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body. | 04-22-2010 |
| 20100128749 | Vertical-Cavity Surface-Emitting Semiconductor Laser Diode And Method For The Manufacture Thereof - The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength λ, wherein a periodic structure is arranged within the resonator as an optical grating made of semiconductive material and dielectric material, the main plane of extension of which is arranged substantially perpendicularly to the direction of emission of the semiconductor laser diode. The periodic structure is in direct contact with at least one of the semiconductor layers embedding the active zone and with at least one of the two distributed Bragg reflectors. | 05-27-2010 |
| 20100142579 | RESONATOR OF HYBRID LASER DIODE - Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide. | 06-10-2010 |
| 20100142580 | LASER DEVICE WITH COUPLED LASER SOURCE AND WAVEGUIDE - Laser device comprising:
| 06-10-2010 |
| 20100183043 | INTEGRATED PHOTONIC CIRCUIT - An integrated photonic circuit includes waveguides ( | 07-22-2010 |
| 20100189154 | SEMICONDUCTOR OPTICAL DEVICE - A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru—InP layer on a Ru—InP substrate or an Fe—InP substrate is used and semiconductor layers of an n-type semiconductor layer, a quantum-well layer, and a p-type semiconductor layer are stacked in this order. | 07-29-2010 |
| 20100195690 | VERTICAL EXTENDED CAVITY SURFACE EMISSION LASER AND METHOD FOR MANUFACTURING A LIGHT EMITTING COMPONENT OF THE SAME - The present invention relates to a method of manufacturing the light emitting component of a VECSEL and the corresponding VECSEL. In the method a layer stack ( | 08-05-2010 |
| 20100195691 | LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION - A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer. | 08-05-2010 |
| 20100202487 | SEMICONDUCTOR LASER AND METHOD FOR OPERATING A SEMICONDUCTOR LASER - A semiconductor laser includes an active region designed as a DFB laser and a passive resonator section that is optically coupled to the active region. The active region has a first section with a Bragg grating and a second section with a second Bragg grating that differs from the first Bragg grating. The two Bragg gratings differ from one another such that one and only one main mode of a DFB mode spectrum of the first section overlaps with one of two main modes of a DFB mode spectrum of the second section. | 08-12-2010 |
| 20100215071 | SEMICONDUCTOR LASER - A semiconductor laser including a p-type semiconductor layer, an active layer, and an n-type semiconductor layer sequentially laminated on a p-type semiconductor substrate; and a diffraction grating in the n-type semiconductor layer along the direction of an optical waveguide. The reflectance of light on two facing laser end surfaces is asymmetric; the length L of the active layer in the optical waveguide direction is 130 μm or shorter; the diffraction grating material has a photoluminescence wavelength of 1,200 nm or longer; and κL, which is the product of the length L and the coupling coefficient κ of the diffraction grating, is at least 1.5 and smaller than 3.0. | 08-26-2010 |
| 20100226404 | SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING IN-PLANE LIGHT EMITTING LAYERS - A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 | 09-09-2010 |
| 20100246627 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: a beam splitter that splits an input optical axis into a first split axis having a first split angle and a second split axis having a second split angle larger than the first split angle; a first unit that is located on the first split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the first unit and the beam splitter having a first length; a second unit that is located on the second split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the second unit and the beam splitter having a second length larger than the first length; and an optical semiconductor element that has a first outputting end having a first output axis coupled optically to the input optical axis of the beam splitter, a second outputting end having a second output axis, and optical gain, the optical semiconductor element being inclined so that the second output axis is arranged away to a side of the second split axis from the first output axis. | 09-30-2010 |
| 20100254422 | SEMICONDUCTOR LASER - A wavelength tunable laser according to the present invention includes a first facet and a second facet opposite the first facet, a reflective region provided adjacent to the second facet, and a gain region provided between the first facet and the reflective region. The reflective region has a plurality of reflection peak wavelengths that periodically vary at a predetermined wavelength interval. The first facet and the reflective region constitute a laser cavity. Furthermore, the gain region includes an active layer where light is generated, a diffraction grating layer having a diffraction grating whose grating pitch varies in a light propagation direction, a refractive-index control layer provided between the active layer and the diffraction grating layer, a first electrode for injecting current into the active layer, and a plurality of second electrodes arranged in the light propagation direction to inject current into the refractive-index control layer. | 10-07-2010 |
