Entries |
Document | Title | Date |
20080202688 | Silicon Carbide Gas Distribution Plate and RF Electrode for Plasma Etch Chamber - A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used as the bulk material coated with CVD SiC to provide a showerhead that is suitable for use in a capacitively-coupled plasma chamber. | 08-28-2008 |
20080264566 | Apparatus and method for removing a photoresist structure from a substrate - In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space. | 10-30-2008 |
20080308228 | Showerhead electrode assemblies for plasma processing apparatuses - Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed. | 12-18-2008 |
20080308229 | ELECTRODE ASSEMBLY AND PLASMA PROCESSING CHAMBER UTILIZING THERMALLY CONDUCTIVE GASKET AND O-RINGS - The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, a thermally conductive gasket, and a plurality of o-rings, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a thermal interface. The thermally conductive gasket and the o-rings are positioned along this thermal interface with the o-rings separating the thermally conductive gasket from the showerhead passages such that the gasket is isolated from the showerhead passages. The gasket may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate. | 12-18-2008 |
20080314523 | GAS SUPPLY MECHANISM AND SUBSTRATE PROCESSING APPARATUS - A processing gas supply hole is constituted with a gas outlet hole formed at an electrode plate and a gas injection hole formed at a processing gas supply mechanism main unit. At the gas injection hole, a processing gas having flowed in on the upstream side is injected toward the gas outlet hole through an injection opening of a nozzle portion disposed on the downstream side, so as to generate a suction force at a suction flow passage formed around the nozzle portion by taking advantage of the ejector defect. | 12-25-2008 |
20090000742 | Shower Plate and Method for Manufacturing the Same - Disclosed is a shower plate which is formed with a large number of process-gas blowing holes having a simple structure, high machinability and high dimensional accuracy without the risk of unevenness in blowing of a process gas and outbreak of particles, while ensuring constant quality and interchangeability. Through a press forming process, a powder for a ceramic material with a low dielectric constant is formed into a disc-shaped compact having dimensions determined in consideration of a sintering shrinkage value and a machining value. A gas inlet passage | 01-01-2009 |
20090000743 | SUBSTRATE PROCESSING APPARATUS AND SHOWER HEAD - A substrate processing apparatus includes a shower head having a shower plate of which gas injection portion is formed by a two layer structure made of metal and ceramic. The shower head has an upper plate made of a metal and having a gas inlet hole; a lower plate made of a metal and having a plurality of gas through holes; a gas diffusion space formed between the upper plate and the lower plate; and a cover member made of ceramic and having a plurality of gas injection openings positioned to correspond to the gas through holes, for covering an entire bottom surface of the lower plate. The shower head further includes a plurality of thermally conductive members provided to connect the upper plate with the lower plate in the gas diffusion space for transferring heat generated by processing upward. | 01-01-2009 |
20090095424 | SHOWERHEAD ELECTRODE ASSEMBLIES AND PLASMA PROCESSING CHAMBERS INCORPORATING THE SAME - The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses. The thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts. The securing hardware and the backside inserts are configured to maintain engagement of the thermal control plate and the silicon-based showerhead electrode and to permit disengagement of the thermal control plate and the silicon-based showerhead electrode while isolating the silicon-based electrode material of the silicon-based showerhead electrode from frictional contact with the securing hardware during disengagement. | 04-16-2009 |
20090120582 | SHOWER PLATE AND SUBSTRATE PROCESSING APPARATUS - A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes. | 05-14-2009 |
20090120583 | METHODS OF MAKING GAS DISTRIBUTION MEMBERS FOR PLASMA PROCESSING APPARATUSES - Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member. | 05-14-2009 |
20090145553 | Suppressor of hollow cathode discharge in a shower head fluid distribution system - A chamber component configured to be coupled to a process chamber and a method of fabricating the chamber component is described. The chamber component comprises a chamber element comprising a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the chamber element comprises a reentrant cavity formed in the first surface and a conduit having an inlet coupled to the reentrant cavity and an outlet coupled to the second surface. Furthermore, the chamber component comprises an insertable member configured to couple with the reentrant cavity, the insertable member having one or more passages formed there through and each of the one or more passages are aligned off-axis from the conduit, wherein the one or more passages are configured to receive a process fluid on the supply side and the conduit is configured to distribute the process fluid from the one or more passages on the process side. | 06-11-2009 |
