Class / Patent application number | Description | Number of patent applications / Date published |
204298110 | Specified mask, shield or shutter | 67 |
20080289957 | Vacuum Film Forming Apparatus - A vacuum film forming apparatus is provided that is intended to use a portion of its cylindrical member as a target and moreover have an additional function of plasma polymerization using the cylindrical member. | 11-27-2008 |
20080314743 | Shadow mask - Provided is a shadow mask including a substrate; a mask that is formed to have an opening for transferring a thin film onto the substrate in a desired shape; and a delamination-preventing polymer layer formed on the mask. | 12-25-2008 |
20090166195 | SPUTTERING APPARATUS - A sputtering apparatus to form a film on a substrate includes an electrode arranged in a vacuum chamber and having a placing surface to place a target on it, a stationary portion provided on the peripheral portion of the placing surface, a shutter mechanism to shield in the vacuum chamber the target placed on the placing surface, and a moving mechanism which sets in the vacuum chamber the shutter mechanism at a predetermined position. Of the stationary portion and the movable portion of the shutter mechanism, one is provided with a recess and the other one is provided with a projection. When the moving mechanism sets the shutter mechanism at a position close to the stationary portion, the projection is inserted in the recess. | 07-02-2009 |
20090260982 | WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS - Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support. | 10-22-2009 |
20090272647 | PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region. | 11-05-2009 |
20090308739 | WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS - Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region. | 12-17-2009 |
20100006429 | SPUTTERING APPARATUS AND MANUFACTURING APPARATUS FOR LIQUID CRYSTAL DEVICE - A sputtering apparatus includes: a film forming chamber that houses a substrate hold so as to be capable of being carried in a horizontal direction; a sputtered particle ejecting section that includes an upper target and a lower target that are disposed so as to face each other and oblique to the substrate, and an opening, and in which sputtered particles are generated from a pair of the targets by plasma, and the sputtered particles are ejected from the opening to the substrate carried from a side adjacent to the upper target to another side adjacent to the lower target; and a slit member that has a slit through which the sputtered particles are selectively passed, and is disposed between the substrate and the sputtered particle ejecting section. The slit member is disposed so that a slit open end of the slit is positioned within 50 mm from an upstream open end of the opening of the sputtered particle ejecting section, and the slit open end is positioned at an upstream side in a carrying direction of the substrate. | 01-14-2010 |
20100032291 | Device for Surface Treatment of Workpieces - A device for surface treatment, in particular galvanic surface treatment, of workpieces, including at least one reactor housing, having at least one process chamber and being coverable by a cover, and a screen element which is spatially connected to the process chamber, and which has at least one receptacle for a workpiece to be treated, a fixing element having a smaller thermal expansion coefficient being situated between the reactor housing and the screen element, which defines their relationship relative to each other. | 02-11-2010 |
20100059368 | MAGNETRON SPUTTERING APPARATUS - Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet. | 03-11-2010 |
20100181192 | ANODE FOR PRODUCING A PLASMA BY WAY OF ELECTRIC ARC DISCHARGES - The invention relates to an anode for the formation of plasma by means of the development of electric arc discharges starting from a target connected as cathode for coating of substrates with target material in a vacuum. It is an object of the invention to propose a possibility by means of which the coating rate at least can be increased without substantially increasing the effort related to plant engineering required for this. The anode according to the invention for the plasma formation by means of the development of electric arc discharges starting from a target connected as cathode is then disposed in a known manner in a distance to the target. At the same time, anode bars are present initially disposed in parallel to the surface of the targets on the anode. In addition, strip-shaped elements being separated from each other by gaps are formed on the anode. Then, the strip-shaped elements start from the anode bars and face in the direction of a substrate to be coated on the surface. As a result, the formed plasma is enclosed with the strip-shaped elements of the anode from two opposing sides. | 07-22-2010 |
20100224486 | Dynamic Film Thickness Control System/Method and its Utilization - A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed. | 09-09-2010 |
