| Entries |
| Document | Title | Date |
|---|
| 20080197294 | MANUFACTURING METHOD OF CIRCUIT BOARD - An exposure method includes: (a) providing a substrate coated with a photosensitive material on a stage; and (b) applying a spot light beam emitted from a light source to the photosensitive material while moving the stage in accordance with a previously programmed exposure pattern for wiring formation, thereby performing pattern exposure of the photosensitive material. In the exposure method, the spot light beam is controlled so that the spot light beam is formed into an ellipse whose major axis is in a direction perpendicular to a move direction of the stage. | 08-21-2008 |
| 20080203322 | Resist collapse prevention using immersed hardening - A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid. | 08-28-2008 |
| 20080210887 | Charged Particle System - A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens ( | 09-04-2008 |
| 20080217560 | RFID silicon antenna - The system of producing an RFID antenna using the silicon in an integrated circuit as the resonant antenna material for the purpose of reducing the cost of an RFID system and for the purpose of increasing the range and selectivity of the RFID system. According to this invention the base silicon sheets which make up the primary building material of the silicon chip (integrated circuit) is subjected to a laser ablation process. This creates three dimensional nano structures on the surface of the silicon thereby raising its absorption rate of electro magnetic signals. On the reverse side of the same silicon sheet a directional antenna is etched using standard photographic reduction techniques and standard semi conductor industry manufacturing methods. The two sides of the silicon are connected through doping aluminum or copper impurities into these same base silicon sheets causing conductivity within the sheet of silicon. | 09-11-2008 |
| 20080230721 | UV LIGHT IRRADIATING APPARATUS WITH LIQUID FILTER - A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel. | 09-25-2008 |
| 20080230722 | INTEGRATED CIRCUIT AND METHOD INCLUDING A PATTERNING METHOD - A method of making an integrated circuit including a patterning method using chemically amplified photoresists and exposure apparatus is disclosed. One embodiment provides a photoresist layer exposed using a screened particle beam or a projection exposure with a projection wavelength of less than a limit wavelength below which secondary electrons are initiated by the exposure in the photoresist layer. The photoresist layer is irradiated, at least in a section subjected to the exposing, with UV light having a spectrum below a limit frequency corresponding to the limit wavelength. | 09-25-2008 |
| 20080230723 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device - The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic. | 09-25-2008 |
| 20080258081 | REMOVABLE LINERS FOR CHARGED PARTICLE BEAM SYSTEMS - A method of improving the performance of charged beam apparatus. The method including: providing the apparatus, the apparatus comprising: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; and a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and positioning one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber. | 10-23-2008 |
| 20080315124 | SPACE TOLERANCE WITH STITCHING - A method for manufacturing a stitched space in a semiconductor circuit implements a photolithographic process for printing one or more image fields on a wafer surface, each image field corresponding to a portion of a circuit or device and including a space that is to be stitched in adjacent image fields. The space to be stitched that is produced from an image field is overlapped onto the space to be stitched produced from the adjacent image field, however, the overlapped space from the adjacent image fields is intentionally misaligned. The stitched space is then subject to the double light exposure dose to print the stitched space, with the result that an overlay tolerance of the stitched space is improved. | 12-25-2008 |
| 20080315125 | METHOD AND SYSTEM FOR MEASURING CONTAMINATION OF A LITHOGRAPHICAL ELEMENT - A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber. | 12-25-2008 |
| 20080315126 | Laser light source apparatus, exposure method, and exposure apparatus - Information on the side of the body of an exposure apparatus is effectively used on the side of the laser light source apparatus. There is provided a laser light source apparatus which supplies a laser beam to a body of an exposure apparatus which exposes a wafer, and includes a controller adjusting an operation condition of the laser light source apparatus based on exposure information about the exposure operation supplied from the body of the exposure apparatus. The exposure information is exemplified by information on the waiting time until the light emission start or light emission continuation time and the operation condition is exemplified by the gas pressure in an emission chamber in which a laser beam is emitted, the temperature in the emission chamber and a number of revolutions of a blower in the emission chamber. | 12-25-2008 |
| 20090001288 | Lithographic apparatus, radiation system, device manufacturing method, and radiation generating method - A lithographic apparatus includes a radiation system constructed to provide a beam of radiation from radiation emitted by a radiation source. The radiation system includes a contaminant trap configured to trap material emanating from the radiation source. The contaminant trap includes a contaminant engaging surface arranged in the path of the radiation beam that receives the material emanating from the radiation source during propagation of the radiation beam in the radiation system. The radiation system also includes a liquid tin cooling system constructed to cooling the contaminant trap with liquid tin. The apparatus includes an illumination system configured to condition the radiation beam, a support constructed to support a patterning device configured to impart the radiation beam with a pattern in its cross-section, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. | 01-01-2009 |
