Entries |
Document | Title | Date |
20090032824 | Image displaying device - An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other. | 02-05-2009 |
20090050906 | Photo Detector and a Display Panel having the Same - A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed. | 02-26-2009 |
20090114927 | Multi-chips with an optical interconnection unit - A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device | 05-07-2009 |
20090121236 | Optocoupler using silicon based LEDs - This invention details how a low cost opto coupler can be made on Silicon On Insulator (SOI) using conventional integrated circuit processing methods. Specifically, metal and deposited insulating materials are use to realize a top reflector for directing light generated by a silicon PN junction diode to a silicon PN junction photo diode detector. The light generator or LED can be operated either in the avalanche mode or in the forward mode. Also, side reflectors are described as a means to contain the light to the LED-photo detector pair. Furthermore, a serpentine junction PN silicon LED is described for the avalanche mode of the silicon LED. For the forward mode, two LED structures are described in which hole and electrons combine in lightly doped regions away from heavily doped regions thereby increasing the LED conversion efficiency. | 05-14-2009 |
20090159901 | DISPLAY - A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other. | 06-25-2009 |
20090166644 | MONOLITHIC LIGHT EMITTING DEVICE AND DRIVING METHOD THEREFOR - A monolithic light-emitting device and driving method therefore includes a plurality of light-emitting diodes, array-arranged monolithically on a single substrate. Thie light-emitting diodes include a pn junction-containing semiconductor material and a phosphor-containing layer passing light emitted from the semiconductor material, absorbing part, or whole of the light for conversion into light having a different wavelength. The array is constituted of a light-emitting diode group consisting of m (m≧2) pieces of the light-emitting diode, the light emitting diode group being constituted of N types (N≧2, providing N≦m) of light-emitting diodes, each having either one of preset N types of light-emitting spectrum patterns. An average light-emitting spectrum from the whole array can be changed by regulating a power supplied to the light-emitting diodes for each light-emitting diode group sorted according to the type of the light-emitting spectrum pattern. | 07-02-2009 |
20090236614 | TUNABLE PHOTONIC CRYSTAL - An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects. | 09-24-2009 |
20090250708 | THIN-FILM PHOTODIODE AND DISPLAY DEVICE - A thin-film photodiode has a substrate, a thin-film element formed on the substrate and a micro lens formed above the thin-film element. The thin-film element includes a first semiconductor layer of p-type semiconductor formed on the substrate, a second semiconductor layer formed in contact with the first semiconductor layer on the substrate and formed of i-type semiconductor or p-type semiconductor having lower impurity concentration than the first semiconductor layer and a third semiconductor layer formed of an n-type semiconductor layer formed in contact with the second semiconductor layer on the substrate. The position of an optical axis center of the lens is set between a boundary between the second and third semiconductor layers and a lateral center of the second semiconductor layer. | 10-08-2009 |
20090289266 | REFLECTION TYPE OPTICAL SENSOR DEVICE - Provided is a reflection type optical sensor device including: a semiconductor light source being formed by providing a light emitting region on a predetermined region of a substrate; and a photo-detection element being integrated on the same substrate as the substrate where the semiconductor light source is formed to surround an outer circumferential surface of the semiconductor light source, and including a light receiving region. When the light emitted from the semiconductor light source is reflected by an external object, the photo-detection element may detect the light to sense the object. Through this, it is possible to reduce cost and ensure a small size. Also, the photo-detection element is constructed to surround the outer circumferential surface of the semiconductor light source, and thus more accurately detect the light. | 11-26-2009 |
20090302330 | PHOTO DETECTOR AND METHOD FOR FORMING THEREOF - A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes. | 12-10-2009 |
20090321751 | LIGHT EMITTING APPARATUS AND ELECTRONIC DEVICE - A light emitting apparatus includes a light emitting element formed on a surface of a substrate and a light receiving element formed on an area other than an area overlapping the light emitting element on the surface of the substrate, the light receiving element detecting light emitted from the light emitting element. | 12-31-2009 |
20100038654 | PHOTO SENSOR AND PORTABLE ELECTRONIC APPARATUS - A photo sensor including a gate, a first insulator, a semiconductor layer, a first electrode pattern layer, a second electrode pattern layer, a second insulator and a transparent electrode is provided. The gate is disposed on the substrate. The first insulator covers the gate and a portion of the substrate. The semiconductor layer is disposed on the first insulator above the gate. Moreover, there is a space between the first electrode pattern layer and the second electrode pattern layer located on the semiconductor layer. The second insulator covers a portion of the semiconductor layer, the first electrode pattern layer and the second electrode pattern layer. The transparent electrode is disposed on the second insulator above the semiconductor layer and corresponds to the first electrode pattern layer. The transparent electrode is electrically connected to the first electrode pattern layer, and a portion of the transparent electrode is within the space. | 02-18-2010 |
20100044724 | DEVICE FOR DEFEATING REVERSE ENGINEERING OF INTEGRATED CIRCUITS BY OPTICAL MEANS - An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by reduction of the intensity of light emitted from the at least one active device in the integrated circuit thereby preventing the reduced intensity light emitted from the at least one active device in the integrated circuit from being detected external to the integrated circuit. The intensity of light emitted from the at least one active device in the integrated circuit can be reduced by modification of operational characteristics of the at least one active device during switching transitions. | 02-25-2010 |
20100044725 | DEVICE FOR DEFEATING REVERSE ENGINEERING OF INTEGRATED CIRCUITS BY OPTICAL MEANS - An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by fading the light emitted from the at least one active device in the integrated circuit and that is emitted external to the integrated circuit. Bright light emission emitted in substantial close proximity to the at least one active device in the integrated circuit, and emitted external to the integrated circuit, fades a pattern of light emission emitted from the at least one active device. | 02-25-2010 |
