| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 361280000 | Responsive to external condition | 65 |
| 20080232023 | Capacitors adapted for acoustic resonance cancellation - An embodiment of the present invention provides a device, comprising a multilayered tunable dielectric capacitor, wherein said multilayers of tunable dielectric are adapted to be DC biased to reduce the dielectric constant; and wherein the DC bias is arranged so that the number of layers of tunable dielectric biased positively is equal to the number of layers of tunable dielectric biased negatively. | 09-25-2008 |
| 20100188796 | Method And Apparatus for Microcontact Printing of MEMS - The embodiments disclosed herein are directed to fabrication methods useful for creating MEMS via microcontact printing by using small organic molecule release layers. The disclose method enables transfer of a continuous metal film onto a discontinuous platform to form a variable capacitor array. The variable capacitor array can produce mechanical motion under the application of a voltage. The methods disclosed herein eliminate masking and other traditional MEMS fabrication methodology. The methods disclosed herein can be used to form a substantially transparent MEMS having a PDMS layer interposed between an electrode and a graphene diaphragm. | 07-29-2010 |
| 20120293907 | VARIABLE-AREA CAPACITOR STRUCTURE, COMB GRID CAPACITOR ACCELEROMETER AND COMB GRID CAPACITOR GYROSCOPE - The present invention relates to a variable-area capacitor for a micromechanical sensor, a micromechanical comb grid capacitor accelerometer and a micromechanical comb grid capacitor gyroscope. Among them, the variable-area capacitor structure comprises of a movable and a fixed electrodes in each capacitor unit; a front surface of aforesaid movable electrode is parallel to that of aforesaid fixed electrode; the front surface of aforesaid movable electrode is in a rectangular shape, and the front surface of the fixed electrode is in a triangular or sawteeth shape or the front surface of the movable electrode is in a triangular or sawteeth shape, and the front surface of the fixed electrode is in a rectangular form; the triangular front surface is only overlapped with one long side of aforesaid rectangular front surface. Micromechanical sensors with variable-area capacitor structures of the invention can adjust elasticity coefficient as compared with present technology. | 11-22-2012 |
| 20130135786 | VARIABLE CAPACITOR AND METHOD FOR DRIVING THE SAME - Disclosed herein is a variable capacitor and its driving method, the variable capacitor including, a movable first electrode; and a second electrode formed with an insulating film, fixed in place, and its insulating film contacting the first electrode that is moved. | 05-30-2013 |
| 20130208397 | CAPACITIVE TRANSDUCER AND A METHOD FOR MANUFACTURING A TRANSDUCER - A capacitive transducer ( | 08-15-2013 |
| 20140104746 | IN-MOLDED CAPACITIVE SWITCH - An article of manufacture having an in-molded capacitive switch and method of making the same are shown and described. In one disclosed method, a conductive ink sensing zone is printed on a film. The film is formed to a desired shape and put in an injection mold. A molten plastic material is introduced into the injection mold to form a rigid structure that retains the film. | 04-17-2014 |
| 20140240893 | Electrostrictive Resonance Suppression for Tunable Capacitors - A multi-layered capacitor includes three or more capacitor layers. A first layer includes a first DC-biased, tunable capacitor. A second layer, acoustically coupled to the first layer, includes a second DC-biased, tunable capacitor. A third layer, acoustically coupled to the second layer, includes a third DC-biased, tunable capacitor. Each dielectric of the first, second, and third capacitors has a resonance of about the same frequency, within 5%, and inner electrodes of the first, second, and third capacitors have a resonance of about the same frequency, within 5%. The resonance of each layer is a function of at least thickness, density, and material. The first, second, and third layers are biased to generate destructive acoustic interference, and the multi-layer capacitor is operable at frequencies greater than 0.1 GHz. | 08-28-2014 |
| 20140376149 | PHASE CHANGE MATERIAL VARIABLE CAPACITOR - A method of manufacturing a variable capacitor includes forming a capacitor conductor. The method also includes forming a phase change material adjacent the capacitor conductor. The method further includes forming a first contact on the capacitor conductor. The method additionally includes forming a second contact and a third contact on the phase change material. | 12-25-2014 |
| 361281000 | Electrical | 45 |