| 20090014666 | OPTICAL SYSTEM HAVING A CLEARNING ARRANGEMENT - A cleaning arrangement for an optical system and in particular for an optical system designed for EUV radiation. The cleaning arrangement has a gas inlet ( | 01-15-2009 |
| 20090026388 | Illumination Homogenizer - An illumination homogenizer is provided, including a fly eye-type lens array for receiving radiation from a source, the lens array being comprised of a twelve-lenslet subset of a 4×4 array of lenslets. The illumination homogenizer including a lens array comprised of a 4×4 array of lenslets, or a subset thereof, is also used in combination with a negative lens between a radiation source and the lens array. | 01-29-2009 |
| 20090026389 | MULTI-BEAM SOURCE - A multi-beam source for generating a plurality of beamlets of energetic electrically charged particles. The multi-beam source includes an illumination system generating an illuminating beam of charged particles and a beam-forming system being arranged after the illumination system as seen in the direction of the beam, adapted to form a plurality of telecentric or homocentric beamlets out of the illuminating beam. The beam forming system includes a beam-splitter and an electrical zone device, the electrical zone having a composite electrode composed of a plurality of substantially planar partial electrodes, adapted to be applied different electrostatic potentials and thus influencing the beamlets. | 01-29-2009 |
| 20090039292 | Exposure device - The present invention presents an exposure device, which includes an optical source for emitting a UV ray, a first lighting system for shaping the UV ray into a collimated light beam, an aperture member for producing rectangular first and second light beams based on the light beam from first lighting system by using the first and second rectangular windows, first and second spatial light modulators for spatially modulating the first and second light beams, respectively, and first and second projection lighting systems for guiding the modulated first and second light beams to the object. | 02-12-2009 |
| 20090039293 | Apparatus for forming nano pattern and method for forming the nano pattern using the same - The present invention relates to an apparatus for forming a nano pattern capable of fabricating the uniform nano pattern at a low cost including a laser for generating a beam; a beam splitter for splitting the beam from the laser into two beams with the same intensity; variable mirrors for reflecting the two beams split by the beam splitter to a substrate; beam expansion units for expanding diameters of the beams by being positioned on paths of the two beams traveling toward the substrate; and a beam blocking unit, installed on an upper part of the substrate, transmitting only a specific region expanded through the beam expansion unit and blocking regions a remaining region, and a method for forming the nano pattern using the same. | 02-12-2009 |
| 20090050822 | Electron beam apparatus and method of manufacturing semiconductor device using the apparatus - The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system. | 02-26-2009 |
| 20090050823 | APPARATUS AND METHODS FOR SCATTERING-BASED SEMICONDUCTOR INSPECTION AND METROLOGY - Disclosed are apparatus and methods for inspecting or measuring one or more semiconductor targets. An incident beam is directed towards a first target as the first target substantially, continuously moves such that the incident beam remains directed at such first target during a first time period in which the first target substantially, continuously moves between a first position and a second position. An output beam scattered from the first target, in response to the incident beam being directed towards the first target during the first time period in which the first target substantially, continuously moves between the first and second positions, is detected such that information is obtained from the detected output beam during the first time period. The first time period is selected so that the information that is collected from the detected output beam during such first time period can be used to determine a characteristic of the first target. | 02-26-2009 |
| 20090057570 | WRITING DATA CREATION METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - A method of creating writing data for writing a pattern on a target workpiece by using a writing apparatus provided with a plurality of columns that emit charged particle beams includes inputting information on distance between optical centers of the plurality of columns, inputting layout data and virtually dividing a writing region indicated by the layout data into a plurality of small regions, by a width of one integer-th of the distance indicated by the information on distance, converting, for each small region, the layout data to a format adaptable to the writing apparatus to create, for the each small region, the writing data whose writing region is divided into the small regions, and outputting the writing data. | 03-05-2009 |
| 20090072162 | Laser annealing method and semiconductor device fabricating method - When the second harmonic of a YAG laser is irradiated onto semiconductor films, concentric-circle patterns are observed on some of the semiconductor films. This phenomenon is due to the non-uniformity of the properties of the semiconductor films. If such semiconductor films are used to fabricate TFTs, the electrical characteristics of the TFTs will be adversely influenced. A concentric-circle pattern is formed by the interference between a reflected beam | 03-19-2009 |
| 20090084985 | Cadmium sulfide quantum dot lasing in room temperature liquid solution - Disclosed is a lasing complex comprising a room temperature solution containing cadmium sulfide (CdS) quantum dots. Optical gain has been observed in CdS nanocrystal quantum dots in strong confinement regime in toluene solution at room temperature using femtosecond transient absorption techniques. The optical gain lifetime is measured to be 20 picoseconds under pump fluence of 0.77 mJ/cm | 04-02-2009 |
| 20090084986 | Multiple band pass filtering for pyrometry in laser based annealing systems - A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element. | 04-02-2009 |
| 20090101848 | LOCAL PRESSURE SENSING IN A PLASMA PROCESSING SYSTEM - A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece. | 04-23-2009 |
