| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 361312000 | Plural dielectrics | 46 |
| 20080259524 | PROCESS FOR MANUFACTURING A HIGH-STABILITY CAPACITOR AND CORRESPONDING CAPACITOR - A dielectric alloy is composed of two dielectric materials that respectively have second-order non-linear dielectric susceptibilities with opposite signs. The composition is adjusted so that the alloy has a second-order non-linear dielectric susceptibility below a chosen threshold. A dielectric layer within an integrated circuit is made using the alloy. More specifically, an integrated capacitor is produced with a single-layer dielectric formed by said alloy. | 10-23-2008 |
| 20090195963 | CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A capacitor includes a pair of electrically conductive layers; a plurality of substantially or nearly tubular dielectric materials disposed between the pair of electrically conductive layers formed of anodic oxide of metal; first electrodes which are filled in hollow portions of the dielectric materials and connected to one of the electrically conductive layers; and a second electrode that is filled in voids between the respective dielectric materials and connected to the other electrically conductive layer. | 08-06-2009 |
| 20100097740 | DIELECTRIC CERAMIC AND CAPACITOR - A dielectric ceramic comprising a barium titanate as a main component and a capacitor comprising the dielectric ceramic are disclosed. The dielectric ceramic has a high dielectric constant that is stable over temperature, and has a small spontaneous polarization. The capacitor can reduce audible noise caused by an electrically induced strain in a power supply circuit. | 04-22-2010 |
| 20110128669 | THIN-FILM CAPACITOR - A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. | 06-02-2011 |
| 20110170232 | ELECTRICAL ENERGY STORAGE UNIT AND METHODS FOR FORMING SAME - An electrical storage unit includes a plurality of sets of layers. Each set of layers includes a first layer, a second layer, a third layer, and a fourth layer. The first layer includes a first electrode and plastic surrounding the first electrode on three sides of the first electrode within the first layer. The second layer includes a first active dielectric and plastic surrounding the first active dielectric on all four sides of the first active dielectric within the second layer. The third layer includes a second electrode and plastic surrounding the second electrode on three sides of the second electrode within the third layer. The fourth layer includes a second active dielectric and plastic surrounding the second active dielectric on all four sides of the second active dielectric within the fourth layer. | 07-14-2011 |
| 20110205685 | COMPOSITE DIELECTRIC MATERIAL FOR HIGH-ENERGY-DENSITY CAPACITORS - A composite dielectric material having a plurality of particle cores, each surrounded by polymer strands that are chemically bonded to the surface of the particle core. Each polymer strand includes a linker, through which the polymer strand is attached to the surface, an interfacial core-shielding (ICS) group bound to the linker, and a polymer molecule bound to the ICS group. The ICS groups are designed to inhibit electrical breakdown of the composite dielectric material by (i) deflecting or scattering free electrons away from the particle cores and/or (ii) capturing free electrons by being transformed into relatively stable radical anions. Representative examples of the particle core material, linker, ICS group, and polymer molecule are titanium dioxide, a phosphonate group, a halogenated aromatic ring, and a polystyrene molecule, respectively. | 08-25-2011 |
| 361313000 | Layered | 37 |
| 20080239626 | ELECTRONIC COMPONENT - This electronic component comprises a substrate; and a capacitor part provided on the substrate, the capacitor part includes a first electrode part provided on the substrate; a dielectric film covering the first electrode part; an insulating film that contacts the dielectric film and has an opening part; and a second electrode part that contacts an inner wall surface of the opening part of the insulating film and a surface of the dielectric film, and when the angle between a first interface between the dielectric film and the insulating film, and a second interface between the insulating film and the second electrode part is θ, θ is not more than 22°. | 10-02-2008 |
| 20080266750 | Capacitor Devices - A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer. | 10-30-2008 |
| 20080278887 | Systems and Methods for a Thin Film Capacitor Having a Composite High-K Thin Film Stack - Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor. | 11-13-2008 |
| 20080291603 | Trench Capacitor Device Suitable for Decoupling Applications in High-Frequency Operation - The present invention relates to a capacitor device ( | 11-27-2008 |
| 20090040687 | Capacitors adapted for acoustic resonance cancellation - An embodiment of the present invention provides a method, comprising reducing the losses due to electro-mechanical coupling and improving Q in a multilayered capacitor by placing a first capacitor layer adjacent at least one additional capacitor layer and sharing a common electrode in between the two such that the acoustic vibration of the first layer is coupled to an anti-phase acoustic vibration of the at least one additional layer. | 02-12-2009 |
| 20090122461 | CAPACITOR FOR A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof. | 05-14-2009 |
