| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 365151000 | Molecular or atomic | 25 |
| 20080212361 | NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME - Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell. | 09-04-2008 |
| 20080219041 | Processing Systems and Methods for Molecular Memory - Molecular memories, i.e., memories that incorporate molecules for charge storage, are disclosed. Molecular memory cells, molecular memory arrays, and electronic devices including molecular memory are also disclosed, as are processing systems and methods for manufacturing molecular memories. Methods of manufacturing molecular memories that enable semiconductor devices and interconnections to be manufactured monolithically with molecular memory are also disclosed. | 09-11-2008 |
| 20080225572 | CIRCUIT ARRAYS HAVING CELLS WITH COMBINATIONS OF TRANSISTORS AND NANOTUBE SWITCHING ELEMENTS - Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements. | 09-18-2008 |
| 20080232155 | MOLECULAR BATTERY MEMORY DEVICE AND DATA PROCESSING SYSTEM USING THE SAME - Each memory cell of a molecular battery memory device includes a combination of a molecular battery and a selection transistor, and a parasitic capacitance is present in the molecular battery. A PN junction is present in the selection transistor, and is inversely biased. Therefore, a junction leak current flows. Accordingly, a charge accumulated in the parasitic capacitance is gradually discharged by a junction leak of the selection transistor, and a final potential of a node decreases toward a substrate potential Vs of the transistor. However, a difference between a substrate potential Vs and a reference potential Vp (=Vs−Vp) is set substantially equal to an open-circuit voltage of the molecular battery. Because the potential of the node converges to the open-circuit voltage without exception from the viewpoint of a plate wiring, an S/N ratio at the data reading time can be increased. | 09-25-2008 |
| 20080232156 | Method using a synthetic molecular spring device in a system for dynamically controlling a system property and a corresponding system thereof - Using a synthetic molecular spring device in a system for dynamically controlling a system property, such as momentum, topography, and electronic behavior. System features (a) the synthetic molecular spring device having (i) at least one synthetic molecular assembly each featuring at least one chemical unit including at least one: (1) atom; (2) complexing group complexed to at least one atom; (3) axial ligand reversibly physicochemically paired with at least one complexed atom; and (4) substantially elastic molecular linker; and, (ii) an activating mechanism directed to at least one atom-axial ligand pair; and, (b) a selected unit operatively coupled to synthetic molecular assembly, and exhibiting the system property. Activating mechanism sends an activating signal to atom-axial ligand pairs, for physicochemically modifying atom-axial ligand pairs, thereby activating at least one cycle of spring-type elastic reversible transitions between contracted and expanded linear conformational states of substantially elastic molecular linkers, causing dynamically controllable change in the system property. | 09-25-2008 |
| 20080239790 | METHOD TO FORM A MEMORY CELL COMPRISING A CARBON NANOTUBE FABRIC ELEMENT AND A STEERING ELEMENT - A method to form a rewriteable nonvolatile memory cell is disclosed, the cell comprising a steering element in series with a carbon nanotube fabric. The steering element is preferably a diode, but may also be a transistor. The carbon nanotube fabric reversibly changes resistivity when subjected to an appropriate electrical pulse. The different resistivity states of the carbon nanotube fabric can be sensed, and can correspond to distinct data states of the memory cell. A first memory level of such memory cells can be monolithically formed above a substrate, a second memory level monolithically formed above the first, and so on, forming a highly dense monolithic three dimensional memory array of stacked memory levels. | 10-02-2008 |
| 20080239791 | Nano-Electronic Memory Array - A memory device includes an array of memory cells disposed in rows and columns and constructed over a substrate, each memory cell comprising a first signal electrode, a second signal electrode, and a nano-layer disposed in the intersecting region between the first signal electrode and the second signal electrode; a plurality of word lines each connecting the first signal electrodes of a row of memory cells; and a plurality of bit lines each connecting the second signal electrodes of a column of memory cells. | 10-02-2008 |
| 20090003039 | Electromechanical Memory, Electric Circuit Using the Same, and Method of Driving Electromechanical Memory - A memory element which has high affinity with a conventional semiconductor process, which has a switching function of completely interrupting electric conduction paths by in a mechanical manner, and in which nonvolatile information recording is enabled is realized. An electromechanical memory which is formed on a substrate, which is formed by interposing a memory cell by electrodes, and which has a movable electrode that is a beam stretched in the air via a post portion is realized. According to the configuration, a nonvolatile memory can be realized by a simple structure, and it is possible to realize a high-performance electromechanical memory which is conventionally difficult to be realized, and in which the power consumption is low and the cost is low, and an electric apparatus using it. | 01-01-2009 |
| 20090003040 | Method and System For Encoding to Eliminate Parasitics in Crossbar Array Memories - A method of encoding data stored in a crossbar memory array, such as a nanowire crossbar memory array, to enable significant increases in memory size, modifies data words to have equal numbers of ‘1’ bits and ‘0’ bits, and stores the modified words together with information enabling the original data to be retrieved upon being read out from memory. | 01-01-2009 |
