| Entries |
| Document | Title | Date |
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| 20080197780 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a first high frequency power for outputting a first high frequency, electrically connected to a first electrode disposed inside a depressurizable processing chamber; a heater power supply electrically connected to a heating element provided in the first electrode via filter circuits for reducing noise of the first high frequency. The plasma processing apparatus further includes air core primary inductors provided in primary stages of the filter circuits when seen from the heating element; and a grounded conductive case for surrounding or accommodating the primary inductors. | 08-21-2008 |
| 20080203925 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit. | 08-28-2008 |
| 20080218086 | PLASMA GENERATING APPARATUS - A plasma generating apparatus is provided with a plasma generating apparatus for ionizing gas by high frequency discharge within a plasma generating container to thereby generate a plasma and for discharging the plasma to the outside through a plasma discharge hole, an antenna disposed within the plasma generating container for radiating a high frequency wave, an antenna cover made of an insulator and covering a whole of the antenna, a DC voltage measuring device for measuring a DC voltage between the antenna and the plasma generating container, and a comparator for comparing the DC voltage with a reference value, and outputting an alarm signal when an absolute value of the DC voltage value is larger than the absolute value of the reference value. | 09-11-2008 |
| 20080246405 | POWER SUPPLY APPARATUS - A power supply apparatus for controlling an ion accelerator includes a controller configured to adjust magnitude of ion acceleration in the ion accelerator. The controller controls an anode voltage applied to an anode electrode of the ion accelerator, a gas flow rate of gas flowing through a gas flow rate regulator of the ion accelerator, and magnetic flux density at an ion exit of the ion accelerator to satisfy a formula given as follows: | 10-09-2008 |
| 20080265779 | ARRANGEMENT FOR SWITCHING HIGH ELECTRIC CURRENTS BY A GAS DISCHARGE - The present invention is directed to an arrangement for switching high electric currents by way of a gas discharge at high voltages or for generating gas discharge plasma emitting EUV radiation. It is the object of the invention to find a novel possibility for generating a hollow cathode plasma that permits a longer life of the cathodes of short wavelength-emitting gas discharge radiation sources and pseudospark switches, also in high-power operation. This object is met in that the metal wall between the hollow cathode space and the discharge space has a thickness on the order of the centimeter range so that the openings of the metal wall change into relatively long channels and in that substantially radially extending cooling channels are introduced in the metal wall to reduce the ion erosion of the metal wall of the hollow cathode through efficient cooling. | 10-30-2008 |
| 20080272700 | PLASMA GENERATING DEVICE - In the present invention, a plasma generating device is provided for generating a plasma with a uniform intensity. The plasma generating device comprises at least a first antenna to transmit the first electromagnetic wave, at least a second antenna to transmit the second electromagnetic wave, and an insulator defining an isolated space for containing therein the first antenna and the second antenna, wherein the first antenna has an opposite orientation with respect to the second antenna, so that the first electromagnetic wave and the second electromagnetic wave are transmitted in opposite directions. The first and the second electromagnetic waves can be coupled with each other to produce a uniform standing wave pattern. Consequently, a large size uniform plasma can be generated. | 11-06-2008 |
| 20090001889 | METHOD AND APPARATUS FOR REMOTELY MONITORING PROPERTIES OF GASES AND PLASMAS - A method and apparatus for remotely monitoring properties of gases and plasmas is disclosed. A laser beam is focused at a desired region within a gas or plasma to be analyzed, generating an ionized sample region in the gas or plasma. A beam of microwave radiation is directed toward the ionized sample region, and a portion of the microwave radiation is scattered by the ionized sample region and Doppler-shifted in frequency. The scattered, frequency-shifted microwave radiation is received by a microwave receiver, and is processed by a microwave detection system to determine properties of the gas or plasma, including velocities, temperatures, concentrations of molecular species, and other properties of the gas or plasma. | 01-01-2009 |
| 20090001890 | Apparatus for Plasma Processing a Substrate and a Method Thereof - An apparatus for processing a substrate includes a pulsed power supply that generates a waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a first plasma during the first period and a second plasma during the second period. The first plasma may have higher plasma density than the second plasma. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage and a second voltage may be coupled to the substrate. The first voltage may have more negative potential than the second voltage. | 01-01-2009 |
| 20090009090 | Device for Plasma Treatment at Atmospheric Pressure | 01-08-2009 |
| 20090026963 | SURFACE WAVE EXCITATION PLASMA GENERATOR AND SURFACE WAVE EXCITATION PLASMA PROCESSING APPARATUS - The present invention provides a surface wave excitation plasma generator in which surface wave excitation plasma is efficiently generated. A surface wave excitation plasma generator including an annular waveguide and a dielectric tube is provided. The annular waveguide | 01-29-2009 |
| 20090026964 | High Frequency Power Supply - For determining a wave running time between a RF source in a plasma power supply device and a load connected to the plasma power supply device, an RF pulse is transmitted forwards from the RF source to the load. The pulses are reflected by the load and transmitted backwards to the power source. A return time measured on arrival of the pulse(s) at the inverter is used to determine a wave running time. | 01-29-2009 |
| 20090039789 | Cathode assembly and method for pulsed plasma generation - A cathode assembly and a method for generation of pulsed plasma are disclosed. The cathode assembly comprises a cathode holder connected to multiple longitudinally aligned cathodes, preferably of the same diameter, and different lengths. The method is characterized by forming an electric arc between the cathodes in the assembly and an anode by passing DC current of a predetermined magnitude. Once the arc is established the current is reduced to the magnitude sufficient to sustain an electric arc, or a slightly larger magnitude, thereby reducing the area of arc attachment to a single cathode. Once the area of attachment has been reduced, the current is raised to the operational level of the pulse, while the area of attachment does not increase significantly. | 02-12-2009 |
| 20090039790 | Pulsed plasma device and method for generating pulsed plasma - A device and a method for generating a truly pulsed plasma flow are disclosed. The device includes a cathode assembly comprising a cathode and a cathode holder, an anode, and two or more intermediate electrodes, the anode and the intermediate electrodes forming a plasma channel expanding toward the anode. The intermediate electrode closest to the cathode may form a plasma chamber around the cathode tip. An extension nozzle forming an extension channel having a tubular insulator along at least a portion of its interior surface is affixed to the anode end of the device. | 02-12-2009 |
| 20090045749 | PLASMA GENERATING APPARATUS AND PLASMA TREATMENT APPARATUS - A plasma generating apparatus according to the invention includes coaxial conversion means for coaxial-converting a microwave, a generally annular ring slot for passing the coaxial-converted microwave, and a dielectric window for propagating the microwave passed through the ring slot, wherein a plasma can be produced by the microwave propagated through the dielectric window. This enables stable formation of a plasma having a uniform distribution over a large area. | 02-19-2009 |
| 20090058304 | Inductively-Coupled RF Power Source - A system and method are disclosed for implementing a power source including a power amplifier that generates a radio-frequency power signal with an adjustable operating frequency. The power amplifier also generates a reference phase signal that is derived from the radio-frequency power signal. An impedance match provides the radio-frequency power signal to a plasma coil that has a variable resonance condition. A phase probe is positioned adjacent to the plasma coil to generate a coil phase signal corresponding to the adjustable operating frequency. A phase-locked loop then generates an RF drive signal that is based upon a phase relationship between the reference phase signal and the coil phase signal. The phase-locked loop provides the RF drive signal to the power amplifier to control the adjustable operating frequency, so that the adjustable operating frequency then tracks the variable resonance condition. | 03-05-2009 |
| 20090066256 | Solid Expellant Plasma Generator - An improved solid expellant plasma generator has been developed. The plasma generator includes a support housing, an electrode rod located in the central portion of the housing, and a mass of solid expellant material that surrounds the electrode rod within the support housing. The electrode rod and the solid expellant material are made of separate materials that are selected so that the electrode and the solid expellant material decompose at the same rate when the plasma generator is ignited. This maintains a point of discharge of the plasma at the interface between the electrode and the solid expellant material. | 03-12-2009 |
| 20090102385 | CAPACITIVELY COUPLED PLASMA REACTOR - A capacitively coupled plasma reactor includes a plasma reactor, a capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes to induce plasma discharge inside the plasma reactor, a main power supply source to supply radio-frequency power, and a distribution circuit to receive the radio-frequency power supplied from the main power supply source and to distribute the received radio-frequency power to the plurality of capacitive coupling electrodes. | 04-23-2009 |
| 20090108759 | High effficiency and high bandwidth plasma generator system for flow control and noise reduction - A plasma generation system includes a pulse generator having at least one switch and that is configured to convert a DC voltage to a desired high frequency, high breakdown voltage pulse sufficient to break down a high-breakdown voltage gap, wherein all pulse generator switches are solely low to medium voltage, high frequency switches, and further configured to apply the breakdown voltage to a plasma load for the generation of plasma. In one application, the plasma generation system is useful to manipulate the flow of jets and provide highly efficient acoustic noise reduction. | 04-30-2009 |
| 20090121637 | Plasma Generator - A plasma generator, comprising a dielectric tube having a first end and a second end, wherein the first end is sealed, but for a gas inlet; at least one first dielectric disk located within the dielectric tube, wherein the first dielectric disk includes at least one first dielectric aperture formed therein; a first ring electrode that at least partially surrounds the at least one first dielectric aperture and is electrically coupled to a power supply; at least one second dielectric disk located proximate the second end of the dielectric tube, wherein the second dielectric disk includes at least one second dielectric aperture formed therein; and a second ring electrode that at least partially surrounds the at least one second dielectric aperture and is electrically coupled to the power supply. During use, the plasma generator produces at least one plasma plume that is launched into open air. | 05-14-2009 |
| 20090121638 | Cold air atmospheric pressure micro plasma jet application nethod and device - A microhollow cathode discharge assembly capable of generating a low temperature, atmospheric pressure plasma micro jet is disclosed. The microhollow assembly has at two electrodes: an anode and a cathode separated by a dielectric. A microhollow gas passage is disposed through the three layers, preferably in a taper such that the area at the anode is larger than the area at the cathode. When a potential is placed across the electrodes and a gas is directed through the gas passage into the anode and out the cathode, along the tapered direction, then a low temperature micro plasma jet can be created at atmospheric pressure. Selection of gas microhollow geometry and operational characteristics enable the application of the assembly to low temperature treatments, including the treatment of living tissue. | 05-14-2009 |
| 20090128041 | Microwave Plasma Generation Method and Microwave Plasma Generator - A microwave plasma generator in which the generating amount of radicals can be regulated easily with higher reaction efficiency while reducing gas consumption. The microwave plasma generator comprises an outer conductor ( | 05-21-2009 |
| 20090134803 | Plasma device with low thermal noise - A plasma device having low thermal noise, which results in a high signal-to-noise ratio (SNR) of the plasma device. The plasma device includes devices with a plasma that is responsive to electromagnetic radiation and/or electrical signals. In various configurations, the plasma device has a plasma in which the temperature, resistance, pressure, and/or collision frequency are at a level sufficiently low to produce an acceptable level of noise. In another configuration, the operating frequency of the plasma device is at a level sufficiently high to produce an acceptable level of noise. Decreasing the noise level results in increasing the signal-to-noise ratio and increasing the data rate. The plasma temperature is reduced by operating the plasma device in the afterglow state. The plasma electron temperature is reduced by confining high energy electrons in a potential well and by using an electron emitting filament. | 05-28-2009 |
| 20090153060 | RF plasma source with quasi-closed solenoidal inductor - The present invention pertains to RF (radio frequency) inductive coupling plasma (ICP) sources exciting and maintaining plasma within a closed and vacuum sealed discharge chamber filled with a gaseous medium at a controllable pressure in the range from 1 mTorr to atmospheric pressure. The inductively couple plasma source of the present invention includes a radio frequency source, a quasi-closed O-type solenoidal inductor comprised of two equal section U-shaped solenoid coil halves separated from one another to form two operating gaps between aligned spaced ends of the solenoid coil halves. Each of the U-shaped halves of the solenoid coil is sectioned to have an electrical midpoint connected to the radio frequency source and the distal outer ends of the solenoid coils, which correspond to the aforesaid aligned spaced ends of the quasi-closed solenoidal inductor, are connected to ground. A metallic housing having a discharge chamber therein is provided with two opposed walls having symmetrically opposed bone shaped ports. The ports are closed and vacuum sealed with insulating material and the ports each include two through side openings dimensionally respectively fitted to and engaging with the spaced ends of the quasi-closed solenoidal inductor. The bone shaped ports further include a through slot connecting the side openings along their center line for inductive excitation and maintenance of plasma in the operating gaps situated within the discharge chamber. | 06-18-2009 |
| 20090200948 | LARGE AREA, ATMOSPHERIC PRESSURE PLASMA FOR DOWNSTREAM PROCESSING - An arcless, atmospheric-pressure plasma generating apparatus capable of producing a large-area, temperature-controlled, stable discharge at power densities between about 0.1 W/cm | 08-13-2009 |
| 20090206757 | PLASMA REACTOR AND PLASMA REACTION APPARATUS - A plasma reactor includes a honeycomb electrode in which a plurality of cells that function as gas passages are partitioned by a partition wall, and a discharge electrode. The honeycomb electrode includes a first gas circulation section that allows a first gas to pass through, and a second gas circulation section that allows a second gas to pass through. The plasma reactor causes the first gas introduced into the first gas circulation section of the honeycomb electrode through the space between the electrodes to undergo a reaction while causing a plasma discharge between the honeycomb electrode and the discharge electrode, and allows the second gas to be introduced into the second gas circulation section of the honeycomb electrode to transfer heat of the second gas to the first gas circulation section to promote the reaction of the first gas. | 08-20-2009 |
| 20090284156 | METHOD AND APPARATUS FOR PULSED PLASMA PROCESSING USING A TIME RESOLVED TUNING SCHEME FOR RF POWER DELIVERY - Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network. | 11-19-2009 |
| 20090295295 | PLASMA REACTOR WITH HIGH SPEED PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF DIFFERENT UNMATCHED FREQUENCY SOURCES - Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic. | 12-03-2009 |
| 20090295296 | METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance. | 12-03-2009 |
| 20090309499 | OPTIMIZATION OF THE EXCITATION FREQUENCY OF A RESONATOR - A radio frequency plasma generator power supply, including: an interface that receives a request to determine an optimal control frequency; an output interface configured to be connected to a plasma generation resonator; a power supply module configured to apply a voltage at a set point frequency to the output interface, the voltage, depending on its frequency, selectively unable to allow generation of plasma of the resonator on receipt of a request during a phase optimizing power supply frequency of the generator and able to allow generation of plasma of the resonator during an operating phase; an interface that receives an electrical measurement of power supply of the resonator; a module that determines optimal control frequency, successively provides various set point frequencies to the power supply module on receipt of a request, and determines an optimal control frequency depending on electrical measurements received by the reception interface. | 12-17-2009 |
