| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204298060 | Triode, tetrode, auxiliary electrode or biased workpiece | 23 |
| 20090090619 | Thin-Film Deposition System - A thin-film deposition system has a vacuum chamber and a plasma generator. The plasma generator includes a case, a cathode disposed in the case, an anode assembly disposed at an end of the case, a discharge power supply for applying a discharge voltage between the cathode and the anode assembly, and a gas supply means for supplying a discharge gas into the case. Electrons within a first plasma produced in the case are extracted into the vacuum chamber according to the discharge voltage. An evaporated material in a gaseous state inside the vacuum chamber is irradiated with electrons emitted from the plasma generator to produce a second plasma. The potential at the anode assembly is controlled by anode potential-controlling means such that the electrons within the second plasma are directed at the plasma generator and the ions within the second plasma are directed at the substrate. | 04-09-2009 |
| 20090173625 | PROCESS FOR PRODUCING AN ALUMINA COATING COMPRISED MAINLY OF ALPHA CRYSTAL STRUCTURE - The present invention provides a process for producing an alumina coating comprised mainly of α crystal structure on a base material. | 07-09-2009 |
| 20090194412 | MULTI-CATHODE IONIZED PHYSICAL VAPOR DEPOSITION SYSTEM - A multi-cathode ionized physical vapor deposition system includes a reactor in which a wafer holder is arranged at a bottom wall, and at least two angled cathodes opposite a wafer are arranged at a top wall, each of the cathodes is supplied with a RF current via a matching circuit, and a pressure control mechanism including gas inlets and a gas outlet. In the system, an inner pressure of the reactor is controlled to be relatively high pressure by the pressure control mechanism. Thus, the system can form better side-wall and bottom coverage in patterned holes or trenches on the wafer surface using the atoms sputtered on each of the angled multi-cathodes. | 08-06-2009 |
| 20090194413 | MULTI-CATHODE IONIZED PHYSICAL VAPOR DEPOSITION SYSTEM - A multi-cathode ionized physical vapor deposition system includes a reactor in which a wafer holder is arranged at a bottom wall, and at least two angled cathodes opposite a wafer are arranged at a top wall, each of the cathodes is supplied with a RF current via a matching circuit, and a pressure control mechanism including gas inlets and a gas outlet. In the system, an inner pressure of the reactor is controlled to be relatively high pressure by the pressure control mechanism. Thus, the system can form better side-wall and bottom coverage in patterned holes or trenches on the wafer surface using the atoms sputtered on each of the angled multi-cathodes. | 08-06-2009 |
| 20100126853 | RF SPUTTERING ARRANGEMENT - Apparatus for sputtering comprises a vacuum chamber defined by at least one side wall, a base and a cover, at least one first electrode having a surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least a portion of the side wall and/or the base of the vacuum chamber and an additional electrically conductive member. The additional electrically conductive member comprises at least two surfaces arranged generally parallel to one another and spaced at a distance from one another. | 05-27-2010 |
| 20110100806 | BIAS SPUTTERING DEVICE - [Object] To provide a bias sputtering device having a self-revolving mechanism capable of reducing generation of foreign substances adhered to film formation surfaces. | 05-05-2011 |
| 20110120859 | SPUTTERING APPARATUS - Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm. | 05-26-2011 |
| 20110139612 | Sputtering apparatus - A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber. | 06-16-2011 |
| 20110240464 | APPARATUS FOR PHYSICAL VAPOR DEPOSITION HAVING CENTRALLY FED RF ENERGY - In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body. | 10-06-2011 |
| 20110272278 | SPUTTERING APPARATUS - The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source. | 11-10-2011 |
| 20120000772 | Deposition Apparatus And Methods To Reduce Deposition Asymmetry - One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder. | 01-05-2012 |
| 20120152735 | Production of Nanoparticles - Composite nanoparticles can be produced by a processing apparatus comprising a source of charged, moving nanoparticles or a first material and a first size, apparatus for imposing a like potential in a region lying in the path of the nanoparticles, and a physical vapour deposition source of a second material directed toward the region, thereby to produce nanoparticles of a second and greater size being a composite of the first and second materials. The apparatus for imposing a like potential can comprise one or more conductive rings surrounding the path of the nanoparticles, each at a successively lower potential. The physical vapour deposition source can be one or more of a sputter target, or an evaporative source, or another PVD source. There can be a plurality of physical vapour deposition sources, thereby allowing a larger region in which the shell is deposited. All of the physical vapour deposition sources can deposit the same material, for a uniform shell. Alternatively, different sources could allow for multiple shells or alloy shells. | 06-21-2012 |
