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Magnetically enhanced

Subclass of:

204 - Chemistry: electrical and wave energy

204193000 - APPARATUS

204298010 - Coating, forming or etching by sputtering

204298020 - Coating

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
204298160 Magnetically enhanced 76
20080210556Sputtering apparatus - A sputtering apparatus with high usage efficiency of a target is provided. A sputtering apparatus of the present invention includes first and second ring magnets, first and second magnet members arranged inside a ring of the first and second ring magnets, wherein in the first and second ring magnets and the first and second magnet members, magnetic poles with the same magnetism are faced toward the rear surface of a first and a second targets. Thus, in the rear surface of the first and second targets, the magnetic poles with the same polarity are adjacently arranged, and the absolute value of the strength of horizontal magnetic field components formed in the surfaces of the first and second targets becomes small and the strength distribution becomes narrow, and the strength of vertical magnetic field components becomes uniform; and consequently, a non-erosion portion is not produced in the first and second targets.09-04-2008
20080230382SPUTTER CATHODE ASSEMBLY AND SPUTTER COATING DEVICE - A magnetron cathode assembly of the present invention comprises a drive shaft, one end being connected with a cathode or target assembly in the interior space of a vacuum chamber. A housing is rigidly mounted to the wall of a coating chamber of a sputter coating device by a flange. Between the housing and the drive shaft, a combined axial and radial bearing, such as a cross roller bearing, is arranged. The bearing supports the shaft rotatably relative to the housing. By providing the combined axial and radial bearing, the installation space of the assembly may be reduced.09-25-2008
20090026073SPUTTERING SYSTEM - A plurality of magnets are rotatably supported and when a ratio between revolution angle and rotation angle per unit time is set to 1:R, R is set to a value which is not less than 1 and not more than 5, and is not a common divisor of 360, so that the time variation of regions where a magnetic field (line of magnetic force) generated by the each magnet is orthogonal to an electric field is prevented from becoming monotonous. Further, the respective magnets are arranged to make the distances between the center of rotation and the center of revolution of the respective magnets different from each other, so that the regions where the magnetic field (line of magnetic force) generated by the each magnet is orthogonal to the electric field are dispersed in the radial direction of a target.01-29-2009
20090078571MAGNET ASSEMBLY CAPABLE OF GENERATING MAGNETIC FIELD HAVING DIRECTION THAT IS UNIFORM AND CAN BE CHANGED AND SPUTTERING APPARATUS USING THE SAME - The magnet assembly includes one rotatable dipole magnet subassembly, which is formed from a permanent magnet and a magnetically permeable convex end portion coupled to each of both ends of the permanent magnet, and at least two magnetically permeable flux guide subassemblies, which are configured so as to be magnetically coupled to the dipole magnet subassembly. The flux guide subassembly has a concave end portion that fits into the convex end portion. The flux guide assemblies guide a flux from the dipole magnet subassembly and generate a flux outside. The condition of fitting into the flux guide subassemblies is reversed by rotating the dipole magnet subassembly, whereby it is possible to easily reverse the direction of a magnetic field generated outside.03-26-2009
20090159441Plasma Film Deposition System - A plasma film deposition system increases plasma density and improves sputtering efficiency by not generating a corner of a sheet plasma and can be operated safely by preventing occurrence of the corner in sheet plasma.06-25-2009
20090188790CONCENTRIC HOLLOW CATHODE MAGNETRON SPUTTER SOURCE - A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.07-30-2009
20090218218MAGNET UNIT FOR MAGNETRON SPUTTERING SYSTEM - A magnet unit for a magnetron sputtering system includes a base plate and a plurality of magnet parts each including a first magnet and a first supporting member. The first supporting member supports the first magnet and fixes the first magnet to the base plate. The magnet parts confine a plasma.09-03-2009
20090229977Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System - Provided are a magnet structure and the like capable of changing a magnetic force line distribution on a surface of a target to thereby achieve wide erosion of a target, using a simple drive mechanism. A magnet structure (09-17-2009
