| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 372450011 | With strained layer | 71 |
| 20080198887 | Semiconductor laser device and method of fabricating the same - A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer. | 08-21-2008 |
| 20080198888 | Semiconductor laser apparatus and optical amplifier apparatus - A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor. Specific methods includes the following two methods, that is, a method of forming a tunneling junction structure in the compound semiconductor and another method of laterally forming a P-I-N junction to the compound semiconductor. | 08-21-2008 |
| 20080205466 | RIDGE WAVEGUIDE LASER WITH A COMPRESSIVELY STRAINED LAYER - In one example embodiment, a ridge waveguide (RWG) laser includes a substrate, an active layer disposed above the substrate, a ridge structure disposed above the active layer, a contact layer disposed above the ridge structure, a compressively strained dielectric passivation layer disposed above the active layer and extending along either side of the ridge structure such that the passivation layer is in substantial contact with each side of the ridge structure, and a top metallic contact layer disposed above both the dielectric passivation layer and the contact layer and layered alongside the portions of the dielectric passivation layer that contact the sides of the ridge structure. | 08-28-2008 |
| 20080212633 | SURFACE EMITTING LASER DEVICE - An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer is arranged in the resonator. A current confinement layer including a selectively oxidized portion is arranged on an upper side of the strained active layer. The current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer. | 09-04-2008 |
| 20080219311 | Optical structures including selectively positioned color centers, photonic chips including same, and methods of fabricating optical structures - Various aspects of the present invention are directed to optical structures including selectively positioned color centers, methods of fabricating such optical structures, and photonic chips that utilize such optical structures. In one aspect of the present invention, an optical structure includes an optical medium having a number of strain-localization regions. A number of color centers are distributed within the optical medium in a generally selected pattern, with at least a portion of the strain-localization regions including one or more of the color centers. In another aspect of the present invention, a method of positioning color centers in an optical medium is disclosed. In the method, a number of strain-localization regions are generated in the optical medium. The optical medium is annealed to promote diffusion of at least a portion of the color centers to the strain-localization regions. | 09-11-2008 |
| 20080247433 | NITRIDE SEMICONDUCTOR LASERS AND ITS MANUFACTURING METHOD - A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current. | 10-09-2008 |
| 20080273564 | Semiconductor Laser Element and Semiconductor Laser Element Array - A semiconductor laser device | 11-06-2008 |
| 20080279242 | PHOTONIC CRYSTAL STRUCTURES AND METHODS OF MAKING AND USING PHOTONIC CRYSTAL STRUCTURES - A light emitting device having a buried photonic bandgap (PBG) structure is created using a relatively simple fabrication method known as epitaxial layer overgrowth (ELOG). By burying the PBG structure, the difficulties and disadvantages associated with the known technique of etching holes into a LED emission surface to form the PBG structure are avoided. | 11-13-2008 |
| 20080279243 | Distributed Feedback (Dfb) Quantum Dot Laser Structure - A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure. | 11-13-2008 |
| 20080285610 | MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS - Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide. | 11-20-2008 |
| 20080298412 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor laser device having a MQW structure composed of an active layer, a p-type second clad layer, and a p-type first clad layer sequentially stacked on an n-type clad layer provided on an n-type GaAs substrate is provided. In the semiconductor laser device, the n-type clad layer and the p-type first clad layer are lattice-matched to the GaAs substrate. A negative strain layer is provided in an intermediate layer of the first clad layer, in which a positive strain layer is provided on both surfaces or one surface of the negative strain layer. | 12-04-2008 |
| 20080298413 | Low Cost InGaAlN Based Lasers - A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length l | 12-04-2008 |
| 20080304529 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs. The Al composition ratios of the pair of AlGaAs cladding layers are 0.4 or less. The Al composition ratios are set such that the refractive indices of the pair of AlGaAs cladding layers do not exceed those of the pair of InGaAsP guiding layers. | 12-11-2008 |
