Entries |
Document | Title | Date |
20080204115 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME, AND POWER CONVERSION APPARATUS INCORPORATING THIS SEMICONDUCTOR DEVICE - The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising. | 08-28-2008 |
20080231342 | PROGRAMMABLE CALIBRATION CIRCUIT FOR POWER SUPPLY CURRENT SENSING AND DROOP LOSS COMPENSATION - A circuit for regulating power is disclosed. The present invention provides circuits and methods for current sensing variations, static droop settings, mismatched phase outputs, and temperature variations in a multiphase power regulator. The circuits may include a calibration controller that senses and regulates both a current sensing circuit and the droop in a power regulator over a range of temperatures thus equalizing phase outputs. The present invention includes the schematic organization and implementation of the circuit, the circuit's calibration, its use, and implementation. This invention advantageously provides circuits and methods to properly power a processor or IC chip according to the unique power specifications of the processor or chip. | 09-25-2008 |
20080238529 | TEMPERATURE DETECTION CIRCUIT - A PWM signal generation circuit in an IPM includes an amplification circuit amplifying a voltage across terminals of a temperature sensor, a comparison circuit generating a PWM signal based on a triangular wave signal and an output signal of the amplification circuit, and a correction circuit setting an amplification ratio of the amplification circuit such that a pulse width of the PWM signal is set to a reference pulse width in an adjustment mode in which a switching element is caused to have a reference temperature. Consequently, characteristic variations in the temperature sensor, the amplification circuit, and the like can be corrected, and the temperature of the switching element can be detected with high accuracy. | 10-02-2008 |
20080252360 | Temperature detector circuit and oscillation frequency compensation device using the same - A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a sauce of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and sauce are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's sauce is connected with a first power supply. | 10-16-2008 |
20080272828 | Method and system for adaptive power management - A system comprises an integrated circuit comprising one or more transistors that receive a supply voltage. The system also includes a reference transistor operable to receive a constant current and produce a reference voltage that varies according to temperature or process variations, wherein the reference transistor behaves similarly to at least one of the one or more transistors with respect to temperature or process variations. The system also includes a comparator operable to compare the reference voltage with the received supply voltage and produce an output based at least in part on the difference between the reference voltage and the received supply voltage. The system further includes a controller operable to adjust the received supply voltage based at least in part on the output of the comparator. | 11-06-2008 |
20080297228 | TEMPERATURE SENSING CIRCUIT AND METHOD USING DLL - A temperature sensing circuit using a delay locked loop and a temperature sensing method. The temperature sensing circuit includes a locked delay unit for receiving an external clock and generating a locked delay pulse keeping a constant delay amount regardless of temperature. A variable delay unit may have a chain structure of a plurality of delay cells depending upon temperature. The variable delay unit may receive the external clock and generate variable delay pulses having respectively different delay amounts based on temperature. A decision control unit is configured to sense a determination temperature by using a phase difference between one selected from the variable delay pulses and the locked delay pulse. Accordingly, an unnecessary time and cost causable by temperature compensation can be reduced, and an automatic temperature compensation and a precise temperature sensing operation can be obtained. | 12-04-2008 |
20080303581 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a driver provided for a semiconductor element having a control electrode to which a drive voltage is applied, the semiconductor element being switched between the conduction state and the non-conduction state based on the drive voltage, the driver operative to apply the drive voltage to the control electrode; a detector operative to supply a voltage detection signal oscillating at a certain frequency to the control electrode to detect a first voltage having a certain relation to a voltage applied to the semiconductor element; and a controller operative to control the detector based on the first voltage detected at the detector. | 12-11-2008 |
20090002056 | ACTIVE RESISTANCE CIRCUIT WITH CONTROLLABLE TEMPERATURE COEFFICIENT - Embodiments of the invention provide a circuit to implement an on-chip resistor with desired temperature coefficient behavior. In some embodiments, a circuit may comprise an amplifier, with a reference controlled by ratioed amounts of one or more positive temperature coefficient (TC+) and/or negative temperature coefficient (TC−) circuits, coupled to a controllable resistor device to control it as temperature changes to track the desired temperature coefficient behavior. | 01-01-2009 |
20090002057 | Temperature sensor circuit and method for controlling the same - A temperature sensor circuit includes a first reference voltage generator configured to generate a first reference voltage signal by using a first signal linearly varying with temperature, a second reference voltage generator configured to generate a second reference voltage signal with a predetermined logic level by using the first reference voltage signal, and a controller configured to compare the first signal with the second reference voltage signal and control a voltage level of the first signal according to the comparison result. | 01-01-2009 |
20090009234 | Proportional Settling Time Adjustment For Diode Voltage And Temperature Measurements Dependent On Forced Level Current - A temperature sensor circuit and system providing accurate digital temperature readings using a local or remote temperature diode. In one set of embodiments a change in diode junction voltage (ΔV | 01-08-2009 |
20090009235 | Semiconductor memory device - A semiconductor memory device includes a memory cell array and a voltage generation circuit for generating a voltage applied to the memory cell array, in which a plurality of drive MOS transistors having different width dimensions are selectively connected in parallel between an output line and the ground. The voltage is adjusted in response to the surrounding temperature in such a way that a prescribed number of drive MOS transistors selected from among the plurality of MOS transistors are normally and simultaneously driven. Thus, it is possible to precisely adjust the voltage in units of adjustment corresponding to differences of width dimensions without degrading the performance of the semiconductor memory device in a low current consumption mode. | 01-08-2009 |
20090027105 | Voltage divider and internal supply voltage generation circuit including the same - In a voltage divider and an internal supply voltage generation circuit, the voltage divider includes a first transistor having a resistance value that varies in proportion to a change in temperature; and a second transistor having a resistance value that varies in inverse proportion to the change in temperature. | 01-29-2009 |
20090039944 | REFERENCE VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR STORAGE APPARATUS USING THE SAME - According to an aspect of the present invention, there is provided a reference voltage generation circuit including: a first circuit configured to generate a first voltage that is independent of a power supply voltage and that is dependent of a temperature; a second circuit configured to generate a second voltage that is independent of the power supply voltage and that is dependent of the temperature; and a third circuit configured to compare the first voltage and the second voltage and to generate a reference voltage based on a higher one therebetween. | 02-12-2009 |
20090045866 | INTEGRATED CIRCUIT DEVICE, METHOD OF CONTROLLING OPERATION OF INTEGRATED CIRCUIT DEVICE, AND METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICE - Disclosed is an integrated circuit device comprising a startup operation circuit ( | 02-19-2009 |
20090091373 | TEMPERATURE-SENSOR CIRCUIT, AND TEMPERATURE COMPENSATED PIEZOELECTRIC OSCILLATOR - A temperature-sensor circuit includes: a transistor having an emitter that is grounded, a collector, and a base; a first resistor having a first end and a second end, the first end being coupled with the collector; and a second resistor having a third end and a fourth end, the third end being coupled with the second end of the first resistor. A junction joining the first resistor and the second resistor is coupled with the base. | 04-09-2009 |