20100072486 | WAVELENGTH CONVERTING ELEMENTS WITH REFLECTIVE EDGES - A light emitting device ( | 03-25-2010 |
20100109022 | Light emitting device and fabricating method thereof - In a light emitting device and a fabricating method thereof are provide, wherein the light emitting device includes a light converting element, and a light emitting element positioned on the light converting element and including a first electrode, a light emitting structure and a second electrode, the first electrode formed on the light emitting element and having a first opening, the light emitting structure having a first conductive pattern of a first conductivity type, a light emitting pattern, and a second conductive pattern of a second conductivity type, which are sequentially stacked, and the second electrode formed on the second conductive pattern, wherein the light generated from the light emitting structure reaches the light converting element through the first opening. | 05-06-2010 |
20100109023 | TRANSFER METHOD OF FUNCTIONAL REGION, LED ARRAY, LED PRINTER HEAD, AND LED PRINTER - A method includes placing a first bonding layer on at least one of a first functional region bonded on a release layer with a light releasable adhesive layer on a first substrate, and a transfer region on a second substrate; bonding the first functional region to the second substrate by the first bonding layer; irradiating the release layer with light with a light blocking member being provided to separate the first substrate from the first functional region at the release layer; placing a second bonding layer on at least one of a second functional region on the first substrate, and a transfer region on the release layer or a transfer region on a third substrate; bonding the second functional region to the second substrate or the third substrate by the second bonding layer; and separating the first substrate from the second functional region at the release layer. | 05-06-2010 |
20100109024 | TRANSFER METHOD OF FUNCTIONAL REGION, LED ARRAY, LED PRINTER HEAD, AND LED PRINTER - A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer. | 05-06-2010 |
20100133551 | HIGH-SPEED OPTICAL INTERCONNECTION DEVICE - Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors. | 06-03-2010 |
20100163889 | OPTICAL MODULATOR WITH PIXELIZATION PATTERNS - Provided is an optical modulator having pixelization patterns. The optical modulator includes an optical-electric (O-E) conversion element converting input optical images to current signals using the photoelectric effect, and an electric-optical (E-O) conversion element that emits light using the current signals transferred from the O-E conversion element. Trenches are formed from at least a surface of the optical modulator to a predetermined depth in the optical modulator so as to block or reduce electrical interference between pixels when the electric signals are transferred from the O-E conversion element to the E-O conversion element. | 07-01-2010 |
20100171128 | PHOTODETECTOR AND DISPLAY DEVICE PROVIDED WITH THE SAME - Provided are a photodetector capable of suppressing variations in the output characteristics among photodiodes, and a display device provided with the photodetector. A display device in use has an active matrix substrate ( | 07-08-2010 |
20100193804 | PHOTODETECTOR AND DISPLAY DEVICE PROVIDED WITH THE SAME - Provided are a photodetector capable of suppressing variations in the output characteristics among photodiodes, and a display device provided with the photodetector. A display device in use has an active matrix substrate ( | 08-05-2010 |
20100193805 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; and an insulating oxidized layer disposed between the semiconductor light-emitting element and the semiconductor light-detecting element. | 08-05-2010 |
20100213472 | Photo-gating Switch System - A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate. | 08-26-2010 |
20100213473 | PHOTON-BASED MEMORY DEVICE - An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel. | 08-26-2010 |
20100224888 | MONOLITHIC CELL ARRAY DISPLAY - There is described a display comprising: a monolithic array of cells; and optical direct outputs located within the monolithic array of cells and adapted for collectively forming a human-readable display upon using a first portion of available light, wherein a second portion of the available light is used concurrently to the first portion for a purpose other than the forming the human-readable display. | 09-09-2010 |
20100237358 | LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE - A light-emitting device includes: a substrate sectioned into a first region and a second region; a first clad layer provided over the substrate in the first region; an active layer provided over the first clad layer and having an emission surface on at least one side surface; a second clad layer provided over the active layer; and a light dividing section arranged over the substrate in the second region and on an optical path of light emitted from the emission surface, wherein the light emitted from the emission surface is divided by the light dividing section into reflected light reflected on the light dividing section and transmitted light transmitted through the light dividing section. | 09-23-2010 |
20100264428 | SILICON BIOSENSOR AND METHOD OF MANUFACTURING THE SAME - A silicon biosensor and a method of manufacturing the same are provided. The silicon biosensor includes: a light emitting layer emitting light according to injected electrons and holes and changing a wavelength of the light depending on whether a biomaterial is absorbed by the light emitting layer; an electron injection layer injecting the electrons into the light emitting layer; and a hole injection layer injecting the holes into the light emitting layer. Accordingly, it is possible to produce low price biosensors in large quantities. | 10-21-2010 |
20100283063 | LIGHT RECEIVING AND EMITTING DEVICE - A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and a reflected light, and the reflected light is received by the light receiving unit. | 11-11-2010 |
20100289034 | Method for forming lens, method for manufacturing semiconductor apparatus, and electronic information device - A lens forming method according to the present invention for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting of a semiconductor apparatus is described. The method includes a lens forming step of processing a lens forming material, in which an average gradient of a γ curve indicating a residual film thickness with respect to the amount of irradiation light is between −15 and −0.8 nm·cm | 11-18-2010 |