| 20090315463 | Phase And Frequency Control Of A Radio Frequency Generator From An External Source - Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator. | 12-24-2009 |
| 20100001647 | Method and Device for Igniting and Generating an Expanding Diffuse Microwave Plasma and Method and Device for Plasma Treating Surfaces and Substances by Using This Plasma - The invention relates to a method for igniting and generating an expanding diffuse microwave plasma and to a device for carrying out such a method. The method is particularly suited for generating microwave plasmas for the purpose of carrying out plasma treatment of surfaces and substances, particularly three-dimensional objects as well as particles under atmospheric pressure. The aim of the invention is to provide a method for igniting and generating these plasmas that is, particularly under normal and high pressure, easy and operationally safe as well as, in principle, carried out without a flow of gas. The invention also relates to a method and device for carrying out plasma treatment of surfaces and substances by means of such a plasma, which makes an effective plasma treatment possible due to its high stability with regard to plasma generation and maintenance, low gas consumption and a high plasma volume. To this end, a plasma ignition ensues inside a wave-bound hollow structure by means of microwave launching over a resonant igniting structure, a simultaneous impelling of the plasma through the resonant igniting structure, however, is not possible. The ignited plasma is supplied with energy via a surrounding microwave field so that an expanding diffuse plasma forms. A particular embodiment in a coaxial arrangement makes it possible to generate a plasma exiting the device for the purpose of carrying out mobile plasma treatment. | 01-07-2010 |
| 20100019677 | PLASMA PRODUCING APPARATUS AND METHOD OF PLASMA PRODUCTION - For production of plasma from a medium gas mass in an elongated shape, electric field forming elements | 01-28-2010 |
| 20100026186 | POWER SUPPLY IGNITION SYSTEM AND METHOD - One embodiment comprises a plasma processing system having a plasma chamber, a generator, a feedback component, and a controller. The feedback component is adapted to receive at least one first signal having a level dependent upon the power signal supplied from the generator to the chamber. A feedback output is adapted to emit a second signal to the controller, which is adapted to supply a third signal to the power generator. The third signal is configured to control the power generator to supply the power signal at a power level for a particular processing application. The power generator is further controlled by the controller to one of reduce and remove power from the plasma processing chamber and subsequently increase the voltage level until the power level reaches a threshold level. The power generator is further controlled to subsequently modulate the voltage until the voltage returns to a first voltage level. | 02-04-2010 |
| 20100033096 | Atmospheric pressure plasma apparatus - Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated. | 02-11-2010 |
| 20100039036 | INITIATION METHOD FOR ABNORMAL GLOW PLASMA DISCHARGE IN A LIQUID-PHASE MEDIUM AND APPARATUS FOR ITS IMPLEMENTATION - A method and apparatus for initiating and maintaining an abnormal glow volumetric sonoplasma discharge (VSPD). With certain parameters of the electrical discharge and of the intensity of elastic vibrations, it is possible to initiate VSPD within a cavitating liquid medium. The mechanism for the initiation of VSPD is related to the breakdown of gas phase microchannels formed by growth cavitation bubbles. The method for continuous processing uses elastic vibrations in the frequency range 1-100 kHz with enough intensity for the development of cavitation phenomena; these vibrations are introduced into the liquid phase working medium, and a source of direct, alternating, high frequency and ultrahigh frequency electric field in liquid provides the initiation and stable glow of VSPD. Resulting VSPD is characterized by volumetric glow in the frequency range of visible light and ultraviolet radiation in the entire cavitational-electric field and has a rising volt-ampere characteristic curve. | 02-18-2010 |
| 20100052539 | PORTABLE MICROWAVE PLASMA GENERATOR CAPABLE OF GENERATING PLASMA WITH LOW ELECTRIC POWER - There is provided a small-sized portable microwave plasma generator capable of generating plasma at atmospheric pressure with low electric power including a coaxial cable, an outer conductor, a connection conductor, and a connection member. The coaxial cable includes a first inner conductor and a dielectric material encircling the first inner conductor. The outer conductor encircles the coaxial cable. The connection conductor includes at least one gas inlet tube. The connection conductor electrically connects between the first inner conductor and the outer conductor at one end of the coaxial cable. The connection member includes a second inner conductor passing through the outer conductor and then connecting to the first inner conductor. | 03-04-2010 |
| 20100079073 | Pulsed dielectric barrier discharge - A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract. | 04-01-2010 |
| 20100102728 | PLASMA JET IGNITION PLUG AND IGNITION DEVICE FOR THE SAME - The cavity of a plasma jet ignition plug is configured in a stepped shape; i.e., composed of a constricted portion and a diameter-increased portion ( | 04-29-2010 |
| 20100127624 | Method and Apparatus for Multibarrier Plasma Actuated High Performance Flow Control - Embodiments of the invention relate to a method and apparatus for plasma actuated high performance flow control. A specific embodiment of a plasma actuator can incorporate a power source; a first electrode in contact with a first dielectric layer and connected to the power source; a second electrode in contact with a second dielectric layer and connected to the power source; and a ground electrode. The power source drives the first electrode with a first ac voltage pattern with respect to the ground electrode and drives the second electrode with a second ac voltage pattern with respect to the ground electrode such that application of the first voltage pattern produces a first plasma discharge in a flow region, and a first electric field pattern in the flow region, and application of the second voltage pattern produces a second plasma discharge in the flow region and a second electric field pattern in the flow region. The first and second electrodes are offset along the direction of flow in the flow region and the first voltage pattern and the second voltage pattern have a phase difference such that the first and second electric fields drive flow in the flow region in different portions of the flow region at different times. | 05-27-2010 |
| 20100141147 | CAPACITIVELY COUPLED PLASMA (CCP) GENERATOR WITH TWO INPUT PORTS - A capacitively coupled plasma (CCP) generator with two input ports, which is especially used as a large-area capacitively coupled plasma (CCP) generator. In the inventive CCP generator, only a RF power supply is required to provide the two input ports with RF power. The input impedance at each of the input ports is adjustable so that the standing wave between two rectangular electrodes can be eliminated to achieve plasma uniformity. | 06-10-2010 |
| 20100171427 | Protecting High-Frequency Amplifers - In one aspect, protecting high frequency (HF) amplifiers of a plasma supply device configured to deliver >500 W at a substantially constant fundamental frequency >3 MHz is accomplished by: driving two HF amplifiers with two drive signals having a common frequency and a predetermined phase shift with respect to one another; generating two HF source signals using the HF amplifiers, the HF source signals coupled in a coupler to form a HF output signal; transmitting the HF output signal to the plasma load; measuring electrical variables related to the load impedances seen by the two HF amplifiers; determining whether the load impedance seen by one of the HF amplifiers lies outside a predetermined range; and adjusting the phase shift of the two drive signals, wherein neither of the load impedances seen by the HF amplifiers lies outside the predetermined range. | 07-08-2010 |
| 20100171428 | DRIVING SWITCHES OF A PLASMA LOAD POWER SUUPLY - Operation of a plasma supply device having at least one switching bridge with at least two switching elements, and configured to deliver a high frequency output signal having a power of >500 W and a substantially constant fundamental frequency>3 MHz to a plasma load is accomplished by determining at least one operating parameter, at least one environmental parameter of at least one switching element and/or a switching bridge parameter, determining individual drive signals for the switching elements taking into account the at least one operating parameter, the at least one environmental parameter and/or the switching bridge parameter, and individually driving the switching elements with a respective drive signal. | 07-08-2010 |
| 20100187998 | ABNORMAL DISCHARGE SUPPRESSING DEVICE FOR VACUUM APPARATUS - The present invention is directed to an apparatus for suppressing abnormal electrical discharge used for vacuum equipment which supplies power from a high-frequency power source to a plasma reaction chamber and executes a film formation process, provided with a power controller for controlling the high-frequency power source based on a deviation between a power command value and a power feedback value, and a cutoff controller for cutting off the power supply from the high-frequency power source to the plasma reaction chamber, based on a detection of the abnormal electrical discharge within the plasma reaction chamber. The cutoff controller exercises a first handling cutoff control and a second handling cutoff control, each having a different cutoff time. The first handling cutoff allows ions to remain in the plasma reaction chamber, and exercises the cutoff control over the high-frequency power source within a time duration which allows an arcing element to disappear. On the other hand, the second handling cutoff control exercises cutoff control over the high-frequency power source within a time range which allows abnormal arc ions to disappear. Accordingly, it is possible to supply power to plasma stably. | 07-29-2010 |
| 20100194278 | Flow manipulation with micro plasma - The embodiments of the present invention apply the RF or microwave energy on electrically conductive traces and waveguide structures to excite micro plasma, and the micro plasma is manipulated to drive the micro fluid flow. The micro fluid flow is used to cool down electronic device, or used for the applications of gas fluid transportation, gas fluid mixture, and gas fluid reaction. | 08-05-2010 |
| 20100194279 | CONTROL OF A PLURALITY OF PLUG COILS VIA A SINGLE POWER STAGE - A radiofrequency plasma generating device including: a supply circuit including a switch controlled by a control signal for applying a voltage on an output of the control circuit at a control frequency; at least two plasma-generating circuits connected in parallel at the output of the supply circuits, each circuit having its own resonance frequency and being capable of generating plasma when a high voltage level is applied to the output of the supply circuit at a frequency substantially equal to the resonance frequency of the plasma generation circuit; and a supply control device determining the control frequency from the resonance frequencies of the plasma generation circuits to selectively control each circuit according to the control frequency used. | 08-05-2010 |
| 20100201271 | DC ARC PLASMATRON AND METHOD OF USING THE SAME - The present invention concerns a DC arc plasmatron which is a plasma generator at the atmospheric pressure having a structure suitable for improving chemical activity of plasma. | 08-12-2010 |
| 20100201272 | Plasma generating system having nozzle with electrical biasing - The present invention provides a plasma generating system that includes: a microwave generator for generating microwave energy; a power supply connected to the microwave generator for providing power thereto; a microwave cavity; a waveguide operatively connected to the microwave cavity for transmitting microwave energy thereto; an isolator for dissipating microwave energy reflected from the microwave cavity; and at least one nozzle coupled to the microwave cavity. The nozzle includes: a housing having a generally cylindrical space formed therein, the space forming a gas flow passageway; a rod-shaped conductor disposed in the space and operative to transmit microwave energy along a surface thereof so that the microwave energy excites gas flowing through the space; and a biasing device for providing a bias potential between the rod-shaped conductor and a bias electrode structure wherein the bias electrode structure is offset in potential from ground. | 08-12-2010 |
| 20100207528 | PORTABLE POWER SUPPLY APPARATUS FOR GENERATING MICROWAVE-EXCITED MICROPLASMAS - Provided is a portable power supply apparatus for generating microwave plasma, capable of minimizing a power reflected from a plasma generation apparatus and improving power consumption of the plasma generation apparatus by generating the plasma by using a microwave having a specific frequency, monitoring the power reflected from the plasma generation apparatus after the generation of the plasma, detecting a changed impedance matching condition, and correcting the frequency. | 08-19-2010 |
| 20100225234 | Hollow-cathode plasma generator - A hollow-cathode plasma generator includes a plurality of hollow cathodes joined together and connected to a power supply for generating plasma in vacuum. Each of the hollow cathodes includes at least one fillister defined therein, a fin formed on a side of the fillister, an air-circulating tunnel in communication with the fillister and a coolant-circulating tunnel defined therein. The fillister is used to contain working gas. The fin receives negative voltage from the power supply for ionizing the working gas to generate the plasma and spread the plasma in a single direction. The working gas travels into the fillister from the air-circulating tunnel. The coolant-circulating tunnel is used to circulate coolant for cooling the hollow cathode. | 09-09-2010 |
| 20100301753 | APPLICATOR OF MICROWAVE PLASMA GENERATOR AND MICROWAVE PLASMA GENERATOR INCLUDING THIS APPLICATOR - The microwave plasma generator is applied to transmission of electromagnetic field into plasma. The invention consists of the fact that the guiding part ( | 12-02-2010 |
| 20100308730 | Method and device for creating a micro plasma jet - A microhollow cathode discharge assembly capable of generating a low temperature, atmospheric pressure plasma micro jet is disclosed. The microhollow assembly has two electrodes: an anode and a cathode separated by a dielectric. A microhollow gas passage is disposed through the three layers. In some embodiments, the passage is tapered such that the area at the first electrode is larger than the area at the second electrode. When a potential is placed across the electrodes and a gas is directed through the gas passage, then a low temperature micro plasma jet can be created at atmospheric pressure or above. | 12-09-2010 |
| 20100320915 | Flourescent lighting system - Methods and apparatus for providing a Fluorescent Lighting System are disclosed. In one embodiment, the present invention may be used as a fluorescent lamp ballast which is controlled using a non-resonant circuit that allows the ballast to lower to fifty percent the light output of the lamp while providing a corresponding fifty percent reduction in energy used. | 12-23-2010 |
| 20100320916 | Plasma Generator and Discharge Device and Reactor Using Plasma Generator - A plasma generator has a first member | 12-23-2010 |
| 20100327749 | Controlled Plasma Power Supply - A plasma power supply system for producing electrical power in the range between 1 kW and 100 kW for a plasma processing system and supplying the power to a plasma chamber through a power line connection, the plasma power supply system includes a power converter, a monitoring section, an arc diverter, a control section with an arc diverter control section and an arc detection section, and an input device wherein the input device is connected to the arc diverter. | 12-30-2010 |
| 20110001429 | Three-dimensional display system - A three-dimensional display system is provided which promises to project an image into a volume. The three-dimensional display system produces visible light in a volume at the intersection of two laser beams by forming a plasma at a volume element within the volume and exciting target molecules within the plasma into an excited energy state. The target molecules are characterized by sufficiently sizeable energy state transitions such that visible light is emitted upon transition of the target molecules from an excited energy state to a lower energy state. By rapidly repeating this process according to three-dimensional image data, one or more embodiments of the present invention is able to project a three-dimensional image into a volume without many of the drawbacks of earlier machines. | 01-06-2011 |
| 20110001430 | ELECTRODE DEVICE AND APPARATUS FOR GENERATING PLASMA - Provided are an electrode device and an apparatus for generating plasma. The electrode device for generating plasma includes: a planar member disposed to face a susceptor supporting a substrate and generating plasma between the substrate and the planar member; and a linear member providing a high frequency signal to the planar member via a plurality of feeding points that are electrically connected to the planar member and allowing admittance to be reduced as the linear member is closer to the feeding points on a path from supply points at which the high frequency signal is supplied to the linear member, to each of the feeding points, wherein the linear ember includes a connection unit, the connection unit including: a first member connecting two feeding points from among four feeding points disposed adjacent to one another in a straight line and is disposed to be separated from a plane that includes the straight line in which the feeding points are formed and forms a predetermined angle with the planar member; and a second member connecting two feeding points to which the first member is not connected, from among the four feeding points and is disposed symmetrical with the first member with respect to the plane that includes the straight line in which the feeding points are formed. | 01-06-2011 |
