| Entries |
| Document | Title | Date |
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| 20080246559 | Lithographically-defined multi-standard multi-frequency high-Q tunable micromechanical resonators - Disclosed are micromechanical resonator apparatus having features that permit multiple resonators on the same substrate to operate at different operating frequencies. Exemplary micromechanical resonator apparatus includes a support substrate and suspended micromechanical resonator apparatus having a resonance frequency. In one embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a piezoelectric layer formed on the suspended device substrate, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. In another embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a lower electrode formed on the suspended device substrate, a piezoelectric layer formed on the lower electrode, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. The substrate may comprise a silicon substrate, or a semiconductor-on-insulator substrate, such as a diamond on silicon substrate. Additionally, lateral frequency-adjusting electrodes may be disposed adjacent to the resonator apparatus that are separated therefrom by a capacitive gap, and which are configured to receive a direct current voltage that adjusts the resonance frequency of the resonator apparatus. | 10-09-2008 |
| 20080252396 | Electroacoustic Component - A component working with guided bulk acoustic waves includes a first substrate, a second substrate, and a layer system between the first and second substrates. The layer system includes a metal layer and a dielectric layer. A ratio of the acoustic impedance of the metal layer to the acoustic impedance of the dielectric layer is greater than or equal to 4.5. | 10-16-2008 |
| 20080258841 | Wireless acoustic-electric feed-through for power and signal transmission - An embodiment provides electrical energy from a source on one side of a medium to a load on the other side of the medium, the embodiment including a first piezoelectric to generate acoustic energy in response to electrical energy from the source, and a second piezoelectric to convert the received acoustic energy to electrical energy used by the load. Other embodiments are described and claimed. | 10-23-2008 |
| 20080258842 | ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING ALTERNATING FRAME STRUCTURE - Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes. | 10-23-2008 |
| 20080278263 | Low phase noise testing system utilizing a crystal filter - According to one embodiment, a low phase noise testing system includes a tester providing a high phase noise digital channel output. The low phase noise testing system further includes a crystal filter configured to receive the digital channel output and to pass a narrow frequency range from the digital channel output, whereby the high phase noise digital channel output is converted to a low phase noise clock for use by a device under test. The crystal filter can be, for example, a monolithic crystal filter or a discrete crystal filter. | 11-13-2008 |
| 20080284541 | Bulk acoustic device and method for fabricating - A method for fabricating a bulk acoustic wave (BAW) device comprising providing a growth substrate and growing an Group-III nitride epitaxial layer on the growth substrate. A first electrode is deposited on the epitaxial layer. A carrier substrate is provided and the growth substrate, epitaxial layer and first electrode combination is flip-chip mounted on the carrier substrate. The growth substrate is removed and a second electrode is deposited on the epitaxial layer with the epitaxial layer sandwiched between the first and second electrodes. A bulk acoustic wave (BAW) device comprises first and second metal electrodes and a Group-III nitride epitaxial layer sandwiched between the first and second electrodes. A carrier substrate is included, with the first and second electrodes and epitaxial layer on the carrier substrate. | 11-20-2008 |
| 20080284542 | FILM BULK ACOUSTIC RESONATOR - A film bulk acoustic resonator includes: a substrate; a lower electrode held on the substrate with at least a portion thereof being in a hollow state; a piezoelectric film provided on the lower electrode; and an upper electrode provided on the piezoelectric film. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a first element having a negatively larger free energy of oxide formation (ΔG) than copper. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a second element having smaller surface energy than copper. | 11-20-2008 |
| 20080284543 | PIEZOELECTRIC THIN-FILM RESONATOR AND FILTER - A piezoelectric thin-film resonator includes: a lower electrode that is formed on a substrate; a piezoelectric film that is formed on the substrate and the lower electrode; an upper electrode that is formed on the piezoelectric film, with a portion of the piezoelectric film being interposed between the lower electrode and the upper electrode facing each other; and an additional film that is formed on the substrate on at least a part of the outer periphery of the lower electrode at the portion at which the lower electrode and the upper electrode face each other, with the additional film being laid along the lower electrode. | 11-20-2008 |
| 20090015351 | NANO-ELECTROMECHANICAL CIRCUIT USING CO-PLANAR TRANSMISSION LINE - A co-planar waveguide structure is integrated with an upwardly extending resonant pillar to produce transfer cells that provide controlled transmission of electricity between adjacent structures of the co-planar waveguide in order to produce easily fabricated electronic devices operating at megahertz and gigahertz speeds for filtration, modulation, rectification, and mixing of high-frequency signals. | 01-15-2009 |
| 20090115552 | PACKAGE FOR SUPPRESSING SPURIOUS RESONANCE IN AN FBAR - Disclosed is a package having a thin film bulk acoustic resonator (FBAR). The package may be utilized for suppressing spurious resonance occurred during operation of the FBAR. The package includes a negative impedance converter (NIC) operatively coupled to the FBAR through at least one interconnect. The at least one interconnect includes transmission lines and bonding wires. The package further includes a filter operatively coupled to the NIC. The filter exhibits a parallel resonance at a predefined frequency. The parallel resonance exhibited by the filter is converted to a series resonance by the NIC such that the series resonance of the NIC is responsible for suppressing the spurious resonance occurring during the operation of the FBAR. | 05-07-2009 |
| 20090121809 | Thin Film Elastic Wave Resonator - An upper electrode ( | 05-14-2009 |