| 20090244809 | Thin-film device and method of manufacturing same - A thin-film device includes a substrate, and a capacitor provided on the substrate. The capacitor incorporates a lower conductor layer having a top surface and a side surface; a flattening film disposed to cover the top and side surfaces of the lower conductor layer; a dielectric film disposed on the flattening film; and an upper conductor layer disposed on the dielectric film. The lower conductor layer is composed of an electrode film and a plating film disposed on the electrode film. The dielectric film has a thickness that falls within a range of 0.02 to 1 μm inclusive and that is smaller than a thickness of the lower conductor layer. A surface roughness in maximum height of a top surface of the flattening film is smaller than that of the top surface of the lower conductor layer and equal to or smaller than the thickness of the dielectric film. | 10-01-2009 |
| 20090296314 | CAPACITOR OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Embodiments relate to a capacitor in a semiconductor device having high capacitance and a manufacturing method thereof. The capacitor includes a bottom electrode over a substrate, a dielectric layer stacked over the bottom electrode and including a first dielectric layer having a thickness of about 30 ű2 Å, a second dielectric layer having a thickness of about 100 ű5 Å, and a third dielectric layer having a thickness of about 30 ű2 Å, and a top electrode over the dielectric layer. Since dielectric layers having great band gaps are deposited over and under the top and bottom of the dielectric layer having a small band gap, the electric stability and leakage current characteristic are improved. The capacitor may have a high capacitance of 8 fF or above, and may be used for semiconductor devices, for example in development of high technology DRAM and CMOS devices. | 12-03-2009 |
| 20100002358 | HIGH-STABILITY THIN-FILM CAPACITOR AND METHOD FOR MAKING THE SAME - The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses d | 01-07-2010 |
| 20100014211 | STORAGE BATTERY - A storage battery of the present invention is a capacitor-type storage battery having a short charging time and a long life, and capable of realizing a high output voltage. The storage battery includes a metal sheet | 01-21-2010 |
| 20100014212 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide ZrO | 01-21-2010 |
| 20100091428 | INSULATOR, CAPACITOR WITH THE SAME AND FABRICATION METHOD THEREOF, AND METHOD FOR FABRICATING SEMIONDUCTOR DEVICE - Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al | 04-15-2010 |
| 20100118468 | Thin Film Capacitor and Manufacturing Method Therefor - A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion. | 05-13-2010 |
| 20100123996 | STRUCTURAL BODY, CAPACITOR, AND METHOD OF FABRICATING THE CAPACITOR - A structural body which includes a first dielectric layer formed on a first substrate and including first conductive particles, each surface of the first conductive particles being entirely covered with a first dielectric film; and a second dielectric layer formed on the first dielectric layer wherein a volume ratio of a dielectric in the second dielectric layer is higher than a volume ratio of a dielectric in the first dielectric layer. | 05-20-2010 |
| 20100128414 | Dielectric Ceramics and Multilayer Ceramic Capacitor - To provide a dielectric ceramics achieving a high insulation resistance even at a low applied voltage, and minimizing insulation resistance drop when the voltage is increased, and also provide a multilayer ceramic capacitor including the dielectric ceramics as a dielectric layer, and having excellent life characteristics in a high temperature load test. The dielectric ceramics has crystal grains composed mainly of barium titanate and containing vanadium, and a grain boundary phase existing between the crystal grains. The dielectric ceramics contains 0.0005 to 0.03 moles of vanadium in terms of V | 05-27-2010 |
| 20100165542 | BOROSILICATE GLASS COMPOSITIONS FOR SINTERING AGENT, DIELECTRIC COMPOSITIONS AND MULTILAYER CERAMIC CAPACITOR USING THE SAME - The present invention relates to borosilicate glass compositions for a sintering agent, dielectric compositions containing the borosilicate glass compositions and a multilayer ceramic capacitor using the dielectric compositions. Borosilicate glass compositions for a sintering agent according to an aspect of the invention include an alkali oxide, an alkaline earth oxide and a rare earth oxide, can sinter ceramic dielectrics at low temperatures and improve the hot insulation resistance of a multilayer ceramic capacitor. Correspondingly, dielectric compositions including these borosilicate glass compositions and a multilayer ceramic capacitor using the dielectric compositions can be sintered at a low temperature of 1100° C. or less and have high hot insulation resistance, thereby ensuring high levels of reliability. | 07-01-2010 |
| 20100172065 | CAPACITOR STRUCTURE - A capacitor structure includes: a top electrode, a bottom electrode, a first capacitor dielectric layer positioned between the top electrode and the bottom electrode and a second capacitor dielectric layer positioned between the top electrode and the bottom electrode. The first capacitor dielectric layer is selected from the group consisting HfO | 07-08-2010 |
