| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 333103000 | Having semiconductor operating means | 62 |
| 20080197936 | Reconfigurable Phase-Shifter - The present invention relates to a phase shifter device arranged for altering the electrical length of a signal path between at least two different values, which device is adapted for guiding a signal through at least one of at least a first signal path, having a first phase and amplitude filter characteristics for varying frequency of the signal, and a second signal path, having a second phase and amplitude filter characteristics for varying frequency of the signal. At least one of said first and second phase and amplitude filter characteristics is realized by means of an all-pass filter. | 08-21-2008 |
| 20080218292 | Low voltage data transmitting circuit and associated methods - A low voltage data transmitting circuit (LVDTC) may be connected to a first transmission line that transmits a first voltage signal to a receiver and a second transmission line that transmits a second voltage signal to the receiver. The LVDTC includes a first resistor coupled to the first transmission line, a second resistor coupled to the second transmission line, and a control unit coupled to the first transmission line and the second transmission line, the control unit being configured to control voltage levels of the first and second voltage signals such that the voltage levels of the first and second voltage signals are higher than a ground voltage level of the receiver, wherein the first and second voltage signals may constitute a differential pair. | 09-11-2008 |
| 20080238570 | Spst Switch, Spdt Switch and Mpmt Switch - A single pole single throw switch for controlling propagation of a high frequency signal between an input terminal ( | 10-02-2008 |
| 20080246554 | SEMICONDUCTOR DEVICES AND METHODS FOR INSPECTING THE SAME - A method for inspecting a semiconductor device includes establishing a first circuit state in which electrical conduction through at least one of branch transmission line portions is established and electrical conduction through at least one other branch transmission line portion is prevented. Then, electrical signal reflection characteristics of the transmission line are measured. The method also includes establishing a second circuit state in which electrical conduction through the at least one of the branch transmission line portions is prevented and electrical conduction through the at least one other branch transmission line portions is established. Then, the electrical signal reflection characteristics of the transmission line are measured. The second circuit state is a mirror image of the first circuit state with respect to the primary transmission line. The measured values are compared. | 10-09-2008 |
| 20080278261 | MILLIMETER-BAND SWITCHING CIRCUIT - A millimeter-band switching circuit easily corrects a varied off capacitance of a switching element without shifting position of the switching element. The millimeter-band switching circuit includes: a coupling line having a line length that can be changed; a first input and output terminal; a second input and output terminal; a first transmission line connected between the first input and output terminal and a first end of the coupling line; a second transmission line connected between the input and output terminal and a second end of the coupling line; a first field effect transistor (FET) connected in parallel with the first transmission line; and a second FET connected in parallel with the second transmission line and turned ON/OFF simultaneously with turning ON/OFF of the first FET. | 11-13-2008 |
| 20080290962 | Radio frequency switch - An RF switch is provided. In the RF switch, a T-junction slot line has a horizontal slot line and a vertical slot line. An open-end circuit is provided at each end portion of the horizontal and vertical slot lines. A first transmission line delivers signals from and to one portion of the horizontal slot line, and a second transmission line delivers signals from and to the other portion of the horizontal slot line. A third transmission line delivers signals from and to the vertical slot line. A switching circuit selectively switches the signal path of the one or the other portion of the horizontal slot line to the vertical slot line according to an external switching control signal. | 11-27-2008 |
| 20080290963 | Radio frequency switch - An RF switch is provided. In the RF switch, a slot line is divided into a first slot line and a second slot line and an open-end circuit is provided at each end portion of the first and second slot lines. A first transmission line delivers signals from and to the first slot line, and a second transmission line delivers signals from and to the second slot line. A third transmission line delivers signals from and to the portion of the slot line that separates the first slot line from the second slot line. A variable sub open-end circuit portion includes at least one open-end circuit which is selectively switched to the first or second slot line according to an external switching control signal. | 11-27-2008 |
| 20090015347 | Switching device with selectable phase shifting modes for reduced intermodulation distortion - According to one exemplary embodiment, a switching device with phase selection terminals to select between at least two phase shifting modes to reduce intermodulation distortion in the switching device includes a first phase selection terminal to select a first phase shifting mode of the switching device by enabling a first transmission line in a first phase shifting switching branch coupled to an input of the switching device. The switching device further includes a second phase selection terminal to select a second phase shifting mode of the switching device by enabling a second phase shifting switching branch coupled to the switching device input. The intermodulation distortion in the switching device is reduced by selecting one of the first and second phase shifting modes. The first transmission line is enabled by enabling a FET coupled in series with the first transmission line in the first phase shifting switching branch. | 01-15-2009 |