20100289035 | OPTOELECTRONIC DEVICE AND IMAGE RECORDING DEVICE - An optoelectronic device includes an optical element and an optoelectronic semiconductor chip that generates electromagnetic radiation, wherein the optical element is of one-piece construction, includes two mutually facing radiation passage faces, comprises a lens arrangement with a plurality of mutually delimited lens regions, wherein the lens arrangement is formed in one of the radiation passage faces and the other radiation passage face is of smooth construction, and wherein the lens regions are arranged such that the radiation passing through the optical element is formed into different, cylindrical and/or mutually separate wavefronts. | 11-18-2010 |
20100295064 | ORGANIC LIGHT EMITTING DIODE DEVICE - The invention relates to an organic light emitting diode device ( | 11-25-2010 |
20100295065 | LIGHT EMITTING AND RECEIVING DEVICE - A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer. | 11-25-2010 |
20100301352 | INTERFEROMETRIC FIBER OPTIC GYROSCOPE WITH SILICON OPTICAL BENCH FRONT-END - Method and apparatus are provided for a silicon substrate optical system for use in an interferometric fiber optic gyroscope (IFOG). A silicon substrate of the silicon substrate optical system is etched to receive optical components, including an input optical fiber, a pump source, a wavelength division multiplier, an isolator, a polarizing isolator, a beam splitting device, a PM tap coupler, a relative intensity noise (RIN) photodiode, a system photodiode, and an output optical fiber. The optical components are mounted on a silicon substrate to reduce the size and cost of the IFOG and increase reliability. | 12-02-2010 |
20100314631 | DISPLAY-PIXEL AND PHOTOSENSOR-ELEMENT DEVICE AND METHOD THEREFOR - A display-pixel and photosensor-element device for use as a display and a camera, the device comprising a plurality of light-emitting diode (LED) display elements and a plurality of light-sensitive photosensor devices, together fabricated onto an essentially planar surface so as to create a device that can be used as a display and a camera. In an implementation, a plurality of micro-optic structures can be associated with the plurality of light-sensitive devices. In various exemplary implementations, the LEDs may comprise organic light emitting diodes (OLEDs) or stacked organic light emitting diode (SOLED). In an implementation, the light-emitting diode and the light-sensitive device are integrated into a single element. In an implementation, the device is configured to serve as either or both of a color light sensor array and a display comprising color LEDs. | 12-16-2010 |
20100314632 | INTEGRATED CIRCUIT PACKAGE - A portion of a package in which a silicon chip ( | 12-16-2010 |
20110006311 | PHOTOSENSITIVE STRUCTURE AND APPARATUS INCLUDING SUCH A STRUCTURE - A photosensitive structure comprises a plurality of photosenstivie regions ( | 01-13-2011 |
20110024771 | Optically Interrogated Solid State Biosensors Incorporating Porous Materials - Devices and Methods of Fabrication - Quantitative understanding of neural and biological activity at a sub-millimeter scale requires an integrated probe platform that combines biomarker sensors together with electrical stimulus/recording sites. Optically addressed biomarker sensors within such an integrated probe platform allows remote interrogation from the activity being measured. Monolithic or hybrid integrated silicon probe platforms would beneficially allow for accurate control of neural prosthetics, brain machine interfaces, etc as well as helping with complex brain diseases and disorders. According to the invention a silicon probe platform is provided employing ultra-thin silicon in conjunction with optical waveguides, optoelectronic interfaces, porous filter elements, and integrated CMOS circuitry. Such probes allowing simultaneously analysis of both neural electrical activities along with chemical activity derived from multiple biomolecular sensors with porous membrane filters. Such porous silicon and polymer filters providing biomolecular filtering and optical filtering being compatible with post-processing wafers with integrated CMOS electronics. | 02-03-2011 |
20110037077 | LIGHT DETECTING CHIP AND LIGHT DETECTING DEVICE PROVIDED WITH LIGHT DETECTING CHIP - A light detecting chip includes at least one detection region configured to accommodate a sample that is capable of emitting fluorescent light, and a light reflecting section configured to reflect at least a portion of the fluorescent light emitted from the sample in a direction toward a light detector. | 02-17-2011 |
20110037078 | OPTICAL INTERCONNECTION DEVICE - Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector. | 02-17-2011 |
20110057204 | Optical module - An optical module can reliably provide monitor light and can facilitate manufacturing by reducing the number of lens surfaces. Based on a surface shape of each first lens surface ( | 03-10-2011 |
20110057205 | LED WITH PHOSPHOR TILE AND OVERMOLDED PHOSPHOR IN LENS - Overmolded lenses and certain fabrication techniques are described for LED structures. In one embodiment, thin YAG phosphor plates are formed and affixed over blue LEDs mounted on a submount wafer. A clear lens is then molded over each LED structure during a single molding process. The LEDs are then separated from the wafer. The molded lens may include red phosphor to generate a warmer white light. In another embodiment, the phosphor plates are first temporarily mounted on a backplate, and a lens containing a red phosphor is molded over the phosphor plates. The plates with overmolded lenses are removed from the backplate and affixed to the top of an energizing LED. A clear lens is then molded over each LED structure. The shape of the molded phosphor-loaded lenses may be designed to improve the color vs. angle uniformity. Multiple dies may be encapsulated by a single lens. In another embodiment, a prefabricated collimating lens is glued to the flat top of an overmolded lens. | 03-10-2011 |
20110073875 | OPTICAL SIGNAL TRANSFER IN A SEMICONDUCTOR DEVICE BY USING MONOLITHIC OPTO-ELECTRONIC COMPONENTS - In a semiconductor device, optical signal transfer capabilities are implemented on the basis of silicon-based monolithic opto-electronic components in combination with an appropriate waveguide. Thus, in complex circuitries, such as microprocessors and the like, superior performance may be obtained in terms of signal propagation delay, while at the same time thermal requirements may be less critical. | 03-31-2011 |
20110089439 | INTEGRATED CMOS POROUS SENSOR - A single chip wireless sensor comprises a microcontroller connected by a transmit/receive interface to a wireless antenna. The microcontroller is also connected to an 8 kB RAM, a USB interface, an RS232 interface, 64 kB flash memory, and a 32 kHz crystal. The device senses humidity and temperature, and a humidity sensor is connected by an 18 bit ΣΔ A-to-D converter to the microcontroller and a temperature sensor is connected by a 12 bit SAR A-to-D converter to the microcontroller. The device is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. | 04-21-2011 |
20110101382 | LIGHT CONVERTING CONSTRUCTION - Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction. | 05-05-2011 |