20090242396ADJUSTABLE MAGNET PACK FOR SEMICONDUCTOR WAFER PROCESSING - A magnetron system is provided for a PVD system in which a magnet pack is formed in two subassemblies, one relatively moveable with respect to the other and one or both moveable relative to a sputtering target. The magnet pack may include a plurality of magnet rings that are interconnected by an annular yoke behind the magnets to provide a magnetic circuit with a magnetic field over the surface of the target. The yoke may be split into plural annular parts. By moving one or more parts of the yoke, such as by changing alignment of the yoke parts, the magnetic circuit can be changed during operation of process or at least without breaking the chamber vacuum. This allows the field strength on the surface of the target to be changed to control the utilization of the target over the life of the target, or to switch between strong and weak fields to perform a sequential deposition-etch process on a substrate in the chamber.10-01-2009
20090314636CAPACITIVE-COUPLED MAGNETIC NEUTRAL LOOP PLASMA SPUTTERING SYSTEM - A capacitive-coupled magnetic neutral line plasma sputtering system having such a structure that the utilization efficiency of a target can be increased drastically by sputtering the target uniformly, distribution of magnetic lines of force is vertical and uniform in the vicinity of the substrate, and charge up does not take place. The capacitive-coupled magnetic neutral line plasma sputtering system comprises a vacuum chamber (12-24-2009
20100012489END-BLOCK FOR A MAGNETRON DEVICE WITH A ROTATABLE TARGET, AND VACUUM COATING APPARATUS - An end block for a magnetron device having a rotatable target comprises an end block housing having a pivot bearing. The end block housing is adapted on its outer side for attachment on a support unit, and the pivot bearing is adapted on an end that is accessible from outside the end block housing, for connection to the rotatable target. The end block housing is movably attached on the support unit. A vacuum coating apparatus has a vacuum chamber, a magnetron device situated in the vacuum chamber, and a rotatable target rotatably mounted on at least one such end block.01-21-2010
20100051454MAGNETRON SPUTTERING ELECTRODE, AND SPUTTERING APPARATUS PROIDED WITH MAGNETRON SPUTTERING ELECTRODE - In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.03-04-2010
20100089748CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET - The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.04-15-2010
20100101947ARC PLASMA SOURCE - An arc plasma source 04-29-2010
20100155238RF SPUTTERING ARRANGEMENT - Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.06-24-2010
20100193354MAGNETRON SPUTTERING CATHODE - A magnetron sputtering cathode, comprising: a metal tube being hollow; and a plurality of magnet units, disposed inside the metal tube forming a plurality of sputtering zones on the surface of the metal tube, each of the sputtering zones corresponding to a substrate; wherein, each sputtering zone is provided with a magnetic tunnel and the magnetic tunnels are configured to communicate with each other to form a closed loop for guiding electrons to circulate therein. Thus, by the use of only one aforesaid magnetron sputtering cathode, multiple substrates can be coated at the same time, the waste related to plasma usage can be prevented to reduce power and target loss, and the same time that the probability of depositing the sputtered target on the portion of the sputtering chamber at the back of the magnetron sputtering cathode is reduced and thus the efficiency of the target is increased.08-05-2010
20100206726MAGNET TARGET AND MAGNETRON SPUTTERING APPARATUS HAVING THE SAME - A magnet target comprising a fixing plate, a plurality of shafts arranged in an array, a plurality of connecting rods pivotably provided onto a plate surface of the fixing plate at one end and capable of rotating about corresponding one of the shafts, and a plurality of magnets that are each attached to the other fee end of one connecting rod. The magnets comprise magnets having external S poles and magnets having external N poles, and the magnets having external S poles and magnets having external N poles are arranged alternatively in an array.08-19-2010
20100243440Mechanism for continuously varying radial position of a magnetron - A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.09-30-2010
