Class / Patent application number | Description | Number of patent applications / Date published |
156345260 | For detection or control of pressure or flow of etchant gas | 63 |
20080314521 | DEVICE WITH SELF ALIGNED GAPS FOR CAPACITANCE REDUCTION - A method for reducing capacitances between semiconductor device wirings is provided. A sacrificial layer is formed over a dielectric layer. A plurality of features are etched into the sacrificial layer and dielectric layer. The features are filled with a filler material. The sacrificial layer is removed, so that parts of the filler material remain exposed above a surface of the dielectric layer, where spaces are between the exposed parts of the filler material, where the spaces are in an area formerly occupied by the sacrificial layer. Widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. Gaps are etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed. | 12-25-2008 |
20090084501 | Processing system for producing a negative ion plasma - A processing system for producing a negative ion plasma is described, wherein a quiescent plasma having negatively-charged ions is produced. The processing system comprises a first chamber region for generating plasma using a first process gas, and a second chamber region separated from the first chamber region with a separation member. Electrons from plasma in the first region are transported to the second region to form quiescent plasma through collisions with a second process gas. A pressure control system coupled to the second chamber region is utilized to control the pressure in the second chamber region such that the electrons from the first chamber region undergo collision-quenching with the second process gas to form less energetic electrons that produce the quiescent plasma having negatively-charged ions. | 04-02-2009 |
20090223633 | Apparatus And Method For Plasma Etching - A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber | 09-10-2009 |
20100043973 | PLASMA PROCESSOR - The present invention relates to a plasma processor capable of regulating the temperature of the inner surface of the processing chamber efficiently and with excellent response, with a low-cost configuration. A plasma processor | 02-25-2010 |
20100078128 | SUBSTRATE PROCESSING APPARATUS - A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished. | 04-01-2010 |
20100132889 | ULTRA-HIGH ASPECT RATIO DIELECTRIC ETCH - A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. | 06-03-2010 |
20100154995 | SUBSTRATE PROCESSING APPARATUS, PROGRAM FOR PERFORMING OPERATION AND CONTROL METHOD THEREOF, AND COMPUTER READABLE STORAGE MEDIUM STORING THE PROGRAM - A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere. | 06-24-2010 |
20100163182 | PLASMA PROCESSING DEVICE - An object is to provide a plasma processing device capable of accurately judging whether or not the proper maintenance time has come which is necessary for maintaining an operation state of a device in the best condition. | 07-01-2010 |
20100170640 | DETERMINING HIGH FREQUENCY OPERATING PARAMETERS IN A PLASMA SYSTEM - Determining a high frequency operating parameter in a plasma system including a plasma power supply device coupled to a plasma load using a hybrid coupler having four ports is accomplished by: generating two high frequency source signals of identical frequency, the signals phase shifted by 90° with respect to one another; generating a high frequency output signal by combining the high frequency source signals in the hybrid coupler; transmitting the high frequency output signal to the plasma load; detecting two or more signals, each signal corresponding to a respective port of the hybrid coupler and related to an amplitude of a high frequency signal present at the respective port; and based on an evaluation of the two or more signals, determining the high frequency operating parameter. | 07-08-2010 |
20100175830 | LOW-K DAMAGE AVOIDANCE DURING BEVEL ETCH PROCESSING - A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO | 07-15-2010 |
20100294431 | EQUIPMENT FOR PRODUCING SEMICONDUCTORS, CORRESPONDING PUMPING DEVICE AND SUBSTRATE HOLDER - The invention relates to a piece of equipment for producing semiconductors, comprising a process chamber ( | 11-25-2010 |
20100319851 | PLASMA REACTOR WITH FEED FORWARD THERMAL CONTROL SYSTEM USING A THERMAL MODEL FOR ACCOMMODATING RF POWER CHANGES OR WAFER TEMPERATURE CHANGES - A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature. | 12-23-2010 |
20110067815 | PLASMA PROCESSING APPARATUS AND SHOWER HEAD - A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars. | 03-24-2011 |
20110073257 | UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF - An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement. | 03-31-2011 |
20110094681 | Device For Cleaning Objects - A device for cleaning objects includes, a device for drawing in surrounding air, a device for producing plasma and a device for blowing out a mixture of surrounding air and plasma into the object to be cleaned. The device is used preferably in household applications in the cleaning and sanitization of mattresses, joints and walls. | 04-28-2011 |
20110100553 | MULTI-PERIPHERAL RING ARRANGEMENT FOR PERFORMING PLASMA CONFINEMENT - An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume. | 05-05-2011 |
20110120648 | APPARATUS AND A METHOD FOR CONTROLLING THE DEPTH OF ETCHING DURING ALTERNATING PLASMA ETCHING OF SEMICONDUCTOR SUBSTRATES - The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising:
| 05-26-2011 |
20110162797 | METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING - A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask. | 07-07-2011 |