| 20090128260 | Electrical Component - An electrical component with a filter circuit is specified that includes a first bandstop filter and a second bandstop filter. The first bandstop filter includes at least one resonator operating with acoustic waves and has a first stop band. The second bandstop filter includes LC elements and has a second stop band that lies at least one octave higher than the first stop band. | 05-21-2009 |
| 20090134957 | Film bulk acoustic resonator package and method for manufacturing the same - A film bulky acoustic resonator (FBAR) package and a method for manufacturing the package are provided. A top surface of a FBAR on a substrate is entirely covered with a cap and a signal line connected to an external circuit unit is directly attached to a bonding pad of the FBAR through a substrate via-hole formed through the substrate. Since the signal line connected to the external circuit unit is directly attached to the bonding pad of the FBAR through the substrate via-hole formed through the substrate, a process for attaining a signal line connection space of the external circuit unit can be omitted. Therefore, an overall working process can be simplified and the manufacturing cost can be reduced, while improving the production yield. Furthermore, a size of the FBAR can be remarkably reduced. In addition, as described above, when the signal line connected to the external circuit unit is directly attached to the boding pad through a bottom of the substrate, a length of the signal line can be minimized and thus the deterioration of the FBAR, which may be caused during a wafer level packaging process, can be reduced. | 05-28-2009 |
| 20090153268 | THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS - A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer ( | 06-18-2009 |
| 20090251235 | BULK ACOUSTIC WAVE RESONATOR FILTER BEING DIGITALLY RECONFIGURABLE, WITH PROCESS - A filtering circuit with BAW type acoustic resonators having at least a first quadripole and a second quadripole connected in cascade, each quadripole having a branch series with a first acoustic resonator of type BAW and a branch parallel with each branch having an acoustic resonator of type BAW, the first acoustic resonator having a frequency of resonance series approximately equal to the frequency of parallel resonance of the second acoustic resonator, the branch parallel of the first quadripole having a first capacitance connected in series with the second resonator and, in parallel with the capacitance, a first switching transistor to short circuit the capacitance. | 10-08-2009 |
| 20090273415 | BULK ACOUSTIC RESONATOR ELECTRICAL IMPEDANCE TRANSFORMERS - An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same. | 11-05-2009 |
| 20090302973 | Bulk Acoustic Resonators with Multi-Layer Electrodes - Bulk acoustic resonators with multi-layer electrodes for Bulk Acoustic Wave (BAW) resonator devices. Various electrode combinations are disclosed. The invention provides a better compromise at resonant frequencies from 1800 MHz to 4 GHz in terms of keff2 and resistance than state of the art solutions using either Mo, or a bilayer of Al and W. | 12-10-2009 |
| 20100013575 | RESONANT DEVICE, COMMUNICATION MODULE, COMMUNICATION DEVICE, AND METHOD FOR MANUFACTURING RESONANT DEVICE - A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity. | 01-21-2010 |
| 20100019864 | FILM BULK ACOUSTIC RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION DEVICE - There is provided a film bulk acoustic resonator which has a substrate, a lower electrode formed on the substrate, a piezoelectric membrane formed on the lower electrode, an upper electrode formed on the piezoelectric membrane, and an insulating film disposed adjacent to the piezoelectric membrane between the upper electrode and the substrate and at a position at which the upper electrode and the substrate are opposed each other. The substrate is preferably formed so as to form a void at a portion facing to the lower electrode. The lower electrode has preferably a tapered end and a part of the boundary between the piezoelectric membrane and the insulating film is disposed on an inside from the upper end of the tapered end. | 01-28-2010 |
| 20100033268 | PIEZOELECTRIC RESONATOR DEVICE - A piezoelectric resonator device includes a metal base through which at least two metal lead terminals are erected via an insulating material, a piezoelectric resonator plate that is placed on the metal lead terminals and is electrically connected to the metal lead terminals via an electroconductive resin adhesive, and a metal lid that hermetically covers the piezoelectric resonator plate placed on the metal lead terminals. | 02-11-2010 |
| 20100060385 | PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND COMMUNICATION APPARATUS - A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the substrate and the lower electrode, and an upper electrode formed on the piezoelectric film and opposing the lower electrode, an upper electrode formed on the piezoelectric film. The upper electrode has a main portion and an extended portion connected to the main portion, the main portion opposing the lower electrode and an opening disposed between the substrate and the lower electrode, the extended portion having a portion which opposes the opening and the substrate. | 03-11-2010 |
| 20100060386 | BULK ACOUSTIC WAVE RESONATOR WITH ADJUSTABLE RESONANCE FREQUENCY AND USE OF SUCH A RESONATOR IN THE FIELD OF TELEPHONY - A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator. | 03-11-2010 |
| 20100066467 | Lithographically Defined Multi-Standard Multi-Frequency High-Q Tunable Micromechanical Resonators - Disclosed are micromechanical resonator apparatus having features that permit multiple resonators on the same substrate to operate at different operating frequencies. Exemplary micromechanical resonator apparatus includes a support substrate and suspended micromechanical resonator apparatus having a resonance frequency. In one embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a piezoelectric layer formed on the suspended device substrate, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. In another embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a lower electrode formed on the suspended device substrate, a piezoelectric layer formed on the lower electrode, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. The substrate may comprise a silicon substrate, or a semiconductor-on-insulator substrate, such as a diamond on silicon substrate. Additionally, lateral frequency-adjusting electrodes may be disposed adjacent to the resonator apparatus that are separated therefrom by a capacitive gap, and which are configured to receive a direct current voltage that adjusts the resonance frequency of the resonator apparatus. | 03-18-2010 |
| 20100073106 | BAW Resonator Filter Bandwidth and Out-of-Band Frequency Rejection - Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter. | 03-25-2010 |