20100270147Transportable, miniature, chamberless, low power, micro metallizer - The present invention provides a portable, compact, metallizer for metallizing an article with a coating of metal. The metallizer includes a circular transport member having a plurality of cavities each for receiving an object to be metallized; wherein each cavity and object passes through a loading station and a metallization station. The transport member moves each of the cavities to a loading station for receiving the object and then to a metallization station for metallizing the object. Vacuum means are provided for creating a partial vacuum in one of the cavities at the loading station. A metallization unit is disposed at the metallization station having a magnetron for creating an electromagnetic field for energizing a source of gas. A source of metal is impacted by the energized gas to metallize the object in one of the cavities. A turbo pump is provided for creating a high vacuum in one of the cavities when it is at the metallization station.10-28-2010
20110011737HIGH-POWER PULSE MAGNETRON SPUTTERING APPARATUS AND SURFACE TREATMENT APPARATUS USING THE SAME - A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece.01-20-2011
20110024290MAGNETIC DEVICE AND MAGNETRON SPUTTERING DEVICE USING THE SAME - A magnetron sputtering device includes a base arranged adjacent to a sputtering target, and a plurality of movable magnet assemblies. Each movable magnet assembly includes a support fixed to the base, and a plurality of magnets that are connected to each other, arranged on the support and comprising opposing poles facing the base. Each movable magnet assembly also includes a driving device to drive the plurality of magnets to slide with respect to the support.02-03-2011
20110056829CATHODE UNIT AND SPUTTERING APPARATUS PROVIDED WITH THE SAME - There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.03-10-2011
20110132758STRUCTURE FOR INCREASING UTILIZATION RATE OF TARGET - A structure for increasing utilization rate of target is disclosed, which comprises: a magnetic base, capable of moving relative to a target in a reciprocating manner; and two magnetic conductors, disposed respectively at two motion limits with respect to the reciprocating range of the magnetic base. Thereby, when the magnetic base is moved to a position close to any one of magnetic conductors, the surface magnetic field intensity of the target that is caused by the magnetic base is reduced so that the ion bombardment happening at the two ends of the target will be eased off for increasing the utilization rate of the target.06-09-2011
20110186427Cylindrical Magnetron Having a Shunt - A magnetron sputtering electrode for use in a rotatable cylindrical magnetron sputtering device, the electrode including a cathode body defining a magnet receiving chamber and a cylindrical target surrounding the cathode body. The target is rotatable about the cathode body A magnet arrangement is received within the magnet receiving chamber, the magnet arrangement including a plurality of magnets. A shunt is secured to the cathode body and proximate to a side of the magnet arrangement, the shunt extending in a plane substantially parallel to the side of the magnet arrangement. A method of fine-tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device is also disclosed.08-04-2011
20110203922THIN-FILM FORMING SPUTTERING SYSTEM - A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder: a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.08-25-2011
20110233058Magnetron Plasma Sputtering Apparatus - A magnetron plasma sputtering apparatus includes a sputtering chamber having a loading portion and an engaging portion opposite to the loading portion. A substrate is mounted to the loading portion. A target is mounted to the engaging portion. A sputtering space is defined between the loading portion and the engaging portion. A reference line extends through the loading portion, the sputtering space, and the engaging portion in sequence. A guiding coil surrounds the sputtering space with the reference line located in the center. A magnetron device is located at a side of the sputtering chamber adjacent to the engaging portion. The magnetron device has a magnetization side facing the engaging portion.09-29-2011
20110240468TARGET UTILIZATION IMPROVEMENT FOR ROTATABLE MAGNETRONS - Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material.10-06-2011
20110297537MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not. A magnet unit according to an embodiment of the present invention includes a member configured to be provided with a predetermined magnet, an internal magnet unit which is provided for the member and includes n magnet elements extending radially in the surface of the member from a predetermined position of the member in at least n (n: positive integer equal to or larger than 3) directions, the n magnet elements having one polarity on a side opposite to the member, and an external magnet unit which is provided for the member so as to surround the internal magnet unit along the shape of the internal magnet unit, the external magnet unit having the other polarity on a side opposite to the member.12-08-2011
