| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257085000 | With heterojunction | 7 |
| 20090101919 | Photo-Detector Array, Semiconductor Image Intensifier And Methods Of Making And Using The Same - A sensor including an array of light sensitive pixels, each pixel including: at least one hetero-junction phototransistor having a floating base without contact, wherein each phototransistor is a mesa device having active layers exposed at side-walls of the mesa device; and at least one atomic layer deposited high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers. | 04-23-2009 |
| 20110057206 | Fast Photoconductor - A photoconductor having a layer stack ( | 03-10-2011 |
| 20110108858 | STABLE LIGHT SOURCE - Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged. | 05-12-2011 |
| 20120025212 | GeSn Infrared Photodetectors - Photodiode devices with GeSn active layers can be integrated directly on p+ Si platforms under CMOS-compatible conditions. It has been found that even minor amounts of Sn incorporation (2%) dramatically expand the range of IR detection up to at least 1750 nm and substantially increases the absorption. The corresponding photoresponse can cover of all telecommunication bands using entirely group IV materials. | 02-02-2012 |
| 20120097984 | OPTICAL SEMICONDUCTOR DEVICE, LASER CHIP AND LASER MODULE - An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region. | 04-26-2012 |
| 20140252379 | PHOTOCONDUCTIVE ANTENNAS, METHOD FOR PRODUCING PHOTOCONDUCTIVE ANTENNAS, AND TERAHERTZ TIME DOMAIN SPECTROSCOPY SYSTEM - A photoconductive antenna that generates and detects a terahertz wave has a substrate, a buffer layer, a first semiconductor layer, a second semiconductor layer, and an electrode in this order. The substrate is made of Si, the buffer layer contains Ge, and the first and second semiconductor layers both contain Ga and As. The element ratio Ga/As of the second semiconductor layer is smaller than the element ratio Ga/As of the first semiconductor layer. | 09-11-2014 |
| 20140374778 | Optical Assembly - An optical assembly configured to emit electromagnetic radiation comprises first and second electroluminescent semiconductor components positioned adjacent to each other. The first electroluminescent semiconductor component is transparent to electromagnetic radiation generated by the second electroluminescent semiconductor component, and the second electroluminescent semiconductor component is transparent to electromagnetic radiation generated by the first electroluminescent semiconductor component. The first electroluminescent semiconductor component and the second electroluminescent semiconductor component are configured to actuate independently of each other. | 12-25-2014 |