| 20100195261 | CAPACITORS USING PREFORMED DIELECTRIC - Devices for storing energy at a high density are described. The devices include an electrode preformed to present a high exposed area onto which a dielectric is formed. The dielectric material has a high dielectric constant (high relative permittivity) and a high breakdown voltage, allowing a high voltage difference between paired electrodes to effect a high stored energy density. | 08-05-2010 |
| 20100214719 | CAPACITOR AND METHOD OF MANUFACTURING THE SAME - The present invention provides a capacitor including: a bottom electrode; a first dielectric layer formed on the bottom electrode; a conductive polymer layer formed on the first dielectric layer; a second dielectric layer formed on the conductive polymer layer; and a top electrode formed on the second dielectric layer, and a method of manufacturing the same. | 08-26-2010 |
| 20100246091 | THIN FILM CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A thin film capacitor includes a metal foil, dielectric layers and internal electrode layers alternately disposed on the metal foil, and a top electrode layer on the topmost layer among the two or more dielectric layers. These layers have peripheries that define an outer profile flaring toward the metal foil as viewed from the stacking direction of the thin film capacitor, and at least one dielectric layer of two or more dielectric layers satisfies a relationship B>A>0 wherein A is a gap of the periphery of the internal electrode layer directly below the dielectric layer protruding from the periphery of the dielectric layer, and B is a gap of the periphery of the dielectric layer protruding from the periphery of the internal electrode layer or the top electrode layer directly above the dielectric layer. The thin film capacitor has a structure free from short-circuiting and reducing debris of broken dielectric material. | 09-30-2010 |
| 20100246092 | THIN-FILM DEVICE - A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T | 09-30-2010 |
| 20100302705 | Capacitors, And Methods Of Forming Capacitors - Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component. | 12-02-2010 |
| 20100309607 | CAPACITOR SUBSTRATE STRUCTURE - The disclosed is a capacitor substrate structure to reduce the high leakage current and low insulation resistance issue of organic/inorganic hybrid materials with ultra-high dielectric constant. The insulation layer, disposed between two conductive layers, includes multi-layered dielectric layers. At least one of the dielectric layers has high dielectric constant, including high dielectric constant ceramic powder and conductive powder evenly dispersed in organic resin. The other dielectric layers can be organic resin, or further include high dielectric constant ceramic powder dispersed in the organic resin. The substrate has an insulation resistance of about 50 KΩ and leakage current of below 100 μAmp under operational voltage. | 12-09-2010 |
| 20100315760 | Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials - Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10 | 12-16-2010 |
| 20100321862 | Capacitor devices - A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer. | 12-23-2010 |
| 20110013341 | MULTILAYER CHIP CAPACITOR - Disclosed is a multilayer chip capacitor including a capacitor body including a plurality of dielectric layers that are stacked, first and second outer electrodes of opposite polarity disposed on an outer face of the capacitor body, first and second inner electrodes opposing each other inside the capacitor body to interpose the dielectric layer therebetween, the first inner electrode comprising an electrode plate forming capacitance and a lead extending from the electrode plate and connected to the first outer electrode, and the second inner electrode comprising an electrode plate forming capacitance and a lead extending from the electrode plate and connected to the second outer electrode. The leads are bent at least once and each have an overlap portion overlapping a lead of an adjacent inner electrode of opposite or like polarity when viewed along a stacked direction in which the plurality of dielectric layers are stacked. | 01-20-2011 |
| 20110032659 | COMPLIMENTARY METAL-INSULATOR-METAL (MIM) CAPACITORS AND METHOD OF MANUFACTURE - A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness. | 02-10-2011 |
| 20110032660 | COMPLIMENTARY METAL-INSULATOR-METAL (MIM) CAPACITORS AND METHOD OF MANUFACTURE - A low capacitance density, high voltage MIM capacitor and the high density MIM capacitor and a method of manufacture are provided. The method includes depositing a plurality of plates and a plurality of dielectric layers interleaved with one another. The method further includes etching a portion of an uppermost plate of the plurality of plates while protecting other portions of the uppermost plate. The protected other portions of the uppermost plate forms a top plate of a first metal-insulator-metal (MIM) capacitor and the etching exposes a top plate of a second MIM capacitor. | 02-10-2011 |
| 20110075321 | LAMINATED CERAMIC CAPACITOR - Disclosed is a laminated ceramic capacitor that comprises a capacitor body ( | 03-31-2011 |
| 20110090618 | METALIZED FILM CAPACITOR - A metalized film capacitor includes a first dielectric film, a first metal thin-film electrode provided on a surface of the first dielectric film, a second dielectric film provided on the first metal thin-film electrode, and a second metal thin-film electrode provided on the second dielectric film, such that the second metal thin-film electrode faces the first metal thin-film electrode across the second dielectric film. The surface of the first dielectric film has a surface energy ranging from 25 mN/m to 40 mN/m. The metalized film capacitor exhibits high heat resistance and a preferable self-healing effect. | 04-21-2011 |
