| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204298310 | Etching | 29 |
| 20090120790 | LOW CONTAMINATION COMPONENTS FOR SEMICONDUCTOR PROCESSING APPARATUS AND METHODS FOR MAKING COMPONENTS - Components of semiconductor processing apparatus axe formed at least: partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives. | 05-14-2009 |
| 20090255809 | METHOD OF CLEANING THE SURFACE OF A MATERIAL COATED WITH AN ORGANIC SUBSTANCE AND GENERATOR AND DEVICE FOR CARRYING OUT SAID METHOD - A method for the continuous cleaning of the surface of a material ( | 10-15-2009 |
| 20120247954 | PLASMA PROCESSING APPARATUS - Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced. | 10-04-2012 |
| 204298320 | Measuring, analyzing or testing | 4 |
| 20090095621 | SUPPORT ASSEMBLY - A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body. | 04-16-2009 |
| 20100108506 | METHOD AND APPARATUS FOR CONTROLLING TOPOGRAPHICAL VARIATION ON A MILLED CROSS-SECTION OF A STRUCTURE - An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles. | 05-06-2010 |
| 20130220806 | ION MILLING DEVICE - An ion milling device of the present invention is provided with a tilt stage ( | 08-29-2013 |
| 20140124367 | SAMPLE PREPARATION APPARATUS, SAMPLE PREPARATION METHOD, AND CHARGED PARTICLE BEAM APPARATUS USING THE SAME - There is provided an apparatus as well as a method for polishing, observing, and additionally polishing a sample in a vacuum with a charged particle beam apparatus furnished with no other apparatus. | 05-08-2014 |
| 204298330 | Specified gas feed or withdrawal | 3 |
| 20090014323 | HIGH TEMPERATURE CATHODE FOR PLASMA ETCHING - The present invention generally is a cathode suitable for use in high temperature plasma etch applications. In one embodiment, the cathode includes a ceramic electrostatic chuck secured to a base. The base has cooling conduits formed therein. A rigid support ring is disposed between the chuck and the base, thereby maintaining the chuck and the base in a spaced-apart relation. | 01-15-2009 |
| 20110220495 | IGNITION APPARATUS FOR ARC SOURCES - The present invention relates to an ignition device for igniting a high-current discharge of an electrical arc evaporator in a vacuum coating system. Ignition is performed by means of mechanically closing and opening a contact between the cathode and the anode. Contact is established by means of an ignition finger that can move on a forced path. On account of the forced path, the ignition finger can be moved by means of a simple mechanical drive to a park position, which is protected against coating, and said ignition finger can also be used to ignite a second target. | 09-15-2011 |
| 20140231251 | GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS AND METHOD OF FABRICATING GAS SUPPLY MEMBER - An aspect of the present embodiment, there is provided a gas supply member includes a body, and a gas supply path penetrating into the body, the gas supply path including a first channel at an inlet side and a second channel connected to the first channel at an outlet side, the first channel having a first diameter and a diameter of the second channel being monotonically increased towards the outlet side from the first diameter to a second diameter, wherein an alumina film is provided on a first sidewall of the first channel, an yttrium-containing film is provided on a second sidewall of the second channel and a surface of the body at the outlet side. | 08-21-2014 |
| 204298340 | Auxiliary electrode, bias means or specified power supply | 3 |
| 20130153415 | Combinatorial RF Biasing for Selectable Spot-Site Isolation - An apparatus for combinatorial RF biasing at selectable spots includes one or more RF biasing elements that can be moved to or selectively activated to provide an RF hot spot. The RF hot spot may be selectively provided at various locations of a substrate such as a wafer undergoing combinatorial processing. An RF biasing element may be moved, via a movable arm, to a select location. Alternatively or additionally, more than one RF biasing element may be provided in an array so that an RF biasing element corresponding to the select location is activated. The apparatus may be coupled to or disposed within a substrate support such as a chuck such that the apparatus can operate with a combinatorial processing apparatus. | 06-20-2013 |
| 20130206594 | PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE - Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended. | 08-15-2013 |
| 20130264201 | METHOD AND APPARATUS FOR HIGH ASPECT RATIO DIELECTRIC ETCH - An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system. | 10-10-2013 |
| 204298350 | Multi-chamber, load/unload means or moving workpiece | 2 |
| 20090014324 | INTEGRATED APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES - A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber. | 01-15-2009 |
| 20090145752 | SYSTEM AND METHOD FOR DUAL-SIDED SPUTTER ETCH OF SUBSTRATES - A system is provided for etching patterned media disks. A movable electrode is utilized to perform sputter etch. The electrode moves to near or at slight contact to the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors. | 06-11-2009 |
| 204298360 | Beam or directed flux etching (e.g., ion beam, etc.) | 11 |
| 20080302657 | Method and Apparatus for Ion Milling - The present invention relates to methods and apparatus for ion milling, and more particularly relates to methods and apparatus for smoothing a surface using ion milling. | 12-11-2008 |