| 20080253056 | Adjustable Capacitor and Circuit Provided Therewith - A capacitor with a multilayer structure on a ceramic or crystalline substrate is proposed that comprises at least one lower and one upper electrode as well as a tunable dielectric arranged therebetween in which resonant oscillation modes of bulk acoustic waves can be propagated, wherein, by suitable selection regarding material and thickness and a suitable number of layers in the multilayer structure, the latter is tuned such that the resonant frequencies of the oscillation modes lie outside of band ranges used in mobile telephones. Circuits with tunable capacitors that find multiple uses inside terminal devices for mobile communication are additionally proposed. | 10-16-2008 |
| 20080253057 | Mems Tunable Device - A micro-electromechanical device has a substrate ( | 10-16-2008 |
| 20090002914 | Variable capacitor tuned using laser micromachining - A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit. | 01-01-2009 |
| 20090059464 | Acoustic bandgap structures adapted to suppress parasitic resonances in tunable ferroelectric capacitors and method of operation and fabrication therefore - An embodiment of the present invention is an apparatus, comprising a stack of at least three ferroelectric layers with a top side and bottom side of each of the ferroelectric layers contacting an electrode layer, wherein the ferroelectric layers and the electrode layers form a substantially periodic structure in the direction normal to said ferroelectric and electrode layers and wherein an acoustic characteristic impedance and thickness of each layer are selected to realize an acoustic bandgap over a desired frequency band for the purpose of improving device Q. | 03-05-2009 |
| 20090067115 | Micro electromechanical capacitive switch - A capacitive switch for microelectromechanical systems (MEMS) comprises a topmost metal plate which extends across a bridge structure formed by a polymer layer. The polymer layer comprises poly-monochoro-para-xylene (parylene-C). The space below the polymer layer contains the second plate on a substrate. Using parylene as the primary bridge material makes the bridge of the MEMS device very flexible and requires a relatively low actuation voltage to pull the bridge down and lower power is required to control the MEMS device. | 03-12-2009 |
| 20090091874 | Variable capacitance capacitor, method for producing the capacitor, and use of same - A capacitor ( | 04-09-2009 |
| 20090147437 | COULOMB ISLAND AND FARADAY SHIELD USED TO CREATE ADJUSTABLE COULOMB FORCES - A first insulated planar metallic surface is formed under a surface of a substrate which is orientated a first way to an edge of the substrate. A Faraday shield is formed when a second insulated planar metallic surface is juxtaposed to and segregates the first insulated planar metallic surface from the remained of the substrate. The first way can be parallel or perpendicular forming either an edge or surface Coulomb island, respectively. Both planar surfaces can be charged either by mechanical contact or induced charging, Fowler-Nordheim and ion implantation. A Coulomb force is generated between two charged Coulomb islands each located on a different substrate. In addition, these Coulomb islands can also be used as capacitors to transfer signals between the substrates. The Faraday shield can be used to increase the Coulomb force while the potential applied to the shield can alter the Coulomb force. | 06-11-2009 |
| 20090195958 | METHOD AND SYSTEM FOR VARACTOR LINEARIZATION - Aspects of a method and system for varactor linearization are provided. In this regard, a relationship between control voltage and capacitance of a variable capacitor may be controlled utilizing a plurality of bias voltages communicatively coupled to a corresponding plurality of bias terminals of said variable capacitor. The variable capacitor may comprise a plurality of two-terminal unit varactors and a first terminal of each unit varactor may be coupled to an RF terminal of the variable capacitor, a second terminal of one of the unit varactors may be coupled to the control voltage, and a second terminal of each of the remaining unit varactors may be coupled to one of the bias voltages. The bias voltages may be generated via a resistor ladder and/or via the resistive nature of a portion of semiconductor substrate. The bias voltages may linearize the relationship between the control voltage and the capacitance. | 08-06-2009 |
| 20090207549 | VARIABLE CAPACITOR, MATCHING CIRCUIT ELEMENT, AND MOBILE TERMINAL APPARATUS - There is proved a variable capacitor that includes a substrate, a signal line disposed on a surface of the substrate for feeding a signal, a ground electrode disposed on the surface, and a movable electrode opposed the signal line and the ground electrode, the movable electrode operable to move toward and away from the signal line and the ground electrode. The movable electrode can be displaced by an electrostatic attraction between the movable electrode and the signal line and between the movable electrode and the signal line. An amount of displacement of the movable electrode varies according to an amount of the voltage which generates the electrostatic attraction. | 08-20-2009 |