| 20100265982 | Fracture Resistant Metallization Pattern For Semiconductor Lasers - Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed. | 10-21-2010 |
| 20100296543 | FLEXIBLE MICROCAVITY STRUCTURE MADE OF ORGANIC MATERIALS USING SPIN-COATING TECHNIQUE AND METHOD OF MAKING - A flexible microcavity structure made of organic materials using spin-coating technique for allowing large area structures using a roll-to-roll process. The structure includes at least one first polymer layer, at least one second polymer layer, and a cavity layer. The cavity layer has quantum dots embedded therein for realizing an electrically pumped microcavity emitter. The at least one first polymer layer alternates with the at least one second polymer layer, respectively, to form a pair of distributed Bragg reflecting mirrors. The cavity layer is sandwiched between the pair of distributed Bragg reflecting mirrors. | 11-25-2010 |
| 20100303117 | SURFACE EMITTING LASER - The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror ( | 12-02-2010 |
| 20100309944 | Surface Emitting Semiconductor Laser and Method for Producing It - A surface emitting semiconductor laser includes a first semiconductor layer sequence, which comprises a pump laser. A second semiconductor layer sequence is arranged on the first semiconductor layer sequence and comprises a vertical emitter. The vertical emitter has a radiation-emitting active layer, a radiation exit side and a connecting side lying opposite the radiation exit side. The pump laser is arranged at the radiation exit side of the vertical emitter and a carrier body is arranged at the connecting side of the vertical emitter. Furthermore, a method for producing a surface emitting semiconductor laser is specified. | 12-09-2010 |
| 20100316083 | SUB-WAVELENGTH GRATING INTEGRATED VCSEL - A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges. | 12-16-2010 |
| 20110002355 | ELECTRICALLY-PUMPED SEMICONDUCTOR ZIGZAG EXTENDED CAVITY SURFACE EMITTING LASERS AND SUPERLUMINESCENT LEDS - A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation the optical amplifier chip includes at least two gain elements that are spaced apart and have a fill factor no greater than 0.5. As a result the total optical gain may be increased. The optical amplifier chip may be operated as a superluminescent LED. Alternately, the optical amplifier chip may be used with external optical elements to form an extended cavity laser. Individual gain elements may be operated in a reverse biased mode to support gain-switching or mode-locking. | 01-06-2011 |
| 20110051772 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a laser diode provided on a semiconductor substrate, the laser diode including a first optical waveguide having a gain waveguide, a plurality of photodiodes, a first wavelength-selective filter having periodic transmission peaks, and a second wavelength-selective filter having periodic transmission peaks, the period of the transmission peaks of the second wavelength-selective filter being different from the period of the transmission peaks of the first wavelength-selective filter. Furthermore, two photodiodes among the plurality of photodiodes are optically coupled to the first optical waveguide through the first and second wavelength-selective filters, respectively. | 03-03-2011 |
| 20110090931 | SEMICONDUCTOR DIFFRACTION GRATING DEVICE AND SEMICONDUCTOR LASER - A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and the semiconductor cladding layer. The chirped grating structure includes a first region, a second region, and a third region arranged in that order in a predetermined axis direction, the first, second, and third regions including a plurality of projections constituting a chirped grating. The plurality of projections are provided at placement positions arranged with a predetermined pitch in the predetermined axis direction. The coupling coefficient κ of the chirped grating monotonically increases in the predetermined axis direction to a predetermined value in the first region, remains flat in the second region, and monotonically decreases in the predetermined axis direction from the predetermined value in the third region. | 04-21-2011 |
| 20110090932 | MULTIPLE DISTRIBUTED FEEDBACK LASER DEVICES - Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed feedback region, the modulation region, the second distributed feedback region, and the amplification region. A first diffraction grating is disposed in the first distributed feedback region to be coupled to the active layer in the first distributed feedback region. A second diffraction grating is disposed in the second distributed feedback region to be coupled to the active layer in the second distributed feedback region. The multiple distributed feedback laser device further includes a first micro heater configured to supply heat to the first diffraction grating and a second micro heater configured to supply heat to the second diffraction grating. | 04-21-2011 |