20100243438 | SPUTTERING APPARATUS - A sputtering apparatus includes a target holder which is placed in a vacuum vessel and can hold a target configured to deposit a film on a substrate, a substrate holder which can mount the substrate, a first shield member which is disposed in a vicinity of the substrate holder, and configured to form a closed state in which the substrate holder and the target holder are shielded from each other, or an open state in which the substrate holder and the target holder are opened to each other, a first opening/closing driving unit adapted to open/close the first shield member to enter the open state or the closed state, a second shield member, having an annular-shaped, disposed on the surface of the substrate holder and an outer peripheral portion of the substrate, and a driving unit adapted to move the substrate holder in order to bring the substrate holder, on which the second shield member is disposed, close to the first shield member in the closed state. The first shield member has at least one annular-shaped, first protruding portion formed on it to extend in the direction of the second shield member. The second shield member has at least one annular-shaped, second protruding portion formed on it to extend in the direction of the first shield member. The first protruding portion and the second protruding portion fit together in a non-contact state at the position up to which the driving unit brings the substrate holder close to the first shield member. | 09-30-2010 |
20100294656 | PLASMA PROCESSING APPARATUS - A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode. | 11-25-2010 |
20110005923 | SPUTTERING SYSTEM, ROTATABLE CYLINDRICAL TARGET ASSEMBLY, BACKING TUBE, TARGET ELEMENT AND COOLING SHIELD - The application concerns a target backing tube for a rotatable cylindrical target assembly comprising: a tube for at least one target element to be disposed there around, wherein the tube has an exterior surface adapted to face the at least one target element, wherein a portion of the exterior surface of the tube has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the exterior surface of the tube. Further, the application concerns a cooling shield for a sputtering system comprising a rotatable target, the cooling shield has an interior surface adapted to face a target element of a sputtering system and an exterior surface; wherein a portion of the interior surface of the cooling shield has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the interior surface of the cooling shield. Additionally, the application concerns a target element for a rotatable cylindrical target assembly of a sputtering system, wherein the target element an interior surface adapted to face a target backing tube onto which the target cylinder is adapted to be disposed and exterior surface, wherein a portion of the interior surface of the target element has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the interior surface of the target element. | 01-13-2011 |
20110036709 | PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region. | 02-17-2011 |
20110042209 | SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF - Disclosed is a sputtering device wherein a target ( | 02-24-2011 |
20110168554 | APPARATUS FOR TREATMENT OF SAMPLES FOR AUGER ELECTRONIC SPECTROMETER (AES) IN THE MANUFACTURE OF INTEGRATED CIRCUITS - An apparatus for treatment of a sample for the manufacture of integrated circuits includes a holder apparatus and a stage which is coupled to the holder apparatus. The stage is capable of holding a portion of a sample to be analyzed. The apparatus also includes a shield that is operably coupled to the stage to block a portion of the sample. The shield is capable of movement relative to the sample to block one or more portions of the sample. The shield is provided on a track member and is movable from a first spatial location to a second spatial location on the track member. The apparatus further includes an enclosure surrounding an entirety of the sample and the shield. | 07-14-2011 |
20110186426 | ADJUSTABLE PROCESS SPACING, CENTERING, AND IMPROVED GAS CONDUCTANCE - Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life. | 08-04-2011 |
20110220493 | MASKING MATERIAL, PIEZOELECTRIC VIBRATOR, METHOD OF MANUFACTURING PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC APPARATUS, AND RADIO-CONTROLLED TIMEPIECE - Provided are a masking material capable of suppressing the occurrence of pattern blurring when forming a pattern on a substrate by a sputtering method, a piezoelectric vibrator using the masking material, a method of manufacturing the piezoelectric vibrator, and an oscillator, an electronic device, and a radio-controlled timepiece each having the piezoelectric vibrator. A masking material which is used when forming a pattern on a substrate by a sputtering method includes openings corresponding to the pattern, and portions where the openings are not formed have a uniform thickness. | 09-15-2011 |
20110278165 | PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION - Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber. | 11-17-2011 |
