Entries |
Document | Title | Date |
20080257724 | Texture and grain size controlled hollow cathode magnetron targets and method of manufacture - The present invention relates to methods for improving deposited film uniformity and controlling the erosion of sputter targets. Improved methods for achieving predetermined microstructure orientation in copper hollow cathode magnetron (HCM) sputter targets and targets prepared by such methods are disclosed. | 10-23-2008 |
20080289958 | Novel Manufacturing Design and Processing Methods and Apparatus for Sputtering Targets - Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof | 11-27-2008 |
20080308416 | SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY - A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate. | 12-18-2008 |
20090045050 | SPUTTERING TARGET STRUCTURE - To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2×10 | 02-19-2009 |
20090127106 | MAGNET CHOIR DESIGN FOR TARGET MATERIAL EROSION - A magnetic choir layout capable of enabling material erosion from a target providing a substantially uniform wear pattern. | 05-21-2009 |
20090127107 | MAGNETRON SPUTTERING CATHODE MECHANISM - A magnetron sputtering cathode mechanism includes a backing plate, a target, at least one magnetic component and at least one magnet. The backing plate has a first surface and a second surface opposite to the first surface. The first surface has at least one positioning recess, and the target has a bombarded surface and a non-bombarded surface opposite to the bombarded surface. The non-bombarded surface contacts with the first surface and has at least one combining recess. The magnetic component is disposed between the backing plate and the target and has a combining portion and a positioning portion. The combining portion is positioned in the combining recess, and the positioning portion is received in the positioning recess. The magnet is disposed at the second surface. The magnetic component is attracted to the corresponding magnet so as to fix the target at the backing plate. | 05-21-2009 |
20090134020 | SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - There are provided a sputtering target and a process for producing a sputtering target. The sputtering target includes a first layer located on its side to be sputter treated and a second layer located on its side not to be sputter treated. The first and second layers are bonded to each other through a bonding interface between the first layer and the second layer. The sputtering target satisfying the following requirements X and Y:
| 05-28-2009 |
20090152108 | Target Arrangement - The invention relates to a target arrangement comprising a tubular-shaped carrier element and a hollow-cylindrical target having at least one target material, said target comprising at least one one-piece tube segment which at least partially surrounds the carrier element. Said carrier element and the tube segment are partially interconnected in a material fit by at least two plastically deformable compensating means. The invention also relates to a method for producing said type of target arrangement and a tubular segment. | 06-18-2009 |
20090205955 | METHOD OF MANUFACTURING A ROTATABLE SPUTTER TARGET - The invention relates to a method to manufacture a rotatable sputter target. The method comprises the steps of—providing a backing tube;—providing a target material on the backing tube by coiling at least one elongated member around the backing tube;—providing an outer material on top of the target material;—applying heat and/or pressure to the outer material and/or to the backing tube;—removing the outer material. | 08-20-2009 |
20090236221 | MAGNETRON SPUTTERING TARGET STRUCTURE AND APPARATUS HAVING THE SAME - An embodiment of the invention provides a magnetron sputtering target structure, comprising a transmission device, at least two transmission shafts, and a plurality of magnetic bars. The transmission device winds around the transmission shafts and thus forms a transmission structure, and the magnetic bars are disposed in parallel on the transmission device. | 09-24-2009 |
20090255808 | TARGET FOR EFFICIENT USE OF PRECIOUS DEPOSITION MATERIAL - Aspects comprise sputtering targets comprising a base material carrier provided with a recessed pattern, such as a looping trench, to receive a more precious material to be sputtered during deposition processes. The looping trench can have a cross-section of varying depth based on an expected variation in the magnetic field. The more precious material is provided at least in the trench, for example by hot pressing, and also can be pressed into a layer across an entirety of a surface of the carrier. During operation, the desired deposition of the precious material can occur from the trench area. Thus, a higher percentage of the precious material in the target is used, reducing inventory costs. The base material can be selected based on characteristics of the more precious material, and based on goals including reducing diffusion of base material into precious material and galvanic reactions. | 10-15-2009 |