| 20110122911 | Surface-Emitting Semiconductor Laser - A surface-emitting semiconductor laser is described, with a semiconductor chip ( | 05-26-2011 |
| 20110134954 | SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER - The present invention relates to a method that involves providing a stack of a first substrate and a InGaN seed layer formed on the first substrate, growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure, forming a first mirror layer overlaying the exposed surface of the grown InGaN layer, attaching a second substrate to the exposed surface of the mirror layer, detaching the first substrate from the InGaN seed layer and grown InGaN layer to expose a surface of the InGaN seed layer opposite the first mirror layer, and forming a second mirror layer overlaying the opposing surface of the InGaN seed layer. | 06-09-2011 |
| 20110134955 | SEMICONDUCTOR LASER DIODE DEVICE AND METHOD OF FABRICATION THEREOF - Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a partial region of the optical waveguide, there is formed an alternately repetitive pattern of a grating part possessing a distributive refractivity characteristic and a no-grating space part possessing a uniform refractivity characteristic. The no-grating space part possessing a uniform refractivity characteristic has an optical path length that is half an integral multiple of a wavelength of laser oscillation, and the grating part possessing a distributive refractivity characteristic includes at least five grating periods. | 06-09-2011 |
| 20110134956 | PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer. | 06-09-2011 |
| 20110150024 | HYBRID LASER COUPLED TO A WAVEGUIDE - A method for introducing light into a waveguide formed on the upper surface of a microelectronics substrate, by means of a distributed feedback laser device formed by the association of an SOI-type structure having a portion forming said waveguide, of a stack of III-V semiconductor gain materials partially covering the waveguide, and of an optical grating, wherein the grating step is selected so that the optical power of the laser beam circulates in a loop from the III-V stack to the waveguide. | 06-23-2011 |
| 20110164645 | Optoelectronic Device Having Light Source Emitter and Receiver Integrated - An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under a small voltage and a small signal amplitude. With the UTC-PD, the 10 Gb/s eye is passed even under zero-bias. Thus, the optoelectronic device has a high speed and power consumption is saved. | 07-07-2011 |
| 20110164646 | Laser diode array, method of manufacturing same, printer, and optical communication device - A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface. | 07-07-2011 |
| 20110170570 | CO-EXTRUDED MULTILAYER POLYMERS FILMS FOR ALL-POLYMER LASERS - A polymer film laser is provided that comprises a plurality of extruded polymer layers. The plurality of extruded polymer layers comprises a plurality of alternating dielectric layers of a first polymer material having a first refractive index and a second polymer material having second refractive index different than the first refractive index. | 07-14-2011 |
| 20110188531 | VERTICAL CAVITY SURFACE EMITTING LASER WITH IMPROVED MODE-SELECTIVITY - It is an object of the invention to provide a VCSEL having both a high beam quality or a low M | 08-04-2011 |
| 20110228805 | TWO-CAVITY SURFACE-EMITTING LASER - A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium ( | 09-22-2011 |
| 20110235667 | SEMICONDUCTOR LASER - A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator. | 09-29-2011 |
| 20110235668 | METHOD AND APPARATUS FOR SUPER RADIANT LASER ACTION IN HALF WAVELENGTH THICK ORGANIC SEMICONDUCTOR MICROCAVITIES - The disclosed device is a solid state organic semiconductor VCSEL in which the microcavity is composed of metal and dielectric mirrors and the gain layer is only λ/2n thick. The gain layer comprises a thermally evaporated 156.7 nm thick film of the laser dye DCM doped (2.5% v/v) into an Alq | 09-29-2011 |
| 20110243175 | SEGMENTED DISTRIBUTED FEEDBACK LASER - The present invention provides for a semiconductor laser having a narrow linewidth and low power consumption for optical communication applications. According to various embodiments of the invention, a semiconductor laser is provided which includes a grating layer comprising a plurality of segmented gratings, each including a non-grating portion and a grating portion. The segmented gratings are configured to enhance a fundamental mode of the semiconductor laser while sufficiently suppressing modes other than the fundamental mode, providing a narrow linewidth for example. The segmented gratings are also configured to provide an effective length longer than an actual length of the semiconductor laser, leading to smaller device areas and corresponding lower power consumption. A photonic integrated circuit is also provided which includes a plurality of semiconductor lasers, consistent with the present invention, as well as additional optical elements, all provided on a single substrate. | 10-06-2011 |