| 20090003041 | Semiconductor memory device and read method thereof - A semiconductor memory device comprises a plurality of memory cells each capable of storing at least three different states; a first sense amplifier for amplifying a ternary potential read out in accordance with a state stored in a selected memory cell based on a comparison with a first reference potential; and a second sense amplifier for amplifying a ternary potential read out in accordance with a state stored in the selected memory cell based on a comparison with a second reference potential. In the semiconductor memory device, the ternary potential comprises a high potential, a medium potential and a low potential, the first reference potential is set between the low potential and the medium potential, and the second reference potential is set between the high potential and the medium potential. | 01-01-2009 |
| 20090059654 | HIGH DENSITY MAGNETIC MEMORY BASED ON NANOTUBES - A novel magnetic memory cell utilizing nanotubes as conducting leads is disclosed. The magnetic memory cell may be built based on MTJ (Magnetic Tunnel Junction) or GMR (Giant Magneto Resistance) sensors or devices of similar nature. A SET (Single Electron Transistor) made of semiconducting nanotubes may be used as access devices and/or to build peripheral circuitry. | 03-05-2009 |
| 20090116277 | NANO-ELECTRONIC MEMORY ARRAY - Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the first layer having one or more NANO-bonding areas; self-assembling one or more NANO-elements; and bonding the NANO-elements to the NANO-bonding areas. | 05-07-2009 |
| 20090154223 | METHOD AND DEVICE FOR DEMULTIPLEXING A CROSSBAR NON-VOLATILE MEMORY - A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality of cross-points, hosting plural memory cells. A first electrode and a second electrode respectively cross a modulated doping portion of the row nano-wires and a modulated doping portion of the column nano-wires. A first contact and a second contact respectively the row nano-wires and the column nano-wires. The first electrode and the second electrode are biased respectively with a first and a second adjustable voltage value that progressively switch one by one said memory cells from the OFF state to the ON state, and this state can be memorized. | 06-18-2009 |
| 20090196090 | Nanoscale Shift Register And Signal Demultiplexing Using Microscale/Nanoscale Shift Registers - Methods for inputting a data-value pattern into a nanowire crossbar, for inputting a data-value pattern into a nanowire crossbar that support computer instructions stored in a computer-readable medium, and for distributing a received data value to each of a set of nanowires that support control logic implemented in logic circuits are provided. First and second nanoscale shift registers are employed, the first having output signal lines that form or interconnect with a first parallel set of nanowire-crossbar nanowires and the second having output signal lines that form or interconnect with a second parallel set of nanowire-crossbar nanowires. A first pattern of values is stored in the first shift register and a second pattern of values is stored in the second shift register using voltage signals below the WRITE voltage for junctions of the crossbar. Voltage signals greater than or equal to the WRITE threshold are applied for junctions of the crossbar to write the pattern of data values into the crossbar. | 08-06-2009 |
| 20090231906 | Memory using variable tunnel barrier widths - A memory using a tunnel barrier that has a variable effective width is disclosed. A memory element includes a tunneling barrier and a conductive material. The conductive material typically has mobile ions that either move towards or away from the tunneling barrier in response to a voltage across the memory element. A low conductivity region is either formed or destroyed. It can be formed by either the depletion or excess ions around the tunneling barrier, or by the mobile ions combining with complementary ions. It may be destroyed by either reversing the forming process or by reducing the tunneling barrier and injecting ions into the conductive material. The low conductivity region increases the effective width of the tunnel barrier, making electrons tunnel a greater distance, which reduces the memory element's conductivity. By varying conductivity multiple states can be created in the memory cell. | 09-17-2009 |
| 20090268511 | Bacteriorhodopsin Protein Variants and Methods of Use for Long Term Data Storage - Bacteriorhodopsin protein variants and methods using the bacteriorhodopsin variants for performance in holographic and three-dimensional (3D) memory storage devices are described. The amino acid and chemical modifications of bacteriorhodopsin provided herein achieve greatly enhanced protein performance. The memory storage devices write, read and erase data proficiently. The bacteriorhodopsin protein variants are useful in optical memory storage and associative processor systems. Irradiation of the light-sensitive protein with light of known wavelength causes the protein to switch between different states. The variants enter the branched photocycle via a single or a two photon process and form the permanent ‘Q’ state more efficiently than the wild-type bacteriorhodopsin protein. This branching photocycle of the variants is exploited in the fabrication of 3D memory storage devices. | 10-29-2009 |
| 20100073995 | NANO -ELECTRONIC ARRAY - A nano device includes an array of cells disposed in rows and columns and constructed over a substrate, and an optical circuit disposed over the substrate, wherein the optical circuit is formed by nano elements in a self-assembled process. | 03-25-2010 |
| 20100085801 | Methods of Forming Thin Films for Molecular Based Devices - The invention generally encompasses methods of forming thin films molecular based devices, and devices formed therefrom. Some embodiments relate to molecular memory cells, molecular memory arrays, electronic devices including molecular memory, and processing systems and methods for producing molecular memories. More particularly, the present invention encompasses methods and molecular based devices comprising a wetting layer and redox-active molecules. | 04-08-2010 |