| 20090296307 | MEMS BASED RF COMPONENTS WITH VERTICAL MOTION AND PARALLEL-PLATE STRUCTURE AND MANUFACTURE THEREOF USING STANDARD CMOS TECHNOLOGIES - A process of manufacturing parallel-plate microstructures by integrating the microstructures in a chip using a CMOS process is provided. A MEMS variable capacitor, a tunable band-pass filter, tunable matching networks, and capacitive RF-MEME switches all having vertically movable components and are integrated into a chip. | 12-03-2009 |
| 20100067167 | PARALLEL-PLATE STRUCTURE FABRICATION METHOD AND PARALLEL-PLATE STRUCTURE ARRANGEMENT - A fabrication method for parallel-plate structures and a parallel-plate structure arrangement, wherein the structures have a middle layer, grown on a substrate and disposed between top and bottom electrode layers, wherein the middle layer and the top and bottom electrode layers are deposited on a bottom substrate, and wherein the middle layer is grown first and the top and bottom electrodes are essentially deposited afterwards. | 03-18-2010 |
| 20100149722 | SELECTABLE CAPACITANCE CIRCUIT - A voltage-controlled capacitor and methods for forming the same are described. A mechanical conductor membrane of the voltage-controlled capacitor is movable to and from a first position and a second position. An amount of capacitance can vary with the movement of the mechanical conductor membrane. A microelectromechanical systems (MEMS) voltage-controlled capacitor can be used in a variety of applications, such as, but not limited to, RF switches and RF attenuators. | 06-17-2010 |
| 20100182730 | FERROELECTRIC VARACTOR WITH IMPROVED TUNING RANGE - The present invention relates to a ferroelectric varactor ( | 07-22-2010 |
| 20100182731 | TUNABLE MEMS CAPACITOR - A MEMS tunable capacitor comprises first and second opposing capacitor electrodes ( | 07-22-2010 |
| 20100246088 | Variable capacitor and method of making the same - A capacitor manufacturing method provides variable capacitors whose capacitances remain stable under the influence of temperature change. Such a variable capacitor includes a fixed electrode, a movable electrode film facing the fixed electrode, and an anchor portion that provides partial connection between the fixed electrode and the movable electrode film. For making this variable capacitor, a first electrode is formed to serve as the fixed electrode. Then, an anchor portion is formed on the fixed electrode, and a sacrifice film is formed to cover the fixed electrode but partially expose the anchor portion. A second electrode is formed on the sacrifice film to serve as the movable electrode film, bonded to the anchor portion. Finally, the sacrifice film is removed. | 09-30-2010 |
| 20100321857 | VARIABLE CAPACITOR, CONTROL METHOD THEREOF, ELECTRONIC DEVICE AND COMMUNICATION MOBILE DEVICE - The present invention provides a variable capacitor and a control method thereof capable of responding to applications of electronic apparatus including various electronic devices and communication mobile devices. The electronic device and the communication mobile device including the variable capacitor are provided. | 12-23-2010 |
| 20100328840 | MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME - A MEMS device of an aspect of the present invention including a MEMS element includes a first lower electrode provided on a substrate, a first insulator which is provided on the upper surface of the first lower electrode, and has a first thickness, and a movable first upper electrode supported by an anchor in midair above the first lower electrode, and a capacitance element includes a second lower electrode provided on the substrate, a second insulator which is provided on the upper surface of the second lower electrode, and has a second thickness, and a second upper electrode provided on the second insulator, wherein the second thickness is less than the first thickness. | 12-30-2010 |
| 20110051310 | Memcapacitive Devices - A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode. | 03-03-2011 |
| 20110051311 | TUNABLE CAPACITIVE DEVICE WITH LINEARIZATION TECHNIQUE EMPLOYED THEREIN - One exemplary tunable capacitive device includes a first tunable capacitive element, a first coupling capacitive element, a first coupling resistive element, and a first specific capacitive element. The first tunable capacitive element has a first node coupled to a first input voltage, and a second node. The first coupling capacitive element has a first node coupled to the second node of the first tunable capacitive element, and a second node coupled to a first connection terminal of the tunable capacitive device. The first coupling resistive element has a first node coupled to the second node of the first tunable capacitive element, and a second node coupled to a second input voltage, where the first input voltage and the second input voltage include a control voltage and a reference voltage. The first specific capacitive element is coupled between the first node and the second node of the first tunable capacitive element. | 03-03-2011 |
