Entries |
Document | Title | Date |
20080210987 | Array of Fet Transistors Having a Nanotube or Nanowire Semiconductor Element and Corresponding Electronic Device, For the Detection of Analytes - In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J | 09-04-2008 |
20080237654 | Device for Detecting a Gas or Gas Mixture - A device for detecting a gas or gas mixture having at least one first gas sensor designed as an SGFET and at least—one second, additional gas sensor designed as a Lundström-FET. The gas sensors are connected to a processing device designed to analyze the measurement signals from both types of gas sensors in order to detect the gas or gas mixture. | 10-02-2008 |
20080258179 | Hybrid molecular electronic device for switching, memory, and sensor applications, and method of fabricating same - A hybrid molecular electronic device having switching, memory, and sensor application is disclosed. In one embodiment, the device resembles a conventional field-effect transistor (FET) formed on a silicon-on-insulator (SOI) substrate. Source and drain doped regions are formed in an upper surface of the SOI substrate, and a metallization layer which can serve as a gate contact is formed on a lower surface of the SOI substrate. A channel region spanning between the doped source and drain regions is left exposed, in order that a monolayer of molecules may be formed therein. Upon application of appropriate gating voltages to the gate contact, conduction between the source and drain regions can be modulated, possibly as a result of the reduction and oxidation of the molecules grafted to the gate region. | 10-23-2008 |
20080283875 | FIELD EFFECT TRANSISTOR, BIOSENSOR PROVIDED WITH IT, AND DETECTING METHOD - A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film. | 11-20-2008 |
20080308846 | DEVICE AND METHOD FOR DETECTING BIOMOLECULES USING ADSORPTIVE MEDIUM AND FIELD EFFECT TRANSISTOR - A device for detecting biomolecules includes: a semiconductor substrate; a source region and a drain region separately provided at the substrate; a chamber formed at the substrate including a region between the source region and the drain region, the chamber configured to contain a sample including the biomolecules; and an electrode which applies a voltage to the sample in the chamber. The biomolecules are mobile with respect to the electrode and sample. Methods for detecting biomolecules are also disclosed. | 12-18-2008 |
20090008681 | ALKALOID SENSOR - An alkaloid sensor, systems comprising the same, and measurement using the systems. The alkaloid sensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a tin oxide film on the substrate, and an alkaloid acylase film immobilized on the tin oxide film, and a conductive wire connecting the MOSFET and the sensing unit. | 01-08-2009 |
20090014757 | QUANTUM WIRE SENSOR AND METHODS OF FORMING AND USING SAME - A solid-state field-effect transistor device for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a quantum wire channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance of the transistor. | 01-15-2009 |
20090085071 | SENSOR DEVICE COMPRISING ELONGATED NANOSTRUCTURES - A sensor device is provided for determining the presence and/or amount of at least one component in a fluid. The sensor device comprises at least one sensor unit, the at least one sensor unit comprising at least one elongated nanostructure and a dielectric material surrounding the at least one elongated nanostructure. The dielectric material is such that it is selectively permeable for one of the at least one component and is capable of sensing the component permeated through the dielectric material. The sensor device according to preferred embodiments shows good sensitivity and good mechanical strength. The present invention furthermore provides a method for manufacturing such a sensor device and a method for determining the presence and/or amount of at least one component in a fluid using such a sensor device. | 04-02-2009 |
20090085072 | Biosensor using nanoscale material as transistor channel and method of fabricating the same - Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time. | 04-02-2009 |
20090127589 | Methods and apparatus for measuring analytes using large scale FET arrays - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 05-21-2009 |
20090152596 | SEMICONDUCTOR FET SENSOR AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure. | 06-18-2009 |
20090152597 | BIOSENSOR AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor. | 06-18-2009 |
20090152598 | BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities. | 06-18-2009 |
20090278175 | METHOD FOR FORMING EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET) BASED SENSOR AND THE SENSOR THEREFROM - The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact. | 11-12-2009 |
20090283805 | BIOSENSOR CONTAINING RUTHENIUM, MEASUREMENT USING THE SAME AND THE APPLICATION THEREOF - A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit. | 11-19-2009 |
20090294805 | Virtual semiconductor nanowire, and methods of using same - A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone. | 12-03-2009 |
20090321792 | SEPARATIVE EXTENDED GATE FIELD EFFECT TRANSISTOR BASED URIC ACID SENSING DEVICE, SYSTEM AND METHOD FOR FORMING THEREOF - A separative extended gate field effect transistor based uric acid sensing device is provided, including: a substrate; a conductive layer including a silver paste layer on the substrate and a graphite-based paste layer on the silver paste layer; a conductive wire extended from the conductive layer; a titanium dioxide layer on the conductive layer; and a uric acid enzyme sensing film on the titanium dioxide layer. | 12-31-2009 |
20100012987 | Field Effect Transistor Based Sensor - The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte. | 01-21-2010 |
20100065892 | Bio-sensor and method of manufacturing the same - A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape. | 03-18-2010 |
20100090254 | BIOSENSOR AND MANUFACTURING METHOD THEREOF - Provided is a biosensor which can detect a specific biomaterial by an interaction between target molecules and probe molecules, and a manufacturing method thereof. The biosensor includes: a first conductive semiconductor substrate; a second conductive doping layer formed on the semiconductor substrate; an electrode formed on top of both opposite ends of the doping layer; and probe molecules immobilized on the doping layer. | 04-15-2010 |
20100090255 | Electronic component - An electronic component includes at least one electrode and at least one gas-sensitive region on a substrate. The gas-sensitive region is coated by at least one electrically conductive, gas-sensitive layer, and the electrode contacts the gas-sensitive layer. At least a part of the at least one electrode covers a part of the gas-sensitive region. | 04-15-2010 |
20100133591 | METHOD FOR PASSIVATING A FIELD-EFFECT TRANSISTOR - The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element. | 06-03-2010 |
20100148222 | GAS SENSOR HAVING A FIELD-EFFECT TRANSISTOR - A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer being applied on the gate region. A porous adhesive agent is provided for the adhesion of the gas-sensitive layer in the gate region. | 06-17-2010 |
