| Entries |
| Document | Title | Date |
|---|
| 20080309448 | STACKED PTC THERMISTOR AND PROCESS FOR ITS PRODUCTION - A stacked PTC thermistor | 12-18-2008 |
| 20090002122 | SYSTEM FOR SETTING SHUTDOWN VOLTAGE OF ELECTRONIC DEVICE - A system for setting a shutdown voltage for an electronic device having a power source with an internal resistor includes a temperature sensing module and a processing module. The temperature sensing module is configured for measuring a temperature of the power source, and the temperature sensing module includes a reference resistor with invariable resistance, and generates a reference voltage across the reference resistor based on the temperature of the power source. The processing module is configured for generating a voltage across the internal resistor of the power source based on the temperature of the power source, and setting the shutdown voltage of the electronic device according to the reference voltage and the voltage across the internal resistor. | 01-01-2009 |
| 20090027158 | Stacked electronic part and method of manufacturing the same - Provided are a stacked electronic part that can sufficiently suppress plating deposition on the surface of a porous green body when a terminal electrode is formed on an external electrode, thereby enabling a decrease in the reliability of products to be prevented, and a method of manufacturing the stacked electronic part. The stacked electronic part | 01-29-2009 |
| 20090085714 | THERMISTOR - A thermistor is provided that is capable of sufficiently protecting a thermistor element without increasing the thickness of the element and that prevents separation of the sealed section during installation and shipment. A thermistor | 04-02-2009 |
| 20090108984 | CERAMIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - Provided are a ceramic component and a method of manufacturing the ceramic component. The ceramic component includes a previously fired insulation ceramic base, a functional ceramic sheet bonded to the insulation ceramic base by a diffusion bonding layer having an anchoring structure, internal electrodes embedded into the functional ceramic sheet, and external electrodes connected to the internal electrodes. A functional ceramic paste corresponding to the functional ceramic sheet is applied to the insulation ceramic base and is dried to form a functional ceramic film. The functional ceramic film is pressed against the insulation ceramic base to anchor functional ceramic film into the insulation ceramic base for sure attachment. The functional ceramic film is fired to allow functional oxide materials included in the functional ceramic film to permeate the insulation ceramic base by solid diffusion to form the diffusion bonding layer and to change the functional ceramic film into the functional ceramic sheet. | 04-30-2009 |
| 20090121824 | Device having at least one PTC resistor - The present invention relates to a device having at least one PCT resistor and having at least one AC voltage source connected to the PTC resistor, with the PTC resistor being dimensioned such that the voltage drop over the PTC resistor does not exceed the value of 40 V/mm. | 05-14-2009 |
| 20090160601 | TEMPERATURE COMPENSATION ATTENUATOR - A temperature compensation attenuator comprising: a base; a first film thermistor having two edges, a second film thermistor having a first edge, a second edge; and a third edge; an input terminal; an output terminal and a ground terminal; wherein the first film thermistor and the second film thermistor are disposed on the base; one edge of the first film thermistor is contacted to the input terminal; the other edge of the first film thermistor is contacted to the output terminal; the first edge of the second film thermistor is contacted to the input terminal; the second edge of the second film thermistor is contacted to the output terminal, the third edge of the second film thermistor is contacted to the ground terminal; and the first film thermistor has a temperature characteristic opposite to that of the second film thermistor. | 06-25-2009 |
| 20090179732 | NTC THERMISTOR CERAMIC AND NTC THERMISTOR USING THE SAME - A NTC thermistor ceramic having higher voltage resistance and a NTC thermistor are provided. The NTC thermistor ceramic either contains manganese and nickel, the manganese/nickel content ratio being is 87/13 to 96/4, or the manganese/cobalt content ratio being is 60/40 or more and 90/10 or less. The NTC thermistor ceramic includes a first phase, which is a matrix, and a second phase composed of plate crystals dispersed in the first phase, the second phase has an electrical resistance higher than that of the first phase and a higher manganese content than the first phase, and the first phase has a spinel structure. A NTC thermistor includes a ceramic element body composed of the NTC thermistor ceramic having the above-described features, internal electrode layers formed inside the ceramic element body, and external electrode layers disposed on two side faces of the ceramic element body | 07-16-2009 |
| 20090206980 | THERMISTOR AND MANUFACTURING METHOD THEREOF - Provided is a thermistor that exhibits small changes in resistance before and after tripping. In a preferred embodiment, the thermistor comprises a pair of electrodes, and a thermistor layer disposed between the pair of electrodes. The thermistor layer is a cured layer of a thermistor composition that comprises a resin, conductive particles, and a cross-linking agent comprising an isocyanurate having allyl groups and glycidyl groups. | 08-20-2009 |
| 20090237199 | Electrical Assembly with PTC Resistor Elements - An electrical assembly includes at least two PTC-resistor elements, each of which has a base body having a flat shape. Each base body has main surfaces that contain electrodes. A carrier plate has spacers for positioning base bodies of the at least two PTC resistor elements. A width each spacer is about equal, in at least one area, to a distance between facing electrodes of adjacent PTC-resistor elements. | 09-24-2009 |
| 20090251276 | Electrical assembly with PTC resistor elements - An electrical assembly includes a housing and at least two PTC (Positive Temperature Coefficient) resistor elements in the housing. Each of the at least two PTC resistor elements includes a body having a flat construction and electrodes on main surfaces of the body. Each of the at least two PTC resistor elements includes an electrically insulating envelope. The housing is closed. | 10-08-2009 |
| 20090309691 | ELECTRONIC COMPONENT - An electronic component includes a layered structure, an isolated electrode, first and second external electrodes, and first and second internal electrodes. The layered structure includes laminated ceramic layers laminated. The first and second external electrodes are disposed on the surface of the layered structure. The isolated electrode extends in the x-axis direction inside the layered structure and is not connected to the first and second external electrodes. The first internal electrode faces a first end of the isolated electrode with a ceramic layer therebetween. The second internal electrode faces a second end of the isolated electrode with a ceramic layer therebetween. When viewed in plan from the z-axis direction, the width of the isolated electrode in the y-axis direction decreases in the direction from the first end to the second end of the isolated electrode. | 12-17-2009 |