20090159213 | Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead - A showerhead of a plasma reactor has an internal plenum comprising a showerhead floor and a plurality of gas injection holes through the floor of the showerhead. A path splitting manifold is immersed inside the plenum and comprises a gas supply inlet, plural gas outlets, and a plurality of channels comprising plural paths of equal lengths between the inlet and respective ones of the plural outlets. | 06-25-2009 |
20090188625 | ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER - A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing. | 07-30-2009 |
20090205782 | PLASMA PROCESSING APPARATUS - In a microwave plasma processing apparatus, a metal made lattice-like shower plate | 08-20-2009 |
20090211707 | APPARATUS FOR GAS DISTRIBUTION AND ITS APPLICATIONS - An apparatus for gas distribution includes a top dome-cover, a first gas distribution plate and a bottom plate bonded each other to deliver different gases onto substrates supporting by a susceptor. The first gas distribution plate is provided with a plurality of first island protrusions formed by intersecting a plurality of first channels and each first island protrusions has a bypass through hole so that different gases can be individually delivered via independent gas pathways formed by those through holes or those channels to prevent those different gases premix before processing on those substrates. Additionally, a fluid distribution plate disposed between the first gas distribution plate and the bottom plate may be adapted for heat dissipation. | 08-27-2009 |
20090229753 | METHOD FOR MANUFACTURING SHOWER PLATE, SHOWER PLATE MANUFACTURED USING THE METHOD, AND PLASMA PROCESSING APPARATUS INCLUDING THE SHOWER PLATE - A gas-communicating body | 09-17-2009 |
20090229754 | SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS - A shower head is provided in a processing chamber for processing a substrate therein. Further, the shower head has a facing surface facing a mounting table for mounting thereon the substrate and serves to supply one or more gases through the facing surface toward the substrate. The shower head includes a central gas supply unit for supplying a first gas through a central portion of the facing surface toward the substrate, a peripheral gas supply unit for supplying a second gas through a peripheral portion of the facing surface toward the substrate and a gas exhaust unit, provided with a plurality of gas exhaust holes formed between the central gas supply unit and the peripheral gas supply unit, for exhausting the first and the second gas from the facing surface. | 09-17-2009 |
20090236040 | ELECTRODE ASSEMBLY AND PLASMA PROCESSING CHAMBER UTILIZING THERMALLY CONDUCTIVE GASKET - The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and a thermally conductive gasket, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a disjointed thermal interface comprising portions proximal to showerhead passages of the showerhead electrode and portions displaced from the showerhead passages. The displaced portions are recessed relative to the proximal portions and are separated from the showerhead passages by the proximal portions of the thermal interface. The gasket is positioned along the displaced portions such that the gasket is isolated from the showerhead passages and may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate. | 09-24-2009 |
20090236041 | SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS - A shower head is provided in a processing chamber for processing a substrate therein to face a mounting table for mounting thereon the substrate and formed of a laminated body in which a plurality of plate-shaped members are laminated. The shower head serves to supply one or more gases in a shower shape toward the substrate. The shower head includes a first gas supply unit for supplying a first gas toward the substrate through first gas injection openings provided in the laminated body, a second gas supply unit for supplying a second gas through second gas injection openings provided in the laminated body and a plurality of gas exhaust holes, formed through the laminated body, for exhausting a gas through a portion of the laminated body, the portion facing the mounting table. | 09-24-2009 |
20090250169 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 10-08-2009 |
20090272492 | PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub. | 11-05-2009 |
20090277587 | FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES - Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel. | 11-12-2009 |
20090283217 | APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS - A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate. | 11-19-2009 |
20100000683 | Showerhead electrode - A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate. | 01-07-2010 |
20100038033 | ANCHORING INSERTS, ELECTRODE ASSEMBLIES, AND PLASMA PROCESSING CHAMBERS - A silicon-based showerhead electrode is provided where backside inserts are positioned in backside recesses formed along the backside of the electrode. The backside inserts comprise a threaded outside diameter, a threaded inside diameter, and a tool engaging portion formed in the threaded inside diameter. The tool engaging portion is formed such that the backside insert further comprises one or more lateral shielding portions between the tool engaging portion and the threaded outside diameter to prevent a tool engaged with the tool engaging portion of the backside insert from extending beyond the threaded outside diameter of the insert. Further, the tool engaging portion of the backside insert comprises a plurality of torque-receiving slots arranged about the axis of rotation of the backside insert. The torque-receiving slots are arranged to avoid on-axis rotation of the backside insert via opposing pairs of torque receiving slots. | 02-18-2010 |