| 20110051312 | MEMS DEVICES - A MEMS device comprises first and second opposing electrodes ( | 03-03-2011 |
| 20110063774 | MEMS DEVICE - According to one embodiment, a MEMS devise includes an electrode on a substrate, a movable structure which is supported in midair above the electrode by first and second anchor portions on the substrate, and moves toward the electrode, a first spring structure which connects the first anchor portion to the movable structure and uses a ductile material, and a second spring structure which connects the second anchor portion to the movable structure and uses a brittle material. | 03-17-2011 |
| 20110170226 | CAPACITORS ADAPTED FOR ACOUSTIC RESONANCE CANCELLATION - An embodiment of a tunable capacitor can include a plurality of capacitors connected in series where at least two capacitors of the plurality of capacitors share a common electrode where the at least two capacitors are in lateral proximity and a bias that is capable of being applied to the at least two capacitors whereby the at least two capacitors vibrate in opposite phase to each other when the bias and an RF signal is applied to the at least two capacitors. | 07-14-2011 |
| 20110188168 | HIGH ACCURACY MEMS-BASED VARACTORS - Systems including varactor devices are provided. A varactor device ( | 08-04-2011 |
| 20110205683 | CONSTRUCTION SYSTEM FOR A CAPACITIVE SENSOR - A construction system for a capacitive sensor comprises a source electrode ( | 08-25-2011 |
| 20110216469 | METHOD FOR FABRICATING MEMS DEVICE AND MEMS DEVICE - There is provided a method for fabricating a device, preferably for a micro electro electro mechanical system. The method includes forming a first electrode on a substrate, where the first electrode has a first sloped end at least at one end thereof; forming a sacrificial layer on the first electrode, where the sacrificial layer has a first sloped edge, the first sloped edge and the first sloped end are overlapped each other so that a thickness of the first sloped edge decreases as a thickness of the first sloped end increases; forming a first spacer on the first electrode, where the first spacer has contact with the first sloped edge; forming a beam electrode on the sacrificial layer and the first spacer; and removing the sacrificial layer after the forming the beam electrode. | 09-08-2011 |
| 20110222204 | MEMS DEVICE - A MEMS device includes a substrate, a fixed electrode that is provided on the substrate and allows a signal to pass therethrough, a movable electrode that is provided above the substrate in a manner to face the fixed electrode and allows a signal to pass therethrough, a driving line that is provided inside the substrate and used to apply a driving voltage to displace the movable electrode, and a resistance that is provided in a first via hole formed inside the substrate and used to cutoff a signal. The fixed electrode or the movable electrode is connected to the driving line through the first resistance. | 09-15-2011 |
| 20120019977 | LAMINATE TYPE SEMICONDUCTOR CERAMIC CAPACITOR WITH VARISTOR FUNCTION - A laminate type semiconductor ceramic capacitor with a varistor function is achieved which allows for an improvement in product yield while ensuring such insulation performance that can withstand practical use, and is suitable for mass production with a favorable ESD withstanding voltage. The semiconductor ceramic forming the semiconductor ceramic layers has a compounding molar ratio m between the Sr site and the Ti site of 0.990≦m<1.000, has a donor element such as La present as a solid solution in crystal grains, has an acceptor element such as Mn present in a grain boundary layer in the range of 0.5 mol or less (preferably 0.3 mol to 0.5 mol) with respect to 100 mol of the Ti element, and has the crystal grains with an average grain size of 1.5 μm or less. | 01-26-2012 |
| 20120206857 | VARIABLE CAPACITANCE DEVICE - A variable capacitance device that operates properly at a point along a signal line through which a high-voltage RF signal passes while reducing a necessary DC voltage includes a substrate, a beam, and lower drive electrodes. The beam is connected to the substrate through a support portion. Lower drive electrodes and the beam generate a capacitance when a DC voltage is applied, and an electrostatic force due to this capacitance deforms the beam. The lower drive electrodes face the beam and are coupled to each other through the beam. An RF signal propagates between the lower drive electrodes. | 08-16-2012 |