| 20100052842 | THERMISTOR - A thermistor has a sealing portion of glass which seals at least a thermistor element body, first and second electrodes, and ends of the first and second lead wires and an insulating portion which covers portions of the first and second lead wires exposed from the sealing portion. The first and second lead wires are spaced from each other and include respective first portions extending from the aforementioned ends and spaced from each other with a first space, respective second portions spaced from each other with a second space larger than the first space, and respective third portions spaced from each other with a space varying from the first space to the second space, between the first and second portions. The insulating portion covers the first portions of the first and second lead wires together and covers the second and third portions of the first and second lead wires independently for each of the first and second lead wires. | 03-04-2010 |
| 20100066481 | PTC thermistor - A PTC thermistor includes two electric conducting plates connected with different electrodes and an intermediate insulating plate clamped between the two electric conducting plates. The intermediate insulating plate has its surface bored with openings at locations respectively corresponding with those of each PTC thermal resistance member for the PTC thermal resistance member to be engaged therein. The intermediate insulating plate can surely separate and insulate the two different-electrode electric conducting plates and stably fix the PTC thermal resistance members in position. | 03-18-2010 |
| 20100066482 | ELECTRONIC COMPONENT WITH LEAD WIRE - In an electronic component, first and second lead wires include coated portions and first and second metal wire exposed portions. The coated portions include metal wires that are coated with insulating members. Each of the first and second metal wire exposed portions have a flat shape. The first lead wire and the second lead wire are arranged parallel or substantially parallel to each other. The second lead wire is shorter than the first lead wire. The first metal wire exposed portion is soldered to the side surface folded portion of the terminal electrode. The second metal wire exposed portion is soldered to the side surface folded portion of the terminal electrode. The first and second metal wire exposed portions are located substantially in the same plane. A solder fillet is provided not only on the side surface folded portions, but also on end surface portions and in a gap. | 03-18-2010 |
| 20100079234 | Thermistor and electrical device employed with same - An electrical device includes a thermistor and at least two electrodes electrically connected to the thermistor and to which a source of electrical power is applied to cause current to flow through the thermistor. The thermistor may be a composite and includes a polymer material; and a plurality of conductive carbon nanotubes distributed in the polymer material. The electrical device employed with the thermistor performs not only PTC property, but also NTC property. Moreover, the method for fabricating the electrical device is also simple and easy to carry out because of the simple process. | 04-01-2010 |
| 20100117784 | RESISTANCE THERMOMETER - A resistance thermometer, composed of a plurality of components, at least comprising: at least one substrate, which is composed essentially of a material, whose thermal coefficient of expansion is essentially greater than 10.5 ppm/K; at least one resistive element, which is arranged on the substrate; and at least one electrically insulating, separating layer, which is arranged essentially between the resistive element and the substrate. The invention includes that the effective thermal coefficient of expansion TCE | 05-13-2010 |
| 20100123543 | SENSOR ELEMENT AND PROCESS FOR ASSEMBLING A SENSOR ELEMENT - A high-temperature sensor element includes at least one thermistor element having at least two contact areas and one contacting element including an isolating ceramic base body and at least two conductor lines. The contact areas of the thermistor element are connected to the conductor lines of the contacting element by an electro conductive bridge. A process for assembling a sensor element is also described in which an thermistor element is connected by a temperature resistant junction to a contacting element, and in which the thermistor element and part of the contacting element adjacent to the thermistor element are sealed by a encapsulation compound. | 05-20-2010 |
| 20100134237 | SEMI-CONDUCTIVE CERAMIC MATERIAL AND NTC THERMISTOR USING THE SAME - A NTC thermistor which has superior linearity of resistance-temperature characteristic is provided without depending on a combination of two or more kinds of material but with a single semi-conductive ceramic material. As the semi-conductive ceramic material of negative resistance-temperature characteristic is a ceramic body constituting a NTC thermistor being an oxide expressed by the formula AMn | 06-03-2010 |
| 20100176912 | MOUNTING STRUCTURE FOR A SENSOR - A mounting structure ( | 07-15-2010 |
| 20100182121 | OVER-CURRENT PROTECTION DEVICE AND MANUFACTURING METHOD THEREOF - An over-current protection device comprises a PTC material layer, a first electrode layer, a second electrode layer, a first side electrode and a second side electrode. The PTC material layer is sandwiched between the first electrode layer and the second electrode layer. The first side electrode and the second side electrode are respectively disposed on two opposite side surfaces of the PTC material layer, and are respectively connected to the first electrode layer and the second electrode layer. Furthermore, the first side electrode and the second side electrode are respectively extended to four surfaces adjacent and perpendicular to the two side surfaces. | 07-22-2010 |
| 20100194522 | RESETTABLE FUSE WITH TEMPERATURE COMPENSATION - A temperature compensated device to prevent overcurrent in electrical circuits in very cold conditions. The device includes a PTC thermistor to control current through a circuit. A negative temperature coefficient (NTC) thermistor is thermally coupled to a PTC thermistor to ‘warm’ the PTC thermistor in cold environments. When circuit current flows in the NTC thermistor, the NTC thermistor will heat up, thus warming the PTC thermistor. The PTC thermistor may then operate as designed and prevent overcurrent in an electrical circuit. | 08-05-2010 |
| 20100207718 | Electrical Protective Device - An electrical protective device is described which has two PTC thermistor components which are in the form of plates and are arranged in a common housing. The housing in each case has an opening on two opposite sides, which opening corresponds to the dimensions of the PTC thermistor components such that the PTC thermistor components can be inserted into the housing through the openings. The two PTC thermistor components are electrically isolated from one another in the housing. The PTC thermistor components each have at least two connecting wires, by means of which the PTC thermistor components are locked to the housing. | 08-19-2010 |
| 20100214054 | THERMISTOR DEVICE - The present invention relates to a laminate thermistor device comprising a lead terminal 12 connected to a terminal electrode 10. A device main body 4 is a rectangular parallelepiped having mutually perpendicular first side 4 | 08-26-2010 |
| 20100237981 | PTC DEVICE AND PROCESS FOR MANUFATURING THE SAME - There are provided a process for manufacturing a PTC device as well as a PTC device manufactured by such process wherein a resin coating for preventing the oxidation can be easily formed. The PTC device includes (A) a polymer PTC component ( | 09-23-2010 |