| 20100109809 | THIN FILM PIEZOELECTRIC RESONATOR AND THIN FILM PIEZOELECTRIC FILTER - Provided is a thin film piezoelectric resonator which includes a piezoelectric resonator stack ( | 05-06-2010 |
| 20100117762 | RESONATOR, FILTER AND ELECTRONIC DEVICE - A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film. | 05-13-2010 |
| 20100134209 | DEVICE COMPRISING A PIEZOACOUSTIC RESONATOR ELEMENT AND INTEGRATED HEATING ELEMENT, METHOD FOR PRODUCING THE SAME AND METHOD FOR OUTPUTTING A SIGNAL DEPENDING ON A RESONANT FREQUENCY - A device includes at least one piezoacoustic resonator element ( | 06-03-2010 |
| 20100156565 | FILM BULK ACOUSTIC RESONATOR - An object is to provide a film bulk acoustic resonator capable of improving resonant characteristics by reducing the generation of a standing wave to be caused by a transverse-mode acoustic wave to a minimum. In a film bulk acoustic resonator including a resonant portion A having a piezoelectric material layer | 06-24-2010 |
| 20100176899 | COMPONENT HAVING STRESS-REDUCED MOUNTING - A component ( | 07-15-2010 |
| 20100194499 | Micro-Electromechanical Devices Having Variable Capacitors Therein that Compensate for Temperature-Induced Frequency Drift in Acoustic Resonators - Micro-electromechanical devices include a temperature-compensation capacitor and a thin-film bulk acoustic resonator having a first terminal electrically coupled to an electrode of the temperature-compensation capacitor. The temperature-compensation capacitor includes a bimorph beam having a first electrode thereon and a second electrode extending opposite the first electrode. This bimorph beam is configured to yield an increase in spacing between the first and second electrodes in response to an increase in temperature of the micro-electromechanical device. This increase in spacing between the first and second electrodes leads to a decrease in capacitance of the temperature-compensation capacitor. Advantageously, this decrease in capacitance can be used to counteract a negative temperature coefficient of frequency associated with the thin-film bulk acoustic resonator, and thereby render the resonant frequency of the micro-electromechanical device more stable in response to temperature fluctuations. | 08-05-2010 |
| 20100231329 | BAW STRUCTURE WITH REDUCED TOPOGRAPHIC STEPS AND RELATED METHOD - According to one embodiment, a method of forming a segment of a layer of material, where the segment of the layer of material has at least one tapered sidewall, is disclosed, where the method includes forming a mask over the layer of material. The method includes etching the mask and the layer of material in an etch process by controlling an etch rate of the mask and an etch rate of the layer of material so as to form the segment of the layer of material with the at least one tapered sidewall. A first etch chemistry is used to etch the mask and a second etch chemistry is used to etch the layer of material. The etch rates of the mask and the layer of material can be controlled by controlling a ratio of the first and second etch chemistries. The method can be utilized to fabricate BAW structures. | 09-16-2010 |
| 20100277257 | ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING SELECTIVE METAL ETCH - An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode. | 11-04-2010 |
| 20100295631 | BULK ACOUSTIC WAVE RESONATOR AND METHOD FOR MANUFACTURING SAID RESONATOR - A resonant device including a stack of a first metal layer, a piezoelectric material layer, and a second metal layer formed on a silicon substrate, a cavity being formed in depth in the substrate, the thickness of the silicon above the cavity having at least a first value in a first region located opposite to the center of the stack, having a second value in a second region located under the periphery of the stack and having at least a third value in a third region surrounding the second region, the second value being greater than the first and the third values. | 11-25-2010 |
| 20100327994 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator. | 12-30-2010 |
| 20110006860 | FILM BULK ACOUSTIC RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION APPARATUS - A piezoelectric thin film resonator of the present has a substrate | 01-13-2011 |
| 20110037538 | Method for Producing an Electric Component Comprising at Least One Dielectric Layer, and Electric Component Comprising at Least One Dielectric Layer - A method for producing an electric component including a dielectric layer on a substrate, includes the method steps of applying a metallic layer to the substrate and oxidizing the metallic layer to form a dielectric layer, wherein at least one partial region of the metallic layer is fully oxidized through the entire thickness of the layer. | 02-17-2011 |
| 20110037539 | BULK ACOUSTIC WAVE RESONATOR - A resonator comprises a bottom electrode layer ( | 02-17-2011 |
| 20110050366 | MEMS Resonators Having Resonator Bodies Therein with Concave-Shaped Sides that Support High Quality Factor and Low Temperature Coefficient of Resonant Frequency - A microelectromechanical (MEMs) resonator includes a concave bulk acoustic resonator (CBAR). One embodiment of a CBAR includes a substrate and a resonator body suspended over the substrate by a pair of fixed supports that attach to first and second opposing ends of the resonator body. The resonator body has a first concave-shaped side extending between the first and second ends of the resonator body and a second concave-shaped side extending opposite the first concave-shaped side. The resonator body may be configured to have a minimum spacing of λ/2 between the first and second concave-shaped sides, where λ is a wavelength associated with a resonant frequency of said resonator body. | 03-03-2011 |
| 20110080232 | METHOD FOR MANUFACTURING A BAW RESONATOR WITH A HIGH QUALITY FACTOR - A method for manufacturing a bulk acoustic wave resonator, each resonator including: above a substrate, a piezoelectric resonator, and next to the piezoelectric resonator, a contact pad connected to an electrode of the piezoelectric resonator; and, between the piezoelectric resonator and the substrate, a Bragg mirror including at least one conductive layer extending between the pad and the substrate and at least one upper silicon oxide layer extending between the pad and the substrate, the method including the steps of: depositing the upper silicon oxide layer; and decreasing the thickness unevenness of the upper silicon oxide layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each pad. | 04-07-2011 |
| 20110080233 | METHOD FOR MANUFACTURING BAW RESONATORS ON A SEMICONDUCTOR WAFER - A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator. | 04-07-2011 |