| 20090027138 | Switch Circuit - A switch circuit including: a plurality of MEMS switches connected in parallel or in series, which have different drive voltages; and a single voltage supply for driving the plurality of MEMS switches by the plurality of drive voltages, is used for a microwave circuit or an antenna circuit, to vary a configuration of the microwave circuit or the antenna circuit based on the drive voltage value. That is, the configuration of the microwave circuit or the antenna circuit can be varied based on the drive voltage value by using the switch circuit including the MEMS switches having the different drive voltages for the microwave circuit or the antenna circuit. | 01-29-2009 |
| 20090033435 | SWITCHING CIRCUIT - Disclosed is a switch circuit capable of reducing distortion caused by harmonics and preventing an increase in insertion loss even if the number of ports increases. The switching circuit includes one common output port, M first switches having one set of ends connected in common to a first node (M≧2 where M is a constant), N second switches having one set of ends connected in common to the common output port (N≧1 where N is a constant), a third switch having one end connected to the common output port and the other end connected to the first node, M first input ports respectively connected to the other set of ends of the first switches, and N second input ports respectively connected to the other set of ends of the second switches. One selected among the first input ports and the second input ports is connected to the common output port, and if one of the first input ports is selected, the third switch is closed. | 02-05-2009 |
| 20090085690 | SWITCHING DEVICE, AND TESTING APPARATUS - Provided is a switching apparatus connecting a transmission line designated among transmission lines, between input and output terminals, and preventing a signal at the terminal from leaking to a control wiring, becoming a noise, and being superposed onto a signal at the other end. The switching apparatus includes: a plurality of input series switches switching the connection state between one end of the transmission lines and the input terminal according to a control signal; a plurality of output series switches switching the connection state between the other end of the transmission lines and the output terminal according to a control signal; a plurality of control wirings that supply a control signal to the input series switch and the output series switch; and a noise removal section that is provided between the input series switch and the output series switch and that reduces a noise propagated via a control wiring. | 04-02-2009 |
| 20090121804 | MONOLITHIC SEMICONDUCTOR MICROWAVE SWITCH ARRAY - A microwave switch array includes a plurality of microwave slotlines, each of which is controlled by a semiconductor switch including a first PIN junction formed by a primary P-type electrode and a primary N-type electrode separated by the slotline. The switches inject a plasma into the slotline in response to a potential applied across the first PIN junction. Each of the switches includes a second PIN junction between the primary P-type electrode and a secondary N-type electrode, and a third PIN junction between the primary N-type electrode and a secondary P-type electrode. Metal contacts connect the primary P-type electrode and the secondary N-type electrode across second PIN junction, and the primary N-type electrode and the secondary P-type electrode across the third PIN junction. The secondary electrodes extract plasma that diffuses away from the first PIN junction, thereby minimizing the performance degrading effects of plasma diffusion. | 05-14-2009 |
| 20090153264 | FILTER HAVING SWITCH FUNCTION AND BAND PASS FILTER - The filter has a switch function of selectively transmitting a transmission signal through one of first and second branch waveguides branching from a primary waveguide. The filter includes resonators disposed in the first and second branch waveguides. The resonator includes a space formed inside a metal cover, a central conductor disposed inside the space, and a short-circuiting plate. The central conductor has one end grounded to an outer conductor. The short-circuiting plate allows the neighborhood of an open end of the central conductor to be selectively conducted to the outer conductor. The filter performs a selection from the first and second branch waveguides by switching electrical conductivity in a region between the neighborhood of the open end of the central conductor and the outer conductor. | 06-18-2009 |
| 20090256646 | MILLIMETER WAVEBAND SWITCH - A millimeter waveband switch which enables high isolation without increasing passing loss, includes a first switching element that is connected in series between input and output terminals through which a signal passes; and a first transmission line having an electrical length of ½ wavelength and which is connected in parallel with the first switching element. Alternatively, the millimeter waveband switch may include: a first switching element having a first end connected in parallel to input and output terminals through which a signal passes; a first transmission line having an electrical length of ½ wavelength which is connected in parallel with the first switching element; and a second transmission line having an electrical length of ½ wavelength and which is connected between ground and a second end of the first switching element. | 10-15-2009 |
