Entries |
Document | Title | Date |
20080236749 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member. | 10-02-2008 |
20080245479 | ETCHING SYSTEM - An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer. | 10-09-2008 |
20080314522 | APPARATUS AND METHOD TO CONFINE PLASMA AND REDUCE FLOW RESISTANCE IN A PLASMA REACTOR - An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region. | 12-25-2008 |
20090000740 | Vaporizer and Processor - A vaporizer for vaporizing a force-fed liquid source material in a depressurized atmosphere to generate a source gas and discharging the source gas together with a carrier gas, the vaporizer includes a liquid reservoir chamber for temporarily storing the force-fed liquid source material; a vaporization chamber communicating with the liquid reservoir chamber via a valve port. Further the vaporizer includes a valve body adapted to sit on a vale seat surrounding the valve port of the liquid reservoir chamber; an actuator for driving the valve body; a carrier gas injection hole formed at a side of the valve body facing the valve port; and a discharge port for discharging the source gas from the vaporization chamber. By virtue of a specific arrangement of the carrier gas injection hole, the liquid source material is prevented from remaining unvaporized at a downstream side of the valve port. | 01-01-2009 |
20090000741 | Vacuum prcessing apparatus and vacuum processing method of sample - A vacuum processing apparatus includes a vacuum container which can be depressurized, a sample holder inside of the vacuum container for mounting a sample to be processed, wherein films laid over a surface of the sample are etched with plasma generated in a space above the sample holder. The apparatus further includes a gas supply channel for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, and a pressure control unit for changing stepwise the pressure of the gas supply channel between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of the sample by the etching. | 01-01-2009 |
20090032190 | Plasma processing apparatus of batch type - A plasma processing apparatus of the batch type includes a tubular process container having a closed end and an open end opposite to each other, and a process field for accommodating target substrates, the process container including a tubular insulating body. The apparatus further includes a holder configured to hold the target substrates at intervals, a loading mechanism configured to load and unload the holder into and from the process container, and a lid member connected to the loading mechanism and configured to airtightly close the open end. A first electrode is disposed at the closed end of the process container, and a second electrode is disposed at the lid member, to constitute a pair of parallel-plate electrodes. An RF power supply is connected to one of the first and second electrodes and configured to apply an RF power for plasma generation. | 02-05-2009 |
20090078375 | Plasma Processing Apparatus And Method - A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween. | 03-26-2009 |
20090095423 | APPARATUS AND METHOD FOR PLASMA ETCHING - A plasma processing apparatus for performing plasma processing on an object to be processed, including: a processing chamber for performing plasma etching on an object to be processed; a first gas inlet provided at an upper portion of the processing chamber for supplying gas to a center portion in the processing chamber; a plurality of second gas inlets placed on an outer circumference of the first gas inlet for supplying gas to an outer circumference portion in the processing chamber; two lines of gas supply systems for supplying processing gases to the first gas inlet and the second gas inlets, respectively; an evacuation means for reducing the pressure in the processing chamber; an electrode on which the object to be processed is placed disposed in the processing chamber opposed to the first gas inlet and the second gas inlets; a high frequency power supply for generating plasma; and additional gas supply systems provided to the two lines of gas supply systems, respectively, for adding a gas for generating a depositional reaction product as additional gas via gas flow rate regulators at a given flow rate ratio. | 04-16-2009 |
20090159212 | JET PLASMA GUN AND PLASMA DEVICE USING THE SAME - A jet plasma gun and a plasma device using the same are provided. The jet plasma gun is for jetting plasma to process a surface of a substrate. The jet plasma gun includes a plasma producer, a plasma nozzle and a barrier. The plasma producer is for providing plasma. The plasma nozzle disposed between the substrate and plasma producer has a first opening and a second opening. The first opening faces plasma producer, and the second opening faces the substrate. The barrier being an insulator is disposed between the plasma nozzle and the substrate and has a through hole corresponding to the second opening. The plasma passes through the plasma nozzle and the through hole to reach the substrate. | 06-25-2009 |
20090173444 | SURFACE PROCESSING APPARATUS - The invention is to realize a gas ejection mechanism, which makes it possible to form a uniform gas flow and to control the temperature and its distribution over a gas plate, and thereby to provide a surface processing apparatus which can continuously carry out uniform processing. A surface processing apparatus of this invention comprises: a process chamber in which a substrate holding mechanism and a gas ejection mechanism are arranged to face each other; an exhaust means; and a gas supply means; wherein a gas distribution mechanism, a cooling or the heating mechanism provided with a coolant channel or a heater to cool or heat a gas plate and a number of gas passages, and the gas plate having a number of gas outlets communicated with the gas passages are arranged in that order from the upper stream to construct the gas ejection mechanism, and wherein the gas plate is fixed to the cooling or heating mechanism with a clamping member or with an electrostatic chucking mechanism. A second gas distribution mechanism may be installed between the gas plate and the cooling or heating mechanism so as to form gas outlets under the coolant channel. | 07-09-2009 |
20090183833 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion. | 07-23-2009 |
20090218043 | GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER - A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port. | 09-03-2009 |
20090260762 | Process gas introducing mechanism and plasma processing device - A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path. | 10-22-2009 |