20100207171 | METHOD FOR SODIUM ION SELECTIVE ELECTRODE, SODIUM ION SELECTIVE ELECTRODE THEREFROM AND SODIUM ION SENSING DEVICE - The invention provides a method for forming a sodium ion selective electrode, including: (a) providing a conductive substrate; (b) forming a conductive wire which extends from the conductive substrate for external contact; and (c) forming a sodium ion sensing film on the conductive substrate, wherein the method for forming the conductive substrate includes: providing a substrate; and forming a conductive layer on the substrate. | 08-19-2010 |
20100224913 | One-dimensional FET-based corrosion sensor and method of making same - A field effect transistor corrosion sensor ( | 09-09-2010 |
20100230731 | Circuitry and method - An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s). | 09-16-2010 |
20100270595 | Device for Detection of a Gas or Gas Mixture and Method for Manufacturing Such a Device - A device for detecting a gas or gas mixture has a first and a second gas sensor. The first gas sensor is a MOSFET, which comprises a first source, a first drain, a first channel zone disposed between the latter elements, and a first gas sensitive layer capacitively coupled to the first channel zone that contains palladium and reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensor has, in a semiconductor substrate, a second source, a second drain, and a second channel zone between the latter elements, which is capacitively coupled via an air gap to a suspended gate. The latter comprises a second gas sensitive layer that reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensitive layer is arranged on a support layer and faces the air gap. The support layer is formed by another semiconductor substrate, and the first gas sensor is integrated in the front side of the second semiconductor substrate facing away from the air gap. | 10-28-2010 |
20100276734 | ELECTROCHEMICAL BIOSENSOR ARRAYS AND SYSTEMS AND METHODS OF MAKING SAME - Electrochemical biosensor arrays and systems, as well as methods of making the electrochemical biosensor arrays and systems, are described herein. The electrochemical biosensor systems can be used with CMOS detection circuits that have a plurality of chemical detection and/or actuation channels or sites. The biosensor systems generally include a first inert conducting electrode disposed on a first portion of a CMOS detection circuit and a polymeric layer adjacent the first inert conducting electrode. The biosensor systems can also include a capture biomolecule bound to the polymeric layer. The biosensor system can also include the CMOS detection and/or actuation circuit having a plurality of channels. | 11-04-2010 |
20100283087 | Electric Component - An electric component comprising a sensor and/or actuator chip with a substrate on which a passivating layer and a sensor and/or actuator structure consisting of an active surface area is arranged. The chip is surrounded by an encapsulation having an opening which forms an access to the at least one active surface area. A layer stack is arranged on the substrate, said stack of layers comprising from the passivating layer to the substrate at least one first strip conductor layer, a first electric insulating layer, a second strip conductor layer and a second electric insulating layer. The first conductor strip layer is fully arranged outside the area of the chip covered by the opening. At least one conductor strip of the second conductor strip layer is connected to the sensor and/or actuator structure. | 11-11-2010 |
20100301398 | METHODS AND APPARATUS FOR MEASURING ANALYTES - Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 12-02-2010 |
20100301399 | Sensitive field effect transistor apparatus - The invention discloses a sensitive field effect transistor apparatus, which uses the inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of sensitive membrane on hydrogen ion is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. The differential amplifier is used to read signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus. | 12-02-2010 |
20110018038 | ION SENSITIVE FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREOF - The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer. | 01-27-2011 |
20110031537 | SENSOR ELEMENT OF A GAS SENSOR - A sensor element of a gas sensor for determining gas components in gas mixtures is provided, which includes a field-effect transistor having a source electrode, a drain electrode, and a gate electrode. The gate electrode includes a gate metallization, which is in contact with an insulation layer or a semiconductor substrate of the field-effect transistor via a boundary layer, the boundary layer being formed by modifying the surface of the insulation layer or the semiconductor substrate using metal alkoxides, metal amides, metal halogenides and/or metal alkyls. Furthermore, a method for producing said sensor element is provided. | 02-10-2011 |
20110108892 | DETECTOR OF BIOLOGICAL OR CHEMICAL MATERIAL AND CORRESPONDING ARRAY OF DETECTORS - A detector of biological or chemical material, including a MOS transistor having its channel region inserted between upper and lower insulated gates, the upper insulated gate including a detection layer capable of generating a charge at the interface of the upper insulated gate and of its gate insulator, the thickness of the upper gate insulator being smaller than the thickness of the lower gate insulator. | 05-12-2011 |
20110121368 | Gas-sensitive semiconductor device - A gas-sensitive semiconductor device having a semiconductive channel ( | 05-26-2011 |
20110133255 | APPARATUS AND METHOD FOR MOLECULE DETECTION USING NANOPORES - A detector device: a source region (S), a drain region (D) and a gate contact ( | 06-09-2011 |
20110147802 | Sensor - A sensor configured to sense an external event including: a first component having a first impedance that changes when the external event occurs and being connected between a reference voltage node and an output node wherein the output node is configured to provide, when the external event occurs, a feedback signal to the first component that further changes the first impedance and wherein the first component is a field effect transistor comprising: a gate formed from a conductive core of a nanowire and connected to the output node; a gate dielectric formed from an insulating shell of the nanowire; a source/drain electrode connected to the output node; a source/drain electrode connected to the reference node; and a channel extending between the source/drain electrodes. | 06-23-2011 |
20110147803 | Gas Sensor And Flip-Chip Method For Its Manufacture - A sensor element is described that includes at least one semiconductor component having a gas-sensitive layer which is attached to a substrate by the flip-chip method, the gas-sensitive layer facing the substrate and a supply arrangement being provided to supply a gas to be examined to the gas-sensitive layer. The semiconductor component is enclosed in a casing. Also described is a method for manufacturing the sensor element, in which a semiconductor component having a gas-sensitive layer is attached by the flip-chip method to a substrate in such a way that the gas-sensitive layer faces the substrate. After that, the casing is applied by a plasma sputtering method, in particular an atmospheric plasma sputtering method. Finally, a use of the sensor element in the exhaust system of an internal combustion engine is also described. | 06-23-2011 |