| 20100289613 | VANADIUM OXIDE THERMAL MICROPROBES - A temperature probe includes a substrate, a cantilever body portion formed on the substrate, having an anchor portion held in contact to the substrate and a free end portion extending out of the surface of the substrate, and a sputter-deposited thermistor sensor portion located at the free end portion of the cantilever body portion. | 11-18-2010 |
| 20100321147 | Vanadium sesquioxide nanocomposite - The vanadium sesquioxide nanocomposite is useful for applications in thermistors, current switching devices, static charge dissipation devices, and electromagnetic shielding. Vanadium sesquioxide nanoparticles are produced using a sol-gel process that results in a V | 12-23-2010 |
| 20110012707 | NTC THERMISTOR CERAMIC, METHOD FOR PRODUCING NTC THERMISTOR CERAMIC, AND NTC THERMISTOR - A ceramic main body | 01-20-2011 |
| 20110068890 | NTC THIN FILM THERMAL RESISTOR AND A METHOD OF PRODUCING IT - This invention relates to a method for thin film device. The method for manufacturing a thin film negative temperature coefficient thermistor is disclosed. It includes selecting a substrate, a temperature-sensitive layer, inner electrodes, a protective layer and end electrodes. The temperature-sensitive layer is an NTC thin film, the inner electrodes have a comb-shaped structure. The resistance value of the present invention can be regulated by changing material composition and the width, gap, length of comb-shaped electrodes, which are not influenced by the error of the thermistor physical size. In present invention, a high temperature glaze is engaged to smooth the surface of cheaper ceramic substrates. This process reduces the manufacturing cost, improves the structure, enhances the reliability and the yield and thus expands the application scope of the NTC thin film thermistor chips. The invention has an industrial practicability. | 03-24-2011 |
| 20110084794 | IMMERSION WELL ASSEMBLY - An immersion well assembly may include a thermistor housing defining a first axial passage and a thermistor wire collar axially secured to the thermistor housing and defining a second axial passage. The second axial passage may receive a thermistor wire and may axially fix the thermistor wire relative to the thermistor housing. | 04-14-2011 |
| 20110156859 | Over-current protection device - An over-current protection device comprises two metal foils and a positive temperature coefficient (PTC) material layer. The PTC material layer is sandwiched between the two metal foils and has a volume resistivity below 0.1 Ω-cm. The PTC material layer includes (i) plural crystalline polymers having at least one crystalline polymer of a melting point less than 115° C.; (ii) an electrically conductive nickel filler having a volume resistivity less than 500 μΩ-cm; and (iii) a non-conductive metal nitride filler. The electrically conductive nickel filler and non-conductive metal nitride filler are dispersed in the crystalline polymer. | 06-30-2011 |
| 20110169600 | Ceramic material, method for the manufacture of a ceramic material and electroceramic component comprising the ceramic material - Ceramic material of the general formula: [SE | 07-14-2011 |
| 20110169601 | THERMISTOR ELEMENT MANUFACTURING METHOD, AND THERMISTOR ELEMENT - Disclosed is a manufacturing method for a thermistor element having a metal oxide sintered body for thermistor use and multiple lead wires connected to said metal oxide sintered body for thermistor use. The method has a step wherein a thermistor raw material powder formed from a metal oxide, an organic binder powder, and a solvent are mixed and kneaded to form a clay, a step wherein the clay is extrusion-molded by means of a molding die ( | 07-14-2011 |
| 20110215894 | SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR - A semiconductor ceramic includes a Ba | 09-08-2011 |
| 20110241818 | Over-current protection device - An over-current protection device comprises two metal foils, a positive temperature coefficient (PTC) material layer and a packaging material layer. The PTC material layer is sandwiched between the two metal foils and has a volume resistivity below 0.1 Ω-cm. The PTC material layer includes (i) plural crystalline polymers having at least one crystalline polymer with a melting point less than 115° C.; (ii) an electrically conductive nickel filler having a volume resistivity less than 500 μΩ-cm; and (iii) a non-conductive metal nitride filler. The electrically conductive nickel filler and non-conductive metal nitride filler are dispersed in the crystalline polymer. The packaging material layer which encapsulates the chip is essentially comprised of the PTC layer and the two metal foils. The packaging material layer is formed by reacting epoxy resin with a hardener having amide functional group. | 10-06-2011 |
| 20110254652 | PTC-RESISTOR - A PTC-resistor includes a base body made of a ceramic material with a positive temperature coefficient of resistance. The base body extends along a median plane, and is confined by surfaces. At least one surface is configured to electrically connect the base body. An area of the at least one surface is larger than an area of a parallel projection of the base body in a direction perpendicular to the median plane. | 10-20-2011 |
| 20110273264 | LAMINATED SMD-TYPE THERMISTORS AND MANUFACTURING METHODS THEREOF - A laminated SMD-type thermistor has a conductive module, a left and a right conductive metal layer. The conductive module includes a core conductive module coated with an insulating layer on the upper and lower surface, and the left and right side. The core conductive module includes at least one conductive unit piled up in sequence, two conductive units are separated by an insulating material layer. The conductive unit includes an upper metal foil, a conductive polymer chip and a lower metal foil which are laminated in sequence from top to bottom. A left and right conductive metal layer are coated on the left and right part of the conductive module respectively, and penetrate the insulating layer partially, to connect with two metal foils of the conductive unit respectively. The laminated SMD-type thermistor can further comprise two plating resistant films coated on the upper and lower surface of the conductive module. | 11-10-2011 |
| 20110279220 | PTC Device - There is provided a PTC device having a sufficient function to detect the possibility of the substrate reaching an extraordinary high temperature more rapidly, and prevent the substrate from reaching such an extraordinary high temperature beforehand. The PCT device | 11-17-2011 |
| 20120013432 | THERMISTOR - A thermistor comprises a main body, two electric plugs, a metallic fixing piece, and a cover. The electric plugs are located on one end of the main body, and the metallic fixing piece is located on the side of the main body. The metallic fixing piece has a connecting portion up against one side of the main body, and a soldering portion located on the other end of the main body, opposite to the electric plugs and protruding from the main body. The cover is over the main body and the connecting portion of the metallic fixing piece, thereby securing the metallic fixing piece to the main body. The soldering portion of the metallic fixing piece can be soldered directly onto the printed circuit board, thereby anchoring the thermistor to the printed circuit board more securely. | 01-19-2012 |
| 20120044041 | CONDUCTIVE MATRIX POWER CONTROL SYSTEM WITH BIASING TO CAUSE TRIPPING OF THE SYSTEM - A three-terminal device ( | 02-23-2012 |
| 20120056709 | MULTILAYER PTC THERMISTOR - A multilayer PTC thermistor | 03-08-2012 |
