| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257429000 | Charged or elementary particles | 47 |
| 20080251868 | Standard component for calibration and electron-beam system using the same - The invention provides a standard component for calibration that enables a calibration position to be easily specified in order to calibrate accurately a scale factor in the electron-beam system, and provides an electron-beam system using it. High-accuracy metrology calibration capable of specifying a calibration position can be realized by forming a mark pattern or labeled material for identifying the calibration position in proximity of a superlattice pattern of the standard component for system calibration. The standard component for calibration is one that calibrates a scale factor of an electron-beam system based on a signal of secondary charged particles detected by irradiation of a primary electron beam emitted from the electron-beam system on a substrate having a cross section of a superlattice of a multi-layer structure in which different materials are deposited alternately. The substrate have linear patterns that are on the substrate surface parallel to the multi-layer and are arranged at a fixed interval in a direction crossing the cross section of the superlattice pattern, and is so configured that the cross sections of the linear patterns may exist on substantially the same plane of the superlattice cross section, so that the linear patterns enable a position of the superlattice pattern to be identified. | 10-16-2008 |
| 20080290433 | Monolithic nuclear event detector and method of manufacture - A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in the p- substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention. | 11-27-2008 |
| 20090206428 | Direct Electron Detector - An electron detector ( | 08-20-2009 |
| 20090218647 | Semiconductor Radiation Detector With Thin Film Platinum Alloyed Electrode - A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element. | 09-03-2009 |
| 20100102408 | ELECTRON TUBE - An electron tube of the present invention includes: a vacuum vessel including a face plate portion made of synthetic silica and having a surface on which a photoelectric surface is provided, a stem portion arranged facing the photoelectric surface and made of synthetic silica, and a side tube portion having one end connected to the face plate portion and the other end connected to the stem portion and made of synthetic silica; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the photoelectric surface, and made of synthetic silica; and an electron detector arranged on the projection portion, for detecting electrons from the photoelectric surface, and made of silicon. | 04-29-2010 |
| 20100219494 | Sub-mm Wireless Ionizing Radiation Detector - One embodiment of a radiation sensing capacitor is presented. The radiation sensing capacitor may include a silicon layer and an insulator layer coupled to the silicon layer. The radiation sensing capacitor may also include a silicon-insulator interface region coupling the silicon layer to the insulator layer and a plurality of hole-trapping precursors formed in the insulator layer proximate to the silicon-insulator interface region. | 09-02-2010 |
| 20100264502 | METHODS AND SYSTEMS OF CURVED RADIATION DETECTOR FABRICATION - Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the backside is independent from the front surface, which allows thinning of the detector using standard semiconductor processing. | 10-21-2010 |
| 20110012216 | Simplified Silicon Drift Detector and Wraparound Neutron Detector - A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and/or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance. | 01-20-2011 |
| 20110031572 | HIGH POWER DENSITY BETAVOLTAIC BATTERY - To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given. | 02-10-2011 |
| 20110079865 | RADIATION DETECTION AND A METHOD OF MANUFACTURING A RADIATION DETECTOR - The invention relates to a radiation detector ( | 04-07-2011 |
| 20110095386 | Semiconductor sensor for detecting a light radiation - A semiconductor sensor for detecting a radiation including a sensitive layer obtained in an inactive layer adapted to detect a light radiation, a portion thereof having a metal layer attached thereto, while on the remaining portion of the sensitive layer there is an overlapping scintillator. A bonding wire branches from said metal layer. Said sensor is shaped so that, according to a section of the sensor, said metal layer is at a lower height with respect to the scintillator crystal, so that the bonding wire does not interfere therewith. Such a result is obtained by tapering the thickness of said inactive layer and/or interposing a transparent layer between said sensitive layer and said scintillator crystal. | 04-28-2011 |
| 20110169116 | Radiation Detector - The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p | 07-14-2011 |