20110163353 | GAS SENSOR - A gas sensor having at least one gas-sensitive electrically conductive layer having a surface region which can be brought into contact with a target gas and in which the work function depends on the concentration of the target gas in contact therewith. At least one electrical potential sensor is capacitively coupled to the surface region via an air gap. The surface region is structured by at least one recess in which a flat material element which is connected to the gas-sensitive layer in an electrically conductive manner is arranged, the material of the material element differing from that of the gas-sensitive layer and comprising a metal and/or a metal-containing chemical compound. | 07-07-2011 |
20110169056 | HYDROGEN ION-SENSITIVE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF - A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified. | 07-14-2011 |
20110169057 | Gas Sensor - [Object] To provide a gas sensor having a self-diagnostic function with a simplified structure. | 07-14-2011 |
20110180856 | SENSING DEVICE - Provided is a sensing device, which includes a reactive material layer ( | 07-28-2011 |
20110193139 | CELL MEASURING DEVICE - There is provided a cell measuring apparatus that can measure cells efficiently. In a cell measuring apparatus | 08-11-2011 |
20110193140 | Electronic component for high temperatures - A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium. | 08-11-2011 |
20110198674 | GAS-SENSITIVE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING A GAS-SENSITIVE FIELD EFFECT TRANSISTOR - A gas-sensitive field effect transistor is described which includes a semiconductor substrate having a main substrate surface. The semiconductor substrate has a source region, a gate region, and a drain region. The field effect transistor also includes an insulating layer which has a first main surface facing the main substrate surface, and a second main surface facing away from the main substrate surface. The insulating layer at least partially covers the main substrate surface, and in the area of the gate region has an opening or a region having reduced layer thickness having beveled side walls. An area of the opening in the second main surface is larger than an area of the opening in the first main surface. Lastly, the field effect transistor includes a gate electrode layer which covers at least a partial region of the first main surface of the insulating layer, a region of the beveled side walls of the opening, and an area of the gate region. The gate electrode layer includes a material or a structuring which causes a change in the electrical properties of the gate electrode layer upon contact with a predefined gas. | 08-18-2011 |
20110241081 | METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 10-06-2011 |
20110248319 | METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 10-13-2011 |
20110248320 | METHODS AND APPARATUS FOR MEASURING ANALYTES - Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 10-13-2011 |
20110260219 | PROTECTIVE LAYERS SUITABLE FOR EXHAUST GASES FOR HIGH-TEMPERATURE CHEMFET EXHAUST GAS SENSORS - In a method for producing a sensor element including at least one sensitive component, a masking layer made of a material which is thermally decomposable without residue is applied to the sensitive component, the sensitive component being essentially covered by the masking layer, a protective layer made of a temperature-stable material is applied to the masking layer, and the masking layer is removed by pyrolysis or a low-temperature-guided oxygen plasma. The resulting sensor element includes at least one sensitive component covered by a protective layer made of a temperature-stable material, the sensitive component and the protective layer being placed at a distance from each other. | 10-27-2011 |
20110272747 | Electronic component - An electronic component includes a printed conductor structure on a substrate, as well as a film which contacts the printed conductor structure. The film has a smaller layer thickness than the printed conductor. The printed conductor structure has a region which is covered by the film for the purpose of contacting. | 11-10-2011 |
20110298015 | SENSING DEVICE - A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide. | 12-08-2011 |
20110303953 | GAS SENSOR AND METHOD FOR MANUFACTURING THE GAS SENSOR - It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element of a gas sensor, and a transistor which includes an oxide semiconductor layer in contact with a film having a gas barrier property and which forms a detection circuit are formed over one substrate by the same process, whereby a gas sensor using these transistors may be formed. | 12-15-2011 |
20110316054 | Method, Apparatus, and System for Micromechanical Gas Chemical Sensing Capacitor - A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured. | 12-29-2011 |
20120001235 | CHEMICALLY SENSITIVE SENSOR WITH LIGHTLY DOPED DRAINS - A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes. | 01-05-2012 |
20120001236 | ONE-TRANSISTOR PIXEL ARRAY WITH CASCODED COLUMN CIRCUIT - To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or | 01-05-2012 |
20120001237 | TWO-TRANSISTOR PIXEL ARRAY - A two-transistor (2T) pixel comprises a chemically-sensitive transistor (ChemFET) and a selection device which is a non-chemically sensitive transistor. A plurality of the 2T pixels may form an array, having a number of rows and a number of columns. The ChemFET can be configured in a source follower or common source readout mode. Both the ChemFET and the non-chemically sensitive transistor can be NMOS or PMOS device. | 01-05-2012 |
20120012900 | SEMICONDUCTOR BIO-SENSORS AND METHODS OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor bio-sensor comprises providing a substrate, forming a first dielectric layer on the substrate, forming a patterned first conductive layer on the first dielectric layer, the patterned first conductive layer including a first portion and a pair of second portions, forming a second dielectric layer, a third dielectric layer and a fourth dielectric layer in sequence over the patterned first conductive layer, forming cavities into the fourth dielectric layer, forming vias through the cavities, exposing the second portions of the patterned first conductive layer, forming a patterned second conductive layer on the fourth dielectric layer, forming a passivation layer on the patterned second conductive layer, forming an opening to expose a portion of the third dielectric layer over the first portion of the patterned first conductive layer, and forming a chamber through the opening. | 01-19-2012 |
20120012901 | Selective Functionalization by Joule Effect Thermal Activation - The invention relates to a method for functionalizing a conductive or semiconductor material (M) by covalent grafting of receptor molecules (R) to its surface, said method comprising the following steps: (i) applying, across the terminals of a source electrode and a drain electrode located on either side of the material (M), sufficient potential difference to thermally activate the material (M) with respect to the grafting reaction of the molecules (R); and (ii) placing the material (M) thus activated in contact with a liquid or gaseous medium containing receptor molecules (R), thereby obtaining a material (M) functionalized by covalently grafted receptor molecules (R). | 01-19-2012 |
20120032235 | Backside Stimulated Sensor with Background Current Manipulation - A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current. | 02-09-2012 |