| 20090114850 | APPARATUS AND METHOD FOR MODIFYING AN OBJECT - A method and apparatus includes positioning a reactant on a surface in specific location and then directing an energy source from a device at the reactant such that it modifies the surface to either remove material or add material. | 05-07-2009 |
| 20090121156 | Apparatus and Method for Surface Preparation Using Energetic and Reactive Cluster Beams - A method and apparatus for cleaning contaminated surfaces, especially semiconductor wafers, using energetic cluster beams is disclosed. In this system, charged beams consisting of microdroplets or clusters having a prescribed composition, velocity, energy and size are directed onto a target substrate dislodging contaminant material. The charged, high energy cluster beams are formed by electrostatically atomizing a conductive fluid fed pneumatically to the tip of one or more capillary-like-emitters. | 05-14-2009 |
| 20090121157 | PULSE TRAIN ANNEALING METHOD AND APPARATUS - The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate. | 05-14-2009 |
| 20090121158 | APPARATUS AND METHOD FOR SPECIMEN FABRICATION - A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed. | 05-14-2009 |
| 20090140173 | METHOD AND APPARATUS FOR PROCESSING THIN METAL LAYERS - A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. Each at least partially unmelted region adjoins adjacent melted regions. After irradiation by the first excimer laser pulse, the melted regions of the metal layer are permitted to resolidify. During resolidification, the at least partially unmelted regions seed growth of grains in adjoining melted regions to produce larger grains. After completion of resolidification of the melted regions following irradiation by the first excimer laser pulse, the metal layer is irradiated by a second excimer laser pulse having a shifted intensity pattern so that the shadow regions overlap regions of the metal layer having fewer and larger grains. Each region of the metal layer overlapped by one of the shifted beamlets is melted throughout its entire thickness, while each region of the metal layer overlapped by one of the shifted shadow regions remains at least partially unmelted. During resolidification of the melted regions after irradiation by the second radiation beam pulse, the larger grains in the at least partially unmelted regions seed growth of even larger grains in adjoining melted regions. The irradiation, resolidification and re-irradiation of the metal layer may be repeated, as needed, until a desired grain structure is obtained in the metal layer. | 06-04-2009 |
| 20090146081 | Surface Plasmon Enhanced Radiation Methods and Apparatus - Methods and apparatus in which a plurality of independently controllable surface emitting lasers (SELs) are controlled to generate radiation that irradiates a plurality of surface plasmon enhanced illumination (SPEI) apparatus. The irradiated SPEI apparatus in turn generate surface plasmon enhanced radiation that may be employed for a variety of applications, including maskless (i.e., “direct write”) photolithography techniques in which a photoresist is exposed to individually controllable beams of surface plasmon enhanced radiation. | 06-11-2009 |
| 20090173893 | Semiconductor device and its manufacturing method - It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface. | 07-09-2009 |
| 20090194710 | WRITING APPARATUS, WRITING DATA CONVERSION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM STORING PROGRAM - A writing apparatus includes a storage unit configured to store writing data, an acquiring unit configured to acquire pattern information on a plurality of patterns defined in the writing data, based on the writing data, a first table generating unit configured to generate a first table in which each pattern information corresponds to a number of times of using the each pattern information, based on acquired pattern information, for each predetermined region, a Huffman tree generating unit configured to generate a Huffman tree, based on the first table, a second table generating unit configured to generate a second table in which the each pattern information corresponds to a variable length binary code generated by encoding the each pattern information in such a manner that the larger the number of times of using the each pattern information is, the smaller a value of the variable length binary code is, based on the Huffman tree, a converting unit configured to convert data, which is defined by the writing data, in the predetermined region into a predetermined format using the variable length binary code, based on the second table, and a writing unit configured to write the plurality of patterns defined, onto a target workpiece, based on converted data in the predetermined region. | 08-06-2009 |
| 20090200488 | CHARGED PARTICLE BEAM WRITING APPARATUS, AND APPARATUS AND METHOD FOR CORRECTING DIMENSION ERROR OF PATTERN - A charged particle beam writing apparatus includes a first area density calculation unit configured to calculate a first area density occupied by a pattern of a first dimension in a predetermined region, a first dimension error calculation unit configured to calculate a first dimension error caused by a loading effect, using the first area density, a first dimension calculation unit configured to calculate a second dimension of a pattern obtained by correcting the first dimension error of the first dimension, a second area density calculation unit configured to calculate a second area density occupied by the pattern of the second dimension in the predetermined region, a second dimension error calculation unit configured to calculate a second dimension error caused by the loading effect, using the second area density, a second dimension calculation unit configured to calculate a third dimension by adding the second dimension error to the second dimension, a judgment unit configured to judge whether a difference between the first dimension and the third dimension is within a predetermined range or not, and a writing unit configured to write the pattern of the second dimension in which the difference is within the predetermined range, onto a target workpiece by using a charged particle beam. | 08-13-2009 |