| 20080310472 | LASER DIODE CHIP AND ITS PRODUCTION METHOD - A laser diode chip that yields high irradiance and radiant efficiency, and that emits light having a broad wavelength width and can be used as an element in a light source for an illumination device, and its production method. The laser diode chip has at least a first clad layer, an active layer, and a second clad layer stacked in that order on a substrate, is constructed of a specified combination of constituent materials for the first clad layer, active layer, and second clad layer, and has multiple, parallel, slot-shaped concavities formed in the upper surface of the second clad layer, in each of which a liquid oxide film is baked to form a current arctation layer. Light emitting points are formed in the active layer in each of the light emitting unit areas demarcated by the current arctation layers, the maximum depth of which is 5.0 μm or less. | 12-18-2008 |
| 20080310473 | SEMICONDUCTOR LASER - A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E | 12-18-2008 |
| 20090010290 | Semiconductor chip and method for producing a semiconductor chip - A semiconductor chip ( | 01-08-2009 |
| 20090010291 | Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms - A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer. | 01-08-2009 |
| 20090016397 | Nitride semiconductor light emitting device and method for manufacturing the same - A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from | 01-15-2009 |
| 20090034569 | Monolithic semiconductor laser - There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element ( | 02-05-2009 |
| 20090052487 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other. | 02-26-2009 |
| 20090059984 | Nitride-based semiconductor light-emitting device - A nitride-based semiconductor light-emitting device includes at least one n-type nitride-based semiconductor layer, an active layer having a quantum well structure, and at least one p-type nitride-based semiconductor layer successively stacked on a substrate, the active layer including an InGaN well layer and a barrier layer containing at least one of GaN and InGaN and having a light-emission wavelength in a range of 430 nm to 580 nm, the well layer having a thickness in a range of 1.2 nm to 4.0 nm, and the barrier layer being more than 10 times and at most 45 times as thick as the well layer. | 03-05-2009 |
| 20090067463 | STRUCTURES HAVING LATTICE-MISMATCHED SINGLE-CRYSTALLINE SEMICONDUCTOR LAYERS ON THE SAME LITHOGRAPHIC LEVEL AND METHODS OF MANUFACTURING THE SAME - A semiconductor substrate containing a single crystalline group IV semiconductor is provided. A single crystalline lattice mismatched group IV semiconductor alloy layer is epitaxially grown on a portion of the semiconductor layer, while another portion of the semiconductor layer is masked. The composition of the lattice mismatched group IV semiconductor alloy layer is tuned to substantially match the lattice constant of a single crystalline compound semiconductor layer, which is subsequently epitaxially grown on the single crystalline lattice mismatched group IV semiconductor alloy layer. Thus, a structure having both the group IV semiconductor layer and the single crystalline compound semiconductor layer is provided on the same semiconductor substrate. Group IV semiconductor devices, such as silicon devices, and compound semiconductor devices, such as GaAs devices having a laser emitting capability, may be formed on the on the same lithographic level of the semiconductor substrate. | 03-12-2009 |
| 20090067464 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes: a laminated body including an active layer, a cladding layer provided on the active layer, and a contact layer provided on the cladding layer, the laminated body having a first and second end face forming a resonator for light emitted from the active layer; and an electrode provided on the contact layer and including an ohmic section injecting a current into the active layer and a first current adjustment section provided between one end of the ohmic section and the first end face. The ohmic section contains a metal which has a smaller work function than any metal constituting the current adjustment section. | 03-12-2009 |
| 20090074022 | DUAL-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME - In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element. | 03-19-2009 |
| 20090080483 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure. | 03-26-2009 |
| 20090122823 | Monolithically integrated laser diode chip having a construction as a multiple beam laser diode - A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate ( | 05-14-2009 |