20090283216 | METHOD OF AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A vertical single wall reaction tube type batch processing furnace can reduce the generation of particles. A method of removing native oxide film by fluoride gas can enhance the efficiency of utilization of gas. A method of exciting reaction gas by a catalyst at high temperature can be applied to a batch processing. A method of exciting reaction gas by a catalyst utilizes an oxidizing agent and gas other than an oxidizing agent. The flow rate of gas in the gas injection pipe and that of gas in the exhaust pipe are made to be substantially equal to each other. The gap between two adjacent wafers is made greater than the mean free path of gas. The oxidizing agent is dissociated by a catalyst of Ir, V or Kanthal while the gas other than the oxidizing agent is dissociated by a catalyst of W. | 11-19-2009 |
20090288773 | MULTIPLE-ELECTRODE PLASMA PROCESSING SYSTEMS WITH CONFINED PROCESS CHAMBERS AND INTERIOR-BUSSED ELECTRICAL CONNECTIONS WITH THE ELECTRODES - Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes. | 11-26-2009 |
20100006226 | Apparatus for generating hollow cathode plasma and apparatus for treating large area substrate using hollow cathode plasma - Provided are a method of generating hollow cathode plasma and a method of treating a large area substrate using the hollow cathode plasma. In the methods, the hollow cathode plasma is generated by a gas introduced between a hollow cathode in which a plurality of lower grooves where plasma is generated is defined in a bottom surface thereof and a baffle in which a plurality of injection holes is defined. A substrate disposed on a substrate support member is treated using the hollow cathode plasma passing through the injection holes. The uniform plasma having high density can be generated by hollow cathode effect due to the hollow cathode having the lower grooves and the injection holes of the baffle. Also, since the substrate can be treated using a hydrogen gas and a nitrogen gas in an ashing process, a damage of a low dielectric constant dielectric can be minimized. | 01-14-2010 |
20100043974 | PLASMA PROCESSING METHOD AND APPARATUS - A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate. | 02-25-2010 |
20100043975 | MOVABLE GAS INTRODUCTION STRUCTURE AND SUBSTRATE PROCESSING APPARATUS HAVING SAME - In a gas introduction structure that is reciprocatingly movable in a predetermined direction, a processing gas introduction system is configured to introduce a processing gas into a processing chamber in which a substrate is subjected to a predetermined processing under a clean atmosphere; and a processing gas supply line is configured to be connected to the processing gas introduction system and an external processing gas supply source to supply the processing gas from the processing gas supply source to the processing gas introduction system, mutual relative positions of the processing gas supply source and the processing gas introduction system being changed. The processing gas supply line includes: a first bendable portion connected to the processing gas supply source; a second bendable portion connected to the processing gas introduction system; and a non-bendable pipe interposed between the first bendable portion and the second bendable portion. | 02-25-2010 |
20100089533 | ASHING APPARATUS - Disclosed is an ashing apparatus wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate. | 04-15-2010 |
20100096084 | APPARATUS FOR SUPPORTING SUBSTRATE AND PLASMA ETCHING APPARATUS HAVING THE SAME - Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge. | 04-22-2010 |
20100101728 | PLASMA PROCESS APPARATUS - A disclosed a plasma process apparatus includes a process chamber that houses a substrate subjected to a predetermined plasma process and may be evacuated to a reduced pressure; a microwave generator that generates microwaves for generating plasma; a waveguide pipe that transmits the microwaves from the microwave generator to the process chamber; a waveguide pipe/coaxial pipe converter connected to one end of the waveguide pipe; and a coaxial pipe that forms a line through which the microwaves are transmitted from the waveguide pipe-coaxial pipe converter to the process chamber. An inner conductive body of the coaxial pipe has a hollow portion; and a first process gas supplying portion that supplies a process gas into the process chamber through the hollow portion of the inner conductive body of the coaxial pipe. | 04-29-2010 |
20100108263 | EXTENDED CHAMBER LINER FOR IMPROVED MEAN TIME BETWEEN CLEANINGS OF PROCESS CHAMBERS - Embodiments of liners for semiconductor process chambers are provided herein. In some embodiments, a liner for a semiconductor process chamber includes a first portion configured to line at least a portion of an inner volume of the semiconductor process chamber and a second portion configured to line at least a portion of a pump port of the semiconductor process chamber. In some embodiments, the first portion and the second portion are coupled together. In some embodiments, the first portion and the second portion of the liner may be fabricated a single piece. In some embodiments, the liner may be disposed in a process chamber having an inner volume and a pump port fluidly coupled to the inner volume. | 05-06-2010 |
20100163186 | Plasma Processing Apparatus - A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure. | 07-01-2010 |
20100170641 | PLASMA TREATMENT METHOD AND APPARATUS - A device for plasma treating a surface comprises a movable plasma generator and an actuator for moving the plasma generator. The actuator may be configured to move the plasma generator in a first direction along a path and then in a second direction along substantially the same path (e.g. the same path, an ovular path, etc.). For example, the actuator may be configured to reciprocate the plasma generator back and forth along the path. Movement of the plasma generator may be made along a track. To facilitate movement along the track, the plasma generator may include bearings that cooperate with the track. The plasma generator may be configured to move from a first position to a second position through an intermediate position. The plasma generator may then be configured to move back towards the first position by traveling through the intermediate, or substantially the intermediate, position. The plasma generator could take many forms, including a generator that includes an input for a working gas, an electrode, a counter electrode (which may be the body or nozzle of the generator), and/or a vortex generator. The plasma generator may be configured into two parts—a moving portion and a stationary portion. Such a generator may include brushes configured to maintain electrical contact and/or spaces through which a working gas can flow. | 07-08-2010 |