| 20110084779 | BULK ACOUSTIC WAVE RESONATOR AND METHOD OF FABRICATING SAME - An acoustic resonator with improved quality factor and electro-mechanical coupling is disclosed. In one embodiment, the acoustic resonator includes an acoustic mirror formed on the top surface of a substrate or in the substrate, a first electrode having a end portion, formed on the acoustic mirror, a piezoelectric layer formed on the first electrode; and a second electrode formed on the piezoelectric layer, where at least one of the first electrode and the second electrode and the piezoelectric layer define an air gap in a region that overlaps the end portion of the first electrode. In one embodiment, a dielectric film is deposited on the surface of the end portion of the first electrode to form completely planarized surface before the piezoelectric layer deposition. In another embodiment, an air gap between the second electrode and the piezoelectric layer, so that the piezoelectric coupling in the end portion area of the first electrode is minimally contributed into the whole resonator. | 04-14-2011 |
| 20110095849 | BALUN INCLUDING A FILM BULK ACOUSTIC RESONATOR - Disclosed is a balun including a film bulk acoustic resonator (FBAR). The balun may be implemented using the FBAR to fabricate a small sized balun. Also, the balun may be implemented using the FBAR, thereby reducing a difference in two outputs. | 04-28-2011 |
| 20110109405 | Low Temperature BI-CMOS Compatible Process For MEMS RF Resonators and Filters - A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane. | 05-12-2011 |
| 20110121915 | PASSIVATION LAYERS IN ACOUSTIC RESONATORS - An acoustic resonator, comprises a substrate and a first passivation layer disposed over the substrate. The first passivation layer comprises a first layer of silicon carbide (SiC). The acoustic resonator further comprises a first electrode disposed over the passivation layer, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator comprises a second passivation layer disposed over the second electrode. The second passivation layer comprises a second layer of silicon carbide (SiC). | 05-26-2011 |
| 20110121916 | HYBRID BULK ACOUSTIC WAVE RESONATOR - A hybrid bulk acoustic wave (BAW) resonator comprises a first electrode, a second electrode, a piezoelectric layer disposed between the first and second electrodes, and a single mirror pair disposed adjacent the second electrode. In one example, the hybrid bulk acoustic wave resonator further comprises a substrate, and the first electrode is disposed adjacent the substrate. A method of fabricating a hybrid BAW resonator is also disclosed. | 05-26-2011 |
| 20110148547 | PIEZOELECTRIC RESONATOR STRUCTURE - A piezoelectric resonator structure, comprising: (i) a substrate, (ii) an acoustic mirror, (iii) a first electrode, (iv) a piezoelectric layer, and (v) a second electrode, wherein each of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer, and the second electrode has a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A. A plurality of air gaps and interference structures is formed at the first end portion of the piezoelectric layer and the second electrode, and the second end portion of the piezoelectric layer and the second electrode to enhance the performance of the piezoelectric resonator. | 06-23-2011 |
| 20110204995 | ACOUSTICALLY COUPLED RESONATOR FILTER WITH IMPEDANCE TRANSFORMATION RATIO CONTROLLED BY RESONANT FREQUENCY DIFFERENCE BETWEEN TWO COUPLED RESONATORS - A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other. | 08-25-2011 |
| 20110298564 | Thin-Film Piezoelectric Resonator and Thin-Film Piezoelectric Filter Using the Same - A thin-film piezoelectric resonator including a substrate ( | 12-08-2011 |
| 20110304412 | Acoustic Wave Resonators and Methods of Manufacturing Same - In one aspect of the invention, the acoustic wave resonator includes a substrate defined an air cavity, a first passivation layer formed on the substrate and over the air cavity, a seed layer formed on the passivation layer, a bottom electrode formed on the seed layer, a piezoelectric layer formed on the bottom electrode, a top electrode formed on the piezoelectric layer, and a second passivation layer formed on the top electrode. | 12-15-2011 |
| 20120038435 | ELASTIC WAVE APPARATUS - In an elastic wave apparatus, a first dielectric layer is laminated on a piezoelectric substrate. An electrode structure is provided at an interface between the first dielectric layer and the piezoelectric substrate. The electrode structure includes a first electrode structure of an elastic wave filter and a second electrode structure of elastic wave resonators. The elastic wave resonators are electrically connected to the elastic wave filter. An anti-resonant frequency at which the extreme impedance values of the elastic wave resonators are obtained is in a frequency band in which the higher-order mode spurious response of the elastic wave filter appears. | 02-16-2012 |
| 20120056694 | COMPOSITE BULK ACOUSTIC WAVE RESONATOR - In one aspect of the invention, the acoustic wave resonator includes a resonator structure having a first electrode, a piezoelectric layer formed on the first electrode, and a second electrode formed on the piezoelectric layer, and a composite layered structure associated with the resonator structure such that the immunity of the acoustic wave resonator to environmental change and aging effects is improved, the trimming sensitivity is substantially minimized, and/or dispersion characteristics of the acoustic wave resonator is optimized. | 03-08-2012 |
| 20120081195 | LATERAL OVER-MODED BULK ACOUSTIC RESONATORS - A bulk acoustic resonator assembly and methods for fabricated the resonator assembly is provided. The resonator includes a cavity on a first surface of a substrate, with a sheet of low acoustic loss material suspended over the cavity. The sheet of low acoustic loss material is configured such that an associated fundamental frequency of the sheet of low acoustic loss material is a function of a length of the sheet of low acoustic loss material in a direction parallel to the first surface of the substrate. A transducer includes an electromechanical layer on the sheet of low acoustic loss material and a patterned conductive material formed on the electromechanical material. The transducer is configured to induce vibrations in the low acoustic loss material upon application of an electrical signal to the conductive pattern. | 04-05-2012 |
| 20120086522 | BULK ACOUSTIC WAVE RESONATOR AND BULK ACOUSTIC WAVE FILTER AND METHOD OF FABRICATING BULK ACOUSTIC WAVE RESONATOR - A bulk acoustic wave (BAW) resonator includes a substrate, and two electrodes stacked on the substrate, and at least one piezoelectric layer interposed between the two electrodes. The two electrodes and the piezoelectric layer are at least partially overlapped with each other in a vertical projection direction, and one of the two electrodes has a plurality of openings. | 04-12-2012 |
| 20120086523 | Method of manufacturing laterally coupled BAW thin films - The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation. | 04-12-2012 |