20110265951 | TWIN CHAMBER PROCESSING SYSTEM - Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source. | 11-03-2011 |
20110272098 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a discharge state detecting unit; a history information storing portion; a date-and-time data creating portion; an object specifying data output portion; a data recording portion; and a production history file creating portion. The data recording portion reads out date-and-time data, object specifying data, machine output data representing an operation state of a plasma processing execution portion, and judgment data representing a judgment result of the discharge state, and stores the data in the history information storing portion in time series, each time the plasma processing for the object to be processed is ended. The production history file creating portion that reads out the date-and-time data, the object specifying data, the machine output data, and the judgment result of the discharge state from the history information storing portion based on a designated period or date and time, and creates a production history file. | 11-10-2011 |
20120000607 | MASS FLOW CONTROL SYSTEM, PLASMA PROCESSING APPARATUS, AND FLOW CONTROL METHOD - A mass flow control system according to an embodiment includes a first mass flow controller that receives a corrosive gas having a corrosive effect on a predetermined material and has corrosion resistance to the corrosive gas, and a second mass flow controller that receives a non-corrosive gas having no corrosive effect on the predetermined material and is configured using the predetermined material. The mass flow control system further includes a plurality of first gas pipes that respectively supply a plurality of kinds of corrosive gases to the first mass flow controller, and a plurality of second gas pipes that respectively supply a plurality of kinds of non-corrosive gases to the second mass flow controller and are configured using the predetermined material. | 01-05-2012 |
20120006486 | METHOD AND APPARATUS FOR REMOVING PHOTORESIST - A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium. | 01-12-2012 |
20120006487 | System for In-Situ Mixing and Diluting Fluorine Gas - [Task] It is a task to provide a fluorine gas supply system which can stably supply fluorine gas generated by a fluorine gas generation device to a semiconductor processing device in a large quantity and in a precise concentration. | 01-12-2012 |
20120031559 | Dual Plasma Volume Processing Apparatus for Neutral/Ion Flux Control - A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume. | 02-09-2012 |
20120085495 | ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS - Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided. | 04-12-2012 |
20120160416 | ETCHING APPARATUS - When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion. | 06-28-2012 |
20120199287 | TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS - Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables. | 08-09-2012 |
20120227904 | CYLINDER CABINET AND SEMICONDUCTOR MANUFACTURING SYSTEM - According to one embodiment, a cylinder cabinet includes a controller performing control in such a way that when the amount of a residual gas in a first gas container becomes a predetermined amount or smaller, a gas supply pipe that supplies gas is switched from a first gas supply pipe to a second gas supply pipe. Moreover, the controller performs control in such a way that the residual gas in the first gas container is recovered into the recovery container during a period in which the gas is supplied from a second gas container. Furthermore, the controller performs control in such a way that when the first gas container is replaced with a new gas container, the inside of the first gas supply pipe is purged with the residual gas stored in the recovery container. | 09-13-2012 |
20120241088 | CYLINDER CABINET AND SEMICONDUCTOR MANUFACTURING SYSTEM - In a cylinder cabinet of an embodiment, when first pressure in a first gas supply pipe is equal to or less than a predetermined value, a pipe of gas supplied to an external apparatus is switched from the first gas supply pipe to a second gas supply pipe, and when a gas flow rate of gas flowing through the external apparatus is equal to or less than a predetermined value, if a residual gas amount of a first gas container connected to the first gas supply pipe is equal to or more than a predetermined value, the pipe is switched from the second gas supply pipe to the first gas supply pipe. | 09-27-2012 |
20120247668 | GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD - Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means. | 10-04-2012 |
20120291953 | GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD - A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second processing gas branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; a first and a second additional gas branch line; a flow path switching unit; and a control unit. Before processing the substrate to be processed, the control unit performs a pressure ratio control on the branch flow control unit while the processing gas supply unit supplies the processing gas. After the inner pressures of the first and the second processing gas branch line become stable, the control unit switches the pressure ratio control to a fixed pressure control, and then the additional gas supply unit supplies the additional gas. | 11-22-2012 |
20120305188 | PLASMA PROCESSING APPARATUS AND GAS SUPPLY METHOD THEREFOR - It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C | 12-06-2012 |
20120305189 | Method and Apparatus for Detecting Plasma Unconfinement - A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation. | 12-06-2012 |