20120037961 | Methods and Apparatus for Measuring Analytes Using Large Scale FET Arrays - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 02-16-2012 |
20120056248 | ONE-TRANSISTOR PIXEL ARRAY - To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Configurable pixels can be created to allow both common source read out as well as source follower read out. A plurality of the 1T pixels may form an array, having a number of rows and a number of columns and a column readout circuit in each column. | 03-08-2012 |
20120061733 | METHODS AND APPARATUS FOR DETECTING MOLECULAR INTERACTIONS USING FET ARRAYS - Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. | 03-15-2012 |
20120091512 | MICROSYSTEM FOR ANALYZING BLOOD - The present disclosure utilizes the MEMS (Micro Electro Mechanical Systems) process and packaging method to produce a microsystem for analyzing blood which is capable of detecting several kinds of ions. The microsystem for analyzing blood has a miniaturized reference electrode, so size of the microsystem can be greatly reduced. The microsystem further has a gate detecting area larger than a conventional planar ISE or a conventional ISFET does, so interference with signals can be avoided, and packaging difficulty and blood leakage can be reduced. Therefore, the microsystem is thin and small, reacts rapidly, and has a high accuracy, and a high compatibility with IC (integrated circuit) process. In addition, the microsystem has high stability of long-term potential, low offset-potential characteristics, low alternating current impedance, high stability of dynamic reference potential, low electrochemical noises and high reproducibility of the electrode. | 04-19-2012 |
20120139011 | ION SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSOR REGION - An ion sensitive sensor having an EIS structure, including: a semiconductor substrate, on which a layer of a substrate oxides is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable, intermediate insulator, which is deposited on the adapting or matching layer; and an ion sensitive, sensor layer, which is applied on the intermediate insulator. The adapting or matching layer differs from the intermediate insulator and the substrate oxide in its chemical composition and/or structure. The adapting or matching layer and the ion sensitive, sensor layer each have an electrical conductivity greater than that of the intermediate insulator. There is an electrically conductive connection between the adapting or matching layer and the ion sensitive, sensor layer. | 06-07-2012 |
20120153360 | METHOD AND DEVICE FOR REGENERATING A HYDROGEN SENSOR - The regeneration method relates to a hydrogen sensor, which comprises a transistor of the MOS type whose gate is covered with a palladium catalyst and which is placed in a low-pressure enclosure. After a leak has been detected, a voltage is imposed on the gate of the transistor by means of an electronic circuit in order to regenerate the catalyst. The electronic circuit comprises a low-frequency DC generator and a switch for changing from the “measurement” mode to the “regeneration” mode, and vice versa. | 06-21-2012 |
20120161207 | CHEMICAL SENSING AND/OR MEASURING DEVICES AND METHODS - Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. | 06-28-2012 |
20120168826 | ONE-TRANSISTOR PIXEL ARRAY - To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or | 07-05-2012 |
20120199884 | PH SENSOR, PH MEASUREMENT METHOD, ION SENSOR, AND ION CONCENTRATION MEASUREMENT METHOD - A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode. | 08-09-2012 |
20120217550 | GAS SENSOR - A MISFET-type hydrogen gas sensor having low power consumption which can be operated for one year or longer at a low voltage power source (for example, 1.5 to 3 V) is achieved. A sensor FET is formed in a MEMS region | 08-30-2012 |
20120223370 | BIOCHEMICAL SENSOR AND METHOD OF MANUFACTURING THE SAME - A biochemical sensor and a method of manufacturing the same are disclosed. The biochemical sensor includes a substrate, a gate arranged on one side of the substrate, a gate insulating layer arranged on one side of the gate opposite to the substrate, an active layer arranged on one side of the gate insulating layer opposite to the gate, a source and a drain arranged on one side of the active layer opposite to the gate insulating layer, and a biochemical sensing layer arranged on one side of the active layer opposite to the gate insulating layer and between the source and the drain. | 09-06-2012 |
20120223371 | VIRTUAL SEMICONDUCTOR NANOWIRE, AND METHODS OF USING SAME - A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone. | 09-06-2012 |
20120267693 | Ultrasensitive Biosensors - The present invention is a biosensor apparatus that includes a substrate, a source on one side of the substrate, a drain spaced from the source, a conducting channel between the source and the drain, an insulator region, and receptors on a gate region for receiving target material. The receptors are contacted for changing current flow between the source and the drain. The source and the drain are relatively wide compared to length between the source and the drain through the conducting channel. | 10-25-2012 |
20120273845 | ELECTRONIC PH SENSOR DIE PACKAGING - A pH sensor is provided. The pH sensor comprises a substrate and an ion sensitive field effect transistor (ISFET) die comprising an ion sensing part that responds to pH, wherein the ISFET die is located over the substrate. The pH sensor also comprises a protective layer formed over at least a portion of an outer surface of the ISFET die and at least a portion of the substrate. Further, the pH sensor comprises a cover member mechanically coupled to the protective layer, wherein the cover member houses the ISFET die and the substrate, and wherein the cover member defines an opening proximate to the ion sensing part. | 11-01-2012 |
20120273846 | Sensor for Detecting a Component of a Gas Mixture - A sensor for detecting a first component in a gas mixture is disclosed having a gas-sensitive electrode and a catalyst which is arranged on and/or spaced apart from the electrode in a porous carrier ceramic. The catalyst has the effect that a second component in the gas mixture is chemically altered such that the component contributes to no substantial change in the potential of the electrode. | 11-01-2012 |
20120280284 | MICRO-FLUIDIC ELECTRONIC DEVICES AND METHOD FOR PRODUCING SUCH DEVICES - A micro-fluidic electronic device includes a micro-fluidic component and an electronic component formed on a sheet of paper. An electrically-active layer of the electronic component, such as a nano-material layer, interacts with a fluid sample deposited within a fluid reservoir of the component, and changes the electronic properties of the electronic component. This can be detected by passing an electrical signal through the electronic component. The micro-fluidic electronic device can be formed straightforwardly and inexpensively by printing or mold-casting. | 11-08-2012 |
20120280285 | CHEMICALLY SENSITIVE SENSORS WITH FEEDBACK CIRCUITS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 11-08-2012 |
20120280286 | CHEMICALLY-SENSITIVE SAMPLE AND HOLD SENSORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 11-08-2012 |
20120286332 | CHEMICALLY SENSITIVE SENSORS WITH SAMPLE AND HOLD CAPACITORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 11-15-2012 |
20120286333 | LOW NOISE CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 11-15-2012 |