| 20110006687 | METHOD AND GENERATOR CIRCUIT FOR PRODUCTION OF PLASMA BY MEANS OF RADIO-FREQUENCY EXCITATION - Method and generator circuit for generating plasmas by means of radiofrequency excitation | 01-13-2011 |
| 20110018443 | PLASMA GENERATING APPARATUS - A plasma generating apparatus includes a chamber, a slow wave antenna and an electromagnetic wave generator. The chamber has an accommodating space. The slow wave antenna has a central conductive tube passing through the accommodating space, and a dielectric tube arranged around the central tube. The electromagnetic wave generator is used for coupling electromagnetic wave into the slow wave antenna. An electromagnetic wave transmitted by the electromagnetic wave generator can pass through the slow wave antenna and radiate into the accommodating space. | 01-27-2011 |
| 20110018444 | TRANSIENT PLASMA BALL GENERATION SYSTEM AT LONG DISTANCE - The invention concerns a new device based on very short pulsed discharges, generating plasmas balls and plumes over very long distances (up to several meters). These plasma balls are travelling in dielectric guide at the end of which there is generation of an apparent plasma plume like zone (which shape and intensity depend on the discharge repetition rate) wherein secondary mixture plasma can be produced close to a given surface by adding other gas fluxes in the main gas stream. The plasmas balls can be generated in gases at a repetition rate in the range from single shot to multi-kilohertz. | 01-27-2011 |
| 20110025210 | PLASMA APPARATUS USING A CYLINDER HEAD - Provided is a plasma apparatus using a cylinder head, which comprises a discharge device installed with an electrode exposed to the combustion chamber and installed in the cylinder head, an antenna installed to protrude from the cylinder head into the combustion chamber, a bulging portion bulging from the cylinder head to the combustion chamber so as to cover the antenna, made from insulator or dielectric, an electromagnetic wave transmission line installed in the cylinder head and with one end connected to the antenna and the other end, covered with insulator or dielectric, penetrating the cylinder head to extend to an outer wall of the cylinder head, and an electromagnetic wave generator for feeding electromagnetic waves to the electromagnetic wave transmission line. At compression stroke, discharge is generated with the electrode of the discharge device and the electromagnetic waves, fed from the electromagnetic wave generator through the electromagnetic wave transmission line, are radiated from the antenna. | 02-03-2011 |
| 20110031886 | PLASMA APPARATUS USING A VALVE - Provided is a plasma apparatus using a valve, which comprises a discharge device with an electrode exposed to the combustion chamber installed in a cylinder head, an antenna installed on the valve face of a valve head, an electromagnetic wave transmission line installed in a valve stem with one end connected to the antenna and the other end covered with an insulator or dielectric and extending to a power-receiving portion positioned at a location fitting into the guide hole in the valve stem, and an electromagnetic wave generator for feeding an electromagnetic waves to the power-receiving portion. At the compression stroke when the combustion chamber side opening of an intake port or an exhaust port is closed with the valve head, discharge is generated with the electrode of the discharge device and the electromagnetic waves fed from the electromagnetic wave generator through the electromagnetic wave transmission line are radiated from the antenna. | 02-10-2011 |
| 20110068690 | Plasma jet guard - The system includes a method and means of technological defense against violent atmospheric cyclones: tornadoes, hurricanes, others. The controlled meteorological missiles equipped with rocket servo-motors and magneto-gas-dynamic ionizers are used. | 03-24-2011 |
| 20110080093 | Apparatus and Method for Regulating the Output of a Plasma Electron Beam Source - An apparatus and method for controlling electron flow within a plasma to produce a controlled electron beam is provided. A plasma is formed between a cathode and an acceleration anode. A control anode is connected to the plasma and to the acceleration anode via a switch. If the switch is open, the ions from the plasma flow to the cathode and plasma electrons flow to the acceleration anode. With the acceleration anode suitably transparent and negatively biased with a DC high voltage source, the electrons flowing from the plasma are accelerated to form an electron beam. If the switch is closed, the ions still flow to the cathode but the electrons flow to the control anode rather than the acceleration anode. Consequently, the electron beam is turned off, but the plasma is unaffected. By controlling the opening and closing of the switch, a controlled pulsed electron beam can be generated. | 04-07-2011 |
| 20110080094 | RADIO-FREQUENCY ANTENNA UNIT AND PLASMA PROCESSING APPARATUS - The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber. | 04-07-2011 |
| 20110095688 | Apparatus for Producing Plasma - An apparatus for producing plasma, includes a container provided with at least one discharge electrode and a power supply unit that has at least one coupling electrode that can be capacitively coupled to the discharge electrode. The power supply unit is adapted to be removable from the container. The at least one coupling electrode is disposed beneath an insulating layer. In this way, the user can not come into direct contact with a coupling electrode after removing the power supply unit. | 04-28-2011 |
| 20110101862 | System and methods for plasma application - The present disclosure provides for a plasma system. The plasma system includes a plasma device, an ionizable media source, and a power source. The plasma device includes an inner electrode and an outer electrode coaxially disposed around the inner electrode. The inner electrode includes a distal portion and an insulative layer that covers at least a portion of the inner electrode. The ionizable media source is coupled to the plasma device and is configured to supply ionizable media thereto. The power source is coupled to the inner and outer electrodes, and is configured to ignite the ionizable media at the plasma device to form a plasma effluent having an electron sheath layer about the exposed distal portion. | 05-05-2011 |
| 20110109226 | MICROPLASMA DEVICE WITH CAVITY FOR VACUUM ULTRAVIOLET IRRADIATION OF GASES AND METHODS OF MAKING AND USING THE SAME - An illumination device provides light to a flowing gaseous sample. The device includes a structure including a cavity configured to have a microplasma disposed therein. The cavity substantially encircles a cross-section of a channel that is configured to pass the flowing gaseous sample therethrough. The cavity is defined in part by an interior wall of the structure separating the cavity from the channel. The interior wall includes at least one orifice passing therethrough configured to provide to the flowing gaseous sample light generated by the microplasma. At least one electrode is configured to supply energy to the microplasma within the cavity. | 05-12-2011 |
| 20110109227 | Target Exchange Type Plasma Generating Apparatus - The objective of the present invention is to provide a target exchange type plasma generating apparatus in which the positions of two targets can be adjusted independent of each other. A target exchanging mechanism ( | 05-12-2011 |
| 20110115378 | PLASMA SOURCE DESIGN - Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region. | 05-19-2011 |
| 20110115379 | CURRENT CONTROL IN PLASMA PROCESSING SYSTEMS - A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current. | 05-19-2011 |
| 20110121735 | TISSUE RESURFACING - In an electonic key associated with a device for skin treatment there is a housing and an integrated circuit, the integrated circuit is positioned within the housing, wherein the device for treating human tissue comprises a surgical instrument having a gas conduit terminating in a plasma exit nozzle, and an electrode associated with the conduit, and a radio frequency power generator coupled to the instrument electrode and arranged to deliver radio frequency power to the electrode in single or series of treatment pulses for creating a plasma from gas fed through the conduit, the pulses having durations in the range of from 2 ms to 100 ms. | 05-26-2011 |
| 20110133650 | APPARATUS FOR GENERATING PLASMA - An apparatus for generating plasma is provided. The apparatus may include a vacuum chamber and a plasma source part. The plasma source part may include a dielectric part, an upper electrode, and an inductive coil. The dielectric part may be installed to protrude upward along a circumference of a through-hole provided at a top of the vacuum chamber. The upper electrode may be coupled to seal an opened top of the dielectric part. The inductive coil may spirally extend along an outer circumference surface of the dielectric part. | 06-09-2011 |
| 20110140607 | SYSTEM, METHOD AND APPARATUS FOR GENERATING PLASMA - A plasma generating system, related method and device are disclosed. The plasma generation system includes a plasma generation device, a source of ionizable gas and a driver network. The plasma generation device includes a housing, an electrode, and a resonant circuit. The housing includes a passage defined therein and directs a flow of ionizable gas therethrough. The electrode is coupled to the ionizable gas flowing through the passage of the housing. The resonant circuit includes a capacitor and an inductor connected together in series. The resonant circuit has a resonance frequency and is coupled to the electrode. The resonant circuit receives an AC signal. The driver network provides the AC signal such that the AC signal has a frequency and excites the ionizable gas flowing through the passage of the housing to a plasma. | 06-16-2011 |
| 20110148303 | EFFICIENT ACTIVE SOURCE IMPEDANCE MODIFICATION OF A POWER AMPLIFIER - A system, method, and apparatus for stabilizing interactions between an electrical generator and a nonlinear load are described. One illustrative embodiment includes an impedance element that is coupled to an output of the generator and a power source coupled to the impedance element. The power source applies power to, or across, the impedance element so as to reduce energy loss that would ordinarily occur due to energy dissipation by way of the impedance element. In many variations, the power source operates within a defined bandwidth so that a stabilizing effect is achieved outside of this bandwidth. | 06-23-2011 |
| 20110163673 | DEVICE FOR GENERATING RADIOFREQUENCY PLASMA - A device for generating a radiofrequency plasma, that includes a voltage generator, and at least one ignition assembly that includes an ignition plug and a switch provided between a supply terminal of the plug and an output of the generator adapted for electrically connecting the output of the voltage generator to the plug upon reception of a control signal, and an electronic control unit generating the control signal. The electronic control unit measures values representative of evolution in time of the output voltage of the generator. The device further includes a mechanism varying the voltage and/or the frequency of the electric current applied to the supply terminal of the plug based on measured values. The evolution of the generator output voltage is representative of the condition of the plug (new or used). | 07-07-2011 |
| 20110175531 | PLASMA GENERATION DEVICE WITH SPLIT-RING RESONATOR AND ELECTRODE EXTENSIONS - A plasma generation device includes: a substrate having a first surface and a second surface; a stripline resonant ring disposed on the first surface of the substrate, and defining a discharge gap; a pair of electrode extensions connected to the stripline resonant ring at the discharge gap; a ground plane disposed on the second surface of the substrate; a gas flow element configured to flow gas between at least one of: (1) the discharge gap, and (2) the pair of electrode extensions; and a structure disposed adjacent the substrate to form an enclosure that substantially encloses at least a region including the discharge gap and the electrode extensions, the enclosure being adapted to contain a plasma. | 07-21-2011 |
| 20110193483 | Methods for Inductively-Coupled RF Power Source - A method for tracking a variable resonance condition in a plasma coil during creation of plasma from a gas flowing in a plasma torch adjacent to the plasma coil comprises: providing a radio-frequency (RF) power source comprising a power amplifier that generates a radio-frequency power signal with an adjustable operating frequency; providing a high-voltage ignition charge from said RF power source to the gas in plasma torch so as to create an electrical discharge through said gas so as to create a test sample comprising a partial plasma state within said plasma torch; and applying an RF power signal from said plasma coil to said test sample in said plasma torch, wherein said adjustable operating frequency of said power amplifier tracks said variable resonance condition of said plasma coil such that said test sample in the plasma torch achieves a full plasma state. | 08-11-2011 |
| 20110234099 | PLASMA GENERATION APPARATUS - Provided is an apparatus, such as an arc mitigating device, which can include a first plasma generation device and a second plasma generation device. The second plasma generation device can include a pair of opposing and spaced apart electrodes and a low voltage, high current energy source connected therebetween. A conduit can be configured to direct plasma between the first and second plasma generation devices, such that the second plasma generation device receives plasma generated by the first plasma generation. The plasma from the first plasma generation device can act to reduce the impedance of an area between the pair of opposing electrodes sufficiently to allow an arc to be established therebetween due to the low voltage, high current energy source. | 09-29-2011 |
| 20110234100 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A processing speed may be easily controlled over the wide range within the impedance variation range. A substrate processing apparatus includes: a processing chamber configured to process a substrate; a substrate support unit configured to support the substrate in the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber; a plasma generation electrode configured to convert the processing gas supplied into the processing chamber to be in a plasma state; a radio frequency power source configured to apply a radio frequency power to the plasma generation electrode; a variable impedance electrode installed at the substrate support unit and configured to control an electric potential of the substrate; a variable impedance mechanism connected to the variable impedance electrode and configured to vary an impedance according to a reciprocal of a peak-to-peak voltage of the plasma generation electrode; an exhaust unit configured to exhaust an atmosphere in the processing chamber; and a controller configured to control at least the variable impedance mechanism. | 09-29-2011 |
| 20110234101 | Induction switch - The invention relates to an induction switch comprising a discharge container filled with gas and a coaxially interleaved electrode device, and to a corresponding method for commutating high voltages. The inductive production of a dense plasma and the subsequent flooding of an electrode gap with the plasma ions produced enables the commutation of high currents in the kiloamp range when there are blocking voltages of over 500 kV. Such an induction switch only requires a single discharge gap, can be used over a very wide voltage range, and avoids the problem of electrode erosion as a result of the electrode-free energy coupling. | 09-29-2011 |
| 20110234102 | APPARATUS FOR NORMAL PRESSURE PLASMA IGNITION AND METHOD FOR NORMAL PRESSURE PLASMA IGNITION USING SAME - Provided are an apparatus for normal pressure plasma ignition and a method for normal pressure plasma ignition using the same. The apparatus for normal pressure plasma ignition of the present invention comprises a wave guide tube wherein microwaves are applied, a dielectric tube that penetrates said wave guide tube and introduces a reactant gas, and an ignition apparatus for normal pressure plasma wherein microwaves are applied in said dielectric tube to turn said reactant gas into plasma, wherein said ignition apparatus penetrates said dielectric tube and includes an ignition rod that emits thermal electrons as said microwaves are applied in said dielectric tube. The apparatus for normal pressure plasma ignition according to the present invention enables ignition to be accomplished without power, so that the problems with the prior art that requires high voltage (excessive power, stability issues) may be avoided at the same time. In addition, the normal pressure plasma ignition apparatus according to the present invention enables movement of the ignition rod inside and outside its dielectric tube so that physical damage to the ignition apparatus due to plasma heat may be prevented, and also affords the effect that the scope of metallic materials used in the ignition apparatus is significantly wider than that of the prior art. | 09-29-2011 |
| 20110241547 | PLASMA PROCESSING APPARATUS - A plasma processing device includes a first electrode plate ( | 10-06-2011 |
| 20110248633 | METHODS AND APPARATUS FOR APPLYING PERIODIC VOLTAGE USING DIRECT CURRENT - Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects. | 10-13-2011 |
| 20110254448 | METHOD AND SYSTEM FOR INCREASING THE LIFESPAN OF A PLASMA - A method and a system for increasing the lifespan of a plasma obtained in the atmosphere. The method includes the following steps: emitting a femtosecond laser pulse, referred to as a first pulse, generating a column of plasma by the filamentation phenomenon, and emitting a second YAG laser pulse, focused by way of an axicon on a line in the plasma column, the energy of the photons of the second laser pulse being greater than the attachment energy of the electrons in the plasma to neutral molecules such as oxygen molecules. The duration of the second pulse is greater than the duration of the first pulse, and the delay between the two pulses is greater than one microsecond. | 10-20-2011 |