20090277787 | ROTATABLE SPUTTER TARGET COMPRISING AN END-BLOCK WITH A LIQUID COOLANT SUPPLY SYSTEM - A tube target with an end block for supplying coolant to the tube target is provided. The end block comprises a rotatably mounted carrier shaft for holding and rotating the tube target; a connecting sleeve arranged in the carrier shaft; a sealing element for the tube target on its end facing the end block; a coolant inlet port in the interior of the tube target; and a coolant outlet port. The coolant outlet port is formed by at least one aperture in the sealing element. The aperture is located in the vicinity of the wall of the tube target, and eccentrically to the rotational axis of the tube target. | 11-12-2009 |
20100044222 | Sputtering target including magnetic field uniformity enhancing sputtering target backing tube - Certain example embodiments relate to sputtering target backing tube that are slightly ferromagnetic, thereby providing small-scale shunting that reduces the occurrence or magnitude of short-range magnetic field deviations during magnetron sputtering with cylindrical sputtering targets. For example, backing tube allows may be carefully optimized to be somewhat ferromagnetic, thereby enhancing the uniformity of the magnetic field generated by the magnet bar. In certain example embodiments, short range magnetic field deviations may be reduced to less than about 5% from average, more preferably less than about 2% from average, and still more preferably less than about 1% from average. Such short range magnetic field deviation reducing target backing tubes may be used in along with, or in place of, shims or shunts that address long range magnetic field deviations. | 02-25-2010 |
20100072061 | SPUTTERING APPARATUS FOR FORMING THIN FILM - A sputtering apparatus for forming a thin film includes a pair of facing polygonal prism target holders in which a target is placed on each surface which is parallel to a rotation axis of a rotatable polygonal prism body. A magnetic pole group which includes either a plurality of magnets or a magnet and a yoke is disposed on a back surface of the target, and the magnetic pole group includes magnets or yokes of different magnetic pole directions. | 03-25-2010 |
20100078321 | METHOD FOR ASSEMBLING AT LEAST TWO PLATES AND USE OF METHOD FOR PREPARING AN ION BEAM SPUTTERING ASSEMBLY - According to the method, | 04-01-2010 |
20100101946 | ROTATABLE SPUTTER TARGET BACKING CYLINDER, ROTATABLE SPUTTER TARGET, METHODS OF PRODUCING AND RESTORING A ROTATABLE SPUTTER TARGET, AND COATING INSTALLATION - A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder having a lateral surface, a middle part, a first end region and a second end region opposite to the first end region, wherein at least one of the first and the second end regions has a maximum outer diameter substantially equal to or less than an outer diameter of the middle part. | 04-29-2010 |
20100126854 | SPUTTERING TARGET - Embodiments of the present invention generally include a sputtering target capable of substantially reducing the amount of wasted material associated with conventional sputtering targets. In one embodiment, the sputtering target includes a fluidized bed of sputtering material that constantly maintains a planar sputtering surface throughout the sputtering process. In one embodiment, the fluidized bed of sputtering material is either periodically or constantly supplied with sputtering material to both maintain a planar sputtering surface and reduce downtime of the sputtering equipment. | 05-27-2010 |
20100126855 | ENDBLOCK FOR A MAGNETRON DEVICE WITH A ROTATABLE TARGET - To achieve an improved end block, in which heating by induction eddy currents, which may occur during AC sputtering, for example, is significantly reduced relative to known end blocks, an end block for a magnetron configuration having a rotating target comprises an end block housing having an attachment surface for attaching the end block on a support apparatus, a pivot bearing for rotatable mounting of the rotating target, and at least one current conduction apparatus which conducts current through the end block housing in operation of the end block. The end block housing is implemented so that each current path in the end block housing which encloses the current conduction apparatus has an interruption at at least one point. | 05-27-2010 |
20100213053 | SPUTTER-COATING APPARATUS - A sputter-coating apparatus is configured for forming coatings on a plurality of workpieces, and includes a deposition chamber defining a cavity, a plurality of targets received in the cavity, and a plurality of supporting assemblies. Each target includes a first target plate and an opposite second target plate. The supporting assemblies are received in the cavity and arranged between the first target plates and the second target plates. Each supporting assembly includes a hollow rotating post for rotating about a first axis substantially parallel to a lengthwise direction thereof, at least one support extending from the post, and at least one driving unit. Each support includes a connecting arm rotatably connected to the post and a fixing portion attached to the connecting arm for supporting a workpiece. The driving unit is configured for driving each connecting arm to rotate relative to the corresponding post about a second axis. | 08-26-2010 |