20100181024 | DIFFUSER SUPPORT - Embodiments of gas distribution apparatus comprise a diffuser support member coupled to a diffuser and movably disposed through a backing plate. Embodiments of methods of processing a substrate on a substrate receiving surface of a substrate support comprise providing a diffuser in which a diffuser support member supports the diffuser and is movably disposed through the backing plate. | 07-22-2010 |
20100224323 | PLASMA PROCESSING APPARATUS AND ELECTRODE FOR SAME - A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and second electrodes to supply high frequency power to the processing chamber. At least one of the first and second electrodes includes a base formed of a metal, a dielectric material provided at a central portion of a plasma side of the base, and a first resistor provided between the dielectric material and plasma, and formed of a metal with a predetermined pattern. | 09-09-2010 |
20100230050 | PLASMA GENERATING APPARATUS - Provided is a plasma generating apparatus. The apparatus includes a vacuum, an ElectroStatic Chuck (ESC), and an antenna unit. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a plurality of gas jet holes. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit covers and seals the gas jet holes with being spaced a predetermined distance apart from a surface of the vacuum plate, has a gas inlet communicating with the gas jet holes, and receives an external source RF. | 09-16-2010 |
20100243164 | REPLACEABLE UPPER CHAMBER SECTION OF PLASMA PROCESSING APPARATUS - A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at an upper end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is defined by a portion of the cylinder between the conical inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface. The thermal choke is defined by a thin metal section having a thickness of less than 0.25 inch and extending at least 25% of the length of the conical inner surface. | 09-30-2010 |
20100288439 | TOP PLATE AND PLASMA PROCESS APPARATUS EMPLOYING THE SAME - A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits. | 11-18-2010 |
20100294432 | Plasma Processing Apparatus - A plasma processing apparatus, a processing chamber having one surface formed by a flat-plate-like insulating-material manufactured window, a sample mounting electrode having a sample mounting plane formed on a surface opposed to the insulating-material manufactured window, a gas-inlet for a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, an inductively coupled antenna formed outside OF the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber, a radio-frequency power supply, and an LC circuit. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined as a longitudinal direction, the direction extending perpendicular to the sample mounting plane. | 11-25-2010 |
20100307685 | MICROWAVE PLASMA PROCESSING APPARATUS - In a microwave plasma processing apparatus, when a surface of a planar antenna | 12-09-2010 |
20100319853 | Gas supply device and apparatus for processing a substrate - A gas supply device may include a first gas supply member that may be disposed in a chamber and around a substrate loaded in the chamber. The first gas supply member may include nozzles for providing a gas onto the substrate. A second gas supply member that may provide the gas supplied from at least one gas supply line to the first gas supply member. | 12-23-2010 |
20110000618 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a creation space where radicals are created and a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas into the creation space, an upper plasma source configured to generate an electric field in the creation space to create the radicals from the first source gas, a second supply member configured to supply a second source gas into the process space, and a lower plasma source configured to generate an electric field in the process space. The upper plasma source includes a first segment and a second segment configured to wrap a side of the chamber. The first and second segments are alternately disposed in the vertical direction of the chamber. | 01-06-2011 |
20110000619 | ROTATIONAL ANTENNA AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis. | 01-06-2011 |
20110005680 | TUNABLE GAS FLOW EQUALIZER - A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt | 01-13-2011 |
20110005681 | Plasma Generating Units for Processing a Substrate - Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider. | 01-13-2011 |
20110024044 | ELECTRODE FOR USE IN PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS - An electrode for use in a plasma processing apparatus is provided above a lower electrode within a processing chamber so as to face the lower electrode serving as a mounting table configured to mount thereon a processing target substrate. The electrode includes an upper member provided with a plurality of gas passage holes through which a processing gas is supplied; and a lower member positioned below the upper member and provided with multiple sets of gas discharge holes through which the processing gas is discharged. Here, each gas passage hole may have a diameter larger than that of each gas discharge hole, each set of the gas discharge holes may communicate with corresponding one of the gas passage holes, and each set of the gas discharge holes may be arranged outside the rim of the corresponding one of the gas passage holes when viewed from a top thereof. | 02-03-2011 |
20110042008 | PLASMA GENERATOR - To provide a plasma generator having a plasma-generating zone of an increased volume. | 02-24-2011 |
20110056626 | REPLACEABLE UPPER CHAMBER PARTS OF PLASMA PROCESSING APPARATUS - An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection. | 03-10-2011 |
20110079356 | SIDE GAS INJECTOR FOR PLASMA REACTION CHAMBER - A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part. | 04-07-2011 |
20110114261 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base. | 05-19-2011 |
20110132542 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes an upper electrode that is installed within a processing chamber so as to face a lower electrode, supplies a gas through a plurality of gas supply holes provided in a facing surface and is vertically movable; a cover body installed above the upper electrode so as to airtightly seal a top opening of the processing chamber; a multiple number of gas exhaust holes provided in the facing surface; a ring-shaped member that is arranged along a circumference of the upper electrode, is vertically movable along with the upper electrode, and forms, at a lowered position, a processing space surrounded by the lower electrode, the upper electrode and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member. | 06-09-2011 |
20110139371 | PLASMA ETCHING CHAMBER - Disclosed is a plasma etching chamber including a gas distribution plate guiding a reaction gas to the edge of the wafer; a plate disposed to be spaced apart from the gas distribution plate; and bumper portions protruding on at least one of opposite surfaces of the gas distribution plate and the plate to allow the pressure of the reaction gas moving to the edge of the wafer to be uniform. | 06-16-2011 |