| 20100118598 | Phosphonium Ionic Liquids, Compositions, Methods of Making and Electronic Devices Formed There From - The invention generally encompasses phosphonium ionic liquids and compositions and their use in many applications, including but not limited to: as electrolytes in electronic devices such as memory devices including static, permanent and dynamic random access memory, as battery electrolytes, as a heat transfer medium, fuel cells and electrochromatic devices, among other applications. In particular, the invention generally relates to phosphonium ionic liquids, compositions and molecules possessing structural features, wherein the molecules exhibit superior combination of thermodynamic stability, low volatility, wide liquidus range and ionic conductivity. The invention further encompasses methods of making such phosphonium ionic liquids, compositions and molecules, and operational devices and systems comprising the same. | 05-13-2010 |
| 20100328989 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF AND METHOD FOR WRITING MEMORY ELEMENT - An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device of the invention has a memory element including an insulating layer and an organic compound layer between first and second conductive layers. When melting, an organic compound of the organic compound layer aggregates due to surface tension of the organic compound. By applying a voltage to the first and second conductive layers, writing to the memory element is carried out. | 12-30-2010 |
| 20110286263 | MEMORY DEVICE - Memory device, comprising a storage material, a first electrode connected to the storage material; and a second electrode associated to the storage material. | 11-24-2011 |
| 20130148413 | SOLID, MULTI-STATE MOLECULAR RANDOM ACCESS MEMORY - A solid-state, multi-valued, molecular random access memory (RAM) device, comprising an electrically, optically and/or magnetically addressable unit, a memory reader, and a memory writer. The addressable unit comprises a conductive substrate; one or more layers of electrochromic, magnetic, redox-active, and/or photochromic materials deposited on the conductive substrate; and a conductive top layer deposited on top the one or more layers. The memory writer applies a plurality of predetermined values of potential biases or optical signals or magnetic fields to the unit, wherein each predetermined value applied results in a uniquely distinguishable optical, magnetic and/or electrical state of the unit, thus corresponding to a unique logical value. The memory reader reads the optical, magnetic and/or electrical state of the unit. | 06-13-2013 |
| 20140029332 | USE OF HYDROCARBON NANORINGS FOR DATA STORAGE - Hydro-carbon nanorings may be used in storage. Sufficiently cooled, an externally hydrogen doped carbon nanoring may be used to create a radial dipole field to contain streams of electrons. Similarly, an internally hydrogen doped carbon nanoring may be used to create a radial dipole field to contain streams of positrons. When matched streams of positrons and electrons are sufficiently compressed they may form Cooper pairs with magnetic moments aligned to the movement of the stream. Matched adjacent Cooper pairs of electrons and positrons may contain information within their magnetic moments, and as such, may transmit and store information with little or no energy loss. | 01-30-2014 |
| 20140269015 | USE OF HYDROCARBON NANORINGS FOR DATA STORAGE - Hydro-carbon nanorings may be used in storage. Sufficiently cooled, an externally hydrogen doped carbon nanoring may be used to create a radial dipole field to contain streams of electrons. Similarly, an internally hydrogen doped carbon nanoring may be used to create a radial dipole field to contain streams of positrons. When matched streams of positrons and electrons are sufficiently compressed they may form Cooper pairs with magnetic moments aligned to the movement of the stream. Matched adjacent Cooper pairs of electrons and positrons may contain information within their magnetic moments, and as such, may transmit and store information with little or no energy loss. Information may be similarly encoded in magnetic moments of spins of pairs of positrons and electrons, not in the form of Cooper pairs. | 09-18-2014 |
| 365152000 | Nuclear induction or spin echo | 1 |
| 20150009746 | Solid-State Quantum Memory Based on a Nuclear Spin Coupled to an Electronic Spin - A system comprising a solid state lattice containing an electronic spin coupled to a nuclear spin; an optical excitation configuration which is arranged to generate first optical radiation to excite the electronic spin to emit output optical radiation without decoupling the electronic and nuclear spins; wherein the optical excitation configuration is further arranged to generate second optical radiation of higher power than the first optical radiation to decouple the electronic spin from the nuclear spin thereby increasing coherence time of the nuclear spin; a first pulse source configured to generate radio frequency (RF) excitation pulse sequences to manipulate the nuclear spin and to dynamically decouple the nuclear spin from one or more spin impurities in the solid state lattice so as to further increase the coherence time of the nuclear spin; a second pulse source configured to generate microwave excitation pulse sequences to manipulate the electronic spin causing a change in intensity of the output optical radiation correlated with the electronic spin and with the nuclear spin via the coupling between the electronic spin and the nuclear spin; and a detector configured to detect the output optical radiation correlated with the electronic spin and the nuclear spin so as to detect a nuclear spin state of the nuclear spin. | 01-08-2015 |