20090115491 | PREDICTION STRATEGY FOR THERMAL MANAGEMENT AND PROTECTION OF POWER ELECTRONIC HARDWARE - A hybrid powertrain system includes an engine, an electric machine, a power electronics device including a plurality of electric circuit layers, and a cooling system. A method for managing thermal energy in the power electronics device includes monitoring a plurality of temperature sensors in the power electronics device, monitoring electric power into and out of the power electronics device, predicting temperatures for the plurality of electric circuit layers, and controlling the hybrid powertrain system based upon the predicted temperatures for the plurality of electric circuit layers. | 05-07-2009 |
20090128222 | APPARATUS AND METHOD FOR ADJUSTING WORKING FREQUENCY OF VRD BY DETECTING TEMPERATURE - The invention provides an apparatus for adjusting a working frequency of a VRD by detecting temperature. The apparatus includes a temperature control module, a load module and a controller. The temperature control module is used for detecting a temperature of a CPU, and judging an output load state of the VRD according to the detected temperature of the CPU, so as to output a control signal according the output load state. The load module is connected to the VRD, and is used for providing an external resistance to the VRD. The controller is respectively coupled to the load module and the temperature control module, and is used for receiving the control signal and adjusting a resistance of the load module according to the received control signal, so as to adjust a working frequency of the VRD. A power consumption of the VRD may be reduced based on the present invention. | 05-21-2009 |
20090146725 | TEMPERATURE SENSOR CIRCUIT - Disclosed is a temperature sensor circuit including a bipolar differential pair driven by a constant current and having an emitter area ratio of 1:N (N>1) and two MOS transistors having the transistor size ratio of K:1 (K>1) connected as an active load to the bipolar differential pair. A reference voltage is applied to one of the transistors of the bipolar differential pair. The other transistor has a base and a collector connected together. A desired voltage is output between the bases of the two transistors of the bipolar differential pair. A plural number of the temperature sensor circuits may be connected in cascade ( | 06-11-2009 |
20090153227 | TEMPERATURE SENSOR CIRCUIT - A temperature sensor circuit is provided that facilitates preventing a too-high overshooting voltage from occurring at an output terminal when a power supply is connected to the temperature sensor circuit. The temperature sensor circuit includes a short-circuiting device, disposed in parallel to depletion mode NMOS, that short-circuits the drain and source of depletion mode NMOS when a power supply is connected; and delay device that transmits a signal for short-circuiting the drain and source of depletion mode NMOS for a certain period from the time point of power supply connection to short-circuiting device for preventing the voltage at output terminal of temperature sensor circuit from overshooting. | 06-18-2009 |
20090160528 | METHOD FOR REGULATING TEMPERATURE - A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion of the semiconductor substrate near or including a corresponding power FET. When the temperature of the semiconductor substrate near one or more of the power FETs reaches a predetermined value, the corresponding temperature sensing circuit reduces a voltage appearing on the gate of the power FET. The reduced voltage increases the on-resistance of the power FET and channels a portion of its current to others of the plurality of power FETs. The power FET continues operating but with a reduced current flow. When the temperature of the semiconductor substrate falls below the predetermined value, the gate voltage of the power FET is increased to its nominal value. | 06-25-2009 |
20090167413 | SEMICONDUCTOR DEVICE AND DATA OUTPUTTING METHOD OF THE SAME - Semiconductor device and data outputting method of the same includes an on die thermal sensor (ODTS) configured to output temperature information by detecting an internal temperature of the semiconductor device and an output driver configured to control a slew rate depending on the temperature information and output data. | 07-02-2009 |
20090206911 | Solid State Thermal Electric Logic - A method is provided for thermal electric binary logic control. The method accepts an input voltage representing an input logic state. A heat reference is controlled in response to the input voltage. The method supplies an output voltage representing an output logic state, responsive to the heat reference. More explicitly, the heat reference controls the output voltage of a temperature-sensitive voltage divider. For example, the temperature-sensitive voltage divider may be a thermistor voltage divider. | 08-20-2009 |
20090206912 | Temperature detection circuit - Provided is a temperature detection circuit which can, even when a set range of detected temperature is enlarged, suppress a rise in a lowest operating voltage. The temperature sensor circuit has a function of adjusting a voltage level of an output voltage, thereby suppressing the output voltage of the temperature sensor circuit and a reference voltage from a reference voltage circuit at a predetermined temperature. | 08-20-2009 |
20090237142 | CHARGE CONTROL CIRCUIT AND CHARGE CONTROLLING SEMICONDUCTOR INTEGRATED CIRCUIT - A charge control circuit equipped with a function of controlling a charging current to be supplied to a secondary battery, comprises: a detecting unit for monitoring a temperature; and a charge control unit for controlling so as to break the charging current when the monitored temperature rises to a temperature equal to or more than a predetermined set temperature, decrease the charging current as the monitored temperature becomes higher when the monitored temperature is in a predetermined temperature range lower than the set temperature, flow the charging current having a predetermined current value in a state where the monitored temperature is lower than a lower limit temperature of the temperature range, or flow the charging current having a current value smaller than the current value when the monitored temperature is within a range of from an upper limit temperature of the temperature range to the set temperature. | 09-24-2009 |
20090256622 | SOFT THERMAL FAILURE IN A HIGH CAPACITY TRANSMISSION SYSTEM - A method of managing operation of an Integrated Circuit (IC) designed to process a signal A temperature of the IC is detected, and signal processing performed by the IC adjusted based on the detected temperature. | 10-15-2009 |
20090256623 | Temprature sensor circuit - In a temperature sensor circuit, a temperature sensor is configured to output a first voltage corresponding to temperature. A voltage source is configured to output a second voltage having the same nonlinear dependence on the temperature as a nonlinear dependence of the first voltage on the temperature. An amplifier is configured to amplify the second voltage with a first amplification factor to output a third voltage. An inversion amplifier is configured to perform inversion amplification on a difference between the first voltage and the third voltage with a second amplification factor to output a fourth voltage. | 10-15-2009 |
20090273389 | Integrated Circuit Having Temperature Based Clock Filter - An integrated circuit is provided having a system clock and a clock filter. The clock filter has a temperature sensor for sensing a temperature of the integrated circuit and for causing the clock filter to block output of the system clock if the sensed temperature is below or above a predetermined temperature. | 11-05-2009 |
20090295457 | COLD TEMPERATURE CONTROL IN A SEMICONDUCTOR DEVICE - Operation of complex integrated circuits at low temperatures may be enhanced by providing active heating elements within the integrated circuit so as to raise the temperature of at least critical circuit portions at respective operational phases, such as upon power-up. Consequently, enhanced cold temperature performance may be obtained on the basis of existing process elements in order to provide design stability without requiring extensive circuit simulation or redesign of well-established circuit architectures. | 12-03-2009 |
20090295458 | SEMICONDUCTOR INTEGRATED CIRCUIT AND OPERATION METHOD FOR THE SAME - The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit. | 12-03-2009 |