20120073963 | SPUTTERING APPARATUS HAVING SHIELDING DEVICE - An exemplary sputtering apparatus includes a deposition chamber, a anode support, a cathode support, and a shield device all received in the deposition chamber. The anode support supports workpieces. The cathode support is positioned opposite to the anode support and supports a target. The shield includes a rotary disk, a first arm, a second arm, a first shield plate and a second shield plate. The first and second arms are securely mounted to the rotary disk along the radial direction of the rotary disk. A radial extending direction of the first arm from the rotary disk is opposite to that of the second arm. The first shield plate is securely mounted to the first arm, and the second shield plate securely mounted to the second arm. The rotary disk rotates the first and second shield plates to selectively expose or shield the target. | 03-29-2012 |
20120097533 | DOUBLE-LAYER SHUTTER SPUTTERING APPARATUS - A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets. | 04-26-2012 |
20120103802 | THIN FILM DEPOSITING APPARATUS - Provided is a thin film depositing apparatus. The thin film depositing apparatuses includes: a chamber where a process is performed on a subject to be processed; a plurality of supporters supporting the subject to be processed in the chamber; at least one sputter gun inducing a first plasma below or on the subject to be processed between the plurality of supporters; and a plurality of inductive coupled plasma tubes inducing a more expanded second plasma than the first plasma between the sputter gun and the subject to be processed. | 05-03-2012 |
20120118733 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus includes a process chamber, a substrate conveyer provided in the process chamber to convey a substrate, a target holder provided in the process chamber to hold a flat target, a magnet unit arranged on a back side of the target holder, an electric power supply configured to supply power to the target holder, a controller configured to control the electric power supply and the substrate conveyer, and a target holder moving unit configured to move the target holder in a plane substantially parallel to a surface of the target holder, wherein the controller is configured to drive the substrate conveyer to convey the substrate and to drive the target holder moving unit to move the target holder while causing the electric power supply to supply power to the target holder. | 05-17-2012 |
20120132522 | Deposition/bonding chamber for encapsulated microdevices and method of use - A method for depositing a getter for encapsulation in a device cavity containing a microdevice comprises depositing the getter material while the device wafer and lid wafer are enclosed in a bonding chamber. A plasma sputtering process may be used, wherein by applying a large negative voltage to the lid wafer, a plasma is formed in the low pressure environment within the bonding chamber. The plasma then sputters the getter material from a getter target, and this getter material is directly thereafter sealed within the device cavity of the microdevice, all within the deposition/bonding chamber. | 05-31-2012 |
20120160671 | SPUTTERING DEVICE - Provided is a sputtering device which can achieve a sputtering while blocking light that enters from a sputtering space onto a substrate as an object to be sputtered on which an organic thin film is formed, thereby preventing the deterioration in properties of the organic thin film. Specifically provided is a sputtering device for achieving a sputtering of a substrate that is placed on the side of a sputtering space, wherein the sputtering space is formed between a pair of targets that are so placed as to face each other. The sputtering device comprises: an electric power source configured to apply a voltage between the pair of targets; a gas supply unit configured to supply an inert gas to the sputtering space; and a light-shielding mechanism configured to be placed between the sputtering space and the substrate. | 06-28-2012 |
20120205241 | PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region. | 08-16-2012 |
20120211359 | WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS - Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support. | 08-23-2012 |
20120247952 | FILM FORMING METHOD BY SPUTTERING APPARATUS AND SPUTTERING APPARATUS - The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position. | 10-04-2012 |
20130020195 | VACUUM DEPOSITION APPARATUS - Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material. | 01-24-2013 |
20130087452 | PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region. | 04-11-2013 |
20130098757 | SPUTTERING DEPOSITION APPARATUS AND ADHESION PREVENTING MEMBER - An adhesion-preventing member from which a thin film of an adhered material is not peeled off during a film deposition process and a sputter deposition apparatus having the adhesion-preventing member. Adhesion-preventing members | 04-25-2013 |
20130140172 | IN-LINE SPUTTERING APPARATUS - An in-line sputtering apparatus includes a loading chamber, a deposition chamber and an unloading chamber. The deposition chamber is positioned between the loading chamber and the unloading chamber. The deposition chamber includes at least one deposition room, a plurality of electrodes and at least one target assembly. Each deposition room defines a deposition area. A plurality of electrodes is positioned on opposite sidewalls of the deposition room, and the electrodes on the same sidewall are equidistantly spaced from each other. Each target assembly is positioned in one deposition room, which includes a plurality of targets and at least one shielding member. Each target is mounted on one electrode and away from the deposition area, a gap is formed between each two adjacent targets, each shielding member is positioned toward one gap for shielding sputtering of atoms from the edges of two neighboring targets. | 06-06-2013 |