20120326213 | MICROWELL STRUCTURES FOR CHEMICALLY-SENSITIVE SENSOR ARRAYS - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 12-27-2012 |
20130001653 | CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTOR BASED PIXEL ARRAY WITH PROTECTION DIODES - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 01-03-2013 |
20130009214 | MICROWELL STRUCTURES FOR CHEMICALLY-SENSITIVE SENSOR ARRAYS - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 01-10-2013 |
20130015505 | METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 01-17-2013 |
20130015506 | METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 01-17-2013 |
20130069120 | PH SENSOR AND MANUFACTURING METHOD - Disclosed is a pH sensor comprising a carrier ( | 03-21-2013 |
20130069121 | ION SENSOR, DISPLAY DEVICE, METHOD FOR DRIVING ION SENSOR, AND METHOD FOR CALCULATING ION CONCENTRATION - The present invention provides an ion sensor with which an ion concentration in a sample in which both ions are mixed can be measured with high accuracy, a display device, a method for driving the ion sensor, and a method for calculating an ion concentration. The present invention is an ion sensor that includes a field effect transistor. The ion sensor detects one of negative ions and positive ions using the field effect transistor, and consecutively thereafter detects the other of the negative ions and positive ions using the field effect transistor. | 03-21-2013 |
20130075794 | NANO-ELECTRONIC SENSORS FOR CHEMICAL AND BIOLOGICAL ANALYTES, INCLUDING CAPACITANCE AND BIO-MEMBRANE DEVICES - Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes inorganic gases, organic vapors, biomolecules, viruses and the like. A number of embodiments of capacitive sensors having alternative architectures are described. Particular examples include integrated cell membranes and membrane-like structures in nanoelectronic sensors. | 03-28-2013 |
20130119440 | BIOSENSORS INTEGRATED WITH A MICROFLUIDIC STRUCTURE - A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers. | 05-16-2013 |
20130126947 | SEMICONDUCTOR GAS SENSOR - A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode. | 05-23-2013 |
20130153969 | STRUCTURE FOR MOSFET SENSOR - A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor. | 06-20-2013 |
20130187200 | TRANSISTOR-BASED PARTICLE DETECTION SYSTEMS AND METHODS - Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow. | 07-25-2013 |
20130200437 | METHOD OF FORMING NANOGAP PATTERN, BIOSENSOR HAVING THE NANOGAP PATTERN, AND METHOD OF MANUFACTURING THE BIOSENSOR - Provided is a method of forming a nanogap pattern of a biosensor. First, an oxide layer is formed on a substrate and a first nitride layer is formed on the oxide layer. The first nitride layer is partially etched to form a first nitride layer pattern having a first gap that gradually narrows from a top portion to a bottom portion thereof and exposes the oxide layer. A second nitride layer is formed along the first nitride layer and along sidewalls and a bottom surface of the first gap. The second nitride layer is etched to form a second nitride layer pattern having a second gap narrower than the first gap on the sidewalls of the first gap. The oxide layer is etched by using the second nitride layer pattern as an etching mask to form an oxide layer pattern having a third gap, and thus, the nanogap pattern is completed. | 08-08-2013 |
20130200438 | SYSTEMS AND METHODS FOR SIGNAL AMPLIFICATION WITH A DUAL-GATE BIO FIELD EFFECT TRANSISTOR - The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. An amplification factor of the BioFET device may be provided by a difference in capacitances associated with the gate structure on the first surface and with the interface layer formed on the second surface. | 08-08-2013 |
20130214332 | NANOGRID CHANNEL FIN-FET TRANSISTOR AND BIOSENSOR - A transistor includes a source region, a drain region, and a nanogrid channel connecting the source and drain regions. The nanogrid channel includes first and second vertical channel regions connecting the source and drain regions. The first and second vertical channel regions have a space therebetween. A cross member extends from the first vertical channel region into the space. | 08-22-2013 |
20130228829 | TWO-TRANSISTOR PIXEL ARRAY - A two-transistor (2T) pixel comprises a chemically-sensitive transistor (ChemFET) and a selection device which is a non-chemically sensitive transistor. A plurality of the 2T pixels may form an array, having a number of rows and a number of columns. The ChemFET can be configured in a source follower or common source readout mode. Both the ChemFET and the non-chemically sensitive transistor can be NMOS or PMOS device. | 09-05-2013 |
20130264611 | CHEMICALLY SENSITIVE SENSORS WITH SAMPLE AND HOLD CAPACITORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 10-10-2013 |
20130292743 | CHEMICALLY-SENSITIVE SAMPLE AND HOLD SENSORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 11-07-2013 |
20130307029 | High-Resolution Biosensor - A high-resolution biosensor for analysis of biomolecules is provided. The high-resolution biosensor comprises a functional unit comprising a conducting material with an atomic-scale thickness and a micro-nano fluidic system unit. The functional unit is capable of achieving a resolution required to detect a characteristic of individual biomolecule, and the micro-nano fluidic system unit is capable of controlling the movement and conformation of the biomolecule investigated. The functional unit comprises a first insulating layer, conducting functional layer, a second insulating layer, and a nanopore extending through the full thickness of the functional unit. The micro-nano fluidic system unit comprises a first electrophoresis electrode or micropump, a first fluidic reservoir, a second fluidic reservoir, a second electrophoresis electrode or micropump, and micro-nanometer separation channels. The nanopore connects to the micro-nanometer separation channels. Interactions between the biomolecule and conducting functional layer occur as the biomolecule translocates through the nanopore of the functional unit. | 11-21-2013 |
20130334578 | MOLECULE SENSOR DEVICE - A molecule sensor included in a molecule sensor device has a semiconductor substrate, a bottom gate, a source portion, a drain portion, and a nano-scale semiconductor wire. The bottom gate is for example a poly-silicon layer formed on the semiconductor substrate and electrically insulated from the semiconductor substrate. The source portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The drain portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The nano-scale semiconductor wire is connected between the source portion and the drain portion, formed on the bottom gate, insulated from the bottom gate, and has a decoration layer thereon for capturing a molecular. The source portion, drain portion, and nano-wire semiconductor wire are for example another poly-silicon layer. The bottom gate receives a specified voltage to change an amount of surface charge carriers of the nano-scale semiconductor wire. | 12-19-2013 |
20130334579 | MANUFACTURING METHOD OF A GRAPHENE-BASED ELECTROCHEMICAL SENSOR, AND ELECTROCHEMICAL SENSOR - A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure. | 12-19-2013 |
20140021516 | BIOSENSORS INTEGRATED WITH A MICROFLUIDIC STRUCTURE - A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers. | 01-23-2014 |