20100065214 | SHOWERHEAD ELECTRODE ASSEMBLY FOR PLASMA PROCESSING APPARATUSES - A showerhead electrode assembly of a plasma processing apparatus includes a thermal control plate attached to a showerhead electrode, and a top plate attached to the thermal control plate. At least one thermal bridge is provided between opposed surfaces of the thermal control plate and the top plate to allow electrical and thermal conduction between the thermal control plate and top plate. A lubricating material between the thermal bridge and the top plate minimizes galling of opposed metal surfaces due to differential thermal expansion between the top plate and thermal control plate. A heater supported by the thermal control plate cooperates with the temperature controlled top plate to maintain the showerhead electrode at a desired temperature. | 03-18-2010 |
20100096085 | PLASMA REACTOR WITH A CEILING ELECTRODE SUPPLY CONDUIT HAVING A SUCCESSION OF VOLTAGE DROP ELEMENTS - A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly. | 04-22-2010 |
20100163187 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a vacuum chamber, a sample table that places the sample in the vacuum chamber, and a gas supply unit faced to the sample table and having a gas supply surface with a diameter larger than that of the sample, wherein gas injection holes each having identical diameter are provided concentrically on the gas supply surface, a hole number density of the gas injection holes present in an outer diameter position of the sample or in an outside of the outer diameter position is made higher than that of the gas injection holes present inside the outer diameter position of the sample, and a diameter of the gas injection holes present in the outer diameter position of the sample or in the outside from the outer diameter position is larger than that of the gas injection holes present inside the diameter of the sample. | 07-01-2010 |
20100206483 | RF Bus and RF Return Bus for Plasma Chamber Electrode - For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor. | 08-19-2010 |
20100230051 | SHOWER HEAD AND PLASMA PROCESSING APPARATUS HAVING SAME - A shower head is provided, in a processing chamber in which a substrate is processed, to face a mounting table for mounting the substrate thereon. The shower head includes: a facing surface that faces the mounting table to supply a gas to the substrate in a form of shower through a plurality of gas injection holes formed on the facing surface; an opposing surface provided opposite to the facing surface; and a plurality of bar-shaped heat transfer columns standing on the opposing surface. Here, the heat transfer columns have varying lengths and/or thicknesses to adjust heat capacities thereof. The heat transfer columns are made of one of aluminum, stainless steel, and copper. | 09-16-2010 |
20100230052 | SHOWER HEAD AND PLASMA PROCESSING APPARATUS HAVING SAME - A shower head is provided, in a processing chamber in which a substrate is processed, to face a mounting table for mounting the substrate thereon. The shower head includes: a facing surface that faces the mounting table to supply a gas to the substrate in a form of shower through a plurality of gas injection holes formed on the facing surface; an opposing surface provided opposite to the facing surface; a plurality of gas exhaust holes extending between the facing surface and the opposing surface to perform gas exhaust from the facing surface toward the opposing surface; and a plurality of electrodes provided on the opposing surface, an ion-confining voltage being applied to the electrodes. | 09-16-2010 |
20100243165 | APPARATUS FOR SURFACE-TREATING WAFER USING HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA - Disclosed herein is an apparatus for surface-treating a wafer using high-frequency inductively-coupled plasma, including a process chamber including a plasma generation unit into which a reaction gas is introduced and which generates plasma, and a wafer treatment unit in which any one or more selected from among plasma treatment, thin film formation and etching is performed; and a pressure control unit including a vacuum plate, and a pumping port, a two-stage valve, a turbo pump and an APC valve which are organically connected with the vacuum plate, to control a pressure in the process chamber and a pumping rate. | 09-30-2010 |
20100243166 | GAS FLOW PATH STRUCTURE AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a depressurizable processing chamber | 09-30-2010 |
20100252197 | SHOWERHEAD ELECTRODE WITH CENTERING FEATURE - A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate. | 10-07-2010 |
20100276084 | PLASMA PROCESSING EQUIPMENT AND GAS DISTRIBUTION APPARATUS THEREOF - A gas distribution apparatus for a plasma processing equipment is provided. The gas distribution apparatus includes a support plate ( | 11-04-2010 |
20100307686 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus capable of effectively heating each component without generating an abnormal electric discharge. The substrate processing apparatus | 12-09-2010 |
20100307687 | INTERNAL MEMBER OF A PLASMA PROCESSING VESSEL - An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin. | 12-09-2010 |