| 20110279946 | CONNECTOR USING LIQUID DIELECTRIC FOR IMPROVED PERFORMANCE - A connector assembly utilizes improved capacitive coupling for connecting together electrical circuits on two substrates ( | 11-17-2011 |
| 20120092807 | Metal-Insulator-Metal Capacitor and Method for Manufacturing Thereof - The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO | 04-19-2012 |
| 20120170170 | METHOD FOR MANUFACTURING A POLYCRYSTALLINE DIELECTRIC LAYER - A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer. | 07-05-2012 |
| 20120320494 | Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials - Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10 | 12-20-2012 |
| 20130063863 | Insulator Based Upon One or More Dielectric Structures - A method and apparatus for a capacitor comprises a first plate and a second plate. An insulator between the first plate and the second plate includes a first dielectric layer and a second dielectric layer. At least one interface between the first dielectric layer and the second dielectric layer includes one or more additives. | 03-14-2013 |
| 20130250479 | Micro- and Nanoscale Capacitors that Incorporate an Array of Conductive Elements Having Elongated Bodies - Systems and methods in accordance with embodiments of the invention implement micro- and nanoscale capacitors that incorporate a conductive element that conforms to the shape of an array elongated bodies. In one embodiment, a capacitor that incorporates a conductive element that conforms to the shape of an array of elongated bodies includes: a first conductive element that conforms to the shape of an array of elongated bodies; a second conductive element that conforms to the shape of an array of elongated bodies; and a dielectric material disposed in between the first conductive element and the second conductive element, and thereby physically separates them. | 09-26-2013 |
| 20140071588 | CAPACITOR STRUCTURE OF CAPACITIVE TOUCH PANEL - A capacitor structure of capacitive touch panel including a first electrode layer, a first material layer, a second material layer and a second electrode layer is provided. The first material layer is disposed on the first electrode layer, and the material of the first material layer is selected from one of a semiconductor material and an insulating material. The second material layer is disposed on the first material layer, and the material of the second material layer is selected from another one of the semiconductor material and the insulating material. The second electrode layer is disposed on the second material layer. | 03-13-2014 |
| 361314000 | Impregnated | 1 |
| 20100246093 | TWO-PHASE MIXED MEDIA DIELECTRIC WITH MACRO DIELECTRIC BEADS FOR ENHANCING RESISTIVITY AND BREAKDOWN STRENGTH - A two-phase mixed media insulator having a dielectric fluid filling the interstices between macro-sized dielectric beads packed into a confined volume, so that the packed dielectric beads inhibit electro-hydrodynamically driven current flows of the dielectric liquid and thereby increase the resistivity and breakdown strength of the two-phase insulator over the dielectric liquid alone. In addition, an electrical apparatus incorporates the two-phase mixed media insulator to insulate between electrical components of different electrical potentials. And a method of electrically insulating between electrical components of different electrical potentials fills a confined volume between the electrical components with the two-phase dielectric composite, so that the macro dielectric beads are packed in the confined volume and interstices formed between the macro dielectric beads are filled with the dielectric liquid. | 09-30-2010 |
| 361320000 | Ceramic and glass | 2 |
| 20090103236 | Paste composition, dielectric composition, capacitor, and method for production of paste composition - A paste composition containing (a) a resin, (b) high dielectric constant inorganic particles having a perovskite crystal structure, and (c) an organic solvent, wherein the average particle diameter of the high dielectric constant inorganic particles is 0.002 μm to 0.06 μm, and the amount of all organic solvents is 35 wt % to 85 wt % based on the total amount of the paste composition. Further, a dielectric composition containing (a) a resin and (b) high dielectric constant inorganic particles having a perovskite crystal structure, wherein the average particle diameter of the high dielectric constant inorganic particles (b) is 0.002 μm to 0.06 μm. | 04-23-2009 |
| 20100157508 | METHOD OF MANUFACTURING COMPLEX OXIDE NANO PARTICLES AND COMPLEX OXIDE NANO PARTICLES MANUFACTURED BY THE SAME - A method of manufacturing complex oxide nano particles includes preparing a mixed solution including at least one metal salt selected from the group consisting of aluminum salt, manganese salt and barium salt, impregnating an organic polymer having nano-sized pores with the mixed solution, and calcining the organic polymer impregnated with the mixed solution. Accordingly, complex oxides with particle sizes on the nanoscale can be prepared, and the kind and composition ratio of metal elements contained in the complex oxides can be facilitated. Also, a multilayer ceramic capacitor including the complex metal oxides manufactured by this method can ensure a super slim profile and high capacity. | 06-24-2010 |