20130153413 | SPUTTER GUN SHUTTER - In some embodiments of the present invention, a gun shutter is provided that comprises a gun shutter lip that aligns with a grounded shield lip to form a gap. The gap is operable to prevent contamination from other sputter guns present in the chamber. Additionally, the gun shutter is spaced apart from the face of the target so that a stable plasma may be ignited and maintained between the face of the target and the gun shutter. This allows the gun shutter to be used as a burn-in or conditioning shield and allows the elimination of other shields, thus lowering the size, complexity, and cost of the chamber. | 06-20-2013 |
20130180850 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus comprises, within a vacuum chamber ( | 07-18-2013 |
20130186751 | PINNED TARGET DESIGN FOR RF CAPACITIVE COUPLED PLASMA - In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly. | 07-25-2013 |
20130256128 | PROCESS KIT WITH PLASMA-LIMITING GAP - Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower. | 10-03-2013 |
20130256129 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a chamber ( | 10-03-2013 |
20130264199 | CYLINDRICAL MAGNETRON SPUTTERING TARGET ASSEMBLY - A cylindrical magnetron sputtering target assembly includes a head and a main body connecting to the head. The main body includes a target, a protecting element located partially around the target, and an insulating assembly. The insulating assembly includes at least one insulating element. The insulating element is fastened to the inner sidewall of the inner plate. | 10-10-2013 |
20130299345 | SPUTTERING APPARATUS - A sputtering apparatus is provided with an elongated target holder, a substrate holder having a substrate receiving surface, and a mask assembly having an opening configured between the target holder and the substrate holder. The mask assembly is comprised of a first and second masking part having facing edges that form the opening and are disposed parallel to the substrate receiving surface and independently movable in a direction perpendicular to the length of the target holder and parallel to the substrate receiving surface, or in a direction perpendicular to the substrate receiving surface. | 11-14-2013 |
20130319855 | MAGNETRON SPUTTERING SYSTEM - A magnetron sputtering system is disclosed in the present invention. A chamber includes a target holder, a substrate holder and a magnetic-field generating component. The magnetic-field generating component is configured to generate a magnetic field in a surrounding area of a substrate to be sputtered and deposited. The present invention can avoid the charged molecules and the cathode ions generated by the target hitting the to-be-sputtered/deposited substrate with higher energy. Therefore, it can avoid the damage of the to-be-sputtered/deposited substrate and decrease the stress of depositing the thin film on the substrate, as so to increase the yield of the products. | 12-05-2013 |
20130334038 | WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS - Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support. | 12-19-2013 |
20140027276 | TUBULAR TARGET HAVING A PROTECTIVE DEVICE - A tubular target for cathode atomization does not have a backing tube and it is made of molybdenum or a molybdenum alloy. The target has an inner surface which is in contact at least in certain regions with a cooling medium, wherein at least one region of the inner surface is separated from the cooling medium by at least one protective device. By way of example, the protective device may be in the form of a polymer layer. The tubular target exhibits outstanding long-term stability. | 01-30-2014 |
20140034489 | FILM-FORMING APPARATUS - A film-forming apparatus includes a plurality of target electrodes, a substrate holder for holding a substrate, a fires shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, first separating walls provided on a surface of the first shutter member, the surface being on the target electrode side; and second separating walls provided between the first shutter member and the target electrodes, wherein the first separating walls are provided so as to sandwich each of the plurality of openings of the first shutter member. | 02-06-2014 |
20140054167 | FILM-FORMING APPARATUS - The present invention provides a film forming apparatus configured such that the occurrence of contamination is reduced between targets. The film forming apparatus includes: a plurality of target electrodes respectively having attachment surfaces to which targets can be attached; a substrate holder for holding a substrate at a position opposing the plurality of target electrodes; a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings that can oppose the attachment surfaces; and a shield member disposed adjacent to the first shutter member and having a number of openings equal to the number of the target electrodes, wherein a gap between the first shutter member and the shield member widens toward an outer perimeter from a portion where adjacent target electrodes are closest. | 02-27-2014 |