20100001784 | ADJUSTABLE ELECTRICAL COMPONENTS FORMED FROM ARRAYS OF DIFFERENTIAL CIRCUIT ELEMENTS - Adjustable circuit components may be formed from arrays of differential circuit elements such as differential capacitors and differential current sources. The differential circuit elements may each have a control input. The differential circuit elements in each array of differential circuit elements may be connected in parallel between first and second terminals. A thermometer code control signal may be provided to the control inputs to adjust the capacitance, current, or other parameter associated with the adjustable circuit component. Adjustable circuit components may also be formed from an array of capacitors or other circuit elements having successively increasing strengths. | 01-07-2010 |
20100007403 | SYSTEM AND METHOD OF MEASURING TEMPERATURE IN A POWER CONTROLLER - An improved system and method measuring a temperature in a power controller is provided. The system includes a circuit board, a solid state switching device, a heat sink, and a temperature sensor. The solid state switching device may be mounted on the circuit board and controls the switching of power to an industrial load. The heat sink is mounted on the solid state switching device such that a first portion of the heat sink is thermal communication with the solid state switching device and a second portion of the heat sink is in thermal communication with an exposed portion of a trace on the circuit board. The temperature sensor may be in thermal communication with the trace. As such, the temperature sensor may be in thermal communication with the solid state switching device through the trace of the circuit board. | 01-14-2010 |
20100007404 | Temperature sensor circuit and method for controlling the same - A temperature sensor circuit comprises a first reference voltage generator configured to generate a first signal that linearly varies with temperature and a first reference voltage signal that maintains a certain level irrespective of temperature, a second reference voltage generator configured to generate a second reference voltage signal by using the first reference voltage signal, and a controller configured to compare the first signal with the second reference voltage signal and control a voltage level of the first signal according to a comparison result. | 01-14-2010 |
20100013543 | Temperature sensing device and electric device including the same - A temperature sensing device includes a current generator to generate a variable current that varies based on temperature, a charge circuit to accumulate charges based on the variable current, and a count logic circuit to generate a count value synchronized to a clock, and to output the count value as temperature data based on a charged voltage of the charge circuit and a reference voltage. | 01-21-2010 |
20100060341 | Ultra Low Current Consumption Comparator for Thermal Shutdown - An embodiment of the invention relates to a temperature-sensing device and a related method. In an embodiment, the device senses a temperature with a first sensing circuit configured to assert a signal when temperature is above a first temperature threshold level, and a second sensing circuit configured to substantially disable a bias current that powers the first sensing circuit when a sensed level of temperature is below a second, lower temperature threshold level. Accordingly, the device is able to draw substantially reduced current from a power source when the sensed temperature level is less than the second threshold level. Other physical parameters such as strain or pressure may also be sensed using the same technique. | 03-11-2010 |
20100066432 | OPERATING AN INTEGRATED CIRCUIT - The invention relates to operating an Integrated Circuit (IC). The present inventor has assessed that IC systems may suffer from limited lifetime e.g. due to overheating. Among others the invention discloses a method of operating an IC ( | 03-18-2010 |
20100066433 | BIAS CONTROLLER - A bias controller which can adjust a bias voltage of a FET without accidentally setting the bias voltage to a voltage which damages the FET, is provided. The bias controller includes temperature detector | 03-18-2010 |
20100079197 | Method for Operating a Power Semiconductor Circuit and Power Semiconductor Circuit - In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal. | 04-01-2010 |
20100090748 | INTERNAL VOLTAGE GENERATING CIRCUIT - A temperature-compensated internal voltage having a desired compensation range is generated with a sufficient controllability and stability. A temperature characteristic adding circuit generates a standard voltage having temperature dependence from a reference voltage not having temperature dependence. The standard voltage is A/D-converted and then added with standard code information (TN_VREF <4:0>) which specifies the level of the internal voltage. The additional value (TN_VREF | 04-15-2010 |
20100109752 | Semiconductor Device, and Power Source and Processor Provided with the Same - A semiconductor device includes: a transistor having a first electrode coupled to a first power source node to which a first power source voltage is supplied, and a second electrode, and supplying a reference current to a temperature detection element; a diffused resistor including a first semiconductor region having a potential-fixing node coupled to the first power source node, and a second semiconductor region having a first resistor node coupled to the second electrode of the transistor and a second resistor node coupled to a second power source node to which a second power source voltage is supplied, and formed at a surface of the first semiconductor region; and a leakage current correction circuit for allowing a current having approximately the same magnitude and the same direction as a magnitude and a direction of a current flowing via the potential-fixing node and the second resistor node, to flow not via the diffused resistor but via the transistor. | 05-06-2010 |
20100117715 | SENSOR CIRCUIT - Provided is a sensor circuit that is small in circuit scale, but is capable of temperature compensation. A reference voltage circuit (BL | 05-13-2010 |
20100123510 | TEMPERATURE SENSOR - Provided is a temperature sensor capable of performing more precise temperature measurement compared to conventional ones, even when manufacturing fluctuations are present in semiconductor elements forming a circuit for generating a temperature-dependent current. The temperature sensor includes: a temperature-dependent voltage generation circuit for generating a temperature-dependent potential that is dependent on temperature; a current generation circuit for allowing a temperature-dependent current to flow based on the temperature-dependent potential; a reference current generation circuit for generating a reference current that is independent of temperature; a capacitor that is charged alternately with the temperature-dependent current during a first charge period and the reference current during a second charge period; a pulse generation circuit for comparing a charged voltage of the capacitor with a reference voltage to generate a pulse; and a control circuit for alternately supplying the temperature-dependent current and the reference current to the capacitor. The temperature-dependent voltage generation circuit includes switches for switching connection relations between MOS transistors forming a current source circuit included in the temperature-dependent voltage generation circuit and bipolar transistors each serving as a load of the current source circuit. | 05-20-2010 |
20100141328 | DLL-based temperature sensor - A temperature sensor includes an open-loop delay line comprising plural delay cells and a multiplexer configured to select a first number of the plural delay cells; a delay-locked loop comprising plural delay cells and a multiplexer configured to select a second number of the plural delay cells; a clock coupled to an input of the open-loop delay line and to an input of the delay-locked loop; a detector having a first input coupled to an output of the open-loop delay line and a second input coupled to an output of the delay-locked loop; and a finite state machine configured to detect a transition in the output of the phase detector. | 06-10-2010 |
20100156507 | Temperature detection circuit - Provided is a temperature detection circuit capable of preventing malfunction, which may occur when power is turned on. A switch circuit for giving such a potential that a comparator detects a low temperature is provided at an output terminal of a temperature sensor circuit. A switch circuit for giving such a potential that the comparator detects a low temperature is provided at an output terminal of a reference voltage circuit. When the power is turned on, each of the switch circuits is set by a switch control circuit such that the comparator detects a low temperature. | 06-24-2010 |
20100188136 | DYNAMIC THERMAL MANAGEMENT SYSTEM AND METHOD - A dynamic thermal management system regulates heat dissipation of a system or device including a power supply and an amplifier. The heat dissipation from the power supply and amplifier are regulated to distribute heat more evenly across a heat sink shared by the amplifier and the power supply. | 07-29-2010 |