| 20120281336 | Semiconductor variable capacitor - A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a linear dependence of the capacitance value with respect to the voltage of its control terminal. | 11-08-2012 |
| 20130003253 | Varactor and Method for Producing a Varactor - A varactor includes a first PTC region, which comprises a ceramic material with a positive temperature coefficient with respect to the resistance. The varactor also includes a capacitor region that includes a first electrode, a second electrode, and a first dielectric layer arranged between the first electrode and the second electrode. The first PTC region and the capacitor region are connected thermally conductively to one another. The capacitance of the capacitor region can be changed by applying a bias to the first PTC region, the capacitor region or to the first PTC region and the capacitor region. | 01-03-2013 |
| 20130003254 | PEROVSKITE MATERIAL WITH ANION-CONTROLLED DIELECTRIC PROPERTIES, THIN FILM CAPACITOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N | 01-03-2013 |
| 20130063857 | MEMS VARIABLE CAPACITOR AND METHOD FOR DRIVING THE SAME - Disclosed herein is an MEMS variable capacitor and its driving method, the MEMS variable capacitor including, a first electrode, a second electrode floating over the first electrode upper part, a fixed electrode separated at the second electrode side surface, and a drifting electrode placed between the second electrode and the fixed electrode, connected to the second electrode, and physically contacting the fixed electrode by a voltage applied to the fixed electrode. | 03-14-2013 |
| 20130107416 | ALTERING CAPACITANCE OF MIM CAPACITOR HAVING REACTIVE LAYER THEREIN | 05-02-2013 |
| 20130170092 | VARIABLE CAPACITANCE DEVICE - A variable capacitance device includes a substrate, a beam portion, lower drive electrodes and upper drive electrodes. The beam portion is made of an insulating material and is connected to the substrate via an anchor portion. In the lower drive electrode and the upper drive electrode, electrostatic attraction generated by the application of a DC voltage continuously changes. In the lower drive electrodes and the upper drive electrode, electrostatic capacitance generated by the application of an RF signal between the electrodes on both sides continuously changes in accordance with the deformation of the beam portion due to the electrostatic attraction. The beam portion includes an inner circumferential portion including the upper drive electrode, an outer circumferential portion including the upper drive electrode, and ladder portions sandwiched by the inner circumferential portion and the outer circumferential portion. The beam portion has a cross-sectional area that is reduced by the ladder portions. | 07-04-2013 |
| 20130286534 | VARIABLE-CAPACITOR DEVICE AND DRIVING METHOD THEREOF - According to one embodiment, a variable-capacitor device includes a first MEMS variable-capacitor element, and a second MEMS variable-capacitor element including one end series-connected to one end of the first MEMS variable-capacitor element. In a down-state, a first capacitance value of the first MEMS variable-capacitor element differs from a second capacitance value of the second MEMS variable-capacitor element. | 10-31-2013 |
| 20140002948 | MEMS VARIABLE CAPACITOR | 01-02-2014 |
| 20140009862 | MEMS VARACTORS - Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge. | 01-09-2014 |
| 20140036406 | INTEGRATED CIRCUIT BASED VARACTOR - A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighbouring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips. | 02-06-2014 |
| 20140043718 | METHOD FOR ETCHING A BST LAYER - The disclosure concerns a method for etching a PVD deposited barium strontium titanate layer, wherein a non-ionic surfactant at a concentration between 0.1 and 1 percent is added to an acid etching solution. | 02-13-2014 |
| 20140139968 | VARIABLE CAPACITY COMPOSITE COMPONENT - A variable capacity composite component has structures connecting four variable capacitors, for example, to signal terminals in series with bias application terminals of opposite polarities facing each other, connecting a power supply terminal to the bias+ sides of the first and second variable capacitors via a first bias resistance, and also to the bias+ sides of the third and fourth variable capacitors via a second bias resistance, connecting a grounding terminal to the bias− side of the first variable capacitor via a third bias resistance, also to the bias− sides of the second and third variable capacitors via a fourth bias resistance, and also to the bias− sides of the fourth variable capacitor via a fifth bias resistance, and setting the value of the first, second, and fourth bias resistances to one-half the value of the third and fifth bias resistances. | 05-22-2014 |