20110297538Homing device for magnetron rotating on two arms - A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.12-08-2011
20110303536SPUTTERING APPARATUS WITH MAGNETIC MODULE - An exemplary sputtering apparatus includes a chamber, a rotatable rack, a gate, two first magnetic elements, and a second magnetic element. A sidewall of the chamber has an opening defined therein. The rotatable rack is provided in a center of the chamber. The gate is provided in the opening. The two first magnetic elements are mounted on the gate. The second magnetic element is mounted inside the chamber. The second magnetic element neighbors one of the two first magnetic elements. A first angle is defined between two imaginary lines running from the rack to each of the two first magnetic elements. A second angle is defined between an imaginary line running from the rack to the second magnetic element and the imaginary line running from the rack to said one of the two first magnetic elements neighboring the second magnetic element. The first angle and the second angle are different.12-15-2011
20120175251SPUTTERING APPARATUS - In one embodiment, a magnetron assembly comprises a plurality of magnets and a yoke configured to hold the plurality of magnets in at least four independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion. The outer portion substantially surrounds the perimeter of the inner portion. The magnets used to form the outer portion have a first polarity and the magnets used to form the inner portion having a second polarity. The outer portion of the pattern comprises a pair of elongated sections that are substantially parallel to one another. The outer portion of the pattern comprises a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections and wherein each turnaround section comprises a plurality of magnets having the first polarity. Other embodiments are described.07-12-2012
20120193226PHYSICAL VAPOR DEPOSITION SYSTEM - A steered arc physical vapor deposition (PVD) system includes an anode and a cathode. The cathode is a hollow cylindrical post cathode. A magnet is movably suspended within the cathode.08-02-2012
20120193227MAGNET ARRAY FOR A PHYSICAL VAPOR DEPOSITION SYSTEM - A magnet array for a steered arc physical vapor deposition system has multiple magnets sandwiched between two pole plates.08-02-2012
20130026036APPARATUS FOR TREATING SUBSTRATES - Apparatus for coating a substrate with a material in a chamber subject, during use, to substantial evacuation, which includes a coating station within the chamber for coating a substrate by sputtering and/or by evaporation; at least one treating station disposed in serial with the coating station and equipped with a plasma treater incorporating a plasma generator in sufficient proximity to the substrate to treat the substrate; a magnetic device for generating a magnetic field; at least one cylindrical electrode surrounding the magnetic device, the plasma treater incorporates a device for rotating the electrode about its longitudinal axis.01-31-2013
20130126347ARC DEPOSITION SOURCE HAVING A DEFINED ELECTRIC FIELD - The invention relates to an arc deposition device, comprising a cathode, an anode, as well as a voltage source for putting the anode at positive potential relative to the cathode. The device also comprises magnetic elements, which cause a magnetic field over the cathode surface, wherein the anode is arranged in the vicinity of the cathode in such a way that the magnetic field lines exiting from the cathode surface hit the anode.05-23-2013
20130270110HIGH DENSITY MICROWAVE PLASMA GENERATION APPARATUS, AND MAGNETRON SPUTTERING DEPOSITION SYSTEM USING THE SAME - A microwave plasma generation apparatus (10-17-2013
20140027278MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus for processing a substrate includes a target holding member for holding a target installed to face the substrate and a magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet, on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, and the horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss.01-30-2014
20140042023MAGNETRON DESIGN FOR EXTENDED TARGET LIFE IN RADIO FREQUENCY (RF) PLASMAS - Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity whilst extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.02-13-2014
20140054168APPARATUS FOR CYLINDRICAL MAGNETRON SPUTTERING - A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.02-27-2014
20140116878APPARATUS AND METHOD FOR SPUTTERING A TARGET USING A MAGNET UNIT - A sputtering apparatus and method are disclosed which can reduce deviations in the deposition thickness on the target object. The sputtering apparatus may include a chamber body and a targeting module. The targeting module may be positioned inside the chamber body and may include a source and at least one magnet unit, where the magnet unit may be configured to generate a magnetic field. Here, the magnet unit can be made to swing during a sputtering process.05-01-2014