| 20110180890 | RADIOGRAPHIC IMAGE DETECTOR, METHOD OF PRODUCING THE SAME, AND PROTECTIVE MEMBER - A method of producing a radiographic image detector includes: preparing a thin-film transistor substrate comprising an insulating substrate and a thin-film transistor that is disposed on a surface of the insulating substrate at a first side; attaching, to the thin-film transistor substrate, a protective member comprising a protective member support and an adhesive layer that includes conductive particles and that is disposed on the protective member support, such that the adhesive layer and a surface of the thin-film transistor substrate at the first side contact each other; polishing a surface of the thin-film transistor substrate at a second side opposite to the first side, after the attaching of the protective member; separating and removing the protective member from the thin-film transistor substrate after the polishing; and providing a scintillator layer on a surface of the thin-film transistor substrate at the first side, after the removing of the protective member. | 07-28-2011 |
| 20110193186 | RADIATION DETECTOR MODULE - A radiation detector module includes a radiation detecting substrate including a plurality of semiconductor devices mounted thereon for detecting radiation, a shielding material at a position nearer to an incident side of the radiation than the radiation detecting substrate, the shielding material being capable of shielding a portion of the radiation, and a fixing member including a bottom, a first side wall extending in a normal direction to the bottom from one end of the bottom, and a second side wall extending in the normal direction to the bottom from an other end of the bottom. The first side wall and the second side wall each include a substrate supporting portion for supporting the radiation detecting substrate, and a shielding material supporting portion at a predetermined position relative to the substrate supporting portion for supporting the shielding material. | 08-11-2011 |
| 20110241144 | Nuclear Batteries - We introduce a new technology for Manufactureable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh environments. In order to optimize the performance of betavoltaic batteries for these applications or any other application, it is desirable to maximize the efficiency of beta particle energy conversion into power, while at the same time increasing the power density of an overall device. The small (submicron) thickness of the active volume of both the isotope layer and the semiconductor device is due to the short absorption length of beta electrons. The absorption length determines the self absorption of the beta particles in the radioisotope layer as well as the range, or travel distance, of the betas in the semiconductor converter which is typically a semiconductor device comprising at least one PN junction. Various devices and methods to solve the current industry problems and limitations are presented here. | 10-06-2011 |
| 20110248366 | RADIATION-DETECTING DEVICE AND METHOD OF MANUFACTURING SAME - A method of manufacturing a radiation-detecting device including spaced first columnar scintillators, second columnar scintillators which are located between the neighboring first columnar scintillators and which are spaced from the first columnar scintillators, and photodetecting elements overlapping with the first columnar scintillators includes a step of preparing the substrate such that the substrate has a surface having an uneven section having protruding portions and a plurality of spaced flat sections surrounded by the uneven section and also includes a step of forming the first columnar scintillators and the second columnar scintillators on the flat sections and the protruding portions, respectively, by depositing a scintillator material on the substrate having the uneven section and the flat sections. The uneven section has recessed portions and satisfies the following inequality: | 10-13-2011 |
| 20110266643 | Solid state neutron detector - A low-cost device for the detection of thermal neutrons. Thin layers of a material chosen for high absorption of neutrons with a corresponding release of ionizing particles are stacked in a multi-layer structure interleaved with thin layers of hydrogenated amorphous silicon PIN diodes. Some of the neutrons passing into the stack are absorbed in the neutron absorbing material producing neutron reactions with the release of high energy ionizing particles. These high-energy ionizing particles pass out of the neutron absorbing layers into the PIN diode layers creating electron-hole pairs in the intrinsic (I) layers of the diode layers; the electrons and holes are detected by the PIN diodes. | 11-03-2011 |
| 20110291210 | BETAVOLTAIC POWER CONVERTER DIE STACKING - A power converter comprises a first die and a second die. Each die comprises a semiconductor substrate comprising a junction for converting nuclear radiation particles to electrical energy, the junction of each semiconductor substrate comprising a first side and a second side, a first electrode comprising a nuclear radiation-emitting radioisotope deposited on the semiconductor substrate, the first electrode being electrically connected to the first side of the junction, and a second electrode deposited on the semiconductor substrate, the second electrode being electrically connected to the second side. A bond is formed between one of the first electrode or the second electrode of the first die and one of the first electrode or the second electrode of the second die, wherein the bond forms an electrical contact between the bonded electrodes. | 12-01-2011 |