20100219879 | PTAT Sensor and Temperature Sensing Method Thereof - A proportional to absolute temperature (PTAT) sensor is capable of reducing a sensing error resulted from a mismatch between circuit components. The PTAT sensor includes a control unit, a sensing unit and a calculation unit. The control unit generates a control signal. The sensing unit, comprising at least a pair of circuit components having a matching relationship, senses an absolute temperature under the first connection configuration and the second connection configuration respectively to generate a first voltage value and a second voltage value, wherein the first connection configuration and the second connection configuration are decided by interchanging the circuit connections of the pair of circuit components according to the control signal. And the calculation unit, coupled to the sensing unit, calculates a PTAT voltage value according to the first voltage value and the second voltage values. | 09-02-2010 |
20100231286 | Thermal Sensors For Stacked Dies - The invention relates to a method for obtaining temperature values from at least two thermal sensors arranged on resources within a three-dimensional die structure determining at least a partial three-dimensional temperature distribution for said die structure and controlling activity of said resources of said dies in response to said three-dimensional temperature distribution. | 09-16-2010 |
20100231287 | THERMAL COMPENSATION OF AN EXPONENTIAL PAIR - To compensate for changes in temperature, a pair of bipolar transistors is connected to a voltage divider and receives a differential voltage that varies with temperature. The voltage divider includes a set of resistors placed in parallel. The set of resistors has a resistance that changes with temperature. As the resistance changes with temperature, the differential voltage provided by the voltage divider changes in proportion to a change in thermal voltage. | 09-16-2010 |
20100259313 | CIRCUITS AND METHODS FOR TEMPERATURE DETECTION - A temperature detection circuit includes a sensor, an integrated circuit (IC) chip, and a resistor. The sensor is operable for sensing a temperature. The IC chip can compare a sense voltage indicative of the temperature with a threshold voltage indicative of a temperature threshold to determine a temperature condition. The IC chip has a substantially constant parameter. The resistor is externally coupled to the IC chip. The IC chip maintains a current ratio, including a ratio of a first current flowing through the sensor to a second current flowing through the resistor, equal to the substantially constant parameter. | 10-14-2010 |
20100277221 | Method for Solid State Thermal Electric Logic - A method is provided for thermal electric binary logic control. The method accepts an input voltage representing an input logic state. A heat reference is controlled in response to the input voltage. The method supplies an output voltage representing an output logic state, responsive to the heat reference. More explicitly, the heat reference controls the output voltage of a temperature-sensitive voltage divider. For example, the temperature-sensitive voltage divider may be a thermistor voltage divider. | 11-04-2010 |
20100277222 | DRAM TEMPERATURE MEASUREMENT SYSTEM - A converter comprising a comparator having a first input operable to receive a first signal, a second input operable to receive a second signal, and an output, a switch for sinking a portion of the first signal, wherein the switch is responsive to the output, and an integrator connected to the first input, wherein the first signal is a voltage developed by the integrator when a current proportional to the absolute temperature is applied thereto. A method for measuring temperature of a device using a comparator and converting the bitstream of the comparator to a digital output is also given. Because of the rules governing abstracts, this abstract should not be used to construe the claims. | 11-04-2010 |
20100289553 | SEMI-ADAPTIVE VOLTAGE SCALING FOR LOW-ENERGY DIGITAL VLSI-DESIGN - A semi-adaptive voltage scaling method and device for determining minimal supply voltages for digital electronic semiconductor circuitry, e.g., microprocessors, of electronic devices under production testing and “real” operating conditions. The SAVS operates in a closed-loop during a production test phase of the circuitry and in an open-loop mode in an application (operation) phase of the semiconductor circuitry. During production testing, a lowermost level of the supply voltage for the semiconductor circuitry is determined at one single defined temperature at which operating specifications of the circuit are met. The lowermost level is stored in a dedicated electronic memory of the circuitry together with temperature dependent parameters. Afterwards, when the digital electronic circuitry is operated in a “real” application, e.g., a mobile phone, the device and method reads the previously measured and proven data from the memory and regenerates the minimum level of supply voltage for the circuitry, taking into account the actual temperature of the application. As a result, the digital semiconductor circuitry in the “real” application is supplied with a minimum level of supply voltage, whereby specified parameters of the circuitry are met. Thus, a power consumption of the circuitry is advantageously reduced to a minimum. | 11-18-2010 |
20100295603 | DUAL TEMPERATURE CONTROL CIRCUIT - A dual temperature control circuit detects a first temperature of a first location and a second temperature of a second location. The dual temperature control circuit transforms the first temperature to a first voltage signal, and transforms the second temperature to a second voltage signal, and compares the first voltage signal and the second voltage signal to output a third voltage signal, where a controlled circuit is controlled according to the third voltage signal. | 11-25-2010 |
20100308893 | Semiconductor device and method of operating the same - A semiconductor device includes: a high VT part including a first transistor with first threshold voltage; a low VT part including a second transistor with second threshold voltage lower than the first voltage; a temperature detector which measures a temperature of the semiconductor device, determines whether the temperature is in a high temperature state where the temperature is higher than a predetermined temperature or a low temperature state where the temperature is lower than the predetermined temperature, and outputs a signal indicating the high temperature state or the low temperature state; and a controller which receives the signal indicating the high temperature state or the signal indicating the low temperature state, and performs control to cause the high VT part to operate based on the signal indicating the high temperature state and to cause the low VT part to operate based on the signal indicating the low temperature state. | 12-09-2010 |
20100321091 | THERMAL SWITCH FOR INTEGRATED CIRCUITS, DESIGN STRUCTURE, AND METHOD OF SENSING TEMPERATURE - A single-ended thermal switch, design structure, and method of sensing temperature. A circuit includes a first MOS transistor and a second MOS transistor connected in series between a first power supply and a second power supply. The circuit apparatus also includes a signal conditioner connected to a node between the first and second MOS transistors. The first MOS transistor and the second MOS transistor are configured such that a leakage current of the second MOS transistor decreases a voltage of the node below a switch point of the signal conditioner when the temperature exceeds a threshold temperature. | 12-23-2010 |
20100321092 | SEMICONDUCTOR DEVICE - An IGBT is disclosed which separated into two groups (first and second IGBT portioZenerns). First and second Zener diodes each composed of series-connected Zener diode parts are disposed so as to correspond to the groups respectively. Each of the first and second Zener diodes has an anode side connected to a corresponding one of first and second polysilicon gate wirings, and a cathode side connected to an emitter electrode. Temperature dependence of a forward voltage drop of each of first and second Zener diodes is used for reducing a gate voltage of a group rising in temperature to throttle a current flowing in the group and reduce the temperature of the group to thereby attain equalization of the temperature distribution in a surface of a chip. In this manner, it is possible to provide an MOS type semiconductor device in which equalization of the temperature distribution in a surface of a chip or among chips can be attained. | 12-23-2010 |