20130025786 | SYSTEMS FOR AND METHODS OF CONTROLLING TIME-MULTIPLEXED DEEP REACTIVE-ION ETCHING PROCESSES - An improved gas delivery system and method delivers a sequence of pulses of prescribed amounts of at least two gases to a process chamber of a process tool in accordance with a predetermined recipe of steps of a gas delivery process. The system comprises: a plurality of channels, each including a control valve connected so as to control each pulse of gas flowing through the corresponding channel into the process chamber of the process tool; and an exhaust valve for controlling the pressure within the process chamber, the exhaust valve including a valve controller for controlling the operation of the gas delivery system including the control valves and the exhaust valve in accordance with the predetermined recipe of steps. In one embodiment, the exhaust valve controller is configured to operate in a hybrid feedback mode including both open feedback loop control wherein the exhaust valve is set at a preselected position based on a past learned position for each step of the gas delivery process, and closed feedback loop control of the system for each step of the gas delivery process as a function of the pressure within the process chamber following the open loop control. | 01-31-2013 |
20130087283 | Systems For Cooling RF Heated Chamber Components - In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H | 04-11-2013 |
20130087284 | ORGANIC LINE WIDTH ROUGHNESS WITH H2 PLASMA TREATMENT - An apparatus for reducing very low frequency line width roughness (LWR) is provided. A plasma processing chamber is provided, comprising a chamber wall, a substrate support, a pressure regulator, at least one antenna, a gas inlet, and a gas outlet. A gas source comprises an etchant gas source and a H | 04-11-2013 |
20130092322 | GAS SUPPLY UNIT, SUBSTRATE PROCESSING APPARATUS AND SUPPLY GAS SETTING METHOD - A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges. | 04-18-2013 |
20130118688 | ETCHING APPARATUS - When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion. | 05-16-2013 |
20130126093 | GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GASSUPPLY METHOD - Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means. | 05-23-2013 |
20130153147 | DECHUCK CONTROL METHOD AND PLASMA PROCESSING APPARATUS - A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck. | 06-20-2013 |
20130255883 | METHODS AND APPARATUS FOR SUPPLYING PROCESS GAS IN A PLASMA PROCESSING SYSTEM - Methods and apparatus for supplying gas in a plasma processing system that employs the single line drop approach wherein a regulator is shared among multiple mass flow controllers. In one or more embodiments, an accumulator is provided and coupled in gaseous communication with a shared manifold to reduce pressure spikes and dips. A filter, which may be replaceable or non-replaceable separate from the accumulator, is integrated with the accumulator in one or more embodiments. | 10-03-2013 |
20130284369 | TWO-PHASE OPERATION OF PLASMA CHAMBER BY PHASE LOCKED LOOP - Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing RF electrodes, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop. | 10-31-2013 |
20130299089 | LOW-K DAMAGE AVOIDANCE DURING BEVEL ETCH PROCESSING - An apparatus for etching a bevel edge of a substrate includes a bevel etch chamber and a controller including non-transitory computer readable media. The computer readable media includes computer readable code for providing a cleaning gas comprising at least one of a CO | 11-14-2013 |
20130333841 | PLASMA GENERATOR AND CLEANING/PURIFICATION APPARATUS USING SAME - A plasma generator ( | 12-19-2013 |
20140000809 | GAS PRESSURE CONTROL VALVE | 01-02-2014 |
20140041804 | PLASMA PROCESSING APPARATUS AND DIAGNOSIS METHOD THEREOF - A plasma processing apparatus includes at least three gas supply lines connected to a process chamber in parallel to allow a gas to flow therethrough, and at least three flow-rate controllers provided on the gas supply lines to detect the flow rate of the gas flowing through each of the flow-rate controllers to control the flow rate to a set value and a diagnosis method. The apparatus has a function of splitting and supplying a gas controlled to a predetermined flow rate by the third flow-rate controller, to a first flow-rate controller for the smallest detectable range of the three flow-rate controllers and to a second flow-rate controller, in order to test the operation of the control of the flow rate of the first flow-rate controller, based on the value obtained from the flow rate of the gas flowing through the second flow-rate controller and the predetermined flow rate. | 02-13-2014 |
20140116621 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor | 05-01-2014 |
20140290860 | PLASMA PROCESS APPARATUS - A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion. | 10-02-2014 |
20150020971 | MIXED MODE PULSING ETCHING IN PLASMA PROCESSING SYSTEMS - A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times. | 01-22-2015 |
20150053346 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed. | 02-26-2015 |
20150294884 | SUBSTRATE PROCESSING APPARATUS AND CONTROL DEVICE FOR SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus including: a substrate processing unit configured to accommodate a substrate in a processing chamber, and process the substrate; and a control unit including a storage unit, a main storage unit, and a user interface unit. The control unit includes: recipe optimizing means configured to calculate a difference between measurement data obtained by measuring a processing result of the substrate and a target value, and optimize a recipe by changing some of processing conditions of the recipe so that the difference becomes smaller, and recipe batch-optimizing means configured to retrieve a batch-optimizable recipe in the storage unit in connection with the recipe and change some of processing conditions on the retrieved recipe like the recipe, on which the optimization is being performed. | 10-15-2015 |