20140238852CYLINDRICAL EVAPORATION SOURCE - Cylindrical evaporation source which includes, at an outer cylinder wall, target material to be evaporated as well as a first magnetic field source and a second magnetic field source which form at least a part of a magnet system and are arranged in an interior of the cylindrical evaporation source for generating a magnetic field. In this respect, first magnetic field source and second magnetic field source are provided at a carrier system such that a shape and/or a strength of the magnetic field can be set in a predefinable spatial region in accordance with a predefinable scheme. In embodiments, the carrier system is configured for setting the shape and/or strength of the magnetic field of the carrier system such that the first magnetic field source is arranged at a first carrier arm and is pivotable by a predefinable pivot angle (α08-28-2014
20140291148SPUTTERING APPARATUS - A sputtering apparatus includes a power application device configured to apply power to set a cathode body and a cathode magnet to an equipotential. The power to be applied to the cathode magnet is supplied via a spline arranged between the cathode body and a magnet rotating shaft attached to the cathode magnet.10-02-2014
20140305795Magnetron Plasma Apparatus - A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas.10-16-2014
20140332376SPUTTERING SYSTEM AND METHOD USING COUNTERWEIGHT - A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet.11-13-2014
20150014158MAGNETIC FIELD GENERATION APPARATUS AND SPUTTERING APPARATUS - Provided is a magnetic field generation apparatus including: two or more main magnetic pole portions configured to generate a main magnetic field; one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field; and a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions.01-15-2015
20150027883FACING TARGET SPUTTERING APPARATUS - A sputtering apparatus includes a plurality of targets arranged to face each other and a magnetic unit producing magnetic field. A space between the targets is disposed on a substrate on which a deposition is being made during a sputtering process. The magnetic unit includes at least two magnet members. The space between the targets is surrounded by a space between the at least two magnet members. Each of the magnet members includes at least one first magnet and at least one second magnet separated from each other with an interval.01-29-2015
20150122644ARC EVAPORATION SOURCE - Provided is an arc evaporation source equipped with a target, a ring-shaped magnetic field guide magnet and a back side magnetic field generation source. The magnetic field guide magnet is aligned in a direction perpendicular to the evaporation face of the target and has a polarity that is the magnetization direction facing forward or backward. The back side magnetic field generation source is disposed at the rear of the magnetic field guide magnet, which is at the side of the back side of the target, and forms magnetic force lines running in the direction of magnetization of the magnetic field guide magnet. The target is disposed such that the evaporation face is positioned in front of the magnetic field guide magnet.05-07-2015
20150136596MAGNETRON SPUTTERING DEVICE, MAGNETRON SPUTTERING METHOD, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region.05-21-2015
20150340211MAGNETIC-FIELD-GENERATING APPARATUS FOR MAGNETRON SPUTTERING - A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering comprising a straight portion and corner portions, which comprises, on a non-magnetic base, (a) a straight center magnetic pole member; (b) a peripheral magnetic pole member surrounding the center magnetic pole member; (c) pluralities of vertical permanent magnets arranged between the center magnetic pole member and the peripheral magnetic pole member, which are magnetized in a perpendicular direction to the target surface; and (d) pluralities of first and second horizontal permanent magnets arranged on both sides thereof, which are magnetized in parallel to a target surface; the magnetic poles of the first and second horizontal permanent magnets opposing the vertical permanent magnets being the same in polarity as those of the vertical permanent magnets opposing the target surface.11-26-2015
20160013035SYSTEM AND APPARATUS TO FACILITATE PHYSICAL VAPOR DEPOSITION TO MODIFY NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES01-14-2016
20160203961MAGNETRON SPUTTERING APPARATUS07-14-2016
204298170 Flux passes through target surface 25