20100230282 | Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering, and Magnetron Sputtering System - A magnet structure and the like are provided, which can reduce the labor required to make a magnet design for producing a tunnel-shaped leakage magnetic field for plasma confinement in a well-balanced manner over an obverse surface of a target, based on a quadridirectional magnetic field produced by magnetic interaction between plural magnets. The magnet structure ( | 09-16-2010 |
20110005924 | TARGET BACKING TUBE, CYLINDRICAL TARGET, AND CYLINDRICAL TARGET ASSEMBLY - A target backing tube is described. The target backing tube is for a rotatable target and includes a tube adapted for one or more non-bonded target cylinders to be disposed around the tube, the tube having an exterior surface adapted to face the at least one target cylinder and at least three or more protrusion receiving positions; and protrusions mounted on the exterior surface of the tube at each of the protrusion receiving positions for centering the target cylinders. | 01-13-2011 |
20110048935 | Sputtering Target with Low Generation of Particles - Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 μm or less, a ten-point average roughness Rz is 0.4 μm or less, a distance between local peaks (roughness motif) AR is 120 μm or less, and an average length of waviness motif AW is 1500 μm or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof. | 03-03-2011 |
20110062020 | Rotary Target Assembly and Rotary Target - A rotary target assembly has a cylindrical target and a cylindrical backing tube. A difference between an inner diameter of the cylindrical target and an outer diameter of the cylindrical backing tube substantially equals a yield strain of a target material multiplied by the inner diameter of the cylindrical target and multiplied by N, wherein N is between 1 and 10. The difference can be adjusted according to the target material, dimension of the cylindrical target, so the cylindrical target can be combined tightly with cylindrical backing tube. A resulting rotary target of the present invention has improved thermal and electrical conductivities. | 03-17-2011 |
20110062021 | SPUTTER-COATING APPARATUS - A sputter-coating apparatus for coating a plurality of workpieces includes a deposition case defining a cavity, a supporting assembly received in the cavity, and a target assembly received in the cavity and extending through the supporting assembly to face the workpieces. The supporting assembly includes a plurality of supporting members. Each supporting member includes a body and a plurality of adjusting units extending through the body. Each adjusting unit includes a supporting pole fixed to the body, a first fixing pole and a second fixing pole fixedly connected to the supporting pole and radially extending from the supporting pole, a first threaded pole and a second threaded pole retractably connected to the supporting pole and radially extending from the supporting pole, and a driving member received in the supporting pole for driving the first threaded pole and the second threaded pole to retract relative to the supporting pole. | 03-17-2011 |
20110062022 | ROTATABLE SPUTTERING MAGNETRON WITH HIGH STIFFNESS - A sputtering magnetron ( | 03-17-2011 |
20110132756 | SPUTTERING DEVICE - A sputtering device includes a housing and a transporting mechanism. The housing defines a sputtering chamber. The transporting mechanism includes a first drive gear, a second drive gear adjacent to the first drive gear, a driving track, a transporting belt, a plurality of slave gears and a plurality of hanging poles. The driving track includes a first track surrounding the first drive gear, a second track surrounding the second drive gear, and a first connection track connecting the first track to the second track. The transporting belt is movably arranged on the driving track. The slave gears are pivotably connected to the transporting belt. The hanging poles are mounted on the salve gears and are configured for hanging the workpieces. | 06-09-2011 |
20110139613 | REPELLER STRUCTURE AND ION SOURCE - A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole. | 06-16-2011 |
20110139614 | SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET - A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target. | 06-16-2011 |
20110168555 | ROTARY SPUTTERING TARGET AND APPARATUS FOR MANUFACTURE - The process that is the subject of this invention is a method of making a rotary sputtering target having the steps of providing a cylinder of sputtering target material having an adhesion-wetting layer on its inside surface; providing a stainless steel sputtering target backing tube having an outside diameter smaller than the sputtering target material inside diameter, the backing tube having an adhesion-wetting layer on its outside surface; welding an upper and lower stainless steel retaining ring to the backing tube adjacent to the sputtering target material so that the target material is in compression and the backing tube in tension; and introducing molten bonding material into the annulus between the backing tube and the sputtering target material. | 07-14-2011 |