| 20110292960 | WAVELENGTH TUNABLE SEMICONDUCTOR LASER - A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion. | 12-01-2011 |
| 20110299561 | SEMICONDUCTOR LASER SILICON WAVEGUIDE SUBSTRATE, AND INTEGRATED DEVICE - A semiconductor laser includes: a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating including a phase shift, and a second diffraction grating; a second portion including a light-emitting layer made from a material different from that of the first portion; a laser region including the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating; and a mirror region including the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating. | 12-08-2011 |
| 20120093189 | MULTIMODE VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS - Various embodiments of the present invention are directed to monolithic VCSEL arrays where each VCSEL can be configured to lase at a different wavelength. In one embodiment, a monolithic surface-emitting laser array includes a reflective layer, a light-emitting layer ( | 04-19-2012 |
| 20120093190 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor laser device includes a first semiconductor stack portion that includes a grating layer and an active layer provided on the grating layer. The grating layer has a first region and second region; a diffraction grating provided in the first region; a semiconductor ridge structure portion provided on the first semiconductor stack portion and extending in a first direction; and a pair of first trenches provided along both side faces of the semiconductor ridge structure portion with the first region of the grating layer being located between the trenches. The first trenches penetrate through the grating layer. The first region of the grating layer has an end extending in a second direction intersecting with the first direction. The end of the first region of the grating layer reaches a trench. | 04-19-2012 |
| 20120114005 | SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY - Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer. | 05-10-2012 |
| 20120120977 | VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH NON-PERIODIC GRATINGS - Various embodiments of the present, invention are directed to surface-emitting lasers with the cavity including at least one single-layer, non-periodic, sub-wavelength grating. In one embodiment, a surface-emitting laser comprises a grating layer ( | 05-17-2012 |
| 20120128020 | VERTICAL CAVITY SURFACE EMITTING LASER WITH ACTIVE CARRIER CONFINEMENT - It is an object of the present invention to improve the confinement of the carriers within a VCSEL. As a general concept of the invention, it is proposed to integrate a phototransistor layer structure into the layer stack of the VCSEL. | 05-24-2012 |
| 20120163407 | Vertical-Cavity Surface-Emitting Laser Device Having Relief Structure - The present disclosure is a vertical-cavity surface-emitting laser (VCSEL) device. A relief structure is formed above or below a light emitting region by partially removing an aluminum composition layer of VCESL through an etching process. Thus, profound static performances are obtained, including low power consumption, biggest operational speed, and high ratio of data transmission to power consumption as 2.9 and 9.2 Gbps/mW under 34 and 12.5 Gbps, respectively. | 06-28-2012 |
| 20120177077 | DIODE LASER AND LASER RESONATOR FOR A DIODE LASER HAVING IMPROVED LATERAL BEAM QUALITY - A diode laser and a laser resonator for a diode laser are provided, which has high lateral beam quality at high power output, requires little adjustment effort and is inexpensive to produce. The laser resonator according to the invention comprises a gain section (GS), a first planar Bragg reflector (DBR | 07-12-2012 |
| 20120320940 | LASER DEVICE AND METHOD OF MANUFACTURE THEREOF - A laser device includes a substrate, a lower cladding layer on the substrate, an active layer on the lower cladding layer and having a disordered portion spaced from an end face of a resonator of the laser device, an upper cladding layer located on the active layer, and a diffraction grating located in a portion of a layer lying above or below the active layer, with respect to the substrate. The disordered portion intersects a boundary between a diffraction grating section, in which the diffraction grating is located, and a bulk section, in which no diffraction grating is located. | 12-20-2012 |
| 20130003771 | DISTRIBUTED FEEDBACK LASER DIODE HAVING ASYMMETRIC COUPLING COEFFICIENT AND MANUFACTURING METHOD THEREOF - Provided are a distributed feedback laser diode and a manufacturing method thereof. The distributed feedback laser diode includes a first area having a first grating layer disposed in a longitudinal direction, a second area disposed adjacent to the first area and having a second grating layer disposed in the longitudinal direction, and an active layer disposed over the first and second areas. Coupling coefficients of the first and second grating layers are made different in the first and second areas by a selective area growth method. The distributed feedback laser diode includes grating layers each having an asymmetric coefficient and is implemented within an optimal range capable of obtaining both a high front facet output and stable single mode characteristics. Thus, high manufacturing yield and low manufacturing cost can be achieved. | 01-03-2013 |