20100327950 | MINIMIZING NON-LINEARITY ERRORS - A system and method for minimizing non-linearity errors induced in output drive voltage of a transmitter circuit due to on-chip process, voltage, and temperature (PVT) variations. The system including an oscillator for converting an input reference bias voltage into a clock output signal, where the input reference bias voltage varies in response to PVT variations. Also included is a counter for counting the clock output signal and generating a count value corresponding to the clock output of the oscillator. A comparison module operatively coupled to the counter compares the count value with a pre-simulated count value to generate an error signal. Based on the error signal generated by the comparison module, a correction logic adjusts an output drive signal of the transmitter circuit making it immune to PVT variations. | 12-30-2010 |
20100327951 | Semiconductor integrated circuit - A semiconductor integrated circuit includes a first circuit, a second circuit and a control circuit. The first circuit is configured by a first MOS transistor, and a threshold voltage of the first MOS transistor is a first threshold voltage. The second circuit has same logic as the first circuit, and is configured by a second MOS transistor. A threshold voltage of the second MOS transistor is a second threshold voltage, and the second threshold voltage is lower than the first threshold voltage. The control circuit makes one of the first circuit and the second circuit operate depending on a temperature of a chip. The first circuit and the second circuit are installed in a chip. | 12-30-2010 |
20110001546 | SUB-THRESHOLD CMOS TEMPERATURE DETECTOR - A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results. | 01-06-2011 |
20110032023 | TEMPERATURE DETECTION CIRCUIT - A temperature detection circuit includes, a first source follower circuit supplied with a first constant current, a second source follower circuit supplied with a second constant current, and a circuit obtaining a difference between an output voltage from the first source follower circuit and an output voltage from the second source follower circuit. Measurement errors attributable to transistor threshold voltages are canceled out by obtaining a difference between output voltages. | 02-10-2011 |
20110057718 | APPARATUS AND METHOD FOR OFFSET DRIFT TRIMMING - An apparatus is provided that includes a drift trimming stage that includes a first current source providing a current with a first temperature dependency and a second current source providing a current with a second temperature dependency. The first and the second current source are coupled at a first node and configured to have equal currents at a first temperature. There is further a third current source providing a current with a third temperature dependency and a fourth current source providing a current with a fourth temperature dependency. The third current source and the fourth current source are coupled at a second node and configured to have equal currents at the first temperature. There is a first resistor coupled between the first node and a third node, a second resistor coupled between the second node and the third node. The first node and the second node are coupled to provide a combined voltage drop across the first resistor and the second resistor for reducing the offset drift. | 03-10-2011 |
20110068854 | CIRCUIT, TRIM AND LAYOUT FOR TEMPERATURE COMPENSATION OF METAL RESISTORS IN SEMI-CONDUCTOR CHIPS - A temperature compensation circuit for generating a temperature compensating reference voltage (V | 03-24-2011 |
20110080207 | METHOD FOR REGULATING TEMPERATURE AND CIRCUIT THEREFOR - A method and circuit for managing thermal performance of an integrated circuit. In accordance with an embodiment, a thermal limit circuit and a semiconductor device are manufactured from a semiconductor material, wherein the thermal limit circuit is configured to operate at a temperature level that is different from a threshold temperature in response to the thermal sensing element sensing a temperature at least equal to the threshold temperature. | 04-07-2011 |
20110095811 | SUBSTRATE BIAS CONTROL CIRCUIT FOR SYSTEM ON CHIP - A substrate bias control circuit includes a process voltage temperature (PVT) effect transducer that responds to a PVT effect. A PVT effect quantifier is coupled to the PVT effect transducer. The PVT effect quantifier quantifies the PVT effect to provide an output. The PVT effect quantifier includes at least one counter and a period generator. The period generator provides a time period for the counter. A bias controller that is coupled to PVT effect quantifier is configured to receive the output of the PVT effect quantifier. The bias controller is configured to provide a bias voltage. The bias controller includes a bias voltage comparator. | 04-28-2011 |
20110102057 | TEMPERATURE AND PROCESS DRIVEN REFERENCE - A reference voltage generation circuit for generating a reference voltage that can adaptively depend on temperature and process includes: a comparator, having a process, temperature and voltage (PVT) insensitive reference as a first input, and a feedback of the output as a second input, for generating a voltage reference output; a first resistor, coupled to the output of the operational amplifier; a second and a third variable resistor coupled in parallel, and coupled between the first resistor and ground; and a transistor, coupled between the third variable resistor and ground. | 05-05-2011 |
20110102058 | CIRCUIT FOR GENERATING A REFERENCE VOLTAGE - An embodiment of a bandgap voltage reference circuit for generating a bandgap voltage reference. Said embodiment comprises a current generator controlled by a first driving voltage for generating a first current depending on the driving voltage, and a first reference circuit element coupled to the controlled current generator for receiving the first current and generating a first reference voltage in response to the first current. The circuit further comprises a second reference circuit element for receiving a second current corresponding to the first current; said second reference circuit element is adapted to generate a second reference voltage in response to the second current. Said circuit further comprises a third reference circuit element for receiving a third current corresponding to the first current and generating the bandgap reference voltage in response to the third current, and an operational amplifier. The operational amplifier has a first input terminal coupled to the first circuit element for receiving a first reference voltage input based on the first reference voltage, a second input terminal coupled to the second reference circuit element for receive a second input voltage based on the second reference voltage and an output terminal coupled to the controlled current generator to provide the first driving voltage to the current generator according to the difference between the first input voltage and the second input voltage. The circuit also comprises a control circuit comprising first capacitive means and second capacitive means. The first capacitive means have a first terminal coupled to the first reference circuit element to receive the first reference voltage and a second terminal coupled to the first input terminal to provide the first input voltage. The second capacitive means comprise a first terminal coupled to the second reference circuit element for receiving the second reference voltage and a second terminal coupled to the second input terminal to provide the second input voltage. The control circuit also comprises biasing means to selectively provide a common-mode voltage to the second terminals of the first and second capacitive means. | 05-05-2011 |
20110102059 | Location-Related Adjustment of the Operatng Temperature Distribution or Power Distribution of a Semiconductor Power Component, and Component for Carrying Out Said Method - Described is a method for adjusting an operating temperature of MOS power components composed of a plurality of identical individual cells and a component for carrying out the method. As a characteristic feature, the gate electrode network ( | 05-05-2011 |
20110109372 | Semiconductor Device with Thermal Fault Detection - A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold. | 05-12-2011 |
20110156799 | Semiconductor Device with Thermal Fault Detection - A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached. | 06-30-2011 |
20110169551 | TEMPERATURE SENSOR AND METHOD - A temperature sensor and a method for sensing temperature. The temperature sensor has a current generator module that generates a voltage (V | 07-14-2011 |
20110169552 | ON DIE THERMAL SENSOR SUITABLE FOR AUTO SELF REFRESH, INTEGRATED CIRCUIT WITH THE SAME AND METHOD FOR ON DIE THERMAL SENSOR SUITABLE FOR AUTO SELF REFRESH - A semiconductor memory device includes a reference voltage generator for generating a plurality of reference voltages each having different voltage levels in response to a self refresh enable control signal, and a voltage comparator for generating a result signal that controls a self refresh operation cycle by comparing each of the plurality of reference voltages with a temperature information voltage that represents an internal temperature of an integrated circuit. | 07-14-2011 |