20110203920 | TARGET SHAPING - A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target. | 08-25-2011 |
20110240467 | CYLINDRICAL SPUTTERING TARGET, AND METHOD FOR MANUFACTURING SAME - Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials. | 10-06-2011 |
20120006680 | ROTARY TARGET BACKING TUBE BONDING ASSEMBLY - A rotary sputtering target bonded to a backing tube such that the bonding material is applied only proximate the ends of the rotary sputtering target and is also between the target and the backing tube to form a gap between the rotary sputtering target and the backing tube and a device for bonding a rotary sputtering target to a backing tube. | 01-12-2012 |
20120037500 | HOLLOW TARGET ASSEMBLY - A hollow target assembly has a support tube, a target body and a plurality of elastic elements. The target body includes a plurality of hollow target materials and they pass through the support tube sequentially and locate at the outer surface of the support tube. By the grooves formed and extended from an end of the inside wall of the hollow target material and the corresponding concaves formed at the outside wall of the support tube, the elastic elements can lean and be positioned in the space generated by the grooves and corresponding concaves. Therefore, the target body and the support tube are brought together closely by these elastic elements in a simple and a low-cost way. | 02-16-2012 |
20120097534 | MAGNETRON SPUTTERING CATHODE AND FILM FORMATION APPARATUS - A magnetron sputtering cathode includes: a yoke; a magnetic circuit having a central magnet portion, a peripheral edge magnet portion, an auxiliary magnet portion, and a parallel area; and a backing plate. The central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are disposed so that polarities of tip portions of the central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are different from each other at portions between adjacent magnet portions. The magnetic field profile observed from above of the backing plate and the magnetic flux density in a horizontal direction are determined so that the magnetic flux density in a first area is a positive value and the magnetic flux density in a second area is a negative value with respect to a position corresponding to the central magnet portion as a boundary. | 04-26-2012 |
20120103803 | TUBE TARGET - The invention relates to a tube target ( | 05-03-2012 |
20120125766 | Magnetron with non-equipotential cathode - In accordance with one embodiment of the present invention, a Magnetron Sputtering System consists of a Non-Equipotential Cathode with two or more group of segments made of one or different materials. Each group of segments is electrically insulated from others. At group or groups of segments called as Low-Voltage there is maintained a self-established electric voltage relating to anode that is less than voltages are maintained at remained cathode-target groups of segments called as High-Voltage. Such a Magnetron Sputtering System with a Non-Equipotential cathode makes possible to regulate energy of ions bombarding the cathode parts to control and substantially increase a local productivity of a Magnetron Sputtering System without increasing a discharge current and without change of magnetic field and pressure. Existing Magnetron Sputtering Systems can be adapted for application with this method. | 05-24-2012 |
20120132523 | Method of Manufacturing a Sputtering Target and Sputtering Target - [Object] To provide a method of manufacturing a sputtering target and a sputtering target that are capable of achieving refinement and uniformity of crystal grains. | 05-31-2012 |
20120152737 | LOADING DEVICE AND SPUTTERING DEVICE USING SAME - A sputtering device includes a hollow main body, a loading device, and a driving device received in the main body. The main body includes a top plate and a bottom plate opposite to the top plate. The loading device includes a supporting base rotatably positioned on the bottom plate, a ring-shaped frame positioned on the top plate, and a number of rods. The ring-shaped frame is coaxial with the supporting base and includes a number of assembly plates connecting to each other in sequence. The rods are positioned on the supporting base along the circumference thereof, and substantially perpendicularly connect between the ring-shaped frame and the supporting base along the axis of the supporting base. The driving device connects to the supporting base and the rods, and drives the supporting base and driving the rods to rotate. | 06-21-2012 |