| 20110298071 | HIGH POWER DENSITY BETAVOLTAIC BATTERY - To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given. | 12-08-2011 |
| 20120001282 | RADIATION DETECTOR - A radiation detector of a compact size and producing almost no image defect is disclosed, comprising a first radiation-transmissive substrate, a first adhesive layer, a second radiation-transmissive substrate, a scintillator layer and an output substrate provided with a photoelectric conversion element layer which are provided sequentially in this order, wherein an arrangement region of the scintillator layer in a planar direction of the layer includes an arrangement region of the photoelectric conversion element layer in a planar direction of the layer and an arrangement region of the first substrate in a planar direction of the substrate, and the arrangement region of the first substrate includes the arrangement region of the photoelectric conversion element layer; and when the arrangement region of the scintillator layer is divided to plural areas, a coefficient of variation of filling factor is 20% or less which is defined as a standard deviation of filling factor of phosphor of the plural areas, divided by an average value of the filling factor. | 01-05-2012 |
| 20120007197 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus comprising a plurality of pixels each including a photoelectric conversion element, and a light shielding layer which covers the photoelectric conversion element is provided. The light shielding layer comprises a first light shielding portion which covers at least part of a region between the photoelectric conversion elements that are adjacent to each other, and a second light shielding portion for partially shielding light incident on the photoelectric conversion element of each of the plurality of pixels. An aperture is provided for the light shielding layer, the remaining component of the incident light passing through the aperture. A shape of the aperture includes a cruciform portion including a portion extending in a first direction and a portion extending in a second direction that intersects the first direction. | 01-12-2012 |
| 20120012957 | NEUTRON DETECTOR WITH WAFER-TO-WAFER BONDING - A method of manufacturing a neutron detector comprises forming a first wafer by at least forming an oxide layer on a substrate, forming an active semiconductor layer on the oxide layer, and forming an interconnect layer on the active semiconductor layer, forming at least one electrically conductive pathway extending from the interconnect layer through the active semiconductor layer and the oxide layer, forming a circuit transfer bond between the interconnect layer and a second wafer, removing the substrate of the first wafer after forming the circuit transfer bond, depositing a bond pad on the oxide layer after removing the substrate of the first wafer, wherein the bond pad is electrically connected to the electrically conductive pathway, depositing a barrier layer on the oxide layer after removing the substrate of the first wafer, and depositing a neutron conversion layer on the barrier layer after depositing the barrier layer. | 01-19-2012 |
| 20120012958 | CHARGED PARTICLE COLLECTOR FOR A CMOS IMAGER - Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes. | 01-19-2012 |
| 20120043632 | METHOD TO PLANARIZE THREE-DIMENSIONAL STRUCTURES TO ENABLE CONFORMAL ELECTRODES - Methods for fabricating three-dimentional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is in contact with the first layer. A segment is formed on the second end of each pillar. The cavity regions are filled with a fill material, which may be a functional material such as a neutron sensitive material. The fill material covers each segment. A portion of the fill material is etched back to produce an exposed portion of the segment. A first electrode is deposited onto the fill material and each exposed segment, thereby forming a conductive layer that provides a common contact to each the exposed segment. A second electrode is deposited onto the first layer. | 02-23-2012 |
| 20120043633 | RADIATION DETECTOR - According to a radiation detector of this invention, a common electrode for bias voltage application and a lead wire for bias voltage supply are connected through a conductive plate as a planarly formed plate interposed therebetween. Since the conductive plate is connected instead of connecting the lead wire directly onto the common electrode, it can prevent damage to a radiation sensitive semiconductor and avoid performance degradation. Since the conductive plate is formed planarly, even if a conductive paste with high resistance is used, connection resistance can be lowered to be comparable to the use of silver paste. That is, the range of selection of the conductive paste is broadened. Also, connection can be made without using an insulating seat and performance degradation can be avoided. As a result, performance degradation can be avoided, without using an insulating seat. | 02-23-2012 |