20110199149 | METHOD AND DEVICE FOR DRIVING THE FREQUENCY OF A CLOCK SIGNAL OF AN INTEGRATED CIRCUIT - An electronic device may include a controlled generator configured to generate an adjustable frequency clock signal at at least one part of an integrated circuit coupled to the output of the controller generator and including at least one transistor having a gate of less than forty-five nanometers in length. The electronic device may include determination circuitry configured to determine the temperature of the at least one part of the integrated circuit, and drive circuitry coupled to the determination circuitry and configured to control the generator to increase the frequency of the clock signal when the temperature increases. | 08-18-2011 |
20110204957 | SEMICONDUCTOR INTEGRATED CIRCUIT AND OPERATION METHOD FOR THE SAME - The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit. | 08-25-2011 |
20110215859 | CURRENT SOURCE CIRCUIT AND SEMICONDUCTOR DEVICE - A current source circuit includes a reference current source circuit; a reference voltage source circuit generating a voltage proportional to a thermal voltage based on the reference current; a first transistor connected between the reference voltage source circuit and the second power supply voltage and through which a first current flows; a second transistor which has a gate applied with a voltage as a result of addition of the voltage generated by the reference voltage source circuit and a voltage between a source and a drain of the first transistor and through which a second current flows; a current source supplying a third current of a current value proportional to that of the first current; and a third transistor through which a difference current between the second current and the third current flows. An output current is supplied based on the difference current. | 09-08-2011 |
20110234300 | Low Voltage Temperature Sensor and use Thereof for Autonomous Multiprobe Measurement Device - A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor. | 09-29-2011 |
20110267133 | CURRENT GENERATING CIRCUIT - A current generating circuit including a current mirror, an impedance device, a first voltage generating portion and a second voltage generating portion. The current mirror has a current output leg and a current generating leg. The impedance device is connected to the current generating leg. The first voltage generating portion can generate a first voltage that is complementary to absolute temperature. The second voltage generating portion can generate a second voltage that is proportional to absolute temperature. The first voltage generating portion and the second voltage generating portion are arranged to generate an impedance current across the impedance device. The current output leg is operable to output an output current based on the impedance current. The impedance device has an impedance value, a first terminal and a second terminal. An impedance voltage drop across the first terminal and the second terminal is equal to a product of the impedance value and the impedance current. The first voltage is based on an attenuation of the impedance voltage drop. | 11-03-2011 |
20110267134 | TWO LEAD ELECTRONIC SWITCH SYSTEM ADAPTED TO REPLACE A MECHANICAL SWITCH SYSTEM - A system adapted to replace a mechanical switch with an electronic switch, without the need of additional wiring. The electronic switch includes a bridge array for sensing a characteristic, e.g., temperature or pressure, and an electronic circuit having a switch. As the characteristic of the bridge array varies a switch changes states. | 11-03-2011 |
20110279168 | TEMPERATURE SENSOR - A temperature sensor includes a selection signal generation unit and a reference voltage selection unit. The selection signal generation unit is configured to generate first and second selection signals in response to a fuse cutting or an input of a test mode pulse in a test mode. The reference voltage selection unit is configured to output a first reference voltage or a second reference voltage as a first selection reference voltage, and output a third reference voltage or a fourth reference voltage as a second selection reference voltage in response to the first and second selection signals. | 11-17-2011 |
20110291740 | METHOD FOR SUPPLYING AN OUTPUT SUPPLY VOLTAGE TO A POWER GATED CIRCUIT AND AN INTEGRATED CIRCUIT - An integrated circuit, that includes: (i) a power gating switch, the power gating switch includes (a) an input port for receiving an input supply voltage; (b) an output port for outputting an output supply voltage; and (c) a control port for receiving a control signal that determines a difference between a value of the input supply voltage and a value of the output supply voltage; (ii) a power gated circuit, coupled to the output port of the switch, for receiving the output supply voltage; (iii) a mode indicator generator for generating a mode indicator that indicates of a desired mode of the power gated circuit; (iv) a leakage indicator generator for generating a leakage indicator that indicates of a leakage level of the power gated circuit; and (iv) a control circuit, for receiving the mode indicator and the leakage indicator, and for selecting the value of the control signal based on the mode indicator and on the leakage indicator. | 12-01-2011 |
20110298528 | POWER SEMICONDUCTOR SYSTEM - According to one embodiment, a power semiconductor system includes; a first power semiconductor element, a driver IC, a first temperature detection element, a control circuit and an overheat protection control section. The first power semiconductor element controls current flowing between a first electrode and a second electrode with a control electrode. The driver IC supplies a drive signal making the first power semiconductor element on and off. The first temperature detection element detects a temperature of the driver IC. The control circuit supplies a control signal for controlling operation of the driver IC to the driver IC. The overheat protection control section is configured to supply an overheat protection signal to the control circuit based on an output of the first temperature detection element. The control circuit performs overheat protection operation. The overheat protection control section supplies the overheat protection signal to the control circuit. | 12-08-2011 |
20120019308 | PRESSURE SWITCH WITH TEMPERATURE ENABLE FUNCTION - The present invention describes systems and methods of providing a pressure switch with temperature enable function. An exemplary embodiment of the present invention includes a pressure sensor for providing a pressure signal having a first voltage level that is proportional to a pressure applied to the pressure sensor; a temperature sensor for providing a temperature signal having a second voltage level where the second voltage level is proportional to a temperature measured by the pressure sensor; and a control circuit for receiving the pressure signal from the pressure sensor and the temperature signal from the temperature sensor and activating a load when the first voltage level exceeds a threshold voltage level. | 01-26-2012 |
20120068758 | REFERENCE CURRENT SOURCES - Systems, methods, and devices are disclosed, including an electronic device that includes a first data location, a quantizing circuit, and a reference current source, all coupled to an electrical conductor. The reference current source may include a current mirror with a side coupled to the electrical conductor and a second data location coupled to another side of the current mirror. | 03-22-2012 |
20120075005 | Closed Loop Adaptive Voltage Scaling - An integrated circuit is provided with a set of sensors for scaling voltage based on performance of the integrated circuit. The set of sensors are monitored, and sensor provides an output value indicative of a performance metric of the integrated circuit. The output values from the set of sensors are combined using a calibrated model to determine when a threshold value is reached. A change to an operating voltage for a portion of the integrated circuit is initiated in response to reaching the threshold. | 03-29-2012 |
20120081173 | CONTROL CIRCUIT FOR FAN - A control circuit includes a triangular wave generating circuit, a temperature sensing circuit, a first comparator, and a switching circuit. The triangular wave generating circuit outputs a triangular wave signal. The temperature sensing circuit senses a temperature surrounding a fan and outputs a temperature signal. A non-inverting terminal of the first comparator is connected to the triangular wave generating circuit. An inverting terminal of the first comparator is connected to the temperature sensing circuit. The first comparator compares the triangular wave signal with the temperature signal to output a control signal. The switching circuit is connected between a power supply and the fan. The switching circuit turns on or off according to the control signal. | 04-05-2012 |
