Class / Patent application number | Description | Number of patent applications / Date published |
257146000 | Combined with other solid-state active device in integrated structure | 17 |
20090302347 | Semiconductor integrated circuit - A semiconductor integrated circuit includes a plurality of circuit cells each including a pad on a semiconductor chip. Each of the circuit cells includes a high-side transistor, a level shift circuit, a low-side transistor, a pre-driver, and a pad. The high-side transistor and the low-side transistor are arranged to face each other with the pad interposed therebetween. | 12-10-2009 |
20100213510 | BIDIRECTIONAL SWITCH MODULE - A first semiconductor element having a junction electrode to be connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate to be a heat dissipation plate, and a second semiconductor element having a junction electrode to be connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate to be a heat dissipation plate. The junction electrode of the first semiconductor element has the same potential as that of the first metal base plate, and the junction electrode of the second semiconductor element has the same potential as that of the second metal base plate. Also, the respective metal base plates and non-junction electrodes of the respective semiconductor elements are connected by metal thin wires, respectively, thereby configuring the bidirectional switch circuit. | 08-26-2010 |
20110062491 | POWER SEMICONDUCTOR MODULE - A power semiconductor module ( | 03-17-2011 |
20110309409 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate having an electronic circuit including a power supply line and a ground line formed thereon; and an electrostatic discharge protection element provided between the power supply line and the ground line on the semiconductor substrate, the electrostatic discharge protection element including a thyristor and a trigger diode driving the thyristor, wherein the trigger diode includes an anode diffusion layer formed on the semiconductor substrate, a cathode diffusion layer formed on the semiconductor substrate apart from the anode diffusion layer, and a gate electrode formed between the anode diffusion layer and the cathode diffusion layer on the semiconductor substrate, a gate insulation film being interposed between the semiconductor substrate and the trigger diode, and an external terminal to be connected to an external power supply is electrically connected to the gate electrode. | 12-22-2011 |
20120091504 | METHOD OF FORMING AN ESD PROTECTION DEVICE AND STRUCTURE THEREFOR - In one embodiment, a bi-directional ESD device is formed to have a third harmonic at frequencies no less than about one gigahertz wherein the third harmonic has a magnitude that is no greater than about minus thirty five dBm. | 04-19-2012 |
20130056792 | INTEGRATED CIRCUIT, ELECTRONIC DEVICE AND ESD PROTECTION THEREFOR - An integrated circuit comprising electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to an external terminal of the integrated circuit. The ESD protection circuitry comprises: a thyristor circuit comprising a first bipolar switching device operably coupled to the external terminal and a second bipolar switching device operably coupled to another external terminal, a collector of the first bipolar switching device being coupled to a base of the second bipolar switching device and a base of the first bipolar switching device being coupled to a collector of the second bipolar switching device. A third bipolar switching device is also provided and operably coupled to the thyristor circuit and has a threshold voltage for triggering the thyristor circuit, the threshold voltage being independently configurable of the thyristor circuit. The first and second switching devices are arranged so as to provide, when in use, a bidirectional snapback characteristic and a snapback voltage associated therewith. | 03-07-2013 |
20130119433 | ISOLATION STRUCTURE FOR ESD DEVICE - Among other things, an electrostatic discharge (ESD) device is provided. The ESD device comprises a dielectric isolation structure that is formed between an emitter and a collector of the ESD device. During an ESD event, current flows from the emitter, substantially under the dielectric isolation structure, to the collector, to protect associated circuitry. The dielectric isolation structure is formed to a depth that is less than a depth of at least one of the emitter or the collector, or doped regions thereof, thereby decreasing a length of a current path from the emitter to the collector, because the current is not obstructed by the dielectric isolation structure. Accordingly, the ESD device can carry higher current during the ESD event because the shorter current path has less resistance than a longer path that would otherwise be traveled if the dielectric isolation structure was not formed at the shallower depth. | 05-16-2013 |
20130200428 | PROGRAMMABLE SCR FOR ESD PROTECTION - A programmable semiconductor controlled rectifier (SCR) circuit is disclosed. The SCR includes a first terminal ( | 08-08-2013 |