| 20120056287 | DISPOSITIF DE DETECTION DE RAYONNEMENT ET PROCEDE DE FABRICATION - A method for manufacturing an ionizing radiation detection device having a block of a semiconductor material adapted to undergo local separations of charges between positive and negative charges under the effect of ionizing radiation. The device including a first series of at least two collecting electrodes formed on the surface of the semiconductor block, and a second series of at least two non-collecting electrodes formed on a support and separated from the semiconductor block by an insulating layer. During processing, after forming the insulating layer on the support so as to cover the non-collecting electrodes, the block of semiconductor material bearing the collecting electrodes and the support bearing the non-collecting electrodes and the insulating layer are assembled. | 03-08-2012 |
| 20120133009 | RADIATION DETECTING ELEMENT AND RADIATION DETECTING DEVICE - There has been such a problem that radiation detecting elements using semiconductor elements have a low radiation detection efficiency, since the radiation detecting elements easily transmit radiation, even though the radiation detecting elements have merits, such as small dimensions and light weight. Disclosed are a radiation detecting element and a radiation detecting device, wherein a film formed of a metal, such as tungsten, is formed on the radiation incident surface of the radiation detecting element, and the incident energy of the radiation is attenuated. The efficiency of generating carriers by way of radiation incidence is improved by attenuating the incident energy, the thickness of the metal film is optimized, and the radiation detection efficiency is improved. | 05-31-2012 |
| 20120161265 | SURFACE CONTAMINATION MONITOR - Provided is a surface contamination monitor that comprises a hand and foot contamination monitor that can be relocated to an inspection site in a simple manner. A surface contamination monitor has a folding mechanism that allows folding a monitor main body, and comprises a base ( | 06-28-2012 |
| 20120161266 | METHODS AND SYSTEMS OF ISOLATING SEGMENTED RADIATION DETECTORS USING ALUMINA - Radiation detectors can be made of n-type or p-type silicon. All segmented detectors on p-type silicon and double-sided detectors on n-type silicon require an “inter-segment isolation” to separate the n-type strips from each other; an alumina layer for isolating the strip detectors is applied, and forms negative charges at the silicon interface with appropriate densities. When alumina dielectric is deposited on silicon, the negative interface charge acts like an effective p-stop or p-spray barrier because electrons are “pushed” away from the interface due to the negative interface charge. | 06-28-2012 |
| 20120235260 | METHOD FOR MANUFACTURING SOLID-STATE THERMAL NEUTRON DETECTORS WITH SIMULTANEOUS HIGH THERMAL NEUTRON DETECTION EFFICIENCY (>50%) AND NEUTRON TO GAMMA DISCRIMINATION (>1.0E4) - Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>10 | 09-20-2012 |
| 20120267737 | SIDE SHIELDING CATHODE DESIGN FOR A RADIATION DETECTOR WITH IMPROVED EFFICIENCY - A radiation detector includes a semiconductor substrate which contains front and rear major surfaces and at least one side surface, a guard ring and a plurality of anode electrode pixels located over the rear surface of the semiconductor substrate, where each anode electrode pixel is formed between adjacent pixel separation regions, a side insulating layer formed on the at least one side surface of the semiconductor substrate, a cathode electrode located over the front major surface of the semiconductor substrate, and an electrically conductive cathode extension formed over at least a portion of side insulating layer, where the cathode extension contacts an edge of the cathode electrode. Further embodiments include various methods of making such semiconductor radiation detector. | 10-25-2012 |
| 20120313196 | 3-D TRENCH ELECTRODE DETECTORS - A three-dimensional (3D) Trench detector and a method for fabricating the detector are disclosed. The 3D-Trench detector includes a bulk of semiconductor material that has first and second surfaces separated from each other by a bulk thickness, a first electrode in the form of a 3D-Trench, and a second electrode in the form of a 3D column. The first and second electrodes extend into the bulk along the bulk thickness. The first and second electrodes are separated from each other by a predetermined electrode distance, and the first electrode completely surrounds the second electrode along essentially the entire distance that the two electrodes extend into the bulk such that the two electrodes are substantially concentric to each other. The fabrication method includes doping a first narrow and deep region around the periphery of the bulk to form the first electrode, and doping a second narrow and deep region in the center of the bulk to form the second electrode. | 12-13-2012 |
| 20130020661 | DETECTOR, METHOD FOR MANUFACTURING A DETECTOR AND IMAGING APPARATUS - A detector ( | 01-24-2013 |
| 20130037899 | SEMICONDUCTOR STRUCTURE FOR PHOTON DETECTION - A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring, which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer. | 02-14-2013 |
| 20130075848 | THREE-DIMENSIONAL BORON PARTICLE LOADED THERMAL NEUTRON DETECTOR - Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically, methods to infiltrate, intersperse and embed the neutron nano-powders to form two-dimensional and/or three-dimensional charge sensitive platforms are specified. The use of nano-powders enables conformal contact with the entire charge-collecting structure regardless of its shape or configuration. | 03-28-2013 |