20110155322 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body. | 06-30-2011 |
20110162799 | PLASMA PROCESSING APPARATUS AND ELECTRODE USED THEREIN - A plasma processing apparatus includes a depressurizable processing chamber; an electrode provided in the processing chamber; and a high frequency power supply for supplying a high frequency power into the processing chamber to thereby generating a plasma. Further, the electrode includes a base formed of a dielectric material; a dielectric body buried in the base and formed of the same dielectric material as the base; and a conductive adhesive layer provided in a bonding portion between the base and the dielectric body, the conductive adhesive layer bonding together and fixing the base and the dielectric body to each other. | 07-07-2011 |
20110180213 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container. | 07-28-2011 |
20110186226 | GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS, AND METHOD OF MANUFACTURING THE GAS SUPPLY MEMBER - A gas supply member includes an annular portion in which a passage for a gas extending to have an annular shape is provided. The annular portion includes a first member having an annular shape and including a flat plate portion in which a plurality of gas supply holes through which a gas is supplied are formed, and a second member having an annular shape and forming a space, which becomes the passage for the gas, between the first member and the second member. | 08-04-2011 |
20110186227 | PLASMA CHAMBER FOR WAFER BEVEL EDGE PROCESSING - The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode. | 08-04-2011 |
20110192540 | TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS - An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled. | 08-11-2011 |
20110209829 | SURFACE TREATMENT APPARATUS - To stabilize a gas flow at an opening which is provided in a treatment housing for surface treatment, and through which an object is carried in or out. An object | 09-01-2011 |
20110214812 | GAS DISTRIBUTING MEANS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A substrate processing apparatus includes a process chamber having a chamber lid and a chamber body to provide a reaction space and a gas distributing means including a plate and an injection part in the process chamber. The injection part includes a plurality of through holes in the plate and a discharge portion capable of being in fluid communication with the plurality of through holes. The discharge portion has a matrix shape and provides a space where a plasma is discharged. The apparatus additionally includes a susceptor in the process chamber. The susceptor faces the gas distributing means. | 09-08-2011 |
20110214813 | PLASMA PROCESSING METHOD AND APPARATUS - A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate. | 09-08-2011 |
20110232845 | SUBSTRATE CLEANING CHAMBER AND COMPONENTS - A consumable ceramic liner can be used for connecting a gas outlet channel of a remote chamber to a gas inlet channel of a substrate cleaning chamber. The ceramic liner comprises an inlet cylinder having an outer diameter sized to fit in the gas outlet channel of the remote chamber, and an outlet cylinder connected to the gas inlet channel of the substrate cleaning chamber. A conical flare joins the inlet cylinder to the outlet cylinder. | 09-29-2011 |
20110272099 | PLASMA PROCESSING APPARATUS AND METHOD FOR THE PLASMA PROCESSING OF SUBSTRATES - A plasma processing apparatus ( | 11-10-2011 |
20110303362 | PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF - There is provided a plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table in a processing chamber by generating inductively coupled plasma within the processing chamber by applying a high frequency power to a high frequency antenna. The apparatus includes a multiple number of gas nozzles protruding from a sidewall of the processing chamber toward a center of the processing chamber in a space above the mounting table, and each gas nozzle has a gas discharge hole at a leading end of the gas nozzle in a protruding direction and a gas discharge hole at a sidewall of the gas nozzle. Further, the apparatus includes a rotation device configured to rotate each of the gas nozzles on each central axis of the gas nozzles and each central axis is extended in the protruding direction of each of the gas nozzles. | 12-15-2011 |
20110308733 | PLASMA PROCESSING APPARATUS AND GAS SUPPLY MEMBER SUPPORT DEVICE - There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount. | 12-22-2011 |
20110308734 | APPARATUS FOR LARGE AREA PLASMA PROCESSING - An apparatus for large area plasma processing according to the invention comprises at least one plane antenna (A) having a plurality of interconnected elementary resonant meshes (M | 12-22-2011 |
20120012253 | PLASMA SHIELD FOR ELECTRODE - Provided is a plasma shield for an electrode capable of preventing generation of particles by providing plasma shields at inner and outer diameter sides of an adhesive formed of elastomer for attaching a gas injection plate to an injection plate support member to protect the adhesive. | 01-19-2012 |
20120031560 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: an evacuable chamber | 02-09-2012 |
20120073752 | Adapter Ring For Silicon Electrode - Methods and systems are provided for retrofitting wafer etching systems. The methods and systems use an adapter ring to retrofit wafer etching systems designed for use with multiple piece electrodes such that single piece electrodes can be used in the etching systems. A portion of the adapter ring is disposed in a receptacle formed in a thermal coupled plate in the wafer etching system. Another portion of the adapter ring is positioned in a channel formed in an upper electrode. | 03-29-2012 |
20120073753 | ELECTRODE PLATE FOR PLASMA ETCHING AND PLASMA ETCHING APPARATUS - An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region. | 03-29-2012 |
20120111500 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring. | 05-10-2012 |
20120132366 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is disclosed, which includes: a cathode module comprising a plurality of first channels which generate plasma; an anode having a chamber which contains the cathode and having at least one plasma outlet corresponding to the first channels; an electrode connected to a high-frequency electrical power and the cathode; and a plurality of second channels penetrating through the anode; wherein each first channel and each second channel are disposed alternately. A first gas is introduced into the first channels ionized under high frequency electrical power. In the first channels, the free electrons collided brings high density of plasma. The generated plasma is expelled through the plasma outlet to form a plasma diffusion region. A second gas is introduced into the plasma diffusion region through the second channels to take part in the reaction of plasma. | 05-31-2012 |
