Class / Patent application number | Description | Number of patent applications / Date published |
219121400 | Etching | 20 |
20110297650 | ASSEMBLY FOR DELIVERING RF POWER AND DC VOLTAGE TO A PLASMA PROCESSING CHAMBER - A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor. | 12-08-2011 |
20120091104 | MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY - An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance. | 04-19-2012 |
20130112666 | PLASMA PROCESSING APPARATUS - In the plasma processing apparatus of the present invention, a first electrode ( | 05-09-2013 |
20140263199 | Pulse Synchronization By Monitoring Power In Another Frequency Band - A radio frequency (RF) power delivery system includes a first RF generator and a second RF generator. The first RF generator operates as a master RF generator, and the second RF generator operates as a slave RF generator. The slave RF generator includes a detector for sensing an electrical characteristic of the RF signal of the slave RF generator. The slave RF generator also includes a detector for sensing an electrical characteristic of the RF signal from the master RF generator. Operation of the slave RF generator is controlled by a host or controller. The host or controller operates the slave RF generator in accordance with electrical properties determined by the second detector. | 09-18-2014 |
219121410 | Methods | 6 |
20090001057 | Dual damascene trench depth detection and control using voltage impedance RF probe - In one embodiment, a system to measure changes and a dual damascene trench depth, comprises a power source, and impedance matching network coupled to the power source and to an electrode, a radio frequency sensor coupled to the impedance matching network, and a controller to establish a baseline correlation between a plasma impedance and the dual damascene trench depth, and use the baseline correlation to measure changes in the dual damascene trench depth. | 01-01-2009 |
20090242520 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator. | 10-01-2009 |
20100181294 | FOCUS RING HEATING METHOD, PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas to the vacuum processing chamber; a high frequency power supply unit for supplying a high frequency power to the lower electrode; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In a method for performing a plasma etching on a substrate by using the plasma etching apparatus, a plasma is generated in the vacuum processing chamber to perform the plasma etching on the substrate by using the plasma after the focus ring is heated by supplying a high frequency power from the high frequency power supply unit to the lower electrode under a condition that no plasma is generated. | 07-22-2010 |
20110024399 | PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING - Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process. | 02-03-2011 |
20120145679 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential. | 06-14-2012 |
20140332504 | WELD BEAD SHAPING APPARATUS AND WELD BEAD SHAPING METHOD - A weld bead shaping apparatus including: a gouging torch for gouging an object to be shaped; a shape sensor for measuring a shape of the object; a slider apparatus and an articulated robot for driving the gouging torch and shape sensor; an image processing apparatus; and a robot controlling apparatus. The image processing apparatus includes: a shape data extracting unit extracting shape data of the object, from a measurement result obtained by the shape sensor; and a weld reinforcement shape extracting/removal depth calculating unit calculating a weld reinforcement shape of the weld bead from a difference between the shape data and a preset designated shape of the object, and calculating a removal depth by which gouging is performed, based on the weld reinforcement shape. The robot controlling apparatus controls the slider apparatus, the articulated robot, and the gouging torch based on the weld reinforcement shape and the removal depth. | 11-13-2014 |
219121420 | Rate control | 1 |
20120152914 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND NON-TRANSITORY COMPUTER-READABLE MEDIUM - A plasma processing apparatus includes: a process chamber which accommodates a substrate to be processed; a lower electrode disposed in the process chamber; an upper electrode including an electrode plate that is detachable and discharges a process gas inside the form of shower into the process chamber; a gas supply unit including a central pipe and a edge pipe for supplying the process gas to the upper electrode; a first high frequency power source which applies high frequency power for plasma generation to the lower electrode; pressure indicators which detect pressures inside gas supply pipes; and a controller which measures a degree of consumption of the electrode plate based on the pressures detected by the pressure indicators and calculates a variation in process rate resulting due to the consumption of the electrode plate to adjust process conditions to resolve the variation in process rate. | 06-21-2012 |
219121430 | With chamber | 9 |
20090127234 | PLASMA PROCESSING CHAMBER WITH GUARD RING FOR UPPER ELECTRODE ASSEMBLY - A plasma processing chamber, which includes an upper electrode assembly, a lower electrode assembly, and a plasma confinement assembly. The upper electrode assembly includes an upper electrode, a backing member, the backing member attachable to an upper surface of the upper electrode, and a guard ring surrounding an outer surface of the backing member and located above the upper surface of the upper electrode, wherein the guard ring is configured to provide an inner gap between the outer surface of the backing member and an inner periphery of the guard ring. The lower electrode assembly is adapted to receive a semiconductor substrate. The plasma confinement assembly is separated from an outer periphery of the upper electrode and the backing member by the guard ring. | 05-21-2009 |
20090250444 | Microwave plasma processing device - A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave. | 10-08-2009 |
20110000894 | COOLING BLOCK FORMING ELECTRODE - The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen. | 01-06-2011 |
20110049111 | COLOR SYSTEM FOR ETCHING GAS - A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit distributes the etching gas to an upper gas injector and a side gas injector connected with the mass flow control unit and installed in the chamber. The tuning gas control unit distributes and supplies a supplementary gas and tuning gas controlling an ion density and distribution of plasma within the chamber, to the mass flow control unit and the flow rate control unit. | 03-03-2011 |
20120223060 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In an inductively coupled plasma processing apparatus, an RF antenna | 09-06-2012 |
20130233834 | RAPID THERMAL PROCESSING SYSTEMS AND METHODS FOR TREATING MICROELECTRONIC SUBSTRATES - Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated plasma to a surface of the microelectronic substrate, and raising a temperature of the microelectronic substrate with the generated plasma applied to the surface of the microelectronic substrate. The method further includes continuing to apply the generated plasma until the microelectronic substrate reaches a desired temperature. | 09-12-2013 |
20130277339 | PLASMA REACTOR ELECTROSTATIC CHUCK WITH COOLED PROCESS RING AND HEATED WORKPIECE SUPPORT SURFACE - Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages. | 10-24-2013 |
20130284709 | ELECTROSTATIC CHUCK HAVING REDUCED POWER LOSS - Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an electrostatic chuck, as well as methods for testing and manufacture thereof. In one embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a conductive base, and a ceramic body disposed on the conductive base, the ceramic body comprising an electrode and one or more heating elements embedded therein, wherein the ceramic body comprises a dissipation factor of about 0.11 to about 0.16 and a capacitance of about 750 picoFarads to about 950 picoFarads between the electrode and the one or more heating elements. | 10-31-2013 |
20150366004 | MULTI ZONE HEATING AND COOLING ESC FOR PLASMA PROCESS CHAMBER - An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of fluid conduits disposed beneath the top surface. A chuck assembly further includes a plurality of resistive heater rods spatially distribute across the chuck assembly. In embodiments, 169 heater rods and three heat transfer fluid flow controls are independently controlled during execution of a plasma etch process. | 12-17-2015 |