20110121322 | Radiation-Emitting Thin-Film Semiconductor Chip and Method of Producing a Radiation-Emitting Thin Film Semiconductor Chip - A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material. | 05-26-2011 |
20110127547 | CAVITY-ENHANCED MULTISPECTRAL PHOTONIC DEVICES - A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified wavelengths, wherein each stacked cavity arrangement having a photoactive layer for spectral emission or detection of one of the specified wavelengths. The photoactive layer is positioned within a resonant cavity stack and the resonant cavity stack being positioned between two adjacent mirror stacks. A plurality of coupling-matching layers are positioned between one or more of the stack mirror arrangements for controlling optical phase and coupling strength between emitted or incident light and resonant modes in each of the stacked cavity arrangements. | 06-02-2011 |
20110140131 | PHOTO-DETECTOR WITH WAVELENGTH CONVERTER - The invention relates to a photo-detector comprising a light sensitive element ( | 06-16-2011 |
20110180815 | OPTICAL DEVICE, OPTICAL TRANSMISSION DEVICE, AND METHOD OF MANUFACTURING OPTICAL DEVICE - An optical transmission board includes a base having light transmissibility, and an amorphized part provided in a lens-like shape in the base, the lens-like shape part having a different refractive index from the rest of the base. | 07-28-2011 |
20110233565 | HYBRID COMBINATION OF SUBSTRATE AND CARRIER MOUNTED LIGHT EMITTING DEVICES - A multi-chip light emitting device (LED) uses a low-cost carrier structure that facilitates the use of substrates that are optimized to support the devices that require a substrate. Depending upon the type of LED elements used, some of the LED elements may be mounted on the carrier structure, rather than on the more expensive ceramic substrate. In like manner, other devices, such as sensors and control elements, may be mounted on the carrier structure as well. Because the carrier and substrate structures are formed independent of the encapsulation and other after-formation processes, these structures can be tested prior to encapsulation, thereby avoiding the cost of these processes being applied to inoperative structures. | 09-29-2011 |
20110233566 | LIGHTING DEVICE - Provided is a lightweight flexible lighting device with excellent durability and stable performance over repeated use that combines an organic electroluminescent element, an organic photoelectric conversion element, and a secondary cell. The lighting device has a control means for controlling the electrical connections of the organic electroluminescent element, the organic photoelectric conversion element, and the secondary cell. The control means controls the electrical connections such that a reverse bias voltage is applied to the organic electroluminescent element when the organic electroluminescent element receives light, generates power, and charges the secondary cell, and such that a reverse bias voltage is applied to the organic photoelectric conversion element when the organic electroluminescent element is supplied with power from the secondary cell and emits light. | 09-29-2011 |
20110266559 | Semiconductor Component, Reflected-Light Barrier and Method for Producing a Housing Therefor - The application relates to a semiconductor component, a photo-reflective sensor, and also a method for producing a housing for a photo-reflective sensor, wherein the housing lower part is monolithic and has at least two cavities into which an emitter and a detector are introduced. | 11-03-2011 |
20110297968 | Rod-shaped semiconductor device - A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer. | 12-08-2011 |
20110316005 | DISPLAY APPARATUS - In a liquid crystal display apparatus ( | 12-29-2011 |
20120001201 | RADIATION IMAGE DETECTION APPARATUS AND MANUFACTURING METHOD OF RADIATION IMAGE DETECTOR - In a radiation image detection apparatus having a radiation image detector that includes the following stacked in the order listed below: a bias electrode, a photoconductive layer, a substrate side charge transport layer, and an active matrix substrate, the radiation image detector does not include an area adjacent to the interface between the substrate side charge transport layer and photoconductive layer having an oxygen or chlorine element density not less than two times the average density of oxygen or chlorine element in the substrate side charge transport layer. | 01-05-2012 |
20120007105 | Fully silicon aled-photodiode optical data link module - In a silicon-based light emitting diode-photodiode (LED-PD) arrangement, the LED is implemented as an avalanche LED (ALED) and the ALED and PD are integrated into a common integrated circuit. The ALED is formed around a cross-shaped PD and is separated from the PD by a deep trench region. In order to create current crowding close to the deep trench the ALED includes an NBL or PBL having a narrowing at its end | 01-12-2012 |
20120032192 | LIGHT EMITTING DIODE - A light emitting diode includes a first illumination region, a second illumination region, and the third illumination, wherein a first fluorescent conversion layer and a second fluorescent conversion layer cover the first illumination region and the second illumination region, respectively. The fluorescent conversion layers can convert lights from the illumination regions to other lights with different wavelengths whereby the light emitting diode generates light with multiple wavelengths. | 02-09-2012 |
20120032193 | SOLID-STATE IMAGE SENSING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE - To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact. Included are a plurality of first photosensors on which light with a first incident angle is incident from a first incident direction and a plurality of second photosensors on which light with a second incident angle is incident from a second incident direction. The first incident angle of light incident on one of the plurality of first photosensors is larger than that of light incident on one of the other first photosensors. The second incident angle of light incident on one of the plurality of second photosensors is larger than that of light incident on one of the other second photosensors. | 02-09-2012 |
20120056205 | ORIGAMI SENSOR - In one aspect, the invention provides an optical sensor comprising a flexible substrate and an optical element being positioned on the substrate. The flexible substrate comprises deformations affecting the optical element and the deformations are provided in a substrate deformation zone at least partly surrounding the optical element. | 03-08-2012 |
20120061689 | LIGHT-EMITTING DEVICE AND METHOD MANUFACTURING THE SAME - A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device. | 03-15-2012 |