| 20120081206 | SEMICONDUCTOR CERAMIC AND POSITIVE-COEFFICIENT CHARACTERISTIC THERMISTOR - A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula A | 04-05-2012 |
| 20120154105 | NTC THERMISTOR CERAMIC AND NTC THERMISTOR USING THE SAME - A NTC thermistor ceramic having higher voltage resistance and a NTC thermistor are provided. The NTC thermistor ceramic either contains manganese and nickel, the manganese/nickel content ratio being is 87/13 to 96/4, or the manganese/cobalt content ratio being is 60/40 or more and 90/10 or less. The NTC thermistor ceramic includes a first phase, which is a matrix, and a second phase composed of plate crystals dispersed in the first phase, the second phase has an electrical resistance higher than that of the first phase and a higher manganese content than the first phase, and the first phase has a spinel structure. A NTC thermistor includes a ceramic element body composed of the NTC thermistor ceramic having the above-described features, internal electrode layers formed inside the ceramic element body, and external electrode layers disposed on two side faces of the ceramic element body. | 06-21-2012 |
| 20120182118 | OVER-CURRENT PROTECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME - An over-current protection device includes a conductive composite having a first crystalline fluorinated polymer, a plurality of particulates, a conductive filler, and a non-conductive filler, wherein the plurality of particulates include a second crystalline fluorinated polymer. The first crystalline fluorinated polymer has a crystalline melting temperature of between 150 and 190 degrees Celsius. The plurality of particulates including the second crystalline fluorinated polymer are disposed in the conductive composite, having a crystalline melting temperature of between 320 and 390 degrees Celsius and having a particulate diameter of from 1 to 50 micrometers. The conductive filler and the non-conductive filler are dispersed in the conductive composite. | 07-19-2012 |
| 20120188051 | Thermistor and Method for Manufacturing the Same - An NTC thermistor having a metal base material, a thermistor film layer formed on the metal base material, and a pair of split electrodes formed on the thermistor film layer. A ceramic slurry is applied onto a carrier film to form the thermistor film layer, a metal powder containing paste is applied onto the thermistor film layer to form the metal base material, and further an electrode paste is applied onto the metal base material to form the split electrodes. Thereafter, the three substances are integrally fired. | 07-26-2012 |
| 20120268234 | SEMICONDUCTOR CERAMIC COMPOSITION FOR NTC THERMISTORS AND NTC THERMISTOR - Disclosed is a semiconductor ceramic composition for NTC thermistors, which has low dependency on firing temperatures, reduced variations in the resistance values after a resistance-adjusting operation, and reduced changes in resistance in high-temperature environments. The semiconductor ceramic composition contains Mn, Ni and Fe, wherein the molar ratios of Mn and Ni are in ranges of 70 to 80 mol % and 20 to 30 mol %, respectively, relative to the total content (100 mol %) of Mn and Ni, and the Fe content is in a range of 15 parts by mole to 25 parts by mole, both inclusive, relative to the total molar amount (100 parts by mole) of Mn and Ni. Preferably, Co is additionally present in an amount of 2 parts by mole to 40 parts by mole, both inclusive, relative to the total molar amount (100 parts by mole) of Mn and Ni. | 10-25-2012 |
| 20120293299 | RESISTOR WITH TEMPERATURE COEFFICIENT OF RESISTANCE (TCR) COMPENSATION - A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals. | 11-22-2012 |
| 20130015943 | SURFACE-MOUNT TYPE OVERCURRENT PROTECTION ELEMENTAANM Liu; ZhengpingAACI ShanghaiAACO CNAAGP Liu; Zhengping Shanghai CNAANM Liu; YutangAACI ShanghaiAACO CNAAGP Liu; Yutang Shanghai CNAANM Wang; JunAACI ShanghaiAACO CNAAGP Wang; Jun Shanghai CNAANM Yang; JinhuaAACI ShanghaiAACO CNAAGP Yang; Jinhua Shanghai CNAANM Gao; DaohuaAACI ShanghaiAACO CNAAGP Gao; Daohua Shanghai CNAANM Cheng; ZhenAACI ShanghaiAACO CNAAGP Cheng; Zhen Shanghai CNAANM Li; QuantaoAACI ShanghaiAACO CNAAGP Li; Quantao Shanghai CNAANM Sun; TianjuAACI ShanghaiAACO CNAAGP Sun; Tianju Shanghai CN - A surface-mount type over-current protection element includes two single-layer composite chips, wherein one chip is made of a first core material and a first and a second metallic foil layer attached on the two surfaces of the first core material, the other chip is made of a second core material and a third and a fourth metallic foil layer attached to the two surfaces of the second core material. The protection element also has an insulating layer arranged between the two chips to electrically insulate and bond to the second and third metallic layers to form a bi-layer composite chip. Part of the first metallic foil layer and the corresponding part of the fourth metallic foil layer are etched to expose part of the first core material and correspond part of the second core material. One or more through-holes are made on the bi-layer composite chip for mounting. | 01-17-2013 |
| 20130015944 | EXTERNAL OPERATION THERMAL PROTECTOR - Terminal plates | 01-17-2013 |
| 20130021134 | PTC MATERIAL COMPOSITION FOR MAKING A PTC CIRCUIT PROTECTION DEVICE - A PTC material composition for making a PTC circuit protection device comprises a PTC polymer unit and a conductive filler containing a plurality of titanium carbide particles. The titanium carbide particles have a residual oxygen content greater than 0.3 wt % based on the weight of the titanium carbide particles. | 01-24-2013 |
| 20130187748 | SURFACE MOUNTABLE THERMISTOR - A surface mountable thermistor comprises a resistive device, first and second electrodes, and at least one heat conductive dielectric layer. The resistive device contains first and second electrically conductive members and a polymeric material layer laminated therebetween. The polymeric material layer exhibits PTC or NTC behavior. The polymeric material layer and the first and second electrically conductive members commonly extend in a first direction. The first electrode is electrically coupled to the first electrically conductive member. The second electrode is electrically coupled to the second electrically conductive member and is insulated from the first electrode. The heat conductivity of the first electrode or the second electrode is at least 50 W/mK. The heat conductive dielectric layer comprises polymeric insulation matrix and heat conductive filler, and is disposed between the first electrode and the second electrode. The heat conductivity of heat conductive dielectric layer is between 1.2 W/mK-13 W/mK. | 07-25-2013 |
| 20130200987 | THERMISTOR - A thermistor includes a resistive device, a first insulation layer, a first electrode, a second electrode and a first heat-conductive layer. The resistive device includes a first electrically conductive member, a second electrically conductive member and a polymeric material layer laminated therebetween. The polymeric material layer exhibits positive temperature coefficient (PTC) or negative temperature coefficient (NTC) behavior. The first insulation layer is disposed on the first electrically conductive member. The first electrode is electrically coupled to the first electrically conductive member, whereas the second electrode is electrically coupled to the second electrically conductive member and is insulated from the first electrode. The first heat-conductive layer is disposed on the first insulation layer, and has a heat conductivity of at least 30 W/m-K and a thickness of 15-250 μm. | 08-08-2013 |