| 20100013571 | High-power switch - A low-loss Radio Frequency (RF) switch for high-power RF signals. The RF switch includes a first-biasing circuit connected to a first transistor and a second-biasing circuit connected to a second transistor. The RF switch switches its output signal between a first input signal and a second input signal. The first transistor is in a conduction state and the second transistor is in a non-conduction state when the first input signal is to be conducted to the output signal. The first-biasing circuit biases the first transistor at a first voltage for increasing conduction of the first input signal and the second-biasing circuit biases the second transistor at a second voltage for decreasing conduction of the first input signal. Moreover, the second transistor is in a conduction state and the first transistor is in a non-conduction state when the second input signal is to be conducted to the output signal. | 01-21-2010 |
| 20100019861 | RF SWITCH - The present invention provides an RF switch, including a diode adapted to operate as a switch when a control current is applied thereto, a first CRLH transmission line of a Φ degree phase, which provides one signal transfer path from a terminal | 01-28-2010 |
| 20100060377 | SWITCH CIRCUIT AND SEMICONDUCTOR DEVICE - A switch circuit for passing or blocking a high-frequency signal includes a correction circuit for correcting an impedance component that exists in the switch circuit and that changes asymmetrically with the direct-current potential as a reference such that impedance as seen from either high-frequency terminal changes symmetrically with the direct-current potential as a reference in response to positive and negative changes that take the direct-current potential of the high-frequency signal as a reference. | 03-11-2010 |
| 20100097159 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE - There are provided a semiconductor device and a semiconductor chip, in which the interconnection is made to be highly reliable by stacking three or more layers of chips without contact therebetween. A semiconductor chip of the present invention comprises a first signal transmission circuit, a silicon substrate on which a first changeover switch is formed, and an interconnection layer on which a first capacitive-coupling upper electrode is formed, wherein a first capacitive-coupling lower electrode is additionally formed on the rear surface of the silicon substrate through a first via hole that penetrates the silicon substrate and, whereas the first capacitive-coupling upper electrode is directly connected to the first signal transmission circuit, the first capacitive-coupling lower electrode is connected to the first signal transmission circuit through the first via hole and through the first changeover switch. | 04-22-2010 |
| 20100109796 | Multi-Band Transmit-Receive Switch for Wireless Transceiver - A transmit-receive switch has a transmit port, an antenna port, and a receive port. A first switch couples the transmit port to the antenna port when a signal TxON is asserted. A LOW_BAND signal indicates the selection of a lower band of frequencies. A tuning structure is formed by a second and third switch in series which couple the antenna port to ground through a first capacitor when TxON and LOW_BAND are both asserted, and LOW_BAND may be provided to one or more such tuning structures for multi-band frequency operation. A second capacitor couples the antenna port to ground when a fourth switch is enabled. An inductor couples the antenna port to the receive port. A third capacitor is placed across the receive port and ground. A fifth switch is closed when TxON is asserted. The first through fifth switches can be a CMOS FET with an isolated substrate coupled to ground through an associated resistor. | 05-06-2010 |
| 20100171563 | MULTIPLE POLE MULTIPLE THROW SWITCH DEVICE BASED ON COMPOSITE RIGHT AND LEFT HANDED METAMATERIAL STRUCTURES - Techniques, apparatus and systems for a multiple pole multiple throw (MPMT) RF switch device based on composite left and right handed (CRLH) metamaterial structures. | 07-08-2010 |
| 20100188163 | SEMICONDUCTOR DEVICE - In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate. | 07-29-2010 |
| 20100231321 | Programmable microwave integrated circuit - In an integrated circuit a microwave signal is routed through a selected signal path. Routing is accomplished by switching to determine the signal path. Control signals are applied remotely. The microwave integrated circuit is programmable by virtue of the ability to command selection of a signal path. The signal path is chosen to include or avoid selected “RF functional elements,” i.e., components through which radio frequency signals may be routed. RF functional elements may include, for example, amplifiers, mixers, attenuators, and phase shifters. Aspects of programmability in the integrated circuit include the provision of the functional circuit elements for selectable connection in signal paths, the switching and interconnect technologies used to switch and connect between them, and the arrangement of the functional circuit elements in relationship to each other. | 09-16-2010 |
| 20100265004 | Diode Switch Circuit and Switching Circuit - The present invention provides a PIN diode switch circuit capable of sufficiently suppressing the generation of burst noise with each switching operation. The PIN diode switch circuit is switched to a state in which a terminal (X) and a terminal (Z) are connected to each other and a state in which a terminal (Y) and the terminal (Z) are connected to each other, by forward bias and reverse bias of PIN diodes ( | 10-21-2010 |
| 20110090022 | RF SWITCH FOR AN RF SPLITTER - An RF switch for an RF splitter is disclosed, in which the bias voltage for the RF switching elements can be supplied, by means of an RF to DC translator, from the RF signal on the input side to the switch. By means of a native NMOS switch, routing of the RF signal is thus enabled without the necessity for an external power supply. | 04-21-2011 |