20120132367 | PROCESSING APPARATUS - There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other. | 05-31-2012 |
20120138229 | PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus having a means for generating a plasma capable of correcting the eccentricity of the plasma diffused above the wafer caused by magnetic field or by vacuum eccentricity, comprising a vacuum processing chamber in which a sample is processed via plasma, a gas supply means for supplying gas into the vacuum processing chamber, a sample stage disposed within the vacuum processing chamber on which the sample is placed, an induction coil disposed outside the vacuum processing chamber, a radio frequency power supply for supplying radio frequency power to the induction coil, a Faraday shield being capacitively coupled with the plasma, and an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma. | 06-07-2012 |
20120145325 | PLASMA APPARATUS - A plasma apparatus including a chamber, an electrode set and a gas supplying tube set is provided. The chamber has a supporting table for supporting a substrate. The gas supplying tube set is disposed in the chamber and has a plurality of gas apertures. The gas supplying tube set is located between the supporting table and the electrode set. | 06-14-2012 |
20120160417 | Single axis gate valve for vacuum applications - A gate valve useful for pumping a high-vacuum processing chamber. The valve housing includes a first port for attachment to the vacuum chamber and a second port on the opposed wall and aligned with the first port for the external mounting of a pneumatic or other actuator having a shaft supporting on its end a valve gate plate within the housing. An expandable bellows sealed between the gate plate and the actuator surrounds shaft. The actuator can press the valve plate against a valve seat around the first port to close the valve or withdraw the plate to the opposed wall to provide high pumping conductance. A third port in the housing disposed from the valve is connected to the high-vacuum pump. The gate plate may be water cooled through channels in the shaft. An auxiliary vacuum pump, such as a cryo pump, may be placed inside the valve housing. | 06-28-2012 |
20120199288 | METHOD AND SYSTEM FOR INTRODUCTION OF AN ACTIVE MATERIAL TO A CHEMICAL PROCESS - A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process. | 08-09-2012 |
20120247672 | CEILING ELECTRODE PLATE AND SUBSTRATE PROCESSING APPARATUS - In a plasma processing apparatus, a ceiling electrode plate provided to face a substrate holding stage via a process space contacts and is supported by an electrode support by interposing a cooling plate, and a heat-transfer sheet is provided in a contact surface between the ceiling electrode plate and the cooling plate. The heat-transfer sheet has thermal conductivity of 0.5 to 2.0 W/m·K. The heat-transfer sheet is provided of a heat-resistant adhesive agent or a rubber including silicon, or the heat-transfer sheet is formed of a ceramic filler including oxide, nitride, or carbide. The ceramic filler of 25 to 60 volume % is contained in the heat-resistant adhesive agent or the rubber. A thickness of the heat-transfer sheet is in a range between 30 and 80 μm, and the heat-transfer sheet is not provided in a predetermined area around gas holes of the ceiling electrode plate. | 10-04-2012 |
20120247673 | ELECTRODE HAVING GAS DISCHARGE FUNCTION AND PLASMA PROCESSING APPARATUS - An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material. | 10-04-2012 |
20120247674 | PLASMA GENERATOR APPARATUS - Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil. | 10-04-2012 |
20120255678 | Multi-Frequency Hollow Cathode System for Substrate Plasma Processing - A hollow cathode system is provided for plasma generation in substrate plasma processing. The system includes a plurality of electrically conductive plates stacked in a layered manner. Dielectric sheets are disposed between each adjacently positioned pair of the plurality of electrically conductive plates. A number of holes are each formed to extend through the plurality of electrically conductive plates and dielectric sheets. The system also includes at least two independently controllable radiofrequency (RF) power sources electrically connected to one or more of the plurality of electrically conductive plates. The RF power sources are independently controllable with regard to frequency and amplitude. | 10-11-2012 |
20120267048 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector. | 10-25-2012 |
20120273134 | Bevel Edge Plasma Chamber With Top and Bottom Edge Electrodes - A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes. | 11-01-2012 |
20130000847 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus enabling uniform plasma processing over the entire surface of a sample, without causing abnormal discharge even when the electromagnetic field strength is strong as in the case of the inductive coupling method. The plasma processing apparatus includes a process chamber, a first dielectric vacuum window, an inductive coil, a radio-frequency power supply, a gas supply unit, and a sample holder. The gas supply unit includes a second dielectric gas guide plate and a third dielectric island member. The second dielectric gas guide plate is located near below the vacuum window, and has a gas inlet port in the center. The third dielectric island member is provided in a gap between the vacuum window and the gas guide plate. The dielectric constant of the third dielectric is higher than the dielectric constant of the first and second dielectrics. | 01-03-2013 |
20130014895 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode | 01-17-2013 |
20130048216 | CAPACITIVE CVD REACTOR AND METHODS FOR PLASMA CVD PROCESS - A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode. | 02-28-2013 |
20130068391 | SLIT VALVE APPARATUS, SYSTEMS, AND METHODS - Slit valve apparatuses are described. In one aspect, a slit valve apparatus is disclosed having a gate with at least one sealing surface, a blocker element, and a connector member that structurally connects the gate and the blocker element. Systems and methods including the slit valve apparatus are also disclosed, as are numerous other aspects. | 03-21-2013 |
20130087285 | PLASMA ETCHING APPARATUS - A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample. | 04-11-2013 |
20130139967 | MULTIPLE-ELECTRODE PLASMA PROCESSING SYSTEMS WITH CONFINED PROCESS CHAMBERS AND INTERIOR-BUSSED ELECTRICAL CONNECTIONS WITH THE ELECTRODES - Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes. | 06-06-2013 |