20090032393Mirror Magnetron Plasma Source - A new and useful plasma source is provided, comprising at least one electrode connected to an alternating current power supply and disposed adjacent to a portion of a grounded substrate. The electrode has a center magnet that produces a magnetron plasma at the electrode when the electrode is biased negative by the alternating power supply, and a mirror plasma on the substrate when the electrode is biased positive by the alternating power supply.02-05-2009
20110005926MAGNETRON ASSEMBLY - A rotating magnetron assembly having a structure to reduce bearing degradation by substantially preventing the flow of current through the bearing using non-conductive materials or providing a low resistance current flow path or by allowing current to flow through the bearing in a way which prevents arcing between the various bearing components.01-13-2011
20110220494METHODS AND APPARATUS FOR MAGNETRON METALLIZATION FOR SEMICONDUCTOR FABRICATION - Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic strength between inner and outer pole pieces may be adjusted by a gap between inner or outer pole pieces and mounting plate. The apparatus may comprise a second magnet assembly that is used to modify the electromagnetic field created by the magnetron assembly for fabricating a semiconductor device. The second magnet assembly comprises electromagnet(s), permanent magnet(s), or ferrous materials. The apparatus may further comprise either DC, pulsed, or RF power supply for charging a sputtering target. The apparatus may comprise a plenum that is used to control the thermal behavior of the sputtering target and is separated from the magnetron assembly.09-15-2011
20120111724MAGNETIC CIRCUIT FOR SPUTTERING APPARATUS - The present invention provides a magnetic circuit for a magnetron sputtering apparatus, which produces arc-shaped magnetic field lines of high magnetic field strength over a target surface, and has an improved demagnetization resistance. The magnetic circuit includes: an inner magnet; an outer magnet having a magnetization direction opposite to that of the inner magnet, and surrounding the inner magnet; a horizontally magnetized magnet disposed between the inner and outer magnets, and magnetized in a direction perpendicular to those of the inner and outer magnets, and in a direction from the inner magnet to the outer magnet, or from the outer magnet to the inner magnet; and a yoke configured so that a magnetic flux passes through the yoke between the inner and outer magnets, in which a magnetic coercive force of the horizontally magnetized magnet is greater in a region closer to the target side than in a center of the magnet interior.05-10-2012
20120160672SPUTTERING APPARATUS - A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode.06-28-2012
20130146453INTERCHANGEABLE MAGNET PACK - A sputtering apparatus includes a template having cells. Removable inserts are disposed within the cells. The cells may be circular, triangular, square, diamond shaped, or hex shaped. The removable inserts may be magnetic or non-magnetic inserts. A cover is connected with a first side of the template. A yoke is connected with a second side of the template. The removable inserts are operable to customize or shape a magnetic field over a target. The yoke is operable to provide a return path for the magnetic field.06-13-2013
20130180851MAGNETIC FIELD GENERATOR, MAGNETRON CATHODE AND SPATTERING APPARATUS - A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.07-18-2013
20130299349MAGNETIC-FIELD-GENERATING APPARATUS FOR MAGNETRON SPUTTERING - A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering comprising a linear portion and corner portions, the linear portion comprising a magnetic base, a center permanent magnet disposed on its surface, and side permanent magnets disposed on both sides thereof with a gap; the center and side permanent magnets being vertically magnetized with opposite polarities; the corner portions comprising a non-magnetic base, a center magnetic pole member disposed on its surface, a semicircular or semi-polygonal, peripheral magnetic pole member, and plural permanent magnets arranged between both magnetic pole members with their magnetization directions in parallel to a target surface; and the magnetic poles of plural permanent magnets opposing the center magnetic pole member having the same polarity as those of the center permanent magnet opposing the target.11-14-2013
20140246314CONFIGURABLE VARIABLE POSITION CLOSED TRACK MAGNETRON - Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first base plate; a second base plate movable with respect to the first base plate between a first position and a second position; an outer magnetic pole in the shape of a loop and comprising an outer magnetic pole section coupled to the first base plate and an outer magnetic pole section coupled to the second base plate; and an inner magnetic pole disposed within the outer magnetic pole, wherein the outer and inner magnetic poles define a closed loop magnetic field, and wherein the closed loop magnetic field is maintained when the second base plate is disposed in both the first position and a second position.09-04-2014