| 20140185181 | TUNABLE CAPACITOR - A tunable capacitor includes a substrate, a movable member, a first capacitive plate, a second capacitive plate, a third capacitive plate and a set of electrode plates. The movable member is disposed on the substrate. The movable member is adapted for moving away or toward the substrate to have a first position and a second position, respectively. The first capacitive plate is disposed on the movable member and faces the substrate. The second capacitive plate and the third capacitive plate are disposed on the substrate and face the first capacitive plate. The set of electrode plates, disposed on the substrate, faces the at least one movable member. The set of electrode plates, driven by an electrical voltage, generates electrostatic force causing the movable member to be drawn from the first position to the second position thereof to correspondingly adjust capacitance between the capacitive plates. | 07-03-2014 |
| 20140240894 | FRACTAL STRUCTURES FOR MEMS VARIABLE CAPACITORS - In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended. | 08-28-2014 |
| 20140355172 | HIGH LINEARITY VARIABLE CAPACITOR ARRAY - A highly linear, variable capacitor array constructed from multiple cells. Each cell includes a pair of passive, capacitor components connected in anti-parallel. The capacitor components may be Metal Oxide Semiconductor (MOS) capacitors. A control circuit applies bias voltages to bias voltage terminals associated with each capacitor component, to thereby control the overall capacitance of the array. | 12-04-2014 |
| 20150310995 | Method and Apparatus for use in Digitally Tuning a Capacitor in an Integrated Circuit Device - A method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described. A Digitally Tuned Capacitor DTC is described which facilitates digitally controlling capacitance applied between a first and second terminal. In some embodiments, the first terminal comprises an RF+ terminal and the second terminal comprises an RF− terminal. In accordance with some embodiments, the DTCs comprise a plurality of sub-circuits ordered in significance from least significant bit (LSB) to most significant bit (MSB) sub-circuits, wherein the plurality of significant bit sub-circuits are coupled together in parallel, and wherein each sub-circuit has a first node coupled to the first RF terminal, and a second node coupled to the second RF terminal. The DTCs further include an input means for receiving a digital control word, wherein the digital control word comprises bits that are similarly ordered in significance from an LSB to an MSB. | 10-29-2015 |
| 20160072463 | MULTI-VARACTOR APPROACH FOR IMPROVED VCO GAIN - An apparatus with a multi-varactor circuit for suppressing VCO gain is described herein. According to an embodiment, the apparatus comprises a plurality of varactor stages that are electrically coupled in parallel. For two or more varactor stages of the plurality of varactor stages, each respective varactor stage of the two or more varactor stages includes a set of one or more varactors that are electrically coupled to a tuning source. Each respective varactor stage of the two or more varactor stages is configured to vary a respective capacitance based on a tuning voltage from the tuning source and to be biased at a different respective voltage level. In other embodiments, the set of one or more varactors for each varactor stage of the two or more varactor stages includes at least one digitally-controlled switched varactor. The digitally-controlled switched varactors may be selectively connected to the tuning source. | 03-10-2016 |
| 361282000 | Thermal | 2 |
| 20090080137 | MULTILAYER CERAMIC DEVICE AND MOUNTING STRUCTURE THEREFOR - An NTC capacitor comprises a capacitor body having a plurality of insulator layers laminated therein, first to third inner electrodes arranged within the capacitor body, and first to third terminal electrodes arranged on outer surfaces of the capacitor body. The first inner electrode is connected to only the first terminal electrode. The second inner electrode is connected to only the second terminal electrode. The third inner electrode is connected to only the third terminal electrode. The third inner electrode opposes none of the first and second inner electrodes in the laminating direction of the insulator layers. | 03-26-2009 |
| 20160071653 | PHASE CHANGE MATERIAL VARIABLE CAPACITOR - A method of manufacturing a variable capacitor includes forming a capacitor conductor. The method also includes forming a phase change material adjacent the capacitor conductor. The method further includes forming a first contact on the capacitor conductor. The method additionally includes forming a second contact and a third contact on the phase change material. | 03-10-2016 |
| 361283100 | Pressure | 6 |