20130146225 | GAS INJECTOR APPARATUS FOR PLASMA APPLICATOR - A plasma chamber for use with a reactive gas source that includes a first conduit comprising a wall, an inlet, an outlet, an inner and outer surface, and a plurality of openings through the wall, the inlet receives a first gas for generating a reactive gas in the first conduit with a plasma formed in the first conduit. The plasma chamber also includes a second conduit that includes a wall, an inlet, and an inner surface. The first conduit is disposed in the second conduit defining a channel between the outer surface of the first conduit and the inner surface of the second conduit. A second gas provided to the inlet of the second conduit flows along the channel and through the plurality of openings of the wall of the first conduit into the first conduit to surround the reactive gas and plasma in the first conduit. | 06-13-2013 |
20130160948 | Plasma Processing Devices With Corrosion Resistant Components - In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum (Ta). | 06-27-2013 |
20130206338 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus comprises an upper electrode | 08-15-2013 |
20140014269 | PROCESSING APPARATUS - A processing apparatus includes a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed, a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an outer space, and a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the processing space from the outer space together with the first partitioning member. The second partitioning member is attached to the first partitioning member so that the second partitioning member is removable from the first partitioning member by moving the second partitioning member toward a space which a lower surface of the ceiling portion faces. | 01-16-2014 |
20140027060 | GAS DISTRIBUTION APPARATUS FOR SUBSTRATE PROCESSING SYSTEMS - In some embodiments, a gas distribution apparatus includes a first plate having a plurality of ports disposed through the first plate; a second plate disposed above and coupled to the first plate; a third plate disposed above and coupled to the second plate; a first plenum disposed between the first plate and the second plate and fluidly coupled to a first set of the plurality of ports, wherein the first plenum comprises a gas supply coupled to the first plenum to provide a process gas to an area proximate a substrate via a first set of the plurality of ports; a second plenum disposed between second plate and the third plate and fluidly coupled to the second set of ports, wherein the second plenum comprises a vacuum applied to the second plenum to remove reaction byproducts from the area proximate the substrate via a second set of the plurality ports. | 01-30-2014 |
20140034240 | APPARATUS FOR TREATING SUBSTRATE - Provided is a substrate treatment apparatus using plasma. The substrate treatment apparatus includes a housing having an inner space in which a substrate is treated, a support member disposed within the housing to support the substrate, a gas supply unit supplying a gas into the housing, a plasma source generating plasma from the gas supplied into the housing, and a baffle unit disposed to surround the support member within the housing, the baffle unit including a baffle in which through holes for exhausting the gas into the inner space of the housing are defined. The baffle is divided into a plurality of areas when viewed from an upper side, and each of portions of the plurality of areas is formed of a metallic material, and each of the other portions of the plurality of areas is formed of a nonmetallic material. | 02-06-2014 |
20140041805 | SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY APPARATUS - Provided is a substrate processing apparatus in which the concentration of processing gas is matched in a substrate surface at the time of initiating the ejection of the processing gas from a gas supply unit. The gas supply unit is provided with a gas ejecting surface facing the wafer disposed on a disposition unit. The gas supply unit is also provided with gas flow paths, and a flow path length and a flow path diameter of the diverged gas flow paths are set such that periods of time for gas flowing from a gas supply hole to a plurality of gas ejecting holes formed on the gas ejecting surface are matched with each other. Thus, the timings when the processing gas reaches the respective gas ejecting holes immediately after initiating the ejection of the processing gas are matched. | 02-13-2014 |
20140053983 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si. | 02-27-2014 |
20140083612 | BAFFLE AND METHOD FOR TREATING SURFACE OF THE BAFFLE, AND SUBSTRATE TREATING APPARATUS AND METHOD FOR TREATING SURFACE OF THE APPARATUS - Provided is a baffle. The baffle has holes for distributing a process gas excited in a plasma state. A surface of the baffle is treated by using a surface treating material containing an aromatic compound. | 03-27-2014 |
20140083613 | GAS SUPPLY DEVICE FOR A VACUUM PROCESSING CHAMBER, METHOD OF GAS SUPPLYING AND SWITCHING - The present disclosure provides a gas supply device used in vacuum processing chambers, which comprises: a first gas source and a second gas source; a first gas switch in which its input is connected to the first gas source and its output can be switchably connected to the gas inlets of two vacuum processing chambers or two processing stations in one vacuum processing chamber; a second gas switch, in which its input is connected to the second gas source and its output can be switchably connected to the gas inlets of the two vacuum processing chambers or the two processing stations; a control device for controlling the switching of the first gas switch and the second gas switch, so as to make the first gas source and the second gas source complementarily switch between two vacuum processing chambers or two processing stations in one vacuum processing chamber. The present disclosure achieves complementary switching of reactant gases in at least two vacuum processing chambers, which achieves full use of reactant gases, saving the cost and improving work efficiency. | 03-27-2014 |
20140083614 | SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY APPARATUS - The gas supply unit includes first gas flow paths having an upstream side communicated with a common first gas supply hole and diverged on the way to have a downstream side, and second gas flow paths having an upstream side communicated with a common second gas supply hole and diverged on the way to have a downstream side. A flow path length and a flow path diameter of each of the diverged first gas flow paths and the diverged second gas flow paths are set such that periods of time for gas flowing from the first gas supply hole to the respective first gas ejecting holes are matched with each other, and periods of time for gas flowing from the second gas supply hole to the respective second gas ejecting holes are matched with each other. | 03-27-2014 |