| 20090206279 | Method and Device for Removing Particles Generated by Means of a Radiation Source During Generation of Short-Wave Radiation - A method for removing contaminant particles ( | 08-20-2009 |
| 20090206280 | CHARGED-BEAM EXPOSURE APPARATUS HAVING AN IMPROVED ALIGNMENT PRECISION AND EXPOSURE METHOD - The first charged-beam optical system, which is one of the charged-beam optical systems, detects first marks provided on the chips formed in the wafer. The positions of the chips made in the wafer are calculated from position data about the first marks detected. The charged-beam optical systems detect the second mark provided on a stage. The position of the beam generated by each charged-beam optical system is adjusted in accordance with position data about the second mark detected. The charged-beam optical systems are used in accordance with the positions of the chips, to thereby draw a pattern. | 08-20-2009 |
| 20090230326 | Systems and methods for target material delivery in a laser produced plasma EUV light source - Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission. | 09-17-2009 |
| 20090242805 | SYSTEMS AND METHODS FOR UNIFORM SEQUENTIAL LATERAL SOLIDIFICATION OF THIN FILMS USING HIGH FREQUENCY LASERS - Under one aspect, a method for processing a thin film includes generating a first set of shaped beamlets from a first laser beam pulse, each of the beamlets of the first set of beamlets having a length defining the y-direction, a width defining the x-direction, and a fluence that is sufficient to substantially melt a film throughout its thickness in an irradiated film region and further being spaced in the x-direction from adjacent beamlets of the first set of beamlets by gaps; irradiating a first region of the film with the first set of shaped beamlets to form a first set of molten zones which laterally crystallize upon cooling to form a first set of crystallized regions including crystal grains that are substantially parallel to the x-direction and having a length and width substantially the same as the length and width of each of the shaped beamlets and being separated from adjacent crystallized regions by gaps substantially the same as the gaps separating the shaped beamlets; generating a second set of shaped beamlets from a second laser beam pulse, each beamlet of the second set of beamlets having a length, width, fluence, and spacing that is substantially the same as the length, width, fluence, and spacing of each beamlet of the first set of beamlets; and continuously scanning the film so as to irradiate a second region of the film with the second set of shaped beamlets to form a second set of molten zones that are displaced in the x-direction from the first set of crystallized regions, wherein at least one molten zone of the second set of molten zones partially overlaps at least one crystallized region of the first set of crystallized regions and crystallizes upon cooling to form elongations of crystals in said at least one crystallized region. | 10-01-2009 |
| 20090242806 | Electroactive polymers for lithography - Systems and methods for lithography include actuating an electroactive polymer member to position mask and/or substrate. | 10-01-2009 |
| 20090242807 | CORRECTING SUBSTRATE FOR CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS - A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO | 10-01-2009 |
| 20090302238 | Apparatus and Method for Irradiating Energy Beam - [Problem] To provide an energy beam irradiating apparatus and energy beam irradiating method that are preferable to enhance the processing performance of the equipment, reduce a gas consumption amount and reduce an equipment installation space are provided. | 12-10-2009 |
| 20090314958 | METHODS FOR IMPLANTING B22Hx AND ITS IONIZED LOWER MASS BYPRODUCTS - Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece. | 12-24-2009 |
| 20100006776 | SEMICONDUCTOR THIN FILM FORMING SYSTEM - A thin film processing method for processing the thin film by irradiating the optical beam to the thin film, wherein one set of irradiation includes the first optical pulse irradiation to the thin film and the second optical pulse irradiation to the thin film which substantially starts with a delay to the first optical pulse irradiation, the one set of irradiation being repetitively carried out for processing the thin film, and the relationship between the first and the second pulse satisfies (the pulse width of the first optical pulse)>(the pulse width of the second optical pulse). Preferably, the relationship between the first and the second pulse satisfies (the irradiation intensity of the first optical pulse)≧(the irradiation intensity of the second optical pulse). A silicon thin film with a small trap state density is thus manufactured by the optical irradiation. | 01-14-2010 |
| 20100006777 | PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT - A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×10 | 01-14-2010 |
| 20100012858 | METHODS FOR FORMING DENSE DIELECTRIC LAYER OVER POROUS DIELECTRICS - Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface. | 01-21-2010 |
| 20100019172 | Multi-column electron beam exposure apparatus and multi-column electron beam exposure method - A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup. | 01-28-2010 |
| 20100025595 | Electro-optical device - An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode. | 02-04-2010 |
| 20100025596 | FASTENING APPARATUS - One embodiment of this fastening apparatus comprises a body with a passage through its length, a threaded member, a locking member, and a bowed ring. The threaded member is retained by the locking member in the passage. The bowed ring is disposed on the body and is configured to be flexible. This body may be fabricated of graphite in one instance. | 02-04-2010 |
| 20100032586 | Uniform Large-Grained And Grain Boundary Location Manipulated Polycrystalline Thin Film Semiconductors Formed Using Sequential Lateral Solidification And Devices Formed Thereon - Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homogenizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homogenized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film. | 02-11-2010 |