20100319854 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction. | 12-23-2010 |
20100319855 | SUBSTRATE SUPPORTING UNIT, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE SUPPORTING UNIT - Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor ( | 12-23-2010 |
20110005682 | Apparatus for Plasma Processing - Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider. | 01-13-2011 |
20110048642 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape. | 03-03-2011 |
20110061812 | Apparatus and Methods for Cyclical Oxidation and Etching - Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device. | 03-17-2011 |
20110061813 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space. | 03-17-2011 |
20110083809 | EDGE-CLAMPED AND MECHANICALLY FASTENED INNER ELECTRODE OF SHOWERHEAD ELECTRODE ASSEMBLY - An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided. | 04-14-2011 |
20110088847 | SHOWERHEAD ASSEMBLY FOR PLASMA PROCESSING CHAMBER - A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots. | 04-21-2011 |
20110120651 | SHOWERHEAD ASSEMBLY WITH IMPROVED IMPACT PROTECTION - Showerhead assemblies with improved impact protection are provided herein. In some embodiments, a showerhead assembly includes a body having a plenum disposed therein, the body having a plurality of first holes extending from the plenum to a substrate facing surface of the body; a plate disposed on the substrate facing surface of the body and having a plurality of second holes formed therethrough, each second hole corresponding with a respective first hole of the body; and a lip extending from the body and circumscribing the plate, the lip extending beyond a chamber facing surface of the plate. In some embodiments, the showerhead assembly is disposed in the inner volume of a process chamber. | 05-26-2011 |
20110139372 | SHOWERHEAD ASSEMBLY FOR VACUUM PROCESSING APPARATUS - Vacuum processing chambers having provisions for thermal expansion and contraction. Specific embodiments provide a plasma processing chamber having a showerhead that enables thermal expansion and contraction without imparting structural stress on the chamber body and without breaking any vacuum seal. | 06-16-2011 |
20110162800 | RECONFIGURABLE MULTI-ZONE GAS DELIVERY HARDWARE FOR SUBSTRATE PROCESSING SHOWERHEADS - Reconfigurable showerheads used in process chambers for substrate processing are provided herein. In some embodiments, a reconfigurable showerhead may include a body having one or more plenums disposed therein; and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones. In some embodiments, a substrate processing system may include a process chamber having a reconfigurable showerhead coupled to a gas supply for providing one or more process gases to the process chamber, the reconfigurable showerhead including a body having one or more plenums disposed therein and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones. | 07-07-2011 |
20110186228 | Showerhead - A showerhead is disclosed in this invention. The showerhead includes a bottom portion, at least one plate, and a top portion. The bottom portion includes a plurality of gas tubes which are integratedly formed on the bottom portion. The gas tubes include at least one first gas tube. The at least one plate includes a first plate. The first plate includes a plurality of first openings, wherein the gas tubes pass through the first openings. The top portion is coupled to the bottom portion for forming at least one inner space. | 08-04-2011 |
20110186229 | GAS SHOWER STRUCTURE AND SUBSTRATE PROCESSING APPARATUS | 08-04-2011 |
20110198034 | GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING - Described herein are exemplary methods and apparatuses for fabricating a gas distribution showerhead assembly in accordance with one embodiment. In one embodiment, a method includes providing a gas distribution plate having a first set of through-holes for delivering processing gases into a semiconductor processing chamber. The first set of through-holes is located on a backside of the plate (e.g., Aluminum substrate). The method includes spraying (e.g., plasma spraying) a coating material (e.g., Ytrria based material) onto a cleaned surface of the gas distribution plate. The method includes removing (e.g., surface grinding) a portion of the coating material from the surface to reduce a thickness of the coating material. The method includes forming (e.g., UV laser drilling, machining) a second set of through-holes in the coating material such that the through-holes are aligned with the first-set of through-holes. | 08-18-2011 |
20110203735 | GAS INJECTION SYSTEM FOR ETCHING PROFILE CONTROL - A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part. | 08-25-2011 |
20110214814 | PLASMA PROCESSING APPARATUS AND SHOWER HEAD - There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes. | 09-08-2011 |
20110226420 | ELECTRODE AND PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including a processing chamber | 09-22-2011 |