20140166206 | NON-PLASMA DRY ETCHING APPARATUS - A non-plasma dry etching apparatus is capable of forming textures uniformly only on one side of a silicon substrate. The non-plasma dry etching apparatus includes a stage on which a silicon substrate is placed is used as a base including plural layers. The plural layers include an electrostatic chuck layer, a heat-resistant glass layer and a space layer from the side on which the silicon substrate is placed. | 06-19-2014 |
20140283995 | GAS NOZZLE, PLASMA APPARATUS USING THE SAME, AND METHOD FOR MANUFACTURING GAS NOZZLE - [Object] To provide a gas nozzle which meets a requirement to suppress the fall of particles. | 09-25-2014 |
20140311675 | SINGLE WAFER ETCHING APPARATUS - Provided is a single wafer etching apparatus etching wafers one at a time. According to the present invention, the single wafer etching apparatus may not only discharge gas by vibrating the wafer even in the case that gas, a byproduct of an etching reaction, is generated, but may also prevent the gas from adsorbing on a surface of the wafer. Also, since the single wafer etching apparatus may directly heat each region of the wafer, the single wafer etching apparatus may uniformly maintain a reaction temperature by heating to higher temperatures from a circumferential direction toward the center of the wafer, even in the case that the temperature of an etching solution increases from the center of the wafer toward the circumferential direction due to the fact that etching is performed while the etching solution moves from the center of the wafer toward the circumferential direction. Therefore, the single wafer etching apparatus may not only uniformly maintain a degree of etching regardless of a position on the wafer, but may also increase flatness. | 10-23-2014 |
20140338835 | ELECTRON BEAM PLASMA SOURCE WITH REDUCED METAL CONTAMINATION - In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination. | 11-20-2014 |
20150020974 | BAFFLE AND APPARATUS FOR TREATING SURFACE OF BAFFLE, AND SUBSTRATE TREATING APPARATUS - The present invention relates to a substrate treating apparatus, and more particularly, to an apparatus treating a substrate using plasma. In an embodiment, a baffle is formed with holes distributing a process gas excited to a plasma state, and has a surface which is treated with a surface treating material comprising a silicon compound. | 01-22-2015 |
20150059979 | PLASMA PROCESSING APPARATUS FOR VAPOR PHASE ETCHING AND CLEANING - A plasma apparatus for vapor phase etching and cleaning, includes a reactor body configured to process a substrate; a direct plasma generation area in the reactor body, into which a process gas is introduced and in which plasma is directly induced to disassociate the process gas; a substrate processing area in the reactor body in which the substrate is processed by reactive species produced by reacting the disassociated process gas introduced from the direct plasma generation area with a vaporised gas introduced from the outside of the reactor body; a plasma induction assembly configured to induce plasma in the direct plasma generation area; and a gas distribution baffle, disposed between the direct plasma generation area and the substrate processing area, having a plurality of through holes through which the disassociated process gas is introduced from the direct plasma generation area to the substrate processing area. | 03-05-2015 |
20150068682 | POWER DEPOSITION CONTROL IN INDUCTIVELY COUPLED PLASMA (ICP) REACTORS - Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume. | 03-12-2015 |
20150075717 | INDUCTIVELY COUPLED SPATIALLY DISCRETE MULTI-LOOP RF-DRIVEN PLASMA SOURCE - An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to an array of radial toroidal channels in the ceiling. | 03-19-2015 |
20150075718 | PLASMA GENERATOR APPARATUS - Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil. | 03-19-2015 |
20150107772 | GAS SUPPLY DEVICE AND SUBSTRATE PROCESSING APPARATUS - A shower head | 04-23-2015 |
20150332893 | Surface Treatment Apparatus - The present invention provides a surface treatment apparatus which can treat a surface with high speed and high quality. A casing of a surface treatment apparatus is defined into two chambers, a plasma generation chamber provided with a plasma generation electrode and a substrate treatment chamber provided with a substrate support table. A plasma nozzle is formed on an anode electrode constituting a partition wall of the both chambers. A recess is formed on an upper cathode electrode. Further, the plasma nozzle is used as a hollow anode discharge generation area, and the recess as a hollow cathode discharge generation area. | 11-19-2015 |
20150340207 | DEVICE FOR PROVIDING A FLOW OF PLASMA - A device for forming at an ambient atmospheric pressure a gaseous plasma comprising active species for treatment of a treatment region. The device comprises a plasma cell for forming the gaseous plasma. The plasma cell comprises an inlet for receiving gas from a source and an outlet for discharging active species generated therein. A dielectric substrate preferably made of a polyimide encloses around a flow path for gas conveyed from the inlet to the outlet and an electrode is formed on the dielectric substrate for energising gas along the flow path to form active species. A protective lining is located on an inner surface of the dielectric substrate for resisting reaction of the active species with the material of the dielectric substrate. An earth electrode comprising an electrode formed on a dielectric substrate substantially surrounds and at least partially overlaps the plasma cell. | 11-26-2015 |
20150348762 | ELECTRODE PLATE FOR PLASMA ETCHING AND PLASMA ETCHING APPARATUS - An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region. | 12-03-2015 |
20150357162 | JIG AND PLASMA ETCHING APPARATUS INCLUDING THE SAME - A jig comprises a base constructed and arranged to be exposed to plasma for etching a native oxide layer on electronic devices. A pocket structure is on an upper surface of the base. The pocket structure includes pockets constructed and arranged to receive the electronic devices, The pocket structure has at least one passageway through which the plasma is moved in a horizontal direction between the pockets. | 12-10-2015 |
20150364350 | HEATING AND COOLING OF SUBSTRATE SUPPORT - A process chamber and a method for controlling the temperature of a substrate positioned on a substrate support assembly within the process chamber are provided. The substrate support assembly includes a thermally conductive body, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, and two or more cooling channels embedded within the thermally conductive body to be coplanar with the one or more heating elements. The cooling channels may be branched into two or more equal-length cooling passages being extended from a single point inlet and into a single point outlet to provide equal resistance cooling. | 12-17-2015 |