| 20130043128 | SPUTTERING SYSTEM - The present invention aims at providing a sputtering system capable of efficiently generating high-density plasma near the surface of a sputter target and forming a film at a high rate. It also aims at providing a large-area sputtering system and a plasma processing system having a simple structure and allowing the sputter target to be easily attached/detached, maintained, or operated otherwise. The present invention provides a sputtering system in which an inductively-coupled antenna conductor plate is attached to a portion of a vacuum chamber, wherein: a sputter target plate is attached to the inductively-coupled antenna conductor on its plasma formation space side; one end of the antenna conductor is connected to a radio-frequency power source; and the other end is grounded through a capacitor. A plurality of antenna conductors may be provided to form a large-area sputtering system. | 02-21-2013 |
| 20130062198 | APPARATUS FOR PROCESSING WORK PIECE BY PULSED ELECTRIC DISCHARGES IN SOLID-GAS PLASMA - Work piece processing is performed by pulsed discharges between an anode ( | 03-14-2013 |
| 20130153412 | APPARATUS FOR ENABLING CONCENTRICITY OF PLASMA DARK SPACE - In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly. | 06-20-2013 |
| 20130161187 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed. | 06-27-2013 |
| 20130256125 | SUBSTRATE PROCESSING SYSTEM WITH MECHANICALLY FLOATING TARGET ASSEMBLY - Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member. | 10-03-2013 |
| 20130319854 | SUBSTRATE SUPPORT WITH RADIO FREQUENCY (RF) RETURN PATH - Embodiments of substrate supports having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support may include a dielectric support body having a support surface to support a substrate thereon and an opposing second surface; a chucking electrode disposed within the support body proximate the support surface; and an RF return path electrode disposed on the second surface of the dielectric support body. In some embodiments, a substrate processing system may include a process chamber having an inner volume; a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber; and a substrate support disposed below the shield, wherein the substrate support is as described above. | 12-05-2013 |
| 20130327641 | PROTECTIVE OFFSET SPUTTERING - Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed. | 12-12-2013 |
| 20140027274 | Three Dimensional Metal Deposition Technique - A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece. | 01-30-2014 |
| 20140110253 | VACUUM COATING APPARATUS - Provided is a vacuum coating apparatus that deposits a coating on a substrate, the vacuum coating apparatus including: a vacuum chamber; a vacuum exhaust unit that performs a vacuum exhaust operation inside the vacuum chamber; a plurality of rotation holding units that hold the substrate as a coating subject in a rotating state; and a revolution mechanism that revolves the plurality of rotation holding units about a revolution axis parallel to the rotation axes of the respective rotation holding units; in which the plurality of rotation holding units are divided into a plurality of groups so that power is supplied to the respective rotation holding units in a manner that the rotation holding units of the respective groups have different potentials. For example, the respective groups alternately repeat a state where the rotation holding units become cathodes and serve as working electrodes that play primary role to generate glow discharge plasma and a state where the rotation holding units serve as counter electrodes. | 04-24-2014 |
| 20140216928 | THIN-FILM FORMATION SPUTTERING DEVICE - A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device includes a target holder provided in a vacuum container, a substrate holder facing the target holder, a means for introducing a plasma generation gas into the vacuum container, a means for generating an electric field for sputtering in a region including a surface of a target, an antenna placement room provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window, and a radio-frequency antenna, which is provided in the antenna placement room, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder. | 08-07-2014 |
| 20150354054 | COOLED PROCESS TOOL ADAPTER FOR USE IN SUBSTRATE PROCESSING CHAMBERS - Embodiments of cooled process tool adapters for use in substrate processing chambers are provided herein. In some embodiments, a cooled process tool adapter includes: an annular body surrounding a central opening; a coolant channel disposed in the annular body; one or more features to facilitate supporting a process tool within the central opening; an inlet and an outlet disposed in the annular body and fluidly coupled to the coolant channel; and a power connection coupled to the annular body having a terminal to couple the annular body to a bias power source. | 12-10-2015 |