| 20090154514 | OPTICAL AMPLIFIER-INTEGRATED SUPER LUMINESCENT DIODE AND EXTERNAL CAVITY LASER USING THE SAME - Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD. | 06-18-2009 |
| 20090154515 | SEMICONDUCTOR LIGHT EMITTING DEVICE - In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided. | 06-18-2009 |
| 20090238227 | Semiconductor light emitting device - A semiconductor light emitting device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane, and has a quantum well layer containing In in a light emitting layer. A strain compensation layer made of a group III nitride semiconductor containing Al and having a lattice constant smaller than the lattice constant of the quantum well layer in a strain-free state is interposed in the light emitting layer of a quantum well structure having the quantum well layer and a barrier layer or in an adjacent layer adjacent to the light emitting layer. | 09-24-2009 |
| 20090257467 | Group III Nitride Semiconductor Device and Method for Manufacturing Group III Nitride Semiconductor Device - A laser diode | 10-15-2009 |
| 20090290611 | SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR - A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×10 | 11-26-2009 |
| 20090304037 | Laser Diode, Optical Pickup Device, Optical Disk Apparatus, and Optical Communications Equipment - A laser diode capable of reducing a radiating angle θ⊥ in the vertical direction, an optical pickup device, an optical disk apparatus, and optical communications equipment, all equipped with the laser diode which increases optical coupling efficiency. It has a first cladding layer of the first conductive type formed on a substrate, with an active layer on top of the first cladding layer and a second cladding layer of the second conductive type on top of the active layer. In at least the first or second cladding layer, it is formed of at least one optical guide layer having a higher refractive index than the first or second cladding layer and operating to expand a beam waist in the waveguide. This operation contributes to widening a region in which to shut up light, enabling a radiating angle θ⊥ in the vertical direction to be reduced. | 12-10-2009 |
| 20090310640 | MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A III-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III-nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9×10 | 12-17-2009 |
| 20100002740 | Articulated glaze cladding for laser components and method of encapsulation - A glaze encapsulated solid-state laser component. The novel laser component includes a core and a cladding of ceramic glaze disposed on a surface of the core. In an illustrative embodiment, the core is fabricated from a laser gain medium and the cladding material is a multi-oxide eutectic ceramic glaze having a refractivity slighter lower than the refractivity of the gain medium, such that the glaze layer forms a step-index refractivity interface cladding that can effectively suppress parasitic oscillations in the core gain medium. The glaze cladding can be applied by coating the core with the glaze and then firing the glaze coated core, or by fabricating pre-formed cladding strips from the ceramic glaze in a first firing cycle, mounting the pre-formed strips to the core, and then fusing the pre-formed strips to the core in a secondary firing cycle. | 01-07-2010 |
| 20100008391 | Nitride based semiconductor device and fabrication method for the same - A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. | 01-14-2010 |
| 20100020836 | USE OF CURRENT CHANNELING IN MULTIPLE NODE LASER SYSTEMS AND METHODS THEREOF - Current channels, blocking areas, or strips in a semiconductor laser are used to channel injected current into the antinodal region of the optical standing wave present in the optical cavity, while restricting the current flow to the nodal regions. Previous devices injected current into both the nodal and antinodal regions of the wave, which is fed by the population inversion created in the active region by the injected electrons and holes, but inversion created in the nodal regions is lost to fluorescence or supports the creation of undesirable competing longitudinal modes, causing inefficiency. Directing current to the antinodal regions where the electric field is at its maximum causes a selected longitudinal mode to preferentially oscillate regardless of where the longitudinal mode lies with respect to the gain curve. In one embodiment, exacting fabrication of the Fabry-Perot cavity correlates the current channels to antinodal regions, vis-a vis current blocking areas, strips or segmented layers. | 01-28-2010 |