| 20120119848 | SUPERLATTICE CRYSTAL RESONATOR AND ITS USAGE AS SUPERLATTICE CRYSTAL FILTER - A superlattice crystal resonator having a substrate of a dielectric acoustic superlattice material, both sides of which substrate are plated with electrodes. The resonator can be a one-port resonator if the electrode on both sides is a single electrode, or it can be a two-port resonator if the electrode on one side is a single electrode and the electrode on the other side is a bipolar electrode. The superlattice crystal resonator can be used as a superlattice crystal filter, either in the form of a monolithic superlattice crystal filter formed by a two-port superlattice crystal filter, or in the form of a combined superlattice crystal filter where a number of one-port superlattice crystal resonators are interconnected in various circuitry configurations with or without other electronic components, such as capacitors, inductors, and resisters. | 05-17-2012 |
| 20120154074 | RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE COMPENSATING LAYER - An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer. | 06-21-2012 |
| 20120161902 | SOLID MOUNT BULK ACOUSTIC WAVE RESONATOR STRUCTURE COMPRISING A BRIDGE - A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer, An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode. | 06-28-2012 |
| 20120182090 | ACOUSTIC WAVE RESONATOR - In one aspect of the invention, an acoustic wave device includes a substrate, an acoustic isolator formed in or on the substrate, a bottom electrode formed on the acoustic isolator, a piezoelectric layer formed on the bottom electrode, a top electrode formed on the piezoelectric layer, and boundary means such as a gasket surrounding one of the first and second electrodes whose perimeter is aligned inside the perimeter of the acoustic isolator. The gasket has a lateral side having a wall profile, a curve profile, a multi-step profile, a gradually variable profile, or a combination of them. | 07-19-2012 |
| 20120194297 | ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 08-02-2012 |
| 20120218055 | STACKED ACOUSTIC RESONATOR COMPRISING A BRIDGE - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode. | 08-30-2012 |
| 20120256705 | DEVICE USING A FILTER WITH RESONATORS - A filter device including an input electronic circuit having an input load admittance Yin, an output electronic circuit having an output load admittance Yout, a lattice filter with two types of two piezoelectric resonators having a characteristic impedance Zc; those of the first type have a resonant frequency Fri and an antiresonant frequency Fa1; those of the second type have a resonant frequency Fr2 different from Fr1 and an antiresonant frequency Fa2 different from Fa1. The input and output impedances are matched to the reciprocal of the real part Re{Yin} of the admittance Yin and the reciprocal of the real part Re{Yout} of the admittance Yout, which are at least two to five times greater than the characteristic impedance Zc of the resonators. The frequency differences Fa1−Fr1 and Fa2−Fr2 are at least two to three times greater than the absolute value of the difference Fr1−Fr2. | 10-11-2012 |
| 20120256706 | PIEZOELECTRIC THIN FILM RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION DEVICE - A piezoelectric thin film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. At least a portion of the upper electrode and that of the lower electrode oppose each other through the piezoelectric film, and at least a portion of the periphery of the upper electrode is reversely tapered. | 10-11-2012 |
| 20130033339 | BIFURCATION-BASED ACOUSTIC SWITCH AND RECTIFIER - A tunable frequency acoustic rectifier that is a granular crystal composed of a statically compressed one-dimensional array of particles in contact, containing a light mass defect near a boundary. The tunable frequency acoustic rectifier is nonlinear and contains tunable pass and stop bands in their dispersion relation. Vibrations at selected frequencies applied to the granular crystal from the side near the defect will cause the system to bifurcate at a critical input amplitude and subsequently jump to quasiperiodic and chaotic states with broadband frequency content. Some of this frequency content lies within the pass bands and will propagate through the crystal. Vibrations at the same frequencies applied to the other side of the granular crystal will not bifurcate, and little energy is transmitted. | 02-07-2013 |
| 20130038408 | BULK ACOUSTIC WAVE RESONATOR DEVICE COMPRISING AN ACOUSTIC REFLECTOR AND A BRIDGE - A bulk acoustic wave (BAW) resonator device includes an acoustic reflector formed over a substrate and a resonator stack formed over the acoustic reflector. The acoustic reflector includes multiple acoustic impedance layers. The resonator stack includes a first electrode formed over the acoustic reflector, a piezoelectric layer formed over the first electrode, and a second electrode formed over the piezoelectric layer. A bridge is formed within one of the acoustic reflector and the resonator stack. | 02-14-2013 |
| 20130049888 | ACOUSTIC RESONATOR FORMED ON A PEDESTAL - An acoustic resonator structure comprises a substrate having a trench, a conductive pattern formed in the trench, a pillar formed within the trench, and an acoustic resonator supported at a central location by the pillar and suspended over the trench. | 02-28-2013 |
| 20130057360 | WIDE-BAND ACOUSTICALLY COUPLED THIN-FILM BAW FILTER - In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE | 03-07-2013 |
| 20130063226 | DOUBLE FILM BULK ACOUSTIC RESONATOR HAVING ELECTRODE EDGE ALIGNMENTS PROVIDING IMPROVED QUALITY FACTOR OR ELECTROMECHANICAL COUPLING COEFFICIENT - An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode. | 03-14-2013 |
| 20130063227 | ACCOUSTIC RESONATOR HAVING MULTIPLE LATERAL FEATURES - A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures. | 03-14-2013 |
| 20130106534 | PLANARIZED ELECTRODE FOR IMPROVED PERFORMANCE IN BULK ACOUSTIC RESONATORS | 05-02-2013 |
| 20130120081 | COMBINED RESONATORS AND PASSIVE CIRCUIT COMPONENTS FOR FILTER PASSBAND FLATTENING - This disclosure provides implementations of electromechanical systems combined resonator and passive circuit components. In one aspect, passband flattened filter apparatus includes a resonator structure and input and output passband flattening components. The resonator structure has a first input, a second input coupled to a ground terminal, a first output, and a second output coupled to the ground terminal. The input passband flattening component includes a first inductor having an output coupled to the first input of the resonator structure, and a second inductor having an input coupled to the first input of the resonator structure and an output coupled to the ground terminal. The output passband flattening component includes a first inductor having an input coupled to the first output of the resonator structure, and a second inductor having an input coupled to the first output of the resonator structure and an output coupled to the ground terminal. | 05-16-2013 |