20110284165 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus that is capable of promoting improvement of in-plane uniformity of a process compared to a conventional technology, promoting miniaturization of the apparatus and improvement of processing efficiency, and easily changing an interval between an upper electrode and a lower electrode. The plasma processing apparatus includes a lower electrode provided in a processing chamber; an upper electrode having a function of a shower head and capable of moving up and down; a lid provided at an upper side of the upper electrode and airtightly blocking an upper opening of the processing chamber; a plurality of exhaust holes formed on a facing surface of the upper electrode; an annular member capable of moving up and down with the upper electrode by being formed to protrude downward along a circumferential portion of the upper electrode, and forming a processing space surrounded by the lower electrode, the upper electrode, and the annular member at a descending location; and a coil disposed on an inner wall portion of the annular member and accommodated in a container formed of a dielectric material. | 11-24-2011 |
20110284166 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 11-24-2011 |
20110315320 | GAS DISTRIBUTING DEVICE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface. | 12-29-2011 |
20120024478 | Showerhead - A showerhead is disclosed in this invention. The showerhead includes a bottom plate, a channel plate, and a top plate. The bottom plate includes a plurality of cooling channels and a plurality of gas holes, wherein the gas holes includes at least one first gas hole and at least one second gas hole. The channel plate includes a first trench area and a second trench area, wherein the first gas hole is connected with the first trench area, and the second gas hole is connected with the second trench area. The top plate is coupled to the channel plate. | 02-02-2012 |
20120037314 | SUBSTRATE PROCESSING APPARATUS AND SIDE WALL COMPONENT - A substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material. | 02-16-2012 |
20120055632 | SHOWERHEAD ELECTRODE - A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks. | 03-08-2012 |
20120073754 | PLASMA CONFINEMENT RING ASSEMBLY FOR PLASMA PROCESSING CHAMBERS - A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring. | 03-29-2012 |
20120073755 | ELECTRODE AND PLASMA PROCESSING APPARATUS - Electric field intensity distribution of a high frequency power for plasma generation can be controlled without generating abnormal electric discharge. There is provided an electrode for a plasma processing apparatus capable of supplying a gas. The electrode may include a base member | 03-29-2012 |
20120090783 | PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF - There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes. | 04-19-2012 |
20120097330 | DUAL DELIVERY CHAMBER DESIGN - A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead. | 04-26-2012 |
20120097331 | GAS FLOW DISTRIBUTION RECEPTACLES, PLASMA GENERATOR SYSTEMS, AND METHODS FOR PERFORMING PLASMA STRIPPING PROCESSES - Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings. | 04-26-2012 |
20120111501 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a lower electrode which is provided in a process chamber and functions as a holding stage on which a substrate is placed; an upper electrode which functions as the shower head for introducing a gas and is vertically movable; a cover body which is provided over the upper electrode and hermetically closes an upper opening of the process chamber; an isolated space providing member which is provided to close a space between the upper electrode and the cover body, provides therein an isolated space isolated from a space outside the isolated space providing member, and includes therein an inlet/outlet through which a gas is introduced/exhausted, wherein a size of the isolated space varies as the upper electrode is vertically moved; and a gas introducing and exhausting mechanism which introduces/exhausts a gas into/from the isolated space of the isolated space providing member. | 05-10-2012 |
20120145326 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 06-14-2012 |
20120175062 | CAM-LOCKED SHOWERHEAD ELECTRODE AND ASSEMBLY - A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode. | 07-12-2012 |
20120180954 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 07-19-2012 |
20120205046 | TUNABLE GROUND PLANES IN PLASMA CHAMBERS - An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls. | 08-16-2012 |
20120216954 | APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICES AND SUBSTRATES - An apparatus and method for fabricating semiconductor devices may increase reliability of the semiconductor devices by decreasing generation of particles and enhancing operation efficiency by decreasing the number of cleanings. The apparatus may include a chamber having a cover plate, susceptors for securely placing semiconductor substrates within the chamber, shower heads located on the cover plate to supply reaction gases into the chamber, and a curtain gas line connected to the cover plate to supply heated curtain gases between the shower heads. | 08-30-2012 |
20120222814 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing apparatus capable of more accurately controlling plasma. The plasma processing apparatus includes a shower head provided within a processing chamber, in which a substrate accommodated therein is processed, to be faced to a mounting table for mounting the substrate and supply gas from a plurality of gas discharging holes provided on a facing surface that faces the mounting table toward a substrate in a shower pattern; a plurality of exhaust holes that passes through a surface located at an opposite side to the facing surface of the shower head; a circular plate-like body that is disposed parallel to the opposite surface in a exhaust space that communicates with the exhaust holes distributed at the opposite surface and made of a conductive material; and a moving unit configured to move the plate-like body to change a distance between the exhaust holes and the plate-like body. | 09-06-2012 |