| 20100034230 | ARSENIC DOPED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE - A semiconductor light emitting device includes: a substrate; a first clad layer formed above the substrate and made of AlGaInP mixed crystal of a first conductivity type; an active layer formed on the first clad layer and made of AlGaInP mixed crystal; and a second clad layer formed on the active layer and made of AlGaInP mixed crystal of a second conductivity type opposite to the first conductivity type, wherein the first clad layer and the second clad layer each have a band gap wider than a band gap of the active layer, and at least one of the active layer and the first and second clad layers is doped with arsenic at an impurity concentration level not changing the band gap. Carbon capturing is suppressed, and surface morphology is suppressed from being degraded. | 02-11-2010 |
| 20100046567 | PROPAGATION OF MISFIT DISLOCATIONS FROM BUFFER/SI INTERFACE INTO SI - Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled. | 02-25-2010 |
| 20100074292 | Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding - The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer. | 03-25-2010 |
| 20100118906 | SEMICONDUCTOR LASER - A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain against the GaAs, and a barrier layer having AlGaInP that has substantially zero strain against the GaAs, the well layers and the barrier layer being alternately stacked; a pair of first AlGaInP layers that has substantially zero strain against the GaAs, and is provided so that the first AlGaInP layers contact upper and lower surfaces of the multiple quantum well active layer respectively; and a pair of second AlGaInP layers that has a compressive strain against the GaAs, and is provided so that the second AlGaInP layers contact the pair of first AlGaInP layers respectively. | 05-13-2010 |
| 20100118907 | SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF - A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al | 05-13-2010 |
| 20100158063 | TUNABLE LASER WITH A DISTRIBUTED BRAGG GRATING COMPRISING A BRAGG SECTION MADE OF STRAINED BULK MATERIAL - The general field of the invention is that of tunable semiconductor devices with distributed Bragg grating, and more particularly that of tunable lasers with distributed Bragg grating termed DBRs. The device according to the invention comprises a passive Bragg section comprising a material whose optical index variations are controlled by an injection current, said material of the Bragg section is a strained bulk material, the strain applied to the bulk material being equal to at least 0.1%. | 06-24-2010 |
| 20100158064 | SEMICONDUCTOR LIGHT EMITTER - A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer. | 06-24-2010 |
| 20100226403 | LASER DIODE DEVICE - A laser diode device with which a low voltage is realized is provided. The laser diode device includes: a substrate; a semiconductor laminated structure including a first conductive cladding layer, an active layer, and a second conductive cladding layer on one face side of the substrate and having a contact layer as the uppermost layer, in which a protrusion is formed in the contact layer and the second conductive cladding layer; and an electrode provided on the contact layer. The contact layer has a concavo-convex structure on a face on the electrode side, and the electrode is contacted with the contact layer at contact points of a top face, a side face, and a bottom face of the concavo-convex structure. | 09-09-2010 |
| 20100284433 | SEMICONDUCTOR LASER DEVICE AND DISPLAY - A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device ( | 11-11-2010 |
| 20110026555 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS - A surface emitting laser includes a pair of multilayer mirrors disposed opposing to each other, and an active layer disposed between the multilayer mirrors. In at least one multilayer mirror of the pair of multilayer mirrors, a plurality of first pair layers are stacked, each first pair layer is formed from a high-refractive index layer having a first strain and a low-refractive index layer having a second strain; and a second pair layer is included, the second pair layer is formed of one of the high-refractive index layer and the low-refractive index layer of the first pair layer in which one of the high-refractive index layer and the low-refractive index layer of the first pair layer is replaced with a layer formed from a quaternary or higher mixed crystal semiconductor material having a third strain. | 02-03-2011 |
| 20110051769 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion | 03-03-2011 |
| 20110064107 | VERTICAL-CAVITY SURFACE EMITTING LASER - By making use of a vertical cavity surface emitting laser element ( | 03-17-2011 |
| 20110075695 | III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE - In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the <0001> axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the first dielectric multilayer film is smaller than a thickness of the second dielectric multilayer film. | 03-31-2011 |