| 20110187475 | RADIO FREQUENCY SWITCH CIRCUIT - A radio frequency (RF) switch circuit is disclosed to restrict an input signal input to the RF switch from being transferred to a switch controller when a floating resistor is connected to an NMOS FET and a PMOS FET of the RF switch and the switch controller formed through a standard CMOS (Complementary Metal Oxide Semiconductor) process. The RF switch circuit includes: an RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch formed on a single chip substrate and changing a transmission path of an RF signal; a switch controller having at least one NMOS switch and PMOS (P type Metal Oxide Semiconductor) formed on the chip substrate and controlling changing of a path of the RF switch; and a limiter having a deep N type well diode formed on the chip substrate and limiting the level of an RF signal transferred from the RF switch to the switch controller, wherein the NMOS switch of the RF signal receives corresponding power through a floating resistor, and the at least one NMOS switch and PNMOS switch of the switch controller receives corresponding power through a floating resistor. | 08-04-2011 |
| 20110260806 | HIGH-FREQUENCY CIRCUIT, HIGH-FREQUENCY DEVICE, AND MULTIBAND COMMUNICATIONS APPARATUS - A high-frequency circuit for use in a multiband wireless apparatus for switching the connection between an antenna and transmission/reception circuits depending on signals for pluralities of communications systems, comprising a single-pole, multi-throw switch circuit comprising FET switch circuits between a common port connected to an antenna-side circuit and pluralities of single ports connected to the transmission/reception circuits, and a first matching circuit connected to the common port; the first matching circuit comprising a first inductance element connected in series to a signal path between the antenna and the common port, and a first capacitance element connected to the first inductance element on the antenna side and grounded; the first inductance element making the impedance of the single-pole, multi-throw switch circuit inductive when the single port is viewed from the antenna side; and the first capacitance element adjusting impedance matching between the antenna-side circuit and the transmission/reception circuits. | 10-27-2011 |
| 20110267154 | HIGH POWER RF SWITCH WITH ACTIVE DEVICE SIZE TAPERING - In an improved T/R switch configuration of a radio transceiver, the sizes of active switches coupled in series between the receive port and the common port are tapered such that the voltage referenced to ground across the active devices of the T/R switch is more evenly distributed among the switches which increases the power handling capability of that path. According to one embodiment of the present invention, an RF switch includes a plurality of first switches coupled in series between a transmit port and a common port for transmitting an RF signal, and a plurality of second switches coupled in series between a receive port and the common port. At least two of the plurality of second switches have different sizes such that the at least two of the second switches have substantially the same nodal impedance with respect to a frequency of the RF signal and an RF ground. | 11-03-2011 |
| 20110279191 | PLANAR INTEGRATED SWITCHING DEVICE - The present invention provides a space saving and simply implementable planar integrated switching device comprising at least two CPW-slotline transition units each including an access for inputting and/or outputting a transmission signal, a slotline connecting said at least two CPW-slotline transition units, and a switching element arranged on said slotline between said at least two CPW-slotline transition units for switching the transmission signal over said slotline on and off under control of a switch control signal. | 11-17-2011 |
| 20110298559 | APPARATUS AND METHOD FOR DIRECTIONAL COUPLING - Apparatuses and methods for directional coupling are disclosed. In one embodiment, an apparatus includes a directional coupler, a termination impedance, a switch, and a control block. The directional coupler includes a power input terminal, a power output terminal, a couple terminal and a terminate terminal. The power input terminal can receive a radio frequency signal from a power amplifier, and the power output terminal can be electrically connected to a load. The switch has an ON state and an OFF state, and includes an input electrically connected to the terminate terminal and an output electrically connected to the termination impedance. The switch is configured to provide a relatively low impedance path between the input and the output when in the ON state and to provide a relatively high impedance path between the input and the output when in the OFF state. The control block can set the state of the switch. | 12-08-2011 |
| 20120025927 | RF ISOLATION SWITCH CIRCUIT - In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to-source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor. | 02-02-2012 |
| 20120068785 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a body and a semiconductor element. The body includes a semiconductor mount, a first conductor and a second conductor provided on a periphery of the semiconductor mount. The semiconductor element is disposed on the semiconductor mount and includes a first through switching element, a first shunt switching element, a second through switching element, and a second shunt switching element. The first through switching element is connected between a common terminal and a first radio frequency terminal. A first radio frequency current is flowing through the first through switching element via the first conductor. The first shunt switching element is connected to the first radio frequency terminal. The second through switching element is connected between the common terminal and a second radio frequency terminal. The second shunt switching element has one terminal connected to the second radio frequency terminal and another terminal. | 03-22-2012 |