20120222815 | HYBRID CERAMIC SHOWERHEAD - Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement. | 09-06-2012 |
20120234491 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing. | 09-20-2012 |
20120247675 | PLASMA PROCESSING APPARATUS AND PLASMA GENERATION ANTENNA - A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus | 10-04-2012 |
20120267049 | GROUNDING ASSEMBLY FOR VACUUM PROCESSING APPARATUS - Vacuum processing chambers having provisions for improved electrical contact to substrate carrier. Specific embodiments provide a plasma processing chamber having a pedestal for supporting the carrier, and a plurality of fixed posts and resilient contacts are distributed over the area of the pedestal. The fixed posts provide physical support for the carrier, while the resilient contacts provide reliable and repeatable multi-point electrical contact to the carrier. | 10-25-2012 |
20120298302 | VACUUM PLASMA PPROCESSING CHAMBER WITH A WAFER CHUCK FACING DOWNWARD ABOVE THE PLASMA - A process plasma chamber for processing a wafer may include a chamber body for processing the wafer, a wafer chuck for positioning the wafer within the chamber body and a plasma body being generated by RF power in the chamber body. The wafer chuck may position the wafer downwards and above the plasma body. The chamber body may include a showerhead positioned below the plasma body. The chamber body may include a first top electrode for receiving RF power. The chamber body may include a second top electrode for receiving RF power. | 11-29-2012 |
20120305190 | GAS DISTRIBUTION SYSTEM FOR CERAMIC SHOWERHEAD OF PLASMA ETCH REACTOR - A gas delivery system for a ceramic showerhead includes gas connection blocks and a gas ring, the gas connection blocks mounted on the gas ring such that gas outlets in the blocks deliver process gas to gas inlets in an outer periphery of the showerhead. The gas ring includes a bottom ring with channels therein and a welded cover plate enclosing the channels. The gas ring can include a first channel extending ½ the length of the gas ring, two second channels connected at midpoints thereof to downstream ends of the first channel, and four third channels connected at midpoints thereof to downstream ends of the second channels. the cover plate can include a first section enclosing the first channel, two second sections connected at midpoints thereof to ends of the first section, and third sections connected at midpoints thereof to ends of the second sections. The channels are arranged such that the process gas travels equal distances for a single gas inlet in the gas ring to eight outlets in the cover ring allowing equal gas flow. | 12-06-2012 |
20120318457 | MATERIALS AND COATINGS FOR A SHOWERHEAD IN A PROCESSING SYSTEM - Apparatus and systems are disclosed for providing a protective material for a showerhead of a processing system. In an embodiment, a processing system includes a processing chamber for processing substrates and a showerhead having a diffuser plate for distributing processing gases to the processing chamber. The diffuser plate may include a protective material to protect the showerhead from processing gases. The diffuser plate may be formed with tungsten or tungsten coated with a tantalum alloy and tantalum. | 12-20-2012 |
20120325406 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 12-27-2012 |
20130000848 | PEDESTAL WITH EDGE GAS DEFLECTOR FOR EDGE PROFILE CONTROL - A substrate processing system includes a pedestal including a substrate supporting surface having a diameter that is greater than a diameter of a substrate to be processed by the substrate processing system. A first surface extends a first distance above the substrate supporting surface in a direction substantially perpendicular to the substrate supporting surface. The first distance is greater than or equal to one-half of a thickness of the substrate. A gap is defined between the first surface and an outer diameter of the substrate. A second surface extends a second distance from the first surface at an angle with respect to the first surface. The angle is greater than zero and less than ninety degrees. A third surface extends from the second surface and is substantially parallel to the substrate supporting surface. An etchant source directs etchant onto the substrate to etch the substrate. | 01-03-2013 |
20130008606 | SUBSTRATE PROCESSING APPARATUS AND ELECTRODE STRUCTURE - A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals. | 01-10-2013 |
20130014896 | Wafer-Supporting Device and Method for Producing SameAANM Shoji; FumitakaAACI Kawasaki-shiAACO JPAAGP Shoji; Fumitaka Kawasaki-shi JPAANM Fukuda; HideakiAACI TokyoAACO JPAAGP Fukuda; Hideaki Tokyo JP - A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [μm]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer: | 01-17-2013 |
20130081762 | Plasma Tuning Rods in Microwave Processing Systems - The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space. | 04-04-2013 |
20130105084 | COMPONENT TEMPERATURE CONTROL USING A COMBINATION OF PROPORTIONAL CONTROL VALVES AND PULSED VALVES | 05-02-2013 |
20130153148 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 06-20-2013 |
20130199728 | PLASMA PROCESSING APPARATUS - The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber | 08-08-2013 |