| 20100038562 | RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a laser constructed and arranged to generate a beam of radiation directed to a plasma generation site where a plasma is generated when the beam of radiation interacts with a fuel, an optical component having a surface that is arranged and positioned to be hit by a droplet of fuel, and a temperature conditioner constructed and arranged to elevate the temperature of the surface. | 02-18-2010 |
| 20100044590 | LASER PROCESSING METHOD - A laser processing method for processing a wafer including a substrate layer and a device layer composed of a plurality of devices formed on the front side of the substrate layer, wherein a laser beam is applied to the wafer from the back side in a defocused condition where the focal position of the laser beam is spaced apart from the surface position of the substrate layer on the back side by a predetermined distance. | 02-25-2010 |
| 20100044591 | RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A radiation source includes a beam generator configured to generate a radiation beam to be used to produce a radiation output of the radiation source, and a beam monitor, configured to monitor the radiation beam. A lithographic apparatus includes the radiation source. A device manufacturing method includes generating a first type of radiation by utilizing a beam of a second type of radiation, monitoring a quality of the second type of radiation, and projecting a patterned beam of the first type of radiation onto a substrate. | 02-25-2010 |
| 20100044592 | SERIAL IRRADIATION OF A SUBSTRATE BY MULTIPLE RADIATION SOURCES - A system for configuring and utilizing J electromagnetic radiation sources (J≧2) to serially irradiate a substrate. Each source has a different function of wavelength and angular distribution of emitted radiation. The substrate includes a base layer and I stacks (I≧2; J≧I) thereon. P | 02-25-2010 |
| 20100044593 | LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - In an immersion lithographic apparatus, bubble formation in immersion liquid is reduced or prevented by reducing a gap size or area on a substrate table and/or covering the gap. | 02-25-2010 |
| 20100051829 | Method for Putting Code Information on a Wafer Case - A laser light is irradiated on a wafer case made of polymer materials that have a high transparency to visible light and a low transparency to laser light having a wavelength other than the optical wavelength. The wafer case material in the irradiated portion foams, blackens, melts or evaporates by the irradiation. Thus, wafer case information can be marked by concavities and convexities or changing color formed on the wafer case surface. The wafer case information can be formed as a one-dimensional or two-dimensional code. Multiple laser lights can be irradiated on the same portion of the wafer case surface from different directions to the wafer case surface, and thus wafer case information is marked on only the neighborhood of the wafer case surface by foaming, blackening, melting or evaporating only the neighborhood of the wafer case surface that the laser light is irradiated on. | 03-04-2010 |
| 20100051830 | SEMICONDUCTOR PROCESSING APPARATUS AND SEMICONDUCTOR PROCESSING METHOD - A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film. | 03-04-2010 |
| 20100096566 | Reducing Line Edge Roughness by Particle Beam Exposure - Reducing line edge roughness by particle beam exposure is generally described. In one example, a method includes forming one or more line structures on a surface of a semiconductor substrate, aligning the one or more line structures to a beam path of a particle beam such that particles of the particle beam travel within 45 degrees of parallel to a lengthwise direction of the one or more line structures, and exposing the one or more line structures to the particle beam to reduce line edge roughness of the one or more line structures wherein an incident angle of the particle beam to the surface of the semiconductor substrate is between about 45 degrees and about 90 degrees, where 0 degrees is normal to the surface of the semiconductor substrate. | 04-22-2010 |
| 20100117008 | PARTICLE ATTACHMENT PREVENTING METHOD AND SUBSTRATE PROCESSING APPARATUS - In a particle attachment preventing method in a substrate processing apparatus, an electron density control power supplied from the second power supply is adjusted such that an electron density above the substrate gets lower than during a plasma processing, for a preset short period of time after the plasma processing is ended, and a bias power supplied from the first power is maintained for the preset short period of time. The second power supply is a high frequency power supply for supplying a high frequency power having a frequency that is higher than that of the bias power, and in said adjusting of the electron density control power, the high frequency power supplied from the second power supply is lowered as compared with that during the plasma processing. | 05-13-2010 |
| 20100127189 | COMPUTER PERIPHERALS STERILIZATION SYSTEM - A system and method including a wand-type ultraviolet (UV) light assembly positioned above a keyboard and other computer peripheral device(s) to be sanitized. The UV light assembly is preferably moved across the peripheral device surface to eliminate nearly all germs, bacteria, viruses, pathogens and other microorganisms that have accumulated on the surfaces of the keyboard and other peripherals. Desirably, the system operation is managed by a controller device which is in communication with a host computer. In addition, the system allows for the collection and analysis of system performance data. The invention provides an extremely effective, compact, virtually cost-free and environmentally-friendly solution to disinfecting surfaces of keyboards and other peripheral devices. | 05-27-2010 |
| 20100187444 | FIELD-BY-FIELD LASER ANNEALING AND FEED FORWARD PROCESS CONTROL - A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area. | 07-29-2010 |
| 20100207040 | LIGHT EXPOSURE APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME - When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position. | 08-19-2010 |