| 20130009725 | Switching System and Method - The invention relates to a Radio Frequency System and method. A Radio Frequency (RF) system comprising a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) for switching at least one or more RF signals and said SOI comprises a bulk substrate region and a buried oxide region. At least one filter is adapted to isolate the RF signal from the substrate and/or other high frequency signals or control signals present in the RF system. There is also provided a coupling capacitor adapted to cooperate with the filter to improve linearity of the transistor switch elements. | 01-10-2013 |
| 20130113575 | RADIO-FREQUENCY SWITCHES HAVING EXTENDED TERMINATION BANDWIDTH AND RELATED CIRCUITS, MODULES, METHODS, AND SYSTEMS - Circuits and methods related to a switch having extended termination bandwidth are disclosed. A switch having an input end and an output end, and capable of being in an ON state and an OFF state, can include a termination circuit configured to yield an extended frequency bandwidth in which a desired OFF state termination impedance is provided. A termination circuit may include two or more electrically parallel resistor-capacitor branches coupled to the switch input or output end. A switch termination circuit may provide an OFF state termination impedance that is substantially equal to the switch ON state termination impedance. Also, a termination circuit may enable a desired termination impedance without sacrificing other switch performance features, including insertion loss, isolation, or VSWR difference between ON and OFF states. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication. | 05-09-2013 |
| 20130187728 | HIGH FREQUENCY SWITCH - There is provided a high frequency switch having a reduced circuit scale while maintaining satisfactory harmonic characteristics in a transfer path of a high frequency signal. The high frequency switch includes: at least one transmission port; at least one reception port; a common port; transmission side series switches each including a body contact type FET; transmission side shunt switches each including a body contact type FET; reception side series switches each including a body contact type FET; and reception side shunt switches each including at least one floating body type FET. | 07-25-2013 |
| 20130314171 | SWITCHABLE FREQUENCY DIPLEXER CIRCUIT - An electronic circuit comprises a high-pass and a low-pass. The low-pass comprises at least one low-pass series element and a low-pass transverse element. The high-pass comprises at least one high-pass series element and a high-pass transverse element. The low-pass series element and the high-pass transverse element are realised in this context by a common component, and/or the high-pass series element and the low-pass transverse element are realised in this context by a common component. | 11-28-2013 |
| 20130321095 | LOW-LOSS HIGH-ISOLATION SWITCHING ARCHITECTURE - Disclosed are switching circuits and methods that enable a device to switch between two wireless protocols with antenna sharing. In some implementations, the device may use two different wireless protocols concurrently and with high isolation. In some implementations, the device can be provided with insertion loss matched transmission diversity for one of the wireless protocols. In some embodiments, various signal paths and related switches that allow such functionalities can be implemented on a single die such as a silicon-on-insulator (SOI) die. | 12-05-2013 |
| 20130335160 | ANTENNA SWITCHING CIRCUITRY - This disclosure relates to antenna switching circuitry and other radio frequency (RF) front-end circuitry. In one embodiment, the antenna switching circuitry includes a multiple throw solid-state transistor switch (MTSTS) and a multiple throw microelectromechanical switch (MTMEMS). The MTSTS is configured to selectively couple a first pole port to any one of a first set of throw ports and to selectively couple a second pole port to any one of a second set of throw ports. The MTMEMS is configured to selectively couple a third pole port to any one of a third set of throw ports. The third pole port of the MTMEMS is coupled to a first throw port in the first set of throw ports and a second throw port in the second set of throw ports of the MTSTS. Accordingly, the MTSTS is capable of routing multiple RF signals to and from the MTMEMS. | 12-19-2013 |
| 20130335161 | ANTENNA SWITCHING CIRCUITRY FOR MIMO/DIVERSITY MODES - This disclosure relates to antenna switching circuitry and other radio frequency (RF) front-end circuitry. In one embodiment, the antenna switching circuitry includes a multiple throw solid-state transistor switch (MTSTS), a multiple throw microelectromechanical switch (MTMEMS), and a control circuit. The MTSTS is configured to selectively couple a first pole port to any one of a first set of throw ports and to selectively couple a second pole port to any one of a second set of throw ports. The MTMEMS is configured to selectively couple a third pole port to any one of a third set of throw ports. The control circuit is configured to control the selective coupling of the MTSTS and the MTMEMS. In this manner, the control circuit may operate the antenna switching circuitry so that RF signals may be routed in accordance with Long Term Evolution (LTE) Multiple-Input and Multiple-Output (MIMO) and/or LTE diversity specifications. | 12-19-2013 |
| 20140043110 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes multiple field effect transistors provided between an antenna terminal to be connected to an antenna and multiple external terminals through which RF signals are capable of being supplied and a voltage generating circuit. When the field effect transistors provided between one of the multiple external terminals and the antenna terminal are turned off, the voltage generating unit charges a capacitor via a resistor circuit by switching the polarity of the RF signal to be supplied to the other external terminal with respect to the control signal and outputs a voltage based on a sum of the charge voltage and the voltage of the control signal as the gate drive voltage. The resistor circuit includes a first resistor including positive temperature characteristics and a second resistor including negative temperature characteristics. | 02-13-2014 |