| 20110164640 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device comprises: a semiconductor light emitting element including semiconductor layers, including an active layer having a quantum well structure and epitaxially grown on a semiconductor substrate; and a submount on which the semiconductor light emitting element is mounted. Strain in the active layer after mounting the semiconductor light emitting element on the submount is larger than strain in the active layer after epitaxial growth of the active layer. The strain in the active layer during the epitaxial growth results in the surface of the semiconductor layers being a mirror surface. The strain in the active layer after the semiconductor light emitting element is mounted on the submount would not result in a mirror surface if present in the active layer at the epitaxial growth. | 07-07-2011 |
| 20110164641 | OPTICAL SEMICONDUCTOR DEVICE AND PUMPING LIGHT SOURCE FOR OPTICAL FIBER AMPLIFIER - A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated. | 07-07-2011 |
| 20110176571 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer. | 07-21-2011 |
| 20110235666 | SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THEREOF - A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction. | 09-29-2011 |
| 20110243171 | NITRIDE-BASED SEMICONDUCTOR LASER DEVICE - This nitride-based semiconductor laser device includes an active layer made of a nitride-based semiconductor and a p-type cladding layer, made of a nitride-based semiconductor, formed on the active layer. The refractive index in a region of the p-type cladding layer closer to the active layer is lower than the refractive index in another region of the p-type cladding layer opposite to the active layer. | 10-06-2011 |
| 20110261854 | SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF - A semiconductor laser includes a semiconductor substrate and a resonator formed over the semiconductor substrate and containing a nitride semiconductor layer. A strain exerting on a region near the facet of the resonator is smaller than a strain exerting on the region between the regions near the facet. | 10-27-2011 |
| 20110286487 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes, on an n-type GaAs substrate, an n-type GaAs contact layer, an n-type first quantum well heterobarrier layer, an n-type AlGaInP cladding layer, a strained quantum well active layer (a first guide layer, GaInP well layers, AlGaInP barrier layers, and a second guide layer), a p-type AlGaInP cladding layer, a p-type GaInP intermediate layer, and a p-type GaAs contact layer, which are formed in this stated order. The semiconductor laser device can perform high-temperature and high-power operation at a lower operating voltage. | 11-24-2011 |
| 20110292957 | GAN-BASED LASER DIODES WITH MISFIT DISLOCATIONS DISPLACED FROM THE ACTIVE REGION - A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading dislocation density on the order of approximately 1×10 | 12-01-2011 |
| 20110317731 | SEMICONDUCTOR DEVICE - A semiconductor laser includes a P-type InP substrate and a P-type InP cladding layer, an AlGaInAs strained quantum well active layer, an N-type InP cladding layer, a P-type InP buried layer, an N-type InP buried layer, a P-type InP buried layer, an N-type InP layer, an N-type InP contact layer, an SiO | 12-29-2011 |
| 20120033698 | NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME - A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from Al | 02-09-2012 |
| 20120076166 | SINGLE PHOTON SOURCE - An embodiment of the invention relates to a single-photon source for emitting single photons, comprising a cavity having a first mirror and a second mirror and exhibiting a longitudinal resonance frequency between the first and second mirror; at least one quantum dot arranged inside said cavity, said quantum dot being strain-dependent and configured to generate radiation at a strain-dependent radiation frequency; a device capable of exciting the quantum dot to generate radiation; a piezoelectric crystal being arranged outside the cavity and mechanically coupled to the second mirror's outer surface, said piezoelectric crystal configured to receive a control voltage and capable of applying either a laterally tensile and vertically compressive strain to both the cavity and the quantum dot, or a laterally compressive and vertically tensile strain to both the cavity and the quantum dot, depending on the control voltage's polarity; wherein, in response to said strain, the resonance frequency and the radiation frequency shift in opposite directions. | 03-29-2012 |
| 20120207186 | TERAHERTZ QUANTUM CASCADE LASERS (QCLS) - Quantum cascade lasers (QCLs), and methods of manufacture of QCLs, comprising an active portion. In some embodiments, the active portion can comprise: a plurality of tensiley strained quantum barrier layers, each comprising Ga | 08-16-2012 |