20120086020 | Integrated photodetecting device - This invention relates to an integrated photodetecting device. The integrated photodetecting device includes a substrate, a light source layer and a photodetector layer. The photodetector layer and light source layer are epitaxied in a stacked structure. The whole device in this invention is fabricated by epitaxy method during a single process. Therefore, the production cost can be reduced by the omission of alignment process. Besides, the integrated photodetecting device of the invention integrates the light source and photodetector into one chip, hence has the ability of minimization, resulting in the reduction of consumption of samples and test time. The distance between the photodetector layer and targets to be tested can also be largely reduced, making the accuracy and sensitivity largely improved, and the kinds of detectable targets largely increased. Furthermore, the integrated photodetecting device of the invention is a portable device so as to increase the possibility of preventive medicine. | 04-12-2012 |
20120086021 | MULTI-LAYER VARIABLE MICRO STRUCTURE FOR SENSING SUBSTANCE - An optical sensor includes a substrate having an upper surface, a plurality of protrusions on the substrate, wherein each of the plurality of protrusions is defined by a base at the upper surface of the substrate and by one or more sloped surfaces oriented at oblique angles relative to the upper surface, and two or more structural layers in the sloped surfaces. The surfaces of the two or more structural layers can adsorb molecules of a chemical or biological substance. | 04-12-2012 |
20120097983 | RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE - Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ | 04-26-2012 |
20120132930 | DEVICE COMPONENTS WITH SURFACE-EMBEDDED ADDITIVES AND RELATED MANUFACTURING METHODS - Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes. | 05-31-2012 |
20120146058 | LIGHT EMITTING DIODE MODULE PROVIDING STABLE COLOR TEMPERATURE - A light emitting diode module providing stable color temperature includes a plurality of light emitting diodes, at least one color sensor and a controller. The plurality of light emitting diodes can emit light with different wavelengths. The light emitting diode module providing stable color temperature includes a reflection region at the path of the light emitting from half peak angle of each light emitting diode. The color sensor detects the light having different wavelengths reflected from the reflection region. The controller adjusts driving currents of the light emitting diodes according to the luminous intensities of the light of the light emitting diodes reflected by the reflection region and detected by the color sensor. | 06-14-2012 |
20120175642 | MICROCHIP-BASED MOEMS AND WAVEGUIDE DEVICE - An electro-optical device | 07-12-2012 |
20120181552 | PHOTODETECTOR ARRAY HAVING ARRAY OF DISCRETE ELECTRON REPULSIVE ELEMENTS - Photodetector arrays, image sensors, and other apparatus are disclosed. In one aspect, an apparatus may include a surface to receive light, a plurality of photosensitive regions disposed within a substrate, and a material coupled between the surface and the plurality of photosensitive regions. The material may receive the light. At least some of the light may free electrons in the material. The apparatus may also include a plurality of discrete electron repulsive elements. The discrete electron repulsive elements may be coupled between the surface and the material. Each of the discrete electron repulsive elements may correspond to a different photosensitive region. Each of the discrete electron repulsive elements may repel electrons in the material toward a corresponding photosensitive region. Other apparatus are also disclosed, as are methods of use, methods of fabrication, and systems incorporating such apparatus. | 07-19-2012 |
20120205672 | SEMICONDUCTOR CHIP MODULE AND SEMICONDUCTOR PACAKGE HAVING THE SAME - A semiconductor chip module includes a first semiconductor chip possessing a first surface and a second surface which faces away from the first surface, and having a first transmission and reception unit which includes at least two light emitting sections and at least two light receiving sections arranged in a form of a matrix on the first surface and configured to transmit and receive optical signals; and a second semiconductor chip disposed over the first surface of the first semiconductor chip, and having a second transmission and reception unit which includes at least two light emitting sections and at least two light receiving sections arranged in a form of a matrix on a surface of the second semiconductor chip facing the first semiconductor chip and configured to transmit and receive optical signals. | 08-16-2012 |
20120241768 | OPTICAL SENSOR CIRCUIT, DISPLAY PANEL, DISPLAY DEVICE, AND METHOD FOR DRIVING AN OPTICAL SENSOR CIRCUIT - An optical sensor circuit ( | 09-27-2012 |
20120241769 | PHOTODIODE AND MANUFACTURING METHOD FOR SAME, SUBSTRATE FOR DISPLAY PANEL, AND DISPLAY DEVICE - A third semiconductor layer | 09-27-2012 |
20120313113 | PHOTOVOLTAIC ORGANIC LIGHT EMITTING DIODES DEVICE AND MANUFACTURING METHOD THEREOF - A photovoltaic organic light emitting diodes (PV-OLED) device and manufacturing method thereof are introduced. The PV-OLED device includes a substrate, a solar cell module, and a plurality of organic light emitting diodes. The solar cell module is disposed on a surface of the substrate. The organic light emitting diodes are disposed on the same surface of the substrate that the solar cell module is disposed on. The organic light emitting diode is electrically isolated from the solar cell module. The solar cell module can apply power to the organic light emitting diodes for emitting light. | 12-13-2012 |
20130049020 | SOLID STATE TRANSDUCERS WITH STATE DETECTION, AND ASSOCIATED SYSTEMS AND METHODS - Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis. In further particular embodiments, the state-sensing component can include an electrostatic discharge protection device, a thermal sensor, or a photosensor. | 02-28-2013 |
20130082286 | Single Photon IR Detectors and Their Integration With Silicon Detectors - Apparatuses and systems for photon detection can include a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures. The second optical sensing structure can be structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure. Apparatuses and systems can include a bandgap grading region. | 04-04-2013 |
20130092959 | LIGHT RECEIVING AND EMITTING DEVICE - A light emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer. | 04-18-2013 |
20130105823 | IMAGING DEVICE | 05-02-2013 |
20130119409 | Semiconductor DC Transformer - A semiconductor DC transformer is provided. The semiconductor DC transformer comprises: a plurality of semiconductor electricity-to-light conversion structures connected in series for converting input electric energy into optical energy; and a plurality of semiconductor light-to-electricity conversion structures connected in series for converting input optical energy into electric energy, in which a number of the semiconductor electricity-to-light conversion structures is different from that of the semiconductor light-to-electricity conversion structures so as to realize a DC transformation, and a working light spectrum of the semiconductor electricity-to-light conversion structures is matched with that of the semiconductor light-to-electricity conversion structures. | 05-16-2013 |