| 20110273094 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a vacuum chamber, a plasma processing execution portion, a discharge state detecting unit, a window portion, a camera, a first storing portion, a second storing portion and an image data extracting unit. When an abnormal discharge is detected, the image data extracting unit extracts at least moving image data showing a generation state of the abnormal discharge from the first storing portion and stores the extracted moving image data in the second storing portion. When plasma processing is ended without the detection of the abnormal discharge, the image data extracting unit extracts, from the first storing portion, moving image data of a predetermined specific period or still image data of a specific period derived from the moving image data of the first storing portion and stores the extracted moving image data or the extracted still image data in the second storing portion. | 11-10-2011 |
| 20110291566 | Multi-Wavelength Pumping to Sustain Hot Plasma - A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature. | 12-01-2011 |
| 20110309748 | RF MATCHING NETWORK OF A VACUUM PROCESSING CHAMBER AND CORRESPONDING CONFIGURATION METHODS - A RF matching network is described, and which includes a 1 | 12-22-2011 |
| 20110309749 | METHOD AND APPARATUS FOR OPERATING TRAVELING SPARK IGNITER AT HIGH PRESSURE - An ignition circuit and a method of operating an igniter (preferably a traveling spark igniter) in an internal combustion engine, including a high pressure engine. A high voltage is applied to electrodes of the igniter, sufficient to cause breakdown to occur between the electrodes, resulting in a high current electrical discharge in the igniter, over a surface of an isolator between the electrodes, and formation of a plasma kernel in a fuel-air mixture adjacent said surface. Following breakdown, a sequence of one or more lower voltage and lower current pulses is applied to said electrodes, with a low “simmer” current being sustained through the plasma between pulses, preventing total plasma recombination and allowing the plasma kernel to move toward a free end of the electrodes with each pulse. | 12-22-2011 |
| 20120001549 | PLASMA SOURCE ELECTRODE - An electrode tile configuration is disclosed. The tile has contoured edges dimensioned to control any coupling effects. A plurality of tiles in a matrix configuration is also described. | 01-05-2012 |
| 20120013253 | Phase And Frequency Control Of A Radio Frequency Generator From An External Source - Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator. | 01-19-2012 |
| 20120019143 | Plasma Generator and Method for Controlling a Plasma Generator - A plasma generator having a housing surrounding an ionization chamber, at least one working-fluid supply line leading into the ionization chamber, the ionization chamber having at least one outlet opening, at least one electric coil arrangement which surrounds at least one area of the ionization chamber, the coil arrangement being electrically connected with a high-frequency alternating-current source (AC) which is constructed such that it applies a high-frequency electric alternating current to at least one coil of the coil arrangement, is wherein a further current source (DC) is provided which is constructed such that it applies a direct voltage or an alternating voltage of a frequency lower than that of the voltage supplied by the high-frequency alternating current source (AC) to at least one coil of the coil arrangement. | 01-26-2012 |
| 20120032596 | PLASMA SOURCE FOR LARGE SIZE SUBSTRATE - A plasma source for a substrate is provided. The plasma source may include a source electrode and an impedance box. The source electrode receives a source Radio Frequency (RF) from the external and generates plasma based on capacitive coupling within a vacuum chamber. The impedance box connects at one end to an outer circumference surface of the source electrode, and is grounded at the other end to the vacuum chamber, and controls an electric current flowing from the source electrode to the vacuum chamber by the source RF. | 02-09-2012 |
| 20120038277 | POWER SUPPLY CONTROL DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD - According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information. | 02-16-2012 |
| 20120043890 | PROACTIVE ARC MANAGEMENT OF A PLASMA LOAD - Proactive arc management systems and methods are disclosed. In many implementations, proactive arc management is accomplished by executing an arc handling routine in response to an actual arc occurring in the plasma load and in response to proactive arc handling requests in a sampling interval. The number of proactive arc handling requests in a sampling interval is a function of a proactive arc management count that in turn is a function of actual number of arcs in a preceding sampling interval. Accordingly during a present sampling interval proactive arc management executes arc handling for actual arcs in the present sampling interval and for each count in a proactive arc management count updated as a function of the number of arcs in the immediately preceding sampling interval. | 02-23-2012 |
| 20120068602 | ELECTRODE AND PLASMA GUN CONFIGURATION FOR USE WITH A CIRCUIT PROTECTION DEVICE - A circuit protection device includes a plasma gun configured to emit an ablative plasma along an axis, and a plurality of electrodes, wherein each electrode is electrically coupled to a respective conductor of a circuit and is arranged substantially along a plane that is substantially perpendicular to the axis such that each electrode is positioned substantially equidistant from the axis. | 03-22-2012 |
| 20120074844 | SIGNAL GENERATION SYSTEM - A signal generating system comprises a signal generator ( | 03-29-2012 |
| 20120081006 | DEVICE FOR GENERATING PLASMA AND FOR DIRECTING AN FLOW OF ELECTRONS TOWARDS A TARGET - Various embodiments include a device for generating plasma and for directing an flow of electrons towards a specific target; the device comprises a hollow cathode; a main electrode at least partially placed inside the cathode; a resistor, electrically earthing the main electrode; a substantially dielectric tubular element extending through a wall of the cathode; a ring-shaped anode placed around the tubular element and earthed; and an activation group which is electrically connected to the cathode and is able to reduce the electric potential of the cathode of at least 8 kV in about 10 ns. | 04-05-2012 |
| 20120086339 | GAS DELIVERY DEVICES AND METHODS | 04-12-2012 |
| 20120104950 | METHODS FOR CALIBRATING RF POWER APPLIED TO A PLURALITY OF RF COILS IN A PLASMA PROCESSING SYSTEM - Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level. | 05-03-2012 |
| 20120119649 | PLASMA GENERATING APPARATUS - A plasma generating apparatus includes: a power supply one of whose electrodes is connected to vacuum chamber walls of N vacuum chambers; an oscillator which outputs a pulse signal at every predetermined period; N pulse amplifying circuits which are connected in parallel to the oscillator as well as to the other electrode of the power supply, and each of which amplifies the pulse signal and supplies the amplified pulse signal to a corresponding one of N electrodes disposed in the N vacuum chambers; and at least (N−1) timing generating circuits which are connected between the oscillator and at least (N−1) pulse amplifying circuits, and which delay the pulse signal by respectively different delay times so that at any specific time, the pulse signal is supplied to only one of the pulse amplifying circuits. | 05-17-2012 |
| 20120146508 | MEASURING AND CONTROLLING PARAMETERS OF A PLASMA GENERATOR - Methods, systems, and computer program products are described for measuring and controlling parameters of a plasma generator. A current in a primary winding of a transformer or inductive element that generates a plasma is measured. A voltage across a secondary winding of the transformer or inductive element is measured. Based on the current of the primary winding and the voltage across the secondary winding, a parameter of the plasma is determined. The parameter includes a resistance value associated with the plasma, a power value associated with the plasma, or both. | 06-14-2012 |
| 20120146509 | GENERATING PLASMAS IN PULSED POWER SYSTEMS - Generating plasmas in pulsed power systems. In one aspect, a system includes a plasma chamber having one or more anodes and cathodes arranged for generating a plasma in the plasma chamber, two or more plasma power supplies each having a pulsed power output suitable for generating the plasma and coupled to respective of the one or more anodes and cathodes of the plasma chamber and a signal generator supplying the input signal coupled to the inputs of the plasma power supplies. The input signal is selected to trigger the pulsing, by the arc management circuitry, of the power output from the plasma power supplies. The plasma power supplies each include arc management circuitry and an input coupled to trigger, in response to an input signal, pulsing, by the arc management circuitry, of the power output from the plasma power supply. | 06-14-2012 |
| 20120153829 | Method and Apparatus for the Generation of Short-Wavelength Radiation by Means of a Gas Discharge-Based High-Frequency, High-Current Discharge - The invention is related to a gas discharge-based radiation source which emits short-wavelength radiation, wherein an emitter is ionized and compressed by pulse-shaped currents between two electrodes arranged in a vacuum chamber and is excited to form an emitting plasma. According to the invention, the plasma is preserved by means of a high-frequency sequence of pulse-shaped currents the pulse repetition period of which is adjusted so as to be shorter than a lifetime of the plasma so that the plasma is kept periodically alternating between a high-energy state of an emitting compressed plasma and a low-energy state of a relaxing plasma. For exciting the relaxing plasma to the compressed plasma, excitation energy is coupled into the relaxing plasma by making use of pulse-shaped currents with repetition frequencies between 50 kHz and 4 MHz and pulse widths equal to the pulse repetition period. | 06-21-2012 |
| 20120187840 | TUNING A DIELECTRIC BARRIER DISCHARGE CLEANING SYSTEM - Apparatus and methods for generating and optimizing a plasma discharge are provided. The device includes a plasma generating device, one or more sensors, and at least one controller for adjusting the plasma in light of the sensed characteristics. Methods for optimizing a plasma, particularly a spatially disoriented plasma discharge include generating a plasma, sensing one or more plasma characteristics, modifying one or more plasma generating properties to optimize the plasma. | 07-26-2012 |
| 20120187841 | DEVICE FOR GENERATING A NON-THERMAL ATMOSPHERIC PRESSURE PLASMA - A device for generating a cold, HF-excited plasma under atmospheric pressure conditions can be used advantageously for plasma treatment of materials for cosmetic and medical purposes. The device contains a metal housing functioning as a grounded electrode in the region of the emergent plasma, wherein an HF generator, an HF resonance coil having a closed ferrite core suitable for the high frequency, an insulating body acting as a gas nozzle, and a high-voltage electrode mounted in the insulating body are disposed in such a manner that they are permeated or circulated around by process gas. By integrating the plasma nozzle and required control electronics in a miniaturized handheld device, or by using a short high-voltage cable, the invention allows compliance with the electromagnetic compatibility directives and allows the power loss to be minimized and thus a mobile application to be implemented. | 07-26-2012 |
| 20120194074 | PLASMA CHOKING METHOD AND PLASMA CHOKE COIL - A plasma choking method and a plasma choke coil. The plasma choking method includes steps of installing at least one conductive coil set in a closed space and filling a reaction fluid into the closed space. When a circuit is interfered with by external surge or the surge in the circuit, the surge applies an electric field or a magnetic field to the conductive coil. At this time, the conductive coil in the closed space generates an inductive reactance corresponding to the surge and carries out plasma reaction, whereby the surface particles of the conductive coil are ionized by the magnetic field or electric field into high-energy electrons, high-energy ions and high-energy neutral atoms so as to effectively eliminate or absorb the surge. | 08-02-2012 |
| 20120212135 | CONTROL APPARATUS, PLASMA PROCESSING APPARATUS, METHOD FOR CONTROLLING CONTROL APPARATUS - According to one embodiment, a control apparatus configured to control a plasma processing apparatus including an electrode on which a substrate is disposed in a process room, a first power supply circuit, a plasma generation unit in the process room, a second power supply circuit, including a detection unit configured to detect parameters output from the first power supply circuit, and a control unit configured to control the first power and the second power supplied from the first power supply circuit and the second power supply circuit such that the parameters correspond to target values. | 08-23-2012 |
| 20120217874 | Plasma Source with Vertical Gradient - A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions. | 08-30-2012 |
| 20120217875 | COMPLEX PLASMA GENERATING DEVICE - Provided is a complex plasma generating device which makes it possible to enhance an explosion power in such a way that electromagnetic waves are guided to intensively emit to the gas ionized by means of corona discharge by designing a waveguide with electromagnetic waves flowing therein in a spiral curve shape depending on Fibonacci sequence and in such a way that vapor obtained by vaporizing sea water is sprayed. | 08-30-2012 |
| 20120229029 | PLASMA GENERATING APPARATUS AND PLASMA GENERATING METHOD - Generated amount of active species is increased, and dew formation or moisture attachment hardly occurs on a dielectric layer. A plasma generating apparatus including a pair of electrodes, wherein a dielectric layer is arranged on at least one of surfaces of the electrodes facing each other, plasma discharge occurs as a predetermined voltage is applied to the electrodes, and a coating film is arranged on a surface of the dielectric layer. | 09-13-2012 |
| 20120262064 | Radio Frequency Power Delivery System - A system and method are provided for delivering power to a dynamic load. The system includes a power supply providing DC power having a substantially constant power open loop response, a power amplifier for converting the DC power to RF power, a sensor for measuring voltage, current and phase angle between voltage and current vectors associated with the RF power, an electrically controllable impedance matching system to modify the impedance of the power amplifier to at least a substantially matched impedance of a dynamic load, and a controller for controlling the electrically controllable impedance matching system. The system further includes a sensor calibration measuring module for determining power delivered by the power amplifier, an electronic matching system calibration module for determining power delivered to a dynamic load, and a power dissipation module for calculating power dissipated in the electrically controllable impedance matching system. | 10-18-2012 |
| 20120293070 | PLASMA ATTENUATION FOR UNIFORMITY CONTROL - A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure. | 11-22-2012 |
| 20120306369 | REACTOR STRUCTURE AND PLASMA TREATMENT APPARATUS - A distance from a negative output terminal of a secondary winding of the transformer to a feeding terminal of the cathode plate is longer than a distance from a positive output terminal of the secondary winding to a feeding terminal of the anode. The anode side feeding path electrically connects the feeding terminal of the anode bar to the positive output terminal of the secondary winding. The cathode side feeding path electrically connects the feeding terminal of the cathode plate to the negative output terminal of the secondary winding. A path length of the cathode side feeding path is longer than a path length of the anode side feeding path. The housing is formed by an electric conductor and is electrically connected to the cathode side feeding path. | 12-06-2012 |
| 20120313524 | MINIATURIZABLE PLASMA SOURCE - The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side. At a first contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a first gate of the active element, and at a second contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a second gate of the active element. | 12-13-2012 |
| 20120319584 | METHOD OF CONTROLLING THE SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM - Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis. | 12-20-2012 |
| 20130002136 | SYSTEM LEVEL POWER DELIVERY TO A PLASMA PROCESSING LOAD - The present disclosure discusses a power delivery system, and methods of operation, configured to monitor characteristics of a generator, a match network, and a plasma load, via one or more sensors, and control these components via a local controller in order to improve power delivery accuracy and consistency to the plasma load. Control can be based on a unified monitoring of power characteristics in the power delivery system as well as variations between components and even non-electrical characteristics such as plasma density, end point, and spectral components of plasma light emission, to name a few. | 01-03-2013 |
| 20130002137 | GAS CONVERSION SYSTEM - A gas conversion system using microwave plasma is provided. The system includes: a microwave waveguide; a gas flow tube passing through a microwave waveguide and configured to transmit microwaves therethrough; a temperature controlling means for controlling a temperature of the microwave waveguide; a temperature sensor disposed near the gas flow tube and configured to measure a temperature of gas flow tube or microwave waveguide; an igniter located near the gas flow tube and configured to ignite a plasma inside the gas flow tube so that the plasma converts a gas flowing through the gas flow tube during operation; and a plasma detector located near the gas flow tube and configured to monitor the plasma. | 01-03-2013 |