| 20080218934 | Method of Manufacturing a Microsystem, Such a Microsystem, a Stack of Foils Comprising Such a Microsystem, an Electronic Device Comprising Such a Microsystem and Use of the Electronic Device - The invention relates to a method of manufacturing a microsystem and further to such microsystem. With the method a microsystem can be manufactured by stacking pre-processed foils ( | 09-11-2008 |
| 20090195959 | ELECTRONIC DEVICE AND METHOD FOR CONTROLLING SAME - A portable electronic device includes a housing, a display device exposed by the housing, an input device for receiving user-input, a plurality of sensors on the housing for detecting touches on the portable electronic device, and functional components housed in the housing. The functional components include a memory device and a processor operably connected to the sensors, the display device the input device, and the memory device. | 08-06-2009 |
| 20130100575 | ELECTRICAL COMPONENTS AND CIRCUITS INCLUDING SAID COMPONENTS - The invention provides an electric circuit device including a conductive element configured to provide an electrical input to an electrical component, the resistivity of the conductive element being variable based at least on the extent of deformation thereof, and a deformable body coupled directly or indirectly to, or integral with, the conductive element such that deformation of the body causes the conductive element to deform, thereby varying the resistance thereof and altering the input to the electrical component. Said devices may be used singularly or in combination as logic elements within electrical circuits, providing drive and/or control functionality. Particular embodiments provide improved electrostatic generators. | 04-25-2013 |
| 361283400 | By diaphragm | 3 |
| 20080253058 | Pressure and mechanical sensors using titanium-based superelastic alloy - Pressure and mechanical sensors include a sensing component formed of a titanium and tantalum alloy having an elastic (Young's) modulus of less than about 80 GPa and a tensile strength of greater than about 1,000 MPa. The high strength and low elastic modulus, together with very low temperature dependence of the elastic modulus and very low linear thermal expansion, result in high resolution and precise measurement over a large temperature range. | 10-16-2008 |
| 20130301183 | CAPACITIVE TOUCH DEVICE - A capacitive touch device includes a transparent handheld portion and a touch portion, and the transparent handheld portion has at least one sensing structure, and the touch portion is disposed at an end of the transparent handheld portion and has a flexible conductive element, and a user can hold the handheld portion. When the flexible conductive element is contacted with the capacitive touch panel, a capacitive coupling is formed to produce current, to achieve the touch operation effect. | 11-14-2013 |
| 20140071583 | Liquid MEMS Component Responsive to Pressure - A liquid micro-electro-mechanical system (MEMS) component includes a board, a channel frame, a flexible channel side, a liquid droplet, and one or more conductive elements. The channel frame is within the board and mates with the flexible channel side to form a channel within the board. The liquid droplet is contained within the channel. When a pressure is applied to the flexible side, the shape of the liquid droplet is changed with respect to the one or more conductive elements thereby changing an operational characteristic of the liquid MEMS component. | 03-13-2014 |
| 361284000 | Liquid level | 1 |
| 20140071584 | Liquid MEMS Capacitor - A liquid micro-electro-mechanical system (MEMS) capacitor includes a first capacitor plate, a second capacitor plate, a channel, a dielectric doped droplet, and a droplet activating module. The channel is implemented or embedded in one or more layers of a board and the dielectric doped droplet is contained in the channel. The droplet activating module operable to change the dielectric doped droplet with respect to the first and second capacitive plates, which are proximal to the channel and at a distance from each other, thereby changing a dielectric property of the liquid MEMS capacitor. | 03-13-2014 |
| 361286000 | Humidity | 3 |
| 20080316673 | Moisture Sensor - A moisture sensor includes interdigitated first and second electrodes formed in trenches | 12-25-2008 |
| 20100134948 | HUMIDITY SENSOR HAVING ANODIC ALUMINUM OXIDE LAYER, AND FABRICATING METHOD THEREOF - Disclosed are a humidity sensor and a fabricating method thereof. The humidity sensor includes a substrate, an anodic aluminum oxide layer formed on the substrate and having a plurality of holes, and electrodes formed on the anodic aluminum oxide layer, in order to improve sensitivity and accuracy of the humidity sensor. Further, the fabricating method of a humidity sensor includes preparing an aluminum substrate, forming an anodic aluminum oxide layer by oxidizing the aluminum substrate, and forming electrodes on the anodic aluminum oxide layer. | 06-03-2010 |
| 20130170093 | CAPACITANCE ELECTRODE STRUCTURE FOR MEASURING MOISTURE | 07-04-2013 |