20130199729 | PROCESSING GAS DIFFUSING AND SUPPLYING UNIT AND SUBSTRATE PROCESISNG APPARATUS - A processing gas diffusing and supplying unit is provided in a substrate processing unit including a processing chamber for accommodating a substrate. The processing gas diffusing and supplying unit comprises a main body; a plate supported by the main body and having a plurality of gas supply holes; a partition wall; an internal space having a first and a second space partitioned by the partition wall; a first and a second opening respectively communicating with the first and the second space while facing the plate, first and a second space being connected to a first and a second processing gas introducing pipe of the processing chamber, respectively; and a first and a second shielding portion respectively installed in the first and the second space and having a surface facing the first and the second opening. | 08-08-2013 |
20130269876 | APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE - An apparatus for fabricating a semiconductor device includes a chamber, a processing part inside the chamber, a gas injection pipe connected to the chamber, a gas pumping pipe connected to the chamber, and a baffle assembly embedded in a chamber wall, and the baffle assembly includes a baffle plate having baffle holes, and a baffle guide surrounding an outer surface of the baffle plate. | 10-17-2013 |
20130276982 | SUBSTRATE PROCESSING APPARATUS AND ELECTRODE STRUCTURE - A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals. | 10-24-2013 |
20130276983 | INJECTION MEMBER FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS HAVING THE SAME - A plasma processing apparatus may include a process chamber configured to perform a plasma using process and contain a plurality of substrates, a support member provided in the process chamber, the substrates being laid on the same level of the support member, an injection member provided to face the support member and include a plurality of baffles, such that at least one reaction gas and a purge gas can be injected onto the substrates in an independent manner, and a driving part configured to rotate the support member or the injection member, such that the baffles of the injection member can orbit with respect to the plurality of the substrates laid on the support member. The injection member may include a plasma generator, which may be provided on at least one, configured to inject the reaction gas, of the baffles to turn the reaction gas into plasma. | 10-24-2013 |
20130284373 | PLASMA RESISTANT CERAMIC COATED CONDUCTIVE ARTICLE - To manufacture a ceramic coated article, at least one surface of a conductive article is roughened to a roughness of approximately 100 micro-inches (μin) to approximately 300 μin. The conductive article may then be heated and coated with a ceramic coating comprising a yttrium containing oxide to a thickness of approximately 10-40 mil. | 10-31-2013 |
20140020834 | APPARATUS FOR ETCHING HIGH ASPECT RATIO FEATURES - Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body. | 01-23-2014 |
20140202634 | RADIAL TRANSMISSION LINE BASED PLASMA SOURCE - Radial transmission line based plasma sources for etch chambers are described. In an example, a radial transmission line based plasma source includes a gas delivery channel having a first end coupled to a gas inlet and having a second end coupled to a plasma showerhead. A folded or co-axial stub surrounds at least a portion of the gas delivery channel. An RF input is coupled to the folded or co-axial stub. | 07-24-2014 |
20140209242 | SUBSTRATE PROCESSING CHAMBER COMPONENTS INCORPORATING ANISOTROPIC MATERIALS - Substrate processing chamber components for use in substrate processing chambers are provided herein. In some embodiments, a substrate processing chamber component may include a body having a first surface, one or more heat exchangers disposed within the body below the first surface, and one or more anisotropic layers, wherein a separate anisotropic layer is disposed between each of the one or more heat exchangers and the first surface. | 07-31-2014 |
20140209243 | Plasma Equipment and Method of Dry-Cleaning the Same - A plasma equipment includes a chamber, a shower head disposed in an upper part of an inner space of the chamber for discharging a cleaning gas into the chamber, a plasma generator for generating a plasma gas from the cleaning gas, a lower electrode disposed in a lower part of the inner space of the chamber, a chuck covering the lower electrode, and a field inducing unit disposed outside the chamber for inducing an electric field or a magnetic field within the chamber in a direction parallel to top surfaces of the chuck and the lower electrode. The field inducing unit concentrates the plasma gas on an inner sidewall of the chamber and protects the chuck from the plasma gas. | 07-31-2014 |
20140238608 | CERAMIC SHOWERHEAD WITH EMBEDDED RF ELECTRODE FOR CAPACITIVELY COUPLED PLASMA REACTOR - A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material. | 08-28-2014 |
20140262037 | TRANSPARENT YTTRIA COATED QUARTZ SHOWERHEAD - Embodiments of the invention generally relate to a quartz showerhead having an aerosol-deposited yttria coating thereon. The yttria coating is sprayed on the quartz surface of the showerhead through a high pressure nozzle in a vacuum chamber. The yttria coating is transparent in the UV wavelength range, and allows the passage of UV light therethrough. The yttria coating erodes significantly slower than quartz in the presence of a cleaning gas, and thus extends the life of the quartz showerhead while facilitating the transmittance of UV light through the showerhead. | 09-18-2014 |