20120152738 | MAGNETRON ARRANGEMENT WITH A HOLLOW TARGET - A magnetron arrangement includes a hollow target and a magnet system arranged in the hollow target with a magnet carrier and a magnet arrangement fitted on the magnet carrier. The magnet carrier includes at least two magnet carrier elements, which each have at least one cavity and each have at least one contact face on an outer side. The at least two magnet carrier elements are in touching contact with their contact faces and are fixedly connected to one another, and the cavities of the magnet carrier elements have no connection between them. | 06-21-2012 |
20120175250 | Target Cooling Through Gun Drilled Holes - A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths. | 07-12-2012 |
20120199476 | Production of Nanoparticles - An apparatus for the production of nanoparticles comprises a chamber, a magnetron located within the chamber and comprising a cylindrical target having at least an outer face of the material to be deposited and a hollow interior, a source of magnetic flux within the hollow interior arranged to present magnetic poles in a direction that is radially outward with respect to the cylindrical target, and a drive arrangement for imparting a relative motion in an axial direction to the target and the source of magnetic flux, the chamber having at least one aperture and being located within a volume of relatively lower gas pressure compared to the interior of the chamber. The chamber is preferably substantially cylindrical, and is ideally substantially co-axial with the target so as to offer a symmetrical arrangement. | 08-09-2012 |
20120222956 | METHOD AND APPARATUS FOR FORMING A CYLINDRICAL TARGET ASSEMBLY - Embodiments of the present invention generally comprise a method and apparatus for preparing and bonding a cylindrical sputtering target tube to a backing tube to form a rotary target assembly. In one embodiment, a cylindrical target assembly includes bonding material that has a cylindrical surface and is substantially concentric to the backing tube. In one embodiment, a method for forming a cylindrical target assembly includes filling a gap defined between sputtering target tubes with a spacer. The method also includes removing the spacer after the sputtering target tubes are bonded to a backing tube. In one embodiment, an apparatus for fabricating a cylindrical target assembly comprises of a support tube, two end fittings, and a plurality of clamp elements operable to clamp the support tube between the two end fittings. | 09-06-2012 |
20120273347 | SPUTTERING TARGET WITH REDUCED PARTICLE GENERATION AND METHOD OF PRODUCING SAID TARGET - Provided is a sputtering target with reduced particle generation having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, and in which the area ratio of defects on the target surface is 0.5% or less, as well as a method of producing such a sputtering target. Additionally provided are a sputtering target wherein the target surface, which contains large amounts of substances without ductility, is improved, and whereby the generation of nodules and particles during sputtering can be prevented or inhibited, and a surface finishing method thereof. | 11-01-2012 |
20130026035 | SPUTTER DEVICE - A sputter device including a plurality of targets having magnetism; a reflector having magnetism and arranged between neighboring targets of the plurality of targets; a wave guide having magnetism and arranged adjacent the targets, the wave guide forming a guide space for guiding microwaves; and a limiter having magnetism and arranged adjacent the wave guide, the limiter forming an electron cyclotron resonance area together with the targets, the reflector, and the wave guide. | 01-31-2013 |
20130032476 | ROTARY CATHODES FOR MAGNETRON SPUTTERING SYSTEM - A magnetron sputtering device includes a cathode source assembly, and a target assembly removably coupled to the cathode source assembly. The cathode source assembly comprises a rotatable drive shaft, and a water feed tube located in the drive shaft and coupled to a tube support. The target assembly comprises a rotary cathode including a rotatable target cylinder, the rotary cathode removably mounted to the drive shaft. A magnet bar inside of the target cylinder is coupled to an end portion of the feed tube. A sweeping mechanism coupled to the magnet bar includes a control motor. An indexing pulley is coupled to the control motor, and a magnet bar pulley is coupled to the indexing pulley. The magnet bar pulley is affixed to the tube support such that any motion of the magnet bar pulley is translated to the magnet bar through the tube support and the feed tube. | 02-07-2013 |
20130037407 | In-Line Metallizer Assemblies and Part-Coating Conveyor Systems Incorporating The Same - In-line metalizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metalized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metalized one or more parts to the conveyor system. | 02-14-2013 |
20130056352 | MEDIUM FREQUENCY MAGNETRON SPUTTERING DEVICE - A medium frequency magnetron sputtering device comprises a vacuum chamber, a rotary rack located in the center of the vacuum chamber, a pair of targets located between the inner wall of the vacuum chamber and the rotary rack, an inner partition, and at least one outer partition. The inner partition is located between the inner wall of the vacuum chamber and the pair of targets, the at least one outer partition is moveable and prevents the deposition of any sputtered target atoms on the rotary rack during the cleaning target process. | 03-07-2013 |
