Class / Patent application number | Description | Number of patent applications / Date published |
365157000 | Magnetostrictive or piezoelectric | 9 |
20090016095 | NON-VOLATILE SRAM MEMORY CELL EQUIPPED WITH MOBILE GATE TRANSISTORS AND PIEZOELECTRIC OPERATION - The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate. | 01-15-2009 |
20100073997 | PIEZO-DRIVEN NON-VOLATILE MEMORY CELL WITH HYSTERETIC RESISTANCE - A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM. | 03-25-2010 |
20100080047 | SPIN CURRENT GENERATOR FOR STT-MRAM OR OTHER SPINTRONICS APPLICATIONS - Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired. | 04-01-2010 |
20100080048 | STT-MRAM CELL STRUCTURE INCORPORATING PIEZOELECTRIC STRESS MATERIAL - A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell. | 04-01-2010 |
20120250398 | MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, AND MAGNETIC MEMORY - A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire. | 10-04-2012 |
20130163313 | MAGNETOELECTRIC MEMORY - Magnetoelectric memory element comprising: a magnetic element (ELM) that has two equilibrium directions (P | 06-27-2013 |
20130223139 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a fin formed on a semiconductor substrate; a piezoelectric element that applies stress to the fin; a gate electrode that applies voltage to the fin and the piezoelectric element; and source/drain regions formed on the fin so as to sandwich a channel region formed on the fin. | 08-29-2013 |
20140169078 | PIEZOELECTRONIC MEMORY - A memory element includes a first piezotronic transistor coupled to a second piezotronic transistor; the first and second piezotronic transistors each comprising a piezoelectric (PE) material and a piezoresistive (PR) material, wherein an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material. | 06-19-2014 |
20160005949 | DEVICES AND METHODS FOR CONTROLLlNG MAGNETIC ANISTROPY WITH LOCALIZED BIAXIAL STRAIN IN A PIEZOELECTRIC SUBSTRATE - Devices and methods for controlling magnetic anisotropy and orientation of magnetic single domain structures between stable states are provided based on piezoelectric thin films and patterned electrodes. By using patterned electrodes, piezoelectric strain is manipulated to achieve a highly localized biaxial strain in a piezoelectric substrate and rotate the magnetic anisotropy of magnetic materials. Reorientation of a magnetic single domain between different stable states is accomplished by pulsing voltage across pairs of electrodes. Since only a small region surrounding the electrodes is strained, the methods can be applied to arrays of indexed magnetic elements and to piezoelectric thin films clamped to silicon base substrates. | 01-07-2016 |