204298180 Focusing target (e.g., conical target, plural inclined targets, etc.) 2
20100025237DEPOSITION APPARATUS FOR ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An embodiment of this document provides a deposition apparatus for an organic electroluminescent display device, comprising a vacuum chamber, a deposition source placed on a bottom within the vacuum chamber, a mask configured to mask a source generated by the deposition source, a target substrate on which the source passing through the mask is deposited, a first plate placed on an upper side within the vacuum chamber, wherein magnets are arranged with them being spaced apart from each other on one side of the first plate, and a second plate placed below the first plate, wherein grooves into which the respective magnets are inserted are formed in the second plate.02-04-2010
20100294658MAGNETRON SPUTTERING DEVICE HAVING ROTATABLE SUBSTRATE HOLDER - A magnetron sputtering device includes a target holder, a substrate holder, and a first driver. The target holder defines a sputtering space therein, and includes at least one target tray arranged at a periphery of the sputtering space. The substrate holder is rotatably positioned in the sputtering space. The first driver is connected to the substrate holder. The first driver is operable to rotate the substrate holder relative to the target holder.11-25-2010
204298190 Planar magnetron 8
20100018857SPUTTER CATHODE APPARATUS ALLOWING THICK MAGNETIC TARGETS - A sputtering apparatus allowing thick targets and method of making the same. The apparatus includes a sputtering target with a glow discharge plasma formed thereon during sputtering. The sputtering target is disposed in a plane, with a front of the plane defined as the side on which the glow discharge plasma is located during sputtering and a back of the plane defined as the opposite side. The sputtering apparatus also includes a magnetic circuit with an electrically floating center pole and an electrically floating outside pole. Both the center pole and outside pole are at least partially disposed on the front side of the plane defined by the sputtering target.01-28-2010
20100252427MAGNETRON SPUTTERING TARGET AND MAGNETRON SPUTTERING SYSTEM - A magnetron sputtering target comprises a magnetron device and a target positioned in a magnetic field of the magnetron device. The magnetron device comprises a metal plate, a plurality of first magnets and second magnets. A direction of the magnetic lines of the first magnets is opposite to that of the second magnets. The first magnets and the second magnets are embedded in the metal plate and arranged in a number of rows and columns. At least one first magnet is adjacent to a second magnet in one row, and at least one first magnet is adjacent to a second magnet in one column, therefore, there are magnetic lines in row direction and column direction exist in the magnetic field of the magnetron device.10-07-2010
20120160673MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.06-28-2012
20150107992SPUTTERING APPARATUS AND MAGNET UNIT - A sputtering apparatus comprises: a target holder; and a magnet unit of a rectangular shape having long and short sides. the magnet unit includes: a first magnet; a second magnet disposed surrounding the first magnet and magnetized in a different and opposite direction from a direction of magnetization of the first magnet, and a third magnet located at part between the first magnet and the second magnet in the short-side direction and at least at a center position between the first magnet and the second magnet, the third magnet being magnetized in the short-side direction. In the third magnet, a surface facing the second magnet has the same polarity as that of a surface of the second magnet on the target holder side, and a surface facing the first magnet has the same polarity as that of a surface of the first magnet on the target holder side.04-23-2015
204298200 Moving magnetic field or target 4
20080264783SPUTTERING TARGET FIXTURE - A method and apparatus for sputter deposition. The method including: providing a sputter target having a back surface and an exposed front surface; providing a source of magnetic field lines, the magnetic field lines extending through the sputter target from the back surface to the exposed front surface of the sputter target; providing one or more pole extenders between magnetic poles of the source of the magnetic field lines and the exposed front surface of the sputter target.10-30-2008