| 20100276611 | HIGH-INTENSITY ELECTROMAGNETIC RADIATION APPARATUS AND METHODS - An apparatus for producing electromagnetic radiation includes a flow generator configured to generate a flow of liquid along an inside surface of an envelope, first and second electrodes configured to generate an electrical arc within the envelope to produce the electromagnetic radiation, and an exhaust chamber extending outwardly beyond one of the electrodes, configured to accommodate a portion of the flow of liquid. In another aspect, the flow generator is electrically insulated. In another aspect, the electrodes are configured to generate an electrical discharge pulse to produce an irradiance flash, and the apparatus includes a removal device configured to remove particulate contamination from the liquid, the particulate contamination being released during the flash and being different than that released by the electrodes during continuous operation. | 11-04-2010 |
| 20110012029 | PATTERN OBSERVATION METHOD - The pattern observation method for observing a pattern which is formed on an insulating film, includes: irradiating an entirety of the pattern with a charged particle beam, to obtain a temporary image of the pattern which has region information of a convex pattern and a concave pattern; irradiating the convex and concave patterns with the charged particle beam having a first and second voltages based on the region information, to thereby form an electric field between a top surface of the convex pattern and a bottom surface of the concave pattern so that charged particles emitted from the bottom surface of the concave pattern may be drawn out to an outside of the pattern; and irradiating the entirety of the pattern with the charged particle beam to obtain an image of the pattern having the information of the bottom surface of the concave pattern. | 01-20-2011 |
| 20110031416 | Liquid jet and recovery system for immersion lithography - A photolithography tool for use in manufacturing semiconductor devices, includes a wafer stage, a lens, and a liquid dispensing assembly by which liquid is introduced between a surface of a semiconductor wafer disposed on the wafer stage and the lens, along a direction away from the semiconductor wafer at its edge. | 02-10-2011 |
| 20110042587 | EUV projection lens and optic system having the same - An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution. | 02-24-2011 |
| 20110049393 | Lithography Machine and Substrate Handling Arrangement - An arrangement comprising a plurality of charged particle lithography apparatuses, each charged particle lithography apparatus having a vacuum chamber. The arrangement further comprises a common robot for conveying wafers to the plurality of lithography apparatuses, and a wafer load unit for each charged particle lithography apparatus arranged at a front side of each respective vacuum chamber. The plurality of lithography apparatuses are arranged in a row with the front side of the lithography apparatuses facing an aisle accommodating passage of the common robot for conveying wafers to each apparatus, and the rear side of each lithography apparatus faces an access corridor, and the back wall of each vacuum chamber is provided with an access door for access to the respective lithography apparatus. | 03-03-2011 |
| 20110095207 | METHOD AND APPARATUS OF HALOGEN REMOVAL USING OPTIMAL OZONE AND UV EXPOSURE - A method and apparatus for removing halogen residue from a processed wafer is provided. A wafer is transferred into a processing tool where it is processed in a manner that leaves halogen residue on the wafer. The processed wafer is then moved into a degas chamber where it is treated with UV light and a gas mixture containing at least one of ozone and oxygen to remove the halogen residue. Once treated, the wafer is transferred into an isolation station where it is isolated from the unprocessed wafers for a period of time to allow any remaining residue to dissipate before it is returned to the cassette where it started. | 04-28-2011 |
| 20110114855 | LASER ANNEALING METHOD AND DEVICE - A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction. | 05-19-2011 |
| 20110121206 | FEMTOSECOND LASER-INDUCED FORMATION OF SUBMICROMETER SPIKES ON A SEMICONDUCTOR SUBSTRATE - The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface. | 05-26-2011 |
| 20110204263 | METHODS FOR PERFORMING CIRCUIT EDIT OPERATIONS WITH LOW LANDING ENERGY ELECTRON BEAMS - Methods for using sub-100V electron beam landing energies for performing circuit edit operations. Circuit edit operations can include imaging for navigation and etching in the presence of a suitable gas. Low landing energies can be obtained by modifying a decelerator system of native FESEM equipment, or by using biasing means near the sample surface for decelerating electrons of the primary beam. At low landing energies near the operating voltage of a semiconductor circuit, voltage contrast effects can be visually seen for enhancing operator navigation. Low landing energies can be used during etching processes for minimizing the interaction volume of the beam and obtaining accurate and localized etching. | 08-25-2011 |
| 20110226967 | Electron beam lithography apparatus and electron beam lithography method - An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits. | 09-22-2011 |
| 20110233430 | Ultraviolet treatment apparatus - A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate. | 09-29-2011 |
| 20120138823 | Dislocation Engineering Using a Scanned Laser - A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions. | 06-07-2012 |
| 20120256105 | SEMICONDUCTOR EXPOSURE DEVICE USING EXTREME ULTRA VIOLET RADIATION - The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity. | 10-11-2012 |
| 20130043412 | SERIAL IRRADIATION OF A SUBSTRATE BY MULTIPLE RADIATION SOURCES - A system for configuring and utilizing J electromagnetic radiation sources (J≧2) to serially irradiate a substrate. Each source has a different function of wavelength and angular distribution of emitted radiation. The substrate includes a base layer and I stacks (I≧2; J≦I) thereon. P | 02-21-2013 |
| 20130068970 | UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations - A UV irradiation apparatus for treating substrates includes: at least two process stations each provided with a UV transmissive window; at least one electric UV lamp using two electrodes in a gas tube extending over the UV transmissive windows of the process stations aligned along the gas tube and shared by the process stations; a UV transmissive zone disposed between the UV lamp and the process stations and provided with reflectors; and shutters for blocking UV light from being transmitted to the respective process stations independently. | 03-21-2013 |