20130153934 | PHOTOVOLTAIC DEVICES WITH OFF-AXIS IMAGE DISPLAY - A concentrated photovoltaic and display apparatus includes a backplane substrate, a plurality of photovoltaic elements distributed over the backplane substrate, a plurality of display elements distributed over the backplane substrate between the photovoltaic elements, and an optical element positioned over the backplane substrate, the photovoltaic elements, and the display elements. The optical element is configured to concentrate incident light propagating in a direction substantially parallel to an optical axis thereof onto the photovoltaic elements. The optical element is further configured to direct light reflected or emitted from the display elements in a direction that is not substantially parallel to the optical axis of the optical element. Related fabrication methods and arrays including the apparatus are also discussed. | 06-20-2013 |
20130193451 | Photo-Coupler - A photo-coupler is provided. The photo-coupler comprises a plurality of photo-coupling modules, a third package, a power lead and a ground lead. Each of the photo-coupling modules includes a light emitting component, a photosensitive component, a first transparent package and a second transparent package. In each of the photo-coupler modules, the photosensitive component is disposed opposite the light emitting component for receiving the light emitted by the light emitting component. In addition, the first transparent package encloses the light emitting component, while the second transparent package encloses the light emitting component and the first transparent package. The third package encloses both of the second transparent packages to block light from the outside. The photosensitive components electrically connect to the common power lead respectively and electrically connect to the common ground lead respectively inside the third package. | 08-01-2013 |
20130214293 | MICRO OPTICAL DEVICE - A micro optical device | 08-22-2013 |
20130328067 | LED MODULE - An LED module includes a silicone substrate, an LED grain mounted on a face of the silicone substrate, a temperature sensor formed under the LED grain, a luminous sensor formed close to the LED grain and an encapsulation gel enclosing the LED grain, wherein the LED grain, the luminous sensor and the temperature sensor are electrically connected to electrodes for connection to foreign devices. | 12-12-2013 |
20130341651 | SENSOR SUBSTRATE AND SENSING DISPLAY PANEL HAVING THE SAME - A sensor substrate includes a base substrate, a black matrix pattern, a sensing electrode pattern, a driving electrode pattern, and at least one bridge line. The black matrix pattern is disposed on the base substrate and divides the base substrate into a light transmission area and a light blocking area. The sensing electrode pattern includes a plurality of first unit patterns arranged in association with a first direction. The driving electrode pattern includes a plurality of second unit patterns arranged in association with a second direction and disposed adjacent to the plurality of first unit patterns. The at least one bridge line is connected between at least two of the plurality of first unit patterns or between at least two of the plurality of second unit patterns. | 12-26-2013 |
20140001493 | INTEGRATED OPTOELECTRONIC DEVICE AND SYSTEM WITH WAVEGUIDE AND MANUFACTURING PROCESS THEREOF | 01-02-2014 |
20140001494 | LIGHT EMITTING DIODE | 01-02-2014 |
20140054615 | CHIP WITH SEMICONDUCTOR ELECTRICITY CONVERSION STRUCTURE - A semiconductor electricity conversion structure is provided. The semiconductor electricity conversion structure includes: a substrate; and at least one semiconductor electricity conversion structure formed on the substrate, the at least one semiconductor electricity conversion structure including: at least one semiconductor electricity-to-light conversion unit for converting an input electric energy into a light energy, and at least one semiconductor light-to-electricity conversion unit for converting the light energy back into an output electric energy, in which a number of the semiconductor electricity-to-light conversion unit is in proportion to a number of the semiconductor light-to-electricity conversion unit to realize an electricity conversion, and an emitting spectrum of the semiconductor electricity-to-light conversion unit and an absorption spectrum of the semiconductor light-to-electricity conversion unit are matched with each other. | 02-27-2014 |
20140061679 | SEMICONDUCTOR ELECTRICITY CONVERTER - A semiconductor electricity converter is provided. The semiconductor electricity converter includes: an AC input module, for converting an input AC electric energy into a light energy, the AC input module including a plurality of semiconductor electricity-to-light conversion structures, each semiconductor electricity-to-light conversion structure including an electricity-to-light conversion layer; and an AC output module, for converting the light energy into an output AC electric energy, the AC output module including a plurality of semiconductor light-to-electricity conversion structures, each semiconductor light-to-electricity conversion structure including a light-to-electricity conversion layer; in which an emitting spectrum of each semiconductor electricity-to-light conversion structure and an absorption spectrum of each semiconductor light-to-electricity conversion structure are matched with each other. | 03-06-2014 |
20140084308 | OVERMOLD WITH SINGLE ATTACHMENT USING OPTICAL FILM - A sensor package is provided having a light sensitive component and a light emitting component attached to a same substrate. Light from the light emitting component is emitted from the package through a first opening and reflected back into the package to the light sensitive component through a second opening in the package. A glass attachment is placed between the light emitting component and the light sensitive component. A portion of the glass is removed and filled with an opaque substance to prevent light travelling between the light emitting component and the light sensitive component in the package. | 03-27-2014 |
20140084309 | OPTICAL DEVICE WITH THROUGH-HOLE CAVITY - A light-emitting device having a through-hole cavity is disclosed. The optical device may contain a plurality of conductors, a light source die, a body and a transparent encapsulant material. The body may have a top surface and a bottom surface. A cavity is formed within the body extending from the bottom surface to the top surface and defining therein a bottom opening and a top opening, respectively. Optionally, the light-emitting device may comprise a lens. During manufacturing process, liquid or semi-liquid form transparent material is injected from the bottom surface into the cavity, encapsulating the light source die and forming a lens. The shape of the lens is defined by a mold aligned to the top opening of the body. In yet another embodiment, optical devices having a cavity or multiple cavities are disclosed. The optical devices may include a proximity sensor, an opto-coupler, an encoder and other similar sensors. | 03-27-2014 |