| 20130200988 | OVER-CURRENT PROTECTION DEVICE - An over-current protection device includes two metal foils and a PTC material layer. The PTC material layer is laminated between the two metal foils and has a resistivity less than 0.4 Ω-cm. The PTC material layer includes crystalline polymer and electrically conductive ceramic filler dispersed in the crystalline polymer. The conductive ceramic filler is of HCP structure and includes 70-95% by weight of the PTC material layer. The trip jump value of the over-current protection device after 300 times trip is less than or equal to 25. The resistance repeatability of the device can be effectively improved by adding the conductive ceramic filler. | 08-08-2013 |
| 20130207770 | Resistance Component and Method for Producing a Resistance Component - A resistance component includes a stack of ceramic layers and inner electrodes. Inner electrodes of a first type are electrically conductively connected to a first external contact and inner electrodes of a second type are electrically conductively connected to a second external contact. The inner electrodes of the first type are arranged such that there is no overlap with the inner electrodes of the second type. An inner electrode of a third type, which is electrically conductively connected neither to the first external contact nor to the second external contact, at least partially overlaps the inner electrodes of the first type and the inner electrodes of the second type. | 08-15-2013 |
| 20130222106 | CHIP THERMISTOR AND THERMISTOR ASSEMBLY BOARD - A chip thermistor is provided with a thermistor element body, a first electrode, a second electrode, and a third electrode. The thermistor element body has a first principal face and a second principal face opposed to each other in a first direction. The first electrode and the second electrode are arranged as separated from each other in a second direction perpendicular to the first direction, on the first principal face of the thermistor element body. The third electrode is arranged so as to lap over the first electrode and the second electrode, when viewed from the first direction, on the second principal face of the thermistor element body. | 08-29-2013 |
| 20130229256 | SEMICONDUCTOR CERAMIC COMPOSITION FOR NTC THERMISTORS - A semiconductor ceramic composition for use as a component of the body of NTC thermistors contains at least manganese and cobalt as main ingredients and both aluminum and titanium as additional ingredients for resistance adjustment by annealing. It becomes easier to adjust the resistance of the composition by annealing when the titanium content is equal to or lower than about 9.2 parts by weight on a TiO | 09-05-2013 |
| 20130229257 | SEMICONDUCTOR CERAMIC AND RESISTIVE ELEMENT - Provided is a resistive element which is excellent in inrush current resistance even in the case of having a surface-mountable small chip shape. The resistive element has an element main body composed of a semiconductor ceramic in which a main constituent thereof is composed of a Mn compound represented by the general formula (Nd | 09-05-2013 |
| 20130300533 | Ceramic Multilayered Component and Method for Producing a Ceramic Multilayered Component - A ceramic multilayered component which includes a layer stack having a plurality of ceramic layers. The multilayered component includes a first and a second connecting contact as well as a first and a second inner electrode, which are each arranged between two layers of the layer stack. The multilayered component includes a first and a second via electrode for electrically coupling the first connecting contact to the first inner electrode and for electrically coupling the second connecting contact to the second inner electrode. | 11-14-2013 |
| 20140035718 | OVER-CURRENT PROTECTION DEVICE - An over-current protection device is of an approximately quadrilateral structure with upper and lower surfaces, first and second side surfaces, in which the second side surface contains a bevel. The device comprises first and second electrodes, a first PTC material layer, and first and second conductive connecting members. The first electrode is formed on the upper or lower surface. The second electrode is formed on the lower surface and is insulated from the first electrode. The first PTC material layer extends along the upper surface and has a first surface electrically coupled to the first electrode, and a second surface electrically coupled to the second electrode. The first conductive connecting member is formed on the first side surface and is electrically coupled to the first electrode. The second conductive connecting member is formed on the second side surface and extends along the bevel to electrically couple to the second electrode. | 02-06-2014 |
| 20140035719 | OVER-CURRENT PROTECTION DEVICE AND METHOD OF MAKING THE SAME - An over-current protection device has a PTC device, first and second electrodes and an insulation layer. The PTC device comprises first and second electrically conductive members and a PTC layer laminated between the first and second electrically conductive members. The first and second electrodes are electrically connected to the first and second electrically conductive members, respectively. The insulation layer is disposed on a surface of the first electrically conductive member. The device is a stack structure extending along a first direction, and comprises at least one hole extending along a second direction substantially perpendicular to the first direction. The value of the covered area of the hole divided by the area of the form factor of the over-current protection device is not less than 2%, and the value of the thickness of the device divided by the number of the PIC devices is less than 0.7 mm. | 02-06-2014 |
| 20140049357 | OVER-CURRENT PROTECTION DEVICE - An over-current protection device comprises a PTC material layer, a first electrode layer and a second electrode layer. The PTC material layer has opposite first and second surfaces and opposite first and second lateral surfaces. The first electrode layer is in physical contact with the first surface of the PTC material layer and extends to the first lateral surface. The second electrode layer is in physical contact with the first surface of the PTC material layer and extends to the second lateral surface. The second electrode layer is insulated from the first electrode layer by a first separation. The first electrode layer and the second electrode layer are substantially laterally symmetrical, and serve as interfaces for current flowing in and out of the device when the over-current protection device is in use. | 02-20-2014 |
| 20140091896 | SURFACE MOUNTABLE OVER-CURRENT PROTECTION DEVICE - A surface-mountable over-current protection device comprises one PTC material layer, first and second connecting conductors, first and second electrodes and an insulating layer. The PTC material layer has a resistivity less than 0.2 Ω-cm, and comprises crystalline polymer and conductive filler dispersed therein. The first and second connecting conductors are capable of effectively dissipating heat generated from the PTC material layer. The first and second electrodes are electrically connected to first and second surfaces of the PTC material layer through the first and second connecting conductors, respectively. The dissipation factor depending on the ratio of the total area of the electrodes and the conductors to the area of the PTC material layer is greater than 0.6. At 25° C., the value of the hold current of the device divided by the product of the area of the PTC material layer and the number of the PTC material layer is greater than 1A/mm | 04-03-2014 |