| 20140062613 | SYSTEMS AND METHODS FOR HIGH POWER RF CHANNEL SELECTION - A switch is disclosed for selecting a port. The switch includes a dielectric layer, a first circuit, and a second circuit. The first and second circuits are disposed on the dielectric layer and electrically coupled to each other through the dielectric layer. The first circuit includes a set of ports. The switch further includes a control port for receiving a control signal and a plurality of switching elements. The control signal selects at least one of the set of ports to be connected to the second circuit by setting operational states of the plurality of switching elements. | 03-06-2014 |
| 20140139298 | RF SWITCH WITH TRANSFORMER AND SWITCHING METHOD THEREOF - A radio frequency (RF) switch with a transformer and a switching method thereof are provided. The RF switch includes a transmitting end transformer having a primary side connected to a transmitting end and a secondary side connected to an antenna; and a receiving end transformer having a primary side connected to the antenna and a secondary side connected to a receiving end. In a transmission mode, the transmitting end transformer is tuned on, and, in a reception mode, the receiving end transformer is turned on. Accordingly, since switching is performed based on transformers rather than transistors connected in series, the RS switch, which can achieve high linearity and low insertion loss as well as high isolation, can be implemented. | 05-22-2014 |
| 20140152395 | LOW PHASE SHIFT VOLTAGE VARIABLE ATTENUATOR - Disclosed is a low phase shift voltage variable attenuator. The low phase shift voltage variable attenuator may include: a first directional coupler including a first input terminal in which a signal is input, a first isolation terminal connected to a ground power source through a termination resistor, a first coupling terminal, and a first through terminal; a second directional coupler including a second input terminal through which an attenuated signal, which is the attenuated input input signal, is output, a second isolation terminal connected to a ground power source through a termination resistor, a second coupling terminal, and a second through terminal; and a signal attenuating unit connected to the first coupling terminal, the first through terminal, the second coupling terminal, and the second through terminal, and configured to attenuate a signal transmitted through the first directional coupler to transmit the attenuated signal to the second directional coupler. | 06-05-2014 |
| 20140159831 | RF DEVICE WITH A TRANSMIT/RECEIVE SWITCH CIRCUIT - A transmit/receive switch circuit has a comprises a controllable transmit section and a controllable receive section, having an output and an input coupled to an RF transmit/receive terminal respectively. The transmit section comprises a first transistor having a main current channel coupled between an RF transmit signal input and the RF transmit/receive terminal. The receive section comprises a first transistor having a main current channel coupled between the RF transmit/receive terminal and a RF receive signal output and a second transistor having a main current channel coupled between the RF receive signal output and ground. A signal that is derived from an RF input signal at the RF transmit/receive terminal is rectified. The rectified signal is used to control a control electrode of the second transistor of the receive section to make this transistor increasingly conductive with increasing RF signal amplitude. The rectified signal may also be used to control a control electrode of the first transistor of the transmit section in this way. Thus, the transmit/receive switch circuit is made to perform a limiting function. | 06-12-2014 |
| 20140203887 | MODULE - A module includes: a diplexer that includes a first terminal, a second terminal, and a common terminal coupled to an antenna; a first switch that is coupled to the first terminal, includes first ports, and selects, from the first ports, and connects one port to the diplexer; a first duplexer that is coupled to at least one of the first ports; a second duplexer that is coupled to the second terminal and has a passband different from a passband of the first duplexer; and a first impedance portion that is coupled to another port of the first ports. | 07-24-2014 |
| 20140218126 | HIGH FREQUENCY SWITCH - There is provided a high frequency switch which is satisfactory in terms of both insertion loss characteristics and harmonic characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units includes a plurality of series-connected MOSFETs formed on a silicon substrate, the plurality of MOSFETs are any one of body contact-type FETs and floating body-type FETs, and each of the switching units includes both of the body contact-type FETs and the floating body-type FETs. | 08-07-2014 |
| 20140327494 | TRANSMISSION CIRCUIT AND SIGNAL TRANSMISSION AND RECEPTION CIRCUIT - A transmission circuit includes a first path that connects a first terminal for inputting or outputting signals, and one of a pair of second terminals for outputting or inputting the signals; a second path that connects the first terminal and another one of the pair of second terminals; a first circuit including a first capacitor that is serially inserted in the first path, which is configured to perform single-differential conversion on signals transmitted through the first path, to perform impedance matching, and to supply a bias voltage; a second circuit including a first inductor that is serially inserted in the second path, which is configured to perform single-differential conversion on signals transmitted through the second path, to perform impedance matching, and to supply a bias voltage; and a switch that is connected between the two terminals of the pair of second terminals. | 11-06-2014 |