| 20130134327 | METHOD AND SYSTEM FOR REDUCING DEVICE PERFORMANCE DEGRADATION OF ORGANIC DEVICES - Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation. | 05-30-2013 |
| 20130320242 | PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT - A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×10′ | 12-05-2013 |
| 20130341534 | SENSOR PROVIDED WITH METAL OXIDE FILM AND USE THEREOF - A sensor capable of detecting light, hydrogen gas, and air pressure includes a metal oxide film produced by a process including the steps of: (a) forming an organic film by using a primer composition containing (i) an addition polymerizable compound including three or more reactive groups, (ii) an addition polymerizable compound including an acid group, and (iii) an addition polymerizable compound including a hydrophilic functional group; (b) forming a metal (M1) salt from the acid group; (c) substituting the metal (M1) salt of the acid group with a metal (M2) salt by treating the organic film with a metal (M2) ion aqueous solution; (d) reducing the metal (M2) ion so that a metal film is formed on a surface of the organic film; and (e) oxidizing the metal film. | 12-26-2013 |
| 20140001379 | TERAHERTZ WAVE MODULATOR BASED ON HOLE-INJECTION AND -TRANSFER | 01-02-2014 |
| 20140084184 | APPARATUS FOR AND METHOD OF DRAWING - A drawing apparatus accepts a selection manipulation for selecting the type of shape of a light outgoing ratio function defining a relationship between the position of modulation units included in an optical unit as seen in the direction of the arrangement of the modulation units and a light outgoing ratio from among a plurality of shape type candidates. The drawing apparatus then adjusts the light outgoing ratio of each of the modulation units in accordance with the accepted shape type. While emitting a beam of drawing light of a strip-shaped cross-sectional configuration from the optical unit, the drawing apparatus moves the optical unit relative to a substrate in a direction orthogonal to the direction of the longer dimension of the strip-shaped cross section of the drawing light beam to perform a drawing process on the substrate. | 03-27-2014 |
| 20140110606 | NEAR-FIELD OPTICAL DEFECT INSPECTION APPARATUS - A near-field optical defect inspection apparatus according to an aspect of this invention includes a motor, a slider, a slider-moving mechanism, a light source, and a light-collecting probe. The motor rotates an object to be inspected. The slider slides above the rotating object. The slider-moving mechanism supports the slider and moves it above the object rotated by the motor. The light source emits inspection light that irradiates the object rotated by the motor, the inspection light propagating through an internal region of the object to be inspected. The light-collecting probe has an opening, from which the probe collects near-field light due to a defect in the object irradiated with the inspection light. The opening, formed on a surface of the slider that is opposed to the object to be inspected, has a maximal diameter smaller than a wavelength of visible light. | 04-24-2014 |
| 20140117258 | Laser-Driven Light Source - An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light. | 05-01-2014 |
| 20140158914 | OPTICAL COMPONENT WITH BLOCKING SURFACE AND METHOD THEREOF - An optical component arranged for use in a low pressure environment including: a surface arranged to receive extreme ultra-violet (EUV) light and a coating, on the surface, arranged to block at least one contaminant in the low pressure environment from binding to the surface. A method of mitigating contamination of a surface of an optical component, including: inserting the optical component into a chamber for a semi-conductor inspection system, controlling a temperature and a pressure within the chamber, introducing a blocking material, in a gaseous state, into the chamber, coating a surface of the optical component with the blocking material, and preventing, using the coating, a contaminant in the chamber from binding to the optical component. | 06-12-2014 |
| 20140246605 | DEFECT REMOVAL PROCESS - A process is provided for the removal of defects, for example, micro-bridging defects during device fabrication. In one aspect, a method includes: obtaining a wafer after lithography processing and exposing the wafer to at least one electron beam. In another aspect, a system includes: selecting a substrate with micro-bridging defects after the substrate undergoes lithography processing; preparing the substrate for exposure to at least one electron beam; and exposing the substrate to the at least one electron beam. | 09-04-2014 |
| 20140284500 | SETTLING TIME ACQUISITION METHOD - A settling time acquisition method includes writing at least one reference pattern formed by at least one shot of a charged particle beam, writing an evaluation pattern, which has been formed by combination of the first and second shots of a charged particle beam shaped to first and second patterns of different sizes and whose width size is the same as that of the reference pattern, while changing, concerning beam shaping of the second shot, a settling time of a DAC amplifier, wherein writing is performed for each settling time, measuring the width size of the reference pattern, measuring the width size of the evaluation pattern for each settling time, calculating, for each settling time, a difference between the width sizes of the reference and evaluation patterns, and acquiring a settling time from each settling time of the DAC amplifier when the difference is not exceeding a threshold value. | 09-25-2014 |