20120105132 | TEMPERATURE DETECTION DEVICE - Provided is a temperature detection device capable of attaining low current consumption at no expense of detection speed at around a temperature to be detected. The temperature detection device includes a control circuit for outputting a control signal for controlling ON/OFF of such internal circuits as a reference voltage circuit and a comparator. In the control circuit, in order to increase the detection speed at around the temperature to be detected, an oscillation frequency of an oscillation circuit has positive temperature characteristics. Further, the control circuit includes a waveform shaping circuit so as to optimize the waveform of the control signal for controlling ON of the internal circuits, to thereby attain low current consumption. | 05-03-2012 |
20120133422 | DIE TEMPERATURE SENSOR CIRCUIT - A die temperature sensor circuit ( | 05-31-2012 |
20120146708 | METHOD AND APPARATUS FOR APPLICATION OF POWER DENSITY MULTIPLIERS OPTIMALLY IN A MULTICORE SYSTEM - A method and an apparatus are described that delay application of a higher order Power Density Multiplier (PDM) using a time based moving average of a number of active cores in a multicore system. A PDM is applied to a thermal design power budget of a thermal entity and performance of the thermal entity is increased by transferring available power from a thermal entity not in an active state to a thermal entity in an active state. Sufficient time is allowed for the cooling effect of reduced active cores, to influence the active core that receives the extra power (a higher PDM). Similarly delaying application of a lower PDM with the same moving average, but a different threshold, allows a core to retain a higher power allocation until the more active neighbor core(s) cause it to heat up, thereby boosting core performance. | 06-14-2012 |
20120146709 | Circuit Arrangement and Method for Temperature Measurement - A circuit arrangement for temperature measurement comprises an input for connecting a temperature-sensitive element, a that is connected to a first input of a comparator. A reference voltage is connected to a second input of the comparator. Furthermore, the arrangement comprises a sequential logic, that is coupled to the output of the comparator that comprises a first output and a second output. A digitally controllable switch element for providing a superposition signal is connected to the output of the sequential logic and the first input of the comparator. | 06-14-2012 |
20120169399 | CIRCUIT AND METHOD FOR GENERATING A CLOCK SIGNAL - A clock source is configured to provide an oscillating signal to be divided into a clock signal. A temperature sensor senses a first temperature of the clock source. The clock source is subjected to at least one second temperature implemented by a temperature alteration module. A calibration module calibrates the clock signal based on the at least one second temperature, the first temperature, a reference signal, and the oscillating signal at the at least one second temperature. | 07-05-2012 |
20120182062 | TEMPERATURE SENSOR DEVICE - Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit. | 07-19-2012 |
20120194258 | ADAPTIVE THERMAL COMPENSATION CIRCUIT AND METHOD - For thermal compensation for an intrinsic element in a system, a circuit and method are proposed to predict the temperature variation caused by power loss of the intrinsic element, in addition to sense the external environment temperature variation of the intrinsic element, and thus sense the operational temperature of the intrinsic element more precisely. | 08-02-2012 |
20120200336 | ELECTRONIC CIRCUIT HAVING SHARED LEAKAGE CURRENT REDUCTION CIRCUITS - An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits. | 08-09-2012 |
20120229193 | System and Method for Temperature Based Control of a Power Semiconductor Circuit - In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal. | 09-13-2012 |
20120242398 | PROGRAMMABLE TEMPERATURE SENSING CIRCUIT FOR AN INTEGRATED CIRCUIT - A programmable temperature sensing circuit includes a comparator, first and second CTAT sensing elements, first and second PTAT reference circuits, and a selection circuit. When a selection signal is a first logic state, an output terminal of the first PTAT reference circuit is coupled to the second CTAT temperature sensing element for providing a first threshold voltage to the second input of the comparator. When the selection signal is a second logic state different from the first logic state, a series-connection of the first PTAT reference circuit and the second PTAT reference circuit are coupled to the second CTAT temperature sensing element for providing a second threshold voltage to the second input of the comparator. The comparator provides an output voltage indication when a voltage provided by the first CTAT sensing element compares favorably with the selected one of the first or second threshold voltages. | 09-27-2012 |
20120249218 | INDUCED THERMAL GRADIENTS - A temperature difference between a first thermal sensor and a second thermal sensor on a first die is determined. The temperature difference is transmitted from the first die to a circuit on a second die. A temperature from a thermal sensor on the second die is determined. The temperature difference and the temperature from the thermal sensor are utilized on the second die to modify operational characteristics of one or more circuits on the second die. | 10-04-2012 |
20120249219 | INDUCED THERMAL GRADIENTS - A temperature difference between a first thermal sensor and a second thermal sensor on a first die is determined. The temperature difference is transmitted from the first die to a circuit on a second die. A temperature from a thermal sensor on the second die is determined. The temperature difference and the temperature from the thermal sensor are utilized on the second die to modify operational characteristics of one or more circuits on the second die. | 10-04-2012 |
20120293238 | CIRCUIT USED FOR INDICATING PROCESS CORNER AND EXTREME TEMPERATURE - The present invention discloses a circuit used for indicating process corner and extreme temperature. It mainly comprises a proportional to absolute temperature (PTAT) current source, a negative to absolute temperature (NTAT) current source, a constant to absolute temperature (CTAT) current source, a corner detector, a poly detector, an extreme temperature detector. The circuit can save more power consumption without trade-off. In debug phase, the suspect sample can read out which state is and can run simulation check quickly to identify the real problem. In production phase, process indicator can easy read out at CP station. In the mean time, the large quantity of data can be easy collected and analyzed. | 11-22-2012 |
20120306564 | MANAGING A TEMPERATURE OF A SEMICONDUCTOR SWITCHING ELEMENT - In a method for operating a plasma installation, an induction heating installation or a laser excitation installation in a pulsed power output operation, includes controlling at least one semiconductor switching element to produce a power loss in the at least one semiconductor switching element during a pulse pause time period in a pulse pause operation during which no power suitable for the ignition or the operation of the plasma process, the induction heating process, or the laser excitation process is produced at a power output of a power generator by the at least one semiconductor switching element of the power generator, and such that a reduction of a temperature of the at least one semiconductor switching element by more than a predetermined value is prevented. | 12-06-2012 |
20120319759 | SEMICONDUCTOR INTEGRATED CIRCUIT AND OPERATION CONTROL METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT - According to an embodiment, a semiconductor integrated circuit has a control section configured to execute feedback control by regulating a control parameter of a circuit section based on a temperature or an operation speed of the circuit section so that the temperature is stabilized, a history register configured to store historical data including first historical data that are time series data of the temperature, and second historical data that are time series data of the control parameter, and effectiveness determining section configured to determine effectiveness of the feedback control from the historical data. | 12-20-2012 |