20140091327 | DISPLAY - A display is provided. The display includes a light emitting element, a filter layer and a photosensor. The filter layer is disposed on a side of the light emitting element. The filter layer includes a black filter. The photosensor is disposed corresponding with the black filter. The photosensor is used for detecting an invisible light from the black filter. | 04-03-2014 |
20140091328 | IMAGING APPARATUS AND MEDICAL EQUIPMENT - A light receiving section is provided with a plurality of light receiving elements. A light source section is arranged in a subject side of the light receiving section, and is provided with a light emitting section that illuminates the subject and a plurality of transmissive sections that transmits incident light to the light receiving section side. The light emitting section is provided with a first translucent layer, which includes a light emitting layer, and a reflection layer and a semi-transmissive reflection layer, which are opposed each other interposing the first translucent layer, so that a resonance structure that resonates irradiation light from the light emitting layer is formed. Each of the transmissive sections is provided with a second translucent layer, and a first semi-transmissive reflection layer and a second semi-transmissive reflection layer, which are opposed each other interposing the second translucent layer, so that a resonance structure that resonates incident light from the subject side is formed. A resonance length between the reflection layer and the semi-transmissive reflection layer in the light emitting section is more than a resonance length between the first semi-transmissive reflection layer and the second semi-transmissive reflection layer in the transmissive section. | 04-03-2014 |
20140159062 | OPTICAL COUPLING DEVICE - A optical coupling device includes a first lead frame; a light emitting device installed on the first lead frame; a light receiving device configured to receive an optical signal outputted from the light emitting device; a translucent silicon-based resin layer which covers the light emitting device; and a conductive wire connecting the first lead frame and the light emitting device. The conductive wire is formed of a material which contains silver. | 06-12-2014 |
20140191254 | HYBRID COMBINATION OF SUBSTRATE AND CARRIER MOUNTED LIGHT EMITTING DEVICES - A multi-chip light emitting device (LED) uses a low-cost carrier structure that facilitates the use of substrates that are optimized to support the devices that require a substrate. Depending upon the type of LED elements used, some of the LED elements may be mounted on the carrier structure, rather than on the more expensive ceramic substrate. In like manner, other devices, such as sensors and control elements, may be mounted on the carrier structure as well. Because the carrier and substrate structures are formed independent of the encapsulation and other after-formation processes, these structures can be tested prior to encapsulation, thereby avoiding the cost of these processes being applied to inoperative structures. | 07-10-2014 |
20140191255 | LED MODULE - In various embodiments, a light emitting diode module may include a carrier plate, at least one light emitting diode, and at least one sensor configured to register light emitted by the light emitting diode. The light emitting diode is attached to a light emitting diode installation side of the carrier plate. The sensor is installed countersunk through a hole of the carrier plate in relation to the light emitting diode installation side thereof. | 07-10-2014 |
20140197425 | WIDE AREA ARRAY TYPE PHOTONIC CRYSTAL PHOTOMIXER FOR GENERATING AND DETECTING BROADBAND TERAHERTZ WAVE - Provided is a broadband photomixer technology that is a core to generate continuous frequency variable and pulsed terahertz waves. It is possible to enhance light absorptance by applying the transmittance characteristic of a 2D light crystal structure and it is possible to increase the generation efficiency of terahertz waves accordingly. Moreover, it is possible to implement a wide area array type terahertz photomixer by applying an interdigit structure and spatially properly arranging a light crystal structure having various cycles. Accordingly, it is possible to solve difficulty in thermal characteristic and light alignment by mitigating the high light density of a light absorption unit and low photoelectric conversion efficiency is drastically improved. In addition, the radiation pattern of terahertz waves may be electrically controlled through the present invention. | 07-17-2014 |
20140209929 | OPTICAL COUPLING SYSTEM AND OPTICAL SENSOR INCLUDING THE SAME - An optical coupling system is provided which includes a first layer structure and a second layer structure. The first layer structure includes a plurality of layers sequentially stacked on a substrate, and is configured to compresses a beam emitted from a light source along a direction substantially perpendicular to a top surface of the substrate. The second layer structure is formed on the substrate, and is configured to compresses the beam, having passed through the first layer structure, along a direction substantially parallel to the top surface of the substrate. | 07-31-2014 |
20140217425 | Radiation-Emitting Semiconductor Component - A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface. | 08-07-2014 |
20140246684 | NANO STRUCTURED LEDS - An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback. | 09-04-2014 |
20140264392 | LIGHT-RECEIVING AND EMITTING DEVICE INCLUDING INTEGRATED LIGHT-RECEIVING AND EMITTING ELEMENT AND SENSOR - The light receiving/emitting device uses an integrated light receiving/emitting element wherein a light receiving element and a light emitting element are provided on one main surface of a substrate. The substrate comprises a first-conductivity-type semiconductor. At least one electrode layer is placed in an area corresponding to at least the light receiving element and the light emitting element on the other main surface of the substrate. The light receiving element comprises: a first second-conductivity-type semiconductor layer formed on the one main surface of the substrate; a first anode electrode formed on the top surface of the first second-conductivity-type semiconductor layer; and a first cathode electrode formed on the top surface of the one main surface of the substrate. The electrode layer, the first anode electrode and the first cathode electrode have the same electric potential. | 09-18-2014 |