| 20140111300 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - There is provided a method of manufacturing a multilayer ceramic electronic component including: preparing a ceramic body including internal electrodes; forming electrode layers including at least one conductive metal selected from a group consisting of copper (Cu), silver (Ag), palladium (Pd), and platinum (Pt), an alloy thereof, or a coating material and electrically connected to the internal electrodes on external surfaces of the ceramic body; forming nickel (Ni) layers on external surfaces of the electrode layers by a firing method; and forming tin (Sn) layers on external surfaces of the nickel (Ni) layers by a firing method. | 04-24-2014 |
| 20140125448 | CHIP THERMISTOR - A chip thermistor comprises a thermistor element body and a pair of outer electrodes. The thermistor element body has a pair of end faces opposing each other and a main face connecting the end faces to each other. The pair of outer electrodes are arranged on the pair of end faces, respectively. The pair of outer electrodes have a width in a direction intersecting the opposing direction of the pair of end faces made narrower with distance from the thermistor element body. | 05-08-2014 |
| 20140232514 | THERMISTOR AND METHOD FOR MANUFACTURING THE SAME - A thermistor that includes a metal substrate layer, a thermistor thin film formed on the metal substrate layer, and electrode films formed on the thermistor thin film. The metal substrate layer and the electrode films contain a Ag—Pd alloy, and the content of Pd of the Ag—Pd alloy is 10 percent by weight or more. | 08-21-2014 |
| 20140266567 | THERMISTOR ELEMENT, TEMPERATURE SENSOR, AND METHOD FOR MANUFACTURING THE THERMISTOR ELEMENT - A thermistor element includes a thermistor main body having a rectangular parallelepiped shape, and a first covering layer having reduction resistance and covering the periphery of the thermistor main body. At least a portion (exposed outer surface) of the outer surface of the first covering layer is exposed to the outside. When the shortest distance in a straight line in the first covering layer extending from a starting point on the thermistor main body to the exposed outer surface is defined as an exposed layer thickness at the starting point, the first covering layer is formed such that an exposed layer thickness measured by using any vertex of the rectangular parallelepiped thermistor main body as a starting point is equal to or greater than the smallest one of exposed layer thicknesses measured by using points on three sides and three flat surfaces which form the vertex. | 09-18-2014 |
| 20140327513 | Macromolecule-based conductive composite material and PTC element - A macromolecule-based conductive composite material and a PTC element. The macromolecule-based conductive composite material comprises: a macromolecule base material, having a volume fraction of the macromolecule base material of 20%-75%; a conductive filler with a core-shell granule structure and dispersed in the macromolecule base material, having a volume fraction of 25%-80%; and a coupling agent, being a titanate coupling agent and accounting for 0%-5% of the volume of the conductive filler. The PTC element prepared by using the macromolecule-based conductive composite material comprises at least two metal electrode plates ( | 11-06-2014 |
| 20150028992 | CHIP THERMISTOR AND METHOD OF MANUFACTURING SAME - A chip thermistor | 01-29-2015 |
| 20150042445 | METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR - Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. | 02-12-2015 |
| 20150061820 | METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR - Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. | 03-05-2015 |
| 20150061821 | METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR - Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. | 03-05-2015 |
| 20150070127 | NTC THERMISTOR ELEMENT AND METHOD AND METHOD FOR PRODUCING THE SAME - A NTC thermistor element that includes a substrate composed of a ceramic material containing Mn, Ni, Fe and Ti; and a pair of external electrodes on the substrate. When the molar amount of Mn in the substrate is a [mol %] and the molar amount of Ni in the substrate is b [mol %], a and b satisfy a+b=100, 44.90≦a≦65.27 and 34.73≦b≦55.10. When the molar amount of Fe is c [mol %] and the molar amount of Ti is d [mol %], c and d satisfy 24.22≦c≦39.57 and 5.04≦d≦10.18 based on a+b=100. | 03-12-2015 |
| 20150145639 | LAMINATED CHIP COMPOSITE RESISTOR COMBINING THERMISTOR AND VARISTOR AND PREPARATION METHOD THEREOF - Provided are a laminated chip composite resistor combining a thermistor and a varistor, and a preparation method thereof. The composite resistor comprises a varistor part, a transition layer part and a thermistor part overlapped sequentially, wherein the varistor part is formed by alternately laminating a ceramic layer of a varistor, a first electrode layer, another ceramic layer of a varistor and a second electrode layer; the thermistor part is formed by alternately laminating a ceramic layer of a thermistor, a third electrode layer, another ceramic layer of a thermistor and a fourth electrode layer; and the transition layer part is located between the thermistor part and the varistor part. Co-firing is employed and the base metal Ni is the main material of inner electrodes, which can reduce costs, simplify the preparation process, and improve the reliability. | 05-28-2015 |
| 20150380133 | NEGATIVE DIFFERENTIAL RESISTANCE DEVICE - Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes. | 12-31-2015 |
| 20160027560 | PTC THERMISTOR CERAMIC COMPOSITION AND PTC THERMISTOR ELEMENT - A barium titanate based PTC thermistor ceramic composition without using Pb. Its Curie temperature is shifted to a temperature higher than 120° C. The PTC thermistor can readily turn semiconductive even if it is sintered in air. The resistivity at 25° C. is low and the variation rate of the resistivity at 25° C. with time is little. The PTC thermistor ceramic composition includes a sintered body having a barium titanate based compound represented by formula (1) as the main component, (Ba | 01-28-2016 |
| 20160035468 | POSITIVE TEMPERATURE COEFFICIENT DEVICE - A PTC device comprises two electrode layers and a PTC material layer laminated therebetween. The PTC material layer has a volumetric resistivity less than 0.2 Ω-cm, and comprises a crystalline polymer, conductive ceramic fillers and crystalline low molecular weight organic compound. The crystalline polymer comprises thermoplastic polymer, thermosetting polymer or combination thereof. The conductive ceramic fillers dispersed in the crystalline polymer have volumetric resistivity less than 500 μΩ-cm, and comprise 40-70% by volume of the PTC material layer. The crystalline low molecular weight organic compound has a molecular weight less than 5000, and comprises 6-30% by volume of the PTC material layer. The hold current at 60° C. divided by a covered area of the PTC device is greater than 0.2 A/mm | 02-04-2016 |
| 20160042845 | Electrical Device - An electrical device having first and second electrodes and a layer of a conductive composite electrically in contact with the first and second electrodes. The conductive composite is a mixture of a semi-crystalline polymer and a conductive filler, the conductive filler including a plurality of particles containing an inner material including a first metal; and an outer material surrounding the inner material, the outer material including a second metal; and an intermetallic compound formed between the inner material and the outer material. The intermetallic compound has features from the inner material and the outer material. The device can be a circuit protection device. Also provided is a method of making a conductive composite by dry mixing the components. | 02-11-2016 |