| 20130016753 | SEMICONDUCTOR LASERAANM SHIGIHARA; KimioAACI TokyoAACO JPAAGP SHIGIHARA; Kimio Tokyo JP - An 830 nm broad area semiconductor laser having a distributed Bragg reflector (DBR) structure. The semiconductor laser supports multiple horizontal transverse modes of oscillation extending within a plane perpendicular to a crystal growth direction of the laser, in a direction perpendicular to the length of the resonator of the laser. The resonator includes a diffraction grating in the vicinity of the emitting facet of the laser. The width of the diffraction grating in a plane perpendicular to the growth direction and perpendicular to the length of the resonator is different at first and second locations along the length of the resonator. The width of the diffraction grating along a direction which is perpendicular to the length of the resonator increases with increasing distance from the front facet of the semiconductor laser. | 01-17-2013 |
| 20130028282 | SEMICONDUCTOR DEVICE HAVING A VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) AND A PROTECTION DIODE INTEGRATED THEREIN AND HAVING REDUCED CAPACITANCE TO ALLOW THE VCSEL TO ACHIEVE HIGH OPERATING SPEEDS - A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds. | 01-31-2013 |
| 20130028283 | HIGH SPEED VERTICAL-CAVITY SURFACE-EMITTING LASER - There is described a high speed vertical-cavity surface-emitting laser (VCSEL) comprising a substrate and first and second distributed Bragg reflectors (DBRs) disposed on the substrate, each comprising a stack of layers of alternating refractive index. A resonant cavity is disposed between the DBRs and an active region disposed in the resonant cavity. The resonant cavity is formed of material having low refractive index and has an optical thickness in a direction perpendicular to the substrate of | 01-31-2013 |
| 20130058370 | PLANAR, HIGH NA, LOW LOSS TRANSMITTING OR REFLECTING LENSES USING SUB-WAVELENGTH HIGH CONTRAST GRATING - Planar lenses and reflectors are described comprising subwavelength high-contrast gratings (HCG) having high index of refraction grating elements spaced apart from one another in straight and/or curved segments and surrounded by low index material. The high-contrast grating is configured to receive an incident wave which excites multiple modes within the high-contrast grating and is focused for reflection and/or transmission by said high contrast grating. The width of the high contrast grating bars vary along a distribution direction of the grating bars which is perpendicular to the length of the grating bars and/or varies along the length of one or more grating bars to focus said reflection and/or transmission. The HCG is configured to provide double focusing, whose use is exemplified within a vertical cavity surface emitting laser (VCSEL) structure using focusing HCG structures for both the top and bottom mirrors. | 03-07-2013 |
| 20130058371 | SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer. | 03-07-2013 |
| 20130064263 | VERTICAL CAVITY SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREOF - The present invention discloses a manufacturing method of vertical cavity surface emitting laser. The method includes following steps: providing a substrate; forming an epitaxial layer stack including an aluminum-rich layer; forming an ion-doping mask including a ring-shaped opening; doping ions in the epitaxial layer stack through the ring-shaped opening and forming a ring-shaped ion-doped region over the aluminum-rich layer; forming an etching mask on the ion-doping mask for covering the ring-shaped opening of the ion-doping mask; etching the epitaxial layer stack through the etching mask and ion-doping mask for forming an island platform; oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region. In addition, the present invention also discloses a vertical cavity surface emitting laser manufactured by the above mentioned method. | 03-14-2013 |
| 20130114635 | Heating Elements For Multi-Wavelength DBR Laser - A multi-wavelength distributed Bragg reflector (DBR) semiconductor laser is provided where DBR heating elements are positioned over the waveguide in the DBR section and define an interleaved temperature profile that generates multiple distinct reflection peaks corresponding to distinct temperature dependent Bragg wavelengths associated with the temperature profile. Neighboring pairs of heating elements of the DBR heating elements positioned over the waveguide in the DBR section are spaced along the direction of the axis of optical propagation by a distance that is equal to or greater than the laser chip thickness b to minimize the impact of thermal crosstalk between distinct temperature regions of the interleaved temperature profile. | 05-09-2013 |