20140291703 | Opto-Electronic Module - An optical proximity sensor module includes a substrate, a light emitter mounted on a first surface of the substrate, the light emitter being operable to emit light at a first wavelength, and a light detector mounted on the first surface of the substrate, the light detector being operable to detect light at the first wavelength. The module includes an optics member disposed substantially parallel to the substrate, and a separation member disposed between the substrate and the optics member. The separation member may surround the light emitter and the light detector, and may include a wall portion that extends from the substrate to the optics member and that separates the light emitter and the light detector from one another. The separation member may be composed, for example, of a non-transparent polymer material containing a pigment, such as carbon black. | 10-02-2014 |
20140346532 | OPTICAL INPUT/OUTPUT DEVICE, OPTICAL ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method. | 11-27-2014 |
20150069424 | Semiconductor Component and Method of Triggering Avalanche Breakdown - A semiconductor component includes an auxiliary semiconductor device configured to emit radiation. The semiconductor component further includes a semiconductor device. An electrical coupling and an optical coupling between the auxiliary semiconductor device and the semiconductor device are configured to trigger emission of radiation by the auxiliary semiconductor device and to trigger avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device. The semiconductor device includes a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. | 03-12-2015 |
20150076527 | IMAGING DEVICE - Objects are to provide a small imaging device that can take an image of a thick book without distortion of an image of a gutter and to improve the portability of an imaging device by downsizing the imaging device. The imaging device has imaging planes on both surfaces. All elements included in the imaging device are preferably provided over one substrate. In other words, the imaging device has a first imaging plane and a second imaging plane facing opposite to the first imaging plane. | 03-19-2015 |
20150108507 | IMAGE SENSOR WITH DOPED SEMICONDUCTOR REGION FOR REDUCING IMAGE NOISE - A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons. | 04-23-2015 |
20150108508 | DISPLAY PANEL - A display panel comprising a substrate, a meshed shielding pattern, a plurality of light-emitting devices and a solar cell is provided. The substrate has a first surface and a second surface opposite to the first surface, the substrate comprises a first circuit layer disposed over the first surface and a second circuit layer disposed over the second surface. The meshed shielding pattern is disposed on first surface of the substrate to define a plurality of pixel regions over the substrate. The light-emitting devices are disposed on the first surface of the substrate and electrically connected to the first circuit layer, and at least one of the light-emitting devices is disposed in one of the pixel regions. The solar cell is disposed on the second surface of the substrate and electrically connected to the second circuit layer. | 04-23-2015 |
20150129898 | IN-SITU ANNEALING FOR EXTENDING THE LIFETIME OF CMOS PRODUCTS - Methods for packaging a functional chip, methods for annealing a functional chip, and chip assemblies. A functional chip and an annealing chip are located inside a package. The functional chip includes an integrated circuit. The annealing chip includes an annealing element source comprised of an annealing element or a light source configured to emit electromagnetic radiation. The integrated circuit of the functional chip receives the annealing element, electromagnetic radiation, or both from the annealing chip in order to perform an annealing procedure that extends the useful lifetime of the packaged integrated circuit. | 05-14-2015 |
20150295007 | IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE - An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device. | 10-15-2015 |
20150310249 | IMAGING APPARATUS AND MEDICAL EQUIPMENT - A light receiving section includes light receiving elements. A light source section includes a light emitting section that illuminates the subject and transmissive sections. The light emitting section is provided with a first translucent layer, which includes a light emitting layer, and a reflection layer and a semi-transmissive reflection layer interposing the first translucent layer, so that a resonance structure is formed. Each of the transmissive sections includes a second translucent layer, and a first semi-transmissive reflection layer and a second semi-transmissive reflection layer, which are opposed each other interposing the second translucent layer, so that a resonance structure that resonates incident light from the subject side is formed. A resonance length between the reflection layer and the semi-transmissive reflection layer in the light emitting section is more than a resonance length between the first semi-transmissive reflection layer and the second semi-transmissive reflection layer in the transmissive section. | 10-29-2015 |
20160087116 | DISPLAY DEVICE INTEGRATED WITH SOLAR CELL PANEL AND METHODS FOR PRODUCING THE SAME - The present invention discloses a solar cell panel integrated on a display unit, a display device integrated with the solar cell panel and methods for producing the same. The solar cell panel integrated on a display unit according to the present invention comprises a photoelectric material layer with RGB colors comprising red units, green units and blue units, wherein the red units, green units and blue units are arranged corresponding to pixel arrays in the display unit, and one or two of the red units, green units and blue units are made of the photoelectric active material. The photoelectric active material layer with RGB colors according to the present invention can replace a common color filter. | 03-24-2016 |
20160118528 | SIGNAL DISTRIBUTION IN INTEGRATED CIRCUIT USING OPTICAL THROUGH SILICON VIA - An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is optically coupled to a first side of the optical through silicon via. A light generating source optically coupled to a second side of the optical through silicon via is provided. The photo detector is configured to receive a light, generated by the light generating source, propagating through the optical through silicon via. The light, generated by the light generating source, is controlled by a signal generated by a signal generating source. | 04-28-2016 |
20220140173 | MINIATURIZED OPTICAL SENSOR PACKAGE AND MANUFACTURING METHOD THEREOF - There is provided an optical sensor package including a substrate, a base layer, an optical detection region, a light source and a light blocking wall. The base layer is arranged on the substrate. The light detection region and the light source are arranged on the base layer. The light blocking wall is arranged on the base layer, and located between the light detection region and the light source to block light directly propagating from the light source to the light detection region. | 05-05-2022 |
20220141410 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit. | 05-05-2022 |