| 20160090661 | CERAMIC ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREFOR - A ceramic electronic component includes a ceramic body, baked external electrodes, and plated external electrodes, and glass layers derived from a glass material included in a conductive paste of the baked external electrodes, are provided at interfaces between the baked external electrodes and the ceramic body, such that the glass layers extend from the interfaces between the ceramic body and the baked external electrodes to a surface of the ceramic body that does not contain the baked external electrodes. | 03-31-2016 |
| 20160093414 | PTC COMPOSITION AND OVER-CURRENT PROTECTION DEVICE CONTAINING THE SAME - A PTC composition comprises crystalline polymer and conductive filler. The conductive filler comprises tungsten carbide powder dispersed in the crystalline polymer, and the tungsten carbide powder comprises impurity of less than 7% by weight. The impurity comprises the materials other than tungsten monocarbide. | 03-31-2016 |
| 20160104559 | Method for Manufacturing a Surface Mount Device - A method of manufacturing a surface mount device includes forming a plaque from a material, forming a plurality of conductive protrusions on a top surface and a bottom surface of the plaque, and applying a liquid encapsulant over at least a portion of the top surface and at least a portion of the bottom surface of the plaque. The liquid encapsulant is cured and when cured encapsulant has an oxygen permeability of less than about 0.4 cm3·mm/m2·atm·day. The assembly is cut to provide a plurality of components. After cutting, the top surface of each component includes at least one conductive protrusion, the bottom surface of each component includes at least one conductive protrusion, the top surface and the bottom surface of each component include the cured encapsulant, and a core of each component includes the material. | 04-14-2016 |
| 20160118165 | METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR - Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V | 04-28-2016 |
| 20160118166 | PTC THERMISTOR MEMBER - A PTC thermistor device has a PTC thermistor member and electrodes. The electrodes, are formed on respective surfaces of the PTC thermistor member. The PTC thermistor member contains a matrix phase, and conductive particles dispersed throughout the matrix phase. The matrix phase contains an electrically insulating first inorganic material and an electrically insulating second inorganic material. The first inorganic material undergoes phase transition in terms of crystal structure type and change in volume, at the phase transition temperature thereof. The second inorganic material is fibrous. | 04-28-2016 |
| 20160125982 | METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR - Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M | 05-05-2016 |
| 20160133363 | METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR - Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V | 05-12-2016 |
| 20160155546 | THERMISTOR ELEMENT | 06-02-2016 |
| 20160163429 | OVER-CURRENT PROTECTION DEVICE AND PROTECTIVE CIRCUIT MODULE CONTAINING THE SAME - An over-current protection device comprises a PTC device and a first external lead. The PTC device comprises first and second conductive layers and a PTC material layer laminated therebetween. The first conductive layer forms an upper surface of the PTC device. The first external lead has a lower surface soldered to the first conductive layer. The lower surface is provided with a plurality of protrusions of which tops are in direct contact with the first conductive layer to form a gap between the first external lead and the first conductive layer. Solder paste fills the gap to form an electrically conductive connecting layer. The over-current protection device may further comprise a second external lead with protrusions soldered to the second conductive layer to form an axial-lead or a radial-lead type device. | 06-09-2016 |
| 20170236624 | THERMISTOR ELEMENT | 08-17-2017 |
| 20080204186 | MULTILAYER POSITIVE TEMPERATURE COEFFICIENT THERMISTOR - A multilayer positive temperature coefficient thermistor that has a BaTiO | 08-28-2008 |
| 20080204187 | MULTILAYER POSITIVE TEMPERATURE COEFFICIENT THERMISTOR - A multilayer positive temperature coefficient thermistor that has semiconductor ceramic layers containing a BaTiO | 08-28-2008 |
| 20090146774 | PTC-RESISTOR - A PTC-resistor includes a base body made of a ceramic material with a positive temperature coefficient of resistance. The base body extends along a median plane, and is confined by surfaces. At least one surface is configured to electrically connect the base body. An area of the at least one surface is larger than an area of a parallel projection of the base body in a direction perpendicular to the median plane. | 06-11-2009 |
| 20090167482 | SURFACE-MOUNT NEGATIVE-CHARACTERISTIC THERMISTOR - A surface-mount negative-characteristic thermistor includes a ceramic body composed of a semiconductor ceramic material including at least one of Mn, Ni, and Ti; external electrodes disposed on surfaces of the ceramic body; and plating films disposed on surfaces of the external electrodes. When the molar quantity of Mn in the semiconductor ceramic material is represented by a and when the molar quantity of Ni in the semiconductor ceramic material is represented by b, the molar ratio of Mn to Ni is in the range of 55/45≦a/b≦90/10, and when the total molar quantity of Mn and Ni in the semiconductor ceramic material is defined as 100 parts by mole, the content of Ti is in the range of about 0.5 parts by mole to about 25 parts by mole. | 07-02-2009 |
| 20090201121 | BARIUM TITANATE-BASED SEMICONDUCTOR PORCELAIN COMPOSITION AND PTC ELEMENT INCLUDING THE SAME - A barium titanate-based semiconductor ceramic composition and a PTC element that have a high Curie temperature and a low electrical resistivity at room temperature and that exhibit a desired rate of change in resistance are provided. The barium titanate-based semiconductor ceramic composition is a ceramic composition having a perovskite structure containing at least barium and titanium, wherein some of the barium is replaced with an alkali metal element, bismuth, and a rare earth element, and when the content of the titanium is assumed to be 100 parts by mole, a ratio of the content of the alkali metal element to the content of the bismuth plus the content of the rare earth element represented by parts by mole, is 1.00 or more and 1.06 or less. A PTC thermistor includes a ceramic body composed of the barium titanate-based semiconductor ceramic composition having the above feature and electrodes disposed on both side faces of the ceramic body. | 08-13-2009 |
| 20100001828 | MULTILAYER POSITIVE TEMPERATURE COEFFICIENT THERMISTOR - A multilayer positive temperature coefficient thermistor includes a ceramic body having semiconductor ceramic layers and internal electrodes, the semiconductor ceramic layers being mainly composed of BaTiO | 01-07-2010 |
| 20100134238 | METAL OXIDE SINTERED COMPACT FOR THERMISTOR, THERMISTOR ELEMENT, THERMISOR TEMPERATURE SENSOR, AND MANUFACTURING METHOD FOR METAL OXIDE SINTERED COMPACT FOR THERMISTOR - A metal oxide sintered compact used for a thermistor includes a composite oxide represented by the general expression La(Cr | 06-03-2010 |