| 20130009545 | SYNCHRONIZED AND SHORTENED MASTER-SLAVE RF PULSING IN A PLASMA PROCESSING CHAMBER - Plasma processing apparatuses and techniques for processing substrates, which include the use of synchronized RF pulsing of a first RF signal and a delayed-and-shortened second RF signal. The first RF signal may be the primary plasma-generating RF signal and the second RF signal may be the RF bias signal or vice versa. Alternatively or additionally, the first RF signal may be the high frequency RF signal and the second RF signal may be the lower frequency RF signal. Either the first RF signal or the second RF signal may act as the master, with the other acting as the slave signal. Alternatively, an external circuit may be employed as a master to control both the first RF signal and the second RF signal as slave signals. Track-and-hold techniques and circuits are provided to ensure accurate measurement for process control and other purposes. | 01-10-2013 |
| 20130026918 | Self-Igniting Long Arc Plasma Torch - A plasma torch is formed from a hollow electrode forming a first gap to an isolated plasma tube, the isolated plasma tube forming a second gap with a plasma outlet tube having electrically common plasma tubes which terminate into a plasma outlet. The first gap and second gap of the isolated plasma tubes are fed by a source of plasma gas such that when a voltage is applied across the electrodes, plasmas initially form across the first plasma gap and second plasma gap. The formed plasmas spread laterally until the plasmas are formed entirely from electrode to electrode and self-sustaining. Plasma gasses which are fed to the plasma torch can be metered on both sides of the electrodes to steer the plasma arc attachment axially over the extent of the hollow electrodes, thereby reducing surface wear and increasing electrode life. | 01-31-2013 |
| 20130057151 | SYSTEMS AND METHODS TO GENERATE A SELF-CONFINED HIGH DENSITY AIR PLASMA - This disclosure relates to methods and devices for generating electron dense air plasmas at atmospheric pressures. In particular, this disclosure relate to self-contained toroidal air plasmas. Methods and apparatuses have been developed for generating atmospheric toroidal air plasmas. The air plasmas are self-confining, can be projected, and do not require additional support equipment once formed. | 03-07-2013 |
| 20130063028 | SURFACE FEED-IN ELECTRODES FOR DEPOSITION OF THIN FILM SOLAR CELL AND SIGNAL FEED-IN METHOD THEREOF - The present invention discloses a surface feed-in electrode structure for thin film solar cell deposition, relating to solar cell technologies. The surface feed-in electrode structure uses a signal feed-in component with a flat waist and a semicircular feed-in end to connect the signal feed-in port by surface contact. The signal feed-in port is located in a hallowed circular area of a center of the backside of a cathode plate, and feeds in an RF/VHF power supply signal. An anode plate is grounded. The cathode plate is insulated with a shielding cover, and a through-hole is configured on the shielding cover. The effects include that, by using the surface feed-in at the center of the electrode plate, the feeding line loss of single-point or multi-point feed-in configurations can be overcome. Uniform large area and stable discharge driven by the RF/VHF power supply signal can be achieved, and the standing wave and the skin effect can be effectively removed. The production efficiency can be improved and the cost can be reduced. | 03-14-2013 |
| 20130069530 | Harmonic Cold Plasma Devices and Associated Methods - A gas cartridge is described that is configured to provide sufficient gas to support cold plasma generation for a specific medical process. The gas cartridge has a seal that is pierced upon connection of the gas cartridge to the cold plasma delivery system. Different embodiments are described that use different connection locations between the gas cartridge and the cold plasma delivery system. A shroud is also described that shields the user if the cold plasma delivery system is dropped and the gas cartridge ruptures. Use of an ID system assists in ensuring that the correct gas mixture, correct gas cartridge and correct power supply settings are used for the particular medical treatment process. | 03-21-2013 |
| 20130069531 | MICROWAVE PLASMA REACTORS - New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity. | 03-21-2013 |
| 20130106286 | INDUCTIVELY COUPLED PLASMA SOURE WITH PHASE CONTROL | 05-02-2013 |
| 20130119863 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a high frequency power supply configured to generate a high frequency power; a plasma generation electrode configured to generate the plasma by the high frequency power supplied from the high frequency power supply; a single matching unit provided between the high frequency power supply and the plasma generation electrode, and configured to match an impedance of a transmission path and an impedance of a load; | 05-16-2013 |
| 20130119864 | METHOD FOR OBTAINING HIGH-ENERGY REPETITIVELY PULSED PLASMA FLOWS IN GASES AT ATMOSPHERIC AND HIGH PRESSURE - Method for obtaining high-energy repetitively pulsed plasma flows in gases at atmospheric and high pressure. | 05-16-2013 |
| 20130134876 | MOVABLE GROUNDING ARRANGEMENTS IN A PLASMA PROCESSING CHAMBER AND METHODS THEREFOR - A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component. | 05-30-2013 |
| 20130134877 | RF POWER DISTRIBUTION DEVICE AND RF POWER DISTRIBUTION METHOD - Provided are an RF power distribution device and an RF power distribution method. The RF power distribution device includes an impedance matching network for transferring power from an RF power source and a power distribution unit for distributing the output power from the impedance matching network to at least one electrode generating capacitively-coupled plasma. The power distribution unit includes a first reactive element connected in series to a first electrode, a variable capacitor having one end connected in parallel to the first reactive element and the first electrode and the other end grounded, and a second reactive element having one end connected to a first node where the one end of the variable capacitor and one end of the first reactance device are in contact with each other and the other end connected to a second node where a second electrode and an output terminal of the impedance matching network are connected. | 05-30-2013 |
| 20130134878 | LARGE AREA, ATMOSPHERIC PRESSURE PLASMA FOR DOWNSTREAM PROCESSING - An arcless, atmospheric-pressure plasma generating apparatus capable of producing a large-area, temperature-controlled, stable discharge at power densities between about 0.1 W/cm | 05-30-2013 |
| 20130162142 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound. | 06-27-2013 |
| 20130187544 | METHOD AND APPARATUS FOR GENERATING PLASMA PULSES - A method for generating plasma pulses in which at least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function and the at least two sources cooperate in such a manner that at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points. An alternative method provides at least one source and at least one reflection element for realizing the predetermined field strength. The apparatus for generating plasma pulses comprises at least two sources and at least one data processing device or at least one source, at least one reflection element and at least one data processing device and is configured in such a manner that a method for generating plasma pulses can be executed. | 07-25-2013 |
| 20130187545 | Ignition Circuit for Igniting a Plasma fed with Alternating Power - In an ignition circuit for igniting a plasma fed with alternating power in a gas discharge chamber, having two line sections for connection to an alternating power source and at least one line section for connection to a housing earth of the gas discharge chamber, at least one series connection of a non-linear element and an energy store is connected between the line sections for connection to an alternating power source, and the line section for connection to a housing earth of the gas discharge chamber is connected to a connection node between an energy store and a non-linear element. | 07-25-2013 |
| 20130214682 | FREQUENCY ENHANCED IMPEDANCE DEPENDENT POWER CONTROL FOR MULTI-FREQUENCY RF PULSING - Methods for processing a substrate in a plasma processing, chamber employing a plurality of RF power supplies. The method includes pulsing at a first pulsing frequency a first RF power supply to deliver a first RF signal between a high power state and a low power state. The method further includes switching the RF frequency of a second RF signal output by a second RF power supply between a first predefined RF frequency and a second RF frequency responsive to values of a measurable chamber parameter. The first RF frequency and the second RF frequencies and the thresholds for switching were learned in advance during a learning phase while the first RF signal pulses between the high power state and low power state at a second RF frequency lower than the first RF frequency and while the second RF power supply operates in different modes. | 08-22-2013 |
| 20130214683 | Impedance-Based Adjustment of Power and Frequency - Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line. | 08-22-2013 |
| 20130234597 | PLASMA SHIELD DEVICE AND PLASMA SOURCE APPARATUS - The plasma shield device ( | 09-12-2013 |
| 20130249398 | DEVICE AND METHOD FOR GENERATING A PLASMA | 09-26-2013 |
| 20130249399 | Plasma Processing Apparatus - The present invention provides a plasma processing apparatus. The apparatus includes a vacuum chamber, a plasma reactor arranged in the vacuum chamber for plasma processing, an RF power source for providing RF signals to the plasma reactor and an RF power transmission unit for transmitting RF signals from the RF power source to the plasma reactor inside the vacuum chamber. The RF power transmission unit includes a transmission line for transmitting RF signals and an outer conductor for shielding the electromagnetic field around the transmission line. The invention can effectively avoid the problem of electric discharge when RF signals transmit in a vacuum chamber, resulting in more security and less transmission power loss. | 09-26-2013 |
| 20130278140 | ELECTRODELESS PLASMA LAMP UTILIZING ACOUSTIC MODULATION - An electrodeless plasma lamp is described that employs acoustic resonance. The plasma lamp includes a metal enclosure having a conductive boundary forming a resonant structure, and a radio frequency (RF) feed to couple RF power from an RF power source into the resonant cavity. A bulb is received at least partially within an opening in the metal enclosure. The bulb contains a fill that forms a light emitting plasma when the power is coupled to the fill. The RF power source includes a controller to modulate the RF power to induce acoustic resonance in the plasma. | 10-24-2013 |
| 20130313971 | Gallium ION Source and Materials Therefore - In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species. | 11-28-2013 |
| 20130320852 | PHASE DIFFERENCE DETECTOR, PHASE DIFFERENCE DETECTION PROGRAM, AND PLASMA PROCESSING SYSTEM USING THE PHASE DIFFERENCE DETECTOR - A phase difference detector detects the phase difference between two AC signals at a high speed and with high accuracy. A phase difference computation unit computes the phase difference φ | 12-05-2013 |
| 20130334964 | MICROWAVE POWER DELIVERY SYSTEM FOR PLASMA REACTORS - (EN): A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors ( | 12-19-2013 |
| 20130342105 | Laser Sustained Plasma Light Source With Electrically Induced Gas Flow - A laser sustained plasma light source includes a plasma bulb containing a working gas flow driven by an electric current sustained within the plasma bulb. Charged particles are introduced into the working gas of the plasma bulb. An arrangement of electrodes maintained at different voltage levels drive the charged particles through the working gas. The movement of the charged particles within the working gas causes the working gas to flow in the direction of movement of the charged particles by entrainment. The resulting working gas flow increases convection around the plasma and increases laser to plasma interaction. The working gas flow within the plasma bulb can be stabilized and controlled by control of the voltages present on the each of the electrodes. A more stable flow of working gas through the plasma contributes to a more stable plasma shape and position within the plasma bulb. | 12-26-2013 |
| 20140028190 | ADJUSTABLE SLOT ANTENNA FOR CONTROL OF UNIFORMITY IN A SURFACE WAVE PLASMA SOURCE - The present invention provides a surface wave plasma source including an electromagnetic (EM) wave launcher comprising a slot antenna having a plurality of antenna slots configured to couple the EM energy from a first region above the slot antenna to a second region below the slot antenna, and a power coupling system is coupled to the EM wave launcher. A dielectric window is positioned in the second region and has a lower surface including the plasma surface. A slotted gate plate is arranged parallel with the slot antenna and is configured to be movable relative to the slot antenna between variable opacity positions including a first opaque position to prevent the EM energy from passing through the first arrangements of antenna slots, and a first transparent position to allow a full intensity of the EM energy to pass through the first arrangement of antenna slots. | 01-30-2014 |
| 20140049162 | DEFECT REDUCTION IN PLASMA PROCESSING - Methods and apparatus to reduce particle-induced defects on a substrate are provided. In certain embodiments, the methods involve decreasing plasma spread prior to extinguishing the plasma. The plasma is maintained at the decreased plasma spread while particles are evacuated from the processing chamber. In certain embodiments, the methods involve decreasing plasma power prior to extinguishing the plasma. The low-power plasma is maintained while particles are evacuated from the processing chamber. | 02-20-2014 |
| 20140055034 | Phase And Frequency Control Of A Radio Frequency Generator From An External Source - Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator. | 02-27-2014 |
| 20140062303 | SYSTEMS AND METHODS FOR CALIBRATING A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM - Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate. | 03-06-2014 |
| 20140062304 | Method for Stabilizing Plasma Ignition - A method for stabilizing plasma ignition in a continuous process conducted on a substrate, includes: applying a spike of RF power between an upper electrode and a lower electrode on which the substrate is placed, wherein the spike starts from zero power, jumps to a spike power, and then drops to a base power which is so low as to cause plasma ignition failure; and continuously applying RF power at the base power between the upper and lower electrode for a duration substantially longer than a duration of the spike to process the substrate. The spike is such that ignition failure is reduced. | 03-06-2014 |
| 20140062305 | Secondary Plasma Detection Systems and Methods - A system includes a control module, a detection module, and a reaction module. The control module is configured to receive a sensor signal indicating a power characteristic of an output power provided from a power generator to a load. The load is separate from the control module and the power generator. The detection module is configured to (i) detect a shift parameter of the power characteristic based on the sensor signal, (ii) compare the shift parameter to a first threshold, and (iii) indicate whether the shift parameter has exceeded the first threshold and not a second threshold. The reaction module is configured to indicate that a low-level abnormality exists in the load in response to the shift parameter exceeding the first threshold and not the second threshold. | 03-06-2014 |
| 20140062306 | SYSTEM AND METHOD OF DETERMINING EFFECTIVE GLOW DISCHARGE LAMP CURRENT - The embodiments of the invention include a method for controlling plasma conditions of a glow discharge system using the integrated electron (or ion) pulse area extracted from the total lamp current. The method of using an integrated electron/ion pulse area for controlling plasma conditions allows for controlled analysis of conductive, non-conductive and layered materials without the need for estimation of plasma voltages. The method allows for control of sputter rates and plasma emissions that cannot be achieved using other methods such as capacitive divider calculations where actual thicknesses and dielectric constants are not known or predefined. | 03-06-2014 |
| 20140091712 | METHOD AND APPARATUS FOR OPERATING TRAVELING SPARK IGNITER AT HIGH PRESSURE - An ignition circuit and a method of operating an igniter (preferably a traveling spark igniter) in an internal combustion engine, including a high pressure engine. A high voltage is applied to electrodes of the igniter, sufficient to cause breakdown to occur between the electrodes, resulting in a high current electrical discharge in the igniter, over a surface of an isolator between the electrodes, and formation of a plasma kernel in a fuel-air mixture adjacent said surface. Following breakdown, a sequence of one or more lower voltage and lower current pulses is applied to said electrodes, with a low “simmer” current being sustained through the plasma between pulses, preventing total plasma recombination and allowing the plasma kernel to move toward a free end of the electrodes with each pulse. | 04-03-2014 |
| 20140097751 | HYBRID IMPEDANCE MATCHING FOR INDUCTIVELY COUPLED PLASMA SYSTEM - In one aspect, a system includes a generator configured to generate and tune a frequency of a supply signal. The system includes an auto-matching network configured to receive the supply signal and to generate an impedance-matched signal for use in powering a plasma system. In some implementations, during a first stage of an impedance matching operation, the generator is configured to tune the frequency of the supply signal until the generator identifies a frequency for which the reactance of the generator and the reactance of the load are best matched. In some implementations, during a second stage of the impedance matching operation, the auto-matching network is configured to tune a tuning element within the auto-matching network until the auto-matching network identifies a tuning of the tuning element for which the resistance of the generator and the resistance of the load are best matched. | 04-10-2014 |