20130027115 | METHOD FOR CONTROLLING TEMPERATURE OF TERMINAL AND TERMINAL SUPPORTING THE SAME - A method for controlling a temperature of a terminal and a terminal supporting the same are provided. A terminal supporting temperature control includes a temperature sensor for detecting a temperature of the terminal, and a controller for performing at least one of a first throttle procedure including driving the controller with a first preset driving frequency when the temperature of the terminal detected by the temperature sensor is a first preset temperature, and driving the controller with a second driving frequency higher than the first driving frequency when the temperature of the terminal is reduced to a second preset temperature lower than the first preset temperature, and a second throttle procedure including driving the controller with the first preset driving frequency for a first time, and driving the controller with the second driving frequency higher than the first driving frequency for a second time after the first time elapses. | 01-31-2013 |
20130033303 | INTEGRATED CIRCUIT - An integrated circuit is provided with a substrate, an electrode, two diffusion areas, and a resistance heater. The substrate includes a first surface and second surface that are substantially parallel to each other. The electrode is laminated onto the first surface. The two diffusion areas are disposed within the substrate in the vicinity of the electrode to form one transistor with the electrode. The resistance heater is located on an area of the second surface across the substrate from the electrode. The resistance heater produces heat by allowing electric current to flow. | 02-07-2013 |
20130043927 | Integrated Circuit With Pre-Heating For Reduced Subthreshold Leakage - Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided. | 02-21-2013 |
20130135032 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME FOR TEMPERATURE COMPENSATING ACTIVE RESISTANCE - In an embodiment a circuit provides an active resistance that is adjusted with temperature, the active resistance has a magnitude and temperature coefficient that is selected by the values of external resistors. The active resistance is controlled by an active resistance controller that uses a temperature dependent source and a temperature stable source to control adjustment of a first adjustable resistance to maintain correspondence between a temperature dependent parameter and a temperature stable parameter, and adjusts a second adjustable resistance that is part of the active resistance in correspondence with adjustment of the first adjustable resistance. | 05-30-2013 |
20130234780 | ADAPTIVE THERMAL COMPENSATION CIRCUIT AND METHOD - For thermal compensation for an intrinsic element in a system, a circuit and method are proposed to predict the temperature variation caused by power loss of the intrinsic element, in addition to sense the external environment temperature variation of the intrinsic element, and thus sense the operational temperature of the intrinsic element more precisely. | 09-12-2013 |
20130328614 | DEVICE LAYOUT FOR REFERENCE AND SENSOR CIRCUITS - A band gap reference circuit includes an error-amplifier-based current mirror coupled between a first supply node and a pair of intermediate voltage nodes, and a matched diode pair for providing a proportional-to-absolute temperature (PTAT) current. The matched diode pair includes a first diode connected between a first intermediate voltage node from the pair of intermediate voltage nodes and a second supply node, and a second diode connected in series with a resistor between a second intermediate voltage node from the pair of intermediate voltage nodes and the second supply node. Each diode has a P-N diode junction that is a homojunction. | 12-12-2013 |
20140022002 | THERMAL MANAGEMENT OF TIGHTLY INTEGRATED SEMICONDUCTOR DEVICE, SYSTEM AND/OR PACKAGE - Some implementations provide a semiconductor package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die. The semiconductor package also includes a leakage sensor configured to measure a leakage current of the first die. The semiconductor package also includes a thermal management unit coupled to the leakage sensor. The thermal management unit configured to control a temperature of the first die based, on the leakage current of the first die. | 01-23-2014 |
20140035658 | POWER SEMICONDUCTOR DEVICE MODULE - A power semiconductor device module includes a plurality of inverters, each having a first transistor and a second transistor that are interposed in series between a first potential and a second potential and that operate complementarily. The plurality of inverters are assembled into a module. Only one predetermined inverter of the plurality of inverters is configured to detect temperatures of the first and second transistors, and control terminals for detection of the temperatures of the first and second transistors protrude from sides of the module. | 02-06-2014 |
20140070873 | LOW-POWER RESISTOR-LESS VOLTAGE REFERENCE CIRCUIT - A method for generating a reference voltage is disclosed. The method includes generating a proportional-to-absolute temperature (PTAT) voltage across a first pseudo resistor. The first pseudo resistor includes a transistor. The method also includes converting the PTAT voltage to a current based on a resistance of the first pseudo resistor. The method also includes mirroring the current using a current mirror circuit and converting the mirrored current to the PTAT voltage using a second pseudo resistor. The second pseudo resistor includes a transistor. The first pseudo resistor and the second pseudo resistor include equal transistor types. The method also includes generating a complimentary-to-absolute temperature (CTAT) voltage, and summing the converted PTAT voltage and the CTAT voltage to produce the reference voltage. The resulting reference voltage is temperature independent. | 03-13-2014 |
20140077864 | CIRCUIT FOR PROVIDING A VOLTAGE OR A CURRENT - An electronic circuit for providing a voltage or a current linearly dependent on temperature within a temperature range, including at least two identical MOS transistors conducting the same drain current, each transistor having a fully depleted channel which is separated from a doped semiconductor region by an insulating layer, the conductive types of the dopants of said doped semiconductor regions being different, said voltage or said current being proportional to the difference between the gate-source/drain voltages of the two transistors. | 03-20-2014 |
20140240031 | SYSTEM AND METHOD FOR TUNING A THERMAL STRATEGY IN A PORTABLE COMPUTING DEVICE BASED ON LOCATION - Various embodiments of methods and systems for tuning a thermal strategy of a portable computing device (“PCD”) based on PCD location information. In an exemplary embodiment, it may be recognized that the PCD is in an active state and producing thermal energy, or that one or more thermally aggressive components of the PCD are operating near temperature thresholds for efficient operation. The PCD location information is used to estimate the environmental ambient temperature to which the PCD is exposed. Certain embodiments may simply render the estimated ambient temperature for the benefit of the user or may use the estimated ambient temperature as an input to a program, application, or algorithm running on the PCD. It is envisioned that certain embodiments of the systems and methods may use the estimated ambient temperature to adjust temperature thresholds in the PCD against which thermal management policies govern thermally aggressive PCD components. | 08-28-2014 |
20150364524 | Power Semiconductor Device, Manufacturing Method Therefor, and Method for Operating the Power Semiconductor Device - A power semiconductor device includes a semiconductor body including a first surface, an edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area including at least one of several transistor structures connected in parallel and several diode structures connected in parallel, and a peripheral area arranged between the active area and the edge. The power semiconductor further device includes a plurality of word lines, a plurality of bit lines separated from the word lines, and a plurality of temperature sensors arranged on or at the first surface, wherein each of the temperature sensors is connected with one of the bit lines and one of the word lines or each of the temperature sensors is formed by a respective portion of one of the bit lines. | 12-17-2015 |
20160187901 | TEMPERATURE SENSOR CIRCUIT AND INTEGRATED CIRCUIT - A temperature sensor circuit includes: an output circuit including a first field-effect transistor configured to output a current proportional to temperature when a voltage twice as high as a threshold voltage is applied to a gate of the first field-effect transistor; and a voltage generating circuit configured to generate the voltage twice as high as the threshold voltage by a plurality of field-effect transistors and supply the generated voltage twice as high as the threshold voltage to the gate of the first field-effect transistor. | 06-30-2016 |