20150129131 | SEMICONDUCTOR PROCESSING APPARATUS AND PRE-CLEAN SYSTEM - A semiconductor processing apparatus includes an electromagnetic generator, an analog signal module, and an electromagnetic shield. The electromagnetic generator is capable of generating an electromagnetic field. The analog signal module is located adjacent to the electromagnetic generator and capable of generating an analog signal. The electromagnetic shield is capable of shielding the analog signal module. The electromagnetic shield includes a plurality of covering plates. Each of the covering plates and the analog signal module are apart from at least a predetermined distance. | 05-14-2015 |
20150129132 | SHOWERHEAD AND APPARATUS FOR PROCESSING A SUBSTRATE INCLUDING THE SAME - A showerhead includes a body configured to receive a reaction gas, a nozzle on the body configured to inject the reaction gas to a substrate, and a plurality of conducting members in thermal contact with the body to conduct heat generated from the substrate. | 05-14-2015 |
20150315706 | LOW VOLUME SHOWERHEAD WITH POROUS BAFFLE - A low volume showerhead in a semiconductor processing apparatus can include a porous baffle to improve the flow uniformity and purge time during atomic layer deposition. The showerhead can include a plenum volume, one or more gas inlets in fluid communication with the plenum volume, a faceplate including a plurality of first through-holes for distributing gas onto a substrate in the semiconductor processing apparatus, and a porous baffle positioned in a region between the plenum volume and the one or more gas inlets. The one or more gas inlets can include a stem having a small volume to improve purge time. The baffle can be porous and positioned between the stem and the plenum volume to improve flow uniformity and avoid jetting. | 11-05-2015 |
20150364354 | MULTI-ZONE HEATED ESC WITH INDEPENDENT EDGE ZONES - An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. In embodiments, a plasma processing chuck includes a plurality of independent edge zones. In embodiments, the edge zones are segments spanning different azimuth angles of the chuck to permit independent edge temperature tuning, which may be used to compensate for other chamber related non-uniformities or incoming wafer non-uniformities. In embodiments, the chuck includes a center zone having a first heat transfer fluid supply and control loop, and a plurality of edge zones, together covering the remainder of the chuck area, and each having separate heat transfer fluid supply and control loops. In embodiments, the base includes a diffuser, which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid. | 12-17-2015 |
20150371825 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus in which high frequency power to generate plasma supplied from a high frequency power supply is introduced into a processing chamber via a top plate and a shower plate and a member to be processed mounted on a stage electrode is processed, wherein a grounded spacer whose base material is a metal is installed between the shower. plate and an inner cylinder. | 12-24-2015 |
20150380215 | METHOD OF PATTERNING A LOW-K DIELECTRIC FILM - Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer. | 12-31-2015 |
20160005571 | SHOWERHEAD HAVING A DETACHABLE HIGH RESISTIVITY GAS DISTRIBUTION PLATE - Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate. | 01-07-2016 |
20160079036 | Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity - A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber. | 03-17-2016 |
20160079040 | Plasma Processing Devices Having a Surface Protection Layer - Plasma processing devices may include a process chamber body, a substrate support unit in a lower portion of the process chamber body, and a window part in an upper portion of the process chamber body. The window part may include a base layer and a surface protection layer on the base layer and configured to face the substrate support unit. The surface protection layer may include an oxide having a columnar structure. | 03-17-2016 |
20160093472 | GAS DISTRIBUTION DEVICE WITH ACTIVELY COOLED GRID - A grid assembly for a substrate processing system includes a first portion including a first body defining a central opening, an inlet, an outlet, and an upper manifold that is located in the first body and that is in fluid communication with the inlet or the outlet. A second portion is arranged adjacent to the first portion and includes a second body defining a central opening. A plurality of tubes is arranged in the central opening of the second body. First ones of the plurality of tubes are in fluid communication with the upper manifold. A lower manifold is located in the second body and is in fluid communication with the other one of the inlet or the outlet. Second ones of the plurality of tubes are in fluid communication with the lower manifold. The grid assembly is arranged between a remote plasma source and a substrate. | 03-31-2016 |
20160168706 | LINER ASSEMBLY AND SUBSTRATE PROCESSING APPARATUS HAVING THE SAME | 06-16-2016 |
20170236688 | CHAMBER MEMEBER OF A PLASMA SOURCE AND PEDESTAL WITH RADIALLY OUTWARD POSITIONED LIFT PINS FOR TRANSLATION OF A SUBSTRATE C-RING | 08-17-2017 |
20170236691 | CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT | 08-17-2017 |