| 20140103806 | PRESSURE CONTROLLED HEAT PIPE TEMPERATURE CONTROL PLATE - A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path. | 04-17-2014 |
| 20140103807 | DEVICE FOR GENERATING SHORT-WAVELENGTH ELECTROMAGNETIC RADIATION BASED ON A GAS DISCHARGE PLASMA - A device for generating short-wavelength electromagnetic radiation based on a gas discharge plasma calls for suppressing droplet formation of liquid coating material that is applied to disk electrodes rotated at high rotational frequencies and ensuring a uniform layer thickness. The device has two rotating disk electrodes, each having two lateral surfaces and a circumferential surface, provided with a reservoir with liquid coating material and a wiper for removing excess coating material. The wiper, which has a U-shaped form comprising two legs parallel to the lateral surfaces of the disk electrode and a crosspiece transversely over the circumferential surface, is at least axially movably supported and has impingement elements at the legs so that it is automatically axially adjustable by means of the coating material which is transported on the lateral surfaces and pressed into the gap during the rotation of the disk electrode. | 04-17-2014 |
| 20140103808 | METHOD FOR CONTROLLING ION ENERGY IN RADIO FREQUENCY PLASMAS - A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component. | 04-17-2014 |
| 20140159580 | Protecting Passive HF Generator Components - In one aspect, a method includes protecting passive components connected to a high-frequency generator. In another aspect, a system includes a high-frequency generator having an HF source generating a high-frequency power signal at a fundamental frequency, and having a first control circuit which is fed with a signal related to an HF power transmitted by a high-frequency cable between the high-frequency generator and a load. | 06-12-2014 |
| 20140159581 | METHOD AND DEVICE FOR GENERATING OPTICAL RADIATION BY MEANS OF ELECTRICALLY OPERATED PULSED DISCHARGES - The present invention relates to a method and device for generating optical radiation ( | 06-12-2014 |
| 20140167612 | Vacuum Ultraviolet Photon Source, Ionization Apparatus, and Related Methods - A vacuum ultraviolet (VUV) photon source includes a body, a VUV window, electrodes disposed on the body outside an interior thereof, and a dielectric barrier between the electrodes. A method for generating VUV photons includes generating a dielectric barrier discharge (DBD) in an interior of a photon source by applying a periodic voltage between a first electrode and a second electrode separated by a dielectric barrier, wherein the DBD produces excimers from a gas in a gap between the electrodes, and transmitting VUV photons through a window of the photon source. | 06-19-2014 |
| 20140167613 | Computation of Statistics for Statistical Data Decimation - Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (RF) system, propagating the variable through a model of the RF system, and counting an output of the model for the variable to generate a count. The method further includes determining whether the count meets a count threshold, generating a statistical value of the variable at the output of the model upon determining that the count meets the count threshold, and sending the statistical value to the RF system to adjust the variable. | 06-19-2014 |
| 20140184072 | Cold Plasma Annular Array Methods and Apparatus - Methods and apparatus are described that use an array of two or more cold plasma jet ports oriented to converge at a treatment area. The use of an array permits greater tissue penetration by cold plasma treatments. This approach enables treatment of deeper infections of soft and hard tissues without surgical intervention. For example, this approach can treat sub-integumental infections, such as those common to joint replacements, without surgically opening the issues overlying the deeper infection. | 07-03-2014 |
| 20140197731 | Tuning A Parameter Associated With Plasma Impedance - Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value. | 07-17-2014 |
| 20140197732 | SELF-TUNED DIELECTRIC BARRIER DISCHARGE - A plasma generating system. A pair of electrodes are spaced apart by an electrode gap. A source of a gas adapted to place the gas in the electrode gap. A power generating circuit is coupled to the electrodes to generate an electric field across the electrodes so as to initiate a plasma discharge within the electrode gap. The power generating circuit has adequate capacity to maintain a sufficient electric field across the gap during the plasma discharge to allow a plasma impedance to self-tune to the plasma generating system. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract. | 07-17-2014 |
| 20140210345 | CAPACITIVELY COUPLED REMOTE PLASMA SOURCE - This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes. | 07-31-2014 |
| 20140217891 | ELECTRODE FOR PLASMA PROCESSING APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND PLASMA PROCESSING APPARATUS - According to embodiments, an inner electrode having a plurality of gas holes includes a first contact surface provided to a part of an outer peripheral surface. An outer electrode includes a second contact surface provided to a part of an inner peripheral surface, corresponding to the first contact surface of the inner electrode. The inner electrode and the outer electrode come into contact with each other on the first and second contact surfaces. A brazing filler metal is filled in a brazing filler metal filling hole that reaches from front side main surfaces of the inner electrode and the outer electrode to the contact surfaces to join the inner electrode and the outer electrode. | 08-07-2014 |
| 20140217892 | PLASMA SOURCE - The present invention relates to a plasma source which is arranged in floating fashion on a vacuum chamber, wherein the plasma source comprises a source housing, and a filament is provided in the source housing and is arranged so as to be insulated therefrom, wherein means for measuring the potential drop between the source housing and the filament are provided. The measured potential drop can be used for regulating the voltage heating the filament. According to the invention, corresponding means are provided. | 08-07-2014 |
| 20140232266 | ADJUSTABLE NON-DISSIPATIVE VOLTAGE BOOSTING SNUBBER NETWORK FOR ACHIEVING LARGE BOOST VOLTAGES - This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. | 08-21-2014 |
| 20140239812 | SYSTEM AND APPARATUS FOR ARC ELIMINATION - An apparatus is provided. The apparatus includes a plasma generation element physically coupled to a first main electrode. The plasma generation element includes at least a first open end and a second open end. Each open end defines a nozzle such that the first open end directs an ablative plasma to a second main electrode and the second open end directs the ablative plasma to a third main electrode. | 08-28-2014 |
| 20140239813 | RELIABLE PLASMA IGNITION AND REIGNITION - This disclosure describes systems, methods, and apparatus for ensuring desirable ignition of plasma in a plasma processing chamber via providing increased instantaneous power during an ignition period for both continuous wave (CW) and pulsed power delivery. The systems, methods, and apparatus can be applied to both initial ignition of a plasma and reignition of a plasma where pulsed power delivery leads to periodic extinction of the plasma. | 08-28-2014 |
| 20140252953 | PLASMA GENERATOR - An arrangement for generating plasma, the arrangement comprising a primary plasma source ( | 09-11-2014 |
| 20140265848 | Micro-Plasma Generation Using Micro-Springs - An ionic wind engine unit for cooling semiconductor circuit assemblies includes a curved micro-spring and an associated electrode that are maintained apart at an appropriate gap distance such that, when subjected to a sufficiently high voltage potential (i.e., as determined by Peek's Law), current crowding at the spring's tip portion creates an electrical field that sufficiently ionizes neutral molecules in a portion of the air-filled region surrounding the tip portion to generate a micro-plasma event. In one engine type the electrode is a metal pad, and in a second engine type the electrode is a second micro-spring. Ionic wind cooling is generated, for example, between an IC die and a base substrate in a flip-chip arrangement, by controlling multiple engines disposed on the facing surfaces to produce an air current in the air gap region separating the IC device and base substrate. | 09-18-2014 |
| 20140265849 | HARDWARE PLASMA INTERLOCK SYSTEM - A hardware interlock system for monitoring operation of RF plasma sources. The hardware interlock system includes an RF generator operative to transmit a forward RF power used to generate plasma in a plasma chamber. A derivative based hardware interlock circuit is coupled in series with the RF generator. The derivative based hardware interlock circuit determines a reflected RF power derivative value indicative of the speed of change in reflected RF power values in the RF plasma ion source. An analog/digital (A/D) logic circuit is coupled with the derivative based hardware interlock circuit. The A/D logic circuit can shut down the RF generator output when the reflected RF power derivative value exceeds a threshold. | 09-18-2014 |
| 20140265850 | WAVEGUIDE-BASED APPARATUS FOR EXCITING AND SUSTAINING A PLASMA - An apparatus includes an electromagnetic waveguide; an iris structure providing an iris in the waveguide. The iris structure may define an iris hole, a first iris slot at a first side of the iris hole, and a second iris slot at a second side of the iris hole. A plasma torch is disposed within the iris hole. An electric field in the waveguide changes direction from the first iris slot to the second iris slot. The plasma torch generates a plasma which is substantially symmetrical around a longitudinal axis of the plasma torch, such that the plasma may have a substantially toroidal shape. In some embodiments, a dielectric material is disposed in the iris hole, outside of the plasma torch. In some embodiments, the height of at least one of the iris slots is greater at the ends thereof than in the middle. | 09-18-2014 |
| 20140265851 | Chamber Matching For Power Control Mode - Systems and methods for performing chamber matching are described. One of the methods for performing chamber matching includes executing a first test within a first plasma chamber to measure a variable and executing a second test within a second plasma chamber to measure the variable. The first and second tests are executed based on one recipe. The method further includes determining a first relationship between the variable measured with the first test and power provided during the first test, determining a second relationship between the variable measured with the second test and power provided during the second test, and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships. The power adjustment causes the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber. | 09-18-2014 |
| 20140265852 | Dual Control Modes - Systems and methods for using variables based on a state associated with a plasma system. A method includes determining whether the state associated with the plasma system is a first state or a second state and determining a first variable upon determining that the state is the first state. The first variable is determined based on a measurement at a communication medium. The method further includes determining a second variable upon determining that the state is the second state. The second variable is determined based on a measurement at the communication medium. The method includes determining whether the second variable exceeds a first threshold, providing an instruction to reduce power supplied to a plasma chamber upon determining that the second variable exceeds the first threshold, and providing an instruction to increase power supplied to the plasma chamber upon determining that the second variable is below the first threshold. | 09-18-2014 |
| 20140320012 | SELF-CLEANING RADIO FREQUENCY PLASMA SOURCE - A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described. Various examples provide an RF plasma source comprising an RF antenna and a rotatable dielectric sleeve disposed around the RF antenna. The dielectric is positioned between a process chamber and cleaning chamber such that portions of the surface of the dielectric may be exposed to either the process chamber or the cleaning chamber. As material is deposited on the outer surface of the dielectric in the process chamber, the dielectric sleeve is rotated so that the portion containing the buildup is exposed to the cleaning chamber. A sputtering process in the cleaning chamber removes the buildup from the surface of the sleeve. The dielectric sleeve is then rotated so that it exposed to the process chamber. Other embodiments are disclosed and claimed. | 10-30-2014 |
| 20140320013 | Multiple Radio Frequency Power Supply Control of Frequency and Phase - A system has a first RF generator and a second RF generator. The first RF generator controls the frequency of the second RF generator. The first RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit scales the frequency of the first RF generator to control the frequency of the second RF generator. | 10-30-2014 |
| 20140320014 | PULSE MODE CAPABILITY FOR OPERATION OF AN RF/VHF IMPEDANCE MATCHING NETWORK WITH 4 QUADRANT, VRMS/IRMS RESPONDING DETECTOR CIRCUITRY - A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals. | 10-30-2014 |
| 20140320015 | REDUCING STORED ELECTRICAL ENERGY IN A LEAD INDUCTANCE - According to a first aspect of the present invention, reducing electrical energy stored in a load or in one or more leads for connecting a power supply with the load is achieved by plasma process power circuitry including a switch in operative connection with at least one of the leads for enabling/interrupting power to the load; a first electrical nonlinear device; an energy storing device arranged in series with the first electrical nonlinear device; and a pre-charging circuit in operative connection with the energy storing device, the pre-charging circuit configured to charge the energy storing device to a pre-determined energy level while power to the load is enabled. | 10-30-2014 |
| 20140327358 | METHOD OF CONTROLLING AN ION IMPLANTER IN PLASMA IMMERSION MODE - The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising:
| 11-06-2014 |
| 20140361689 | Apparatus for generating thermodynamically cold microwave plasma - The invention relates to an apparatus for generating a thermodynamically cold plasma under standard atmospheric conditions by injecting microwave radiation at a frequency of >3 GHz into a plasma chamber ( | 12-11-2014 |
| 20140361690 | PLASMA PROCESSING APPARATUS - In a capacitively coupled plasma processing apparatus, a susceptor (lower electrode) | 12-11-2014 |
| 20140375207 | LARGE-AREA PLASMA GENERATING APPARATUS - A large-area plasma generating apparatus is disclosed, which includes a reaction chamber; a first electrode disposed in the reaction chamber; a second electrode parallel with the first electrode and disposed in the reaction chamber; and a discharge region formed between the first and second electrodes and a plasma can be formed therein; wherein a travelling wave or a traveling-wave-like electromagnetic field is generated via at least one of the first and second electrodes and travels from one end of the discharge region to its opposite end, so as to uniform the plasma in the discharge region. | 12-25-2014 |
| 20150008825 | MICROPLASMA JET DEVICES, ARRAYS, MEDICAL DEVICES AND METHODS - Preferred embodiments of the present invention include microplasma jet devices and arrays in various materials, and low temperature microplasma jet devices and arrays. These include preferred embodiment single microplasma jet devices and arrays of devices formed in monolithic polymer blocks with elongated microcavities. The arrays can be densely packed, for example having 100 jets in an area of a few square centimeters. Additional embodiments include metal/metal oxide microplasma jet devices that have micronozzles defined in the metal oxide itself. Methods of fabrication of microplasma jet devices are also provided by the invention, and the methods have been demonstrated as being capable of producing tailored micronozzle contours that are unitary with the material insulating electrodes. | 01-08-2015 |
| 20150022086 | PLASMA PROCESSING APPARATUS, ABNORMAL OSCILLATION DETERMINATION METHOD AND HIGH-FREQUENCY GENERATOR - Disclosed is a plasma processing apparatus including: a processing container; a plasma generating mechanism including a high-frequency oscillator, and configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator configured to adjust impedance to be applied to the high-frequency oscillator; and a determining unit configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed. | 01-22-2015 |
| 20150028744 | Etch Rate Modeling and Use Thereof for In-Chamber and Chamber-to-Chamber Matching - A method for performing chamber-to-chamber matching includes receiving a voltage and a current measured at an output of an RF generator of a first plasma system. The method further includes calculating a sum of terms. The first term is a first product of a coefficient and a function of the voltage. The second term is a second product of a coefficient and a function of the current. The third term is a third product of a coefficient, a function of the voltage, and a function of the current. The method further includes determining the sum to be the etch rate associated with the first plasma system and adjusting power output from an RF generator of a second plasma system to achieve the etch rate associated with the first plasma system. | 01-29-2015 |
| 20150035436 | APPARATUS AND METHODS FOR GENERATING ELECTROMAGNETIC RADIATION - An apparatus for generating electromagnetic radiation includes an envelope, a vortex generator configured to generate a vortexing flow of liquid along an inside surface of the envelope, first and second electrodes within the envelope configured to generate a plasma arc therebetween, and an insulative housing associated surrounding at least a portion of an electrical connection to one of the electrodes. The apparatus further includes a shielding system configured to block electromagnetic radiation emitted by the arc to prevent the electromagnetic radiation from striking all inner surfaces of the insulative housing. The apparatus further includes a cooling system configured to cool the shielding system. | 02-05-2015 |
