Class / Patent application number | Description | Number of patent applications / Date published |
257591000 | With emitter region having specified doping concentration profile (e.g., high-low concentration step) | 9 |
20090321880 | SEMICONDUCTOR DEVICE - A semicoductor device includes: a collector layer made of a first conductivity type semiconductor; an intrinsic base layer formed on the collector layer and including a second conductivity type monocrystalline silicon germanium layer; a base extraction electrode formed around the intrinsic base layer and including a second conductivity type polycrystalline silicon layer and a second conductivity type polycrystalline silicon germanium layer; and a first conductivity type emitter layer formed in an upper portion of the intrinsic base layer. A silicon layer is formed in the upper portion of the intrinsic base layer and the emitter layer includes an upper emitter region formed in an upper portion of the silicon layer and a lower emitter region formed below and in contact with the upper emitter region. | 12-31-2009 |
20110049678 | LATERAL BIPOLAR TRANSISTOR WITH COMPENSATED WELL REGIONS - Conduction between source and drain or emitter and collector regions is an important characteristic in transistor operation, particularly for lateral bipolar transistors. Accordingly, techniques that can facilitate control over this characteristic can mitigate yield loss by promoting the production of transistors that have an increased likelihood of exhibiting desired operational performance. As disclosed herein, well regions are established in a semiconductor substrate to facilitate, among other things, control over the conduction between the source and drain regions of a lateral bipolar transistor, thus mitigating yield loss and other associated fabrication deficiencies. Importantly, an additional mask is not required in establishing the well regions, thus further mitigating (increased) costs associated with promoting desired device performance. | 03-03-2011 |
20110169137 | HIGH-BETA BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURE - An NPN bipolar junction transistor is disclosed that exhibits a collector-to-emitter breakdown voltage greater than 10 volts and a beta greater than 300. The large value of beta is obtained by fabricating the transistor with an extra N-type layer that reduces recombination of electrons and holes. | 07-14-2011 |
20110291242 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which an IGBT, a control circuit for the IGBT and so on are formed on an SOI substrate divided by trenches, the invention is directed to providing the IGBT with a higher breakdown voltage, an enhanced turn-off characteristic and so on. An N type epitaxial layer is formed on a dummy semiconductor substrate, a trench is formed in the N type epitaxial layer, an N type buffer layer and then a P type embedded collector layer are formed on the sidewall of the trench and the front surface of the N type epitaxial layer, and the bottom of the trench and the P+ type embedded collector layer are covered by an embedded insulation film. The embedded insulation film is covered by a polysilicon film, and a P type semiconductor substrate is attached to the polysilicon film with an insulation film being interposed therebetween. Then the dummy semiconductor substrate is removed, thereby forming an SOI substrate having the embedded insulation film, the P+ type embedded collector layer, the N type buffer layer, the N type drift layer and so on that are exposed being almost flush with each other on the bottom of the trench. An IGBT and so on are formed on this SOI substrate. | 12-01-2011 |
20130082353 | TUNABLE ESD PROTECTION DEVICE - The present disclosure provides an ESD protection device. The device contains a bipolar junction transistor device that includes a collector, a base, and an emitter. The collector includes a first doped element and a more heavily doped second doped element disposed over the first doped element. The first and second doped elements each have a first doping polarity. The base is located adjacent to the collector and includes a third doped element having a second doping polarity different from the first doping polarity. A p-n junction is formed between the third doped element and one of the first and second doped elements. The emitter is formed over the base. The emitter includes a fourth doped element having the first doping polarity and forming a p-n junction with the third doped element. The fourth doped element is more heavily doped than the third doped element. | 04-04-2013 |
20130193557 | Electronic Device and Method for Increasing Reliability of Bipolar Transistors Under High Voltage Conditions - The invention relates to an electronic device with a bipolar transistor having an emitter, a base and a collector. The base has a first region of a first concentration of the first dopant for forming an electrically active region of the base and a second region of a second concentration of the first dopant close to the surface of the base region. The first region is separated from the second region by a region of a third concentration of the first dopant and the third concentration is lower than the first and the second concentration. | 08-01-2013 |
20130221488 | SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS - Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICS, improvement in refresh time for DRAM's, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFET's, and a host of other applications. | 08-29-2013 |
20130320500 | A bipolar semiconductor component with a fully depletable channel zone - A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor. | 12-05-2013 |
20140339678 | Ultrashallow Emitter Formation Using ALD and High Temperature Short Time Annealing - An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1ยท10 | 11-20-2014 |