| 20130114636 | DBR Laser Diode With Symmetric Aperiodically Shifted Grating Phase - In accordance with one embodiment of the present disclosure, a DBR laser diode is provided where the wavelength selective grating of the laser diode is characterized by an aperiodically shifted grating phase φ and a Bragg wavelength λ | 05-09-2013 |
| 20130121360 | Multi-Wavelength Diode Laser Array - A multi-wavelength laser array of a plurality of emitters in a diode bar or stack where each beam is deflected by a different angle to be incident upon a uniform volume holographic grating with a portion of the beam being deflected as a feedback portion while a further portion provides a wavelength tuned output unique to each emitter. The arrangement of a uniform volume holographic grating with deflectors such as phaseplates eliminates the need to use expensive wavelength chirped gratings. | 05-16-2013 |
| 20130128911 | DIODE LASER AND METHOD FOR MANUFACTURING A HIGH-EFFICIENCY DIODE LASER - A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step. | 05-23-2013 |
| 20130279531 | SEMICONDUCTOR DEVICE HAVING A VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) AND A PROTECTION DIODE INTEGRATED THEREIN AND HAVING REDUCED CAPACITANCE TO ALLOW THE VCSEL TO ACHIEVE HIGH OPERATING SPEEDS - A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds. | 10-24-2013 |
| 20130322482 | System and Method for Protecting a Seed Laser in an EUV Light Source With a Bragg AOM - A method and apparatus for protecting the seed laser in a laser produced plasma (LPP) extreme ultraviolet (EUV) light system are disclosed in one embodiment, a Bragg AOM is used as a switch on the beam path from the seed laser to other optical components and ultimately to an irradiation site. Power is applied to the Bragg AOM and pulses from the seed laser are thus deflected onto the desired beam path rather than passing straight through the Bragg AOM. Once the pulses have passed through the Bragg AOM, power to the Bragg AOM ceases, so that any reflections from the irradiation site will pass straight through the Bragg AOM and will not be deflected back to the seed laser. Use of the Bragg AOM rather than components previously used results in lower power consumption and better protection for the seed laser. | 12-05-2013 |
| 20130343420 | SURFACE EMITTING LASER INCORPORATING THIRD REFLECTOR - Surface emitting laser structures that include a partially reflecting element disposed in the laser optical cavity are disclosed. A vertical external cavity surface emitting laser (VECSEL) structure includes a pump source configured to emit radiation at a pump wavelength, λ | 12-26-2013 |
| 20140126601 | EXTERNAL RESONATOR-TYPE SEMICONDUCTOR LASER ELEMENT AND OPTICAL ELEMENT - A ring resonator is connected to an optical amplifier. The ring resonator and optical amplifier are contained within the optical path of an optical resonator formed by a first and second reflector. The optical coupler branches part of the light conducting from the optical amplifier to the ring resonator within the optical resonator off to an output optical waveguide. | 05-08-2014 |
| 20140133510 | SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR - A surface emitting laser element includes a lower DBR formed on a substrate; an active layer formed above the lower DBR; an upper DBR formed on the active layer. The upper DBR includes a dielectric multilayer that is formed as a result of dielectrics having different refractive indexes being alternately laminated and formed, a light shielding part is formed above the upper DBR, and the light shielding part has an opening at a central area for emitting light. | 05-15-2014 |
| 20140133511 | SEMICONDUCTOR OPTICAL ELEMENT - Two or more first reflectors are formed on a substrate. Each of the first reflectors reflects the light input to its input port and returns it there, while exhibiting a reflection spectrum featuring a peak at the target wavelength. A first optical coupler is formed on the substrate to divide the light output from an optical amplifier and output the divided lights to the input ports of the two or more first reflectors, as well as combining the reflected lights from the first reflector and re-inputting the combined light to the optical amplifier. Each of the first reflectors contains a ring resonator of the same size, and the delay for the light input to the input port of a first reflector to return there after being reflected is the same for all first reflectors. | 05-15-2014 |
| 20140133512 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a ring laser including a ring resonator in which an optical gain element having an optical gain by current injection is provided, a waveguide optically coupled to the ring laser, and a reflector provided at an end portion of the waveguide and configured to reverse the advancing direction of light outputted from the ring laser and propagating in the waveguide. | 05-15-2014 |
| 20140153605 | OPTICAL DEVICE - An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough. | 06-05-2014 |