| 20150097126 | ALIGNMENT SENSOR AND HEIGHT SENSOR - One embodiment relates to a device that senses alignment and height of a work piece. The device may include both an alignment sensor and a height sensor. The alignment sensor generates a first illumination beam that illuminates an alignment mark on the work piece so as to create a first reflected beam, and determines the alignment of the work piece using the first reflected beam. The height sensor generates a second illumination beam that is directed to a surface of the work piece at an oblique angle so as to form a second illumination spot and images the second illumination spot to determine the height of the work piece. Other embodiments, aspects and features are also disclosed. | 04-09-2015 |
| 20150102236 | ELECTRON BEAM EXPOSURE APPARATUS AND METHOD OF DETECTING ERROR USING THE SAME - An electron beam exposure apparatus includes an electron beam source, a stage, and an error detection device. The electron beam source radiates a first electron beam corresponding to first input data and a second electron beam corresponding to second input data. The stage includes a mask on which the first electron beam is radiated. The stage may be configured to move the mask. The error detection device detects an error of the second electron beam and outputs error detection information. | 04-16-2015 |
| 20150108373 | Photon Source, Metrology Apparatus, Lithographic System and Device Manufacturing Method - A laser driven light source comprises laser and focusing optics. These produce a beam of radiation focused on a plasma forming zone within a container containing a gas (e.g., Xe). Collection optics collects photons emitted by a plasma maintained by the laser radiation to form a beam of output radiation. Plasma has an elongate form (L>d) and collecting optics is configured to collect photons emerging in the longitudinal direction from the plasma. The brightness of the plasma is increased compared with sources which collect radiation emerging transversely from the plasma. A metrology apparatus using the light source can achieve greater accuracy and/or throughput as a result of the increased brightness. Back reflectors may be provided. Microwave radiation may be used instead of laser radiation to form the plasma. | 04-23-2015 |
| 20150348740 | PROCESSING APPARATUS AND PROCESSING METHOD - A processing apparatus according to the present embodiment includes a piezoelectric sensor unit, an irradiating unit, a calculating unit, a moving unit, and a controlling unit. The piezoelectric sensor unit is mounted with an object and outputs an electric signal corresponding to a pressure due to the weight of the object. The irradiating unit irradiates a portion of the object on the piezoelectric sensor unit with a beam. The calculating unit calculates a first amount of misregistration between the portion of the object which should be irradiated with the beam and an actual position irradiated by the beam on the basis of the electric signal from the piezoelectric sensor unit. The moving unit moves the irradiating unit. The controlling unit controls the irradiating unit or the moving unit in accordance with the first amount of misregistration. | 12-03-2015 |
| 20160004161 | PATTERNING METHOD USING ELECTRON BEAM AND EXPOSURE SYSTEM CONFIGURED TO PERFORM THE SAME - A patterning method may employ a particle beam, such as an electron beam (E-beam) and an exposure system that may include preparing an exposure layout defining a spatial distribution of an E-beam, performing an E-beam exposure process to a mask layer, based on the exposure layout, performing a developing process to the mask layer to form mask patterns including a first pattern. The first pattern may be a single solid pattern, and the exposure layout may include a first data associated with a plurality of E-beam conditions defined for a first region corresponding to the first pattern. | 01-07-2016 |
| 20160029471 | TARGET FOR EXTREME ULTRAVIOLET LIGHT SOURCE - Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light. | 01-28-2016 |
| 20160041411 | SUPPRESSION OF ELECTRON-HOLE RECOMBINATION USING ORBITAL ANGULAR MOMENTUM SEMICONDUCTOR DEVICES - An apparatus for suppressing electron/hole recombination includes a photonic device that generates electron/hole pairs responsive to a light beam interacting with the photonic device. An orbital angular momentum (OAM) generation device is located to impart an orbital angular momentum to a light beam before the light beam interacts with the photonic device. The electron/hole pair recombination generated from an OAM imparted light beam is less than electron/hole pair recombination of a non-OAM imparted light beam. | 02-11-2016 |
| 20160113101 | EUV LIGHT SOURCE AND EXPOSURE APPARATUS - An extreme ultraviolet (EUV) light source is provided. The EUV light source comprises a spray nozzle array having a plurality of spray nozzles configured to spray a plurality of rows of droplets to an irradiating position. The EUV light source also includes a laser source having a first reflective mirror and a second reflective mirror configured to generate a first laser beam and a second laser beam, and to cause the first laser beam and the second laser beam to sequentially bombard the plurality of droplets arriving at the irritating position to generate EUV light with increased output power. Further, the EUV light source includes a light focusing device a light focusing device comprising a first partial focusing mirror and a second partial focusing mirror configured to perform a rotating scanning to collect EUV light and focus the collected EUV light at a central focusing point. | 04-21-2016 |
| 20160128200 | ASHING APPARATUS - An ashing apparatus includes a treatment chamber having an object to be processed therein, and a lamp chamber having an ultraviolet lamp that radiates the object with an ultraviolet beam. The ashing apparatus is configured to accurately maintain an irradiation distance between a light source and the object. Thus, it is possible to efficiently remove a smear from a wiring board. The treatment chamber and the lamp chamber are moved relative to each other and in parallel to a surface of the object to be processed. The treatment chamber has a stage that supports the object, a gas inlet opening for supplying a treatment gas into the treatment chamber, and a gas outlet opening for discharging the treatment gas. An ultraviolet transmitting window member that partitions the treatment chamber and the lamp chamber from each other is fixed to the treatment chamber. | 05-05-2016 |
| 20190148110 | METHOD OF MANUFACTURING PHOTO MASKS | 05-16-2019 |