20130092533 | SPUTTER DEPOSITION APPARATUS - A sputter deposition apparatus can sputter a wider surface area of a sputtering surface of a target in comparison to an area that could be sputtered by a conventional apparatus. An adhesion-preventing member surrounding the outer periphery of a sputtering surface of a target made of a metal material is formed by insulating ceramic. The target is sputtered while moving a magnet device between a position where the entire outer periphery of an outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and another position where a part of the outer periphery of the outer peripheral magnet protrudes out to the outside of the outer periphery of the sputtering surface. | 04-18-2013 |
20130112554 | DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing. | 05-09-2013 |
20130126343 | SPUTTER TARGET STRUCTURE OF TRANSPARENT CONDUCTIVE LAYER - The present invention discloses a sputter target structure of a transparent conductive layer, which comprises a middle plate potion, two short-edge thickness-variation end portions, and two long-edge thickness-variation end portions. The thickness of the short-edge thickness-variation end portion is larger than the thickness of the middle plate potion; the thickness of the long-edge thickness-variation end portion is smaller than the thickness of the middle plate potion. Furthermore, the short-edge thickness-variation end portion has an end surface of non-planer shape. The sputter target structure of the transparent conductive layer of the present invention is designed with different thickness variation projects in the different portions according to an actual consumption situation of a sputter target, so that it can decrease a waste of material of the sputter target during operation process, so as to save a cost of the transparent conductive layer. | 05-23-2013 |
20130140173 | ROTARY SPUTTER TARGET ASSEMBLY - This invention utilizes a co-extrusion or co-drawing process to directly bond a tubular target to an inner backing tube. The co-extrusion or co-drawing process reduces the inner and outer diameters of the outer tubular target to cause portions of the target to protrude and at least partially fill into grooves along the inner backing tube. The filling causes the target to interlock to the backing plate. | 06-06-2013 |
20130161188 | Method for Bonding Components of a Sputtering Target, a Bonded Assembly of Sputtering Target Components and the Use Thereof - The invention describes a method for bonding components of a sputtering target, comprising the following steps: providing a first component and a second component, the harder of which has undercut protrusions; positioning them against each other; and pressing them towards each other resulting in a plastic deformation of the material of at least one of the two components, filling the undercuts thereby creating interlocking, as well as the bonded assembly so created, and its recycling. No step creating bonding other than interlocking on a major part of the bonded surface area is necessary. | 06-27-2013 |
20130186752 | TARGET DEVICE, SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING A TARGET DEVICE - To provide a target device that can easily be reused in which the amount of gas discharge is small. The present invention is a target device including a backing plate and a target plate that is fixed to the backing plate with a metal brazing material, in which a protective film made of a TiN thin film in which a proportion of (111) plane is at a maximum is formed on an exposed portion of the backing plate. The discharge amount of gas is small, and the brazing material that adheres when fixing the target plate can be easily peeled off. | 07-25-2013 |
20130199929 | COATING SOURCE AND PROCESS FOR THE PRODUCTION THEREOF - A coating source for physical vapor deposition has at least one component, which has been produced from at least one pulverulent starting material in a powder metallurgy production process and at least one ferromagnetic region embedded in the component. The at least one ferromagnetic region, is introduced into the component and fixedly connected to the component during the powder metallurgy production process. | 08-08-2013 |
20130206589 | Sputtering Target Having Alarm Function - The present invention provides a sputtering target having alarm function. The sputtering target comprises: a target body including a target material and having a bonding plane; a backing body bonded with the bonding plane of the target body; and at least one alarm body embedded in the target body. Wherein, a length of each alarm body, ratios of an area of each alarm body and the sum of area(s) of the at least one alarm body projected onto the bonding plane relative to an area of the bonding plane are controlled in a suitable range. Thus, the bonding strength and the heat-removing efficiency of the sputtering target can be maintained, and the distinguishable material of the alarm body can evolve a gas component distinguishable from a sputtering environment serving as an alarm signal for stopping the sputtering process in time. | 08-15-2013 |