20140027815 | Fast Turn On Silicon Controlled Rectifiers for ESD Protection - Fast turn on silicon controlled rectifiers for ESD protection. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of a second conductivity type; a second well of the second conductivity type; a first diffused region of the first conductivity type and coupled to a first terminal; a first diffused region of the second conductivity type; a second diffused region of the first conductivity type; a second diffused region of the second conductivity type in the second well; wherein the first diffused region of the first conductivity type and the first diffused region of the second conductivity type form a first diode, and the second diffused region of the first conductivity type and the second diffused region of the second conductivity type form a second diode, and the first and second diodes are series coupled between the first terminal and the second terminal. | 01-30-2014 |
20140167106 | INTERFACE PROTECTION DEVICE WITH INTEGRATED SUPPLY CLAMP AND METHOD OF FORMING THE SAME - Protection circuit architectures with integrated supply clamps and methods of forming the same are provided herein. In certain implementation, an integrated circuit interface protection device includes a first diode protection structure and a first thyristor protection structure electrically connected in parallel between a signal pin a power high supply. Additionally, the protection device includes a second diode protection structure and a second thyristor protection structure electrically connected in parallel between the signal pin and a power low supply. Furthermore, the protection device includes a third diode protection structure and a third thyristor protection structure electrically connected in parallel between the power high supply and the power low supply. The third thyristor protection structure and the third diode protection structure are synthesized as part of the integrated circuit interface and can share at least a portion of the wells and/or diffusion regions associated with the first and second thyristor protection structures. | 06-19-2014 |
20140264435 | SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor module includes: a first circuit component: a second circuit component; and a third circuit component. The first circuit component includes: an insulating first substrate; a first conductive layer; a first switching element; and a first diode. The second circuit component includes: an insulating second substrate; a second conductive layer; a second switching element; and a second diode. The second circuit component is disposed between the first circuit component and the third circuit component. The third circuit component includes: an insulating third substrate; a third conductive layer provided on the third substrate and including a third element mounting unit; a third switching element provided on the third element mounting unit; and a third diode provided on the third element mounting unit. A direction from the third switching element toward the third diode is an opposite direction to the first direction. | 09-18-2014 |
20140367739 | SEMICONDUCTOR DEVICE AND AN ELECTRONIC DEVICE - A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view. | 12-18-2014 |
20150021659 | PROGRAMMABLE SCR FOR ESD PROTECTION - A programmable semiconductor controlled rectifier (SCR) circuit is disclosed. The SCR includes a first terminal ( | 01-22-2015 |
20150076556 | INTEGRATED CIRCUIT DEVICE AND A METHOD FOR PROVIDING ESD PROTECTION - An integrated circuit (IC) device including an electrostatic discharge (ESD) protection network for a high voltage application. The ESD protection network includes a common diode structure coupled between an external contact of the IC device and a substrate of the IC device, such that the common diode structure is forward biased towards the external contact, a Darlington transistor structure coupled between the external contact and the substrate of the IC device, and the Darlington transistor structure includes: an emitter node coupled to the external contact; a collector node coupled to the substrate; and a base node coupled between the emitter node of the Darlington transistor structure and the common diode structure. The at least one ESD protection network further comprises an isolation diode structure coupled between the emitter node and the base node of the Darlington transistor structure such that the isolation diode structure is forward biased towards the base node. | 03-19-2015 |
20160079227 | ESD PROTECTION CIRCUIT WITH PLURAL AVALANCHE DIODES - An electrostatic discharge (ESD) protection circuit ( | 03-17-2016 |
20160079750 | ESD PROTECTION CIRCUIT WITH PLURAL AVALANCHE DIODES - An electrostatic discharge (ESD) protection circuit (FIG. | 03-17-2016 |
20160104700 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - The present disclosure relates to an electrostatic discharge (ESD) protection device. The electrostatic discharge protection device, may comprise: a semiconductor controlled rectifier; and a p-n diode. The semiconductor controlled rectifier and the diode may be integrally disposed laterally at a major surface of a semiconductor substrate; and a current path for the semiconductor controlled rectifier may be separate from a current path for the diode. | 04-14-2016 |