| 20140327495 | SPST SWITCH, SPDT SWITCH, SPMT SWITCH AND COMMUNICATION DEVICE USING THE SAME - Various embodiments provide a single pole single throw switch. The switch may include a first terminal, a second terminal and a control terminal; a field-effect transistor having a drain connected to the first terminal, a source connected to the ground, and a gate; a bias resistor connected between the gate of the field-effect transistor and the control terminal; an inductor connected between the first terminal and the second terminal; and a capacitor having one end connected to the second terminal and another end connected to the ground. | 11-06-2014 |
| 20150022282 | SEMICONDUCTOR DEVICE AND METHOD FOR ADJUSTING IMPEDANCE OF OUTPUT CIRCUIT - An impedance adjustment circuit includes a counter circuit outputting a count value thereof as a plurality of first impedance adjustment signals, a mode selection circuit setting a second impedance adjustment signal to be in an active/inactive state irrespective of the count value, and a level fixing circuit fixing a third impedance adjustment signal to be in an active state. A pre-stage circuit generates a plurality of first output control signals, a second output control signal, and a third output control signal in response to the first impedance adjustment signals, the second impedance adjustment signal, and the third impedance adjustment signal, respectively, and a data signal. An output circuit includes a plurality of first transistors, a second transistor, and a third transistor connected in parallel to each other between an output terminal and a first power supply wiring. Control terminals of the first transistors, the second transistor, and the third transistor receive the first output control signals, the second output control signal, and the third output control signal, respectively. | 01-22-2015 |
| 20150054594 | SWITCH - A switch for controlling signal propagation between a first and second contact is proposed. This switch comprises a control mechanism configured to allow signal propagation between the first and second contacts when the switch is turned on and prevent signal propagation between the first and second contacts when the switch is turned off. The switch also comprises a compensating member having a transmission line and a ground plane. The ground plane in turn comprises at least one defect configured to affect one or both of the inductance and capacitance of the transmission line when signals propagate through the transmission line. | 02-26-2015 |
| 20150130556 | Transistor and Tunable Inductance - According to a first aspect embodiments provide a transistor including at least one gate region between at least one drain region and at least one source region, wherein a ratio between a width of the gate region and a length of the gate region exceeds 300. | 05-14-2015 |
| 20150130557 | Optimized RF Switching Device Architecture for Impedance Control Applications - A switch architecture having open reflective unselected ports. Signals can be selectively coupled between a common port and at least one selectable port through series connected switches. When one or more port is selected, the remaining ports are opened. In addition, associated “shuntable” switches from each of the selectable ports to ground are always open, regardless of the ON or OFF state of the series switches; thus, there is no normally active connection of the selectable ports to ground, but the presence of the shuntable switches provides electrostatic discharge protection for all ports. Embodiments of the invention allow configurability between a traditional architecture and an open reflective unselected port architecture, and include integrated circuit and field effect transistor embodiments. | 05-14-2015 |
| 20150145614 | SYSTEMS, CIRCUITS AND METHODS RELATED TO LOW-LOSS BYPASS OF A RADIO-FREQUENCY FILTER OR DIPLEXER - Disclosed are systems, circuits and methods related to low-loss bypass of a radio-frequency (RF) filter or diplexer. In some embodiments, a switching network circuitry can include a first switch that has an input pole configured to receive a radio-frequency (RF) signal, a pass-through throw configured to be connectable to the input pole to allow routing of the RF signal to an RF component, and at least one dedicated bypass throw configured to be connectable to the input pole and at least one bypass conduction path. The switching network circuitry can further include a second switch that has a pole and a throw, and is connectable between an output of the RF component and the bypass conduction path. Use of the dedicated bypass throw(s) in the first switch allows implementation of low-loss bypass of the filter or diplexer. | 05-28-2015 |
| 20160006409 | RADIO FREQUENCY SWITCHING SYSTEM WITH IMPROVED LINEARITY - A radio frequency (RF) circuit is described that comprises a plurality of switching arms selectively activatable and associated with corresponding RF input ports. A switch source impedance is associated with each of the RF input ports. The switch source impedance is frequency dependent with its value matched to a characteristic impedance value within a first frequency range. The value of the switch source impedance is not matched to the characteristic impedance value within a second frequency range. When an RF signal within the first frequency range is transmitted through the RF circuit, between one of the RF input ports and an a common port, an RF distortion voltage within a distortion frequency range results at the common port; and the amplitude of a resultant RF distortion voltage is lower than an RF distortion voltage if the switched source impedance is matched to the characteristic impedance within the second frequency range. | 01-07-2016 |
| 20160079650 | System and Method for a Directional Coupler - In accordance with an embodiment, a circuit includes a directional coupler having a plurality of ports comprising an input port, a transmitted port, an isolated port and a coupled port, and an adjustable termination coupled to at least one of the plurality of ports. | 03-17-2016 |