20150371826 | PLASMA REACTOR WITH HIGHLY SYMMETRICAL FOUR-FOLD GAS INJECTION - An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle. | 12-24-2015 |
20150380218 | MULTIPLE POINT GAS DELIVERY APPARATUS FOR ETCHING MATERIALS - Implementations of the present disclosure relate to an electrode assembly for a processing chamber. In one implementation, the electrode assembly includes a cathode electrode having an inner volume and a ground anode electrode spaced apart from the cathode electrode. A first etchant gas is introduced through the cathode electrode and into the inner volume. The first etchant gas is ionized within the inner volume. The ionized first etchant gas is filtered to allow only radicals to flow from the inner volume into a mixing volume formed within the ground anode electrode. The mixing volume is separated from the inner volume by a gas injection ring. The radicals from the first etchant gas are mixed and reacted with a second etchant gas in molecular phase, which is introduced through the ground anode electrode into a sidewall of the gas injection ring before entering the mixing volume in an evenly distributed manner. | 12-31-2015 |
20160005572 | CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT - Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates. | 01-07-2016 |
20160035541 | PLASMA PROCESSING APPARATUS AND GAS SUPPLY MEMBER - Disclosed is a plasma processing apparatus including: a processing container; a support member provided within the processing container and configured to support a processing target substrate; and a gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply holes. The first to third regions are disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate, and the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container. | 02-04-2016 |
20160042925 | BAFFLE AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME - Provided is a substrate treating apparatus including: a process chamber; a substrate support unit provided to support a substrate within the process chamber; a baffle positioned on the substrate support unit and formed with a plurality of injection holes; and a gas supply unit supplying a gas onto the baffle, wherein the baffle includes a slope region formed at an edge thereof and inclined such that the height of an upper surface thereof increases as it goes to an outer side surface. | 02-11-2016 |
20160064189 | PLASMA PROCESSING APPARATUS - A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded, a feeding port disposed on the film and through which gas is fed to a gap between the sample and the film, and openings of through-holes in which the pushup pins are housed, and the stage is connected to a feeding/evacuation conduit including a feeding-path that communicates with the port and through which gas fed to the gap flows, an evacuation-path that communicates with the opening and through which gas fed to the gap is discharged, and a connection-path through which the feeding-path and the evacuation-path communicate. With communication between the feeding-path and the evacuation-path via the connection-path interrupted, gas from the feeding-path is fed to the gap and into the through-hole via the gap. | 03-03-2016 |
20160064190 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided. | 03-03-2016 |
20160071700 | PLASMA PROCESSING APPARATUS AND CLEANING METHOD - Disclosed is a plasma processing apparatus that turns a processing gas into plasma so as to process a substrate. The plasma processing apparatus includes: a processing container configured to hermetically accommodate a substrate therein; a placement table installed on a bottom surface of the processing container, and configured to place the substrate thereon; a gas supply mechanism configured to supply at least one of a processing gas and a purge gas to an inside of the processing container through a gas supply pipe; a plasma generating mechanism configured to generate plasma of the processing gas within the processing container; an exhaust mechanism configured to exhaust the inside of the processing container through an exhaust pipe; and an ultrasonic vibration generating mechanism configured to apply ultrasonic vibration to a corner portion within the processing container. | 03-10-2016 |
20160111256 | PLASMA REACTOR WITH NON-POWER-ABSORBING DIELECTRIC GAS SHOWER PLATE ASSEMBLY - A gas distribution plate for a plasma reactor has a dielectric front plate and a dielectric back plate bonded together, with gas injection orifices extending through the front plate and gas supply channels in the surface of front plate facing the back plate. The back plate is joined to a heat reflective plate, or the back plate itself is formed of a heat reflective material, such as Beryllium Oxide. | 04-21-2016 |
20160126066 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole. | 05-05-2016 |
20160126096 | METHOD OF FORMING AN EPITAXIAL LAYER ON A SUBSTRATE, AND APPARATUS AND SYSTEM FOR PERFORMING THE SAME - In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution. | 05-05-2016 |
20160155616 | SUBSTRATE PROCESSING APPARATUS | 06-02-2016 |
20160168704 | GAS INJECTORS | 06-16-2016 |
20160189936 | HIGH CONDUCTANCE PROCESS KIT - Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield. | 06-30-2016 |
20160203952 | CERAMIC GAS DISTRIBUTION PLATE WITH EMBEDDED ELECTRODE | 07-14-2016 |
20170236693 | ROTATABLE SUBSTRATE SUPPORT HAVING RADIO FREQUENCY APPLICATOR | 08-17-2017 |
20190148111 | GROUNDING CAP MODULE, GAS INJECTION DEVICE AND ETCHING APPARATUS | 05-16-2019 |
20190148205 | ELECTROSTATIC CHUCKS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME | 05-16-2019 |
20220134362 | DETACHING AND INSTALLING DEVICE FOR GAS DISTRIBUTION PLATE OF ETCHING MACHINE, AND ETCHING MACHINE - The present application provides a detaching and installing device for a gas distribution plate of an etching machine, and the etching machine, and relates to the field of semiconductor manufacturing technologies, aiming at addressing the problems that it is quite difficult to detach and install the gas distribution plate of the etching machine and that the gas distribution plate is highly likely to be polluted. The detaching and installing device for the gas distribution plate of the etching machine includes a gripping member, a connecting member and a fixing member, the fixing member is detachably connected to the gas distribution plate of the etching machine, and the gripping member and the fixing member are connected through the connecting member; the gripping member is provided thereon with a gripping portion for grip by a user hand. | 05-05-2022 |