| 20120213240 | STRAIN BALANCED LASER DIODE - According to the concepts of the present disclosure, laser diode waveguide configurations are contemplated where the use of Al in the waveguide layers of the laser is presented in the form of InGaN/Al(In)GaN waveguiding superstructure comprising optical confining wells (InGaN) and strain compensating barriers (Al(In)GaN). The composition of the optical confining wells is chosen such that they provide strong optical confinement, even in the presence of the Al(In)GaN strain compensating barriers, but do not absorb lasing emission. The composition of the strain compensating barriers is chosen such that the Al(In)GaN exhibits tensile strain that compensates for the compressive strain of InGaN optical confinement wells but does not hinder the optical confinement. | 08-23-2012 |
| 20120263206 | SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF - A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution. | 10-18-2012 |
| 20120269222 | NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE - A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer. | 10-25-2012 |
| 20120327967 | GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more. | 12-27-2012 |
| 20130142210 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding. | 06-06-2013 |
| 20130208751 | OPTICAL SEMICONDUCTOR DEVICE - In a BH laser which uses InGaAlAs-MQW in an active layer, Al-based semiconductor multi-layer films including an InP buffer layer and an InGaAlAs-MQW layer, and an InGaAsP etching stop layer are formed in a mesa shape, and a p type InP burial layer is buried in side walls of the mesa shape. An air ridge mesa-stripe of a lateral center that is substantially the same as that of the mesa shape is formed on the mesa shape. According to the present structure, a leakage current can be considerably reduced, the light confinement coefficient can be made to be larger than in a BH laser in the related art, and thereby it is possible to implement a semiconductor laser with a low leakage current and a high relaxation oscillation frequency. | 08-15-2013 |
| 20140064313 | SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF - In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains AI, Ga and As as major components, a semiconductor layer containing AI, In and P as major components such that the semiconductor layer containing AI, In and P as major components is provided adjacent to the semiconductor layer that contains AI, Ga and As as major components. Further, an interface between the semiconductor layer containing AI, Ga and As as major components and the semiconductor layer containing AI, In and P as major components is coincident to a location of a node of electric field strength distribution. | 03-06-2014 |
| 20140185640 | Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin Films and Nanostructures - Structures and methodologies to obtain lasing in indirect gap semiconductors such as Ge and Si are provided and involves excitonic transitions in the active layer comprising of at least one indirect gap layer. Excitonic density is increased at a given injection current level by increasing their binding energy by the use of quantum wells, wires, and dots with and without strain. Excitons are formed by holes and electrons in two different layers that are either adjacent or separated by a thin barrier layer, where at least one layer confining electrons and holes is comprised of indirect gap semiconductor such as Si and Ge, resulting in high optical gain and lasing using optical and electrical injection pumping. In other embodiment, structures are described where excitons formed in an active layer confining electrons in the direct gap layer and holes in the indirect gap layer; where layers are adjacent or separated by a thin barrier layer. The carrier injection structures are configured as p-n junctions and metal-oxide-semiconductor (MOS) field-effect transistors. The optical cavity is realized to confine photons. In the case of MOS structures, electrons from the inversion layer, formed under the gate at voltages above threshold, are injected into one or more layers comprising of quantum wells (2-d), quantum wires (1-d) and quantum dots (0-d) structures. The confinement of photons emitted upon electron-hole recombination produces lasing in active layer comprising of dots/wells. Bipolar transistor structures can also be configured as lasers. | 07-03-2014 |
| 20140355636 | SEMICONDUCTOR OPTICAL ELEMENT - In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer | 12-04-2014 |
| 20140369372 | Tensile Strained Semiconductor Photon Emission and Detection Devices and Integrated Photonics System - Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. | 12-18-2014 |