| 20150048739 | Elongated Capacitively Coupled Plasma Source For High Temperature Low Pressure Environments - A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure. | 02-19-2015 |
| 20150048740 | SUB-PULSING DURING A STATE - A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal. | 02-19-2015 |
| 20150054405 | PLASMA GENERATING DEVICE - The invention relates to a plasma generation device comprising a plurality of plasma modules for generating a plasma. Each plasma module has a module housing with at least one gas inlet for supplying a process gas. Furthermore, a discharge device for generating the plasma from the process gas and a plasma outlet are provided. The plasma generation device has at least two plasma modules for generating a plasma. Each plasma module has at least one gas outlet for some of the process gas, wherein the at least one gas outlet of at least one plasma module issues into a respective gas inlet of another plasma module. | 02-26-2015 |
| 20150069910 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first DC power supply that applies a DC voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first DC power supply to the electrode of the electrostatic chuck; cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off. | 03-12-2015 |
| 20150069911 | HAND-HELD DEVICE AND METHOD OF PLASMA TREATMENT OF A WORKPIECE WITH THE HAND-HELD DEVICE - A hand-held device and a method for plasma treatment of workpieces. The hand-held device comprises a housing for receiving a plasma source supplied with a gas stream from a gas supply unit. Further, an electrode unit is arranged in the plasma source and connected via an electrical line with a voltage source so that a plasma stream can be produced. The plasma stream can be directed through a nozzle of the housing onto a workpiece. The hand-held device comprises a sensor system for the collection of operating parameters which includes at least one operator sensor device for collecting a position of an operator relative to the plasma source and at least one pressure sensor for the collection of a pressure in the gas supply unit. Means of the hand-held device is communicatively connected with the sensor system for detecting the collected operating parameter via control data lines. | 03-12-2015 |
| 20150069912 | RF Impedance Model Based Fault Detection - A method to detect a potential fault in a plasma system is described. The method includes accessing a model of one or more parts of the plasma system. The method further includes receiving data regarding a supply of RF power to a plasma chamber. The RF power is supplied using a configuration that includes one or more states. The method also includes using the data to produce model data at an output of the model. The method includes examining the model data. The examination is of one or more variables that characterize performance of a plasma process of the plasma system. The method includes identifying the fault for the one or more variables. The method further includes determining that the fault has occurred for a pre-determined period of time such that the fault is identified as an event. The method includes classifying the event. | 03-12-2015 |
| 20150084509 | HIGH-FREQUENCY POWER SUPPLY DEVICE AND REFLECTED WAVE POWER CONTROL METHOD - In an RF power supply for supplying RF power to a plasma load, reflected wave power control is performed in which the reflected wave power of an RF generator is detected and the RF generator is controlled. For a short-time variation in reflected wave power, control is performed based on a peak value variation in the detection value of reflected wave power. For a long-time variation in reflected wave power, control is performed based on a variation in a smoothed value obtained by smoothing detection values of reflected wave power. A reflected wave power control loop system includes a reflected wave power peak value dropping loop system and an arc blocking system that perform control based on a peak variation in reflected wave power and a reflected wave power amount dropping loop system that performs control based on a smoothed power amount of reflected wave power. | 03-26-2015 |
| 20150091440 | Control of Impedance of RF Return Path - A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path. | 04-02-2015 |
| 20150091441 | Control of Impedance of RF Delivery Path - A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe. | 04-02-2015 |
| 20150097485 | METHOD AND APPARATUS FOR PLASMA IGNITION IN HIGH VACUUM CHAMBERS - A plasma process method and apparatus for use with a vacuum instrument having a vacuum chamber evacuated by an oil free high vacuum pump to a base pressure below about 1 Pa. A gas buffer chamber in fluid communication with the plasma chamber, the gas buffer chamber having a volume about 1/500 to 1/2000 of the volume of the vacuum chamber. A valve between the plasma chamber and the gas chamber permits flow between the gas chamber and the plasma chamber, wherein, upon opening the valve, gas is admitted into the plasma chamber and pressure in the plasma chamber rises temporarily to between about 10 and about 200 Pa and plasma ignition can be obtained when the plasma excitation device is energized simultaneously. A flow restriction between the gas source and the gas chamber has a maximum flow rate therethrough of about 25 sccm. (standard cubic centimeters per minute) or less so that pressure in the plasma chamber remains between about 1 and about 7 Pa after plasma ignition to maintain plasma conduction and to avoid overloading or heating of the high vacuum pump. | 04-09-2015 |
| 20150097486 | MULTIZONE HOLLOW CATHODE DISCHARGE SYSTEM WITH COAXIAL AND AZIMUTHAL SYMMETRY AND WITH CONSISTENT CENTRAL TRIGGER - A showerhead assembly includes a front plate having a front surface, a back surface and a plurality of first through holes connecting the front surface and the back surface, a back plate having a front surface, a back surface and a plurality of second through holes connecting the front surface and the back surface, and an adhesive layer joining the back surface of the front plate and the front surface of the back plate. The plurality of first through holes are aligned with the plurality of second through holes, and the front plate and the back plate are formed from dissimilar materials. | 04-09-2015 |
| 20150108897 | MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE SUPPLY METHOD - Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space a microwave generator configured to generate microwaves for generating plasma of a processing gas introduced into the processing space, a distributor configured to distribute the microwaves to a plurality of waveguides using a variable distribution ratio, an antenna installed in the processing container to seal the processing space and configured to radiate the microwaves distributed to each of the plurality of waveguides by the distributor to the processing space, a monitor unit configured to monitor a power of the microwaves distributed to each of the plurality of waveguides by the distributor, and a distribution ratio control unit configured to correct the distribution ratio used for distribution of the microwaves by the distributor based on a difference between a ratio of the power of the microwaves monitored by the monitor unit and a previously designated distribution ratio. | 04-23-2015 |
| 20150115796 | PINCHED PLASMA BRIDGE FLOOD GUN FOR SUBSTRATE CHARGE NEUTRALIZATION - A plasma flood gun for an ion implantation system includes an insulating block portion and first and second conductive block portions disposed on opposite sides of the insulating block portion. Conductive straps can be coupled between the first and second conductive block portions. The conductive block portions and the central body portion include recesses which form a closed loop plasma chamber. A power source is coupled to the conductive block portions for inductively coupling radio frequency electrical power into the closed loop plasma chamber to excite the gaseous substance to generate a plasma. The respective recess in the second conductive block portion includes a pinch region having a cross-sectional dimension that is smaller than a cross-sectional area of portion of the closed loop plasma chamber directly adjacent the pinch region. The pinch region can be positioned immediately adjacent an outlet portion formed in the second conductive block portion. | 04-30-2015 |
| 20150115797 | HIGH-FREQUENCY POWER SUPPLY DEVICE AND IGNITION VOLTAGE SELECTION METHOD - When RF power is supplied from an RF generator to a load via a power supply unit,
| 04-30-2015 |
| 20150115798 | Plasma Generator Using Spiral Conductors - A plasma generator includes a pair of identical spiraled electrical conductors separated by dielectric material. Both spiraled conductors have inductance and capacitance wherein, in the presence of a time-varying electromagnetic field, the spiraled conductors resonate to generate a harmonic electromagnetic field response. The spiraled conductors lie in parallel planes and partially overlap one another in a direction perpendicular to the parallel planes. The geometric centers of the spiraled conductors define endpoints of a line that is non-perpendicular with respect to the parallel planes. A voltage source coupled across the spiraled conductors applies a voltage sufficient to generate a plasma in at least a portion of the dielectric material. | 04-30-2015 |
| 20150123540 | DEVICE FOR PROVIDING A FLOW OF PLASMA - A device for providing a flow of non-thermal gaseous plasma for treatment of a treatment region comprises a cell for the generation of the non-thermal plasma, the cell having an inlet for gas and an outlet for the non-thermal gaseous plasma. The cell is in heat conducting relationship with a heat sink through a heat pipe, the heat sink and the heat pipe both forming parts of the device. The cell typically has a dielectric member of high thermal conductivity in heat conducting relationship with the heat pipe. The heat sink is typically a capsule containing the gas to be supplied to the inlet of the cell. | 05-07-2015 |
| 20150123541 | PARTICLE GENERATION SUPPRESSPR BY DC BIAS MODULATION - Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, the methods generally includes generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma. Minimizing the electrical potential difference between the plasma and the electrodes reduces particle generation because the acceleration of the ions in the sheath region of the electrodes is reduced and the collision force of the ions with the protective coating layer on the electrodes is minimized. Therefore, particle generation on the substrate surface is reduced. | 05-07-2015 |
| 20150123542 | Wafer Grounding Using Localized Plasma Source - An apparatus may include a substrate support portion, a plasma generation chamber, electrodes, and a power source. The substrate support portion supports a substrate including an insulating layer and a substrate bulk. The plasma generation chamber may include chamber wall portions, a gas port, and a plasma application aperture and is configured to contain a gas. The plasma application aperture may be covered by a portion of the substrate. Each electrode may protrude into or extend into an interior portion of the plasma generation chamber. The power source may be coupled to a particular electrode, and the power source may be configured to apply a voltage to the particular electrode. Application of the voltage to the particular electrode generates a plasma within the plasma generation chamber, whereby generation of the plasma results in a conductive path through the insulating layer of the substrate between the plasma and the substrate bulk. | 05-07-2015 |
| 20150130354 | FREQUENCY TUNING FOR DUAL LEVEL RADIO FREQUENCY (RF) PULSING - Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power. | 05-14-2015 |
| 20150137681 | PLASMA GENERATION SOURCE EMPLOYING DIELECTRIC CONDUIT ASSEMBLIES HAVING REMOVABLE INTERFACES AND RELATED ASSEMBLIES AND METHODS - Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods are disclosed. The plasma generation source (PGS) includes an enclosure body having multiple internal surfaces forming an internal chamber having input and output ports to respectively receive a precursor gas for generation of plasma and to discharge the plasma. A dielectric conduit assembly may guide the gas and the plasma away from the internal surface where particulates may be generated. The dielectric conduit assembly includes a first and second cross-conduit segments. The dielectric conduit assembly further includes parallel conduit segments extending from the second cross-conduit segment to distal ends which removably align with first cross-conduit interfaces of the first cross-conduit segment without leaving gaps. In this manner, the dielectric conduit assembly is easily serviced, and reduces and contains particulate generation away from the output port. | 05-21-2015 |
| 20150313000 | HYBRID IMPEDANCE MATCHING FOR INDUCTIVELY COUPLED PLASMA SYSTEM - In one aspect, a system includes a generator configured to generate and tune a frequency of a supply signal. The system includes an auto-matching network configured to receive the supply signal and to generate an impedance-matched signal for use in powering a plasma system. In some implementations, during a first stage of an impedance matching operation, the generator is configured to tune the frequency of the supply signal until the generator identifies a frequency for which the reactance of the generator and the reactance of the load are best matched. In some implementations, during a second stage of the impedance matching operation, the auto-matching network is configured to tune a tuning element within the auto-matching network until the auto-matching network identifies a tuning of the tuning element for which the resistance of the generator and the resistance of the load are best matched. | 10-29-2015 |
| 20150319838 | MULTI-STAGE HETERODYNE CONTROL CIRCUIT - A circuit for controlling an RF generator, the circuit including first and second heterodyne stages. The first heterodyne stage receives an input signal, which is based on a characteristic of an RF signal generated by the RF generator, and is configured to: mix the input signal with a first mix signal to generate a first heterodyne signal and to filter the first heterodyne signal through a low pass filter. The second heterodyne stage receives the filtered first heterodyne signal and is configured to: mix the filtered first heterodyne signal with a second mix signal to generate a second heterodyne signal and to filter the second heterodyne signal through a band pass filter. A detection stage converts the filtered second heterodyne signal to a DC signal, and a power control stage receives the DC signal and controls the RF signal in response to the DC signal. | 11-05-2015 |
| 20150325413 | PLASMA APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A plasma apparatus includes a process chamber having an inner space, a chuck disposed in the process chamber and having a top surface on which a substrate is loaded, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit generating plasma over the chuck, and a direct current (DC) power generator applying a DC pulse signal to the chuck. A period of the DC pulse signal may include a negative pulse duration during which a negative pulse is applied, a positive pulse duration during which a positive pulse is applied, and a pulse-off duration during which the negative pulse and the positive pulse are turned off. The positive pulse duration is between the negative pulse duration and the pulse-off duration. The pulse-off duration may comprise a voltage having a lower magnitude than the voltage of the positive pulse, such as a ground voltage. | 11-12-2015 |
| 20150349750 | Impedance-Matching Network Using BJT Switches in Variable-Reactance Circuits - This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology. | 12-03-2015 |
| 20150366042 | Dielectric Barrier Discharge Plasma Generator - A dielectric barrier discharge plasma generation devices that controllably produces uniform, non-equilibrium plasma and discharges a plasma plume at atmospheric pressure. The device has a gas source, a power source, and a plasma generator probe from which the plume of plasma is discharged. The probe has an elongate, dielectric ionization conduit arranged in coaxial relationship within the housing. An elongate inner electrode extends within the ionization conduit and connects to the power source. An outer electrode is slidably arranged on the outer surface of the ionization conduit, and is also electrically connected to the power source. The electrodes are constructed and arranged so that movement of the outer electrode relative to the inner electrode changes at least one property of the plasma plume. The inner electrode may include means for generating a plurality of separate, high-intensity electric fields along the length and around the perimeter of the inner electrode distal portion. In a preferred embodiment, the inner electrode has an elongate base extending generally parallel to the central axis of the ionization tube, and a plurality of bristles electrically-connected to and transversely-extending from at least a portion of the electrode base. | 12-17-2015 |
| 20150366043 | PLASMA GENERATING SYSTEM HAVING MOVABLE ELECTRODES - A plasma generating system is provided. The plasma generating system includes: a pair of electrodes having distal ends; an electrode holder holding the pair of electrodes; a gate having a surface on which the electrode holder is slidably mounted and adapted to be controlled by sliding the electrode holder on the surface; and a resilient member secured to the gate and adapted to generate a force to close the opening. The distal ends are adapted to move into an opening of the gate as the electrode holder slides along a direction on the surface and adapted to generate an electric arc to thereby ignite plasma in a gas. | 12-17-2015 |