| 333104000 | Using TEM lines | 8 |
| 20090115550 | SINGLE-POLE-DOUBLE-THROW SWITCH INTEGRATED WITH BAND PASS FILTERING FUNCTION - A single-pole-double-throw switch is provided, which is configured to be integrated with a bandpass filtering function and includes four quarter-wavelength transmission lines connected in series, five resonators connected in parallel to each other, and four transistors connected in parallel to four of the five resonators. When two of the four transistors are turned on and the others are turned off, the single-pole-double-throw switch is equivalent to a third-order quarter-wavelength short-circuited stub bandpass filter. | 05-07-2009 |
| 20100277252 | MULTI-MODE RADIO FREQUENCY FRONT END MODULE - A radio frequency (RF) front end circuit for connecting an antenna to a transceiver having multiple operating modes is disclosed. The circuit has a first transmit input receptive to signals of a first operating mode and a second operating mode from the transceiver. There is also a second transmit input receptive to signals of a third operating mode from the transceiver. The circuit has a first power amplifier for the first and second operating modes, a second power amplifier for the first operating mode, and a third power amplifier for the second and third operating mode. A first switch network selectively interconnects the first transmit input to a one of the second and third power amplifiers. | 11-04-2010 |
| 20100289597 | HIGH POWER UHF SINGLE-POLE MULTI-THROW SWITCH - A single pole multiple-throw switch for switching an RF signal to one of a plurality of outputs includes coupling the signal to a throw junction, said junction having connected thereto a plurality of switch legs, each leg includes a high voltage shunt diode spaced one quarter-wavelength from the throw junction; each diode mounted at its cathode end to a capacitor and adapted to receive a bias; wherein a controller applies a first DC bias to a selected one of the diodes to cause the selected diode to operate in reverse bias mode, such that the selected diode mounted on the corresponding capacitor provides a low insertion loss to pass the RF signal from the transmission line through the selected leg and to one of the outputs; and applies a second DC bias to the other diodes to cause the other diodes to operate in forward bias mode such that the other diodes mounted onto the corresponding capacitor provides a high insertion loss for blocking the RF signal to the remaining outputs. | 11-18-2010 |
| 20110057745 | HIGH-FREQUENCY SWITCH - Provided is a high-frequency switch formed by a first switch circuit connected in parallel to a first λ/4 signal transmission path for transmitting a transmission signal from a transmission terminal and a second switch circuit connected in parallel to a second λ/4 signal transmission path for transmitting a reception signal to a reception terminal. The high-frequency switch further includes a directivity coupler which has the first λ/4 signal transmission path as a constituent element and detects a reflected wave of the transmission signal. The directivity coupler includes: the first λ/4 signal transmission path; a λ/4 signal line arranged to oppose to the first λ/4 signal transmission path; a reflected wave output terminal connected to one end of the λ/4 signal line; and a terminal resistor connected to the other end of the λ/4 signal line. | 03-10-2011 |
| 20110109401 | HIGH-FREQUENCY MODULE - A high-frequency switch module includes an ESD device, a switch IC, and a SAW filter element that are mounted on the surface of a multilayer substrate. A ground-side land for the ESD device is connected to an external-connection ground electrode for the ESD device by via holes and plane electrode patterns. A ground connection land for the switch IC and a ground connection land for the SAW filter element are connected to a common inner ground electrode by via holes, and are connected to a common external-connection ground electrode by via holes and another common inner ground electrode. | 05-12-2011 |
| 20110234333 | SEMICONDUCTOR SWITCH, TRANSCEIVER, TRANSMITTER, AND RECEIVER - A semiconductor switch includes a main line, branch lines branching from the main line at the same branch point, switching devices shunt-connected between one of the branch lines and ground and operated so that the one of the branch lines is connected to and disconnected from ground, a main terminal connected to an end of the main line, and branch terminals connected to an end of one of the branch lines. The impedance of one of the branch lines, as seen from the branch point, is conjugately matched to the combined impedance of the main line and the rest of the branch lines, as seen from the branch point, the one of the branch lines transmitting an RF signal, and the rest of the branch lines blocking the RF signal. | 09-29-2011 |
| 20110285475 | RF Front-End with Integrated T/R Switch - Disclosed is a transmit/receive circuit arrangement wherein a transceiver circuit including a transmit/receive switch is fabricated on an integrated circuit chip. A matching network is wholly disposed off-chip relative to the integrated circuit chip. In embodiments, at least a portion of the matching network is formed off-chip and a portion of the matching network is formed on-chip. | 11-24-2011 |
| 20110309893 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, IN-MILLIMETER-WAVE DIELECTRIC TRANSMISSION DEVICE, METHOD OF MANUFACTURING THE SAME, AND IN-MILLIMETER-WAVE DIELECTRIC TRANSMISSION SYSTEM - Provided is an in-millimeter-wave dielectric transmission device. The in-millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of in-millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure, and a dielectric transmission path provided between the two semiconductor packages to transmit a millimeter wave signal. The semiconductor packages are mounted such that the antenna structures thereof are arranged with the dielectric transmission path interposed therebetween. | 12-22-2011 |