| 20100018858 | FREQUENCY ADJUSTING APPARATUS - A wafer having a plurality of elements closely arranged thereon is irradiated with an ion beam while being conveyed in one direction by a conveying unit. Each of shutters adjusts an irradiation time during which a target area of the wafer is irradiated with the ion beam. Thus, a frequency in the target area is adjusted. Each of a plurality of mask holes in a pattern mask disposed between the wafer and the shutters corresponds to one area of the wafer. The mask holes are alternately displaced in a wafer conveying direction in which the wafer is conveyed, and are arranged in a plurality of columns perpendicular to the wafer conveying direction. To individually open and close the mask holes, the shutters are arranged to correspond to the respective mask holes. Thus, frequency adjustment, for areas in one column perpendicular to the wafer conveying direction, is performed in multiple steps. | 01-28-2010 |
| 20100096263 | Solid surface smoothing apparatus - In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle θ chosen to be something like 90° as a first step, and subsequently at an irradiation angle θ chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times. | 04-22-2010 |
| 20120325656 | ELECTRON BEAM SCULPTING OF TUNNELING JUNCTION FOR NANOPORE DNA SEQUENCING - A technique for a nanodevice is provided that includes a reservoir filled with a conductive fluid and a membrane separating the reservoir. The membrane includes an electrode layer having a tunneling junction formed therein. A nanopore is formed through the membrane, and the nanopore is formed through other layers of the membrane such that the nanopore is aligned with the tunneling junction of the electrode layer. When a voltage is applied to the electrode layer, a tunneling current is generated by a base in the tunneling junction to be measured as a signature for distinguishing the base. When an organic coating is formed on an inside surface of the tunneling junction, transient bonds are formed between the electrode layer and the base. | 12-27-2012 |
| 20130032478 | LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER - Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees. | 02-07-2013 |
| 20130240353 | ION MILLING DEVICE AND ION MILLING PROCESSING METHOD - The sample | 09-19-2013 |
| 20140353151 | CHARGED PARTICLE BEAM IRRADIATION APPARATUS - The purpose of the present invention is to provide a charged particle beam irradiation apparatus of a relatively simple structure which performs cooling on a sample or a sample stage. An aspect of the present invention comprises: a charged particle source; a sample stage; and a driving mechanism that comprises a transmission mechanism which transmits a driving force to move the sample stage. The charged particle beam irradiation apparatus comprises a container capable of accommodating an ionic liquid ( | 12-04-2014 |
| 20150008121 | ION MILLING DEVICE - The present invention aims at providing an ion milling device that can set a high-precision processing area with a simple structure. In order to achieve the above object, there is proposed an ion milling device including a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam, in which the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface. | 01-08-2015 |
| 20160035539 | Microfabrication - A microfabrication apparatus for fabricating a microstructure on a substrate is disclosed and comprises a partitioning system arranged to provide an aperture, a particle source that can generate a beam of particles for patterning the substrate and a substrate holder which supports the substrate. Relative motion is effected between the aperture and the substrate over a portion of the substrate's surface so that different points on the surface portion are exposed at different times. Whilst that motion is ongoing, one or more exposure conditions are varied so that the different points are subject to different exposure conditions. Corresponding microfabrication processes and products obtained thereby are also disclosed. | 02-04-2016 |
| 20160071694 | METHOD OF SMOOTHING SOLID SURFACE WITH GAS CLUSTER ION BEAM AND SOLID SURFACE SMOOTHING APPARATUS - A solid surface smoothing apparatus for smoothing a solid surface with a gas cluster ion beam includes a plurality of gas cluster ion beam emitters, each emitter having an irradiation axis and emitting a respective gas cluster ion beam along its irradiation axis onto the solid surface, wherein irradiation axes of the plurality of the gas cluster ion beam emitters are not parallel to each other so as to expose substances in the solid surface transferred laterally by collisions with gas clusters to collisions with other gas clusters so that the substances do not remain on the solid surface. | 03-10-2016 |
| 20160172158 | SAMPLE HOLDER AND FOCUSED-ION-BEAM MACHINING DEVICE PROVIDED THEREWITH | 06-16-2016 |
| 204298370 | Magnetically enhanced | 3 |
| 20080283394 | MAGNETRON SPUTTERING TARGET - A magnetron sputtering target, which can improve utilization rate and service life of target materials and can be used in a magnetron sputtering technology, is provided. The magnetron sputtering target comprises a target material, a target back plate, an insulating pad, a target cathode frame, one or more leading pole piece adjustment pads, and one or more juxtaposed magnets, which are stacked in order. The leading pole piece adjustment pad is disposed between the insulating pad and the magnet. | 11-20-2008 |
| 20100140085 | MAGNETRON PLASMA PROCESSING APPARATUS - A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located. | 06-10-2010 |
| 20140346040 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus can easily control a plasma intensity distribution in a processing space. A substrate processing apparatus | 11-27-2014 |