20130213801 | SINTERED BODY, SPUTTERING TARGET AND MOLDING DIE, AND PROCESS FOR PRODUCING SINTERED BODY EMPLOYING THE SAME - Provided is an apparatus that includes a molding die for producing a sintered body. The molding die is configured for cold isostatic pressing and includes a knockdown mold frame comprised of plural frame members and a bottom plate provided in contact with the knockdown mold frame. An upper punch is provided to be movable along the inner surface of the knockdown mold frame. The frame members configured to be movable relative to each other to accommodate an expansion of a green body which takes place at the time of reducing the pressure after the completion of pressing. | 08-22-2013 |
20130299346 | SPUTTERING DEVICE WITH A TUBULAR TARGET - A sputtering device with a tubular target, includes a holding device with a supporting shaft having a shaft flange connected to the target tube detachably and in a water-tight manner by a clamping device. The end of the target tube facing the shaft flange of the supporting shaft is flangeless and a spacer ring is arranged detachably on the outer side of the tube in a predetermined position. The spacer ring is held by a form-fitting connection at a minimum distance from the end of the target tube. The clamping device includes the shaft flange of the supporting shaft, the spacer ring and a clamping ring which engages over the shaft flange and the spacer ring and comprises at least two pieces. At least one sealing element is arranged between the outer side and/or the end side of the target tube, and an opposite sealing face of the shaft flange. | 11-14-2013 |
20140061041 | TARGET CENTER POSITIONAL CONSTRAINT FOR PHYSICAL VAPOR DEPOSITION (PVD) PROCESSING SYSTEMS - Target assemblies for use in a substrate processing system are provided herein. In some embodiments, a target assembly for use in a substrate processing system may include a source material, a backing plate configured to support the source material on a front side of the backing plate, and a central support member to support the target assembly within the substrate processing system, wherein the central support member is coupled to a center portion of the backing plate and extends perpendicularly away from the backside of the backing plate. | 03-06-2014 |
20140102890 | SPUTTERING APPARATUS - A sputtering apparatus includes a substrate, a sputtering target disposed to face the substrate and formed of a sputtering material to be deposited on the substrate, wherein the sputtering target collides with an ionized gas particle and the sputtering material is separated from the sputtering target by the collision of the ionized gas particle with the sputtering target is deposited on the substrate, a supporter that supports a lower surface and a side surface of the sputtering target, and an insulating cover that covers an upper surface of the supporter supporting the side surface of the sputtering target. The insulating cover includes a plurality of recesses recessed downwardly from an upper surface of the insulating cover and a plurality of protrusions protruding upwardly between the recesses. | 04-17-2014 |
20140158531 | SPUTTERING APPARATUS - A sputtering apparatus includes a sputtering unit, an unwinding unit, a winding unit, and a fixing frame. The sputtering unit forms a layer on a sheet. The unwinding unit continuously supplies the sheet to the sputtering unit. The winding unit continuously receives the sheet from the sputtering unit. The sputtering unit includes a first target, a second target, and a magnetic field generator. The second target is spaced apart from the first target in a first direction. The first target and the second target are facing each other. The magnetic field generator is disposed behind each of the first target and the second target. The fixing frame surrounds a space between the first target and the second target. The fixing frame rotates about an axis extending in the first direction. | 06-12-2014 |
20140291146 | SPUTTERING APPARATUS - A sputtering apparatus capable of effectively reducing damage of a target in a sputtering process includes a first magnet assembly extending in a first direction and having a first side surface and a second side surface extending in the first direction, which correspond to each other, and has a first bottom surface extending in the first direction, which connects the first and second side surfaces; a first shield on the first side surface of the first magnet assembly; and a first supporter for supporting a first end and a second end of a first cylindrical tubular target, the first cylindrical tubular target having a first longitudinal axis parallel to the first direction, the first cylindrical tubular target accommodating the first magnet assembly and the first shield. | 10-02-2014 |
20140318953 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR - A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10 | 10-30-2014 |