20100012487DRIVE END-BLOCK FOR A ROTATABLE MAGNETRON - A drive end block for a magnetron arrangement with a rotating target, comprises an end block housing having a rotatably mounted drive shaft. The drive shaft is arranged in the end block housing, accessible at an end from outside of the end block housing for connection to the rotating target, and adapted at its end inside the end block housing for introduction of a torque. An electric motor with a stator and a rotor for creating the torque is arranged inside the end block housing.01-21-2010
20120012458MAGNET ARRANGEMENT FOR A TARGET BACKING TUBE, TARGET BACKING TUBE INCLUDING THE SAME, CYLINDRICAL TARGET ASSEMBLY AND SPUTTERING SYSTEM - The disclosure relates to a magnet arrangement for a sputtering system, wherein the magnet arrangement is adapted for a rotatable target of a sputtering system and includes: a first magnet element extending along a first axis; a second magnet element being disposed around the first magnet element symmetrically to a first plane; wherein the second magnet element includes at least one magnet section intersecting the first plane; and wherein a magnetic axis of the at least one magnet section is inclined with respect to a second plane being orthogonal to the first axis. Further, the disclosure relates to a target backing tube for a rotatable target of a sputtering system, a cylindrical rotatable target for a sputtering system, and a sputtering01-19-2012
20180023189MAGNETIC-FIELD-GENERATING APPARATUS FOR MAGNETRON SPUTTERING01-25-2018
204298210 Cylindrical or curved magnetron target 6
20110108416MAGNETRON SPUTTER - A magnetron sputter comprises a carrier, a magnet assembly, at least a middle magnetic ring, a target and at least a conducting magnetic ring. The magnet assembly is disposed on a carrying surface of the carrier comprising a permanent magnet and an external magnetic ring. The middle magnetic ring is disposed between the permanent magnet and the external magnetic ring of the magnet assembly. The target is disposed above the magnet assembly having a first surface which faces the carrying surface. The conducting magnetic ring is disposed on the first surface.05-12-2011
20130168242MAGNETIC CORE FOR CYLINDRICAL MAGNETRON SPUTTERING TARGET - A magnetic core for cylindrical magnetron sputtering target includes a housing and a magnet array. The housing includes a mounting plate and a base. The magnet array is mounted in the mounting plate and is enclosed in the housing. The magnet array includes a plurality of magnet segments stacked end to end.07-04-2013
204298220 Moving magnetic field or target 4
20090078572MAGNETRON END-BLOCK WITH SHIELDED TARGET MOUNTING ASSEMBLY - A magnetron arrangement includes an end block, which has a target fastening device for rotatable coupling of a tubular target, a holding device for a magnet system arranged in the interior of the tubular target and a shield, which covers the end of a tubular target mounted in the target fastening device. An area of the shield covering the end of the tubular target is configured, so that an annular gap remaining between the target support tube and the shield, viewed from the outside, has at least one radially outward-leading section.03-26-2009
20110147209SUPPORTING DEVICE FOR A MAGNETRON ASSEMBLY WITH A ROTATABLE TARGET - A support device for a magnetron arrangement with a rotating target includes a housing with a drive shaft mounted to rotate in the housing. An end of the drive shaft accessible from outside of the housing connects to the rotating target and another end lies within the housing for introduction of a torque. An electric motor with a stator and a rotor is arranged within the housing to generate a torque.06-23-2011
20120073965MAGNET MOUNTING SYSTEM AND MAGNETRON SPUTTERING DEVICE HAVING SAME - A magnetron sputtering device includes a main body and a magnet mounting system for receiving magnets. The magnet mounting system comprises a first annular member, a second annular member coaxially encasing the first member, a third annular member coaxially encasing the second member, a first driving device connected to the first annular member, a second driving device connected to the second annular member, and a third driving device connected to the third annular member. The first driving device, the second driving device, and the third driving device are respectively configured for driving the first annular member, the second annular member, and the third annular member to move along an axis of the first annular member.03-29-2012
20130213805TARGET UTILIZATION IMPROVEMENT FOR ROTATABLE MAGNETRONS - Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material.08-22-2013

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