| 20140219307 | COMBINED LASER LIGHT SOURCE - A combined laser light source includes a substrate, a waveguide, a first laser source, a second laser source, and a Bragg grating. The substrate includes a top surface, a first side surface, and a second side surface. The waveguide is formed in the top surface and includes a first branch and a second branch connecting with the first branch. The first laser source connects with an entrance of the first entrance and emits a first laser beam into the first branch. The second laser source connects with an entrance of the second entrance and emits a second laser beam into the second branch. The Bragg grating is formed at an interaction of the first branch and the second branch and is configured to reflect the second laser beam into the first branch. | 08-07-2014 |
| 20140247853 | COMPOSITE SEMICONDUCTOR LIGHT SOURCE PUMPED BY A SPONTANEOUS LIGHT EMITTER - A composite light source includes a substrate having a top surface, and a first vertical light source formed in the substrate. The first light source includes least a lower mirror, a first active region above the lower mirror, wherein the first active region has a thickness sufficient when electrically pumped to emit predominantly a spontaneous vertical emission from the first active region towards the top surface having an angular range of at least (≧) 30°. A second light source is formed in the substrate above the first active region including a second active region. The spontaneous vertical emission is at a first wavelength λ | 09-04-2014 |
| 20140294030 | MULTIMODE VERTICAL CAVITY SURFACE EMITTING LASER HAVING NARROW LASER LIGHT EMITTING ANGLE - The protective film that covers the top distributed Bragg reflecting mirror has a central region and a peripheral region. The central region has a protrusion that projects relative to the peripheral region in a direction in which the laser light is emitted. The VCSEL satisfies relations below: | 10-02-2014 |
| 20140294031 | OPTICAL DEVICE AND OPTICAL MODULE - An optical device includes an active layer disposed over a semiconductor substrate, a diffraction grating disposed over the active layer, a clad layer partly disposed over the diffraction grating, at least one first burying material layer disposed beside side surfaces of end portions of the clad layer over the diffraction grating, and at least one second burying material layer disposed beside side surfaces of a center portion of the clad layer over the diffraction grating. A refractive index of the at least one first burying material layer is different from a refractive index of the at least are second burying material layer. | 10-02-2014 |
| 20140321492 | OPTICAL PULSE COMPRESSING BASED ON CHIRPED FIBER BRAGG GRATINGS FOR PULSE AMPLIFICATION AND FIBER LASERS - Techniques and devices for using a chirped fiber Bragg grating to compress amplified laser pulses. | 10-30-2014 |
| 20140321493 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers. | 10-30-2014 |
| 20150010033 | Monolithically Integrated Tunable Semiconductor Laser - A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising a laser chip having epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a passive section, wherein at least one of the reflectors is a distributed Bragg reflector section comprising a grating and configured to have a tunable reflection spectrum, wherein the laser is provided with a common earth electrode, wherein control electrodes are provided on the optical waveguide in at least the optical gain section and the at least one distributed Bragg reflector section, wherein the passive section is provided with an electrode or electrical tracking on the optical waveguide, the passive section is configured not to be drivable by an electrical control signal, and no grating is present within the passive section. | 01-08-2015 |
| 20150036710 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. | 02-05-2015 |
| 20150043606 | LIGHT EMITTING ELEMENT AND METHOD OF PRODUCING SAME - Light emitting elements, and methods of producing the same, the light emitting elements including: a laminated structure, the laminated structure including a first compound semiconductor layer that includes a first surface and a second surface facing the first surface, an active layer that is in contact with the second surface of the first compound semiconductor layer, and a second compound semiconductor layer; where the first surface of the first compound semiconductor layer has a first surface area and a second surface area, the first and second surface areas being different in at least one of a height or a roughness, a first light reflection layer is formed on at least a portion of the first surface area, and a first electrode is formed on at least a portion of the second surface area. | 02-12-2015 |
| 20150085891 | SEMICONDUCTOR LASER DEVICE ASSEMBLY - A semiconductor laser device assembly includes (A) a semiconductor laser element and (B) a diffraction grating that configures an external resonator, returns diffraction light other than zero-th order diffraction light to the semiconductor laser element, and outputs the zero-th order diffraction light to the outside. An extension direction of a diffraction surface of the diffraction grating and a main vibration direction of a field of a laser beam incident on the diffraction grating are substantially parallel to each other. | 03-26-2015 |