| 20150373824 | APPARATUS FOR PRODUCING A PLASMA AND HAND-HELD DEVICE HAVING THE APPARATUS - An apparatus for producing a plasma including a control circuit which is electrically connected to a piezoelectric transformer in order to excite the piezoelectric transformer. A hand-held device that uses the apparatus. The piezoelectric transformer is constructed of several layers. The control circuit is implemented on a circuit board, and the piezoelectric transformer is held over the circuit board by means of a region of a first end. A high voltage is applied to a second free end of the piezoelectric transformer. The plasma is produced at atmospheric pressure. | 12-24-2015 |
| 20150382442 | FREQUENCY TUNING FOR PULSED RADIO FREQUENCY PLASMA PROCESSING - This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each pulse during a processing phase, where a real substrate is used and processed in the chamber. | 12-31-2015 |
| 20160005573 | IMPEDANCE-BASED ADJUSTMENT OF POWER AND FREQUENCY - Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line. | 01-07-2016 |
| 20160042920 | GROOVED INSULATOR TO REDUCE LEAKAGE CURRENT - A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity. | 02-11-2016 |
| 20160049280 | COMPACT CONFIGURABLE MODULAR RADIO FREQUENCY MATCHING NETWORK ASSEMBLY FOR PLASMA PROCESSING SYSTEMS - A compact configurable radio frequency (RF) matching network for matching RF energy output from an RF generator to a variable impedance load is disclosed. The matching network includes an input connector; an output connector; and a component assembly array including one or more tune and load electrical components. At least one of the electrical components is coupled to the input connector, at least one of the electrical components is coupled to the output connector, the component assembly array is adapted to be arranged in a selected topology, and the selected topology is adapted to reduce RF energy reflected from the variable impedance load. Numerous other aspects are provided. | 02-18-2016 |
| 20160064161 | HIGH VOLTAGE SWITCHING CIRCUIT - A switching circuit includes: an electronic switch comprising one or more diodes for switching a capacitor within an electronic variable capacitor array; a first power switch receiving a common input signal and a first voltage input; and a second power switch receiving the common input signal and a second voltage input, wherein the second voltage input is opposite in polarity to the first voltage input, and the first power switch and the second power switch asynchronously connect the first voltage input and the second voltage input, respectively, to a common output in response to the common input signal, the one or more diodes being switched according to the first voltage input or the second voltage input connected to the common output. | 03-03-2016 |
| 20160064191 | ION CONTROL FOR A PLASMA SOURCE - One embodiment is directed to an apparatus including a plasma source and operation electronics coupled to the plasma source. The plasma source includes at least two electrodes configured to generate plasma. The operation electronics are configured to generate plasma with the at least two electrodes and apply an ion flux modification bias to the at least two electrodes. | 03-03-2016 |
| 20160071697 | ADJUSTABLE NON-DISSIPATIVE VOLTAGE BOOSTING SNUBBER NETWORK FOR ACHIEVING LARGE BOOST VOLTAGES - This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. | 03-10-2016 |
| 20160079038 | PLASMA PROCESSING APPARATUS AND FILTER UNIT - A filter unit | 03-17-2016 |
| 20160081175 | VOLTAGE RESONANT INVERTER, CONTROL METHOD, AND SURFACE TREATMENT DEVICE - Excitation current is applied to an excitation winding of a step-up transformer by switching an input voltage with a first switching element. Excitation energy stored causes a voltage resonant state in the secondary side of the step-up transformer during a period when the excitation current is shut off. When the excitation current is shut off, a second resonant circuit provided in the primary side of the step-up transformer enters a resonant state. When a second switching element of the second resonant circuit is turned on, energy returning to an input side in a region where the output voltage is negative is commutated through a second diode to be absorbed in the input voltage. The second switching element is kept off while the second resonant circuit is in the resonant state, turned on when the resonant state ends, and turned off after the first switching element is turned on. | 03-17-2016 |
| 20160086759 | Plasma Generator With at Least One Non-Metallic Component - A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other. | 03-24-2016 |
| 20160086772 | AUTO FREQUENCY TUNED REMOTE PLASMA SOURCE - A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element. | 03-24-2016 |
| 20160093475 | METHOD AND APPARATUS FOR GENERATING PLASMA PULSES - A method and apparatus generates pulses that can be used for high-precision three-dimensional plasma treatment. At least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function. In a method, the at least two sources cooperate in such a manner that at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points. An alternative method uses at least one source and at least one reflection element. An apparatus with at least two sources and at least one data processing device or at least one source, at least one reflection element and at least one data processing device is configured such that one of the methods can be executed. | 03-31-2016 |
| 20160095196 | DETECTING PLASMA ARCS BY MONITORING RF REFLECTED POWER IN A PLASMA PROCESSING CHAMBER - Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power. | 03-31-2016 |
| 20160099130 | ANTENNA FOR PLASMA GENERATION AND PLASMA PROCESSING DEVICE HAVING THE SAME - Provided are an antenna, which is disposed in a vacuum chamber for generating an inductively coupled plasma, and a plasma processing device. The antenna and the plasma processing device suppress increase of the impedance even if the antenna is lengthened. An antenna | 04-07-2016 |
| 20160099133 | INERT-DOMINANT PULSING IN PLASMA PROCESSING SYSTEMS - A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas. | 04-07-2016 |
| 20160111259 | NOISE BASED FREQUENCY TUNING AND IDENTIFICATION OF PLASMA CHARACTERISTICS - This disclosure describes systems, methods, and apparatus for frequency tuning a power source so as to optimize power delivery to a plasma load as well as systems, methods, and apparatus for identifying characteristics and/or changes in characteristics of a plasma load. In particular, a secondary power signal can be applied concurrently with a primary power signal, the secondary power signal having a substantially lower power level, so as to tune for a global optimum of a measure of performance and/or identifying characteristics and/or changes in characteristics of a plasma load. The secondary power signal can comprise a low level signal that is jointly generated with or combined with the primary power signal, or it can comprise noise either inherent to the primary power signal or added to the primary power signal. | 04-21-2016 |
| 20160113103 | SYSTEMS AND METHODS FOR OBTAINING INFORMATION ABOUT A PLASMA LOAD - A power generation system and method for identifying characteristics of a plasma load are disclosed. The power generation system may include a power source configured to apply a primary power signal at a primary frequency to an output and one or more secondary power signals at one or more secondary frequencies to the output. A sensor is arranged to monitor a characteristic of the power delivered to the plasma load, and an identification module analyzes the monitored characteristic to extract characteristics of the plasma load. | 04-21-2016 |
| 20160120013 | PLASMA GENERATION APPARATUS - A plasma generation apparatus includes a flow path tube through which a liquid flows and which includes a concave portion and/or a convex portion on an internal wall surface thereof, a liquid feed device, a first electrode, a second electrode, a power source, and a control circuit which controls the liquid feed device and the power source. The concave portion and/or the convex portion causes, when the liquid flows therethrough, a pressure difference to be generated between at least part of the inside of the flow path tube and the external space, allowing a gas to be introduced into the liquid from the external space through a gas introduction path. The power source applies a predetermined voltage between the first electrode and the second electrode in a state in which a bubble containing the gas is generated in the liquid. | 04-28-2016 |
| 20160126063 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed. | 05-05-2016 |
| 20160126069 | PULSE PLASMA APPARATUS AND DRIVE METHOD THEREOF - A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network. | 05-05-2016 |
| 20160131587 | Method and Apparatus for Monitoring Pulsed Plasma Processes - Emitted light from a pulsed plasma system is detected, amplified and digitized over a plurality of pulse modulation cycles to produce a digitized signal over the plurality of RF modulation periods, each of which contains an amount of random intensity variations. The individual signal periods are then mathematically combined to produce a stable local reference waveform signal that has decreased random intensity variations. One mechanism for creating a stable local reference waveform signal is by subdividing each of the individual signal periods into a plurality of subunits and the mathematically averaging the respective subunits within the modulation period to produce the stable local reference waveform signal for the modulation period. The stable local reference waveform signal can then be compared to other instantaneous waveform signals from the pulsed plasma system, or waveform parameters can be derived using various signal processing techniques such as Fourier analysis. | 05-12-2016 |
| 20160139617 | ADJUSTABLE NON-DISSIPATIVE VOLTAGE BOOSTING SNUBBER NETWORK - This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. | 05-19-2016 |
| 20160141151 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus including: a circular waveguide connected with a vacuum vessel, and through which a circularly polarized wave of an electric field for plasma formation propagates; a processing chamber which is arranged below the circular waveguide, and in which plasma is formed; a circularly polarized wave generator, which is arranged in the waveguide; a circularly polarized wave adjuster which is connected with the circular waveguide below the circularly polarized wave generator; a circularly polarized wave detector which is below the circularly polarized wave adjuster; and a controller which adjusts an operation of the circularly polarized wave adjuster according to an output from the circularly polarized wave detector, in which the circularly polarized wave adjuster adjusts a length of a protrusion of a dielectric stub into the circular waveguide based on a signal from the controller. | 05-19-2016 |
| 20160141155 | Current Threshold Response Mode for Arc Management - This disclosure describes systems, methods, and apparatuses for extinguishing electrical arcs in a plasma processing chamber. Once an arc is detected, the steady state voltage provided to the plasma processing chamber can be reduced, and the current being provided to the chamber decays below a steady state value as the arc is extinguished. When the current falls to or below a current threshold, the voltage can be ramped back up bringing the voltage and current back to steady state values. This technique enables power to return to a steady state level faster than traditional arc mitigation techniques. | 05-19-2016 |
| 20160150628 | ANTENNA STRUCTURE AND PLASMA GENERATING DEVICE - An antenna structure includes four induction antennas which have the same structure, are connected in parallel and are disposed to be overlapped. The induction antennas include an external upper section arranged on a first quadrant of a first layer, an internal upper section connected to the external upper section and arranged on a second quadrant of the first layer, an internal lower section connected to the internal upper section and arranged on a third quadrant of a second layer arranged on a lower part of the first layer, and an external lower section connected to the internal lower section and arranged on a fourth quadrant of the second layer. An RF power is supplied to one end of the external upper section, and the other end of the external lower section is grounded. | 05-26-2016 |
| 20160150629 | ANTENNA STRUCTURE AND PLASMA GENERATING DEVICE - An antenna structure includes four induction antennas which have the same structure, are connected in parallel and are disposed to be overlapped. The induction antennas include an external upper section arranged on a first quadrant of a first layer, an internal upper section connected to the external upper section and arranged on a second quadrant of the first layer, an internal lower section connected to the internal upper section and arranged on a third quadrant of a second layer arranged on a lower part of the first layer, and an external lower section connected to the internal lower section and arranged on a fourth quadrant of the second layer. An RF power is supplied to one end of the external upper section, and the other end of the external lower section is grounded. | 05-26-2016 |
| 20160157330 | Cavity Resonator of Microwave Plasma Generating Apparatus | 06-02-2016 |
| 20160163514 | Adaptive Periodic Waveform Controller - A repeating setpoint generator module selectively varies a setpoint for an output parameter according to a predetermined pattern that repeats during successive time intervals. A closed-loop module, during a first one of the time intervals, generates N closed-loop values based on N differences between (i) N values of the setpoint at N times during the first one of the time intervals and (ii) N measurements of the output parameter at the N times during the first one of the time intervals, respectively. An adjusting module, during the first one of the time intervals, generates N adjustment values based on N differences between (i) N values of the setpoint at the N times during a second one of the time intervals and (ii) N measurements of the output parameter at the N times during the second one of the time intervals, respectively. | 06-09-2016 |
| 20160163519 | METHOD AND APPARATUS FOR PLASMA IGNITION IN HIGH VACUUM CHAMBERS - A new method and apparatus is described for igniting a plasma from high vacuum. The ignition method uses a small, short term and quick rise in gas flow into plasma chamber while being excited by RF power to ignite the plasma and then drops the gas flow to fixed input flow rate to maintain the plasma. This plasma starting technique does not use electronic means for ignition. The associated apparatus has a gas buffer chamber in fluid communication with the gas source and the plasma chamber, the gas buffer chamber having a small volume gas that is refilled when the device is off. A flow restriction between the gas source and the gas buffer chamber has a maximum flow rate therethrough of 30 sccm (standard cubic centimeters per minute) or less. A valve between the plasma chamber and the gas buffer chamber permits flow between the gas chamber and the plasma chamber, wherein, upon opening the valve, gas is admitted into the plasma chamber and pressure in the plasma chamber rises temporarily causing plasma ignition if the plasma excitation device is energized. The flow restriction maintains the gas flow during plasma operation to maintain a pressure between approximately 0.5 Pa and approximately 6-7 Pa. | 06-09-2016 |
| 20160165713 | HIGH-FREQUENCY POWER SUPPLY DEVICE, AND PLASMA IGNITION METHOD - A high-frequency power supply device is provided with a plasma ignition step that supplies pulse power to ignite plasma, and drive power supply step to supply drive power for maintaining the plasma being generated. In the plasma ignition step, an ignition pulse being applied in an ignition pulse output operation is configured as including a main pulse that induces ignition, and a prepulse with lower power than the power of the main pulse and being applied at a stage prior to the main pulse. Since the ignition pulse is configured as including the main pulse and the prepulse, this enables protection of a high-frequency power source against reflected wave power, as well as reliably igniting the plasma. | 06-09-2016 |
| 20160172162 | Computation Of Statistics For Statistical Data Decimation | 06-16-2016 |
| 20160189932 | TUNING A PARAMETER ASSOCIATED WITH PLASMA IMPEDANCE - Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value. | 06-30-2016 |
| 20160254124 | RF Multi-Feed Structure To Improve Plasma Uniformity | 09-01-2016 |
| 20160379804 | CONTROLLING ION ENERGY WITHIN A PLASMA CHAMBER - Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold. | 12-29-2016 |
| 20160381779 | METHOD AND APPARATUS FOR OPERATING TRAVELING SPARK IGNITER AT HIGH PRESSURE - An ignition circuit and a method of operating an igniter (preferably a traveling spark igniter) in an internal combustion engine, including a high pressure engine. A high voltage is applied to electrodes of the igniter, sufficient to cause breakdown to occur between the electrodes, resulting in a high current electrical discharge in the igniter, over a surface of an isolator between the electrodes, and formation of a plasma kernel in a fuel-air mixture adjacent said surface. Following breakdown, a sequence of one or more lower voltage and lower current pulses is applied to said electrodes, with a low “simmer” current being sustained through the plasma between pulses, preventing total plasma recombination and allowing the plasma kernel to move toward a free end of the electrodes with each pulse. | 12-29-2016 |
| 20180027643 | HYBRID GENERATORS AND METHODS OF USING THEM | 01-25-2018 |
| 20190148115 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 05-16-2019 |
| 20220139674 | SYSTEMS AND METHODS COMBINING MATCH NETWORKS AND FREQUENCY TUNING - A power system for a plasma processing system and associated methods are disclosed. The power system comprises a generator with a frequency-tuning subsystem, a match network coupled between the plasma processing chamber and the generator, and means for adjusting an impedance of the match network so the frequency-tuning subsystem adjusts a frequency of power applied by the generator to a target frequency while the match network presents a desired impedance to the generator in response to variations in an impedance of a plasma in a plasma processing chamber. | 05-05-2022 |
