Entries |
Document | Title | Date |
20090000946 | PLASMA PROCESSING WITH ENHANCED CHARGE NEUTRALIZATION AND PROCESS CONTROL - A plasma processing apparatus includes a platen that supports a substrate for plasma processing. A RF power supply generates a multi-level RF power waveform at an output having at least a first period with a first power level and a second period with a second power level. A RF plasma source having an electrical input that is electrically connected to the output of the RF power supply generates at least a first RF plasma with the first RF power level during the first period and a second RF plasma with the second RF power level during the second period. A bias voltage power supply having an output that is electrically connected to the platen generates a bias voltage waveform that is sufficient to attract ions in the plasma to the substrate for plasma processing. | 01-01-2009 |
20090078569 | INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS - An inductively coupled plasma processing apparatus according to the present invention prevents debris formed through a sputter etching operation from forming a film on an inner face of a side wall part | 03-26-2009 |
20100059366 | TEXTURED CHAMBER SURFACE - A method of fabricating a process chamber component having a textured surface with raised features. The method comprises providing a process chamber component having a surface, and forming a patterned resist layer on the process chamber component, the patterned resist layer having apertures that expose portions of the surface of the process chamber component therethrough. A textured surface having raised features is formed on the process chamber component by propelling grit particles with a gas that is pressurized to a pressure sufficiently high to cause the grit particles to erode and remove material from the surface. | 03-11-2010 |
20160111262 | Nanocluster Production Device - Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell. | 04-21-2016 |