20140061040 | ADJUSTABLE PROCESS SPACING, CENTERING, AND IMPROVED GAS CONDUCTANCE - Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life. | 03-06-2014 |
20140102889 | FILM-FORMING APPARATUS - An apparatus includes a plurality of target electrodes having attachment surfaces, a substrate holder, a first shutter member provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, a first separating portion disposed between the openings of the first shutter member on its surface of the target electrode side, and a second separating portion disposed between the first shutter member and the target electrodes. The first shutter member is driven so as to bring the first separating portion and the second separating portion toward each other so that an indirect path can be formed between the first separating portion and the second separating portion, and driven so as to bring the first separating portion and the second separating portion away from each other so that the first shutter plate can be rotated. | 04-17-2014 |
20140138243 | IN-LINE DEPOSITION SYSTEM WITH ENHANCED ADHESION OF MOLYBDENUM ON BOTTOM SHIELD - An in-line sputtering system includes a chamber and a sputtering target near a top region of the chamber. The system also includes a moving device located on a bottom region of the chamber configured to move a plurality of planar substrates loaded horizontally in a row with at least a gap distance between any neighboring substrates, The gap distance allows the bottom region to be subjected to a deposition from the sputtering target as the gap distance moves across the entire bottom region along with the plurality of planar substrates by the moving device, The system further includes a bottom shield disposed to cover entire bottom region except the moving device and configured to adhere the deposition through the gap distance from the sputtering target for preventing a deposition buildup. | 05-22-2014 |
20140166480 | ADJUSTABLE PROCESS SPACING, CENTERING, AND IMPROVED GAS CONDUCTANCE - Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life. | 06-19-2014 |
20140183039 | MAGNETRON SPUTTERING DEVICE - A magnetron sputtering device includes a vacuum chamber body defining a vacuum chamber, at least one magnetron target positioned in the vacuum chamber, and at least one shielding assembly. The at least one shielding assembly corresponds to the magnetron target. The shielding assembly includes two shielding covers positioned at two opposite sides of the magnetron target. | 07-03-2014 |
20140190822 | WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS - Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support. | 07-10-2014 |
20140262765 | Deposition System With A Rotating Drum - A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone. | 09-18-2014 |
20140262766 | PROCESSING APPARATUS AND SHIELD - A processing apparatus for processing a substrate in a vacuum processing space in a chamber includes a shield arranged in the chamber, and a holding portion configured to hold the shield by a magnetic force. The holding portion has a holding surface on which a first magnet is arranged. The shield includes a second magnet configured to generate an attraction force with respect to the first magnet, and a receiving portion configured to receive a tool configured to move the shield with respect to the holding portion. | 09-18-2014 |
20140284210 | SPUTTERING APPARATUS, TARGET AND SHIELD - A sputtering apparatus includes a backing plate, a fixing portion, and a shield surrounding the periphery of a target and having an opening. The fixing portion fixes the target to the backing plate by pressing the peripheral portion of the target against the backing plate. The shield includes a facing portion facing the backing plate without the fixing portion intervening between them, and an outer portion formed outside the facing portion. The gap between the facing portion and the backing plate is smaller than the gap between the outer portion and the backing plate. The inner surface of the shield, which faces a processing space, includes a portion which inclines such that the distance between the inner surface and the backing plate decreases from the outer portion to the facing portion. | 09-25-2014 |
20140353150 | SPUTTERING APPARATUS - A sputtering apparatus for depositing a deposition material on a substrate, the sputtering apparatus including a chamber; a target in the chamber, the target including the deposition material; and a shield between the substrate and an inner wall of the chamber, the shield including a plurality of sub-shields. | 12-04-2014 |
20140367250 | SYSTEMS FOR FORMING PHOTOVOLTAIC CELLS ON FLEXIBLE SUBSTRATES - A deposition system for depositing a thin film photovoltaic cell on a flexible substrate comprises an enclosure that is fluidically isolated from an environment external to the enclosure, and a plurality of deposition chambers in the enclosure. At least one deposition chamber of the plurality of deposition chambers comprises a magnetron sputtering apparatus that directs a material flux of one or more target materials towards a portion of the flexible substrate that is disposed in the at least one deposition chamber of the plurality of deposition chambers. A substrate payout roller in the enclosure provides a flexible substrate that is directed through each of the plurality of deposition chambers to a substrate take-up roller in the enclosure. At least one guide roller in the enclosure is configured to direct the flexible substrate to or from a given deposition chamber among the plurality of deposition chambers. | 12-18-2014 |