| 20100259358 | HIGHLY DENSE AND NON-GRAINED SPINEL NTC THERMISTOR THICK FILM AND METHOD FOR PREPARING THE SAME - Disclosed herein are a highly dense and nano-grained NTC thermistor thick film and a method for preparing the same, and specifically, an NTC thermistor thick film vacuum deposited by spraying a spinel grained ceramic powder containing Ni and Mn on one side of the surface of a substrate using a room temperature powder spray in vacuum (AD) and a method for preparing the same. According to the present invention, a room temperature powder spray in vacuum (AD) may be used to perform a rapid deposition of NTC thermistor thick films and prepare a highly dense ceramic thick film, the NTC characteristic constant B which would be obtained by doping may be maximized without doping, demagnetization may be obtained without any additional heat treatment, and thus limitations on substrate that the conventional art has may be completely overcome. | 10-14-2010 |
| 20110210815 | SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR - A semiconductor ceramic includes a BaTiO | 09-01-2011 |
| 20110215895 | SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR - A semiconductor ceramic includes a Ba | 09-08-2011 |
| 20110234364 | SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR - A semiconductor ceramic includes a Ba | 09-29-2011 |
| 20110254653 | MULTILAYERED STRUCTURE - A thermistor structure includes a multilayer structure of at least one quantum layer surrounded by barrier layers in a multilayer structure. The quantum layer includes Ge and may be in the form of either a quantum well or quantum dots. The barrier layer is a carbon-doped Si layer, and the thermistor is intended to provide a way to compensate for the strain in a multilayer IR-detector structure through carbon doping of the quantum layer and barrier layers. | 10-20-2011 |
| 20110273265 | SINTERED METAL OXIDE FOR THERMISTOR, THERMISTOR ELEMENT, THERMISTOR TEMPERATURE SENSOR, AND METHOD FOR PRODUCING SINTERED METAL OXIDE FOR THERMISTOR - Disclosed is a sintered metal oxide used for thermistors, which includes a complex oxide represented by the following general formula: La | 11-10-2011 |
| 20120086542 | THERMISTOR - A thermistor includes a multi-layer graphite structure having a basal plane resistivity that increases with increasing temperature; a substrate upon which the graphite structure is mounted; current and voltage electrodes attached to the graphite structure; current and voltage wiring; and a voltage measuring device to measure voltage out when current is applied to the thermistor. | 04-12-2012 |
| 20130181808 | METALLIC SILICIDE RESISTIVE THERMAL SENSOR AND METHOD FOR MANUFACTURING THE SAME - A metallic silicide resistive thermal sensor has a body, a conductive wire and multiple electrodes. The body has multiple etching windows formed on the body and a cavity formed under the etching windows. The etching windows separate the body into a suspended part and multiple connection parts. The conductive wire is formed on the suspended part and the connection parts and is made of metallic silicide. The electrodes are formed on the body and are electrically connected to the conductive wire. The metallic silicide is compatible for common CMOS manufacturing processes. The cost for manufacturing the resistive thermal sensor decreases. The metallic silicon is stable at high temperature. Therefore, the performance of the resistive thermal sensor in accordance with the present invention is improved. | 07-18-2013 |
| 20130200989 | SEMICONDUCTOR CERAMIC ELEMENT AND METHOD FOR PRODUCING SAME - A semiconductor ceramic element includes an element main body where a PTC section including a semiconductor ceramic which has PTC characteristics and an NTC section including a semiconductor ceramic which has NTC characteristics are integrated by co-firing while suppressing interdiffusion. The element main body is formed in such a way that a PTC substrate is first obtained by firing a semiconductor ceramic material to serve as the PTC section at a predetermined temperature, and a paste containing a semiconductor ceramic material to serve as the NTC section is then applied or printed on the PTC substrate, followed by co-firing at a temperature lower than the predetermined temperature. | 08-08-2013 |
| 20130307663 | RESISTOR ARRANGEMENT AND METHOD OF USE - This disclosure relates to a semiconductor device including resistor arrangement including a first resistor electrically connected to a ground voltage and a second resistor in direct physical contact with the first resistor. The second resistor is configured to receive a temperature independent current and the second resistor has thermal properties similar to those of the first resistor. This disclosure also relates to a semiconductor device including a load configured to receive an operating voltage and a voltage source configured to supply the operating voltage. The semiconductor device further includes a resistor arrangement between the load and the voltage source. This disclosure also relates to a method of using a resistor arrangement to calculate an operating current. | 11-21-2013 |
| 20140145818 | THERMISTOR AND METHOD OF CONSTRUCTING A THERMISTOR - A method of constructing a thermistor includes forming a semiconductor ceramic substrate. The method also includes coating a surface of the substrate with contact material and applying a solder mask on the contact material. The applying includes applying the solder mask to one or more portions of the contact material to leave an exposed area without the solder mask and a masked area with the solder mask. The method includes trimming the contact material at the masked area to adjust a resistance of the thermistor. | 05-29-2014 |
| 20140247107 | BARIUM TITANATE SEMICONDUCTOR CERAMIC AND PTC THERMISTOR USING THE SAME - A barium titanate semiconductor ceramic with positive resistance-temperature characteristics, which is represented by the general formula: BaTiO | 09-04-2014 |
| 20150091690 | LAMINATED PTC THERMISTOR ELEMENT - A laminated PTC thermistor element that includes a ceramic substrate including a plurality of ceramic layers, a plurality of internal electrodes within the ceramic substrate, and external electrodes on the surface of the ceramic substrate that provide electrical conduction to the internal electrodes. The ceramic substrate is 0.3 [μm] or more and 1.2 [μm] or less in average porcelain grain size. Furthermore, the relative density of the ceramic substrate has a lower limit of 70 [%], and an upper limit of −6.43 | 04-02-2015 |
| 20150097650 | SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR - A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (Ba | 04-09-2015 |
| 20150109094 | SEMICONDUCTOR CERAMIC COMPOSITION, METHOD FOR PRODUCING SAME, AND PTC ELEMENT - Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO | 04-23-2015 |
| 20160005517 | SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR - A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is represented by formula, | 01-07-2016 |
| 20160064123 | TEMPERATURE INDEPENDENT RESISTOR - The present disclosure relates to a semiconductor structure comprising a positive temperature coefficient thermistor and a negative temperature coefficient thermistor, connected to each other in parallel by means of connecting elements which are configured such that the resistance resulting from the parallel connection is substantially stable in a predetermined temperature range, and to a corresponding manufacturing method. | 03-03-2016 |