20140035007 | Gas Sensor for Determining Substances Contained in a Gas Mixture and Method for Producing such a Sensor - The present disclosure relates to a gas sensor for determining substances contained in a gas mixture, comprising a substrate on which a source electrode, a drain electrode and a gate electrode are arranged, at least one electrically insulating layer being arranged between the substrate and the gate electrode, the gate electrode comprising an electrically conductive ceramic material, and the gate electrode having a range of variation of its thickness that is greater than or equal to one quarter of its total thickness. Such a gas sensor may have in particular improved measuring characteristics and, furthermore, allow itself to be produced in an improved way. The present disclosure also relates to a method for producing such a gas sensor. | 02-06-2014 |
20140054651 | RELIABLE NANOFET BIOSENSOR PROCESS WITH HIGH-K DIELECTRIC - Provided are semiconductor field effect sensors including a high-k thin film gate dielectric. The semiconductor field effect sensors described herein exhibit high detection sensitivity and enhanced reliability when placed in contact with liquids. Also disclosed are semiconductor field effect sensors having optimized fluid gate electrode voltages and/or back gate electrode voltages for improved detection sensitivity. | 02-27-2014 |
20140061728 | Gate Biasing Electrodes For FET Sensors - A FET sensor with a gate biasing electrode is disclosed in one embodiment. In another embodiment, a process for forming a finFET sensor with a polysilicon gate biasing electrode is disclosed. In a further embodiment, a process for forming a finFET sensor with a single crystal gate biasing electrode is disclosed. | 03-06-2014 |
20140061729 | ION SENSITIVE FIELD EFFECT TRANSISTOR - A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor. There is also provided a method of manufacturing an I on Sensitive Field Effect Transistor (ISFET) utilizing CMOS processing steps, the method comprising forming an ion sensitive recess for holding a liquid at least partly on top of a gate of the transistor. | 03-06-2014 |
20140131774 | FET TYPE GAS-SENSITIVE DEVICE HAVING HORIZONTAL FLOATING GATE - A FET type gas-sensitive device has a floating electrode formed in a horizontal direction. The device achieves noise reduction, process simplification, pollution control, sensing speed improvement, various sensing material applicability and mechanical stability etc. in comparison with a gas-sensitive device that is vertically stacked with a floating electrode, a sensing material layer and a control electrode. The device can be assembled easily with a plurality of gas-sensitive devices being operated by various sensing mechanisms in one substrate. | 05-15-2014 |
20140175522 | Field Effect Transistor-Based Bio Sensor - An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus. | 06-26-2014 |
20140175523 | Method of Manufacturing a Sensor Device Having a Porous Thin-Film Metal Electrode - A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD). | 06-26-2014 |
20140175524 | VERTICALLY INTEGRATED SYSTEMS - Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer. | 06-26-2014 |
20140191292 | METHODS AND SYSTEMS FOR POINT OF USE REMOVAL OF SACRIFICIAL MATERIAL - A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid. | 07-10-2014 |
20140191293 | METHODS FOR MANUFACTURING WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS - In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface. | 07-10-2014 |
20140191294 | BACKSIDE STIMULATED SENSOR WITH BACKGROUND CURRENT MANIPULATION - A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current. | 07-10-2014 |
20140203332 | SELF-ALIGNED BIOSENSORS WITH ENHANCED SENSITIVITY - Non-planar semiconductor FET based sensors are provided that have an enhanced sensing area to volume ratio which results in faster response times than existing planar FET based sensors. The FET based sensors of the present disclosure include a V-shaped gate dielectric portion located in a V-shaped opening formed in a semiconductor substrate. In some embodiments, the FET based sensors of the present disclosure also include a self-aligned source region and a self-aligned drain region located in the semiconductor substrate and on opposing sides of the V-shaped opening. In other embodiments, the FET based sensors include a self-aligned source region and a self-aligned drain region located in the semiconductor substrate and on opposing sides of a gate dielectric material portion that is present on an uppermost surface of the semiconductor substrate. | 07-24-2014 |
20140209982 | SELF-ALIGNED WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS - In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor. | 07-31-2014 |
20140209983 | INTEGRATED METAL OXIDE CHEMICAL SENSOR - A chemical sensor is described with at least one layer of metal oxide arranged between two electrodes with the length of the layer of metal oxide between the electrodes being less than 50 microns, wherein at least one interface layer is formed between the surface of at least one of the electrodes and the layer of metal oxide and wherein the interface layer lowers the contact resistance between the electrodes and the layer of metal oxide by facilitating transport of charge carriers across layer boundaries. | 07-31-2014 |
20140217477 | ELECTRIC FIELD DIRECTED LOADING OF MICROWELL ARRAY - An apparatus includes a device substrate including an array of sensors. Each sensor of the array of sensors can include a electrode structure disposed at a surface of the device substrate. The apparatus further includes a wall structure overlying the surface of the device substrate and defining an array of wells at least partially corresponding with the array of sensors. The well structure including an electrode layer and an insulative layer. | 08-07-2014 |
20140252421 | Backside CMOS Compatible BioFET with No Plasma Induced Damage - The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer. | 09-11-2014 |
20140264464 | CHEMICAL SENSOR WITH SIDEWALL SPACER SENSOR SURFACE - In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor. | 09-18-2014 |
20140264465 | CHEMICAL SENSORS WITH PARTIALLY EXTENDED SENSOR SURFACES - In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive element is on a sidewall of the opening and spaced away from an upper surface of the dielectric material, the conductive element communicating with the floating gate conductor. | 09-18-2014 |
20140264466 | CHEMICAL SENSOR WITH PROTRUDED SENSOR SURFACE - In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive element on a sidewall of the opening and extending over an upper surface of the dielectric material. | 09-18-2014 |
20140264467 | BACKSIDE SENSING BIOFET WITH ENHANCED PERFORMANCE - The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer. | 09-18-2014 |
20140264468 | BIOFET WITH INCREASED SENSING AREA - The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure. | 09-18-2014 |
20140264469 | CHEMICAL SENSOR WITH SIDEWALL SENSOR SURFACE - In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall. | 09-18-2014 |
20140264470 | CHEMICAL SENSORS WITH CONSISTENT SENSOR SURFACE AREAS - In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric. | 09-18-2014 |
20140264471 | CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT - In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element. | 09-18-2014 |