| 20130127568 | DIELECTRIC CERAMIC AND DIELECTRIC FILTER UTILIZING SAME - A dielectric ceramic includes a main crystal phase containing Ba, Nd and Ti; and a remainder, part of Ti contained in the main crystal phase being substituted with Al, a content of the Al contained in the main crystal phase to a total content of Al in the main crystal phase and the remainder being greater than or equal to 10% on Al | 05-23-2013 |
| 20130176085 | HYBRID BULK ACOUSTIC WAVE RESONATOR - A hybrid bulk acoustic wave (BAW) resonator comprises a first electrode, a second. electrode, a piezoelectric layer disposed between the first and second electrodes, and a single mirror pair disposed adjacent the second electrode. In one example, the hybrid bulk acoustic wave resonator further comprises a substrate, and the first electrode is disposed adjacent the substrate. A method of fabricating a hybrid BAW resonator is also disclosed. | 07-11-2013 |
| 20130214877 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes. | 08-22-2013 |
| 20130214878 | Acoustic Wave Bandpass Filter Comprising Integrated Acoustic Guiding - An acoustic wave bandpass filter comprises at least an input first acoustic wave resonator with an output surface, and an output second acoustic wave resonator with an input surface, said resonators being coupled to each other along a set direction, the input and output surfaces being substantially opposite, and at least one first phononic crystal structure between said input and output resonators and/or a second phonic crystal structure at the periphery of said resonators so as to guide the acoustic waves, generated by said input resonator, toward said output resonator along said set direction, the resonators ensuring an impedance conversion and/or a mode conversion. | 08-22-2013 |
| 20130249648 | HBAR Resonator Comprising A Structure For Amplifying The Amplitude Of At Least One Resonance Of Said Resonator And Methods For Producing Such A Resonator - An HBAR resonator comprises, on a substrate, a piezoelectric transducer, said transducer comprising at least one piezoelectric layer, at least two series of electrodes and exhibiting resonance frequencies Fi corresponding to wavelengths λi, characterized in that it comprises an amplification structure comprising at least one resonant cavity arranged on the substrate between said transducer and said substrate or in said substrate, this amplification structure being suitable for mechanically resonating at least one of the resonance frequencies Fi of said transducer corresponding to said wavelength λi, so as to amplify the amplitude of the electrical resonance generated at said frequency. | 09-26-2013 |
| 20130249649 | BULK ACOUSTIC WAVE RESONATOR - A bulk acoustic wave resonator includes a substrate, a resonator section in which a piezoelectric film is sandwiched between a pair of electrodes, and a vibration region where the electrodes overlap when viewed in a film thickness direction is defined, an elastically deformable support section that connects the substrate and the resonator section, a membrane arranged between the resonator section and the substrate to face the vibration region of the resonator section and be fixed on the substrate with a space in between, and driver sections that are defined in the resonator section and the substrate adjacent to the vibration region and the membrane, and that move the resonator section toward and away from the substrate. The vibration region of the resonator section contacts the membrane when the driver sections move the resonator section close to the substrate. | 09-26-2013 |
| 20130278356 | WIDE-BAND ACOUSTICALLY COUPLED THIN-FILM BAW FILTER - The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode. | 10-24-2013 |
| 20130300521 | Piezoelectric Resonator - According to embodiments of the present invention, a piezoelectric resonator is provided. The piezoelectric resonator includes a piezoelectric substrate, a first electrode comprising a first plurality of electrode fingers, a second electrode comprising a second plurality of electrode fingers, wherein the first plurality of electrode fingers and the second plurality of electrode fingers are interdigitated, and wherein electrode patches are arranged along the first plurality of electrode fingers and the second plurality of electrode fingers according to a 2-dimensional lattice. | 11-14-2013 |
| 20130314177 | ACOUSTIC RESONATOR COMPRISING COLLAR, FRAME AND PERIMETER DISTRIBUTED BRAGG REFLECTOR - An acoustic resonator includes a bottom electrode disposed over a substrate, a piezoelectric layer disposed over the bottom electrode, a top electrode disposed over the piezoelectric layer, and a cavity disposed beneath the bottom electrode. An overlap of the bottom electrode, the piezoelectric layer and the top electrode defines a main membrane region of the acoustic resonator structure. The acoustic resonator further includes an acoustic reflector disposed over the substrate adjacent to the cavity, the acoustic reflector including a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. | 11-28-2013 |
| 20130321100 | LATERALLY-COUPLED ACOUSTIC RESONATORS - An apparatus, comprises a piezoelectric layer, a first acoustic resonator comprising first and second electrodes formed on opposite sides of the piezoelectric layer, and a second acoustic resonator comprising first and second electrodes formed on opposite sides of the piezoelectric layer and acoustically coupled to the first acoustic resonator. | 12-05-2013 |
| 20130335169 | Optimal Acoustic Impedance Materials for Polished Substrate Coating to Suppress Passband Ripple in BAW Resonators and Filters - A bulk acoustic wave (BAW) resonator is constructed to reduce phase and amplitude ripples in a frequency response. The BAW resonator is fabricated on a substrate 400 μm thick or less, preferably approximately 325 μm, having a first side and a polished second side with a peak-to-peak roughness of approximately 1000 A. A Bragg mirror having alternate layers of a high acoustic impedance material, such as tungsten, and a low acoustic impedance material is fabricated on the first side of the substrate. A BAW resonator is fabricated on the Bragg mirror. A lossy material, such as epoxy, coats the second side of the substrate opposite the first side. The lossy material has an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high acoustic impedance material. | 12-19-2013 |
| 20130342284 | BULK ACOUSTIC WAVE STRUCTURE WITH ALUMINUM COPPER NITRIDE PIEZOELECTRIC LAYER AND RELATED METHOD - According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer. | 12-26-2013 |
