| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 324702000 | With radiant energy effects | 10 |
| 20100001747 | METHOD AND A DEVICE FOR MEASURING DIELECTRIC CHARACTERISTICS OF MATERIAL BODIES - The inventive method for measuring dielectric characteristics of material bodies consists in generating a microwave signal, in dividing said signal into reference and sounding signals, in irradiating a body with the microwave signal when a waveguide probe contacts a tested material, in receiving the reflected, reference and total signals and in detecting said signals. The irradiation is carried out by means of a waveguide wave, the propagation number of which in the free space of the waveguide probe, which is filled with a prism-shaped dielectric insert,—“[εk | 01-07-2010 |
| 20100244864 | Method for detecting electromagnetic wave - A method for detecting an electromagnetic wave includes: providing a carbon nanotube structure including a plurality of carbon nanotubes arranged along a same direction. The carbon nanotube structure is irradiated by an electromagnetic wave to be measured. The resistance of the carbon nanotube structure irradiated by the electromagnetic wave is measured. | 09-30-2010 |
| 20110089959 | METHOD AND DEVICE FOR DETERMINING IONIZING RADIATION - A method and device for determining ionizing radiation. The method for determining ionizing radiation comprises the steps of applying a constant voltage across an organic semiconducting material sensor prior to and after exposure of the sensor to the ionizing radiation; measuring and converting the current passing through the sensor proportional to the conductivity or resistivity of the sensor which in turn is proportional to the ionizing radiation in the sensor, into a proportional analog voltage value; and if desired converting the analog voltage value into digital value; and comparing the analog/digital values obtained prior to and after exposure of the sensor to the ionizing radiation and computing the ionizing radiation based on the change in the analog/digital values. The electronic device for determining ionizing radiation comprises an organic semiconductor resistor ( | 04-21-2011 |
| 20120074970 | Resistance Changing Sensor - A sensor configured to experience resistance changes in response to an external interaction is disclosed. The sensor comprises a first layer of a conductive material having a first electrode connected thereto; a second intermediate layer of a material having a resistance sensitive to said external interaction; and a third layer consisting of a first set of fingers interdigitated with a second set of fingers. The first set of fingers has a second electrode attached thereto whilst the second set of fingers has a third electrode attached thereto. The second layer comprises a layer formed of a quantum tunnelling composite. | 03-29-2012 |
| 20130249573 | ELECTRICAL RESISTANCE MEASUREMENT APPARATUS AND ELECTRICAL RESISTANCE MEASUREMENT METHOD - An electrical resistance measurement apparatus includes a light irradiation unit that irradiates a conductive thin film with terahertz light, a reflection light detection unit that detects reflection light from the conductive thin film, and a computer containing a storage that stores correlation between the reflectance of the terahertz light from the conductive thin film and electrical resistance of the conductive thin film. The computer further containing a processor that determines, reflectance of the terahertz light from the conductive thin film based on a result of detection performed by the reflection light detection unit, and determines the electrical resistance of the conductive thin film based on the correlation and a result of the determination of the reflectance. | 09-26-2013 |
| 20140159752 | RAPID ANALYSIS OF BUFFER LAYER THICKNESS FOR THIN FILM SOLAR CELLS - A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell. | 06-12-2014 |
| 324703000 | Including heating | 4 |
| 20100073017 | METHOD FOR OPERATING A HEATABLE EXHAUST GAS PROBE - A method for operating an exhaust gas probe, in particular a lambda probe, in the exhaust gas of an internal combustion engine, where at least one heating element for achieving the operating temperature in the exhaust gas probe and determination of the temperature of the exhaust gas probe is performed by measuring the internal resistance. Measurement of the internal resistance occurs by the superimposition of discrete bipolar test pulses that include a pulse and a counter pulse, and by acquisition of the Nernst voltage. | 03-25-2010 |
| 20100156444 | MICROELECTRONIC DEVICE WITH HEATING ELECTRODES - The invention relates to different designs of a microelectronic device comprising heating electrodes (HE) and field electrodes (FE) that have effect in the same sub-region of a sample chamber. By applying appropriate voltages to the field electrodes (FE), an electrical field (E) can be generated in the sample chamber. By applying appropriate currents to the heating electrodes (HE), the sample chamber can be heated according to a desired temperature profile. The heating electrodes (HE) may optionally be operated as field electrodes such that they generate an electrical field in the sample chamber, too. | 06-24-2010 |
| 20130241582 | ARC RESISTANCE PERFORMANCE EVALUATION DEVICE, ARC RESISTANCE PERFORMANCE EVALUATION SYSTEM, AND ARC RESISTANCE PERFORMANCE EVALUATION METHOD - The present device includes a high frequency induction thermal plasma generation unit | 09-19-2013 |
| 20130257461 | METROLOGY FOR CONTACTLESS MEASUREMENT OF ELECTRICAL RESISTANCE CHANGE IN MAGNETORESISTIVE SAMPLES - A metrology device optically measures the electrical conductivity of a magnetic sample, such as a Tunneling Magnetoresistance (TMR) or Giant-Magneto Resistance (GMR) device, using Time Domain Thermo Reflectance (TDTR) to measure a cooling curve for the sample while a magnetic field is applied to the sample. The thermal conductivity of the sample may be determined using the cooling curve and the variation of the cooling curve with varying applied magnetic fields is measured. The electrical conductivity is determined for the sample in the magnetic field based on the thermal conductivity. If desired, single reflectance changes may be measured at a particular delay after heating, and the reflectance change at this delay may be used to determine the electrical conductivity. Of particular interest is the amount of change in electric conductivity for a given applied magnetic field because this yields a measure of the sensitivity of the sensor. | 10-03-2013 |