20140264472 | CHEMICAL SENSOR WITH CONSISTENT SENSOR SURFACE AREAS - In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening. | 09-18-2014 |
20140264473 | SENSOR WITH FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THIS TRANSISTOR - A field effect transistor ( | 09-18-2014 |
20140299922 | HIGH-K METAL GATE DEVICE STRUCTURE FOR HUMAN BLOOD GAS SENSING - A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area. | 10-09-2014 |
20140367748 | EXTENDED GATE SENSOR FOR pH SENSING - A sensing device includes a substrate having a source region and a drain region formed therein. A gate structure is formed over the substrate and includes a gate dielectric and a gate conductor. The gate conductor is formed on the gate dielectric and disposed between the source region and the drain region. A dielectric layer is formed over the substrate and has a depth configured to form a well over the gate conductor. A gate extension is formed in contact with or as part of the gate conductor and including a conductive material covering one or more surfaces of the well. | 12-18-2014 |
20140367749 | NANOCHANNEL PROCESS AND STRUCTURE FOR BIO-DETECTION - Nanochannel sensors and methods for constructing nanochannel sensors. An example method includes forming a sacrificial line on an insulating layer, forming a dielectric layer, etching a pair of electrode trenches, forming a pair of electrodes, and removing the sacrificial line to form a nanochannel. The dielectric layer may be formed on insulating layer and around the sacrificial line. The pair of electrode trenches may be etched in the dielectric layer on opposite sides of the sacrificial line. The pair of electrodes may be formed by filling the electrode trenches with electrode material. The sacrificial line may be removed by forming a nanochannel between the at least one pair of electrodes. | 12-18-2014 |
20140367750 | ION-SENSING CHARGE-ACCUMULATION CIRCUITS AND METHODS - An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region. | 12-18-2014 |
20150008486 | SENSOR HAVING A THIN-FILM INHIBITION LAYER - Sensors and detection systems suitable for measuring analytes, such as biomolecule, organic and inorganic species, including environmentally and medically relevant volatiles and gases, such as NO, NO2, CO2, NH3, H2, CO and the like, are provided. Certain embodiments of nanostructured sensor systems are configured for measurement of medically important gases in breath. Applications include the measurement of endogenous nitric oxide (NO) in breath, such as for the monitoring or diagnosis of asthma and other pulmonary conditions. | 01-08-2015 |
20150014752 | THIN BODY FET NANOPORE SENSOR FOR SENSING AND SCREENING BIOMOLECULES - A thin body field effect transistor (FET) nanopore sensor includes a silicon on insulator (SOI) structure having an annular shape and comprising a source, a drain and a thin body channel interposed therebetween. A nanopore is formed in a central opening of the SOI structure. A gate dielectric is disposed on the SOI structure insulating the SOI structure from a liquid gate within the nanopore. A back gate is formed around the SOI structure. A shallow trench isolation (STI) layer is formed between the SOI structure and the back gate. | 01-15-2015 |
20150028395 | pH SENSOR WITH BONDING AGENT DISPOSED IN A PATTERN - Embodiments described herein provide for a pH sensor that comprises a substrate and an ion sensitive field effect transistor (ISFET) die. The ISFET die includes an ion sensing part that is configured to be exposed to a medium such that it outputs a signal related to the pH level of the medium. The ISFET die is bonded to the substrate with at least one composition of bonding agent material disposed between the ISFET die and the substrate. One or more strips of the at least one composition of bonding agent material is disposed between the substrate and the ISFET die in a first pattern. | 01-29-2015 |
20150028396 | pH SENSOR WITH SUBSTRATE OR BONDING LAYER CONFIGURED TO MAINTAIN PIEZORESISTANCE OF THE ISFET DIE - Embodiments described herein provide for a pH sensor that is configured for use over a pressure and temperature range. The ISFET die of the pH sensor is bonded to the substrate of the pH sensor with a bonding layer that is disposed between the substrate and the ISFET die. The pressure and temperature change across the pressure and temperature range generates an environmental force in the pH sensor. Further, the substrate or the bonding layer or both change volume over the pressure and temperature range, and the substrate or the bonding layer or both are configured such that the volume change induces a counteracting force that opposes at least a portion of the environmental force. The counteracting force is configured to maintain the change in piezoresistance of the ISFET die from the drain to the source to less than 0.5% over the pressure and temperature range. | 01-29-2015 |
20150060952 | FIELD EFFECT TRANSISTOR, DEVICE INCLUDING THE TRANSISTOR, AND METHODS OF FORMING AND USING SAME - The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like. | 03-05-2015 |
20150060953 | ION-SENSITIVE LAYER STRUCTURE FOR AN ION-SENSITIVE SENSOR AND METHOD FOR MANUFACTURING SAME - In a method for manufacturing an ion-sensitive structure for an ion-sensitive sensor, first a semiconductor substrate bearing an oxide layer is provided, whereupon a metal oxide layer and a metal layer are deposited and tempered, in order to obtain a layer sequence having a crystallized metal oxide layer and an oxidized and crystallized metal layer on the semiconductor substrate bearing the oxide layer. In such case, the metal oxide layer and the metal layer have a compatible metal element, and the coating thickness d | 03-05-2015 |
20150076567 | MOLECULAR RECEPTOR-BASED CHEMICAL FIELD-EFFECT TRANSISTOR (CHEMFET) DEVICES, SYSTEMS, AND METHODS FOR IN-SITU NITRATE MONITORING IN FIELD SOILS - Embodiments include a method for securing a membrane material to a gate of a molecular receptor-based chemical field-effect transistor (CHEMFET). The method can include casting a membrane material onto an exposed region of the gate, curing the membrane material, placing the CHEMFET into a mold, inserting a single application of impervious electrically insulative resin into the mold, and securing edges of the membrane material by the single application of the impervious electrically insulative resin, thereby physically preventing lifting off of the membrane material from the gate. Embodiments include a sensor module. The sensor module can include a CHEMFET, an amplifier circuit, one or more sensor pins for contacting field ground soil, a data logger, and a wireless transceiver, among other components. | 03-19-2015 |
20150084099 | BIOSENSING WELL ARRAY WITH PROTECTIVE LAYER - The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal. | 03-26-2015 |
20150084100 | INTEGRATED CIRCUIT WITH CO2 SENSOR, COMPOSITION AND MANUFACTURING METHOD OF SUCH AN IC - Disclosed is an integrated circuit ( | 03-26-2015 |
20150097214 | STRUCTURES, APPARATUSES AND METHODS FOR FABRICATING SENSORS IN MULTI-LAYER STRUCTURES - Structures, apparatuses, and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first substrate, a first device layer, a second device layer and a third device layer. The first device layer may be on the first substrate and include a switch. The second device layer may be on the first device layer and include a sensing device. The third device layer may include one or more inter-level connection structures configured to electrically connect the switch to the sensing device. The switch may be configured to be electrically turned on in response to a selection signal. The sensing device may be configured to generate an output signal in response to the switch being turned on. | 04-09-2015 |
