| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 250492230 | Variable beam | 7 |
| 20080203324 | METHOD AND SYSTEM FOR IMPROVEMENT OF DOSE CORRECTION FOR PARTICLE BEAM WRITERS - A method and system for dose correction of a particle beam writer is disclosed. The method and system includes reading a file of writing objects that includes dose intensity, calculating a rate of dose intensity change between adjacent writing objects, selecting a writing object that may need accuracy improvement of dose correction based on the rate of dose intensity change, and improving accuracy of the dose correction of the writing object that is selected and its adjacent objects. | 08-28-2008 |
| 20090008579 | ELECTRON BEAM LITHOGRAPHY APPARATUS AND DESIGN METHOD OF PATTERNED BEAM-DEFINING APERTURE - A current density distribution characteristic within a beam pattern on a target object can be improved by using a simple-structured electron optical system and a single patterned beam-defining aperture. With an aperture layout modified to be physically fabricable, a current density distribution within the beam pattern is obtained (S | 01-08-2009 |
| 20090032739 | Method and System for Charged-Particle Beam Lithography - Charged-particle beam lithography method and system. The lithography system has a map creation unit and a lithographic data creation unit. The map creation unit creates a proximity effect correction amount map from pattern data supplied from a pattern data file, pattern layout information, a foggy error correction amount map, loading effect correction amount maps, a process error correction amount map, a transfer error correction amount map, proximity effect correction parameters, and a proximity effect correction map. The lithographic data creation unit creates lithographic data based on the pattern data from the pattern data file, creates shot time data based on the proximity effect correction amount map from the map creation unit, and attaches the created shot time data to the lithographic data. | 02-05-2009 |
| 20090057576 | CHARGED PARTICLE BEAM WRITING METHOD - A writing method includes emitting a first charged particle beam formed to be a first shape by passing through a first shaping aperture and a second shaping aperture, onto a target workpiece; and emitting a second charged particle beam formed to be a second shape by passing through the first shaping aperture and the second shaping aperture, wherein the second charged particle beam is superimposed onto a same position exposed by the first charged particle beam and is formed by using an opposite sides of respective first and second shaping apertures to those used for the first shape. | 03-05-2009 |
| 20090057577 | OPTICS FOR GENERATION OF HIGH CURRENT DENSITY PATTERNED CHARGED PARTICLE BEAMS - A direct-write electron beam lithography system employing a patterned beam-defining aperture to enable the generation of high current-density shaped beams without the need for multiple beam-shaping apertures, lenses and deflectors is disclosed. Beam blanking is accomplished without the need for an intermediate crossover between the electron source and the wafer being patterned by means of a double-deflection blanker, which also facilitates proximity effect correction. A simple type of “moving lens” is utilized to eliminate off-axis aberrations in the shaped beam. A method for designing the patterned beam-defining aperture is also disclosed. | 03-05-2009 |
| 20120211677 | MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM - The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total. | 08-23-2012 |
| 20130306884 | Method and System for Forming Non-Manhattan Patterns Using Variable Shaped Beam Lithography - A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR. | 11-21-2013 |