| 20140015624 | ACOUSTIC WAVE ELEMENT AND ACOUSTIC WAVE DEVICE USING SAME - The IDT electrode has the first bus bar and second bus bar; the plurality of first electrode fingers and the plurality of second electrode fingers mutually intersect; the plurality of first dummy electrodes and the plurality of second dummy electrodes which extend have front ends facing front ends of the plurality of first electrode fingers and the plurality of second electrode fingers with the gap s1; the plurality of first auxiliary electrodes which protrude laterally from the front end side portions of the pluralities of first dummy electrodes; and the plurality of second auxiliary electrodes which protrude laterally from the front end side portions of the plurality of second dummy electrodes. The plurality of first auxiliary electrodes have edge portions located a side of the second bus bar. The edge portions are located a side of the second bus bar the more to a side of the front end. | 01-16-2014 |
| 20140049341 | MULTIMODE ELASTIC WAVE DEVICE - A multimode elastic wave device includes a pair of reflectors, and a first interdigital transducer (IDT) electrode through a fifth IDT electrode arranged between the pair of reflectors. In this configuration, each of the average of electrode-finger pitches in the first IDT electrode and the average of electrode-finger pitches in the fifth IDT electrode is smaller than both of the average of electrode-finger pitches in the second IDT electrode and the average of electrode-finger pitches in the fourth IDT electrode. | 02-20-2014 |
| 20140077898 | Novel micromechanical devices - The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift. | 03-20-2014 |
| 20140097914 | BULK ACOUSTIC WAVE RESONATOR WITH MEANS FOR SUPPRESSION OF PASS-BAND RIPPLE IN BULK ACOUSTIC WAVE FILTERS - A bulk acoustic wave resonator comprising a substrate, a Bragg reflector, a top and a bottom electrode and a piezoelectric layer with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate, an absorbing layer disposed on the rear side of the substrate and/or an absorbing layer disposed on the front side of the substrate. | 04-10-2014 |
| 20140111288 | ACOUSTIC RESONATOR HAVING GUARD RING - A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a guard ring structure formed around a perimeter of an active region corresponding to an overlap of the first electrode, the first piezoelectric layer, and the second electrode. | 04-24-2014 |
| 20140118088 | ACCOUSTIC RESONATOR HAVING COMPOSITE ELECTRODES WITH INTEGRATED LATERAL FEATURES - A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch. | 05-01-2014 |
| 20140118089 | BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER WITH IMPROVED PIEZOELECTRIC CHARACTERISTICS - A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yittrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer. | 05-01-2014 |
| 20140118090 | BULK ACOUSTIC WAVE RESONATOR HAVING PIEZOELECTRIC LAYER WITH MULTIPLE DOPANTS - A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer. | 05-01-2014 |
| 20140118091 | ACOUSTIC RESONATOR HAVING COLLAR STRUCTURE - A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer. | 05-01-2014 |
| 20140118092 | ACCOUSTIC RESONATOR HAVING INTEGRATED LATERAL FEATURE AND TEMPERATURE COMPENSATION FEATURE - A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic mirror, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. At least one of the bottom electrode and the top electrode includes an integrated lateral feature configured to create at least one of a cut-off frequency mismatch and an acoustic impedance mismatch. | 05-01-2014 |
| 20140118093 | ELECTRONIC COMPONENT MODULE - An electronic component module includes: a multi-layered wiring board formed by stacking insulating layers, an inner wiring layer formed between the insulating layers, and a surface wiring layer formed on an outermost insulating layer of the insulating layers; and an acoustic wave device located inside the multi-layered wiring board, wherein the acoustic wave device includes a functional element and a sealing portion, the functional element being located on a substrate and exciting an acoustic wave, and the sealing portion sealing the functional element so as to form an air-space above the functional element, and a terminal portion of the surface wiring layer does not overlap the air-space of the acoustic wave device as viewed from a stacking direction of the multi-layered wiring board, the terminal portion being a region to which a terminal of an electronic component is fixed in the surface wiring layer. | 05-01-2014 |
| 20140176261 | ACOUSTIC RESONATOR DEVICE WITH AT LEAST ONE AIR-RING AND FRAME - An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer, where an overlap between the top electrode, the piezoelectric layer and the bottom electrode over the air cavity defines a main membrane region. The acoustic resonator device further includes at least one air-ring defining a boundary of the main membrane region, and at least one first frame formed between the bottom electrode and the piezoelectric layer or formed between the substrate and the bottom electrode, and a second frame formed between the piezoelectric layer and the top electrode. | 06-26-2014 |
| 20140184358 | BAW-FILTER OPERATING USING BULK ACOUSTIC WAVES - The present invention relates to a BAW filter operating with bulk acoustic waves, which has a multilayer construction, wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance (L | 07-03-2014 |
| 20140203893 | ELASTIC WAVE DEVICE - An elastic wave device includes a medium layer, a piezoelectric body, and an IDT electrode that are disposed on a supporting substrate. The medium layer is made of a medium containing a low-velocity medium in which a propagation velocity of a same bulk wave as that which is a main vibration component of an elastic wave propagating in the piezoelectric body and being used is lower than a propagation velocity of the elastic wave, and a high-velocity medium in which the propagation velocity of the same bulk wave as that which is a main vibration component of the elastic wave is higher than the propagation velocity of the elastic wave. | 07-24-2014 |
| 20140232486 | ACOUSTIC RESONATOR COMPRISING ACOUSTIC REFLECTOR, FRAME AND COLLAR - A solidly mounted resonator (SMR) device includes an acoustic reflector having stacked acoustic reflector layer pairs, each of which includes a low acoustic impedance layer formed of low acoustic impedance material stacked on a high acoustic impedance layer formed of high acoustic impedance material. The SMR device further includes a bottom electrode disposed on the acoustic reflector, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. A collar is formed outside a main active region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode, and at least one frame is disposed within the main active region. The collar has an inner edge substantially aligned with a boundary of or overlapping the main active region, and the at least one frame has an outer edge substantially aligned with the boundary of the main active region. | 08-21-2014 |