20150129936 | Biosensor Device and Related Method - A device includes a biosensor, a sensing circuit electrically connected to the biosensor, a quantizer electrically connected to the sensing circuit, a digital filter electrically connected to the quantizer, a selective window electrically connected to the digital filter, and a decision unit electrically connected to the selective window. | 05-14-2015 |
20150129937 | SEMICONDUCTOR DEVICE AND SELECTIVE HEATING THEREOF - One or more semiconductor devices and array arrangements and methods of formation are provided. A semiconductor device includes an ion sensing device and a heating element proximate the ion sensing device. The ion sensing device has an active region, including a source, a drain, and a channel, the channel situated between the source and the drain. The ion sensing device also has an ion sensing film situated over the channel, and an ion sensing region over the ion sensing film. Responsive to a temperature sensed by a thermal sensor proximate the ion sensing device, the heating element is selectively activated to alter a temperature of the ion sensing region to promote desired operation of the semiconductor device, such as to function as a bio sensor. Multiple semiconductor devices can be formed into an array. | 05-14-2015 |
20150137189 | CNT-BASED SENSORS: DEVICES, PROCESSES AND USES THEREOF - Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed. | 05-21-2015 |
20150137190 | HYDROGEN ION SENSOR - Provided is a hydrogen ion sensor including: a substrate having a well and a first contact, the well having a second, a third, a fourth and a fifth contacts, the second contact having the same conductive type as the well, and the third, the fourth, and the fifth contacts having an opposite conductive type to the well; a first gate insulation layer on a region between the fourth contact and the fifth contact; a second gate insulation layer on a region between the third contact and the fourth contact; and a hydrogen ion sensing unit formed on the first gate insulation layer, wherein the hydrogen ion sensing unit transfers a voltage level adjusted according to a hydrogen ion concentration of a solution to be measured, to the first gate insulation layer. | 05-21-2015 |
20150137191 | FIELD EFFECT TRANSISTOR-BASED BIO-SENSOR - An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus. | 05-21-2015 |
20150293054 | INTEGRATED CIRCUIT WITH NANOWIRE SENSORS COMPRISING A SHIELDING LAYER, SENSING APPARATUS, MEASURING METHOD AND MANUFACTURING METHOD - An integrated circuit ( | 10-15-2015 |
20150308974 | BIOSENSOR DEVICE AND RELATED METHOD - One or more circuit arrangements for a biosensor are provided. A circuit arrangement includes an ion sensitive sensor, a differentiator electrically connected to the ion sensitive sensor, an AC signal level comparator electrically connected to the differentiator and a decision circuit electrically connected to the AC signal level comparator. In some embodiments, the AC signal level comparator includes at least one of a first comparator or a second comparator. A method of detecting a bio-reaction is also provided. | 10-29-2015 |
20150316503 | Differential Pair Sensing Circuit Structures - A differential pair sensing circuit ( | 11-05-2015 |
20150316530 | USING A FIELD EFFECT DEVICE FOR IDENTIFYING TRANSLOCATING CHARGE-TAGGED MOLECULES IN A NANOPORE SEQUENCING DEVICE - A detector apparatus includes a field-effect transistor configured to undergo a change in amplitude of a source-to-drain current when at least a portion of a charge-tagged molecule translocates through the nanopore. In some implementations, the field-effect transistor is a carbon nanotube field effect transistor and the nanopore is located in a membrane. In other implementations, the field-effect transistor is a carbon nanotube field effect transistor and the nanopore is implemented in the form of a nano-channel in a semiconductor layer. | 11-05-2015 |
20150330940 | ELECTROCHEMICAL SENSOR - An electrochemical sensor, used with a measuring medium, has a sensor head ( | 11-19-2015 |
20150330941 | System and Method for Ion-Selective, Field Effect Transistor on Flexible Substrate - A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b). | 11-19-2015 |
20160011144 | Backside CMOS Compatible BioFET With No Plasma Induced Damage | 01-14-2016 |
20160011146 | SENSOR ARRAYS AND METHODS FOR MAKING SAME | 01-14-2016 |
20160033450 | AMORPHOUS THIN FILM FOR SENSING - An apparatus and method for low-power sensing, for example, sensing of chemical or biochemical analytes in a gas or liquid phase are disclosed. One aspect relates to the use of a thin continuous film without grain boundaries as a sensing layer in devices for sensing a predetermined analyte and to low power devices having such sensing layer. The sensing layer has a surface exposed to the analyte. The electrical impedance of the sensing layer changes upon adsorption of the predetermined analyte on the exposed surface of the sensing layer. The sensing layer may have a thickness in the range between about 1 nm and 100 nm, such as between about 1 nm and 30 nm. The sensing layer may be an amorphous layer. | 02-04-2016 |
20160064370 | ELECTROSTATIC DISCHARGE PROTECTION - A device comprising an electrostatic discharge protection structure, an ion sensitive field effect transistor (ISFET) having a floating gate, and a sensing layer located above the floating gate. The device is configured such that the electrical impedance from the sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from the sensing layer to the floating gate. The device can be fabricated in a standard CMOS process | 03-03-2016 |
20160116434 | A FIELD EFFECT TRANSISTOR AND A GAS DETECTOR INCLUDING A PLURALITY OF FIELD EFFECT TRANSISTORS - A field effect transistor comprising a source including a plurality of electrode projections with spaces in between. A drain includes a plurality of electrode projections each located in one of the spaces between the electrode projections of the source thereby forming a drain-source electrode connection area of alternating drain and source projections. A gate is spaced apart from the drain-source electrode area thereby forming a channel between the gate and the drain-source electrode connection area wherein the gate runs parallel to the channel. A plurality of nano-structures is located in the drain-source electrode area thereby to form an electrical connection between the electrode projections of the drain and source in the drain-source electrode connection area. The invention extends to a gas detector including a plurality of field effect transistors as described above located on a substrate. | 04-28-2016 |
20160153930 | CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT | 06-02-2016 |
20160153932 | AN INTEGRATED SENSOR DEVICE FOR CHARGE DETECTION | 06-02-2016 |
20160178568 | INTEGRATED BIOSENSOR | 06-23-2016 |
20160178570 | METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS | 06-23-2016 |
20160252478 | NANOWIRE FIELD-EFFECT SENSOR INCLUDING NANOWIRES HAVING NETWORK STRUCTURE AND FABRICATION METHOD THEREOF | 09-01-2016 |
20190145926 | WAFER LEVEL GATE MODULATION ENHANCED DETECTORS | 05-16-2019 |