20140374250 | SPUTTERING APPARATUS - A sputtering apparatus includes a deposition preventing plate arranged between a substrate stage and a plurality of cathode electrodes, and a shutter plate arranged between the deposition preventing plate and the substrate stage. The deposition preventing plate has holes at positions respectively facing a plurality of targets held by the plurality of cathode electrodes. Concentric concavo-convex shapes centered on the rotation axis of the shutter plate are formed on surfaces, that face each other, of the deposition preventing plate and the shutter plate. | 12-25-2014 |
20150034481 | FASTENING MEMBER AND VACUUM DEVICE - The present invention provides a fastening member which involves only a low risk of contamination even after repeatedly performing a detachment operation, and to provide a vacuum device including it. One embodiment is a fastening member comprising: a head section including a head-upper-face portion, a seating face portion, and a head-side-face portion; and a shaft section and including a threaded portion on an end portion thereof on the opposite side from the head section, wherein the threaded portion is given hardness higher than at least those of the other portions of the fastening member, and when the member is attached to the inner wall of the chamber with the fastening member, the threaded portion is threadedly engaged with an internally threaded portion provided in the inner wall of the chamber, and the sealing face portion presses the member against the inner wall of the chamber. | 02-05-2015 |
20150075981 | ROTATING MAGNETRON SPUTTERING TARGET AND CORRESPONDING MAGNETRON SPUTTERING DEVICE - The present invention relates to a rotating magnetron sputtering target and a corresponding magnetron sputtering device. The rotating magnetron sputtering target comprises a cylindrical target, a pole shoe and a plurality of magnetrons. The magnetron comprises a first magnetic pole arranged on a central portion thereof and two second magnetic poles arranged on both sides thereof, and the first and the second magnetic poles have opposite polarities. The rotating magnetron sputtering target and the corresponding magnetron sputtering device of the present invention improve the plasma density within a coating region, so that it forms a film with better quality and better uniformity. | 03-19-2015 |
20150294845 | SUBSTRATE PROCESSING APPARATUS - An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction. | 10-15-2015 |
20150303042 | SPUTTERING APPARATUS - The present invention provides a highly efficient magnetron sputtering apparatus in which a ground shield made of a magnetic material is disposed on the outer circumference of a target, the sputtering apparatus being capable of reducing unintended discharge between a cathode and the ground shield. The sputtering apparatus according to an embodiment includes: a backing plate connected to a power supply and having a target mounting surface; a magnet disposed on the back surface of the backing plate; a grounded shield containing a magnetic material and surrounding the target mounting surface; and a fixation part located between the shield and the backing plate at an outer circumference of the target mounting surface and serving as a magnetic member. This structure reduces magnetic field lines which pass through a space between the shield and the fixation part. | 10-22-2015 |
20150364301 | ELECTRONIC DEVICE MANUFACTURING METHOD AND SPUTTERING METHOD - An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate. | 12-17-2015 |
20160047034 | SPUTTERING DEVICE - A sputtering device | 02-18-2016 |
20160104603 | APPARATUS FOR HIGH COMPRESSIVE STRESS FILM DEPOSITION TO IMPROVE KIT LIFE - Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring. | 04-14-2016 |
20160111260 | GLASS PALLET FOR SPUTTERING SYSTEMS - Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars. | 04-21-2016 |
20160145735 | COLLIMATOR FOR USE IN SUBSTRATE PROCESSING CHAMBERS - Embodiments of collimators for use in substrate processing chambers are provided herein. In some embodiments, a collimator includes: a body having a central region, a peripheral region, and a transitional region disposed between the central and peripheral regions; a first plurality of apertures in the central region having a first aspect ratio; a second plurality of apertures in the peripheral region having a second aspect ratio less than the first aspect ratio; and a third plurality of apertures in the transitional region, wherein the third plurality of apertures are cut so the transitional region forms a conical shape surrounding the central region. | 05-26-2016 |
20160189938 | ONE-PIECE PROCESS KIT SHIELD - Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield includes a cylindrical body having an upper portion and a lower portion; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inward from the lower portion. | 06-30-2016 |