| 20150092807 | TUNABLE SYSTEM FOR GENERATING AN OPTICAL PULSE BASED ON A DOUBLE-PASS SEMICONDUCTOR OPTICAL AMPLIFIER - A system for generating a shaped optical pulse is disclosed. The system includes a master oscillator for generating an initial optical pulse, which is then directed to a semiconductor optical amplifier to amplify a portion of the initial optical pulse. The amplified pulse is reflected from a fiber Bragg grating to spectrally clean the amplified pulse and the reflected portion is returned back through the semiconductor optical amplifier. The semiconductor optical amplifier is activated a second time to amplify the reflected portion of the pulse. The time delay between the two activations of the semiconductor optical amplifier is selected to generate an output pulse with desired duration and/or amplitude profile over time. | 04-02-2015 |
| 20150131690 | Wavelength Stabilized Diode Laser - A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Bragg grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability. | 05-14-2015 |
| 20150131691 | SILICON DBR STRUCTURE-INTEGRATED LIGHT ELEMENT, AND PREPARATION METHOD - The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner. | 05-14-2015 |
| 20150139260 | VCSEL WITH INTRACAVITY CONTACTS - The present invention relates to a laser device being formed of at least one VCSEL ( | 05-21-2015 |
| 20150139261 | SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR DBR LAYER - A semiconductor device includes a silicon substrate, alight-emitting function layer made of nitride semiconductor, and at least one multilayer film in which two to four lamination pairs are laminated, the lamination pair being a laminated body of a first semiconductor layer made of Al | 05-21-2015 |
| 20150146757 | SEMICONDUCTOR LASER MODULE - A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit. | 05-28-2015 |
| 20150311674 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating. | 10-29-2015 |
| 20160020582 | COMPACT DISTRIBUTED BRAGG REFLECTORS - Ultra compact DBRs, VCSELs incorporating the DBRs and methods for making the DBRs are provided. The DBRs are composed of a vertical reflector stack comprising a plurality of adjacent layer pairs, wherein each layer pair includes a layer of single-crystalline Group IV semiconductor and an adjacent layer of silicon dioxide. | 01-21-2016 |
| 20160056612 | LASER DEVICE AND PROCESS FOR FABRICATING SUCH A LASER DEVICE - The invention relates to a III-V heterostructure laser device ( | 02-25-2016 |
| 20160064897 | SEMICONDUCTOR LASER - A semiconductor laser includes a semiconductor substrate, an active region provided over the semiconductor substrate and having an active layer and a first diffraction grating, and a guiding region provided over the semiconductor substrate and having a guiding layer continuously extending from the active layer in an optical axis direction and a second diffraction grating continuously extending from the first diffraction grating in the optical axis direction. A grating period of the second diffraction grating is uniform, the first diffraction grating has a first part in which a grating period becomes uneven, and a grating formation density of the first diffraction grating is smaller than the grating formation density of the second diffraction grating. | 03-03-2016 |
| 20160087405 | External Resonator-Type Light Emitting Device - An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied. | 03-24-2016 |
| 20160111852 | OPTICAL DEVICE HAVING A SUBSTRATE AND A LASER UNIT THAT EMITS LIGHT INTO THE SUBSTRATE - An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough. | 04-21-2016 |
| 20160134083 | Mode Control in Vertical-Cavity Surface-Emitting Lasers - Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed. | 05-12-2016 |
| 20160134084 | SEMICONDUCTOR LASER WITH INTEGRATED PHOTOTRANSISTOR - The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region ( | 05-12-2016 |
| 20160156154 | SEMICONDUCTOR OPTICAL ELEMENT AND SURFACE-EMITTING SEMICONDUCTOR OPTICAL ELEMENT | 06-02-2016 |
| 20160156157 | VERTICAL CAVITY SURFACE EMITTING LASER ARRAY AND METHOD FOR MANUFACTURING THE SAME | 06-02-2016 |
| 20160164249 | SEMICONDUCTOR LASER DIODE AND LASER ARRAY IMPLEMENTING THE SAME - A semiconductor laser diode (LD) is disclosed. The LD provides a sampled grating distributed feedback (SG-DFB region) region and a distributed feedback (DFB) region accompanied with a region to shift the phase of light between two regions. Because the coupling coefficient κ for the light forwarding the facet of the SG-DFB region is lowered, while, the coupling coefficient for the light forwarding the facet of the DFB region is kept in high, the optical output power extracted from the facet of the SG-DFB region is enhanced. | 06-09-2016 |
| 20190148913 | GUIDE TRANSITION DEVICE WITH DIGITAL GRATING DEFLECTORS AND METHOD | 05-16-2019 |