20150325414 | UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF - An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement. | 11-12-2015 |
20150332896 | VACUUM APPARATUS - An embodiment of the present disclosure provides a vacuum apparatus, which relates to a display technical field. The vacuum apparatus can eliminate an electrostatic adsorption between a substrate and an electrode so as to avoid damages to the substrate. The vacuum apparatus includes: a vacuum cavity; a first electrode and a second electrode located inside the vacuum cavity and opposite to each other; and positioning structures for positioning the substrate. The substrate is located between the first electrode and the second electrode and is positioned closer to the first electrode or the second electrode. The vacuum apparatus further includes an electrostatic elimination device. The electrostatic elimination device can eliminate the electrostatic adsorption between the substrate and the first electrode and/or between the substrate and the second electrode by attracting charged particles to the surface of the substrate closer to a side of the first electrode and/or the surface of the substrate closer to a side of the second electrode. The present disclosure also relates to manufacture method of the vacuum apparatus. | 11-19-2015 |
20150348763 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power. | 12-03-2015 |
20150364349 | DUAL CHAMBER PLASMA ETCHER WITH ION ACCELERATOR - The embodiments herein generally deal with semiconductor processing methods and apparatus. More specifically, the embodiments relate to methods and apparatus for etching a semiconductor substrate. A partially fabricated semiconductor substrate is provided in a reaction chamber. The reaction chamber is divided into an upper sub-chamber and a lower sub-chamber by a grid assembly. Plasma is generated in the upper sub-chamber, and the substrate is positioned in the lower sub-chamber. The grid assembly includes at least two grids, each of which is negatively biased, and each of which includes perforations which allow certain species to pass through. The uppermost grid is negatively biased in order to repel electrons. The lowermost grid is biased further negative (compared to the uppermost grid) in order to accelerate positive ions from the upper to the lower sub-chamber. Etching gas is supplied directly to the lower sub-chamber. The etching gas and ions react with the surface of the substrate to etch the substrate as desired. | 12-17-2015 |
20160042916 | POST-CHAMBER ABATEMENT USING UPSTREAM PLASMA SOURCES - Embodiments of the disclosure relate to a remote plasma source for cleaning an exhaust pipe. In one embodiment, an apparatus includes a substrate processing chamber, a pump positioned to evacuate the substrate processing chamber, and an abatement system. The abatement system comprises a plasma gas delivery system positioned between the substrate processing chamber and the pump, the gas delivery system having a first end coupling to the substrate processing chamber and a second end coupling to the pump, a reactor body connected to the gas delivery system through a delivery member, a cleaning gas source connected to the reactor body, and a power source positioned to ionize within the reactor body a cleaning gas from the cleaning gas source. Radicals and species of the cleaning gas react with post-process gases from the substrate processing chamber to convert them into a environmentally and process equipment friendly composition before entering the pump. | 02-11-2016 |
20160042917 | PLASMA REACTOR HAVING AN ARRAY OF PLURAL INDIVIDUALLY CONTROLLED GAS INJECTORS ARRANGED ALONG A CIRCULAR SIDE WALL - A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled. | 02-11-2016 |
20160049281 | DIFFERENTIALLY PUMPED REACTIVE GAS INJECTOR - One process that may be used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. The low pressure is achieved by confining the high pressure reactant delivery to a small area and vacuuming away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed techniques may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. | 02-18-2016 |
20160181071 | GAS SUPPLY SYSTEM | 06-23-2016 |
20160196991 | CIRCULATION COOLING AND HEATING DEVICE | 07-07-2016 |
20160254171 | IMAGE REVERSAL WITH AHM GAP FILL FOR MULTIPLE PATTERNING | 09-01-2016 |
20160379848 | Substrate Processing Apparatus - A substrate processing apparatus includes: a processing chamber for processing a substrate; a substrate holding part whereon the substrate is placed; an elevating mechanism to move the substrate holding part vertically; a first gas supply system to supply a halogen-containing process gas to the substrate; a second gas supply system to supply an inert gas to the substrate; an exhaust unit to exhaust the process and inert gases; and a controller to control the elevating mechanism and the gas supply systems to: supply the process gas with a state where heights of the substrate holding part and exhaust unit are adjusted; and supply the inert gas to a center portion of the substrate from thereabove such that the inert gas flows radially from the center portion to a circumference of the substrate along a surface of the substrate and is exhausted out of the processing chamber through the exhaust unit. | 12-29-2016 |
20190148118 | Multi-Zone Cooling Of Plasma Heated Window | 05-16-2019 |