| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 333141000 | Delay lines including elastic bulk wave propagation means | 8 |
| 20130162369 | THIN-FILM BULK ACOUSTIC WAVE DELAY LINE - A thin-film bulk acoustic wave delay line device providing true-time delays and a method of fabricating same. An exemplary device can comprise several thin-film layers including thin-film transducer layers, thin-film delay layers, and stacks of additional thin-film materials providing acoustic reflectors and matching networks. The layer material selection and layer thicknesses can be controlled to improve impedance matching between transducers and the various delay line materials. For example, the transducer layers and delay layers can comprise piezoelectric and amorphous forms of the same material. The layers can be deposited on a carrier substrate using standard techniques. The device can be configured so that mechanical waves propagate solely within the thin films, providing a substrate-independent device. The device, so constructed, can be of a small size, e.g. 40 μm per side, and capable of handling high power levels, potentially up to 20 dBm, with low insertion loss of approximately 3 dB. | 06-27-2013 |
| 20130249644 | PHASE SHIFTER USING BULK ACOUSTIC WAVE RESONATOR - A phase shifter using a Bulk Acoustic Wave Resonators (BAWR) is provided. The phase shifter using a BAWR may use a property of a phase shift with respect to a frequency of the BAWR, and also use at least one capacitor, at least one inductor, and the like. | 09-26-2013 |
| 20140125428 | SWITCHING DEVICE AND MODULE - A switching device includes: a switch that selects and connects one of input-output terminals to a common terminal; and a delay line that is connected in parallel to the switch between two terminals of the input-output terminals and delays a signal by using an acoustic wave. | 05-08-2014 |
| 333144000 | Variable delay | 1 |
| 20130335166 | DEVICES HAVING A TUNABLE ACOUSTIC PATH LENGTH AND METHODS FOR MAKING SAME - A tunable acoustic resonator device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different and, consequently, the different levels of applied stress are used to tune the acoustic resonator device. Compared with the tunable resonator device consisting of only tunable crystal medium, a device having both the piezoelectric and tunable crystal medium has advantages such as larger inherent bandwidth and less nonlinearity with AC signals. The device also requires a smaller applied stress (i.e. bias voltage) to achieve the required frequency tuning. | 12-19-2013 |
| 333147000 | Propagation path has significant chemical or physical properties | 4 |
| 20080231392 | Method of Generating Strong Spin Waves and Spin Devices for Ultra-High Speed Information Processing Using Spin Waves - Provided are a method of generating strong spin waves, a method of simultaneously generating spin waves and electromagnetic waves, a logic operation device using spin waves, a variety of spin wave devices employing the same, and a method of controlling phases of spin waves. In the method of generating spin waves, strong spin waves are generated by supplying various shapes of energies to a magnetic material in which a magnetic vortex and magnetic antivortex spin structures exist separately or together. When energies are applied to a patterned magnetic material so that magnetic vortex or magnetic antivortex can be generated, a strong torque is generated in a vortex core so that strong spin waves can be generated from the vortex core. The spin waves generated in this way have large amplitudes, short wavelengths, and high frequencies. In the logic operation device using spin waves and the spin wave devices employing the same, wave factors of frequency, wavelength, amplitude, and phase of a spin wave generated by the method of generating spin waves are controlled and wave characteristics such as reflection, refraction, transmission, tunneling, superposition, interference, and diffraction are used. According to the present invention, logic operation spin wave devices capable of performing ultra-high speed information processing and various shapes of optical devices using waves in optics can be reconstructed using spin waves. | 09-25-2008 |
| 20080266024 | Component Operated by Guided Acoustic Waves - A component working with guided acoustic waves includes a layer system configured to guide waves in a lateral plane. The layer system includes a piezoelectric layer, electrodes on the piezoelectric layer for exciting the wave, a dielectric layer with an acoustic impedance, and an adjustment layer with an acoustic impedance. A ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 1.5. | 10-30-2008 |
| 20130082798 | MAGNETIZATION SWITCHING THROUGH MAGNONIC SPIN TRANSFER TORQUE - The subject application describes systems and methods that drive magnetization switching through magnonic spin transfer torque. A spin current is provided to a first magnetic layer with a first magnetic state. The spin current facilitates magnetization switching via a magnonic spin transfer torque in a second magnetic layer with a second magnetic state that is separated from the first magnetic layer by an interface. Alternatively, a spin current is provided to a first magnetic domain with a first magnetic state. The spin current facilitates domain wall propagation via a magnonic spin transfer torque. The domain wall is between the first magnetic domain and a second magnetic domain in a second magnetic state. | 04-04-2013 |
| 20130147579 | SPIN-WAVE WAVEGUIDE AND SPIN WAVE OPERATION CIRCUIT - A spin-wave waveguide includes a ferromagnetic thin film resembling a wire in shape. A part of the ferromagnetic thin film, large in film thickness, is formed at one end of the ferromagnetic thin film, and a part of the ferromagnetic thin film, small in film thickness, and a part of the ferromagnetic thin film, large in film thickness, are alternately formed on the same plane, for at least not less than one cycle. A part of the ferromagnetic thin film, large in film thickness, is formed at the other end of the ferromagnetic thin film, wherein an insulating film, and an electrode film are stacked in this order on the ferromagnetic thin film in the part of the ferromagnetic thin film, large in film thickness. | 06-13-2013 |