20140367251 | SINTERING APPARATUS, METHOD OF MANUFACTURING SINTERED COMPACT, AND TARGET MATERIAL - A sintering apparatus includes: a non-transportable section mounted in the atmosphere; a transportable section that has a mold capable of accommodating a material to be processed and is loaded detachably with respect to the non-transportable section; and a covering member that envelops the transportable section loaded on the non-transportable section in an almost hermetically sealed state and allows the transportable section to be separated from the non-transportable section with the transportable section enveloped in the almost hermetically sealed state. | 12-18-2014 |
20140367252 | Sputtering Target Assembly - Provided is a sputtering target assembly comprising two or more sputtering target-backing plate bonded bodies B aligned in the width direction, wherein the sputtering target-backing plate bonded bodies B each include a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more and composed of three or more target pieces A being divided such that the dividing lines lie in the circumferential direction and being bonded or placed onto a cylindrical or columnar backing plate, wherein the bonded bodies B are arranged to form the sputtering target assembly in such a manner that the dividing lines between the three target pieces of one bonded body B are not present at the same positions of the dividing lines between fractional target pieces of adjacent another bonded body B. It is an object of the present invention to provide a sputtering target assembly that can reduce defects due to occurrence of particles originated from the piece-bonding area. | 12-18-2014 |
20150075982 | SOURCE MAGNET FOR IMPROVED RESPUTTERING UNIFORMITY IN DIRECT CURRENT (DC) PHYSICAL VAPOR DEPOSITION (PVD) PROCESSES - A magnetic field forming apparatus includes a support member having a first side and a second side coupling a first end to a second end and an axis of rotation between the first end and the second end; a first body coupled to the first end of the support member and extending away from the first side of the support member, wherein the first body has a plurality of first magnets coupled to a bottom of the first body; a second body rotatably coupled to the second end of the support member and extending away from the second side of the support member, wherein the second body has a plurality of second magnets coupled to a bottom of the second body, wherein the plurality of the first magnets are disposed about 180 degrees from the plurality of second magnets with respect to the axis of rotation of the support member. | 03-19-2015 |
20150101927 | SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF - Disclosed is a sputtering apparatus having a target ( | 04-16-2015 |
20150129421 | HYBRID DEPOSITION SYSTEM - A hybrid deposition system includes a chamber, a pump, a gas source, a cathodic arc source, a high power impulse magnetron sputtering source and a substrate. The pump is connected with an interior of the chamber for changing a pressure of the interior of the chamber. The gas source is connected with the interior of the chamber for providing a gas into the interior of the chamber. The cathodic arc source is connected with the chamber and includes a first target disposed in the interior of the chamber. The high power impulse magnetron sputtering source is connected with the chamber and includes a second target disposed in the interior of the chamber. The substrate is disposed in the interior of the chamber and corresponded to the first target and the second target. | 05-14-2015 |
20160099134 | ARC EVAPORATION COATING SOURCE HAVING A PERMANENT MAGNET - An arc evaporation coating source includes a target made of a coating material to be vapor-deposited, a ferromagnetic yoke for influencing the vapor deposition of the coating material to be vapor-deposited and at least one permanent-magnetic body for influencing the vapor deposition of the coating material to be vapor-deposited. The ferromagnetic yoke is disposed in contact with the target. The permanent-magnetic body is fastened to the target by the ferromagnetic yoke. | 04-07-2016 |
20160111265 | END BLOCK ARRANGEMENT AND SOCKET ARRANGEMENT - According to various embodiments, a socket arrangement for holding an end block on a process chamber may include the following: a first socket element with a first fastening arrangement for fastening the first socket element on a process chamber wall and with a second fastening arrangement; and a second socket element with a third fastening arrangement, for fastening the second socket element on the first socket element and with a fourth fastening arrangement for fastening an end block on the second socket element; wherein the second fastening arrangement of the first socket element and the third fastening arrangement of the second socket element may be formed for engaging in one another with play in such a way that the second socket element may be deflectable in relation to the first socket element. | 04-21-2016 |