| 20130193537 | SYSTEM AND METHOD FOR DETECTING PARTICLES WITH A SEMICONDUCTOR DEVICE - Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric layer. A reactive material that reacts to particles, such as neutrons emitted from nuclear material, can be incorporated into the top semiconductor layer. When the reactive material reacts to a particle emitted from nuclear material, ions are generated that can alter the charge storage layer and enable detection of the particle. | 08-01-2013 |
| 20130249030 | RADIOACTIVE RAY DETECTOR AND RADIOACTIVE RAY DETECTING APPARATUS - An object of the present invention is to provide a radioactive ray detector for enabling to reduce the parasitic capacity lower than that of the conventional art, which is generated between the semiconductor elements of the radioactive ray detectors neighboring with, and a radioactive ray detecting apparatus applying that therein. The radioactive ray detector, comprises a substrate, a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning the substrate therebetween, a first electrode pattern, which is electrically connected with the first semiconductor element on a surface facing to an opposite side of the substrate, and a second electrode pattern, which is electrically connected with the second semiconductor element on a surface facing to an opposite side of the substrate, wherein the first electrode pattern and the second electrode pattern are arranged not to overlap with each other, when seeing through the substrate in a direction of thickness thereof. | 09-26-2013 |
| 20140015082 | RADIATION DETECTOR AND METHOD OF MANUFACTURING THE SAME - A radiation detector includes a sensor substrate and a scintillator layer. The sensor substrate is configured to be capable of performing photoelectric conversion. The scintillator layer includes a first area and a second area, the first area including an activator, the second area including the activator with a concentration lower than the concentration of the activator in the first area, the scintillator layer being provided on the sensor substrate so that the first area and the second area are arranged in a thickness direction of the scintillator layer and the first area is arranged from an end portion on a side of the sensor substrate in the scintillator layer in the thickness direction. | 01-16-2014 |
| 20140061829 | HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR - An apparatus ( | 03-06-2014 |
| 20140091413 | DETECTOR DIODE - The present invention generally relates to a radiation sensor for use particularly in, but by no means exclusively, in measuring radiation dose in photon or electron fields such as for radiation medicine, including radiotherapy and radiation based diagnosis. According to the present invention, there is provided a semiconductor radiation detector comprising a radiation sensitive detector element arranged such that it forms a continuous radiation sensitive portion having surfaces oriented in at least two non-parallel directions. | 04-03-2014 |
| 20140231944 | RADIATION DETECTOR AND MEDICAL DIAGNOSTIC SYSTEM - A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector. | 08-21-2014 |
| 20140252520 | NEUTRON-DETECTING APPARATUSES AND METHODS OF FABRICATION - Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure. | 09-11-2014 |
| 20140312442 | RADIATION DETECTING ELEMENT AND RADIATION DETECTING DEVICE - There has been such a problem that radiation detecting elements using semiconductor elements have a low radiation detection efficiency, since the radiation detecting elements easily transmit radiation, even though the radiation detecting elements have merits, such as small dimensions and light weight. Disclosed are a radiation detecting element and a radiation detecting device, wherein a film formed of a metal, such as tungsten, is formed on the radiation incident surface of the radiation detecting element, and the incident energy of the radiation is attenuated. The efficiency of generating carriers by way of radiation incidence is improved by attenuating the incident energy, the thickness of the metal film is optimized, and the radiation detection efficiency is improved. | 10-23-2014 |
| 20140319635 | SEMICONDUCTOR DETECTOR - The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution. | 10-30-2014 |
| 20150295119 | CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS - A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor. | 10-15-2015 |
| 20160126381 | MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES - Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures arc described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. | 05-05-2016 |
| 20160149105 | RADIATION DETECTOR COMPRISING A COMPENSATING SENSOR - A chip for radiation measurements, the chip comprising a first substrate comprising a first sensor and a second sensor. The chip moreover comprises a second substrate comprising a first cavity and a second cavity both with oblique walls. An internal layer is present on the inside of the second cavity. The second substrate is sealed to the first substrate with the cavities on the inside such that the first cavity is above the first sensor and the second cavity is above the second sensor. | 05-26-2016 |