| 20140312993 | METHOD OF FABRICATING MULTI-BAND FILER MODULE - A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed. | 10-23-2014 |
| 20140312994 | Laterally coupled bulk acoustic wave filter with improved passband characteristics - The invention relates to a laterally coupled bulk acoustic wave (LBAW) filter comprising a vibration layer for carrying bulk acoustic waves, electrode means comprising a first electrode coupled to the vibration layer for exciting to the vibration layer at least one longitudinal wave mode having a first frequency band and one shear wave mode having a second frequency band, and a second electrode coupled to the vibration layer for sensing the filter pass signal, the first and second electrodes being laterally arranged with respect to each other, and an acoustic reflector structure in acoustic connection with the vibration layer. According to the invention, the reflector structure is adapted to acoustically isolate the vibration layer from its surroundings at the first frequency band more efficiently than at the second frequency band for suppressing the effect of the shear wave mode at the second frequency band from the filter pass signal. The invention helps to improve the quality of LBAW filter passbands. | 10-23-2014 |
| 20140340172 | BULK ACOUSTIC WAVE RESONATOR COMPRISING A BORON NITRIDE PIEZOELECTRIC LAYER - A bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN); and a second electrode disposed over the first piezoelectric layer. | 11-20-2014 |
| 20150084719 | Bulk Wave Resonator - A bulk wave resonator that includes an aluminum nitride film containing scandium on a substrate, a first electrode disposed on one surface of the aluminum nitride film containing scandium, and a second electrode disposed on the other surface of the aluminum nitride film containing scandium. The aluminum nitride film containing scandium includes a portion acoustically isolated from a top surface of the substrate. The first electrode overlaps the second electrode with the aluminum nitride film containing scandium interposed therebetween. The overlap forms a piezoelectric vibrating portion. The scandium content of the aluminum nitride film containing scandium is 5 atomic percent or more and 43 atomic percent or less when Sc and Al of the aluminum nitride film containing scandium constitute 100 atomic percent. | 03-26-2015 |
| 20150318837 | ACOUSTIC RESONATOR DEVICE WITH AIR-RING AND TEMPERATURE COMPENSATING LAYER - A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length. | 11-05-2015 |
| 20150349747 | CAPACITIVE COUPLED RESONATOR DEVICE WITH AIR-GAP SEPARATING ELECTRODE AND PIEZOELECTRIC LAYER - A bulk acoustic wave (BAW) resonator includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed over the bottom electrode, and a top electrode disposed over the piezoelectric layer. The BAW resonator further includes at least one air-gap and corresponding support structure, where the at least one air-gap separates at least one of the bottom electrode and the top electrode from the piezoelectric layer, respectively. | 12-03-2015 |
| 20150357987 | INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES - A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 10 | 12-10-2015 |
| 20160065171 | FILM BULK ACOUSTIC RESONATORS COMPRISING BACKSIDE VIAS - An film bulk acoustic wave resonator (FBAR) structure has an FBAR and a via disposed substantially directly beneath the FBAR. The via is in thermal contact with the FBAR. A plurality of vias may be included. The via(s) serve to dissipate heat generated by the FBAR structure during operation. | 03-03-2016 |
| 20160079956 | ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING THE SAME - There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured. | 03-17-2016 |
| 20160118957 | BULK ACOUSTIC RESONATOR DEVICE INCLUDING TEMPERATURE COMPENSATION STRUCTURE COMPRISING LOW ACOUSTIC IMPEDANCE LAYER - An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate. | 04-28-2016 |
| 20160118958 | ACOUSTIC RESONATOR DEVICE WITH STRUCTURES HAVING DIFFERENT APODIZED SHAPES - An acoustic resonator device includes a bottom electrode disposed on a substrate over an acoustic reflecting feature, a piezoelectric layer disposed on the bottom electrode and a top electrode disposed on the piezoelectric layer, where an overlap between the top electrode, the piezoelectric layer and the bottom electrode over the acoustic reflecting feature define an active region of the acoustic resonator device. The acoustic resonator device further includes at least one of a wing having an outer edge extending beyond at least a portion of an outer edge of the top electrode, and a first frame formed in one of an outer region or a center region of the top electrode. The at least one of the wing and the first frame has an apodized shape, such that no edges are parallel to one another, the apodized shape of the at least one of the wing and the first frame being different from an electrode shape defined by an outer edge of the top electrode. | 04-28-2016 |
| 20160126930 | BULK ACOUSTIC WAVE RESONATOR COMPRISING A RING - An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer; a passivation layer disposed over the second electrode and a ring disposed between the substrate and the passivation layer | 05-05-2016 |
| 20160164488 | BULK ACOUSTIC WAVE RESONATOR - A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap. | 06-09-2016 |
| 20160172573 | LATERALLY COUPLED MULTI-MODE MONOLITHIC FILTER | 06-16-2016 |
| 20160204761 | ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING THE SAME | 07-14-2016 |
| 20170237410 | ACOUSTIC WAVE FILTER DEVICE, PACKAGE TO MANUFACTURE ACOUSTIC WAVE FILTER DEVICE, AND METHOD TO MANUFACTURE ACOUSTIC WAVE FILTER DEVICE | 08-17-2017 |
| 20170237411 | ACOUSTIC WAVE FILTER AND METHOD FOR MANUFACTURING THE SAME | 08-17-2017 |
| 20220140803 | BULK ACOUSTIC WAVE (BAW) RESONATOR WITH PATTERNED LAYER STRUCTURES, DEVICES AND SYSTEMS - Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer. | 05-05-2022 |
| 20220140805 | TEMPERATURE COMPENSATING BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES AND SYSTEMS - Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided. | 05-05-2022 |
| 20220140812 | MULTI MIRROR STACK - In certain aspects, a chip includes an acoustic resonator, and a mirror under the acoustic resonator. The mirror includes a first plurality of porous silicon layers, and a second plurality of porous silicon layers, wherein the mirror alternates between the first plurality of porous silicon layers and the second plurality of porous silicon layers, and each of the first plurality of porous silicon layers has a higher porosity than each of the second plurality of porous silicon layers. | 05-05-2022 |
